SP720ABT [LITTELFUSE]

TVS Diode Arrays - Elctronic Protection Array for ESD and Overvoltage Protection; 瞬态抑制二极管阵列 - 插卡电脑保护阵列的ESD和过电压保护
SP720ABT
型号: SP720ABT
厂家: LITTELFUSE    LITTELFUSE
描述:

TVS Diode Arrays - Elctronic Protection Array for ESD and Overvoltage Protection
瞬态抑制二极管阵列 - 插卡电脑保护阵列的ESD和过电压保护

触发装置 硅浪涌保护器 瞬态抑制二极管 电视 光电二极管 电脑
文件: 总6页 (文件大小:103K)
中文:  中文翻译
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TVS Diode Arrays  
Electronic Protection Array for ESD and Overvoltage Protection  
SP720  
The SP720 is an array of SCR/Diode bipolar structures for ESD and  
over-voltage protection to sensitive input circuits. The SP720 has 2  
protection SCR/Diode device structures per input. A total of 14 available  
inputs can be used to protect up to 14 external signal or bus lines.  
Over-voltage protection is from the IN (pins 1-7 and 9-15) to V+ or V-.  
The SCR structures are designed for fast triggering at a threshold of one  
+V  
diode threshold above V+ (Pin 16) or a -V  
diode threshold  
BE  
BE  
below V- (Pin 8). From an IN input, a clamp to V+ is activated if a tran-  
sient pulse causes the input to be increased to a voltage level greater  
than one V  
pulse, one V  
BE  
Human Body Model (HBM) Capability is:  
above V+. A similar clamp to V- is activated if a negative  
less than V-, is applied to an IN input. Standard ESD  
BE  
HBMSTANDARD  
MODE  
R
C
ESD (V)  
>15kV  
>4kV  
Features  
IEC 61000-4-2  
Air  
Direct  
330150pF  
330150pF  
• ESD Interface Capability for HBM Standards  
- MIL STD 3015.7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15kV  
- IEC 61000-4-2, Direct Discharge,  
Direct, Dual Pins 330150pF  
MIL-STD-3015.7 Direct, In-circuit 1.5k100pF  
>8kV  
Single Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV (Level 2)  
Two Inputs in Parallel . . . . . . . . . . . . . . . . . . . . . . . . 8kV (Level 4)  
- IEC 61000-4-2, Air Discharge. . . . . . . . . . . . . . . . . 15kV (Level 4)  
>15kV  
Refer to Figure 1 and Table 1 for further detail. Refer to Application Note  
AN9304 and AN9612 for additional information.  
• High Peak Current Capability  
- IEC 61000-4-5 (8/20µs). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3A  
- Single Pulse, 100µs Pulse Width. . . . . . . . . . . . . . . . . . . . . . . ±2A  
- Single Pulse, 4µs Pulse Width. . . . . . . . . . . . . . . . . . . . . . . . . ±5A  
Ordering Information  
• Designed to Provide Over-Voltage Protection  
TEMP. RANGE  
PKG.  
NO.  
Min.  
Order  
- Single-Ended Voltage Range to . . . . . . . . . . . . . . . . . . . . . . +30V  
- Differential Voltage Range to. . . . . . . . . . . . . . . . . . . . . . . . . ±15V  
o
PART NO.  
SP720AP  
SP720AB  
SP720ABT  
( C)  
PACKAGE  
16 Ld PDIP  
-40 to 105  
-40 to 105  
-40 to 105  
E16.3  
1500  
1970  
2500  
• Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2ns Risetime  
• Low Input Leakages . . . . . . . . . . . . . . . . . . . . . . . . . 1nA at 25oC (Typ)  
• Low Input Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3pF (Typ)  
• An Array of 14 SCR/Diode Pairs  
16 Ld SOIC  
M16.15  
M16.15  
16 Ld SOIC  
Tape and Reel  
• Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40oC to 105oC  
Pinout  
Applications  
• Microprocessor/Logic Input Protection  
SP720 (PDIP, SOIC)  
TOP VIEW  
• Data Bus Protection  
• Analog Device Input Protection  
• Voltage Clamp  
IN  
1
2
3
4
5
6
7
8
16 V+  
IN  
IN  
IN  
IN  
IN  
IN  
V-  
15 IN  
14 IN  
13 IN  
12 IN  
11 IN  
10 IN  
Functional Block Diagram  
V+  
16  
3 - 7  
9 - 15  
9
IN  
IN  
2
1
IN  
IN  
V-  
8
228  
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TVS Diode Arrays  
Electronic Protection Array for ESD and Overvoltage Protection  
SP720  
Absolute Maximum Ratings  
Thermal Information  
Continuous Supply Voltage, (V+) - (V-). . . . . . . . . . . . . . . . . . . . . . . . . +35V  
Forward Peak Current, I to V , I to GND  
(Refer to Figure 6) . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2A, 100µs  
ESD Ratings and Capability (Figure 1, Table 1)  
Thermal Resistance (Typical, Note 1). . . . . . . . . . . . . . . . . . . . . θ (oC/W)  
JA  
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90  
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130  
Maximum Storage Temperature Range . . . .. . . . . . . . . . . . . . . -65oC to 150oC  
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . . . . . . . . . . . 150oC  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . .. . . . . . .. . . . . . . . . .300oC  
(SOIC Lead Tips Only)  
IN  
CC IN  
Load Dump and Reverse Battery (Note 2)  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device  
at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. θ is measured with the component mounted on an evaluation PC board in free air.  
