LT5528EUF#PBF [Linear]
LT5528 - 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C;
| 型号： | LT5528EUF#PBF |
| 厂家： | 
Linear |
| 描述： | LT5528 - 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C |
| 文件： | 总30页 (文件大小：676K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC5588-1
200MHz to 6000MHz
Quadrature Modulator
with Ultrahigh OIP3
FEATURES
DESCRIPTION
The LTC®5588-1 is a direct conversion I/Q modulator
designed for high performance wireless applications. It
allows direct modulation of an RF signal using differential
baseband I and Q signals. It supports LTE, GSM, EDGE,
TD-SCDMA, CDMA, CDMA2000, W-CDMA, WiMax and
other communication standards. It can also be config-
ured as an image reject upconverting mixer, by applying
90° phase-shifted signals to the I and Q inputs. The I/Q
baseband inputs drive double-balanced mixers. An on-
chipbalunconvertsthedifferentialmixersignalstoa50Ω
single-ended RF output. Four balanced I and Q baseband
input ports are DC-coupled with a common mode volt-
age level of 0.5V. The LO path consists of an LO buffer
with single-ended or differential inputs and precision
quadrature generators to drive the mixers. The supply
voltage range is 3.15V to 3.45V. An external voltage can
be applied to the LINOPT pin to further improve 3rd-order
linearity performance. Accurate temperature dependent
calibrationscanbeperformedusingtheon-chipthermistor.
n
Frequency Range: 200MHz to 6000MHz
n
OutputIP3:+31dBmTypicalat2140MHz(Uncalibrated)
+35dBmTypical(UserOptimized)
n
Single Pin Calibration to Optimize OIP3
n
Low Output Noise Floor at 6MHz Offset:
No RF: –160.6dBm/Hz
P
= 5dBm: –155.5dBm/Hz
OUT
n
n
Integrated LO Buffer and LO Quadrature Phase
Generator
High Impedance DC Interface to Baseband Inputs
with 0.5V Common Mode Voltage*
50Ω Single-Ended LO and RF Ports
3.3V Operation
n
n
n
n
n
Fast Turn-Off/On: 10ns/17ns
Temperature Sensor (Thermistor)
24-Lead UTQFN 4mm × 4mm Package
APPLICATIONS
n
LTE, GSM/EDGE, W-CDMA, TD-SCDMA, CDMA2K,
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
*Contact LTC Marketing for other common mode voltage versions.
WiMax Basestations
n
Image Reject Upconverters
Point-to-Point Microwave Links
Broadcast Modulator
Military Radio
n
n
n
ACPR, AltCPR and ACPR, AltCPR
with Optimized LINOPT Voltage vs RF
Output Power at 2.14GHz for
TYPICAL APPLICATION
200MHz to 6000MHz Direct Conversion Transmitter Application
W-CDMA 1, 2 and 4 Carriers
–40
–50
–60
–70
–80
–90
3.3V
ACPR
1nF + 4.7μF
s2
4C
2C
ACPR (OPT)
AltCPR
V
CC
LTC5588-1
RF = 200MHz
TO 6000MHz
1C
I-DAC
VmI
I-CHANNEL
AltCPR (OPT)
6.8pF
DOWNLINK TEST
MODEL 64 DPCH
= 140MHz,
= 2280MHz
PA
0o
f
f
BB
LO
EN
0.2pF
90o
Q-CHANNEL
Q-DAC
VmI
LINOPT
BASEBAND
GENERATOR
LTC2630
1nF
50Ω
1nF
55881 TA01a
–20
–15
–10
–5
0
5
55881 TA01b
RF OUTPUT POWER PER CARRIER (dBm)
VCO/SYNTHESIZER
55881fb
1
LTC5588-1
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATION
(Note 1)
TOP VIEW
Supply Voltage.........................................................3.8V
Common Mode Level of BBPI, BBMI,
and BBPQ, BBMQ...................................................0.55V
24 23 22 21 20 19
Voltage on Any Pin...........................–0.3V to V + 0.3V
EN
GND
LOP
LOM
GND
NC
1
2
3
4
5
6
18
17
16
V
CC2
CC
G
N
GNDRF
RF
T
JMAX
.................................................................... 150°C
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range .................. –65°C to 150°C
GND
25
D
R
F
26
15 NC
14 GNDRF
13 NC
7
8
9
10 11 12
PF24 PACKAGE
VARIATION: PF24MA
24-LEAD (4mm s 4mm) PLASTIC UTQFN
T
= 150°C, θ = 43°C/W, θ = 7°C/W (AT EXPOSED PAD)
JA JC
JMAX
EXPOSED PADS (PINS 25, 26) ARE GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC5588IPF-1#PBF
LTC5588IPF-1#TRPBF
5881T
–40°C to 85°C
24-Lead (4mm × 4mm) Plastic UTQFN
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP AC-terminated with 50Ω to ground,
BBPI, BBMI, BBPQ, BBMQ common mode DC voltage VCMBB = 0.5VDC, I and Q baseband input signal = 100kHz CW, 1VP-P(DIFF) each, I
and Q 90° shifted, lower sideband selection, LINOPT pin floating, unless otherwise noted. Test circuit is shown in Figure 8.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
f
f
f
= 240MHz, f = 239.9MHz, P = 10dBm, C7 = 4.7nH, C8 = 33pF, Using U2 = Anaren P/N B0310J50100A00 Balun
LO
RF
LO
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
Output 1dB Compression
Output 2nd-Order Intercept
Output 3rd-Order Intercept
RF Output Noise Floor
S22 < –10dB (Note 10)
S11 < –10dB
200 to 244
200 to 1500
–5.9
MHz
MHz
RF(MATCH)
LO(MATCH)
G
20 • Log (V
/V
)
dB
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
1V
P-P(DIFF)
CW Signal, I and Q
–1.9
dBm
dBm
dBm
dBm
dBm/Hz
dBc
OUT
OP1dB
OIP2
OIP3
NFloor
IR
5.1
(Notes 4, 5)
(Notes 4, 6)
77.3
28
No Baseband AC Input Signal (Note 3)
(Note 7)
–168.3
–27
Image Rejection
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
–53
dBm
55881fb
2
LTC5588-1
ELECTRICAL CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP AC-terminated with 50Ω to ground,
BBPI, BBMI, BBPQ, BBMQ common mode DC voltage VCMBB = 0.5VDC, I and Q baseband input signal = 100kHz CW, 1VP-P(DIFF) each, I
and Q 90° shifted, lower sideband selection, LINOPT pin floating, unless otherwise noted. Test circuit is shown in Figure 8.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
f
f
f
= 450MHz, f = 449.9MHz, P = 10dBm, C7 = 2.7nH, C8 = 10pF, U2 = Anaren P/N B0310J50100A00 Balun
LO
RF
LO
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
S22 < –10dB (Note 10)
S11 < –10dB
350 to 468
MHz
MHz
dB
RF(MATCH)
LO(MATCH)
200 to 1500
G
20 • Log (V
/V
)
–2.6
1.4
8.6
72
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
1V
CW Signal, I and Q
P-P(DIFF)
dBm
dBm
dBm
dBm
OUT
OP1dB
OIP2
Output 1dB Compression
Output 2nd-Order Intercept
Output 3rd-Order Intercept
RF Output Noise Floor
(Notes 4, 5)
(Notes 4, 6)
OIP3
30
NFloor
No Baseband AC Input Signal (Note 3)
= 1dBm (Note 3)
–165.2
–159.8
dBm/Hz
dBm/Hz
P
OUT
IR
Image Rejection
(Note 7)
–53
–45
dBc
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
= 900MHz, f = 899.9MHz, P = 0dBm, C7 = 6.8pF, C8 = 0.2pF
RF LOM
dBm
f
f
f
LO
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
S22 < –10dB
S11 < –10dB
700 to 5000
MHz
MHz
dB
RF(MATCH)
LO(MATCH)
600 to 6000
G
20 • Log (V
/V
)
0
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
OUT
1V
CW Signal, I and Q
P-P(DIFF)
4.0
dBm
dBm
dBm
OP1dB
OIP2
Output 1dB Compression
Output 2nd-Order Intercept
Output 3rd-Order Intercept
12.1
73.6
(Notes 4, 5)
OIP3
(Notes 4, 6)
Optimized (Notes 4, 6, 11)
31.3
35.1
dBm
dBm
NFloor
RF Output Noise Floor
Image Rejection
No Baseband AC Input Signal (Note 3)
= 5dBm (Note 3) P = 10dBm
–161.6
–155.1
dBm/Hz
dBm/Hz
P
OUT
LOM
IR
(Note 7)
–45.5
dBc
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
EN = Low (Note 7)
–43.1
–68.9
dBm
dBm
f
f
f
= 1900MHz, f = 1899.9MHz, P
LOM
= 0dBm, C7 = 6.8pF, C8 = 0.2pF
S22 < –10dB
LO
RF
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
700 to 5000
600 to 6000
0.4
MHz
MHz
dB
RF(MATCH)
LO(MATCH)
S11 < –10dB
G
20 • Log (V
/V
)
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
1V
CW Signal, I and Q
P-P(DIFF)
4.4
dBm
dBm
dBm
OUT
OP1dB
OIP2
Output 1dB Compression
Output 2nd-Order Intercept
Output 3rd-Order Intercept
12.4
(Notes 4, 5)
58.8
OIP3
(Notes 4, 6)
Optimized (Notes 4, 6, 11)
30.3
32.7
dBm
dBm
NFloor
IR
RF Output Noise Floor
Image Rejection
No Baseband AC Input Signal (Note 3)
(Note 7)
–160.6
–54.4
–40.9
dBm/Hz
dBc
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
dBm
55881fb
3
LTC5588-1
ELECTRICAL CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP AC-terminated with 50Ω to ground,
BBPI, BBMI, BBPQ, BBMQ common mode DC voltage VCMBB = 0.5VDC, I and Q baseband input signal = 100kHz CW, 1VP-P(DIFF) each, I
and Q 90° shifted, lower sideband selection, LINOPT pin floating, unless otherwise noted. Test circuit is shown in Figure 8.
