LT5558EUF#TRBPF_技术文档

LT5558

600MHz to 1100MHz

High Linearity Direct

Quadrature Modulator

FEATURES

DESCRIPTION

The LT^®5558 is a direct I/Q modulator designed for high

performance wireless applications, including wireless

infrastructure. It allows direct modulation of an RF signal

using differential baseband I and Q signals. It supports

GSM, EDGE, CDMA, CDMA2000, and other systems. It

may also be conﬁgured as an image reject upconverting

mixer, by applying 90° phase-shifted signals to the I and

Qinputs. ThehighimpedanceI/Qbasebandinputsconsist

of voltage-to-current converters that in turn drive double-

balancedmixers.Theoutputsofthesemixersaresummed

and applied to an on-chip RF transformer, which converts

thedifferentialmixersignalstoa50Ωsingle-endedoutput.

The balanced I and Q baseband input ports are intended

for DC coupling from a source with a common-mode

voltage level of about 2.1V. The LO path consists of an LO

buffer with single-ended input, and precision quadrature

generators which produce the LO drive for the mixers.

The supply voltage range is 4.5V to 5.25V.

■

Direct Conversion from Baseband to RF

■

High OIP3: + 22.4dBm at 900MHz

■

Low Output Noise Floor at 20MHz Offset:

No RF: –158dBm/Hz

P

OUT

= 4dBm: –152.7dBm/Hz

■

Low Carrier Leakage: –43.7dBm at 900MHz

High Image Rejection: –49dBc at 900MHz

3 Channel CDMA2000 ACPR: –70.4dBc at 900MHz

Integrated LO Buffer and LO Quadrature Phase

Generator

■

50Ω AC-Coupled Single-ended LO and RF Ports

High Impedance Interface to Baseband Inputs

with 2.1V Common Mode Voltage

■

16-Lead QFN 4mm × 4mm Package

APPLICATIONS

■

RFID Single-Sideband Transmitters

■

Infrastructure T for Cellular and ISM Bands

X

■

Image Reject Up-Converters for Cellular Bands

Low-Noise Variable Phase-Shifter for 600MHz to

1100MHz Local Oscillator Signals

Microwave Links

, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.

All other trademarks are the property of their respective owners.

■

TYPICAL APPLICATION

CDMA2000 ACPR, AltCPR and Noise vs

RF Output Power at 900MHz for 1 and 3 Carriers

600MHz to 1100MHz Direct Conversion Transmitter Application

5V

2 x 100nF

V

CC

8, 13

–40

–50

–60

–70

–110

–120

–130

–140

DOWNLINK TEST

MODEL 64 DPCH

LT5558

14

16

RF = 600MHz TO

1100MHz

3-CH ACPR

3-CH ALTCPR

IDAC

V-1

I-CH

∫

PA

11

O°

1

1-CH ACPR

1-CH NOISE

EN

90°

BALUN

Q-CH

V-1

7

5

QDAC

1-CH ALTCPR

3-CH NOISE

–80

–90

–150

–160

BASEBAND

GENERATOR

–30

–20

–15

–10

–5

0

–25

RF OUTPUT POWER PER CARRIER (dBm)

5558 TA01

3

2, 4, 6, 9, 10,

12, 15, 17

5558 TA01b

VCO/SYNTHESIZER

5558fa

1

LT5558

ABSOLUTE MAXIMUM RATINGS

PACKAGE/ORDER INFORMATION

(Note 1)

TOP VIEW

ORDER PART NUMBER

Supply Voltage ........................................................5.5V

Common-Mode Level of BBPI, BBMI and

BBPQ, BBMQ .......................................................2.5V

Voltage on any Pin

LT5558EUF

16 15 14 13

EN

GND

LO

1

2

3

4

12 GND

11 RF

Not to Exceed....................–500mV to (V + 500mV)

GND

10

9

CC

GND

Operating Ambient Temperature

5

6

7

8

UF PART MARKING

5558

(Note 2) ............................................... –40°C to 85°C

Storage Temperature Range................... –65°C to 125°C

UF PACKAGE

16-LEAD (4mm × 4mm) PLASTIC QFN

T

= 125°C, θ = 37°C/W

JA

JMAX

EXPOSED PAD (PIN 17) IS GND, MUST BE

SOLDERED TO PCB

Order Options Tape and Reel: Add #TR

Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF

Lead Free Part Marking: http://www.linear.com/leadfree/

Consult LTC Marketing for parts speciﬁed with wider operating temperature ranges.

