MMVL409T1 [LRC]
Silicon Tuning Diode; 硅调谐二极管
| 型号： | MMVL409T1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Silicon Tuning Diode |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
MMVL409T1
These devices are designed for general frequency control and tuning
applications. They provide solid–state reliability in replacement of mechanical
tuning methods.
VOLTAGEVARIABLE
CAPACITANCEDIODE
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
1
2
• Device Marking: X5
PLASTIC, CASE 477
SOD– 323
1
2
CATHODE
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMVL409T1
SOD–323
3000 / Tape & Reel
MAXIMUMRATINGS
Symbol
Rating
Value
20
Unit
VR
IF
Continuous Reverse Voltage
Peak Forward Current
Vdc
200
mAdc
THERMALCHARACTERISTICS
Symbol
Characteristic
Total Device Dissipation FR–5 Board,*
Max
Unit
PD
200
mW
TA = 25°C
Derate above 25°C
1.57
635
150
mW/°C
°C/W
°C
RθJA
TJ,Tstg
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse BreakdownVoltage
(IR = 10 µAdc)
V(BR)R
20
—
—
Vdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
IR
—
—
—
0.1
—
µAdc
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
TCC
300
ppm/°C
Ct, Diode Capacitance
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
CR, Capacitance Ratio
C3/C8
VR = 3.0 Vdc, f = 1.0 MHz
pF
f = 1.0 MHz(1)
Device
Min
Nom
Max
Min
Max
MMVL409T1
26
29
32
200
1.5
1.9
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
MMVL409T1–1/2
LESHAN RADIO COMPANY, LTD.
MMVL409T1
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit
Figure 1. Diode Capacitance
TA,AMBIENTTEMPERATURE(°C)
TA,AMBIENTTEMPERATURE(°C)
Figure 4. Diode Capacitance
Figure 3. Leakage Current
MMVL409T1–2/2
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