LT5557EUF#TRPBF [Linear]
LT5557 - 400MHz to 3.8GHz 3.3V Active Downconverting Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C;
| 型号： | LT5557EUF#TRPBF |
| 厂家： | 
Linear |
| 描述： | LT5557 - 400MHz to 3.8GHz 3.3V Active Downconverting Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C |
| 文件： | 总20页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Electrical Specifications Subject to Change
LTC5590
Dual 600MHz to 1.7GHz
High Dynamic Range
Downconverting Mixer
FeaTures
DescripTion
The LTC®5590 is part of a family of dual-channel high dy-
namic range, high gain downconverting mixers covering
the 600MHz to 4GHz RF frequency range. The LTC5590
is optimized for 600MHz to 1.7GHz RF applications. The
LO frequency must fall within the 700MHz to 1.5GHz
range for optimum performance. A typical application
is a LTE or GSM receiver with a 700MHz to 915MHz RF
input and high side LO.
n
Conversion Gain: 8.7dB at 900MHz
n
IIP3: 26dBm at 900MHz
n
Noise Figure: 9.7dB at 900MHz
n
15.6dB NF Under 5dBm Blocking
n
High Input P1dB; 14.1dBm at 5V
n
53dB Channel-to-Channel Isolation
n
1.25W Power Consumption at 3.3V
n
Low Current Mode for <800mW Consumption
n
Enable Pins for Each Channel
The LTC5590’s high conversion gain and high dynamic
range enable the use of lossy IF filters in high selectivity
receiver designs, while minimizing the total solution cost,
board space and system-level variation. A low current
mode is provided for additional power savings and each
of the mixer channels has independent shutdown control.
n
50Ω Single-Ended RF and LO Inputs
n
LO Input Matched In All Modes
n
0dBm LO Drive Level
n
Small Package and Solution Size
n
–40°C to 105°C Operation
applicaTions
High Dynamic Range Dual Downconverting Mixer Family
PART NUMBER
LTC5590
RF RANGE
LO RANGE
n
3G/4G Wireless Infrastructure Diversity Receivers
600MHz to 1.7GHz
1.3GHz to 2.3GHz
1.6GHz to 2.7GHz
2.3GHz to 4GHz
700MHz to 1.5GHz
1.4GHz to 2.1GHz
1.7GHz to 2.5GHz
2.4GHz to 3.6GHz
(LTE, CDMA, GSM)
LTC5591
n
MIMO Infrastructure Receivers
LTC5592
n
High Dynamic Range Downmixer Applications
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
LTC5593
Technology Corporation. All other trademarks are the property of their respective owners.
Typical applicaTion
Wideband Receiver
Wideband Conversion Gain
NF and IIP3 vs IF Frequency
(Mixer Only, Measured on
Evaluation Board)
190MHz
SAW
190MHz
BPF
1nF
V
IF
CCIF
1nF
150nH
ADC
AMP
3.3V or 5V
200mA
150nH
22pF
1µF
27
26
25
24
23
22
21
20
19
13
12
11
10
9
V
3.3V
CC
IIP3
22pF
1µF
180mA
V
+
–
IFA
CCA
IFA
IF
AMP
IMAGE
BIAS
ENA
LO
ENA
(0V/3.3V)
BPF 100pF
NF
RF
RFA
700MHz TO
915MHz
LNA
LNA
LO
LO 1090MHz
10pF
AMP
G
C
8
SYNTH
IMAGE
BPF 100pF
7
T
= 25°C
C
LO
LO = 1090MHz
AMP
RF
700MHz TO
915MHz
RFB
6
RF = 900 30MHz
TEST CIRCUIT IN FIGURE 1
ENB
ENB
(0V/3.3V)
5
IF
BIAS
V
160 170
180
190
200
210
220
AMP
+
–
IFB
IF FREQUENCY (MHz)
IFB
CCB
5590 TA01b
V
V
CC
CCIF
22pF
150nH
150nH
1nF
190MHz
SAW
190MHz
BPF
1nF
22pF
IF
AMP
ADC
5590 TA01a
5590p
1
LTC5590
absoluTe MaxiMuM raTings
pin conFiguraTion
(Note 1)
TOP VIEW
Mixer Supply Voltage (V )......................................4.0V
CC
IF Supply Voltage (V
).........................................5.5V
CCIF
Enable Voltage (ENA, ENB) ..............–0.3V to V + 0.3V
CC
24 23 22 21 20 19
Power Select Voltage (I ) .............–0.3V to V + 0.3V
SEL
CC
RFA
CTA
GND
GND
CTB
RFB
1
2
3
4
5
6
18
17
16
I
SEL
LO Input Power (1GHz to 3GHz).............................9dBm
LO Input DC Voltage............................................... 0.1V
RFA, RFB Input Power (1GHz to 3GHz) ................15dBm
RFA, RFB Input DC Voltage.................................... 0.1V
ENA
LO
25
GND
15 GND
ENB
14
13 GND
Operating Temperature Range (T )........ –40°C to 105°C
C
7
8
9 10 11 12
Storage Temperature Range .................. –65°C to 150°C
Junction Temperature (T ) .................................... 150°C
J
UH PACKAGE
24-LEAD (5mm × 5mm) PLASTIC QFN
= 150°C, θ = 7°C/W
T
JMAX
JC
EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB
orDer inForMaTion
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
24-Lead (5mm × 5mm) Plastic QFN
TEMPERATURE RANGE
–40°C to 105°C
LTC5590IUH#PBF
LTC5590IUH#TRPBF
5590
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
Dc elecTrical characTerisTics
unless otherwise noted. Test circuit shown in Figure 1. (Note 2)
PARAMETER
Power Supply Requirements (V , V , V
CONDITIONS
MIN
TYP
MAX
UNITS
, V
)
CCA CCB CCIFA CCIFB
V
V
, V
Supply Voltage (Pins 12, 19)
3.1
3.1
3.3
3.3
3.5
5.3
V
V
CCA CCB
, V
Supply Voltage (Pins 9, 10, 21, 22)
CCIFA CCIFB
Mixer Supply Current (Pins 12, 19)
IF Amplifier Supply Current (Pins 9, 10, 21, 22)
Total Supply Current (Pins 9, 10, 12, 19, 21, 22)
Total Supply Current – Shutdown