ELECTRICAL CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz, f = 902MHz,

DC

CC

A

LO

RF

P

LO

= 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1V , baseband input frequency = 2MHz, I and Q 90° shifted

(upper sideband selection). P

= –10dBm, unless otherwise noted. (Note 3)

RF(OUT)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

RF Output (RF)

f

RF

RF Frequency Range

–3 dB Bandwidth

–1 dB Bandwidth

600 to 1100

680 to 960

MHz

S

RF Output Return Loss

RF Output Noise Floor

EN = High (Note 6)

EN = Low (Note 6)

–15.8

–13.3

dB

22, ON

22, OFF

NFloor

No Input Signal (Note 8)

–158

–152.7

–152.3

dBm/Hz

P

RF

P

RF

= 4dBm (Note 9)

= 4dBm (Note 10)

G

Conversion Power Gain

Conversion Voltage Gain

Absolute Output Power

3 • LO Conversion Gain Difference

Output 1dB Compression

Output 2nd Order Intercept

Output 3rd Order Intercept

Image Rejection

P

/P

9.7

–5.1

–1.1

–26.5

7.8

dB

P

OUT IN,I&Q

20 • Log (V

,

/V

)

V

OUT 50Ω IN, DIFF, I or Q

P

OUT

1V

CW Signal, I and Q

dBm

dB

P-P DIFF

G

(Note 17)

(Note 7)

3LO vs LO

OP1dB

OIP2

OIP3

IR

dBm

dBc

dBm

%

(Notes 13, 14)

(Notes 13, 15)

(Note 16)

65

22.4

–49

–43.7

–60

0.6

LOFT

Carrier Leakage

EN = High, P = 0dBm (Note 16)

LO

(LO Feedthrough)

EN = Low, P = 0dBm (Note 16)

LO

EVM

GSM Error Vector Magnitude

P

RF

= 2dBm

LO Input (LO)

f

LO Frequency Range

LO Input Power

600 to 1100

0

MHz

dBm

LO

P

–10

5

LO

5558fa

2

LT5558

ELECTRICAL CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz, f = 902MHz,

A LO RF

DC

CC

P

LO

= 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1V , baseband input frequency = 2MHz, I and Q 90° shifted

(upper sideband selection). P

= –10dBm, unless otherwise noted. (Note 3)

RF(OUT)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

–10.6

–2.5

14.6

16.4

–3.3

MAX

UNITS

dB

S

LO Input Return Loss

EN = High (Note 6)

EN = Low (Note 6)

11, ON

S

dB

11, OFF

NF

LO

LO Input Referred Noise Figure

LO to RF Small-Signal Gain

LO Input 3rd Order Intercept

(Note 5) at 900MHz

dB

G

LO

dB

IIP3

dBm

LO

Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)

BW

Baseband Bandwidth

–3dB Bandwidth

400

2.1

MHz

V

BB

V

CMBB

DC Common-mode Voltage

Differential Input Resistance

Common Mode Input Resistance

(Note 4)

R

Between BBPI and BBMI (or BBPQ and BBMQ)

(Note 20)

3

kΩ

Ω

IN, DIFF

IN, CM

100

I

Common Mode Compliance Current range (Notes 18, 20)

–820 to 440

–46

μA

dBm

CM, COMP

P

Carrier Feedthrough on BB

Input 1dB compression point

I/Q Absolute Gain Imbalance

I/Q Absolute Phase Imbalance

P

= 0 (Note 4)

LO-BB

OUT

IP1dB

Differential Peak-to-Peak (Notes 7, 19)

3.4

V

P-P,DIFF

ΔG

0.05

0.2

dB

I/Q

Δϕ

Deg

Power Supply (V

)

CC

V

Supply Voltage

4.5

5

5.25

135

50

V

mA

μA

μs

CC

I

t

Supply Current

EN = High

108

0.1

0.3

1.1

CC(ON)

CC(OFF)

ON

Supply Current, Sleep mode

Turn-On Time

EN = 0V

EN = Low to High (Note 11)

EN = High to Low (Note 12)

Turn-Off Time

μs

OFF

Enable (EN), Low = Off, High = On

Enable

Input High Voltage

Input High Current

EN = High

EN = 5V

1

V

μA

230

Shutdown

Input Low Voltage

EN = Low

0.5

V

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: Speciﬁcations over the –40°C to 85°C temperature range are

assured by design, characterization and correlation with statistical process

controls.

Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set

in such a way that the two resulting RF tones are –10dBm each.

Note 14: IM2 measured at LO frequency + 4.1MHz

Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +

2.2MHz.