SYMBOL
PARAMETER
= 2140MHz, f = 2139.9MHz, P
LOM
CONDITIONS
= 0dBm, C7 = 6.8pF, C8 = 0.2pF
S22 < –10dB
MIN
TYP
MAX
UNITS
f
f
f
LO
RF
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
700 to 5000
600 to 6000
0.2
MHz
MHz
dB
RF(MATCH)
LO(MATCH)
S11 < –10dB
G
20 • Log (V
/V
)
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
1V
CW Signal, I and Q
P-P(DIFF)
4.2
dBm
dBm
dBm
OUT
OP1dB
OIP2
Output 1dB Compression
Output 2nd Order Intercept
Output 3rd Order Intercept
12.0
(Notes 4, 5)
58.5
OIP3
(Notes 4, 6)
Optimized (Notes 4, 6, 11)
30.9
35.1
dBm
dBm
NFloor
RF Output Noise Floor
No Baseband AC Input Signal (Note 3)
= 5dBm (Note 3) P = 10dBm
–160.6
–155.5
dBm/Hz
dBm/Hz
P
OUT
LOM
IR
Image Rejection
(Note 7)
–56.6
–39.6
dBc
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
dBm
f
f
f
= 2600MHz, f = 2599.9MHz, P
LOM
= 0dBm, C7 = 6.8pF, C8 = 0.2pF
S22 < –10dB
LO
RF
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
700 to 5000
600 to 6000
–0.2
MHz
MHz
dB
RF(MATCH)
LO(MATCH)
S11 < –10dB
G
20 • Log (V
/V
)
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
1V
CW Signal, I and Q
P-P(DIFF)
3.8
dBm
dBm
dBm
OUT
OP1dB
OIP2
Output 1dB Compression
Output 2nd-Order Intercept
Output 3rd-Order Intercept
11.4
(Notes 4, 5)
61.1
OIP3
(Notes 4, 6)
Optimized (Notes 4, 6, 11)
29.2
39.5
dBm
dBm
NFloor
IR
RF Output Noise Floor
Image Rejection
No Baseband AC Input Signal (Note 3)
(Note 7)
–160.5
–48.8
–35.5
dBm/Hz
dBc
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
dBm
f
f
f
= 3500MHz, f = 3499.9MHz, P
LOM
= 0dBm, C7 = 6.8pF, C8 = 0.2pF
S22 < –10dB
LO
RF
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
700 to 5000
600 to 6000
–1.0
MHz
MHz
dB
RF(MATCH)
LO(MATCH)
S11 < –10dB
G
20 • Log (V
/V
)
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
1V
CW Signal, I and Q
P-P(DIFF)
3.0
dBm
dBm
dBm
OUT
OP1dB
OIP2
Output 1dB Compression
Output 2nd-Order Intercept
Output 3rd-Order Intercept
10.5
(Notes 4, 5)
67.6
OIP3
(Notes 4, 6)
Optimized (Notes 4, 6, 11)
23.5
27.5
dBm
dBm
NFloor
IR
RF Output Noise Floor
Image Rejection
No Baseband AC Input Signal (Note 3)
(Note 7)
–160.1
–36.8
–37.5
dBm/Hz
dBc
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
dBm
f
f
f
= 5800MHz, f = 5799.9MHz, P
LOM
= 0dBm, C7 = 6.8pF, C8 = 0.2pF
S22, < –10dB
LO
RF
RF Match Frequency Range
LO Match Frequency Range
Conversion Voltage Gain
Absolute Output Power
700 to 5000
600 to 6000
–9.1
MHz
MHz
dB
RF(MATCH)
LO(MATCH)
S11, < –10dB
G
20 • Log (V
/V
)
V
RF(OUT)(50Ω) IN(DIFF)(I or Q)
P
1V
CW Signal, I and Q
P-P(DIFF)
–5.1
dBm
OUT
55881fb
4
LTC5588-1
ELECTRICAL CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP AC-terminated with 50Ω to ground,
BBPI, BBMI, BBPQ, BBMQ common mode DC voltage VCMBB = 0.5VDC, I and Q baseband input signal = 100kHz CW, 1VP-P(DIFF) each, I
and Q 90° shifted, lower sideband selection, LINOPT pin floating, unless otherwise noted. Test circuit is shown in Figure 8.
SYMBOL
OP1dB
OIP2
PARAMETER
CONDITIONS
MIN
TYP
1.9
MAX
UNITS
dBm
Output 1dB Compression
Output 2nd-Order Intercept
Output 3rd-Order Intercept
RF Output Noise Floor
Image Rejection
(Notes 4, 5)
35.4
dBm
OIP3
(Notes 4, 6)
17.9
dBm
NFloor
IR
No Baseband AC Input Signal (Note 3)
(Note 7)
–156.7
–32.3
–30.2
dBm/Hz
dBc
LOFT
Carrier Leakage (LO Feedthrough) (Note 7)
dBm
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BW
Baseband Bandwidth
Baseband Input Current
Input Resistance
–1dB Bandwidth, R
= 25Ω, Single Ended
SOURCE
430
–136
–3
MHz
μA
kΩ
V
BB
I
Single Ended
b(BB)
R
Single Ended
IN(SE)
CMBB
SWING
V
V
DC Common Mode Voltage
Amplitude Swing
Externally Applied
0.5
No Hard Clipping, Single Ended
0.86
V
P-P
Power Supply (V , V
)
CC1 CC2
V
Supply Voltage
3.15
275
3.3
303
33
3.45
325
900
V
CC
I
I
t
t
t
t
t
Supply Current
EN = High
mA
μA
ns
ns
ns
ns
ns
CC(ON)
CC(OFF)
ON
Supply Current, Sleep Mode
Turn-On Time
EN = 0V
EN = Low to High (Notes 8, 13)
EN = High to Low (Notes 9, 13)
EN = Low to High, <–60dBc (Note 13)
EN = Low to High, <–60dBm (Note 13)
17
Turn-Off Time
10
OFF
Image Rejection Settling
LO Suppression Settling
Phase Settling
80
ON(IR)
ON(LO)
ON(PHASE)
85
EN = Low to High, Phase < 0.5°, f
Constant Board Temperature
= f = 2.14GHz,
RF
70
LOM
V
V
LINOPT Voltage
Floating LINOPT Pin, EN = High
Floating LINOPT Pin, EN = Low
2.56
3.3
V
V
LINOPT(ON)
LINOPT Voltage, Sleep Mode
LINOPT(OFF)
Enable Pin
Enable
Input High Voltage
Input High Current
EN = High
EN = 3.3V
2
V
80
33
nA
Sleep
Input Low Voltage
Input Low Current
EN = Low
EN = 0V
1
V
μA
Temperature Sensor (Thermistor) (Note 14)
R
Thermistor Resistance
Temperature Slope
EN = Low, I = 100μA
1.385
11
kΩ
T
RT
EN = Low, I = 100μA
Ω/°C
RT
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5588-1 is guaranteed functional over the operating
temperature range from –40°C to 85°C.
Note 3: At 6MHz offset from the LO signal frequency. 100nF between BBPI
and BBMI, 100nF between BBPQ and BBMQ.
Note 4: Baseband inputs are driven with 4.5MHz and 5.5MHz tones.
Note 8: RF power is within 10% of final value.
Note 9: RF power is at least 30dB down from its ON state.
Note 10: RF matching center frequency is set below band center
frequency in order to align RF passband center frequency with band center
frequency.
Note 11: An external voltage is optimally set at the LINOPT pin for best
output 3rd-order intercept.
Note 12: I and Q baseband Input signal = 10MHz CW, 0.8V
I and Q 0° shifted.
each,
P-P, DIFF
Note 5: IM2 is measured at f – 10MHz.
LO
Note 13: f
= 2.14GHz, P = 0dBm, f = 134MHz; LO feedthrough
LOM BB
LOM
Note 6: IM3 is measured at f – 3.5MHz and f – 6.5MHz.
and image rejection is nulled during previous EN = high cycles, C5 = C6 =
10pF; C13 = 0; Extra 680μF capacitors (SANYO 6SEPC680M) from TP1 to
ground and TP2 to ground, RF noise filter with 93MHz bandwidth is used.
