LDTA124EM3T5G_15 [LRC]

Bias Resistor Transistors;
LDTA124EM3T5G_15
型号: LDTA124EM3T5G_15
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Bias Resistor Transistors

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LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
LDTA114EM3T5G  
Series  
With Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by integrating  
them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SOT-723 package  
which is designed for low power surface mount applications.  
ƽSimplifies Circuit Design  
3
2
1
SOT-723  
ƽReduces Board Space  
ƽReduces Component Count  
PIN 3  
COLLECTOR  
PIN 1  
BASE  
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.  
ƽAvailable in 4 mm, 8000 Unit Tape & Reel  
R
(OUTPUT)  
1
ƽ
compliance with  
We declare that the material of product  
(INPUT)  
R
2
RoHS requirements.  
PIN 2  
EMITTER  
(GROUND)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
MARKING DIAGRAM  
V
50  
Vdc  
I
C
100  
mAdc  
3
THERMAL CHARACTERISTICS  
Characteristic  
XX M  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
260 (Note 1)  
600 (Note 2)  
2.0 (Note 1)  
4.8 (Note 2)  
mW  
2
1
D
T = 25°C  
A
mW/°C  
°C/W  
°C  
Derate above 25°C  
xx = Specific Device Code  
M
= Date Code  
Thermal Resistance –  
Junction-to-Ambient  
R
480 (Note 1)  
205 (Note 2)  
θ
JA  
Junction and Storage  
Temperature Range  
T
–55 to +150  
J, Tstg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
1/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Package  
Shipping  
LDTA114EM3T5G  
LDTA124EM3T5G  
LDTA144EM3T5G  
LDTA114YM3T5G  
LDTA114TM3T5G  
LDTA143TM3T5G  
LDTA123EM3T5G  
LDTA143EM3T5G  
LDTA143ZM3T5G  
LDTA124XM3T5G  
LDTA123JM3T5G  
LDTA115EM3T5G  
LDTA144WM3T5G  
6A  
6B  
6C  
6D  
6E  
6F  
6H  
6J  
6K  
6L  
6M  
6N  
6P  
10  
22  
47  
10  
10  
4.7  
2.2  
4.7  
4.7  
22  
2.2  
100  
47  
10  
22  
47  
47  
2.2  
4.7  
47  
47  
47  
100  
22  
8000/Tape & Reel  
SOT−723  
2/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Collector−Base Cutoff Current (V = 50 V, I = 0)  
Symbol  
Min  
Typ  
Max  
Unit  
I
I
100  
500  
nAdc  
nAdc  
mAdc  
CB  
E
CBO  
Collector−Emitter Cutoff Current (V = 50 V, I = 0)  
CE  
B
CEO  
Emitter−Base Cutoff Current  
(V = 6.0 V, I = 0)  
LDTA114EM3T5G  
LDTA124EM3T5G  
LDTA144EM3T5G  
LDTA114YM3T5G  
LDTA114TM3T5G  
LDTA143TM3T5G  
LDTA123EM3T5G  
LDTA143EM3T5G  
LDTA143ZM3T5G  
LDTA124XM3T5G  
LDTA123JM3T5G  
LDTA115EM3T5G  
LDTA144WM3T5G  
I
0.5  
0.2  
0.1  
0.2  
0.9  
1.9  
2.3  
1.5  
0.18  
0.13  
0.2  
0.05  
0.13  
EBO  
EB  
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)  
V
V
50  
50  
Vdc  
Vdc  
C
E
(BR)CBO  
(BR)CEO  
Collector−Emitter Breakdown Voltage (Note 3.)  
(I = 2.0 mA, I = 0)  
C
B
ON CHARACTERISTICS (Note 3.)  
