LDTA124EET1G [LRC]
Bias Resistor Transistors;
| 型号： | LDTA124EET1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistors 晶体管 |
| 文件： | 总12页 (文件大小：774K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
LDTA114EET1G Series
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
SC-89
PIN 3
COLLECTOR
(OUTPUT)
• Simplifies Circuit Design
PIN 1
BASE
(INPUT)
R
R
1
• Reduces Board Space
• Reduces Component Count
2
PIN 2
EMITTER
(GROUND)
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
compliance with
We declare that the material of product
RoHS requirements.
•
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Symbol
Value
50
Unit
Vdc
V
V
CBO
CEO
Collector-Emitter Voltage
Collector Current
50
Vdc
I
100
mAdc
C
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation, FR−4 Board
P
D
(Note 1) @ T = 25°C
Derate above 25°C
200
1.6
mW
mW/°C
A
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
600
°C/W
Total Device Dissipation, FR−4 Board
P
D
(Note 2) @ T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
Thermal Resistance, Junction−to−Ambient
(Note 2)
400
°C/W
R
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
Rev.O 1/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
ORDERING INFORMATION AND RESISTOR VALUES
†
Device
LDTA114EET1G
Marking
R1 (K)
R2 (K)
Package
SC−89
Shipping
6A
10
10
3000 Tape & Reel
3000 Tape & Reel
6B
6C
6D
6E
6F
6H
22
47
22
47
SC−89
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
10
47
∞
10
4.7
2.2
∞
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
LDTA143TET1G
LDTA123EET1G
2.2
LDTA143EET1G
43
6K
6L
4.7
4.7
22
4.7
47
SC−89
SC−89
LDTA143ZET1G
LDTA124XET1G
3000 Tape & Reel
47
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
LDTA123JET1G
6M
6N
6P
2.2
100
47
47
SC−89
SC−89
SC−89
100
22
LDTA115EET1G
LDTA144WET1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
LDTA114EET1G
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA115EET1G
LDTA144WET1G
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector−Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
C
B
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Rev.O 2/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
LDTA114EET1G
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA115EET1G
LDTA144WET1G
(V = 10 V, I = 5.0 mA)
100
140
140
250
250
15
CE
C
80
160
160
8.0
15
80
80
80
80
80
27
140
130
140
150
140
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
E
(I = 10 mA, I = 5 mA)
LDTA123EET1G
C
B
(I = 10 mA, I = 1 mA)
LDTA114TET1G/LDTA143TET1G
LDTA143ZET1G/LDTA124XET1G
LDTA143EET1G
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW
V
OL
LDTA114EET1G
LDTA124EET1G
)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA144EET1G
LDTA115EET1G
LDTA144WET1G
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
4.9
−
−
Vdc
CC
B
L
OH
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
LDTA114TET1G
CC
B
L
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
Input Resistor
LDTA114EET1G
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA115EET1G
LDTA144WET1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
15.4
1.54
70
32.9
Resistor Ratio
R /R
1
−
2
LDTA114EET1G/LDTA124EET1G
LDTA144EET1G/LDTA115EET1G
LDTA114YET1G
LDTA114TET1G/LDTA143TET1G
LDTA123EET1G/LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA144WET1G
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Rev.O 3/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
250
200
150
100
50
R
q
JA
= 600°C/W
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
Rev.O 4/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EET1G
1000
1
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
ꢀ0.1
100
−25°C
25°C
75°C
ꢀ0.01
10
ꢀ20
I , COLLECTOR CURRENT (mA)
1
10
100
0
ꢀ40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
2
1
0
ꢀ0.1
ꢀ0.01
V = 5 V
O
ꢀ0.001
0
10
20
30
40
50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Voltage versus Output Current
Rev.O 5/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA123EET1G
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
100
0.1
−25°C
75°C
25°C
25°C
0.01
10
1
T
A
= −25°C
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. VCE(sat) versus IC
Figure 9. DC Current Gain
12
10
8
100
10
1
f = 1 MHz
l = 0 V
E
75°C
T = 25°C
A
25°C
6
T
A
= −25°C
0.1
4
0.01
2
V = 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 10. Output Capacitance
Figure 11. Output Current versus Input Voltage
10
T
A
= −25°C
1
75°C
25°C
V
= 0.2 V
O
0.1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 12. Input Voltage versus Output Current
Rev.O 6/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA124EET1G
1000
10
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
75°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
I , COLLECTOR CURRENT (mA)
ꢀ40
ꢀ50
100
C
C
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
4
3
2
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
T ꢁ=ꢁ−25°C
A
E
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V = 5 V
O
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 15. Output Capacitance
Figure 16. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 17. Input Voltage versus Output Current
Rev.O 7/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA144EET1G
1
1000
100
10
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
ꢀ0.1
ꢀ0.01
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 18. VCE(sat) versus IC
Figure 19. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V = 5 V
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 22. Input Voltage versus Output Current
Rev.O 8/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114YET1G
1
180
160
140
120
100
80
T ꢀ=ꢀ75°C
A
I /I = 10
C B
V
= 10 V
CE
T ꢀ=ꢀ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 23. VCE(sat) versus IC
Figure 24. DC Current Gain
4.5
4
100
10
1
T ꢀ=ꢀ75°C
f = 1 MHz
l = 0 V
A
25°C
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
0.5
0
V = 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
10
+12 V
V = 0.2 V
O
25°C
T ꢀ=ꢀ−25°C
A
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 27. Input Voltage versus Output Current
Figure 28. Inexpensive, Unregulated Current Source
Rev.O 9/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LDTA115EET1G
1
1000
75°C
T
= −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
= 10 V
I /I = 10
CE
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
= 0 V
E
T
A
= −25°C
T
A
= 25°C
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 31. Output Capacitance
Figure 32. Output Current versus Input Voltage
100
T
A
= −25°C
25°C
10
V
= 0.2 V
O
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 33. Input Voltage versus Output Current
Rev.O 10/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LDTA144WET1G
1
1000
75°C
T
A
= −25°C
75°C
T
A
= −25°C
0.1
100
25°C
25°C
V
= 10 V
CE
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 34. Maximum Collector Voltage versus
Collector Current
Figure 35. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
= 0 V
E
T
A
= −25°C
T
A
= 25°C
25°C
0.1
0.01
V
= 5 V
O
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 36. Output Capacitance
Figure 37. Output Current versus Input Voltage
100
V
= 0.2 V
O
T
A
= −25°C
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 38. Input Voltage versus Output Current
Rev.O 11/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series
SC-89
A
-X-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
-Y-
1
2
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
K
MILLIMETERS
NOM
INCHES
NOM
G
2 PL
DIM MIN
MAX
1.70
0.95
0.80
0.33
MIN
0.059
0.030
0.024
0.009
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.50
1.60
0.85
0.063
0.034
3 PL
D
0.75
0.60
0.23
M
0.70
0.28
0.028
0.011
0.08 (0.003)
X Y
0.50 BSC
0.53 REF
0.15
0.020 BSC
0.021 REF
0.006
0.10
0.30
0.20
0.50
0.004
0.012
0.008
0.020
K
L
0.40
0.016
1.10 REF
−−−
−−−
0.043 REF
−−−
−−−
M
N
S
−−−
−−−
10
10
−−−
−−−
10
10
_
_
N
M
_
_
J
1.50
1.60
1.70
0.059
0.063
0.067
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 12/12
相关型号：
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