Enable Logic Input (ENA, ENB) High = On, Low = Off
ENA, ENB Input High Voltage (On)
ENA, ENB Input Low Voltage (Off)
ENA, ENB Input Current
188
191
379
TBD
TBD
TBD
500
mA
mA
mA
µA
ENA = ENB = Low
2.5
V
V
0.3
30
–0.3V to V + 0.3V
–20
µA
CC
Turn On Time
1
µs
Turn Off Time
1.5
µs
5590p
2
LTC5590
Dc elecTrical characTerisTics VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
unless otherwise noted. Test circuit shown in Figure 1. (Note 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Low Current Mode Logic Input (I ) High = Low Power, Low = Normal Power Mode
SEL
I
I
I
Input High Voltage
Input Low Voltage
Input Current
2.5
V
V
SEL
SEL
SEL
0.3
30
–0.3V to V + 0.3V
–20
µA
CC
Low Current Mode Current Consumption (I = High)
SEL
Mixer Supply Current (Pins 12, 19)
123
116
239
TBD
TBD
TBD
mA
mA
mA
IF Amplifier Supply Current (Pins 9, 10, 21, 22)
Total Supply Current (Pins 9, 10, 12, 19, 21, 22)
ac elecTrical characTerisTics VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
PLO = 0dBm, PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
LO Input Frequency Range
RF Input Frequency Range
700 to 1500
MHz
Low Side LO
High Side LO
1100 to 1700
600 to 1100
MHz
MHz
IF Output Frequency Range
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
LO Input Power
Requires External Matching
5 to 500
>12
MHz
dB
Z = 50Ω, 700MHz to 1600MHz
O
Z = 50Ω, 700MHz to 1500MHz
O
>12
dB
Differential at 190MHz
300Ω||2.3pF
0
R||C
dBm
dBm
dBm
dB
f
LO
f
LO
f
LO
f
RF
f
RF
f
RF
= 700MHz to 1500MHz
= 700MHz to 1500MHz
= 700MHz to 1500MHz
= 600MHz to 1700MHz
= 600MHz to 1700MHz
= 600MHz to 1700MHz
–4
6
LO to RF Leakage
<–36
<–26
>57
LO to IF Leakage
RF to LO Isolation
RF to IF Isolation
>17
dB
Channel-to-Channel Isolation
53
dB
High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
RF = 700MHz
RF = 900MHz
RF = 1100MHz
8.6
8.7
8.5
dB
dB
dB
TBD
Conversion Gain Flatness
Conversion Gain vs Temperature
Input 3rd Order Intercept
RF = 900 30MHz, LO = 1090MHz, IF = 190 30MHz
0.25
dB
T = –40ºC to 105ºC, RF = 1950MHz
C
–0.006
dB/°C
RF = 700MHz
RF = 900MHz
RF = 1100MHz
25.3
26.0
24.8
dBm
dBm
dBm
TBD
SSB Noise Figure
RF = 700MHz
RF = 900MHz
RF = 1100MHz
9.3
9.7
9.9
dB
dB
dB
TBD
5590p
3
LTC5590
ac elecTrical characTerisTics VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, TC = 25°C, PLO = 0dBm,
PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3)
High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
SSB Noise Figure Under Blocking
f
= 900MHz, f = 1090MHz, f
= 800MHz
RF
P
P
LO
BLOCK
= 5dBm
15.6
21.2
dB
dB
BLOCK
BLOCK
= 10dBm
2LO-2RF-Output Spurious Product
f
f
= 995MHz at –10dBm, f = 1090MHz,
–77
dBc
RF
IF
LO
(f = f – f /2)
= 190MHz
RF
LO
IF
3LO-3RF Output Spurious Product
(f = f – f /3)
f
f
= 1026.67MHz at –10dBm, f = 1090MHz,
–77
dBc
RF
IF
LO
= 190MHz
RF
LO
IF
Input 1dB Compression
f
RF
f
RF
= 900MHz, V
= 900MHz, V
= 3.3V
= 5V
10.7
14.1
dBm
dBm
CCIF
CCIF
Low Power Mode, High Side LO Downmixer Application: ISEL = High, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
PARAMETER
CONDITIONS
RF = 900MHz
RF = 900MHz
RF = 900MHz
MIN
TYP
7.7
MAX
UNITS
dB
Conversion Gain
Input 3rd Order Intercept
SSB Noise Figure
21.5
9.9
dBm
dB
Input 1dB Compression
RF = 900MHz, V
RF = 900MHz, V
= 3.3V
= 5V
10.4
10.9
dBm
dBm
CCIF
CCIF
Low Side LO Downmixer Application: ISEL = Low, RF = 1100MHz to 1600MHz, IF = 190MHz, fLO = fRF – fIF
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
8.6
8.4
7.7
dB
dB
dB
Conversion Gain Flatness
Conversion Gain vs Temperature
Input 3rd Order Intercept
RF = 1600 30MHz, LO = 1790MHz, IF = 190 30MHz
0.22
dB
T = –40ºC to 105ºC, RF = 1600MHz
C
–0.008
dB/°C
RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
27.5
27.3
27.2
dBm
dBm
dBm
SSB Noise Figure
RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
9.9
9.7
10.4
dB
dB
dB
SSB Noise Figure Under Blocking
f
= 1400MHz, f = 1210MHz, f
= 1500MHz
RF
P
P
LO
BLOCK
= 5dBm
15.0
20.8
dB
dB
BLOCK
BLOCK
= 10dBm
2RF-2LO Output Spurious Product
f
RF
f
IF
= 1305MHz at –10dBm, f = 1210MHz,
–72
dBc
LO
(f = f + f /2)
= 190MHz
RF
LO
IF
3RF-3LO Output Spurious Product
(f = f + f /3)
f
RF
f
IF
= 1273.33MHz at –10dBm, f = 1210MHz,
–72
dBc
LO
= 190MHz
RF
LO
IF
Input 1dB Compression
RF = 1400MHz, V
RF = 1400MHz, V
= 3.3V
= 5V
11.0
14.4
dBm
dBm
CCIF
CCIF
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 3: SSB Noise Figure measured with a small-signal noise source,
bandpass filter and 6dB matching pad on RF input, bandpass filter and
6dB matching pad on the LO input, and no other RF signals applied.
Note 4: Channel A to channel B isolation is measured as the relative IF
output power of channel B to channel A, with the RF input signal applied to
channel A. The RF input of channel B is 50Ω terminated and both mixers
are enabled.
