LDTC113ZET3G [LRC]
Bias Resistor Transistor;
| 型号： | LDTC113ZET3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor |
| 文件： | 总3页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC113ZET1G
Applications
•
S-LDTC113ZET1G
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
2
1
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
•
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
3
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
R1
R2
COLLECTOR
1
BASE
zAbsolute maximum ratings (Ta=25°C)
2
Limits
Parameter
Symbol
Unit
EMITTER
LDTC113ZET1G
50
Supply voltage
Input voltage
V
CC
IN
V
V
V
−5 to +10
100
I
O
mA
Output current
IC(Max.)
100
Power dissipation
P
D
200
mW
°C
Junction temperature
Storage temperature
Tj
Tstg
150
−55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTC113ZET1G
N7
1
10
3000/Tape & Reel
10000/Tape & Reel
S-LDTC113ZET1G
LDTC113ZET3G
S-LDTC113ZET3G
N7
1
10
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
V
Conditions
=100µA
=20mA
=10mA/0.5mA
=5V
CC=50V, V
=5V, I =5mA
V
I(off)
I(on)
−
3
0.3
−
V
V
CC=5V, I
=0.3V, I
/I
O
Input voltage
V
−
O
O
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
7.2
0.5
−
V
mA
µA
−
IO I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
I
=0V
G
I
33
0.7
8
−
O
O
R
1
1
1.3
12
−
kΩ
−
−
R
2
/R
1
10
250
−
Transition frequency
f
T
∗
−
MHz
V
CE=10V, I
E= −5mA, f=100MHz
∗ Characteristics of built-in transistor
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTC113ZET1G
;S-LDTC113ZET1G
z
Electrical characteristic curves
100
50
10m
5m
O
V =0.3V
VCC=5V
2m
20
10
1m
500µ
Ta=100°C
25°C
5
200µ
Ta=−40°C
−40°C
100µ
50µ
25°C
2
100°C
1
20µ
500m
10µ
5µ
200m
100m
2µ
1µ
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
INPUT VOLTAGE : VI (off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
1
V
O=5V
l
O
/l
I
=20
500
500m
Ta=100°C
25°C
200
100
Ta=100°C
25°C
200m
100m
50m
−40°C
−40°C
50
20
10
5
20m
10m
5m
2
1
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I (A)
O
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTC113ZET1G
;S-LDTC113ZET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Rev.O 3/3
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