SPHV36-01ETG-C [LITTELFUSE]
Trans Voltage Suppressor Diode, 200W, 36V V(RWM), Bidirectional, 1 Element, Silicon, MO-236, GREEN, PLASTIC PACKAGE-2;
| 型号： | SPHV36-01ETG-C |
| 厂家： | 
LITTELFUSE |
| 描述： | Trans Voltage Suppressor Diode, 200W, 36V V(RWM), Bidirectional, 1 Element, Silicon, MO-236, GREEN, PLASTIC PACKAGE-2 局域网 二极管 |
| 文件： | 总6页 (文件大小：992K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV-C Series
RoHS
GREEN
Pb
SPHV-C Series 200W Discrete Bidirectional TVS Diode
Description
The Bidirectional SPHV-C series is designed for use in
portable applications, LED lighting modules, automotive
applications, and low speed I/Os. It will protect sensitive
equipment from damage due to electrostatic discharge
(ESD) and other overvoltage transients.
The SPHV-C series can safely absorb repetitive ESD
strikes above the maximum level of the IEC 61000-
4-2 international standard (Level 4, ±±kV contact
discharge) without performance degradation and safely
dissipate up to ±A (SPHV12-C) of induced surge current
(IEC 61000-4-5, 2nd Edition tP=±/20μs) with very low
clamping voltages.
Pinout
Features
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A
(5/50ns)
• Small SOD±±2 packaging
helps save board space
• AEC-Q101 qualified
1
2
• Lead-free and RoHS
compliant
• Lightning, IEC 61000-
4-5 2nd edition, ±A
(tP=±/20μs, SPHV12-C)
• Side exposed leadframe
helps to verify
solderability (SPHVxx-
KTG-C series)
• Low clamping voltage
• Low leakage current
Applications
Functional Block Diagram
• LED Lighting Modules
• Portable Instrumentation
• General Purpose I/O
• Mobile & Handhelds
• RS232 / RS4±5
• CAN and LIN Bus
ꢁ
ꢀ
Additional Information
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Daꢀasꢁeeꢀ
ꢀesoꢁrꢂes
Saꢀꢁꢂes
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV-C Series
Absolute Maximum Ratings
Symbol
Ppk
Parameter
Value
Units
W
200
Peak Pulse Power (tp=±/20μs)
OperatingTemperature
StorageTemperature
TOP
-40 to 125
-55 to 150
°C
TSTOR
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter
Rating
-55 to 150
150
Units
°C
StorageTemperature Range
Maximum JunctionTemperature
Maximum LeadTemperature (Soldering 20-40s)
°C
260
°C
SPHV12-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
VRWM
IR≤1μA
12.0
V
Reverse Breakdown Voltage
Leakage Current
VBR
IR=1mA
VR=12V
13.3
V
μA
V
ILEAK
1.0
IPP=1A, tp=±/20µs, Fwd
IPP=±A, tP=±/20μs, Fwd
19.0
25.0
Clamp Voltage1
VC
V
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
TLP, tp=100ns, I/O to GND
tp=±/20µs
0.4±
Ω
A
±.0
30
IEC61000-4-2 (Contact Discharge)
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
±30
±30
kV
kV
pF
ESD Withstand Voltage1
Diode Capacitance1
VESD
CD-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
SPHV15-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VBR
Test Conditions
IR≤1μA
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
15.0
V
V
IR=1mA
16.7
ILEAK
VR=15V
1.0
μA
V
IPP=1A, tp=±/20µs, Fwd
22.0
30.0
Clamp Voltage1
VC
IPP=5A, tp=±/20µs, Fwd
TLP, tp=100ns, I/O to GND
tp=±/20µs
V
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
0.43
5.0
24
A
IEC61000-4-2 (Contact Discharge)
±30
±30
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
kV
pF
CI/O-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV-C Series
SPHV24-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VBR
Test Conditions
IR≤1μA
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
24.0
V
V
IR=1mA
26.7
ILEAK
VR=24V
1.0
μA
V
IPP=1A, tp=±/20µs, Fwd
36.0
50.0
Clamp Voltage1
VC
IPP=3A, tp=±/20µs, Fwd
TLP, tp=100ns, I/O to GND
tp=±/20µs
V
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
0.65
3.0
17
A
IEC61000-4-2 (Contact Discharge)
±24
±30
kV
ESD Withstand Voltage1
VESD
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
kV
pF
Diode Capacitance1
CI/O-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
SPHV36-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VBR
Test Conditions
IR≤1μA
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
36.0
V
V
IR=1mA
40.0
ILEAK
VR=36V
1.0
μA
V
IPP=1A, tp=±/20µs, Fwd
52.0
65.0
Clamp Voltage1
VC
IPP=2A, tp=±/20µs, Fwd
TLP, tp=100ns, I/O to GND
tp=±/20µs
V
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
1.33
2.0
13
A
IEC61000-4-2 (Contact Discharge)
±15
±20
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
kV
pF
CI/O-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
Non-Repetitive Peak Pulse Power vs. PulseTime
Power Derating Curve
10
110
100
90
80
70
60
50
40
30
20
10
0
1
0.1
0.01
0
25
50
75
100
125
150
0.1
1
10
Pulse Duration - t (µs)
100
1000
p
o
(
Ambient Temperature - T
C)
A
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV-C Series
8/20µs PulseWaveform
SPHV12-CTransmission Line Pulsing(TLP) Plot
20
18
16
14
12
10
8
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
6
4
2
0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
5
10
15
20
25
30
Time (μs)
TLP Voltage (V)
SPHV15-CTransmission Line Pulsing(TLP) Plot
SPHV24-CTransmission Line Pulsing(TLP) Plot
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
45
50
55
0
5
10
15
20
25
30
35
TLP Voltage (V)
TLP Voltage (V)
SPHV36-CTransmission Line Pulsing(TLP) Plot
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90 100
TLP Voltage (V)
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV-C Series
Soldering Parameters
Reflow Condition
-Temperature Min (Ts(min)
Pb – Free assembly
tP
TP
Critical Zone
TL to TP
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
)
200°C
tL
-Time (min to max) (ts)
60 – 1±0 secs
Ramp-down
Average ramp up rate (Liquidus) Temp
(TL) to peak
3°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
3°C/second max
217°C
25
-Temperature (TL) (Liquidus)
Reflow
time to peak temperature
Time
-Temperature (tL)
60 – 150 seconds
260+0/-5 °C
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
± minutes Max.
