MMBTH24LT1 [LRC]
VHF Mixer Transistors(NPN Silicon); VHF混频器晶体管（ NPN硅）
| 型号： | MMBTH24LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | VHF Mixer Transistors(NPN Silicon) |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
VHF Mixer Transistors
NPN Silicon
MMBTH24LT1
3
COLLECTOR
1
3
BASE
1
2
EMITTER
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
30
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –Continuous
40
Vdc
4.0
50
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
MMBTH24LT1 = M3A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0 )
V (BR)CEO
V (BR)CBO
V (BR)EBO
30
40
—
—
—
—
Vdc
Vdc
Vdc
Collector–Base Breakdown Voltage
(I C = 100 µAdc , I E = 0)
—
—
Emitter–Base Breakdown Voltage
(I E = 10 µAdc , I C = 0)
4.0
Collector Cutoff Current
I CBO
—
—
50
nAdc
( V CB = 15Vdc , I E = 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M34–1/2
LESHAN RADIO COMPANY, LTD.
MMBTH24LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
Symbol
Min
Typ
Max
Unit
hFE
30
—
—
—
(I C = 8.0 mAdc, V CE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
f T
400
—
620
—
MHz
(V CE = 10 Vdc, I C = 8.0mAdc, f = 100MHz)
Collector –Base Capacitance
C cb
—
0.25
0.45
pF
dB
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Conversion Gain (213MHz to 45MHz)
(V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms)
(60MHz to 45MHz)
—
—
—
—
19
24
C G
24
20
—
(V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms)
3. Pulse Test: Pulse Width
< 300 µs, Duty Cycle < 2.0%.
M34–2/2
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