JA  
Electrical Specifications  
T
= -40oC to 105oC; V = 0.5V  
IN  
, Unless Otherwise Specified  
CC  
A
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Operating Voltage Range,  
V
-
2 to 30  
-
V
SUPPLY  
V
= [(V+) - (V-)]  
SUPPLY  
Forward Voltage Drop:  
IN to V-  
IN to V+  
I
= 1A (Peak Pulse)  
IN  
V
-
-
2
2
-
-
V
V
FWDL  
V
FWDH  
Input Leakage Current  
Quiescent Supply Current  
Equivalent SCR ON Threshold  
Equivalent SCR ON Resistance  
Input Capacitance  
I
-20  
5
50  
1.1  
1
20  
nA  
nA  
V
IN  
QUIESCENT  
5
I
-
-
-
-
-
200  
Note 3  
/I ; Note 3  
-
-
-
-
V
FWD FWD  
C
3
pF  
ns  
IN  
Input Switching Speed  
NOTES:  
t
2
ON  
2. In automotive and battery operated systems, the power supply lines should be externally protected for load dump and reverse battery. When the  
V+ and V- pins are connected to the same supply voltage source as the device or control line under protection, a current limiting resistor should  
be connected in series between the external supply and the SP720 supply pins to limit reverse battery current to within the rated maximum  
limits. Bypass capacitors of typically 0.01µF or larger from the V+ and V- pins to ground are recommended.  
3. Refer to the Figure 3 graph for definitions of equivalent “SCR ON Threshold” and “SCR ON Resistance.These characteristics are given here  
for thumb-rule information to determine peak current and dissipation under EOS conditions.  
TABLE 1. ESD TEST CONDITIONS  
ESD Capability  
ESD capability is dependent on the application and defined test  
standard. The evaluation results for various test standards and methods  
based on Figure 1 are shown in Table 1.  
STANDARD  
TYPE/MODE  
R
C
±V  
D
D
D
MIL STD 3015.7 Modified HBM  
Standard HBM  
1.5k100pF 15kV  
1.5k100pF 6kV  
For the “Modified” MIL-STD-3015.7 condition that is defined as an  
“in-circuit” method of ESD testing, the V+ and V- pins have a return path  
to ground and the SP720 ESD capability is typically greater than 15kV  
from 100pF through 1.5k. By strict definition of MIL-STD-3015.7 using  
“pin-to-pin” device testing, the ESD voltage capability is greater than 6kV.  
The MIL-STD-3015.7 results were determined from AT&T ESD Test  
Lab measurements.  
IEC 61000-4-2  
HBM, Air Discharge  
330150pF 15kV  
HBM, Direct Discharge 330150pF 4kV  
HBM, Direct Discharge, 330150pF 8kV  
Two Parallel Input Pins  
EIAJ IC121  
Machine Model  
0k200pF 1kV  
R
D
R
1
The HBM capability to the IEC 61000-4-2 standard is greater than 15kV  
for air discharge (Level 4) and greater than 4kV for direct discharge  
(Level 2). Dual pin capability (2 adjacent pins in parallel) is well in excess  
of 8kV (Level 4).  
CHARGE  
SWITCH  
DISCHARGE  
SWITCH  
C
D
IN  
H.V.  
SUPPLY  
°±V  
For ESD testing of the SP720 to EIAJ IC121 Machine Model (MM) standard,  
the results are typically better than 1kV from 200pF with no series resistance.  
