LDTA123EET1G [LRC]
Bias Resistor Transistors; 偏置电阻晶体管
| 型号： | LDTA123EET1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistors |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
LDTA123EET1
With Monolithic Bias Resistor Network
3
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
ƽSimplifies Circuit Design
1
2
SC-89
PIN 3
COLLECTOR
(OUTPUT)
ƽReduces Board Space
PIN 1
BASE
(INPUT)
R
R
1
ƽReduces Component Count
ƽThe SC-89 Package can be Soldered using Wave or Reflow.
ƽAvailable in 8 mm, 7inch/3000 Unit Tape & Reel
2
PIN 2
EMITTER
(GROUND)
ƽThis is Pb-Free Device.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
SC-89
(Pb-Free)
LDTA123EET1G
6H
3000/Tape&Reel
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
MARKING DIAGRAM
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
3
V
CBO
CEO
V
50
Vdc
XX M
I
C
100
mAdc
2
1
THERMAL CHARACTERISTICS
Characteristic
xx = Specific Device Code
= Date Code
Symbol
Max
Unit
M
Total Device Dissipation
P
D
200 (Note 1)
300 (Note 2)
1.6 (Note 1)
2.4 (Note 2)
mW
T = 25°C
A
mW/°C
°C/W
°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
R
400 (Note 2)
θ
JA
Junction and Storage
Temperature Range
T
J, Tstg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Version 1.0
LDTA123EET1-1/3
LESHAN RADIO COMPANY, LTD.
LDTA123EET1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Min
Typ
Max
Unit
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
–
–
–
–
100
500
nAdc
nAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0 )
I
2.3
mAdc
EBO
–
–
EB
C
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 3)
(BR)CEO
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
15
–
8.0
–
–
FE
(V = 10 V, I = 5.0 mA)
CE
C
Collector-Emitter Saturation Voltage (I = 10 mA, I = 5 mA)
V
CE(sat)
Vdc
Vdc
Vdc
kΩ
C
B
0.25
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
–
0.2
–
–
–
OL
CC
B
L
Output Voltage (off)
V
OH
4.9
(V = 5.0 V, V = 0.5 V, R = 1.0 kΩ)
CC
B
L
Input Resistor
R
1.5
2.2
2.9
1
Resistor Ratio
R /R2
1
0.8
1
1.2
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
250
200
150
100
50
R
= 600°C/W
q
JA
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
Version 1.0
LDTA123EET1-2/3
LESHAN RADIO COMPANY, LTD.
LDTA123EET1
SC-89
A
-X-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
-Y-
1
2
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
K
MILLIMETERS
NOM
INCHES
NOM
G
2 PL
DIM MIN
MAX
1.70
0.95
0.80
0.33
MIN
0.059
0.030
0.024
0.009
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.50
1.60
0.85
0.063
0.034
3 PL
D
0.75
0.60
0.23
M
0.70
0.28
0.028
0.011
0.08 (0.003)
X Y
0.50 BSC
0.53 REF
0.15
0.020 BSC
0.021 REF
0.006
0.10
0.30
0.20
0.50
0.004
0.012
0.008
0.020
K
L
0.40
0.016
1.10 REF
−−−
−−−
0.043 REF
−−−
−−−
M
N
S
−−−
−−−
10
10
−−−
−−−
10
10
_
_
N
M
_
_
J
1.50
1.60
1.70
0.059
0.063
0.067
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Version 1.0
LDTA123EET1-3/3
相关型号：
©2020 ICPDF网 联系我们和版权申明