DC Current Gain  
LDTA114EM3T5G  
LDTA124EM3T5G  
LDTA144EM3T5G  
LDTA114YM3T5G  
LDTA114TM3T5G  
LDTA143TM3T5G  
LDTA123EM3T5G  
LDTA143EM3T5G  
LDTA143ZM3T5G  
LDTA124XM3T5G  
LDTA123JM3T5G  
LDTA115EM3T5G  
LDTA144WM3T5G  
h
35  
60  
80  
60  
FE  
(V = 10 V, I = 5.0 mA)  
100  
140  
140  
250  
250  
15  
CE  
C
80  
160  
160  
8.0  
15  
80  
80  
80  
80  
80  
27  
140  
130  
140  
150  
140  
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)  
V
CE(sat)  
0.25  
Vdc  
Vdc  
C
E
(I = 10 mA, I = 5 mA) LDTA123EM3T5G  
C
B
(I = 10 mA, I = 1 mA) LDTA114TM3T5G/LDTA143TM3T5G/  
C
B
LDTA143ZM3T5G/LDTA124XM3T5G/LDTA143EM3T5G  
Output Voltage (on)  
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)  
V
OL  
LDTA114EM3T5G  
LDTA124EM3T5G  
LDTA114YM3T5G  
LDTA114TM3T5G  
LDTA143TM3T5G  
LDTA123EM3T5G  
LDTA143EM3T5G  
LDTA143ZM3T5G  
LDTA124XM3T5G  
LDTA123JM3T5G  
LDTA144EM3T5G  
LDTA115EM3T5G  
LDTA144WM3T5G  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
CC  
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)  
CC  
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)  
CC  
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)  
CC  
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)  
V
4.9  
Vdc  
CC  
B
L
OH  
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)  
LDTA114TM3T5G  
CC  
B
L
LDTA143TM3T5G  
LDTA123EM3T5G  
LDTA143EM3T5G  
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%  
3/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Input Resistor  
LDTA114EM3T5G  
LDTA124EM3T5G  
LDTA144EM3T5G  
LDTA114YM3T5G  
LDTA114TM3T5G  
LDTA143TM3T5G  
LDTA123EM3T5G  
LDTA143EM3T5G  
LDTA143ZM3T5G  
LDTA124XM3T5G  
LDTA123JM3T5G  
LDTA115EM3T5G  
LDTA144WM3T5G  
R1  
7.0  
15.4  
32.9  
7.0  
7.0  
3.3  
1.5  
3.3  
3.3  
10  
22  
47  
10  
10  
4.7  
2.2  
4.7  
4.7  
22  
2.2  
100  
47  
13  
28.6  
61.1  
13  
13  
6.1  
2.9  
6.1  
6.1  
28.6  
2.86  
130  
61.1  
kW  
15.4  
1.54  
70  
32.9  
Resistor Ratio LDTA114EM3T5G/LDTA124EM3T5G/LDTA144EM3T5G  
R /R  
1 2  
/
0.8  
0.17  
1.0  
0.21  
1.2  
0.25  
LDTA115EM3T5G  
LDTA114YM3T5G  
LDTA114TM3T5G/LDTA143TM3T5G  
LDTA123EM3T5G/LDTA143EM3T5G  
LDTA143ZM3T5G  
LDTA124XM3T5G  
LDTA123JM3T5G  
0.8  
1.0  
0.1  
0.47  
0.047  
2.1  
1.2  
0.055  
0.38  
0.038  
1.7  
0.185  
0.56  
0.056  
2.6  
LDTA144WM3T5G  
300  
250  
200  
150  
100  
R
= 480°C/W  
q
JA  
50  
0
−ꢀ50  
0
50  
100  
150  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 1. Derating Curve  
4/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EM3T5G  
1000  
1
V
= 10 V  
CE  
I /I = 10  
C B  
T ꢁ=ꢁ75°C  
A
T ꢁ=ꢁ−25°C  
A
25°C  
ꢀ0.1  
100  
−25°C  
25°C  
75°C  
ꢀ0.01  
10  
ꢀ20  
I , COLLECTOR CURRENT (mA)  
1
10  
100  
0
ꢀ40  
50  
I , COLLECTOR CURRENT (mA)  
C
C
Figure 2. V  
versus I  
Figure 3. DC Current Gain  
CE(sat)  
C
4
3
100  
10  
1
25°C  
75°C  
f = 1 MHz  
l = 0 V  
E
T ꢁ=ꢁ−25°C  
A
T = 25°C  
A
2
1
0
ꢀ0.1  
ꢀ0.01  
V
O
= 5 V  
ꢀ0.001  