Note 2: The LTC5590 is guaranteed functional over the case operating
temperature range of –40°C to 105°C. (θ = 7°C/W)
JC
5590p
4
LTC5590
Typical ac perForMance characTerisTics
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
High Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
Conversion Gain and IIP3 vs
RF Frequency
SSB NF vs RF Frequency
Channel Isolation vs RF Frequency
28
26
24
22
20
18
16
14
12
10
8
17
16
15
14
13
12
11
10
9
60
55
50
45
40
35
30
16
15
14
13
12
11
10
9
–40°C
25°C
85°C
IIP3
105°C
–40°C
25°C
85°C
105°C
8
8
G
C
7
7
6
6
6
600 700
800
900 1000 1100 1200
600 700
800
900 1000 1100 1200
600 700
800
900 1000 1100 1200
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
5590 G01
5590 G03
5590 G02
700Mhz Conversion Gain, IIP3
and NF vs LO Input Power
1100MHz Conversion Gain, IIP3
and NF vs LO Input Power
900MHz Conversion Gain, IIP3
and NF vs LO Input Power
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
28
26
24
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
28
26
24
22
20
18
16
14
12
10
8
28
26
24
22
20
18
16
14
12
10
8
IIP3
IIP3
IIP3
–40°C
25°C
85°C
–40°C
–40°C
25°C
85°C
25°C
85°C
NF
NF
NF
6
6
6
G
C
G
4
4
4
C
G
C
2
2
2
6
0
6
0
6
0
–6
–4
–2
0
2
4
6
–6
–4
–2
0
2
4
6
–6
–4
–2
0
2
4
6
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5590 G06
5590 G05
5590 G04
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
Conversion Gain, IIP3 and RF Input
P1dB vs Temperature
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
22
20
18
16
14
12
10
8
28
26
24
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
28
28
26
24
22
20
18
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
IIP3
IIP3
IIP3
–40°C
–40°C
25°C
85°C
V
CCIF
V
CCIF
= 3.3V
= 5V
25°C
85°C
NF
NF
6
P1dB
50
6
G
C
4
G
C
4
2
G
C
2
6
0
6
6
0
3
3.1
V
3.2
3.3
3.4
3.5
3.6
–40
–10
20
80
110
3
3.5
4
4.5
5
5.5
, V
SUPPLY VOLTAGE (V)
CASE TEMPERATURE (°C)
V
SUPPLY VOLTAGE (V)
CC CCIF
CCIF
5590 G07
5590 G09
5590 G08
5590p
5
LTC5590
Typical ac perForMance characTerisTics High Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
Single-Tone IF Output Power, 2 × 2
and 3 × 3 Spurs vs RF Input Power
2 × 2 and 3 × 3 Spur Suppression
vs LO Input Power
20
10
20
10
–60
–65
–70
–75
–80
–85
IF
OUT
RF = 900MHz
RF = 900MHz
P
= –10dBm
IN
LO = 1090MHz
0
0
IF
OUT
–10
–20
–30
–40
–10
–20
–30
–40
–50
–60
2LO-2RF
RF = 995MHz
3LO-3RF
RF = 1026.67MHz
LO = 1090MHz
LO
P
= 0dBm
3LO-3RF
RF = 1026.67MHz
–50
–60
–70
IM3
–6
IM5
2LO-2RF
RF = 995MHz
–70
–80
–80
–12
–9
–3
0
3
6
–12
–9
–6
RF INPUT POWER (dBm)
6
–6
–3
0
3
6
–3
0
3
RF INPUT POWER (dBm/TONE)
LO INPUT POWER (dBm)
5590 G10
5590 G11
5590 G12
SSB Noise Figure vs RF Blocker
Power
LO Leakage vs LO Frequency
RF Isolation vs RF Frequency
70
60
50
40
30
20
10
0
24
22
20
18
16
14
12
10
8
0
P
LO
P
LO
P
LO
P
LO
= –3dBm
= 0dBm
= 3dBm
= 6dBm
RF-LO
–10
–20
–30
–40
–50
–60
RF = 900MHz
BLOCKER = 800MHz
LO-IF
RF-IF
LO-RF
600
700
800
900 1000 1100 1200
–20
–15
–10
–5
0
5
10
800
900 1000 1100 1200 1300 1400
LO FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF BLOCKER POWER (dBm)
5590 G15
5590 G13
5590 G14
TBD
TBD
TBD
5590p
6
LTC5590
Typical ac perForMance characTerisTics Low Power Mode, High Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = High, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain and IIP3 vs
RF Frequency
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
SSB NF vs RF Frequency
16
23
22
21
20
19
18
17
16
15
14
13
12
16
14
12
10
8
20
10
–40°C
25°C
15
14
IFOUT
85°C
0
105°C
13
12
11
10
9
–10
–20
–30
–40
–50
–60
–70
–80
IIP3
RF1 = 899MHz
RF2 = 901MHz
LO = 1090MHz
–40°C
25°C
IM3
IM5
85°C
105°C
8
7
6
G
C
5
6
600 700
800
900 1000 1100 1200
600 700
800
900 1000 1100 1200
–12
–9
–6
–3
0
3
6
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF INPUT POWER (dBm/tone)
5590 G19
5590 G20
5590 G21
700MHz Conversion Gain, IIP3
and NF vs LO Input Power
900MHz Conversion Gain, IIP3
and NF vs LO Input Power
1100MHz Conversion Gain, IIP3
and NF vs LO Input Power
20
18
16
14
12
10
8
20
18
16
14
12
10
8
20
24
22
24
22
24
22
IIP3
18
16
14
12
10
8
IIP3
IIP3
20
18
16
14
12
10
8
20
18
16
14
12
10
8
20
18
16
14
12
10
8
–40°C
25°C
85°C
–40°C
25°C
85°C
NF
NF
–40°C
25°C
85°C
NF
6
6
6
G
G
C
G
C
C
4
4
4
2
2
6
6
2
6
–6
–4
–2
0
2
4
6
–6
–4
–2
0
2
4
6
–6
–4
–2
0
2
4
6
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5590 G22
5590 G23
5590 G24
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
Conversion Gain, IIP3 and RF
Input P1dB vs Temperature
20
18
16
14
12
10
8
20
24
22
24
24
22
18
16
14
12
10
8
22
20
18
16
14
12
10
8
20
18
16
14
12
10
8
20
18
16
14
12
10
8
IIP3
–40°C
IIP3
–40°C
IIP3
V
CCIF
V
CCIF
= 3.3V
= 5V
25°C
85°C
25°C
85°C
NF
NF
P1dB
6
6
G
C
G
C
4
4
G
C
2
3.6
6
2
5.5
6
6
3
3.1
V
3.2
, V
3.3
3.4