260°C
Time 25°C to peakTemperature (TP)
Do not exceed
Product Characteristics
Ordering Information
Lead Plating
Pre-Plated Frame
Copper Alloy
Part Number
Package
Marking
B2
Min. Order Qty.
10000
Lead Material
SPHV12-01ETG-C
Lead Coplanarity
Substitute Material
Body Material
0.0004 inches (0.102mm)
Silicon
SPHV15-01ETG-C
SPHV24-01ETG-C
SPHV36-01ETG-C
SPHV12-01KTG-C
SPHV15-01KTG-C
SPHV24-01KTG-C
SPHV36-01KTG-C
B5
B4
B6
B2
B5
B4
B6
SOD±±2
Molded Epoxy, rated UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
SOD±±2
with side
exposed
leadframe
10000
Part Marking System
Part Numbering System
–
–
SPHV
01
x
**
T G
C
TVS Diode Arrays
®
Bidirectional
(SPA Diodes)
1
ꢀ
2
ꢁ
Voltage
G= Green
Number of
Channels
2: SPHV12-C
5: SPHV15-C
4: SPHV24-C
6: SPHV36-C
T= Tape & Reel
Package
E: SOD882
K: SOD882 with side
exposed leadframe
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV-C Series
Package Dimensions — SOD882(SPHVxx-01ETG-C)
1.20mm
0.30mm
0.45mm
Package
JEDEC
SOD882
MO-236
Symbol
Millimeters
Inches
Typ
Min
0.90
0.50
0.40
Typ
1.00
0.60
0.50
0.45
0.25
0.50
Max
1.10
Min
Max
0.041
0.026
0.024
A
B
C
D
E
F
0.037 0.039
0.022 0.024
0.016 0.020
0.01±
0.70
0.60
Recommended soldering pad layout (unit:mm)
0.20
0.45
0.35
0.55
0.00± 0.010
0.01± 0.020
0.012
0.022
*Some ETG packaging will look like KTG packaging
due to the differing package construction between
various suppliers.
Package Dimensions — SOD882 with side exposed leadframe(SPHVxx-01KTG-C)
ꢀ
Package
JEDEC
SOD±±2 with side exposed leadframe
MO-236
ꢜꢝꢠꢡ
ꢁ
Symbol
Millimeters
Inches
Typ
ꢜꢝꢜꢢꢣ
Min
0.90
0.50
0.90
0.55
0.40
0.50
0.20
0.40
Typ
1.00
Max
1.10
0.70
1.10
0.75
0.60
0.70
0.30
0.60
Min
Max
ꢜꢝꢞꢟ
ꢚꢒꢑ ꢘꢎꢏꢙ
A
B
C
D
E
F
0.037 0.039
0.020 0.024
0.037 0.039
0.022 0.026
0.016 0.020
0.020 0.024
0.00± 0.010
0.016 0.020
0.043
0.02±
0.043
0.030
0.024
0.02±
0.012
0.024
ꢍꢎꢉꢏ ꢄꢐꢑꢒꢓꢏꢉ ꢔꢏꢋꢉꢕꢖꢋꢗꢏ
0.60
ꢂ
ꢈ
1.00
1.20mm
0.65
0.30mm
0.45mm
ꢄ
ꢋ
ꢆ
0.50
0.60
ꢅ
G
H
I
0.25
ꢌ
ꢁꢒꢛꢛꢒꢗ ꢘꢎꢏꢙ
ꢉ
0.50
0.05 max
0.14
0.002 max
0.006
ꢇ
a
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ꢊ
Recommended soldering pad layout (unit:mm)
b
c
0.05
0.002
0.003
0.004
ꢃ
0.075
0.10
ꢍꢎꢉꢏ ꢘꢎꢏꢙ
d
Embossed CarrierTape & Reel Specification
Symbol
Millimeters
A
B
0.70+/-0.045
1.10+/-0.045
0.65+/-0.045
1.55+/-0.10
C
d
E
1.75+/-0.05
F
3.50+/-0.05
2.00+/-0.10
4.00+/-0.10
2.00+/-0.10
±.00 + 0.30 -0.10
P
P0
P1
W
ꢋꢊꢌ ꢍꢎꢇꢏ ꢎꢄꢂ ꢌꢃꢄ ꢐ ꢂꢃꢇꢁꢈꢉꢃꢊꢄ
ꢃꢄꢋꢎꢌꢁ ꢎꢄꢂ ꢑꢁꢁꢒ
ꢀꢁꢁꢂꢃꢄꢅ ꢆꢃꢇꢁꢈꢉꢃꢊꢄ
1
2
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
相关型号：
SPHV36-01KTG
Trans Voltage Suppressor Diode, 200W, 36V V(RWM), Unidirectional, 1 Element, Silicon, MO-236,
LITTELFUSE
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