LO
LO
OIP3 = lowest of (1.5 • P{f -5.5MHz} – 0.5 • P{f -6.5MHz})
LO
LO
and (1.5 • P{f -4.5MHz} – 0.5 • P{f -3.5MHz}).
LO
LO
Note 7: Without image or LO feedthrough nulling (unadjusted).
Note 14: Thermistor performance is guaranteed by Design.
55881fb
5
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
Floating LINOPT Voltage
vs Temperature
Voltage Gain vs RF Frequency
(PLOM = 0dBm or PLOM = 10dBm)
Supply Current vs Temperature
320
310
300
290
280
2.7
2.6
2.5
2.4
2
0
3.45V
3.45V
3.3V
–2
–4
–6
–8
–10
3.3V
3.15V
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.15V
–40
–15
10
35
60
85
–40
–15
10
35
60
85
0
2
3
4
5
6
1
TEMPERATURE (°C)
RF FREQUENCY (GHz)
TEMPERATURE (°C)
55881 G01
55881 G02
55881 G03
Output IP3 vs RF Frequency
(PLOM = 0dBm)
Output IP3 vs RF Frequency
(PLOM = 10dBm)
Output IP2 vs RF Frequency
(PLOM = 0dBm)
90
80
70
60
50
40
30
40
30
20
10
40
30
20
10
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
0
0
0
1
2
3
4
5
6
0
2
3
4
5
6
0
1
2
3
4
5
6
1
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
55881 G04
55881 G06
55881 G05
Output IP2 vs RF Frequency
(PLOM = 10dBm)
P1dB vs RF Frequency
LO Feedthrough to RF Output vs
LO Frequency (PLOM = 0dBm)
(PLOM = 0dBm or PLOM = 10dBm)
14
12
10
8
90
80
70
60
50
40
30
–20
–30
–40
–50
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
6
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
4
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
2
0
–60
4
6
0
1
2
3
5
0
2
3
4
5
6
0
1
2
3
4
5
6
1
LO FREQUENCY (GHz)
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
55881 G08
55881 G07
55881 G09
55881fb
6
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
LO Feedthrough to RF Output
vs LO Frequency (PLOM = 10dBm)
LO Feedthrough to RF Output
vs LO Frequency for EN = Low
Image Rejection vs LO Frequency
(PLOM = 0dBm)
–20
–30
–40
–50
–60
–70
–80
–20
–30
–40
–50
–20
–30
–40
–50
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
P
= 10dBm
LOM
P
= 0dBm
LOM
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–60
–60
0
2
3
4
5
6
0
1
2
3
4
5
6
1
0
1
2
3
4
5
6
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
55881 G12
55881 G10
55881 G11
LO Feedthrough to RF Output
vs RF Power (PLOM = 0dBm,
fRF = 900MHz)
LO Feedthrough to RF Output
vs RF Power (PLOM = 0dBm,
fRF = 2140MHz)
Image Rejection vs RF Power
(PLOM = 0dBm, fRF = 900MHz)
–40
–41
–42
–43
–40
–45
–50
–55
–36
–38
–40
–42
–44
–46
–48
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–44
–45
–15
–5
0
5
10
15
–15
–5
0
5
10
15
–10
–10
–15
–5
0
5
10
15
–10
RF POWER (dBm)
RF POWER (dBm)
RF POWER (dBm)
55881 G13
55881 G14
55881 G15
Image Rejection vs RF Power
(PLOM = 0dBm, fRF = 2140MHz)
Output IP3 vs LINOPT Voltage
(fLO = 450MHz, PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
(fLO = 900MHz, PLOM = 0dBm)
40
30
20
10
40
30
20
10
–48
–50
–52
–54
–56
–58
–60
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
5 PARTS SHOWN
5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–15
–5
0
5
10
15
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
–10
LINOPT VOLTAGE (V)
LINOPT VOLTAGE (V)
RF POWER (dBm)
55881 G16
55881 G17
55881 G18
55881fb
7
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
Output IP3 vs LINOPT Voltage
(fLO = 1900MHz, PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
(fLO = 2140MHz, PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
(fLO = 2600MHz, PLOM = 0dBm)
40
30
20
10
40
30
20
10
40
30
20
10
5 PARTS SHOWN
5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, –40°C
5 PARTS SHOWN
3.0 3.5
2.0
2.5
3.0
3.5
2.0
2.5
2.0
2.5
3.0
3.5
LINOPT VOLTAGE (V)
55881 G20
55881 G19
LINOPT VOLTAGE (V)
LINOPT VOLTAGE (V)
55881 G21
Output IP3 vs RF Frequency for High
Side LO Injection (fBB1 = 140MHz,
fBB2 = 141MHz, PLOM = 0dBm)
Output IP3 vs RF Frequency for High
Side LO Injection (fBB1 = 140MHz,
fBB2 = 141MHz, PLOM = 10dBm)
Output IP3 vs LINOPT Voltage
(fLO = 3500MHz, PLOM = 0dBm)
40
30
20
10
40
30
20
10
40
30
20
10
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
f = f + f
LO RF BB1
5 PARTS SHOWN
f
= f + f
LO RF BB1
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
0
0
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
0
1
2
3
4
5
6
55881 G22
LINOPT VOLTAGE (V)
RF FREQUENCY (GHz)
55881 G24
RF FREQUENCY (GHz)
55881 G23
Output IP3 vs LINOPT Voltage
(fRF1 = 449MHz, fRF2 = 450MHz,
PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
Output IP3 vs LINOPT Voltage
(fRF1 = 899MHz, fRF2 = 900MHz,
PLOM = 0dBm)
(fRF1 = 1899MHz, fRF2 = 1900MHz,
PLOM = 0dBm)
40
30
20
10
40
30
20
10
40
30
20
10
f = 2040MHz
LO
5 PARTS SHOWN
f
= 590MHz
f
= 1040MHz
LO
LO
5 PARTS SHOWN
5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
LINOPT VOLTAGE (V)
55881 G27
55881 G26
55881 G25
LINOPT VOLTAGE (V)
LINOPT VOLTAGE (V)
55881fb
8
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
Output IP3 vs LINOPT Voltage
(fRF1 = 2139MHz, fRF2 = 2140MHz,
PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
(fRF1 = 2599MHz, fRF2 = 2600MHz,
PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
(fRF1 = 3499MHz, fRF2 = 3500MHz,
PLOM = 0dBm)
40
30
20
10
40
30
20
10
40
30
20
10
f
= 2280MHz
f
= 2740MHz
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
f
= 3640MHz
LO
LO
LO
5 PARTS SHOWN
5 PARTS SHOWN
5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
LINOPT VOLTAGE (V)
55881 G28
55881 G29
55881 G30
LINOPT VOLTAGE (V)
LINOPT VOLTAGE (V)
Output IP3 vs RF Frequency for Low
Side LO Injection (fBB1 = 140MHz,
fBB2 = 141MHz, PLOM = 0dBm)
Output IP3 vs RF Frequency for Low
Side LO Injection (fBB1 = 140MHz,
fBB2 = 141MHz, PLOM = 10dBm)
Output IP3 vs LINOPT Voltage
(fRF1 = 450MHz, fRF2 = 451MHz,
PLOM = 0dBm)
40
30
20
10
40
30
20
10
40
30
20
10
f
= f – f
LO RF BB1
f
= 310MHz
LO
f
= f – f
LO RF BB1
5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
0
0
0
1
2
3
4
5
6
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
RF FREQUENCY (GHz)
LINOPT VOLTAGE (V)
55881 G31
RF FREQUENCY (GHz)
55881 G33
55881 G32
Output IP3 vs LINOPT Voltage
Output IP3 vs LINOPT Voltage
(fRF1 = 1900MHz, fRF2 = 1901MHz,
PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
(fRF1 = 2140MHz, fRF2 = 2141MHz,
PLOM = 0dBm)
(fRF1 = 900MHz, fRF2 = 901MHz,
PLOM = 0dBm)
40
30
20
10
40
30
20
10
40
30
20
10
f
= 760MHz
f
= 1760MHz
LO
f
= 2000MHz
LO
LO
5 PARTS SHOWN
5 PARTS SHOWN
5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
LINOPT VOLTAGE (V)
55881 G35
LINOPT VOLTAGE (V)
55881 G34
LINOPT VOLTAGE (V)
55881 G36
55881fb
9
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
Output IP3 vs LINOPT Voltage
(fRF1 = 2600MHz, fRF2 = 2601MHz,
PLOM = 0dBm)
Output IP3 vs LINOPT Voltage
(fRF1 = 3500MHz, fRF2 = 3501MHz,
PLOM = 0dBm)
Gain Distribution at 2140MHz
40
30
20
10
40
30
20
10
50
40
30
85°C
25°C
–40°C
f
= 3360MHz
LO
5 PARTS SHOWN
20
10
0
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
f
= 2460MHz
LO
5 PARTS SHOWN
2.0
2.5
3.0
3.5
–0.6 –0.4 –0.2
0
0.2
0.4
0.6
2.0
2.5
3.0
3.5
55881 G37
LINOPT VOLTAGE (V)
LINOPT VOLTAGE (V)
55881 G38
GAIN (dB)
55881 G39
LO Feedthrough Distribution at
2140MHz
Image Rejection Distribution at
2140MHz
Output IP3 Distribution at 2140MHz
