S-LDTD143TLT1G [LRC]
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network;
| 型号： | S-LDTD143TLT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network |
| 文件： | 总3页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTD143TLT1G
S-LDTD143TLT1G
Applications
•
Inverter, Interface, Driver
• Features
3
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
2
SOT-23
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
•
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
3
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
R1
COLLECTOR
1
zAbsolute maximum ratings (Ta=25°C)
BASE
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
2
EMITTER
VCBO
VCEO
V
EBO
50
40
5
V
V
I
C
500
mA
mW
C
Collector power dissipation
Junction temperature
Storage temperature
P
C
200
Tj
150
Tstg
−55 to +150
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTD143TLT1G
_
E2
4.7
3000/Tape & Reel
10000/Tape & Reel
S-LDTD143TLT1G
_
LDTD143TLT3G
S-LDTD143TLT3G
E2
4.7
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
I
C
=
50µA
1mA
BVCBO
BVCEO
BVEBO
50
40
5
−
−
−
−
V
V
I
C
=
I
E
=
50µA
−
−
V
V
CB
=50V
I
CBO
EBO
CE(sat)
FE
−
−
0.5
0.5
0.3
600
6.11
−
µA
µA
V
Emitter cutoff current
V
EB
=4V
I
−
−
Collector-emitter saturation voltage
DC current transfer ratio
I
C
/I
B
=50mA/2.5mA
V
−
−
V
CE
=
5V, I 50mA
C
=
h
100
3.29
−
250
4.7
200
−
Input resistance
−
R
1
kΩ
MHz
Transition frequency
V
CE
=10V, I
E=
−50mA, f
=100MHz
fT
∗
Characteristics of built-in transistor
∗
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTD143TLT1G;S-LDTD143TLT1G
zElectrical characteristic curves
1k
1
C
B
V
CE
=
5V
l /l =20
500
200
500m
200m
Ta=100 C
25 C
Ta=100 C
25 C
100
50
100m
50m
−40 C
−40 C
20
10
5
20m
10m
5m
2m
1m
2
1
500 1m 2m
5m 10m 20m 50m100m 200m 500m
500µ 1m 2m
5m 10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : I
(A)
C
COLLECTOR CURRENT : I
(A)
C
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage
vs. collector current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTD143TLT1G;S-LDTD143TLT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
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