BC850CLT1 [LRC]
General Purpose Transistors(NPN Silicon); 通用晶体管（ NPN硅）
| 型号： | BC850CLT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors(NPN Silicon) |
| 文件： | 总4页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY,LTD.
General Purpose Transistors
NPN Silicon
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
MAXIMUM RATINGS
BC847
BC850
45
BC848
BC849
Rating
Symbol
V CEO
V CBO
V EBO
I C
BC846
65
Unit
V
BC850BLT1,CLT1
Collector–Emitter Voltage
Collector–Base Voltage
30
30
80
50
V
Emitter–Base Voltage
6.0
6.0
5.0
100
200
200
200
V
3
Collector Current — Continuous
Collector Current(Peak value)
Emitter Current(Peak value)
Base Current(Peak value)
100
200
200
200
100
mAdc
mAdc
mAdc
mAdc
I CM
200
1
I EM
200
I BM
200
2
SOLDERING CHARACTERISTICS
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Characteristic
Symbol
265
Unit
°C
Solder Heat Resistance
Solderability
240 to 265
°C
3
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
1
BASE
225
1.8
mW
Derate above 25°C
mW/°C
°C/W
2
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
EMITTER
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
TJ , Tstg
–55 to +150
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
BC846A,B
65
45
30
80
50
30
80
50
30
6.0
5.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
V(BR)CEO
V(BR)CES
V(BR)CBO
v
v
v
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector–Base Breakdown Voltage BC846A,B
(IC = 10 µA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B BC847A,B,C
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
BC848A,B,C, BC849B,C,
BC850B,C
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
—
—
15
nA
ICBO
—
5.0
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M3–1/4
LESHAN RADIO COMPANY,LTD.
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
h FE
—
—
90
150
270
180
290
520
—
—
—
—
(IC = 10 µA, V CE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
(I C = 2.0 mA, V CE = 5.0 V)
BC846A, BC847A, BC848A
110
200
420
—
220
450
800
0.25
0.6
—
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, V CE = 5.0 V)
V CE(sat)
V BE(sat)
V BE(on)
V
V
—
—
—
0.7
0.9
660
—
—
—
580
—
700
770
mV
Base–Emitter Voltage (I C = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
MHz
(I C = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A
V CE = 5.0 Vdc, RS = 2.0 kΩ,BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C
BC849B,C, BC850B,C
Cobo
NF
4.5
pF
dB
—
—
—
—
10
4.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.0
TA = 25°C
V
= 10 V
TACE= 25°C
1.5
V
BE(sat) @ IC /I B=10
1.0
0.8
0.6
VBE(on) @ VCE = 10 V
0.4
0.3
VCE(sat) @ IC /I B = 10
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mAdc)
IC , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
Figure 1. Normalized DC Current Gain
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
3.0
–55°C to +125°C
TA = 25°C
IC= 200 mA
IC = 100 mA
I C
=
I C
=
IC = 50 mA
10 mA
20 mA
0.2
1.0
10
100
0.02
0.1
1.0
10
20
IB , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
IC , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
M3–2/4
LESHAN RADIO COMPANY,LTD.
BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1
BC847/BC848
10.0
400
300
T A = 25°C
7.0
5.0
200
C ib
V
CE = 10V
100
80
3.0
2.0
T A = 25°C
C ob
60
40
30
20
1.0
0.4 0.6 0.81.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
IC , COLLECTOR CURRENT (mAdc)
VR , REVERSE VOLTAGE (VOLTS)
Figure 6. Current–Gain – Bandwidth Product
Figure 5. Capacitances
1.0
T A = 25°C
VCE = 5V
T A = 25°C
0.8
0.6
0.4
0.2
0
V BE(sat) @ IC /I B = 10
2.0
1.0
VBE @ VCE = 5.0 V
0.5
0.2
VCE(sat) @ I C /I B= 10
0.5 1.0 2.0
0.1 0.2
1.0
10
100
0.2
5.0 10 20
50 100 200
IC , COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
T A= 25°C
1.6
1.2
0.8
0.4
0
200mA
100mA
20mA
I C
50mA
θ
VB for V BE
–55°C to 125°C
=
10 mA
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
IC , COLLECTOR CURRENT (mA)
IB , BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
Figure 9. Collector Saturation Region
M3–3/4
LESHAN RADIO COMPANY,LTD.
BC846ALT1, BLT1 BC847ALT1, BLT1 CLT1 thru BC850BLT1, CLT1
BC846
40
20
V CE= 5 V
TA= 25°C
T A= 25°C
500
200
C ib
10
100
50
6.0
4.0
C ob
20
2.0
1.0
5.0 10
50 100
0.1 0.2 0.5
1.0 2.0
5.0 10 20
50 100
VR , REVERSE VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
M3–4/4
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