Note 16: Amplitude average of the characterization data set without image

or LO feedthrough nulling (unadjusted).

Note 17: The difference in conversion gain between the spurious signal at

f = 3 • LO - BB versus the conversion gain at the desired signal at f = LO +

BB for BB = 2MHz and LO = 900MHz.

Note 3: Tests are performed as shown in the conﬁguration of Figure 7.

Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.

Note 5: V

- V

BBMI

= 1V , V

- V

= 1V .

BBMQ DC

BBPI

DC BBPQ

Note 6: Maximum value within –1dB bandwidth.

Note 18: Common mode current range where the common mode (CM)

feedback loop biases the part properly. The common mode current is the

sum of the current ﬂowing into the BBPI (or BBPQ) pin and the current

ﬂowing into the BBMI (or BBMQ) pin.

Note 19: The input voltage corresponding to the output P1dB.

Note 20: BBPI and BBMI shorted together (or BBPQ and BBMQ shorted

Note 7: An external coupling capacitor is used in the RF output line.

Note 8: At 20MHz offset from the LO signal frequency.

Note 9: At 20MHz offset from the CW signal frequency.

Note 10: At 5MHz offset from the CW signal frequency.

Note 11: RF power is within 10% of ﬁnal value.

together).

Note 12: RF power is at least 30dB lower than in the ON state.

5558fa

3

LT5558

TYPICAL PERFORMANCE CHARACTERISTICS _V

= 5V, EN = High, T = 25°C, f = 900MHz,

CC

A

LO

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1V , baseband input frequency = 2MHz, I and Q 90°

LO DC

shifted, without image or LO feedthrough nulling. f = f + f (upper side-band selection). P = –10dBm (–10dBm/tone for

RF

BB

LO

RF(OUT)

2-tone measurements), unless otherwise noted. (Note 3)

RF Output Power vs LO Frequency

at 1V Differential

Voltage Gain vs LO Frequency

P-P

Supply Current vs Supply Voltage

Baseband Drive

130

2

0

–2

–4

120

110

100

90

–2

–6

85°C

–4

–6

–8

–10

–12

–14

25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

–8

–40°C

–10

–12

–16

4.5

4.75

5

5.25

650 750 850 950 1050

LO FREQUENCY (MHz)

650 750 850 950 1050

LO FREQUENCY (MHz)

550

1150 1250

550

1150 1250

SUPPLY VOLTAGE (V)

5558 G01

5558 G02

5558 G03

Output 1dB Compression vs LO

Frequency

Output IP3 vs LO Frequency

Output IP2 vs LO Frequency

26

24

75

70

65

60

55

50

45

10

8

f

= f

,

+ f

,

+ f

LO

IM2 BB

BB

1

BB

2

f

, 1 = 2MHz

, 2 = 2.1MHz

BB

,

= 2MHz

1

2

= 2.1MHz

22

6

20

18

16

14

4

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

2

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

0

12

–2

650 750 850 950 1050

LO FREQUENCY (MHz)

650 750 850 950 1050

LO FREQUENCY (MHz)

650 750 850 950 1050

LO FREQUENCY (MHz)

550

1150 1250

550

1150 1250

550

1150 1250

5558 G04

5558 G05

5558 G06

LO Feedthrough to RF Output vs

LO Frequency

2 • LO Leakage to RF Output vs

2 • LO Frequency

3 • LO Leakage to RF Output vs

3 • LO Frequency

–40

–45

–50

–55

–60

–45

–50

–55

–60

–65

–70

–40

–42

–44

–46

–48

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

650 750 850 950 1050

LO FREQUENCY (MHz)

1.3 1.5 1.7 1.9 2.1

2 • LO FREQUENCY (GHz)

1.95 2.25 2.55 2.85 3.15

3 • LO FREQUENCY (GHz)

550

1150 1250

1.1

2.3 2.5

1.65

3.5 3.75

5558 G07

5558 G08

5558 G09

5558fa

4

LT5558

V

= 5V, EN = High, T = 25°C, f = 900MHz,

A LO

TYPICAL PERFORMANCE CHARACTERISTICS

CC

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1V , baseband input frequency = 2MHz, I and Q 90°

LO DC

shifted, without image or LO feedthrough nulling. f = f + f (upper side-band selection). P

= –10dBm (–10dBm/tone for

RF

BB

LO

RF(OUT)

2-tone measurements), unless otherwise noted. (Note 3)