DUT  
D
IEC 1000-4-2: R 50 to 100M  
1
MIL STD 3015.7:R 1 to 10MΩ  
1
FIGURE 1. ELECTROSTATIC DISCHARGETEST  
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TVS Diode Arrays  
Electronic Protection Array for ESD and Overvoltage Protection  
SP720  
100  
80  
60  
40  
20  
0
2.5  
2
o
o
T
= 25 C  
T
= 25 C  
A
A
SINGLE PULSE  
SINGLE PULSE  
1.5  
1
I
FWD  
EQUIV. SAT. ON  
THRESHOLD ~ 1.1V  
V
FWD  
0.5  
0
600  
800  
1000  
1200  
0
1
2
3
FORWARD SCRVOLTAGE DROP (mV)  
FORWARD SCRVOLTAGE DROP (V)  
FIGURE 2. LOW CURRENT SCR FORWARDVOLTAGE DROP  
CURVE  
FIGURE 3. HIGH CURRENT SCR FORWARDVOLTAGE DROP  
CURVE  
+V  
CC  
+V  
CC  
INPUT  
DRIVERS  
LINEAR OR  
DIGITAL IC  
INTERFACE  
OR  
SIGNAL  
SOURCES  
TO +V  
V+  
IN 1-7  
IN 9-15  
CC  
SP720  
V-  
SP720 INPUT  
PROTECTION CIRCUIT  
(1 OF 14 ON CHIP)  
FIGURE 4. TYPICALAPPLICATION OFTHE SP720 AS AN INPUT CLAMPFOR OVER-VOLTAGE, GREATERTHAN 1V ABOVE V+ OR  
BE  
LESSTHAN -1V  
BELOW V-  
BE  
230  
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TVS Diode Arrays  
Electronic Protection Array for ESD and Overvoltage Protection  
SP720  
The overstress curve is shown in Figure 6 for a 15V supply condition. The  
Peak Transient Current Capability of the SP720  
dual pins are capable of 10A peak current for a 10µs pulse and 4A peak  
current for a 1ms pulse. The complete for single pulse peak current vs.  
pulse width time ranging up to 1 second are shown in Figure 6.  
The peak transient current capability rises sharply as the width of the  
current pulse narrows. Destructive testing was done to fully evaluate the  
SP720’s ability to withstand a wide range of transient current pulses. The  
circuit used to generate current pulses is shown in Figure 5.  
VARIABLETIME DURATION  
CURRENT PULSE GENERATOR  
+
R
The test circuit of Figure 5 is shown with a positive pulse input. For a  
negative pulse input, the (-) current pulse input goes to an SP720 ‘IN’  
input pin and the (+) current pulse input goes to the SP720 V- pin. The  
V+ to V- supply of the SP720 must be allowed to float. (i.e., It is not tied  
to the ground reference of the current pulse generator.) Figure 6 shows  
the point of overstress as defined by increased leakage in excess of the  
data sheet published limits.  
1
V
G
CURRENT  
-
SENSE  
(-)  
(+)  
1
2
3
4
5
6
7
8
IN  
IN  
IN  
IN  
V+ 16  
IN 15  
IN 14  
IN 13  
IN 12  
IN 11  
IN 10  
The maximum peak input current capability is dependent on the V+ to V-  
voltage supply level, improving as the supply voltage is reduced. Values  
of 0, 5, 15 and 30 voltages are shown. The safe operating range of the  
transient peak current should be limited to no more than 75% of the  
measured overstress level for any given pulse width as shown in Figure 6.  
+
C1  
-
SP720  
VOLTAGE  
PROBE  
IN  
IN  
IN  
V-  
When adjacent input pins are paralleled, the sustained peak current  
capability is increased to nearly twice that of a single pin. For compari-  
son, tests were run using dual pin combinations 1+2, 3+4, 5+6, 7+9,  
10+11, 12+13 and 14+15.  
IN  
9
R ~ 10TYPICAL  
1
G
V
ADJ. 10V/ATYPICAL  
C1 ~ 100µF  
5
FIGURE 5. TYPICALSP720 PEAKCURRENTTEST CIRCUIT  
WITH AVARIABLEPULSEWIDTH INPUT  
10  
9
8
7
6
5
4
3
2
1
0
CAUTION: SAFE OPERATING CONDITIONS LIMIT  
THE MAXIMUM PEAK CURRENT FOR A GIVEN  
PULSEWIDTH TO BE NO GREATER THAN 75%  
OF THE VALUES SHOWN ON EACH CURVE.  
