LDTA123YET1G_15 [LRC]
Bias Resistor Transistor;
| 型号： | LDTA123YET1G_15 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor |
| 文件： | 总3页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA123YET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
R1
R2
COLLECTOR
1
BASE
zAbsolute maximum ratings (Ta=25°C)
Limits
2
Parameter
Symbol
Unit
EMITTER
LDTA123YET1G
−50
Supply voltage
Input voltage
VCC
V
V
V
IN
−12 to +5
−100
I
O
Output current
mA
I
C(Max.)
−100
Power dissipation
P
D
150
mW
°C
Junction temperature
Storage temperature
Tj
Tstg
150
−55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
P8
2.2
10
3000/Tape & Reel
10000/Tape & Reel
LDTA123YET1G
LDTA123YET3G
P8
2.2
10
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
V
Conditions
−5V, I −100µA
−0.3V, I −20mA
−10mA/−0.5mA
−5V
−50V, V
V
V
I(off)
I(on)
−
−0.3
V
V
CC
=
O
=
Input voltage
−3
−
−
O=
O
=
Output voltage
Input current
V
O(on)
−
−
−0.1 −0.3
V
mA
µA
−
IO I
/I =
I
I
−
−
−3.8
−0.5
−
V
V
V
I=
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
I
O(off)
−
CC
=
I
=0V
G
I
33
1.54
3.6
−
−
O
=
−5V, IO=−10mA
R
1
2.2
4.5
250
2.86
5.5
−
kΩ
−
−
−
R
2
/R
1
f
T
∗
MHz
V
CE
E
=−10V, I =5mA, f=100MHz
∗
Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTA123YET1G
zElectrical characteristic curves
−
−
10m
V
CC
=
−
5V
5m
−
100
O
V =−0.3
V
−
−
2m
1m
−
50
Ta=100°C
25°C
−20
−
500µ
−10
−
−
200µ
100µ
−40°C
Ta=−40°C
25°C
−5
−
50µ
100°C
−2
−1
−
−
20µ
10µ
−
5µ
−
500m
−
2µ
1µ
−
−
200m
100m
−100µ
−
0
−
0.5
−
1.0
−
1.5
−
2.0
−
2.5
−
3.0
−1m
−10m
−100m
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : I
O
(A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.1 Input voltage vs. output current
(ON characteristics)
1k
−1
VO=−5V
IO
/II=20
500
−500m
200
100
50
−200m
−100m
−50m
Ta=100°C
25°C
20
10
5
Ta=100°C
25°C
−20m
−10m
−40°C
−40°C
−5m
2
1
−2m
−1m
−100µ
−1m
−10m
−100m
−100µ
−1m
−10m
−100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I (A)
O
3/4
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA123YET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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