LBSS260DW1T3G [LRC]

N-Channel 60-V Power Mosfet;
LBSS260DW1T3G
型号: LBSS260DW1T3G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

N-Channel 60-V Power Mosfet

文件: 总5页 (文件大小:432K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LBSS260DW1T1G  
S-LBSS260DW1T1G  
N-Channel 60-V Power Mosfet  
1. FEATURES  
High speed switch  
ESD protected  
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
SC88(SOT-363)  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
2. APPLICATION  
Portable appliances  
Load switch appliances  
3. DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
LBSS260DW1T1G  
LBSS260DW1T3G  
J3  
J3  
3000/Tape&Reel  
10000/Tape&Reel  
4. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VDSS  
VGS  
Limits  
Unit  
Vdc  
Drain–Source Voltage  
60  
Gate–to–Source Voltage – Continuous  
Drain Current  
±20  
Vdc  
mAdc  
– Continuous TA = 25°C  
– Pulsed (tp10μs)  
ID  
200  
800  
IDM  
5. THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Limits  
Unit  
Total Device Dissipation,  
PD  
380  
mW  
FR−4 Board (Note 1) @ TA = 25ºC  
Derate above 25ºC  
3.05  
328  
mW/ºC  
ºC/W  
Thermal Resistance,  
RΘJA  
Junction–to–Ambient(Note 1)  
Junction and Storage temperature  
Maximum Lead Temperature for Solder  
Purposes, for 10 seconds  
TJ,Tstg −55+150  
TL 260  
ºC  
ºC  
1. FR–4 = 1.0×0.75×0.062 in.  
Leshan Radio Company, LTD.  
Rev.O Feb. 2017  
1/5  
LBSS260DW1T1G, S-LBSS260DW1T1G  
Power MOSFET  
6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )  
OFF CHARACTERISTICS  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
-
Unit  
Vdc  
Drain–Source Breakdown Voltage  
(VGS = 0, ID = 250μAdc)  
VBRDSS  
60  
-
-
-
-
-
μAdc  
μAdc  
μAdc  
Zero Gate Voltage Drain Current  
(VGS = 0, VDS = 55 Vdc)  
IDSS  
IGSSF  
IGSSR  
0.1  
5
Gate–Body Leakage Current, Forward  
(VGS=20V, VDS=0V)  
-
Gate–Body Leakage Current, Reverse  
(VGS= -20V, VDS=0V)  
-
-5  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
Vdc  
VGS(th)  
RDS(on)  
(VDS=VGS,IDS=250μA)  
0.5  
-
1.0  
Static Drain–Source On–State Resistance  
(VGS=10V,IDS=0.5A)  
Ohms  
-
-
-
-
-
-
-
-
1.44  
2
(VGS=4.5V,ID=0.1A)  
(VGS=2.5V, IDS=0.05A)  
2.5  
3
(VGS=1.8V, IDS=0.01A)  
Diode Forward Voltage  
Vdc  
VSD  
(ISD = 0.5 A, VGS = 0 V )  
0.5  
-
1.35  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)  
Output Capacitance  
-
-
-
22.8  
3.5  
-
-
-
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)  
Reverse Transfer Capacitance  
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)  
SWITCHING CHARACTERISTICS  
2.9  
ns  
Turn-On Delay Time  
Turn-Off Delay Time  
(VDD = 30 Vdc , VGEN =  
10 V,RG =25Ω ,RL =60  
Ω,ID =500 mAdc)  
td(on)  
td(off)  
-
-
3.8  
19  
-
-
2.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.  
Leshan Radio Company, LTD.  
Rev.O Feb. 2017  
2/5  
LBSS260DW1T1G, S-LBSS260DW1T1G  
Power MOSFET  
7.ELECTRICAL CHARACTERISTICS CURVES  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Ta=25  
VDS=5V  
2.5V  
4.5V  
25℃  
150  
-55℃  
6.5V ,8.5V ,10V  
0.5  
1
1.5  
2
2.5  
3
0.5  
0.6  
0.7  
0.8  
0.9  
1
VGS,Gate to Source(V)  
ID,Drain current(A)  
RDSON vs. ID  
ID vs. VGS  
12.00  
10.00  
8.00  
6.00  
4.00  
2.00  
0.00  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
4V  
5V  
ID=0.5A  
Ta=25℃  
3V  
-55℃  
2.5V  
2V  
155℃  
25℃  
1.5V  
2
4
6
8
10  
0
1
2
3
4
5
VGS,Gate to Source Voltage(V)  
VDS,Drain to Source Voltage(V)  
RDSON vs. VDS  
RDSON vs. VGS  
Leshan Radio Company, LTD.  
Rev.O Feb. 2017  
3/5  
LBSS260DW1T1G, S-LBSS260DW1T1G  
Power MOSFET  
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)  
1
2.0  
1.5  
1.0  
0.5  
0.0  
ID=250uA  
150℃  
25℃  
0.1  
-55℃  
0.01  
-50 -25  
0
25  
50  
75 100 125 150  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
VSD(V)  
Tj(  
VGSTH vs. TJ  
IS vs. VSD  
Leshan Radio Company, LTD.  
Rev.O Feb. 2017  
4/5  
LBSS260DW1T1G, S-LBSS260DW1T1G  
Power MOSFET  
8.OUTLINE AND DIMENSIONS  
Notes:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MILLIMETERS  
INCHES  
MIN NOM MAX MIN NOM MAX  
DIM  
A
---  
---  
---  
1.10  
0.10  
---  
0
--- 0.043  
--- 0.004  
A1 0.00  
A2 0.70 0.90 1.00 0.027 0.035 0.039  
b
C
D
E
0.15 0.20 0.25 0.006 0.008 0.01  
0.08 0.15 0.22 0.003 0.006 0.009  
1.80 2.00 2.20  
0.07 0.078 0.086  
2.00 2.10 2.20 0.078 0.082 0.086  
E1 1.15 1.25 1.35 0.045 0.049 0.053  
e
0.65 BSC 0.026 BSC  
0.26 0.36 0.46 0.010 0.014 0.018  
L
L2  
0.15 BSC  
0.15  
0.006 BSC  
0.01  
aaa  
bbb  
ccc  
ddd  
0.30  
0.01  
0.10  
0.00  
0.10  
0.00  
9.SOLDERING FOOTPRINT  
Leshan Radio Company, LTD.  
Rev.O Feb. 2017  
5/5  

相关型号:

LBSS4240LT1G

General Purpose Transistors NPN Silicon
LRC

LBSS4240LT3G

General Purpose Transistors NPN Silicon
LRC

LBSS5240LT1G

General Purpose Transistors
LRC

LBSS5240LT1G_15

General Purpose Transistors
LRC

LBSS5240LT3G

General Purpose Transistors
LRC

LBSS8402DW1T1G

FETs and Diodes
LRC

LBSS84DW1T1G

Power MOSFET 130 mAmps, 50 Volts
LRC

LBSS84DW1T1G_15

Power Mosfet 130 mAmps
LRC

LBSS84LT

Power MOSFET 130m Amps, 50 Volts (P-Channel SOT -23)
LRC

LBSS84LT1

Power MOSFET 130m Amps, 50 Volts (P-Channel SOT -23)
LRC

LBSS84LT1G

Power MOSFET F30 mAmps, 50 Volts
LRC

LBSS84LT3G

Power MOSFET F30 mAmps, 50 Volts
LRC