30
20
10
0
30
20
10
0
40
30
20
10
0
85°C
25°C
–40°C
NOTE 12
85°C
25°C
–40°C
85°C
25°C
–40°C
30.4
31.2
32
32.8
33.6
34.4
–44 –43 –42 –41 –40 –39 –38 –37
–44 –43 –42 –41 –40 –39 –38 –37
55881 G40
OIP3 (dBm)
LO FEEDTHROUGH (dBm)
IMAGE REJECTION (dBc)
55881 G41
55881 G41
Output Noise Floor vs RF Output
Power and LOM Port Input Power
(fLO = 2140MHz)
Output Noise Floor vs RF Output
Power and Differential LO Input
Power (fLO = 2140MHz)
Output Noise Floor Distribution at
2140MHz
60
50
40
30
20
10
0
–135
–140
–145
–150
–155
–160
–135
–140
–145
–150
–155
–160
85°C
25°C
–40°C
–10dBm
–5dBm
0dBm
f
BB
= 2kHz, CW (NOTE 3)
–10dBm LO BALUN =
–5dBm
0dBm
5dBm
USING BD1631J50100A
= 2kHz, CW (NOTE 3)
f
BB
5dBm
10dBm
15dBm
10dBm
15dBm
20dBm
–161.2
–160.8
–160.4
–160.0
–159.6
–15
–10
–5
0
5
10
–15
–10
–5
0
5
10
NOISE FLOOR (dBm/Hz)
55881 G43
55881 G44
55881 G45
RF OUTPUT POWER (dBm)
RF OUTPUT POWER (dBm)
55881fb
10
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
Output
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
Output Noise Floor vs RF
Frequency (No AC Baseband Input
Signal, PLOM = 0dBm)
Output Noise Floor vs RF
Frequency (No AC Baseband Input
Signal, PLOM = 10dBm)
Return Loss vs Frequency
0
–5
–156
–158
–160
–162
–164
–166
–168
–170
–156
–158
–160
–162
–164
–166
–168
–170
LOM PORT, EN = HIGH
LOP PORT, EN = HIGH
RF PORT, EN = HIGH
RF PORT, EN = LOW
NOTE 3
NOTE 3
–10
–15
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
LO PORT WITH
–20
–25
BD1631J50100A00
LOM PORT, EN = LOW
LOP PORT, EN = LOW
0
2
3
4
5
6
0
3
4
5
6
1
0
1
3
4
5
6
1
2
2
FREQUENCY (GHz)
55881 G46
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
55881 G48
55881 G47
LO Feedthrough to RF Output vs
LO Frequency After Nulling at 25°C
(PLOM = 0dBm)
LO Feedthrough to RF Output vs
LO Frequency After Nulling at 25°C
(PLOM = 10dBm)
Image Rejection vs LO Frequency
After Nulling at 25°C
(PLOM = 0dBm)
–40
–50
–60
–70
–80
–90
–40
–50
–60
–70
–80
–90
–40
–50
–60
–70
–80
–90
5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.45V, 25°C
3.3V, –40°C
3.15V, 25°C 5 PARTS SHOWN
3.15V, 25°C 5 PARTS SHOWN
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
55881 G50
55881 G49
55881 G51
Image Rejection vs LO Frequency
After Nulling at 25°C
(PLOM = 10dBm)
LO Feedthrough to RF Output vs
LO Frequency (PLOM = –10dBm)
–40
–50
–60
–70
–80
–90
–20
–30
–40
–50
3.3V, 85°C
3.3V, 25°C
3.45V, 25°C
3.3V, –40°C
3.15V, 25°C 5 PARTS SHOWN
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–60
0
1
2
3
4
0
1
2
3
4
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
55881 G51
55881 G53
55881fb
11
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
LO Feedthrough to RF Output vs
LO Frequency (PLOM = –5dBm)
LO Feedthrough to RF Output vs
LO Frequency (PLOM = 5dBm)
LO Feedthrough to RF Output vs
LO Frequency (PLOM = 10dBm)
–20
–30
–40
–50
–20
–30
–40
–50
–20
–30
–40
–50
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–60
–60
–60
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
55881 G54
LO FREQUENCY (GHz)
55881 G56
55881 G55
LO Feedthrough to RF Output vs
LO Frequency (PLOM = 15dBm)
Image Rejection vs LO Frequency
(PLOM = –10dBm)
Image Rejection vs LO Frequency
(PLOM = –5dBm)
–20
–30
–40
–50
–20
–30
–40
–50
–20
–30
–40
–50
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–60
–60
–60
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
LO FREQUENCY (GHz)
55881 G57
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
55881 G58
55881 G59
Image Rejection vs LO Frequency
(PLOM = 5dBm)
Image Rejection vs LO Frequency
(PLOM = 10dBm)
–20
–30
–40
–50
–20
–30
–40
–50
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–60
–60
0
1
2
3
4
0
1
2
3
4
LO FREQUENCY (GHz)
55881 G61
LO FREQUENCY (GHz)
55881 G60
55881fb
12
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
Output IP3 vs RF Frequency
(PLOM = 0dBm, fIM3 = fLO
14.5MHz)
+
Output IP2 vs RF Frequency
(PLOM = 0dBm, fIM2 = fLO + 10MHz)
Image Rejection vs LO Frequency
(PLOM = 15dBm)
–20
–30
–40
–50
40
30
20
10
90
80
70
60
50
40
30
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–60
0
0
1
2
3
4
0
1
2
3
4
5
6
0
1
2
3
4
5
6
LO FREQUENCY (GHz)
55881 G62
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
55881 G64
55881 G63
Output IP2 vs RF Frequency
Output IM3 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 900MHz,
Note 6)
Output IP3 vs RF Frequency
(PLOM = 10dBm, fIM2 = fLO
10MHz)
+
(PLOM = 10dBm, fIM3 = fLO
14.5MHz)
+
–20
–30
40
30
20
10
90
80
70
60
50
40
30
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–40
–50
–60
–70
–80
–90
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
0
–5
0
10
–10
5
0
1
2
3
4
5
6
0
1
2
3
4
5
6
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
55881 G66
55881 G65
RF POWER PER TONE (dBm) 55881 G67
Output IM2 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 900MHz,
fIM2 = 890MHz)
Output IM3 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 900MHz,
fIM3 = 914.5MHz)
–20
–30
–20
–30
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–40
–50
–60
–70
–80
–90
–40
–50
–60
–70
–80
–90
–5
0
10
–5
0
10
–10
5
–10
5
RF POWER PER TONE (dBm)
RF POWER PER TONE (dBm) 55881 G69
55881 G68
55881fb
13
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
Output IM2 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 900MHz,
fIM2 = 910MHz)
Output IM3 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 2140MHz,
Note 6)
Output IM2 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 2140MHz,
fIM2 = 2130MHz)
–20
–30
–20
–30
–20
–30
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–40
–50
–60
–70
–80
–90
–40
–50
–60
–70
–80
–90
–40
–50
–60
–70
–80
–90
–5
0
10
–5
0
10
–10
–5
0
10
–10
5
–10
5
–15
5
55881 G72
RF POWER PER TONE (dBm)
RF POWER PER TONE (dBm) 55881 G71
RF POWER PER TONE (dBm)
55881 G70
Output IM3 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 2140MHz,
fIM3 = 2154.5MHz)
Output IM2 vs RF 2-Tone Power
(PLOM = 0dBm, fRF = 2140MHz,
fIM2 = 2150MHz)
Supply Current vs LINOPT Voltage
320
310
300
290
280
–20
–30
–20
–30
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–40
–50
–60
–70
–80
–90
–40
–50
–60
–70
–80
–90
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.0
3.5
–5
0
10
2.0
–10
5
2.5
–10
–5
0
10
–15
5
55881 G75
LINOPT VOLTAGE (V)
RF POWER PER TONE (dBm) 55881 G73
RF POWER PER TONE (dBm) 55881 G74
OutputIP2vsRFFrequencyforHigh
SideLOInjection(fBB1 =140MHz,
fBB2 =141MHz,PLOM =0dBm
LINOPT Current vs LINOPT Voltage
10
5
90
80
70
60
50
40
30
f
f
= f + f
IM2 RF BB2
LO RF BB1
= f – f
0
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–5
3.0
2.5
LINOPT VOLTAGE (V)
3.5
55881 G76
0
2
1
3
4
5
6
2.0
RF FREQUENCY (GHz)
55881 G77
55881fb
14
LTC5588-1
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 3.3V, EN = 3.3V, TA = 25°C, LOP input
AC-terminated with 50Ω to ground, BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, and 1VP-P(DIFF), baseband input frequencies = 4.5MHz
and 5.5MHz for OIP3 and OIP2, or else baseband input frequency = 100kHz, I and Q 90° shifted, lower sideband selection, LINOPT pin
floating, unless otherwise noted. Test circuit is shown in Figure 8.
