1N5822 [LRC]
SCHOTTKY BARRIER DIODES; 肖特基势垒二极管
| 型号： | 1N5822 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | SCHOTTKY BARRIER DIODES |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
1N5820–1N5822
SCHOTTKY BARRIER DIODES
Maximum
Maximum Average
Rectified Current
@ Half-Wave
Resistive Load
60Hz
Maximum
Maximum
Reverse
Current
@ PRV
@ TA=25ºC
Package
Maximum
Peak
Forward
Voltage
Forward Peak
Surge Current
@ 8.3ms
TYPE
Dimensions
Reverse
Voltage
@ TA=25ºC
Superimposed
I R
PRV
VPK
IO @ TL
I
FM(Surge)
APK
I FM
V
V
FM
PK
mAdc
AAV
ºC
A PK
1N5820
1N5821
1N5822
20
30
40
95
95
95
2.0
2.0
2.0
0.475
0.500
0.525
3.0
80
3.0
DO - 201AD
1.0(25.4)
MIN
1.0(25.4)
.375(9.5)
.335(8.5)
MIN
.052(1.3)
.048(1.2)
DIA
.220(5.6)
.197(5.0)
DIA
DO – 201AD
5A–1/2
LESHAN RADIO COMPANY, LTD.
1N5820-1N5822
SCHOTTKY DIODE RATING & CHARACTERISTIC CURVES
FIG. 1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE FOWARD
SURGE CURRENT
80
4
3
2
TJ=TJMAX.
70
60
50
40
30
20
10
8.3ms Single Half Sine-Wave
(JEDEC Method)
1
Resistive or inductive load
0.375”(9.5mm)leadlength
0
0
20
40
60
80
100
120
140
LEAD TEMPE RATURE, (ºC)
1
2
4
6
8 10
20
40
60 80100
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
50
TJ=125 ºC
TJ=125 ºC
10
1
1.0
TJ=75 ºC
.1
TJ=25 ºC
.1
.01
TJ=25 ºC
.01
Pulse Width=300µs
1% Duty Cycle
.001
0
.2
.4
.6
.8
1
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
1,000
TJ =25ºC
f =1.0MHz
Vsig = 50mVp-p
10
100
1
.1
10
.1
1
10
100
.01
.1
1
10
100
t, PULSE DURATION, sec.
REVERSEVOLTAGE,(V)
5A–2/2
相关型号：
1N5822-B
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON
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