3.5
3
3.5
V
4
4.5
5
–40
–10
20
50
80
110
Supply Voltage (V)
, V
Supply Voltage (V)
CASE TEMPERATURE (°C)
CC CCIF
CC CCIF
5590 G25
5590 G26
5590 G27
5590p
7
LTC5590
Typical ac perForMance characTerisTics Low Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain and IIP3 vs
RF Frequency
SSB Noise Figure vs RF Blocker
Level
SSB NF vs RF Frequency
30
28
26
24
22
20
18
16
14
12
10
8
16
15
14
13
12
16
15
14
13
12
11
10
9
24
22
20
18
P
LO
P
LO
P
LO
P
LO
= –3dBm
= 0dBm
= 3dBm
= 6dBm
–40°C
25°C
85°C
IIP3
105°C
–40°C
25°C
85°C
RF = 1400MHz
BLOCKER = 1500MHz
105°C 11
16
14
12
10
8
10
9
G
C
8
8
7
7
6
6
1100 1200 1300 1400 1500 1600 1700
RF FREQUENCY (MHz)
1100 1200 1300
1500 1600 1700
–20 –15
–10
–5
0
5
10
1400
RF FREQUENCY (MHz)
RF BLOCKER LEVEL (dBm)
5590 G28
5590 G29
5590 G30
1200MHz Conversion Gain, IIP3
and NF vs LO Input Power
1400MHz Conversion Gain, IIP3
and NF vs LO Input Power
1600MHz Conversion Gain, IIP3
and NF vs LO Input Power
30
24
30
24
30
24
26
22
18
14
10
6
20
16
12
8
26
22
18
14
10
6
20
16
12
8
26
22
18
14
10
6
20
16
12
8
IIP3
IIP3
IIP3
–40°C
25°C
85°C
–40°C
25°C
85°C
–40°C
25°C
85°C
NF
NF
NF
G
C
G
C
4
4
4
G
C
0
0
0
–6
–4
–2
0
2
4
6
–6
–4
–2
0
2
4
6
–6
–4
–2
0
2
4
6
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5590 G31
5590 G32
5590 G33
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
Conversion Gain, IIP3 and
RF Input P1dB vs Temperature
30
24
30
24
30
26
22
18
14
10
6
20
16
12
8
26
22
20
16
26
22
18
14
10
6
IIP3
IIP3
IIP3
–40°C
25°C
85°C
–40°C
25°C
85°C
V
V
= 3.3V
CCIF
CCIF
= 5V
18
14
10
6
12
8
NF
NF
P1dB
50
G
C
G
C
4
4
G
C
0
3.6
0
5.5
3
3.1
3.2
3.3
3.4
3.5
3
3.5
V
4
4.5
SUPPLY VOLTAGE (V)
CCIF
5
–40
–10
20
80
110
V
, V
SUPPLY VOLTAGE (V)
CASE TEMPERATURE (°C)
CC CCIF
5590 G34
5590 G35
5590 G36
5590p
8
LTC5590
Typical Dc perForMance characTerisTics ENA = ENB = High, test circuit shown in Figure 1.
ISEL = Low
VCC Supply Current vs Supply
Voltage (Mixer and LO Amplifier)
VCCIF Supply Current vs
Supply Voltage (IF Amplifier)
Total Supply Current vs
Temperature (VCC + VCCIF
)
196
260
240
220
480
460
440
420
400
380
360
340
320
300
280
V
= V
CC
V
= 3.3V
CCIF
CC
105°C
85°C
194
192
190
188
186
184
182
180
105°C
25°C
V
= 3.3V, V
= 5V
CCIF
CC
(DUAL SUPPLY)
85°C
200
180
160
140
120
25°C
V
= V
= 3.3V
CCIF
CC
(SINGLE SUPPLY)
–40°C
–40°C
3.3 3.6
3.9 4.2 4.5 4.8 5.1 5.4
SUPPLY VOLTAGE (V)
–40
–10
20
50
80
110
3
3.1
3.2
3.3
3.4
3.5
3.6
3
V
SUPPLY VOLTAGE (V)
V
CCIF
CASE TEMPERATURE (°C)
CC
5590 G37
5590 G38
5590 G39
ISEL = High
CC Supply Current vs Supply
Voltage (Mixer and LO Amplifier)
V
VCCIF Supply Current vs Supply
Voltage (IF Amplifier)
Total Supply Current vs
Temperature (VCC + VCCIF
)
130
128
126
124
122
120
118
116
170
150
130
300
V
= V
CC
V
= 3.3V
CCIF
CC
280
260
240
220
200
180
105°C
105°C
V
= 3.3V, V
= 5V
CCIF
CC
(DUAL SUPPLY)
85°C
85°C
25°C
V
= V
= 3.3V
CCIF
CC
25°C
110
90
(SINGLE SUPPLY)
–40°C
–40°C
70
3
3.1
3.2
3.3
3.4
3.5
3.6
3
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4
SUPPLY VOLTAGE (V)
–40
–10
20
50
80
110
V
SUPPLY VOLTAGE (V)
V
CASE TEMPERATURE (°C)
CC
CCIF
5590 G40
5590 G41
5590 G42
5590p
9
LTC5590
pin FuncTions
RFA, RFB (Pins 1, 6): Single-Ended RF Inputs for Chan-
nels A and B. These pins are internally connected to the
primary sides of the RF input transformers, which have
low DC resistance to ground. Series DC-blocking capaci-
tors should be used to avoid damage to the integrated
transformerwhenDCvoltageispresentattheRFinputs.
The RF inputs are impedance matched when the LO input
is driven with a 0 6dBm source between 700MHz and
1.5GHz and the channels are enabled.
IFBB, IFBA (Pins 11, 20): Bias Adjust Pins for the IF
Amplifiers. These pins allow independent adjustment
of the internal IF buffer currents for channels B and A,
respectively. The typical DC voltage on these pins is 2.2V.
If not used, these pins must be DC isolated from ground
and V .
CC
V
and V
(Pins 12, 19): Power Supply Pins for the
CCA
CCB
LO Buffers and Bias Circuits. These pins must be con-
nected to a regulated 3.3V supply with bypass capacitors
located close to the pins. Typical current consumption is
94mA per pin.
CTA, CTB (Pins 2, 5): RF Transformer Secondary Center-
Tap on Channels A and B. These pins may require bypass
capacitors to ground to optimize IIP3 performance. Each
pin has an internally generated bias voltage of 1.2V and
ENB, ENA (Pins 14, 17): Enable Pins. These pins allow
Channels B and A, respectively, to be independently en-
abled. An applied voltage of greater than 2.5V activates
the associated channel while a voltage of less than 0.3V
disables the channel. Typical input current is less than
10μA. These pins must not be allowed to float.
must be DC-isolated from ground and V .
