LMBT6517LT1 [LRC]
High Voltage Transistors; 高电压晶体管
| 型号： | LMBT6517LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | High Voltage Transistors |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
3
LMBT6517LT1
COLLECTOR
1
BASE
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I B
Value
350
350
5.0
Unit
SOT–23
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Vdc
Vdc
Vdc
250
500
mAdc
mAdc
Collector Current — Continuous
I C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
TJ , Tstg
–55 to +150
DEVICE MARKING
LMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc )
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
350
350
6.0
—
—
—
—
50
50
Vdc
Vdc
Collector–Base Breakdown Voltage
(I C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I E = 10 µAdc )
Vdc
Collector Cutoff Current
( V CB = 250Vdc )
nAdc
nAdc
Emitter Cutoff Current
( V EB = 5.0Vdc )
I EBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LMBT6517–1/6
LESHAN RADIO COMPANY, LTD.
LMBT6517LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
—
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10mAdc, V CE = 10 Vdc)
(I C = 30 mAdc, V CE = 10 Vdc)
(I C = 50 mAdc, V CE = 10 Vdc)
(I C = 100 mAdc, V CE = 10 Vdc)
Collector–Emitter Saturation Voltage(3)
(I C = 10mAdc, I B = 1.0mAdc)
(I C = 20 mAdc, I B = 2.0 mAdc)
(I C = 30 mAdc, I B = 3.0mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc)
Base – Emitter Saturation Voltage
(I C = 10mAdc, I B = 1.0mAdc,)
(I C = 20mAdc, I B = 2.0mAdc,)
(I C = 30mAdc, I B = 3.0mAdc,)
Base–Emitter On Voltage
20
30
30
20
15
—
—
200
200
—
VCE(sat)
Vdc
Vdc
—
—
—
—
0.30
0.35
0.50
1.0
VBE(sat)
—
—
—
0.75
0.85
0.90
V BE(on)
—
2.0
Vdc
(I C = 100mAdc, V CE = 10Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz)
Collector –Base Capacitance
(V CB = 20 Vdc, f = 1.0 MHz)
f T
40
200
MHz
C cb
C eb
—
—
6.0
80
pF
pF
Emitter –Base Capacitance
(V EB=0.5 Vdc, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
LMBT6517–2/6
LESHAN RADIO COMPANY, LTD.
LMBT6517LT1
200
100
100
T J = 125°C
25°C
V CE = 10 V
70
50
70
50
T
V
J = 25°C
CE = 20 V
30
20
–55°C
30
20
f = 20 MHz
10
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Current–Gain — Bandwidth Product
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.5
I C
T J = 25°C
2.0
= 10
I B
1.5
25°C to 125°C
1.0
0.5
V
BE(sat) @ I C /I B = 10
R
θVC for V CE(sat)
0
–55°C to 25°C
V BE(on) @ V CE = 10 V
–0.5
–1.0
–1.5
–2.0
–2.5
–55°C to 125°C
R
θVC for V BE
V CE(sat) @ I C /I B = 10
V CE(sat) @ I C /I B = 5.0
20 30 50 70 100
1.0
2.0 3.0
5.0 7.0 10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
Figure 3. “On” Voltages
100
70
T J = 25°C
50
C eb
30
20
10
7.0
5.0
C cb
3.0
2.0
1.0
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
LMBT6517–3/6
LESHAN RADIO COMPANY, LTD.
LMBT6517LT1
10k
7.0k
5.0k
1.0k
700
500
V CE(off) = 100 V
I C /I B = 5.0
t s
t d @ V BE(off) = 2.0 V
3.0k
2.0k
T
J = 25°C
300
200
V CE(off) = 100 V
t r
1.0k
100
t f
I
C /I B = 5.0
I B1 = I
700
500
B2
70
50
T J = 25°C
300
200
30
20
100
10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 6. Turn–On Time
Figure 7. Turn–Off Time
+V CC
V CC ADJUSTED
2.2 k
FOR V CE(off) = 100 V
+10.8 V
50 Ω SAMPLING SCOPE
20 k
50
1.0 k
1/2MSD7000
–9.2 V
~
PULSE WIDTH 100 ms
~
(ADJUST FOR V (BE)off = 2.0 V)
APPROXIMATELY
–1.35 V
t r , t f
< 5.0 ns
DUTY CYCLE
<1.0%
FOR PNP TEST CIRCUIT,
REVERSEALL VOLTAGE POLARITIES
Figure 8. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
SINGLE PULSE
SINGLE PULSE
0.05
0.1
0.1
0.07
0.05
Z qJC(t) = r(t) • R qJC T J(pk) – T C = P (pk) Z qJC(t)
Z qJA(t) = r(t) • R qJA T J(pk) – T A = P (pk) Z qJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
t, TIME (ms)
Figure 9. Thermal Response
LMBT6517–4/6
LESHAN RADIO COMPANY, LTD.
LMBT6517LT1
FIGURE A
t P
P P
P P
t
1
1/f
DUTY CYCLE =t 1 f =
t 1
t P
PEAK PULSE POWER = P P
Design Note: Use of Transient Thermal Resistance Data
LMBT6517–5/6
LESHAN RADIO COMPANY, LTD.
LMBT6517LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
LMBT6517-6/6
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