OutputIP2vsRFFrequencyforHigh
SideLOInjection(fBB1 =140MHz,
fBB2 =141MHz,PLOM =10dBm
OutputIP2vsRFFrequencyforLow
SideLOInjection(fBB1 =140MHz,
fBB2 =141MHz,PLOM =0dBm
OutputIP2vsRFFrequencyforLow
SideLOInjection(fBB1 =140MHz,
fBB2 =141MHz,PLOM =10dBm
90
80
70
60
50
40
30
90
80
70
60
50
40
30
90
80
70
60
50
40
30
f
f
= f + f
IM2 RF BB2
f
f
= f – f
IM2 RF BB2
f
f
= f – f
LO RF BB1
= f + f
IM2 RF BB2
LO RF BB1
LO RF BB1
= f – f
= f + f
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
0
2
3
4
5
6
0
2
3
4
5
6
0
2
3
4
5
6
1
1
1
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
55881 G78
55881 G79
55881 G80
GNDRFtoGNDThermistorDC
ResistancevsTemperature
(IGNDRF(DC) =100μA)
GNDRFtoGNDThermistorDC
ResistancevsTemperature
(IGNDRF(DC) =200μA)
3.0
2.5
3.0
V
> V
V
> V
GNDRF GND
GNDRF
GND
2.5
2.0
1.5
2.0
1.5
1.0
0.5
0
1.0
0.5
0
V
CC
V
CC
V
CC
V
CC
= 3.45V
= 3.3V
= 3.15V
= 0V
V
CC
V
CC
V
CC
V
CC
= 3.45V
= 3.3V
= 3.15V
= 0V
–40
0
40
80
120
–40
0
40
80
120
TEMPERATURE (°C)
TEMPERATURE (°C)
55881 G81
55881 G82
55881fb
15
LTC5588-1
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the enable pin voltage is
higher than 2V, the IC is on. When the input voltage is less
than 1V, the IC is off.
LINOPT (Pin 7): Linearity Optimization Input. An external
voltage can be applied to this pin to optimize the linearity
(OIP3)underaspecificapplicationcondition. Itsoptimum
voltagedependsontheLOfrequency,temperature,supply
voltage, baseband frequency and signal bandwidth. The
typical input voltage range is from 2V to 3.7V. The pin can
be left floating for good overall linearity performance.
GND (Pins 2, 5, 8, 11, 12, 14, 17, 19, 20, 23, Exposed
Pad Pins 25 and 26): Ground. Pins 2, 5, 8, 11, 20, 23
and exposed pad Pin 25 (group 1) are connected together
internallywhilePins12,14,17,19andexposedpadPin 26
(group 2) are tied together and serve as the ground return
for the RF balun. For best overall performance all ground
pins should be connected to RF ground. For best OIP2
performance it is recommended to connect group 1 and
group 2 only at second and lower level ground layers
of the PCB, not the top layer. A thermistor (temperature
BBMQ,BBPQ(Pins9,10):BasebandInputsoftheQChan-
nel. The input impedance of each input is about –3kΩ. It
should be externally biased to a 0.5V common mode level.
Do not apply common mode voltage beyond 0.55V .
DC
RF (Pin 16): RF Output. The RF output is a DC-coupled
single-ended output with 50Ω output impedance at RF
frequencies.AnAC-couplingcapacitorof6.2pF(C7),should
be used at this pin for 0.7GHz to 3.5GHz operation.
variable resistor) of 1.4kΩ at 25°C and V = 3.3V with
CC
temperature coefficient of 11Ω/°C is connected between
group 1 and group 2.
V
,V (Pins24,18):PowerSupply.Itisrecommended
CC1 CC2
LOP (Pin 3): Positive LO Input. An AC-coupling capacitor
(1nF) in series with 50Ω to ground provides the best OIP2
performance.
to use 2 × 1nF and 2 × 4.7μF capacitors for decoupling to
ground on these pins.
BBPI, BBMI (Pins 21, 22): Baseband Inputs of the
I Channel. The input impedance of each input is about
–3kΩ. It should be externally biased to a 0.5V common
mode level. Do not apply common mode voltage beyond
LOM (Pin 4): Negative LO Input. An AC-coupled 50Ω LO
signal source can be applied to this pin.
NC (Pins 6, 13, 15): No Electrical Connection.
0.55V .
DC
BLOCK DIAGRAM
V
V
GND
23
NC
CC1 CC2
20
25
24
18
13
15
BBPI 21
BBMI 22
VqI
I CHANNEL
16 RF
0°
90°
GND
BBPQ 10
1
EN
VqI
Q CHANNEL
BBMQ
9
2
5
8
11
3
4
6
7
12 14 17 19 26
GND
LOP LOM NC LINOPT
GNDRF
55881 BD
55881fb
16
LTC5588-1
APPLICATIONS INFORMATION
The LTC5588-1 consists of I and Q input differential volt-
age-to-current converters, I and Q upconverting mixers,
an RF output balun, an LO quadrature phase generator
and LO buffers.
recommended. Note that the frequency of the best match
issetlowerthanthebandcenterfrequencytocompensate
the gain roll-off of the on-chip RF output balun at lower
frequency. At 240MHz and 450MHz operations, the image
rejection and the large-signal noise performance is better
using higher LO drive levels. However, if the drive level
causes internal clipping, the LO leakage degrades. Using
a balun such as Anaren P/N B0310J50100A00 increases
the LO drive level without internal clipping and provides
a relatively broadband LO port impedance match.
External I and Q baseband signals are applied to the dif-
ferential baseband input pins, BBPI, BBMI and BBPQ,
BBMQ.Thesevoltagesignalsareconvertedtocurrentsand
translated to RF frequency by means of double-balanced
upconverting mixers. The mixer outputs are combined at
the inputs of the RF output balun, which also transforms
the output impedance to 50Ω. The center frequency of
the resulting RF signal is equal to the LO signal frequency.
The LO input drives a phase shifter which splits the LO
signal into in-phase and quadrature signals. These LO
signals are then applied to on-chip buffers which drive the
upconverting mixers. In most applications, the LOM input
is driven by the LO source via a 1nF coupling capacitor,
while the LOP input is terminated with 50Ω to RF ground
via a 1nF coupling capacitor. The RF output is single ended
and internally 50Ω matched across a wide RF frequency
range from 700MHz to 5GHz with better than 10dB return
loss using C7 = 6.8pF and C8 = 0.2pF (S22 < –10dB). See
Figure 8.
Baseband Interface
The baseband inputs (BBPI, BBMI, BBPQ, BBMQ) present
a single-ended input impedance of about –3kΩ. Because
ofthenegativeinputimpedance, itisimportanttokeepthe
sourceresistanceateachbasebandinputlowenoughsuch
that the total input impedance remains positive across the
basebandfrequency. Eachofthefourbasebandinputshas
a capacitor of 4pF in series with 14Ω connected to ground
and a PNP emitter follower in parallel (see Figure 1). The
basebandbandwidthdependsonthesourceimpedance.For
a 25Ω source impedance (50Ω terminated with 50Ω), the
baseband bandwidth (–1dB) is about 430MHz. If a 2.7nH
series inductor is inserted at each of the four baseband
inputs, the –1dB baseband bandwidth can be increased
to about 650MHz.
For 240MHz operation, C7 = 4.7nH and C8 = 33pF is rec-
ommended. For 450MHz, C7 = 2.7nH and C8 = 10pF is
LTC5588-1
RF
V
V
= 3.3V
= 3.3V
CC2
BALUN
CC1
FROM
Q CHANNEL
LOMI
LOPI
GNDRF
BBPI
14Ω
4pF
V
= 0.5V
CM
4pF
14Ω
BBMI
55881 F01
GND
Figure 1. Simplified Circuit Schematic of the LTC5588-1 (Only I Channel is Shown)
55881fb
17
LTC5588-1
APPLICATIONS INFORMATION
It is recommended to compensate the baseband input
impedance in the baseband lowpass filter design in order
to achieve best gain flatness vs baseband frequency. The
S-parameters for (each of) the baseband inputs is given
in Table 1.
The circuit is optimized for a common mode voltage of
0.5V which should be externally applied. The baseband
pins should not be left floating to cause the internal PNP’s
base current to pull the common mode voltage higher
than the 0.55V limit, generating excessive current flow. If
it occurs for an extended period, damage to the IC may
result. In shutdown mode it is recommended to terminate
to ground or to a 0.5V source with a value lower than
200Ω. The PNP’s base current is about –136μA ranging
from –250μA to –50μA.
Table 1. Single-Ended BB Input Impedance vs Frequency for
EN = High and VDC = 0.5V
REFLECTION COEFFICIENT
FREQUENCY
(MHz)
BB INPUT
IMPEDANCE
MAG
1.03
1.03
1.03
1.03
1.03
1.03
1.03
1.03
1.04
1.03
1.02
1.01
0.99
0.96
0.94
0.90
0.87
0.82
0.77
0.74
0.71
0.69
ANGLE
–0.13
–0.13
–0.37
–0.68
–1.38
–2.79
–5.3
0.1
1
–3700
–3900-j340
–3700-j950
–3200-j1500
–2100-j1900
–860-j1600
–300-j990
–87-j520
–35-j308
–16-j226
–6-j154
It is recommended to drive the baseband inputs differen-
tiallytoreduceeven-orderdistortionproducts.WhenaDAC
is used as the signal source, a reconstruction filter should
be placed between the DAC output and the LTC5588-1
baseband inputs to avoid aliasing.