CC
GND (Pins 3, 4, 7, 13, 15, 24, Exposed Pad Pin 25):
Ground. These pins must be soldered to the RF ground
plane on the circuit board. The exposed pad metal of the
package provides both electrical contact to ground and
good thermal contact to the printed circuit board.
LO (Pin 16): Single-Ended Local Oscillator Input. This
pin is internally connected to the primary side of the LO
input transformer and has a low DC resistance to ground.
Series DC-blocking capacitors should be used to avoid
damage to the integrated transformer when DC voltage
present at LO input. The LO input is internally matched
to 50Ω for all states of ENA and ENB.
IFGNDB, IFGNDA(Pins8, 23):DCGroundReturnsforthe
IF Amplifiers. These pins must be connected to ground to
complete the DC current paths for the IF amplifiers. Chip
inductors may be used to tune LO-IF and RF-IF leakage.
Typical DC current is 95mA for each pin.
+
–
–
+
IFB ,IFB ,IFA ,IFA (Pins9,10,21,22):Open-Collector
DifferentialOutputsfortheIFAmplifiersofChannelsBand
A. These pins must be connected to a DC supply through
impedancematchinginductors,ortransformercenter-taps.
Typical DC current consumption is 48mA into each pin.
I
(Pin 18): Low Current Select Pin. When this pin is
SEL
pulled low (<0.3V), both mixer channels are biased at
the normal current level for best RF performance. When
greater than 2.5V is applied, both channels operate at
reduced current, which provides reasonable performance
at lower power consumption.
5590p
10
LTC5590
block DiagraM
24
23
IFGNDA
22
IFA
21
IFA
20
IFBA
19
V
+
–
GND
CCA
I
SEL
18
17
IF
BIAS
AMP
ENA
LO
RFA
1
2
LO
PASS
MIX
CTA
AMP
16
GND
3
4
5
GND
CTB
GND 15
LO
PASS
MIX
AMP
RFB
6
ENB
14
IF
BIAS
IFBB
AMP
GND 13
+
–
IFGNDB
IFB
IFB
10
V
CCB
GND
7
8
9
11
12
5590 BD
5590p
11
LTC5590
TesT circuiT
T1A
4:1
IFA
50Ω
C7A
L2A
RF
0.015”
0.062”
0.015”
L1A
GND DC1710A
BOARD
BIAS
V
CCIF
V
3.3V
180mA
CC
3.3V TO 5V
200mA
STACK-UP
(NELCO N4000-13)
C6
C5A
GND
C3A
ISEL
C4
24
GND IFGNDA
RFA
23
22
21
20
19
+
–
C1A
IFA
IFA
IFBA
V
CCA
RFA
50Ω
1
2
3
4
5
6
18
17
16
15
14
13
I
SEL
(0V/3.3V)
ENA
(0V/3.3V)
CTA
GND
GND
CTB
RFB
ENA
LO
C2
LO
50Ω
LTC5590
GND
ENB
GND
ENB
(0V/3.3V)
C1B
RFB
50Ω
+
–
IFB
9
IFB
10
IFBB
11
V
CCB
12
GND IFGNDA
7
8
5590 TC01
C3B
C5B
L1B
L2B
C7B
IFB
50Ω
4:1
T1B
REF DES
C1A, C1B
C2
VALUE
100pF
10pF
SIZE
0402
0402
0402
COMMENTS
AVX
L1, L2 vs IF FREQUENCIES
IF (MHz)
140
L1, L2 (nH)
AVX
270
150
100
56
C3A, C3B
C5A, C5B
22pF
AVX
190
240
C4, C6
C7A, C7B
L1, L2
1µF
0603
0402
0603
AVX
AVX
300
1000pF
150nH
380
33
Coilcraft
Mini-Circuits
450
22
T1A, T2B
TC1-1W-7ALN+
Figure 1. Standard Downmixer Test Circuit Schematic (190MHz)
5590p
12
LTC5590
applicaTions inForMaTion
Introduction
The secondary winding of the RF transformer is internally
connectedtothechannelApassivemixercore.Thecenter-
tap of the transformer secondary is connected to Pin 2
(CTA) to allow the connection of bypass capacitor, C8A.
The value of C8A is LO frequency-dependent and is not
required for most applications, though it can improve IIP3
in some cases. When used, it should be located within
2mm of Pin 2 for proper high frequency decoupling. The
nominal DC voltage on the CTA pin is 1.2V.
The LTC5590 consists of two identical mixer channels
driven by a common LO input signal. Each high linearity
mixer consists of a passive double-balanced mixer core,
IF buffer amplifier, LO buffer amplifier and bias/enable
circuits.SeethePinFunctionsandBlockDiagramsections
for a description of each pin. Each of the mixers can be
shutdownindependentlytoreducepowerconsumptionand
low current mode can be selected that allows a trade-off
betweenperformanceandpowerconsumption.TheRFand
LO inputs are single-ended and are internally matched to
50Ω. Low side or high side LO injection can be used. The
IF outputs are differential. The evaluation circuit, shown in
Figure 1, utilizes bandpass IF output matching and an IF
transformer to realize a 50Ω single-ended IF output. The
evaluation board layout is shown in Figure 2.
For the RF inputs to be properly matched, the appropriate
LO signal must be applied to the LO input. A broadband
input match is realized with C1A = 100pF. The measured
input return loss is shown in Figure 4 for LO frequencies
of 0.7GHz, 1.09GHz and 1.5GHz. These LO frequencies
correspond to lower, middle and upper values in the LO
range. As shown in Figure 4, the RF input impedance is
dependent on LO frequency, although a single value of
C1A is adequate to cover the 700MHz to 1.5GHz RF band.
LTC5590
TO CHANNEL A
MIXER
RFA C1A
RFA
1
CTA
2
C8A
5590 F03
Figure 3. Channel A RF Input Schematic
5590 F02
0
LO = 700MHz
LO = 1090MHz
LO = 1500MHz
–5
Figure 2. Evaluation Board Layout
–10
–15
–20
RF Inputs
The RF inputs of channels A and B are identical. The RF
input of channel A, shown in Figure 3, is connected to the
primarywindingofanintegratedtransformer.A50Ωmatch
is realized when a series external capacitor, C1A, is con-
nected to the RF input. C1A is also needed for DC blocking
if the source has DC voltage present, since the primary
side of the RF transformer is internally DC-grounded. The
DC resistance of the primary is approximately 4.5Ω.
C1 = 100pF
–25
600 700 800 900 1000 1100 1200 1300 1400
FREQUENCY (MHz)
5590 F04
Figure 4. RF Port Return Loss
5590p
13
LTC5590
applicaTions inForMaTion
The RF input impedance and input reflection coefficient,
versus RF frequency, are listed in Table 1. The reference
plane for this data is Pin 1 of the IC, with no external
matching, and the LO is driven at 1.09GHz.