0
10  
20  
30  
40  
50  
0
1
ꢀ2  
3
ꢀ4  
ꢀ5  
ꢀ6  
ꢀ7  
ꢀ8  
ꢀ9  
10  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
V , INPUT VOLTAGE (VOLTS)  
in  
Figure 4. Output Capacitance  
Figure 5. Output Current versus Input Voltage  
100  
V
O
= 0.2 V  
T ꢁ=ꢁ−25°C  
A
10  
25°C  
75°C  
1
ꢀ0.1  
0
10  
ꢀ20  
ꢀ30  
ꢀ40  
ꢀ50  
I , COLLECTOR CURRENT (mA)  
C
Figure 6. Input Voltage versus Output Current  
5/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA124EM3T5G  
1000  
10  
V
= 10 V  
CE  
I /I = 10  
C B  
T ꢁ=ꢁ75°C  
A
1
25°C  
75°C  
25°C  
T ꢁ=ꢁ−25°C  
A
−25°C  
100  
ꢀ0.1  
10  
0.01  
1
10  
I , COLLECTOR CURRENT (mA)  
0
ꢀ20  
I , COLLECTOR CURRENT (mA)  
ꢀ40  
ꢀ50  
100  
C
C
Figure 7. V  
versus I  
Figure 8. DC Current Gain  
CE(sat)  
C
4
3
2
100  
10  
1
25°C  
75°C  
f = 1 MHz  
T ꢁ=ꢁ−25°C  
A
l = 0 V  
E
T = 25°C  
A
ꢀ0.1  
1
0
ꢀ0.01  
V
= 5 V  
ꢀ9  
O
ꢀ0.001  
0
1
ꢀ2  
ꢀ3  
ꢀ4  
ꢀ5  
ꢀ6  
ꢀ7  
ꢀ8  
10  
0
10  
20  
30  
40  
50  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
V , INPUT VOLTAGE (VOLTS)  
in  
Figure 9. Output Capacitance  
Figure 10. Output Current versus Input Voltage  
100  
V
= 0.2 V  
O
T ꢁ=ꢁ−25°C  
A
10  
25°C  
75°C  
1
ꢀ0.1  
0
10  
ꢀ20  
ꢀ30  
ꢀ40  
ꢀ50  
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Input Voltage versus Output Current  
6/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA144EM3T5G  
1
1000  
100  
10  
I /I = 10  
C B  
T ꢁ=ꢁ75°C  
A
T ꢁ=ꢁ−25°C  
A
25°C  
25°C  
75°C  
−25°C  
ꢀ0.1  
ꢀ0.01  
0
10  
20  
30  
40  
1
10  
I , COLLECTOR CURRENT (mA)  
100  
I , COLLECTOR CURRENT (mA)  
C
C
Figure 12. V  
versus I  
Figure 13. DC Current Gain  
CE(sat)  
C
1
100  
25°C  
−25°C  
T ꢁ=ꢁ75°C  
A
f = 1 MHz  
l = 0 V  
E
0.8  
10  
1
T = 25°C  
A
0.6  
0.4  
ꢀ0.1  
ꢀ0.01  
0.2  
0
V
= 5 V  
ꢀ5  
O
ꢀ0.001  
0
10  
20  
30  
40  
50  
0
1
2
3
ꢀ4  
ꢀ6  
ꢀ7  
ꢀ8  
ꢁ9  
10  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
V , INPUT VOLTAGE (VOLTS)  
in  
Figure 14. Output Capacitance  
Figure 15. Output Current versus Input Voltage  
100  
V
O
= 0.2 V  
T ꢁ=ꢁ−25°C  
A
25°C  
75°C  
10  
1
ꢁ0.1  
0
10  
ꢀ20  
ꢀ30  
ꢀ40  
ꢀ50  
I , COLLECTOR CURRENT (mA)  
C
Figure 16. Input Voltage versus Output Current  
7/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114YM3T5G  
1
180  
160  
140  
120  
100  
80  
T ꢁ=ꢁ75°C  
A
I /I = 10  
C B  
V
= 10 V  
CE  
T ꢁ=ꢁ−25°C  
A
25°C  
−25°C  
25°C  
0.1  
75°C  
0.01  
60  
40  
20  
0.001  
0
0
20  
40  
60  
80  
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 17. V  
versus I  
Figure 18. DC Current Gain  
CE(sat)  
C
4.5  
4
100  
10  
1
T ꢁ=ꢁ75°C  
f = 1 MHz  
A
25°C  
l = 0 V  
E
3.5  
3
T = 25°C  
A
−25°C  
2.5  
2
1.5  
1
0.5  
0
V
O
= 5 V  
0
2
4
6
8
10 15 20 25 30 35 40 45 50  
0
2
4
6
8
10  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
V , INPUT VOLTAGE (VOLTS)  
in  
Figure 19. Output Capacitance  
Figure 20. Output Current versus Input Voltage  
10  
+12 V  
V
O
= 0.2 V  
25°C  
T ꢁ=ꢁ−25°C  