2
4
8
16
30
Figure 2 shows a typical baseband interface for zero-IF
repeater application. A 5th-order lowpass ladder filter is
used with –0.3dB cut-off of 60MHz. C1A, C1B, C3A and
C3B are configured in a single-ended fashion in order to
suppress common mode noise. L3A and L3B (0402 size)
are used to compensate for passband droop due to the
finite quality factor of the inductors L1A, L1B, L2A and
L2B (0603 size). R3A and R3B improves the out-of-band
noise performance. R3A = R3B = 0Ω (L3A and L3B omit-
ted) provides best out-of-band noise performance but no
passband droop compensation. In that case, L1A, L1B,
L2A and L2B may have to be increased in size (higher
quality factor) to limit passband droop.
60
–10.6
–18.2
–24.8
–36
100
140
200
250
300
350
400
450
500
600
700
800
900
1000
–1.4-j120
1.4-j102
4.4-j87
–45
–52
–59
5.4-j74
–67
7-j66
–73
8.3-j58
–80
9.4-j47
–92
10-j38
–102
–113
–122
–129
10-j32
10.5-j27
10.5-j23
L1A
250nH
L2A
250nH
L3A
100nH
0.5V
DC
10mA 10mA
BBPI
R3A
71.57
R1A
R2A
C1A
C3A
71.57
1657
47pF
47pF
R2C
2497
C2
DAC
R3B
71.57
39pF
C1B
47pF
L1B
250nH
C3B
47pF
R2B
1657
R1B
71.57
L2B
250nH
L3B
100nH
BBMI
10mA 10mA
55881 F02
0.5V
DC
GND
Figure 2: Baseband Interface with 5th-Order Filter and 0.5VCM DAC (Only I Channel is Shown)
55881fb
18
LTC5588-1
APPLICATIONS INFORMATION
At each baseband pin, a 0.146V to 0.854V swing is de-
veloped corresponding to a DAC output current of 0mA
to 20mA. A 3dB lower gain can be achieved using R1A =
R1B = 49.9Ω; R2A = R2B = Open; R2C = 100Ω; R3A =
R3B = 51Ω; L1A = L1B = L2A = L2B = 180nH; C1A = C1B
= C3A = C3B = 68pF; C2 = 56pF.
ferential LO drive (using BD1631J50100A00) with a LO
power below 10dBm. The balun (U2) can be installed
by removing C5 and C6 (see Figure 8). Using Anaren
P/N B0310J50100A00 improves image, LO leakage and
large-signal noise performance at 240MHz and 450MHz.
For this particular balun, an external blocking capacitor
is required.
LO Section
Figure 4 shows the return loss vs RF frequency for the
240MHz and 450MHz frequency bands. Figure 5 shows
the corresponding gain vs RF frequency where the gain
curve peaks at a higher frequency compared to the fre-
quency with best match. Note that the overall bandwidth
degrades tuning the matching frequency lower. A similar
technique can be used for 700MHz and 900MHz if gain
flatness is important.
The internal LO chain consists of a quadrature phase
shifter followed by LO buffers. The LOM input can be
driven single ended with 50Ω input impedance, while the
LOP input should be terminated with 50Ω through a DC
blocking capacitor.
The LOP and LOM inputs can also be driven differentially
when an exceptionally low large-signal output noise floor
is required.
Table 2. LOM Port Input Impedance vs Frequency for EN = High
and PLOM = 0dBm (LOP Terminated with 50Ω AC to Ground)
A simplified circuit schematic for the LOP and LOM inputs
is given in Figure 3. Table 2 lists LOM port input imped-
REFLECTION COEFFICIENT
FREQUENCY
(GHz)
LOM INPUT
IMPEDANCE
MAG
0.499
0.462
0.421
0.354
0.296
0.256
0.225
0.203
0.188
0.18
ANGLE
–29.8
–34.3
–38.8
–45.8
–52.4
–58.4
–64.9
–72.5
–79.6
–86.9
–101
–111
–118
–123
–128
–146
–171
176
ance vs frequency at EN = High and P
= 0dBm. For EN
LOM
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
98-j65
87-j58
79-j51
69-j40
63-j32
59-j27
55-j24
52-j21
50-j19
48-j18
44-j16
41-j15
39-j14
38-j13
37-j12
36-j7.8
32-j2.4
28+j1.0
25+j2.4
23+j4.1
21+j6.2
19+j7.9
17+j8.7
= Low and P
= 0dBm the input impedance is given in
LOM
Table 3. The LOM port input impedance is shown for EN
= High and Low at P = 10dBm in Table 4 and Table 5,
LOM
respectively. The circuit schematic of the demo board is
shown in Figure 8. A 50Ω termination can be connected
to the LOP port (J1).
The LOM port (J2) can also be terminated with a 50Ω
while the LO power is applied to the LOP (J1) port. In that
case, the image rejection may be degraded. At 2.14GHz,
the large-signal noise figure is about 2dB better for dif-
0.178
0.185
0.194
0.2
V
CC1
0.199
0.189
0.225
0.288
0.35
LOP
LOM
2.35V
+
(3.3V IN
–
SHUTDOWN)
173
55881 F03
0.372
0.417
0.472
0.519
168
162
Figure 3: Simplified Circuit Schematic
for the LOP and LOM inputs
159
157
55881fb
19
LTC5588-1
APPLICATIONS INFORMATION
Table 3. LOM Port Input Impedance vs Frequency for EN = Low
and PLOM = 0dBm (LOP Terminated with 50Ω AC to Ground)
Table 4. LOM Port Input Impedance vs Frequency for EN = High
and PLOM = 10dBm (LOP Terminated with 50Ω AC to Ground)
REFLECTION COEFFICIENT
REFLECTION COEFFICIENT
FREQUENCY
(GHz)
LOM INPUT
IMPEDANCE
FREQUENCY
(GHz)
LOM INPUT
IMPEDANCE
MAG
0.511
0.472
0.43
ANGLE
–31.4
–36.2
–41
MAG
0.494
0.455
0.42
ANGLE
–30.6
–35.1
–40.2
–46.6
–54.1
–59.1
–66.6
–73.1
–80.6
–87.5
–102
–112
–119
–123
–128
–146
–170
176
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
95-j69
84-j61
76-j53
67-j41
61-j33
57-j28
54-j24
51-j21
48-j19
47-j18
43-j16
40-j15
39-j14
38-j13
37-j12
35-j7.6
31-j2.2
27+j1.3
24+j2.9
22+j4.7
21+j7.0
18+j8.7
16+j9.7
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
96-j64
86-j57
77-j51
69-j41
62-j33
58-j28
55-j24
52-j21
50-j19
48-j18
44-j16
41-j15
39-j14
38-j14
37-j12
36-j7.9
32-j2.7
28+j0.8
24+j2.0
23+j3.6
21+j5.9
19+j7.5
16+j8.5
0.36
–48.5
–55.6
–61.9
–68.7
–76.5
–83.6
–90.9
–105
–114
–121
–125
–131
–149
–172
175
0.356
0.3
0.3
0.259
0.228
0.205
0.191
0.183
0.182
0.19
0.258
0.229
0.203
0.192
0.179
0.176
0.185
0.196
0.202
0.201
0.188
0.225
0.292
0.348
0.373
0.42
0.2
0.207
0.205
0.2
0.238
0.303
0.363
0.387
0.427
0.481
0.524
171
172
166
168
160
162
157
0.468
0.518
159
154
157
55881fb
20
LTC5588-1
APPLICATIONS INFORMATION
Table 5. LOM Port Input Impedance vs Frequency for EN = Low
and PLOM = 10dBm (LOP Terminated with 50Ω AC to Ground)
0
–2
REFLECTION COEFFICIENT
FREQUENCY
(GHz)
LOM INPUT
IMPEDANCE
MAG
0.48
ANGLE
–32.1
–36.9
–42
–4
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
92-j61
83-j55
75-j50
66-j39
60-j32
56-j27
53-j23
50-j20
48-j19
46-j17
42-j15
40-j14
38-j14
37-j13
36-j12
35-j7.5
31-j2.2
27+j1.3
24+j2.7
22+j4.4
20+j6.8
18+j8.5
16+j9.5
0.444
0.414
0.345
0.293
0.251
0.225
0.199
0.191
0.18
–6
3.3V, 85°C
3.3V, 25°C
3.15V, 25°C
3.45V, 25°C
3.3V, –40°C
–49.3
–57.4
–63.2
–71.2
–78.8
–86.6
–93.6
–108
–117
–123
–127
–132
–150
–172
175
–8
–10
300
400
500
600
RF FREQUENCY (MHz)
200
55881 F05
Figure 5. Low Band Voltage Gain vs RF Frequency
Using Figure 4 Matching
0.181
0.192
0.205
0.211
0.212
0.202
0.244
0.31
The third harmonic content of the LO can degrade image
rejectionseverely,itisrecommendedtokeepthe3rd-order
harmonic of the LO signal lower than the desirable image
rejectionminus6dB.Althoughthesecondharmoniccontent
of the LO is less sensitive, it can still be significant. The
large-signal noise figure can be improved with higher LO
input power. However, if the LO input power is too large to
cause the internal LO signal clipping in the phase-shifter
section, the image rejection can be degraded rapidly.