The secondary of the transformer drives a pair of high
speed limiting differential amplifiers for channels A and B.
TheLTC5590’sLOamplifiersareoptimizedforthe700MHz
to 1.5GHz LO frequency range; however, LO frequencies
outside this frequency range may be used with degraded
performance.
Table 1. RF Input Impedance and S11
(at Pin 1, No External Matching, fLO = 1.09GHz)
FREQUENCY
(GHz)
RF INPUT
S11
The LO port is always 50Ω matched when V is applied,
CC
IMPEDANCE
MAG
0.33
0.26
0.18
0.10
0.06
0.22
0.29
0.29
0.29
0.28
0.26
0.23
ANGLE
107
even when one or both of the channels is disabled. This
helps to reduce frequency pulling of the LO source when
the mixer is switched between different operating states.
Figure 6 illustrates the LO port return loss for the different
operating modes.
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
34.2 + j24.5
41.3 + j22.4
48.5 + j18.1
54.3 + j10.1
54.2 – j4.6
38.4 – j16
29.3 – j9.4
27.7 – j4.5
27.4 – j1.6
27.8 – j0.1
29.4 + j0.2
31.2 –j0.5
97
84
61
–45
0
BOTH CHANNELS ON
ONE CHANNEL ON
BOTH CHANNELS OFF
–116
–149
–165
–175
–180
179
–5
–10
–15
–20
–25
–178
C2 = 10pF
I
SEL
18
700 800 900 1000 1100 1200 1300 1400 1500
FREQUENCY (MHz)
BIAS
LTC5590
ENA
LO
5590 F06
17
16
Figure 6. LO Input Return Loss
TO
MIXER A
C2
LO
The nominal LO input level is 0dBm, though the limiting
amplifierswilldeliverexcellentperformanceovera 6dBm
input power range. Table 2 lists the LO input impedance
and input reflection coefficient versus frequency.
TO
MIXER B
ENB
14
BIAS
Table 2. LO Input Impedance vs Frequency
(at Pin 16, No External Matching, ENA = ENB = High)
5590 F05
S11
FREQUENCY
(GHz)
INPUT
Figure 5. LO Input Schematic
IMPEDANCE
MAG
0.46
0.37
0.26
0.15
0.07
0.12
0.19
0.26
0.33
ANGLE
97
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
29.7 + j34.7
39.9 + j34.1
48.7 + j26.6
50.8 + j15.1
46.5 + j6.2
39.9 + j2.5
34.0 + j1.4
29.2 + j2.1
25.6 + j3.8
LO Input
86
The LO input, shown in Figure 5, is connected to the
primary winding of an integrated transformer. A 50Ω
impedance match is realized at the LO port by adding
an external series capacitor, C2. This capacitor is also
needed for DC blocking if the LO source has DC voltage
present, since the primary side of the LO transformer is
DC-grounded internally. The DC resistance of the primary
is approximately 4.5Ω.
78
78
116
165
174
173
168
5590p
14
LTC5590
applicaTions inForMaTion
IF Outputs
For optimum single-ended performance, the differential
IF output must be combined through an external IF
transformer or a discrete IF balun circuit. The evaluation
board (see Figures 1 and 2) uses a 4:1 IF transformer for
impedancetransformationanddifferentialtosingle-ended
conversion.ItisalsopossibletoeliminatetheIFtransformer
and drive differential filters or amplifiers directly.
The IF amplifiers in channels A and B are identical. The IF
amplifier for channel A, shown in Figure 7, has differen-
+
–
tial open collector outputs (IFA and IFA ), a DC ground
return pin (IFGNDA), and a pin for adjusting the internal
bias (IFBA). The IF outputs must be biased at the sup-
ply voltage (V
), which is applied through matching
CCIFA
inductors L1A and L2A. Alternatively, the IF outputs can
be biased through the center tap of a transformer (T1A).
The common node of L1A and L2A can be connected to
the center tap of the transformer. Each IF output pin draws
approximately 48mA of DC supply current (96mA total).
An external load resistor, R2A, can be used to improve
impedance matching if desired.
AtIFfrequencies, theIFoutputimpedancecanbemodeled
as 300Ω in parallel with 2.3pF. The equivalent small-signal
model,includingbondwireinductance,isshowninFigure8.
Frequency-dependent differential IF output impedance is
listed in Table 3. This data is referenced to the package
pins (with no external components) and includes the ef-
fects of IC and package parasitics.
IFGNDA (Pin 23) must be grounded or the amplifier will
not draw DC current. Inductor L3A may improve LO-IF
and RF-IF leakage performance in some applications, but
is otherwise not necessary. Inductors should have small
resistance for DC. High DC resistance in L3A will reduce
the IF amplifier supply current, which will degrade RF
performance.
22
21
+
–
IFA
IFA
LTC5590
0.9nH
0.9nH
R
C
IF
IF
5590 F08
T1A
IFA
4:1
Figure 8. IF Output Small-Signal Model
C7A
L1A
L2A
R1A
(OPTION TO
REDUCE
V
CCIFA
Bandpass IF Matching
L3A (OR SHORT)
100mA
C5A
ThebandpassIFmatchingconfiguration,showninFigures
1 and 7, is best suited for IF frequencies in the 90MHz to
500MHz range. Resistor R2A may be used to reduce the IF
outputresistanceforgreaterbandwidthandinductorsL1A
and L2A resonate with the internal IF output capacitance
at the desired IF frequency. The value of L1A, L2A can be
estimated as follows:
DC POWER)
R2A
23
22
IFA
21
IFA
20
IGNDA
IFBA
+
–
V
CCA
IF
AMP
4mA
1
LTC5590
L1A =L2A =
2πf 2 • 2 •CIF
BIAS
(
)
IF
5590 F07
where C is the internal IF capacitance (listed in Table 3).
Figure 7. IF Amplifier Schematic with Bandpass Match
IF
5590p
15
LTC5590
applicaTions inForMaTion
Values of L1A and L2A are tabulated in Figure 1 for vari-
ous IF frequencies. The measured IF output return loss
for bandpass IF matching is plotted in Figure 9.
