MMBD301LT1 [LRC]
Silicon Hot-Carrier Diodes Schottky Barrier Diodes; 硅热载流子二极管肖特基势垒二极管
| 型号： | MMBD301LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diodes
MMBD301LT1
These devices are designed primarily for high–efficiency UHF and VHF detector
applications.They are readily adaptable to many other fast switching RF and digital
applications.They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements.They are also
available in a Surface Mount package.
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
•EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
3
•CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301
1
2
1
3
ANODE
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
CATHODE
MAXIMUM RATINGS(TJ=125°C unless otherwise noted)
MBD301
MMBD301LT1
value
30
Rating
Reverse Voltage
symbol
unit
V
Volts
R
Forward Power Dissipation
@TA=25 °C
P F
280
2.8
200
2.0
mW
mW/ °C
°C
Derate above 25 °C
Operating Junction
Temperature Range
Storage Temperature Range
DEVICE MARKING
MMBD301LT1=4T
T J
–55 to +125
–55 to +150
T stg
°C
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage(IR=10µA)
Total Capacitance(VR=15V,f=1.0MHz,)Figure1
Reverse Leakage(VR=25V)Figure3
Symbol
V (BR)R
C T
Min
30
—
Typ
—
Max
—
Unit
Volts
pF
0.9
1.5
IR
—
13
200
0.45
0.6
nAdc
Vdc
Vdc
Forward Voltage(IF=1.0mAdc)Figure4
Forward Voltage(IF=10mAdc)Figure4
V
—
0.38
0.52
F
V
—
F
NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk.
G16–1/2
LESHAN RADIO COMPANY, LTD.
MMBD301LT1
TYPICAL ELECTRICAL CHARACTERISTICS
500
400
300
200
100
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
f =1.0MHz
KRAKAUER METHOD
0
10
20
30
40
50
60
70
80
90
100
0
3.0
6.0
9.0
12
15
18
21
24
27
30
V R , REVERSE VOLTAGE (VOLTS)
I F , FORWARD CURRENT (mA)
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
100
10
T
A = 100°C
75°C
1.0
0.1
TA = 85°C
T
A= –40°C
1.0
0.1
25°C
0.01
T
A = 25°C
0.001
0
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
V R , REVERSE VOLTAGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I F(PEAK)
CAPACITIVE
CONDUCTION
I R(PEAK)
FORWARD
STORAGE
CONDUCTION
CONDUCTION
BALLAST
NETWORK
(PADS)
SAMPLING
SINUSOIDAL
GENERATOR
OSCILLOSCOPE
PADS
(50 Ω INPUT)
DUT
Figure 5. Krakauer Method of Measuring Lifetime
G16–2/2
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