This clipping point depends on the supply voltage, LO
frequency,temperatureandsingleendedvsdifferentialLO
drive. At f = 2140MHz, V = 3.3V, T = 25°C and single-
0.363
0.389
0.433
0.479
0.525
171
166
160
157
154
LO
CC
ended LO drive, this clipping point is at about 16.7dBm.
For 3.15V it lowers to 16.1dBm. For differential drive it is
about 21.6dBm.
0
–10
–20
–30
RF PORT, EN = HIGH,
C7 = 4.7nH, C8 = 33pF
RF PORT, EN = LOW,
C7 = 4.7nH, C8 = 33pF
RF PORT, EN = HIGH,
C7 = 2.7nH, C8 = 10pF
RF PORT, EN = LOW,
C7 = 2.7nH, C8 = 10pF
LO PORT, EN = HIGH,
USING B0310J50100A00
LO PORT, EN = LOW,
USING B0310J50100A00
The differential LO port input impedance for EN = High
and P = 10dBm is given in Table 6.
LO
–40
200
400
500
600
300
FREQUENCY (MHz)
55881 F04
Figure 4. RF and LO Port Return Loss vs Frequency for Low Band
Match (See Figure 8)
55881fb
21
LTC5588-1
APPLICATIONS INFORMATION
Table 6: Differential LO Input Impedance vs Frequency for
EN = High and PLO = 10dBm
Table 7: Differential LO Input Impedance vs Frequency for
EN = Low and PLO = 10dBm
LO
REFLECTION COEFFICIENT
LO
REFLECTION COEFFICIENT
DIFFERENTIAL
INPUT
DIFFERENTIAL
INPUT
FREQUENCY
(MHz)
FREQUENCY
(MHz)
IMPEDANCE
MAG
0.247
0.247
0.223
0.215
0.194
0.181
0.184
0.186
0.198
0.198
0.237
0.243
0.262
0.254
0.251
0.199
0.173
0.197
0.275
0.338
0.433
0.515
0.596
ANGLE
–43
IMPEDANCE
MAG
0.243
0.250
0.221
0.215
0.197
0.183
0.186
0.188
0.200
0.199
0.237
0.240
0.259
0.248
0.245
0.191
0.172
0.206
0.293
0.362
0.459
0.538
0.619
ANGLE
–45
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
134-j48
126-j51
119-j46
109-j45
100-j40
97-j36
94-j36
90-j35
84-j34
83-j33
77-j36
76-j37
73-j38
74-j37
74-j35
78-j28
74-j15
67-j2.9
58+j7.3
51+j15
42+j18
34+j20
27+j16
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
131-j48
125-j52
117-j46
107-j45
98-j40
95-j36
92-j35
88-j34
83-j33
82-j32
75-j35
76-j35
72-j36
74-j35
73-j33
77-j25
73-j12
66-j0.2
56+j10
49+j18
39+j21
32+j22
25+j18
–50
–52
–55
–58
–66
–69
–79
–81
–84
–87
–90
–93
–96
–99
–104
–107
–111
–111
–113
–113
–115
–120
–145
–174
168
–107
–110
–114
–113
–115
–115
–118
–125
–152
180
164
158
154
156
153
156
153
160
158
55881fb
22
LTC5588-1
APPLICATIONS INFORMATION
RF Section
The RF port output impedance for EN = Low is given in
Table 9.
After upconversion, the RF outputs of the I and Q mixers
are combined. An on-chip balun performs internal dif-
ferential to single-ended conversion, while transforming
the output signal to 50Ω as shown in Figure 1.
Table 9. RF Output Impedance vs Frequency for EN = Low
REFLECTION COEFFICIENT
FREQUENCY
(MHz)
RF OUTPUT
IMPEDANCE
MAG
ANGLE
Table 8 shows the RF port output impedance vs frequency
for EN = High.
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
1.9
2.0
2.5
3.0
3.2
3.5
4.0
4.5
5.0
5.5
6.0
7.2+j11
8.0+j13
9.0+j16
12+j21
15+j25
19+j29
23+j32
29+j34
35+j35
40+j34
51+j28
57+j18
57+j7.0
53+j0.4
51-j2.4
48-j4.0
38-j4.9
31-j0.7
29+1.0
27+j3.6
24+j5.6
22+j6.9
19+j11
17+j20
15+j28
0.761
0.742
0.720
0.675
0.622
0.571
0.518
0.464
0.414
0.363
0.266
0.175
0.090
0.030
0.025
0.044
0.153
0.240
0.266
0.308
0.365
0.405
0.478
0.563
0.628
155
149
144
133
123
115
107
99
Table 8. RF Output Impedance vs Frequency for EN = High
REFLECTION COEFFICIENT
FREQUENCY
(MHz)
RF OUTPUT
IMPEDANCE
MAG
0.742
0.723
0.702
0.660
0.609
0.560
0.509
0.457
0.409
0.359
0.266
0.180
0.098
0.042
0.032
0.043
0.142
0.227
0.255
0.298
0.365
0.406
0.475
0.541
0.613
ANGLE
154
149
143
133
123
114
106
98
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
1.9
2.0
2.5
3.0
3.2
3.5
4.0
4.5
5.0
5.5
6.0
7.8+j11
8.7+j13
9.7+j16
12+j21
16+j25
19+j29
24+j32
30+j34
35+j35
41+j34
52+j28
58+j18
58+j7.1
55+j0.2
52-j2.7
50-j4.3
39-j5.9
32-j1.9
30-j0.2
27+j2.2
23+j4.5
22+j6.8
19+j11
17+j20
15+j27
92
86
72
60
43
91
7.0
85
–74
–111
–155
–177
–177
169
164
161
151
132
118
70
57
39
3.4
–52
–92
–149
–173
–180
172
167
161
151
133
120
55881fb
23
LTC5588-1
APPLICATIONS INFORMATION
Linearity Optimization
For zero-IF systems the spectral regrowth is typically
limited by the OIP2 performance. In that case, optimiz-
ing the LINOPT pin voltage may not improve the spectral
regrowth. The spectral regrowth for systems with an IF
(forexample140MHz)willbesetbytheOIP3performance
and optimizing LINOPT voltage can improve the spectral
regrowth significantly (see Figure 13).
The LINOPT pin (Pin 7) can be used to optimize the lin-
earity of the RF circuitry. Figure 6 shows the simplified
schematic of the LINOPT pin interface. The nominal DC
bias voltage of the LINOPT pin is 2.56V and the typical
voltage window to drive the LINOPT pin for optimum
linearity is 2V to 3.7V. Since its input impedance for EN =
High is about 150Ω, an external buffer may be required to
output a current in the range of –2mA to 8mA. The LINOPT
voltageforoptimumlinearityisafunctionofLOfrequency,
temperature, supply voltage, baseband frequency, high
side or low side LO injection, process, signal bandwidth
and RF output level.
Enable Interface
Figure 7 shows a simplified schematic of the EN pin in-
terface. The voltage necessary to turn on the LTC5588-1
is 2V. To disable (shut down) the chip, the enable voltage
must be below 1V. If the EN pin is not connected, the chip
is enabled. This EN = High condition is assured by the
100k on-chip pull-up resistor.
V
CC1
100Ω
75Ω
250Ω
LINOPT
INTERNAL
ENABLE SIGNAL
55881 F06
Figure 6. LINOPT Pin Interface
V
CC1
100k
INTERNAL
ENABLE
CIRCUIT
EN
55881 F07
Figure 7. EN Pin Interface
55881fb
24
LTC5588-1
APPLICATIONS INFORMATION
Evaluation Board
voltage drop over R1 and R2 is about 0.15V. The supply
voltages applied directly to the chip can be monitored
by measuring at the test points TP1 and TP2. If a power
supply is used that ramps up slower than 7V/μs and limits
the overshoot on the supply below 3.8V, R1 and R2 can be
omitted. To facilitate turn-on and turn-off time measure-
ments, the microstrip between J5 and J7 can be used
connecting J5 to a pulse generator, J7 to an oscilloscope
with 50Ω input impedance, removing R5 and inserting a
0Ω resistor for R3.
Figure 8 shows the evaluation board schematic. A good
ground connection is required for the exposed pad. If this
is not done properly, the RF performance will degrade.
