LMBT6428LT1G [LRC]
Amplifier Transistors; 放大器晶体管
| 型号： | LMBT6428LT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Amplifier Transistors |
| 文件： | 总5页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
AmplifierTransistors
NPN Silicon
We declare that the material of product
compliance with RoHS requirements.
LMBT6428LT1G
LMBT6429LT1G
z
ORDERING INFORMATION
Device
Marking
Shipping
3
LMBT6428LT1G
1KM
1KM
1L
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
LMBT6428LT3G
LMBT6429LT1G
LMBT6429LT3G
1
1L
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Value
6428LT1 6429LT1
Symbol
V CEO
V CBO
V EBO
I C
Unit
Vdc
3
COLLECTOR
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
50
60
45
55
Vdc
1
BASE
6.0
Vdc
Collector Current — Continuous
200
mAdc
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
LMBT6428LT1G = 1KM, LMBT6429LT1G = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
Vdc
LMBT6428LT1G
LMBT6429LT1G
50
45
—
—
(I C = 1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = 0.1mAdc, I E = 0)
V (BR)CBO
Vdc
LMBT6428LT1G
LMBT6429LT1G
60
55
—
—
(I C = 0.1mAdc, I E = 0)
Collector Cutoff Current
( V CE = 30Vdc, )
I CBO
I CBO
µAdc
µAdc
—
0.1
Collector Cutoff Current
( V CB = 30Vdc, I E = 0 )
—
—
0.01
0.01
Emitter Cutoff Current
I EBO
µAdc
( V EB = 5.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
––
(I C = 0.01 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
250
500
—
—
(I C = 0.1 mAdc, V CE
(I C = 1.0 mAdc, V CE
(I C = 10 mAdc, V CE
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
250
500
650
1250
LMBT6428LT1G
LMBT6429LT1G
250
500
—
—
LMBT6428LT1G
LMBT6429LT1G
250
500
—
—
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 0.5 mAdc)
(I C = 100 mAdc, I B = 0.5 mAdc)
Base–Emitter On Voltage
VCE(sat)
Vdc
Vdc
––
––
0.2
0.6
V BE(on)
0.56
0.66
(I C = 1.0 mAdc, V CE = 5.0mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)
Output Capacitance
f T
100
700
MHz
C obo
C ibo
––
––
3.0
8.0
pF
pF
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
R S
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
NOISE VOLTAGE
30
20
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
I
C = 10 mA
~
R S 0
~
~
R S
0
~
f = 10 Hz
10 kHz
3.0 mA
10
10
100 Hz
1.0 mA
7.0
5.0
7.0
5.0
1.0 kHz
300 µA
50 100 200 500 1k 2k
100 kHz
5.0
3.0
10 20
3.0
0.01 0.02
5k 10k 20k
50k 100k
0.05 0.1
0.2
0.5
1.0
2.0
10
f, FREQUENCY (Hz)
I C , COLLECTOR CURRENT (mA)
Figure 2. Effects of Frequency
Figure 3. Effects of Collector Current
2.0
16
12
8.0
4.0
0
10
7.0
5.0
BANDWIDTH = 1.0 Hz
I C = 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz
3.0
2.0
3.0 mA
1.0 mA
1.0
0.7
0.5
I C = 1.0 mA
500 µA
300 µA
100 µA
30 µA
100 µA
10 µA
0.3
0.2
10 µA
~
R S
0
~
0.1
10 20
50 100 200 500 1k 2k
5k 10k 20k
50k 100k
10 20
50 100 200 500 1k 2k
5k 10k 20k
50k 100k
f, FREQUENCY (Hz)
R S , SOURCE RESISTANCE (Ω)
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
20
300
200
BANDWIDTH = 1.0 Hz
I C = 10 mA
3.0 mA
16
12
I
C = 10 mA
3.0 mA
1.0 mA
100
70
50
1.0 mA
300 µA
30
20
300 µA
100 µA
30 µA
8.0
4.0
0
100 µA
10
7.0
5.0
10 µA
30 µA
10 µA
BANDWIDTH = 1.0 Hz
20 50 100 200 500 1k 2k
3.0
10
20
50 100 200 500 1k 2k
5k 10k 20k
50k 100k
10
5k 10k 20k
50k 100k
R S , SOURCE RESISTANCE (Ω)
R S , SOURCE RESISTANCE (Ω)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
3/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
4.0
3.0
V CE = 5.0 V
2.0
T A = 125°C
25°C
–55°C
1.0
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
–0.4
–0.8
–1.2
–1.6
–2.0
–2.4
T
J = 25°C
V BE @ V CE = 5.0 V
T
J = 25°C to 125°C
–55°C to 25°C
V CE(sat) @ I C /I B = 10
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
8.0
6.0
50
T J = 25°C
300
C ob
C ib
4.0
3.0
C eb
C cb
200
2.0
100
70
V CE = 5.0 V
T
J = 25°C
1.0
0.8
50
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
4/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
5/5
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