L2SB1197KRLT1G [LRC]

Low Frequency Transistor PNP Silicon; 低频晶体管PNP硅
L2SB1197KRLT1G
型号: L2SB1197KRLT1G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Low Frequency Transistor PNP Silicon
低频晶体管PNP硅

晶体 晶体管
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中文:  中文翻译
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LESHAN RADIO COMPANY, LTD.  
Low Frequency Transistor  
PNP Silicon  
L2SB1197K LT1  
*
3
FEATURE  
ƽHigh current capacity in compact package.  
IC = í0.8A.  
1
ƽEpitaxial planar type.  
2
ƽNPN complement: L2SD1781K  
ƽPb-Free Package is available.  
SOT– 23 (TO–236AB)  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
3
L2SB1197KQLT1  
AHQ  
3000/Tape&Reel  
COLLECTOR  
AHQ  
(Pb-Free)  
L2SB1197KQLT1G  
L2SB1197KRLT1  
L2SB1197KRLT1G  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
1
BASE  
AHR  
AHR  
(Pb-Free)  
2
EMITTER  
MAXIMUM RATINGS(Ta=25qC)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
40  
32  
V
5  
V
I
C
0.8  
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0.2  
W
°C  
°C  
Tj  
150  
Tstg  
55 to 150  
ELECTRICAL CHARACTERISTICS(Ta=25qC)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Conditions  
BVCBO  
BVCEO  
BVEBO  
40  
32  
5  
V
V
V
I
I
I
C
= −50  
= −1mA  
= −50  
µ
A
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
C
E
µ
A
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
0.5  
0.5  
390  
µA  
V
CB= −20V  
EB= −4V  
I
µA  
V
Emitter cutoff current  
V
V
IC/IB= −0.5A/ 50mA  
Collector-emitter saturation voltage  
DC current transfer ratio  
h
120  
V
V
V
CE= −3V, I  
C
= −100mA  
=50mA, f=100MHz  
=0A, f=1MHz  
f
T
200  
12  
MHz  
pF  
CE= −5V, I  
E
Transition frequency  
Cob  
30  
CB= −10V, I  
E
Output capacitance  
hFE values are classified as follows :  
Item(*)  
Q
R
hFE  
120~270  
180~390  
L2SB1197KLT1-1/3  
LESHAN RADIO COMPANY, LTD.  
L2SB1197KQLT1 L2SB1197KRLT1  
L2SB1197KLT1-2/3  
LESHAN RADIO COMPANY, LTD.  
L2SB1197KQLT1 L2SB1197KRLT1  
SOT-23  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3
S
B
1
2
INCHES  
MAX  
MILLIMETERS  
DIM  
MIN  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
V
G
A
B
C
D
G
H
J
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
C
H
J
D
K
L
K
S
V
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
L2SB1197KLT1-3/3  

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