Additionally, theexposedpadprovidesheatsinkingforthe
part and minimizes the possibility of the chip overheat-
ing. Resistors R1 and R2 reduce the charging current in
capacitors C1 and C2 (see Figure 8) and will reduce supply
ringing during a fast power supply ramp-up with induc-
tive wiring connecting V and GND. For EN = High, the
CC
J9
BBMI
J8
BBPI
R6
OPT
C12
C11
R11
OPT
R10
OPT
OPT
OPT
J7
EN
R4
OPT
TP1
EN
V
CC
C1
4.7μF
C3
1nF
R1
J5
1Ω
R2
1.3Ω
EN
R5
0Ω
R3
OPT
TP2
C4
1nF
C2
4.7μF
24 23 22 21 20 19
C5
J1
LOP
1nF
1
18
17
16
15
14
13
EN
V
CC2
C7
6.8pF
J6
RF OUT
2
3
4
5
6
6
5
4
GND
LOP
LOM
GND
NC
GNDRF
RF
NC GND BP
BALUN
U2
OPT
U1
LTC5588-1
C8
0.2pF
UNBP GND BP
NC
1
2
3
GNDRF
NC
C14
1nF
J2
LOM
R12
OPT
C6
1nF
LINOPT
R14
1Ω
25
7
8
9
10 11 12
26
BOARD NUMBER: DC1524A
GND
C13
100nF
R13
OPT
J3
BBMQ
J4
BBPQ
C9
OPT
C10
OPT
R8
OPT
R9
OPT
R7
OPT
55881 F08
Figure 8. Evaluation Circuit Schematic
55881fb
25
LTC5588-1
APPLICATIONS INFORMATION
Figures 9 and 10 show the component side and the bot-
tom side of the evaluation board. An enlarged view of the
component side around the IC placement shows all pins
related to GND (group 1) and all pins related to GNDRF
(group 2) are not connected via the top layer of the com-
ponent side in Figure 11. It is possible to use the part
without a split-paddle PCB island, but this may degrade
OIP2 by a few dB at some frequencies and reduce LO
leakage slightly.
Due to self heating, the board temperature on the bottom
side underneath the exposed die paddle for EN = high
and V = 3.3V is –29.5°C at –40°C, 37.8°C at 25°C and
CC
98.1°C at 85°C ambient temperatures.
Theon-chiptemperaturecanbeobtainedusingthebuilt-in
thermistor. The on-chip thermistor is internally connected
between GNDRF and GND, requiring AC grounding Pins
12, 14, 17, 19 and the exposed pad pin 26. The thermistor
is 1.4kΩ at 25°C and V = 3.3V, and has a temperature
CC
coefficient of 11Ω/°C. Switching from EN = Low to EN
= High causes a 1.5mV DC voltage increase on the (AC
grounded) GNDRF due to the internal IR drop.
Figure 10. Bottom Side of Evaluation Board
Figure 11. Enlarged View of the Component Side
of the Evaluation Board
Figure 9. Component Side of Evaluation Board
55881fb
26
LTC5588-1
APPLICATIONS INFORMATION
The LTC5588-1 is recommended for basestation applica-
tions using various modulation formats. Figure 14 shows
a typical application. The LTC2630 can be used to drive
the LINOPT pin via a SPI interface. At 3.3V supply, the
maximum LINOPT voltage is about 3.125V. Using an extra
buffer like the LTC6246 in unity-gain configuration can
increase the maximum LINOPT voltage to about 3.17V.
An LTC2630 with a 5V supply can drive the full 2V to 3.7V
range for the LINOPT pin.
Figure12showstheACPR,AltCPRandACPR,AltCPRwith
OptimizedLINOPTvoltagevsRFOutputPowerat2.14GHz
for W-CDMA 1, 2 and 4 Carriers. A 4-Carriers W-CDMA
spectrum is shown in Figure 13 with and without LINOPT
voltage optimization.
–40
ACPR
4C
2C
ACPR (OPT)
1C
AltCPR
–50
AltCPR (OPT)
DOWNLINK TEST
MODEL 64 DPCH
–60
f
BB
f
LO
= 140MHz,
= 2280MHz
–70
–80
–90
–20
–15
–10
–5
0
5
55881 TA
RF OUTPUT POWER PER CARRIER (dBm)
Figure 12. ACPR, AltCPR and ACPR, AltCPR with Optimized LINOPT
Voltage vs RF Output Power at 2.14GHz for W-CDMA 1, 2 and 4 Carriers
–20
DOWNLINK TEST MODEL 64 DPCH
–40
–60
–80
f
f
= 140MHz
BB
LO
–100
–120
= 2280MHz
OPTIMIZED
NOT OPTIMIZED
2.115
2.125
2.135
2.145
2.155
2.165
RF FREQUENCY (GHz)
55881 F13
Figure 13. 4-Carrier W-CDMA Spectrum with and without LINOPT
Voltage Optimization
55881fb
27
LTC5588-1
PACKAGE DESCRIPTION
PF Package
Variation: PF24MA
24-Lead Plastic UTQFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1834 Rev Ø)
2.50 REF
0.70 p 0.05
0.41
p 0.05
0.41 p 0.05
2.45 p 0.05
4.50 p 0.05
3.10 p 0.05
1.24 p0.05
0.41
p 0.05
PACKAGE OUTLINE
0.25 p 0.05
0.50 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
PIN 1 NOTCH
R = 0.20 TYP
OR 0.25 s 45o
CHAMFER
BOTTOM VIEW—EXPOSED PAD
2.50 REF
0.55 p 0.05
R = 0.05
TYP
4.00 p 0.10
23
24
PIN 1
TOP MARK
(NOTE 6)
0.40 p 0.10
1
2
4.00 p 0.10
2.45 p 0.10
1.24 p 0.10
0.41 p 0.10
0.41
R = 0.125
TYP
p 0.10
(PF24MA) UTQFN 0908 REV Ø
0.125 REF
0.25 p 0.05
0.50 BSC
0.00 – 0.05
0.41 p 0.10
NOTE:
1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE, IF PRESENT
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
55881fb
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
28
LTC5588-1
REVISION HISTORY
REV
DATE
DESCRIPTION
PAGE NUMBER
A
2/11
Updated Features and Description sections
1
Add θ value to Pin Configuration
Additional information added to Electrical Characteristics section
Added Typical Performance Characteristics curves
2
5
JC
14, 15
17, 26
5
Revised Applications Information to replace Figure 1 and text.
Added Note 14 to Electrical Characteristics section.
B
3/11
55881fb
29
LTC5588-1
TYPICAL APPLICATION
3.3V
24
18
1nF + 4.7μF
s2
V
LTC5588-1
RF = 200MHz
TO 6000MHz
21
22
CC
I-DAC
VmI
I-CHANNEL
6.8pF
PA
1
0o
12,14,17,
19, 26
EN
0.2pF
90o
Q-CHANNEL
10
9
Q-DAC
VmI
3.3V
4
LINOPT
7
1
2
3
LD
SCK
SDI
BASEBAND
GENERATOR
3
4
2, 5, 8, 11, 20
23, 25
6
DAC
LTC2630
1nF
50Ω
1nF
5
VCO/SYNTHESIZER
55881 F14
Figure 14. 200MHz to 6000MHz Direct Conversion Transmitter Application
RELATED PARTS
PART NUMBER
Infrastructure
LT®5518
DESCRIPTION
COMMENTS
1.5GHz to 2.4GHz High Linearity Direct Quadrature
Modulator
22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 3kΩ 2.1V
Baseband Interface, 5V/128mA Supply
DC
LT5528
LT5558
LT5568
LT5571
LT5572
LTC5598
1.5GHz to 2.4GHz High Linearity Direct Quadrature
Modulator
21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω 0.5V
Baseband Interface, 5V/128mA Supply
DC
600MHz to 1100MHz High Linearity Direct Quadrature
Modulator
22.4dBm OIP3 at 900MHz, –158dBm/Hz Noise Floor, 3kΩ 2.1V
Baseband Interface, 5V/108mA Supply
DC
700MHz to 1050MHz High Linearity Direct Quadrature
Modulator
22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω 0.5V
Baseband Interface, 5V/117mA Supply
DC
620MHz to 1100MHz High Linearity Direct Quadrature
Modulator
21.7dBm OIP3 at 900MHz, –159dBm/Hz Noise Floor, Hi-Z 0.5V
Baseband Interface, 5V/97mA Supply
DC
1.5GHz to 2.5GHz High Linearity Direct Quadrature
Modulator
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, Hi-Z 0.5V
Baseband Interface, 5V/120mA Supply
DC
5MHz to 1600MHz High Linearity Direct Quadrature
Modulator
27.7dBm OIP3 at 140MHz, –160dBm/Hz Noise Floor with P
= 5dBm
OUT
LTC5540/LTC5541/ 600MHz to 4GHz High Linearity Downconverting Mixers
LTC5542/LTC5543
IIP3 = 26.4dBm, 8dB Conversion Gain, <10dB NF, 3.3V/190mA Supply
Current
LT5527
400MHz to 3.7GHz, 5V Downconverting Mixer
2.3dB Gain, 23.5dBm IIP3, 12.5dB NF at 1900MHz, 5V/78mA Supply
Current
LT5557
400MHz to 3.7GHz, 3.3V Downconverting Mixer
2.9dB Gain, 24.7dBm IIP3, 11.7dB NF at 1950MHz, 3.3V/82mA Supply
Current
RF Power Detector
LT5581
6GHz Low Power RMS Detector
40dB Dynamic Range, 1dB Accuracy Over Temperature, 1.5mA Supply
Current
LTC5582
40MHz to 10GHz RMS Power Detector
57dB Dynamic Range, 1dB Accuracy Over Temperature, Single-Ended
RF Input (No Transformer)
55881fb
LT 0311 REV B • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
30
●
●
© LINEAR TECHNOLOGY CORPORATION 2010
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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