MMBT5089LT1 [LRC]
Low Noise Transistors(NPN Silicon); 低噪声晶体管（ NPN硅）
| 型号： | MMBT5089LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Low Noise Transistors(NPN Silicon) |
| 文件： | 总4页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Low Noise Transistors
NPN Silicon
COLLECTOR
3
MMBT5088LT1
MMBT5089LT1
1
BASE
3
2
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
V CEO
V CBO
V EBO
I C
5088LT 15089LT1
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
30
35
25
30
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Vdc
4.5
50
Vdc
C
ollectorCurrent—Continuous
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
PD
225
mW
Derate above 25 °C
1.8
556
300
mW/ °C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
R θJA
P D
2.4
417
mW/ °C
°C/W
°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R θJA
T J , T stg
–55 to +150
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
Vdc
MMBT5088
MMBT5089
30
25
—
—
Collector–Base Breakdown Voltage
V(BR)CBO
Vdc
(I C = 100 µAdc, I E = 0)
MMBT5088
MMBT5089
35
30
—
—
Collector Cutoff Current
(V CB = 20 Vdc, I E = 0 )
(V CB = 15 Vdc, I E = 0 )
ICBO
nAdc
MMBT5088
MMBT5089
—
—
50
50
Emitter Cutoff Current
(VEB(off)= 3.0Vdc, I C = 0)
I EBO
nAdc
MMBT5088
MMBT5089
—
—
50
(VEB(off) = 4.5Vdc, I C = 0)
100
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M18–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5088LT1 PNP MMBT5089LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
—
(IC=100µAdc,VCE=5.0Vdc)
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
300
400
350
450
300
400
900
1200
—
(IC=1.0mAdc,V CE=5.0Vdc)
(IC = 10mAdc, VCE=5.0Vdc)
—
—
—
Collector–Emitter Saturation Voltage
(IC=10mAdc,IB=1.0mAdc)
VCE(sat)
VBE(sat)
Vdc
Vdc
—
—
0.5
0.8
Base–Emitter Saturation Voltage
(IC =10mAdc,IB=1.0mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC= 500 µAdc,VCE=5.0Vdc,f=20MHz)
Collector–Base Capacitance
f
MHz
pF
T
50
—
—
—
4.0
10
C cb
Ceb
h fe
(VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded)
Emitter–Base Capacitance
pF
(VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded)
Small Signal Current Gain
—
(IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz)
MMBT5088
MMBT5089
350
450
1400
1800
Noise Figure
N F
dB
(IC=100µAdc,VCE=5.0Vdc, RS=10κΩ,f=1.0kHz)
MMBT5088
MMBT5089
—
—
3.0
2.0
R S
in
IDEAL
en
TRANSISTOR
~
Figure 1.Transistor Noise Model
M18–2/4
LESHAN RADIO COMPANY, LTD.
MMBT5088LT1 MMBT5089LT1
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
NOISE VOLTAGE
30
20
30
20
BANDWIDTH=1.0Hz
C = 10 mA
BANDWIDTH=1.0Hz
I
R ~ 0
S
~
R ~ 0
S
~
f = 10Hz
10kHz
3.0mA
10
10
100Hz
1.0mA
7.0
5.0
7.0
5.0
1.0kHz
300µA
50 100 200 5001.0k
100kHz
5.0
3.0
3.0
10 20
2.0k 5.0k 10k
20k 50k100k
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
10
I C , COLLECTOR CURRENT (mA)
f, FREQUENCY (Hz)
Figure 3. Effects of Collector Current
Figure 2. Effects of Frequency
10
20
16
12
8.0
4.0
0
BANDWIDTH=1.0Hz
7.0
5.0
I
C=10mA
3.0
2.0
BANDWIDTH=10 Hz to15.7 kHz
3.0mA
1.0mA
300µA
1.0
0.7
I
C =1.0 mA
500µA
100µA
10µA
0.5
100µA
0.3
0.2
10µA
30µA
R
~ 0
~
S
0.1
10 20
50 100
200 5001.0k
2.0k 5.0k 10k
20k 50k100k
10 20
50 100 200 500 1k 2k
5k 10k 20k
50k 100k
R S , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
Figure 4. Noise Current
100 Hz NOISE DATA
300
200
20
BANDWIDTH=1.0Hz
I
C =10mA
3.0mA
I
C = 10mA
16
12
100µA
3.0mA
1.0mA
100
70
1.0mA
50
30
20
300µA
300µA
8.0
4.0
0
30µA
100µA
30µA
10
7.0
10µA
10µA
5.0
3.0
BANDWIDTH=1.0Hz
10 20
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
10 20
50 100
200 5001.0k
2.0k 5.0k 10k
20k 50k100k
R S , SOURCE RESISTANCE (OHMS)
R S , SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
Figure 6. Total Noise Voltage
M18–3/4
LESHAN RADIO COMPANY, LTD.
MMBT5088LT1 MMBT5089LT1
4.0
3.0
V
CE =5.0 V
T
A=125°C
25°C
–55°C
2.0
1.0
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
–0.4
–0.8
–1.2
–1.6
–2.0
–0.4
1.0
0.8
0.6
0.4
0.2
0
T
V
J =25°C
BE @ V CE = 5.0V
T
J=25°C to 125°C
–55°C to25°C
V
CE(sat)@ I C /I B =10
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
10 20
50 100
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
10 20
50 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
500
0.8
0.6
T
J = 25°C
300
200
Cob
Cib
0.4
0.3
Ceb
Ccb
0.2
100
V
T
CE = 5.0 V
J = 25°C
70
50
1.0
0.8
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5 1.0
2.0 5.0 10
20 50
100
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
Figure 11. Capacitance
M18–4/4
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