LMBT6520LT3G [LRC]
High Voltage Transistor PNP Silicon RoHS requirements.; 高压晶体管PNP硅RoHS要求。
| 型号： | LMBT6520LT3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | High Voltage Transistor PNP Silicon RoHS requirements. |
| 文件： | 总6页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
LMBT6520LT1G
Ordering Information
3
Device
Marking
2 Z
Shipping
1
3000/Tape&Reel
LMBT6520LT1G
LMBT6520LT3G
2
10000/Tape&Reel
2 Z
SOT–23
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I B
Value
–350
–350
–5.0
Unit
Vdc
3
COLLECTOR
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Vdc
1
BASE
Vdc
–250
–500
mA
2
EMITTER
Collector Current — Continuous
I C
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
LMBT6520LT1G = 2Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = –1.0 mA )
Collector–Base Breakdown Voltage(I E = –100 µA )
Emitter–Base Breakdown Voltage(I E = –10 µA)
Collector Cutoff Current( V CB = –250V )
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
–350
–350
–5.0
—
—
—
Vdc
Vdc
Vdc
nA
—
–50
Emitter Cutoff Current( V EB = –4.0V )
I EBO
—
–50
nA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBT6520LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
Symbol
Min
Max
Unit
hFE
—
(I C = –1.0 mAdc, V CE = –10 Vdc)
(I C = –10mAdc, V CE = –10 Vdc)
(I C = –30 mAdc, V CE = –10 Vdc)
(I C = –50 mAdc, V CE = –10 Vdc)
(I C = –100 mAdc, V CE = –10 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10mAdc, I B = –1.0mAdc)
(I C = –20 mAdc, I B = –2.0 mAdc)
(I C = –30 mAdc, I B = –3.0mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
Base – Emitter Saturation Voltage
(I C = –10mAdc, I B = –1.0mAdc,)
(I C = –20mAdc, I B = –2.0mAdc,)
(I C = –30mAdc, I B = –3.0mAdc,)
Base–Emitter On Voltage
20
30
30
20
15
—
—
200
200
—
VCE(sat)
Vdc
—
—
—
—
–0.30
–0.35
–0.50
–1.0
VBE(sat)
Vdc
Vdc
—
—
—
–0.75
–0.85
–0.90
V BE(on)
—
–2.0
(I C = –100mAdc, V CE = –10V )
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = –20 V, I C = –10mA, f = 20 MHz)
Collector –Base Capacitance
(V CB = –20 V, f = 1.0 MHz)
f T
40
—
—
200
6.0
MHz
pF
C cb
C eb
Emitter –Base Capacitance
100
pF
(V EB= –0.5 V, f = 1.0 MHz)
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBT6520LT1G
200
100
100
V CE = 10 V
T J = 125°C
25°C
70
50
70
50
T J = 25°C
V CE = 20 V
f = 20 MHz
–55°C
30
20
30
20
10
10
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Current–Gain — Bandwidth Product
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.5
2.0
T
J = 25°C
I C
= 10
I B
1.5
25°C to 125°C
1.0
0.5
V
BE(sat) @ I C /I B = 10
R
R
θVC for V CE(sat)
0
–55°C to 25°C
–55°C to 125°C
V BE(on) @ V CE = 10 V
–0.5
–1.0
–1.5
–2.0
–2.5
θVBfor V BE
V CE(sat) @ I C /I B = 10
V
CE(sat) @ I C /I B = 5.0
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients
1.0k
700
100
70
V CE(off) = 100 V
C /I B = 5.0
T J = 25°C
T J = 25°C
50
500
I
t d @ V BE(off) = 2.0 V
C eb
300
200
30
20
t r
100
70
10
7.0
5.0
50
C cb
30
20
3.0
2.0
10
1.0
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
0.2
0.5
1.0
2.0
5.0 10
20
50
100
200
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Turn–On Time
Figure 5. Capacitance
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LMBT6520LT1G
10k
7.0k
5.0k
t S
3.0k
2.0k
V CE(off) = 100 V
/I B = 5.0
1.0k
t r
I C
B1 = I B2
T J = 25°C
I
700
500
300
200
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 7. Turn–On Time
+V CC
V
CC ADJUSTED
2.2 k
FOR V CE(off) = 100 V
+10.8 V
50 Ω SAMPLING SCOPE
20 k
50
1.0 k
1/2MSD7000
–9.2 V
~
PULSE WIDTH
100 ms
~
(ADJUST FOR V (BE)off = 2.0 V)
APPROXIMATELY
–1.35 V
t r , t f
DUTY CYCLE
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
<5.0 ns
<1.0%
Figure 8. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
SINGLE PULSE
SINGLE PULSE
0.05
0.1
0.1
0.07
0.05
Z qJC(t) = r(t) • R qJC T J(pk) – T C = P (pk) Z qJC(t)
Z qJA(t) = r(t) • R qJA T J(pk) – T A = P (pk) Z qJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0
2.0
5.0
10
t, TIME (ms)
Figure 9. Thermal Response
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LMBT6520LT1G
FIGURE A
t P
P P
P P
t 1
1/f
DUTY CYCLE =t 1 f =
t 1
t P
PEAK PULSE POWER = P P
Design Note: Use of Transient Thermal Resistance Data
Rev.O 5/6
LESHAN RADIO COMPANY, LTD.
LMBT6520LT1G
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 6/6
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