A
75°C  
Typical Application  
for PNP BRTs  
1
LOAD  
0.1  
0
10  
20  
30  
40  
50  
I , COLLECTOR CURRENT (mA)  
C
Figure 21. Input Voltage versus Output Current  
Figure 22. Inexpensive, Unregulated Current Source  
8/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
TYPICAL ELECTRICAL CHARACTERISTICS — LDTA115EM3T5G  
1
1000  
75°C  
T
A
= −25°C  
100  
25°C  
0.1  
75°C  
25°C  
10  
1
−25°C  
V
CE  
= 10 V  
I /I = 10  
C
B
0.01  
0
1
2
3
4
5
6
7
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 23. Maximum Collector Voltage versus  
Collector Current  
Figure 24. DC Current Gain  
100  
10  
1.2  
25°C  
75°C  
1.0  
0.8  
0.6  
0.4  
f = 1 MHz  
I
= 0 V  
E
T
A
= −25°C  
T
A
= 25°C  
1
0.2  
0
V
= 5 V  
8
O
0.1  
0
1
2
3
4
5
6
7
9
10  
0
10  
20  
30  
40  
50  
60  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
V , INPUT VOLTAGE (VOLTS)  
in  
Figure 25. Output Capacitance  
Figure 26. Output Current versus Input Voltage  
100  
T
A
= −25°C  
25°C  
10  
V
O
= 0.2 V  
75°C  
1
0
2
4
6
8
10 12  
14  
16 18 20  
I , COLLECTOR CURRENT (mA)  
C
Figure 27. Input Voltage versus Output Current  
9/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
TYPICAL ELECTRICAL CHARACTERISTICS — LDTA144WM3T5G  
1
1000  
75°C  
T
A
= −25°C  
75°C  
T
A
= −25°C  
0.1  
100  
25°C  
25°C  
V
= 10 V  
CE  
I /I = 10  
C
B
0.01  
10  
0
5
10 15  
20 25 30 35 40 45 50  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 28. Maximum Collector Voltage versus  
Collector Current  
Figure 29. DC Current Gain  
100  
10  
1
1.4  
75°C  
f = 1 MHz  
1.2  
1.0  
0.8  
0.6  
0.4  
I
= 0 V  
E
T
A
= −25°C  
T
A
= 25°C  
25°C  
0.1  
0.01  
V
O
= 5 V  
0.2  
0
0.001  
0
1
2
3
4
5
6
7
8
9
10 11  
0
10  
20  
30  
40  
50  
60  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
V , INPUT VOLTAGE (VOLTS)  
in  
Figure 30. Output Capacitance  
Figure 31. Output Current versus Input Voltage  
100  
V
= 0.2 V  
O
T
A
= −25°C  
10  
75°C  
25°C  
1
0
5
10  
15  
20  
25  
I , COLLECTOR CURRENT (mA)  
C
Figure 32. Input Voltage versus Output Current  
10/11  
LESHAN RADIO COMPANY, LTD.  
LDTA114EM3T5G_Series  
PACKAGE DIMENSIONS  
SOT−723  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
−X−  
E
D
A
b1  
−Y−  
3
MILLIMETERS  
INCHES  
NOM MAX  
0.018 0.020 0.022  
HE  
L
1
2
DIM MIN  
NOM  
0.50  
0.20  
0.3  
0.12  
MAX  
0.55  
0.27 0.0059 0.0079 0.0106  
0.35 0.010 0.012 0.014  
0.17 0.0028 0.0047 0.0067  
MIN  
A
b
b1  
C
D
E
e
H E  
L
0.45  
0.15  
0.25  
0.07  
1.15  
0.75  
b 2X  
C
e
0.08 (0.0032) X Y  
1.20  
0.80  
1.25  
0.85  
0.045 0.047 0.049  
0.03 0.032 0.034  
0.016 BSC  
0.40 BSC  
1.20  
0.20  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
1.15  
0.15  
1.25  
0.045 0.047 0.049  
0.25 0.0059 0.0079 0.0098  
SOLDERING FOOTPRINT  
0.40  
0.0157  
0.40  
0.0157  
1.0  
0.039  
0.40  
0.0157  
0.40  
0.0157  
0.40  
0.0157  
mm  
inches  
ǒ
Ǔ
11/11  

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