T1A
IFA
50Ω
V
CCIFA
4:1
3.1 TO 5.3V
C7A
C5A
L1A
IFA
L2A
Table 3. IF Output Impedance vs Frequency
DIFFERENTIAL OUTPUT
R2A
C9A
||
X (C ))
IF IF
FREQUENCY (MHz)
IMPEDANCE (R
IF
90
403 || – j610 (2.9pF)
384 || – j474 (2.4pF)
379 || – j381 (2.2pF)
380 || – j316 (2.1pF)
377 || – j253 (2.1pF)
376 || – j210 (2.0pF)
360 || – j177 (2.0pF)
22
21
+
–
140
190
240
300
380
450
IFA
LTC5590
5590 F10
Figure 10. IF Output with Lowpass Matching
0
–5
–10
–15
–20
–25
–30
180nH
0
68nH
–5
82nH + 1k
–10
270nH
100nH
–15
–20
–25
150nH
100nH
56nH
50
100
150
FREQUENCY (MHz)
200
250
22nH
33nH
5590 F11
50 100 150 200 250 300 350 400 450 500
FREQUENCY (MHz)
Figure 11. IF Output Return Loss with Lowpass Matching
5590 F09
has been laid out to accommodate this matching topology
with only minor modifications.
Figure 9. IF Output Return Loss with Bandpass Matching
Lowpass IF Matching
IF Amplifier Bias
For IF frequencies below 90MHz, the inductance values
become unreasonably high and the lowpass topology
shown in Figure 9 is preferred. This topology also can
The IF amplifier delivers excellent performance with V
CCIF
= 3.3V, which allows a single supply to be used for V and
CC
V
. At V
= 3.3V, the RF input P1dB of the mixer is
CCIF
CCIF
limited by the output voltage swing. For higher P1dB, in
this case, resistor R2A (Figure 7) can be used to reduce
the output impedance and thus the voltage swing, thus
improving P1dB. The trade-off for improved P1dB will be
lower conversion gain.
provide improved RF to IF and LO to IF isolation. V
CCIFA
is supplied through the center tap of the 4:1 transformer.
A lowpass impedance transformation is realized by shunt
elements R2A and C9A (in parallel with the internal RIF
and CIF), and series inductors L1A and L2A. Resistor
R2A is used to reduce the IF output resistance for greater
bandwidth, or it can be omitted for the highest conver-
sion gain. The final impedance transformation to 50Ω is
realized by transformer T1A. The measured return loss
is shown in Figure 11 for different values of inductance
(C9A = OpF). The case with 82nH inductors and R2A = 1k
is also shown. The LTC5590 demo board (see Figure 2)
With V
increased to 5V the P1dB increases by over
CCIF
3dB, at the expense of higher power consumption. Mixer
P1dB performance at 900MHz is tabulated in Table 4 for
V
values of 3.3V and 5V. For the highest conversion
CCIF
gain,high-Qwire-woundchipinductorsarerecommended
for L1A and L2A. Low cost multilayer chip inductors may
be substituted, with a slight reduction in conversion gain.
5590p
16
LTC5590
applicaTions inForMaTion
Table 4. Performance Comparison with VCCIF = 3.3V and 5V
(RF = 900MHz, High Side LO, IF = 190MHz)
When I
is set low (<0.3V), both channels operate at
SEL
nominal DC current. When I is set high (>2.5V), the DC
SEL
current in both channels is reduced, thus reducing power
consumption. The performance in low power mode and
normal power mode are compared in Table 6.
V
R2A
(Ω)
I
G
C
P1dB
IIP3
NF
CCIF
CCIF
(V)
(mA)
191
191
200
(dB)
8.7
7.5
8.7
(dBm)
(dBm)
(dB)
3.3
Open
1k
10.7
11.4
14.1
26.0
26.0
25.5
9.7
9.75
9.8
5
Open
LTC5590
V
CCA
19
The IFBA pin (Pin 20) is available for reducing the DC
current consumption of the IF amplifier, at the expense of
IIP3. The nominal DC voltage at Pin 20 is 2.1V, and this pin
should be left open-circuited for optimum performance.
The internal bias circuit produces a 4mA reference for the
IF amplifier, which causes the amplifier to draw approxi-
mately 100mA. If resistor R1A is connected to Pin 20 as
shown in Figure 7, a portion of the reference current can
be shunted to ground, resulting in reduced IF amplifier
current. For example, R1A = 1k will shunt away 1.5mA
from Pin 20 and the IF amplifier current will be reduced
by 38% to approximately 62mA. Table 5 summarizes RF
performance versus IF amplifier current.
I
SEL
500Ω
18
BIAS A
V
CCB
BIAS B
5590 F13
Figure 12. ISEL Interface Schematic
Table 6. Performance Comparison Between Different Power Modes
RF = 900MHz, High Side LO, IF = 190MHz, V = V
= 3.3V
CCIF
CC
I
G
C
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
CCIF
I
(mA)
(dB)
SEL
Low
High
376
8.7
26.0
21.5
10.7
10.4
9.7
9.9
Table 5. Mixer Performance with Reduced IF Amplifier Current
239
7.7
RF = 900MHz, High Side LO, IF = 190MHz, V = V
= 3.3V
CCIF
CC
I
G
IIP3
P1dB
(dB)
NF
Enable Interface
CCIF
C
R1
(mA)
95.5
86.5
78.3
68.6
(dB)
8.7
8.7
8.6
8.5
(dBm)
(dB)
Figure 13 shows a simplified schematic of the ENA pin
interface (ENB is identical). To enable channel A, the ENA
voltage must be greater than 2.5V. If the enable function
is not required, the enable pin can be connected directly
Open
4.7kΩ
2.2kΩ
1kΩ
26.0
25.6
25.0
24.1
10.7
10.6
10.6
10.5
9.7
9.7
9.6
9.6
to V . The voltage at the enable pin should never exceed
CC
the power supply voltage (V ) by more than 0.3V. If this
RF = 1400MHz, Low Side LO, IF = 190MHz, V = V
= 3.3V
CCIF
CC
CC
I
G
IIP3
P1dB
NF
CCIF
C
R1
(mA)
95.5
86.4
78.2
68.5
(dB)
8.4
8.5
8.5
8.4
(dBm)
(dBm)
(dB)
LTC5590
V
CCA
Open
4.7kΩ
2.2kΩ
1kΩ
27.3
26.8
26.2
25.1
11
9.7
9.6
9.6
9.6
19
10.9
10.9
10.8
ESD
CLAMP
ENA
17
500Ω
Low Current Mode
Both mixer channels can be set to low current mode us-
ing the I pin. This allows flexibility to select a reduced
SEL
5590 F13
current mode of operation when lower RF performance is
acceptable, reducing power consumption by 36%. Figure
Figure 13. ISEL Interface Schematic
12 shows a simplified schematic of the I pin interface.