SINGLE PIN STRESS CURVES  
DUAL PIN STRESS CURVE  
0V  
5V  
15V  
15V  
30V  
V+ TO V- SUPPLY  
10  
0.001  
0.01  
0.1  
1
100  
1000  
PULSEWIDTH TIME (ms)  
FIGURE 6. SP720TYPICALSINGLE PULSE PEAKCURRENT CURVES SHOWINGTHE MEASURED POINT OF OVER-STRESS IN  
o
AMPERES vsPULSETIME IN MILLISECONDS (T = 25 C)  
A
231  
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TVS Diode Arrays  
Electronic Protection Array for ESD and Overvoltage Protection  
SP720  
Dual-In-Line Plastic Packages (PDIP)  
E16.3 (JEDEC MS-001 BB ISSUE D)  
16 LEAD DUAL-IN-LINE PLASTIC PACKAGE  
N
E1  
INCHES  
MILLIMETERS  
INDEX  
1
2
3
N/2  
AREA  
SYMBOL  
MIN  
MAX  
0.210  
-
MIN  
-
MAX  
5.33  
-
NOTES  
-B-  
-C-  
A
A1  
A2  
B
-
4
-A-  
0.015  
0.115  
0.014  
0.045  
0.008  
0.735  
0.005  
0.300  
0.240  
0.39  
2.93  
0.356  
1.15  
0.204  
18.66  
0.13  
7.62  
6.10  
4
D
E
BASE  
PLANE  
0.195  
0.022  
0.070  
0.014  
0.775  
-
4.95  
0.558  
1.77  
0.355  
19.68  
-
-
A2  
A
-
SEATING  
PLANE  
L
C
L
B1  
C
8, 10  
D1  
B1  
eA  
A1  
A
-
D1  
e
eC  
B S  
C
D
5
5
6
5
-
B
eB  
0.010 (0.25) M  
C
D1  
E
NOTES:  
0.325  
0.280  
8.25  
7.11  
1. Controlling Dimensions: INCH. In case of conflict between English and  
Metric dimensions, the inch dimensions control.  
E1  
e
0.100 BSC  
0.300 BSC  
2.54 BSC  
7.62 BSC  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication No. 95.  
e
e
6
7
4
9
A
B
-
0.430  
0.150  
-
10.92  
3.81  
4. Dimensions A, A1 and L are measured with the package seated in JE-  
DEC seating plane gauge GS-3.  
L
0.115  
2.93  
5. D, D1, and E1 dimensions do not include mold flash or protrusions.  
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).  
N
16  
16  
e
6. E and  
are measured with the leads constrained to be perpendic-  
A
-C-  
ular to datum  
.
7. e and e are measured at the lead tips with the leads unconstrained.  
B
C
e
must be zero or greater.  
C
8. B1 maximum dimensions do not include dambar protrusions. Dambar  
protrusions shall not exceed 0.010 inch (0.25mm).  
9. N is the maximum number of terminal positions.  
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,  
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).  
232  
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TVS Diode Arrays  
Electronic Protection Array for ESD and Overvoltage Protection  
SP720  
Small Outline Plastic Packages (SOIC)  
M16.15 (JEDEC MS-012-AC ISSUE C)  
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE  
INCHES MILLIMETERS  
N
INDEX  
AREA  
0.25(0.010)  
M
B M  
H
E
SYMBOL  
MIN  
MAX  
0.0688  
0.0098  
0.020  
MIN  
1.35  
0.10  
0.33  
0.19  
9.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
10.00  
4.00  
NOTES  
-B-  
A
A1  
B
C
D
E
e
0.0532  
0.0040  
0.013  
-
-
1
2
3
L
9
-
SEATING PLANE  
A
0.0075  
0.3859  
0.1497  
0.0098  
0.3937  
0.1574  
-A-  
3
4
-
o
h x 45  
D
-C-  
0.050 BSC  
1.27 BSC  
µ
H
h
0.2284  
0.0099  
0.016  
0.2440  
0.0196  
0.050  
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
-
e
A1  
C
5
6
7
-
B
0.10(0.004)  
L
0.25(0.010) M  
C
A M B S  
N
µ
16  
16  
NOTES:  
o
o
o
o
0
8
0
8
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication Number 95.  
5
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006  
inch) per side.  
4. Dimension “E” does not include interlead flash or protrusions. Interlead  
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “Lis the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above  
the seating plane, shall not exceed a maximum value of 0.61mm  
(0.024 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimensions are  
not necessarily exact.  
233  
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