SEL
5590p
17
LTC5590
applicaTions inForMaTion
shouldoccur,thesupplycurrentcouldbesourcedthrough
the ESD diode, potentially damaging the IC.
age transient that exceeds the maximum rating. A supply
voltage ramp time of greater than 1ms is recommended.
The Enable pins must be pulled high or low. If left float-
ing, the on/off state of the IC will be indeterminate. If a
three-state condition can exist at the enable pins, then a
pull-up or pull-down resistor must be used.
Spurious Output Levels
Mixer spurious output levels versus harmonics of the RF
and LO are tabulated in Tables 7 and 8 for frequencies up
to 10GHz. The spur levels were measured on a standard
evalution board using the test circuit shown in Figure 1.
The spur frequencies can be calculated using the follow-
ing equation:
Supply Voltage Ramping
Fast ramping of the supply voltage can cause a current
glitchintheinternalESDprotectioncircuits.Dependingon
the supply inductance, this could result in a supply volt-
f
= (M • f ) – (N • f )
RF LO
SPUR
Table 7. IF Output Spur Levels (dBc), High Side LO
(RF = 900MHz, P = –3dBm, P = 0dBm, V = V
= 3.3V, T = 25°C)
RF
LO
CC
CCIF
C
N
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
-
–40.0
0
–63.0
–42
–49.0
–78.6
–54.8
–47.4
–73.9
–81.5
–55.7
–72.2
–87.7
–66.5
–64.0
–87.8
–81.37
–88.5
82.3
*
*
*
*
*
*
–73.07
–70.3
–74.33
–81.6*
–72.53
–81.2*
–31.8
–68.6
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
–78.0
M
*
*
*
*
*
*
*
*
10
*Less than –100dBc
Table 8. IF Output Spur Levels (dBc), Low Side LO
(RF = 1400MHz, P = –3dBm, P = 0dBm, V = V
= 3.3V, T = 25°C)
RF
LO
CC
CCIF
C
N
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
-
–46.2
0
–74.4
–88.74
*
*
*
*
*
–42.2
–44.5
–69.3
*
*
*
*
*
*
–55.9
–52.2
–71.7
–76.8
*
*
*
*
–93.69
*
–56.9
–75.0
*
–71.3
–67.5
–86.4
*
*
*
*
*
*
–67.39
–78.3
–83.2
–85.33
–73.42
–69.93
*
–93.16
–40.8
–77.5
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
–89.21
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
M
9
10
–95.59
–94.52
*Less than –100dBc
5590p
18
LTC5590
package DescripTion
UH Package
24-Lead Plastic QFN (5mm × 5mm)
(Reference LTC DWG # 05-08-1747 Rev A)
0.75 ±0.05
5.40 ±0.05
3.90 ±0.05
3.20 ± 0.05
3.25 REF
3.20 ± 0.05
PACKAGE OUTLINE
0.30 ± 0.05
0.65 BSC
PIN 1 NOTCH
R = 0.30 TYP
OR 0.35 × 45°
CHAMFER
RECOMMENDED SOLDER PAD LAYOUT
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
BOTTOM VIEW—EXPOSED PAD
R = 0.150
R = 0.05
TYP
0.75 ± 0.05
5.00 ± 0.10
TYP
23 24
0.00 – 0.05
0.55 ± 0.10
PIN 1
TOP MARK
(NOTE 6)
1
2
3.20 ± 0.10
5.00 ± 0.10
3.25 REF
3.20 ± 0.10
(UH24) QFN 0708 REV A
0.200 REF
0.30 ± 0.05
0.65 BSC
NOTE:
1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5590p
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
19
LTC5590
Typical applicaTion
Downconverting Mixer with Lowpass IF Matching
Conversion Gain, NF and IIP3
vs RF Frequency
T1A
4:1
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
IFA
50Ω
V
CCIF
IIP3
T
= 25°C
C
V
3.3V
188mA
CC
3.3V TO 5V
191mA
IF = 140MHz
1µF
22pF
82nH
82nH
20
1k
22pF
1µF
TO
CHANNEL B
(96mA)
NF
TO
24
GND IFGNDA
RFA
23
22
21
19
CHANNEL B
(94mA)
+
–
100pF
IFA
IFA IFBA V
G
C
CCA
I
RFA
50Ω
8
1
2
3
4
I
SEL
18
17
16
15
SEL
7
700
800
900
1000
1100
1200
ENA
CTA
ENA
LO
RF FREQUENCY (MHz)
LTC5590
CHANNEL A
5590 TA02b
10pF
LO
GND
GND
50Ω
GND
5590 TA02
CHANNEL B NOT SHOWN
relaTeD parTs
PART
NUMBER
Infrastructure
LT5527
DESCRIPTION
COMMENTS
2.3dB Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz, 5V/78mA Supply
2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA Supply
40.25dBm OIP3 to 300MHz, Programmable Fast Recovery Output Clamping
35dBm OIP3 at 240MHz, Continuous Gain Range –14dB to 17dB
8dB Gain, >25dBm IIP3, 10dB NF, 3.3V/200mA Supply
48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain Steps
27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF Transformer
27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF Ports
400MHz to 3.7GHz, 5V Downconverting Mixer
400MHz to 3.8GHz, 3.3V Downconverting Mixer
2GHz 16-Bit ADC Buffer
31dB Linear Analog VGA
600MHz to 4GHz Downconverting Mixer Family
Ultralow Distort IF Digital VGA
LT5557
LTC6416
LTC6412
LTC554X
LT5554
LT5578
LT5579
400MHz to 2.7GHz Upconverting Mixer
1.5GHz to 3.8GHz Upconverting Mixer
RF Power Detectors
LTC5581
LTC5582
LTC5583
6GHz Low Power RMS Detector
10GHz RMS Power Detector
40dB Dynamic Range, 1dB Accuracy Overtemperature, 1.5mA Supply Current
40MHz to 10GHz, Up to 57dB Dynamic Range, 0.5dB Accuracy Overtemperature
Dual 6GHz RMS Power Detector Measures VSWR 40MHz to 6GHz, Up to 60dB Dynamic Range, >40dB Channel-to-Channel Isolation,
Difference Output for vs WR Measurement
ADCs
LTC2285
LTC2185
14-Bit, 125Msps Dual ADC
16-Bit, 125Msps Dual ADC Ultralow Power
72.4dB SNR, >88dB SFDR, 790mW Power Consumption
74.8dB SNR, 185mW/Channel Power Consumption
65.4dB SNR, 78dB SFDR, 740mW Power Consumption
LTC2242-12 12-Bit, 250Msps ADC
5590p
LT 0311 • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
20
●
●
LINEAR TECHNOLOGY CORPORATION 2011
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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