LO and RF Port Return Loss

vs RF Frequency

Noise Floor vs RF Frequency

Image Rejection vs LO Frequency

–157

–158

–159

–160

–161

–162

–30

–35

–40

–45

–50

–55

0

–10

–20

–30

–40

f

= 900MHz (FIXED)

LO

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

LO PORT, EN = LOW

NO BASEBAND SIGNAL

LO PORT, EN = HIGH, P = 0dBm

LO

RF PORT, EN = LOW

RF PORT, EN = HIGH,

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

P

= 0dBm

LO

LO PORT, EN = HIGH,

= –10dBm

P

LO

RF PORT, EN = HIGH, NO LO

650 750 850 950 1050

1150 1250

650 750 850 950 1050

RF FREQUENCY (MHz)

550

1150 1250

650 750 850 950 1050

LO FREQUENCY (MHz)

550

1150 1250

550

FREQUENCY (MHz)

5558 G24

5558 G10

5558 G25

Absolute I/Q Gain Imbalance vs

LO Frequency

Absolute I/Q Phase Imbalance vs

LO Frequency

Voltage Gain vs LO Power

0.2

4

–2

–4

–6

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

3

2

1

0

–8

–10

–12

0.1

–14

–16

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

–18

–20

0

550

650 750 850 950 1050

LO FREQUENCY (MHz)

650 750 850 950 1050

LO FREQUENCY (MHz)

–16 –12 –8

–4

0

1150 1250

550

1150 1250

–20

4

8

LO INPUT POWER (dBm)

5558 G11

5558 G12

5558 G13

Output IP3 vs LO Power

LO Feedthrough vs LO Power

Image Rejection vs LO Power

24

22

20

18

16

14

12

10

–40

–42

–44

–46

–48

–50

–35

–40

–45

–50

–55

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

f

= 2MHz

BB, 1

f

= 2.1MHz

BB, 2

–16 –12 –8

–4

0

–16 –12 –8

–4

0

–16 –12 –8

–4

0

–20

4

8

–20

4

8

–20

4

8

LO INPUT POWER (dBm)

5558 G14

5558 G15

5558 G16

5558fa

5

LT5558

TYPICAL PERFORMANCE CHARACTERISTICS _V

= 5V, EN = High, T = 25°C, f = 900MHz,

CC

A

LO

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1V , baseband input frequency = 2MHz, I and Q 90°

LO DC

shifted, without image or LO feedthrough nulling. f = f + f (upper side-band selection). P

= –10dBm (–10dBm/tone for

RF

BB

LO

RF(OUT)

2-tone measurements), unless otherwise noted. (Note 3)

RF CW Output Power, HD2 and

HD3 vs CW Baseband Voltage and

Temperature

RF CW Output Power, HD2 and

HD3 vs CW Baseband Voltage and

Supply Voltage

LO Feedthrough to RF Output vs

CW Baseband Voltage

–10

–20

–30

–40

–50

–60

–70

–80

10

–30

–35

–40

–45

–50

–10

–20

–30

–40

–50

–60

–70

–80

10

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

0

RF

–10

–20

–30

–40

–50

–60

–10

–20

–30

–40

–50

–60

HD3

HD2

–40°C

25°C

85°C

4.5V

5V

5.5V

1

2

3

1

2

3

0

4

5

)

0

4

5

)

1

2

3

0

4

5

)

I AND Q BASEBAND VOLTAGE (V

P-P, DIFF

5558 G17

P-P, DIFF

5558 G18

5558 G19

HD2 = MAX POWER AT f + 2 • f OR f – 2 • f

BB

HD2 = MAX POWER AT f + 2 • f OR f – 2 • f

BB

LO

BB

LO

BB

LO

HD3 = MAX POWER AT f + 3 • f OR f – 3 • f

BB

HD3 = MAX POWER AT f + 3 • f OR f – 3 • f

BB

LO

BB

LO

BB

LO

RF Two-Tone Power (Each Tone),

IM2 and IM3 vs Baseband Voltage

and Temperature

RF Two-Tone Power (Each Tone),

IM2 and IM3 vs Baseband Voltage

and Supply Voltage

Image Rejection vs CW Baseband

Voltage

–40

–45

–50

–55

–60

10

0

10

0

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

RF

–10

–20

–30

–40

–50

–60

–70

–80

–10

–20

–30

–40

–50

–60

–70

–80

f

= 2MHz, 2.1MHz, 0°

= 2MHz, 2.1MHz, 90°

BBI

BBQ

f

= 2MHz, 2.1MHz, 0°

= 2MHz, 2.1MHz, 90°

BBI

BBQ

IM2

IM3

IM2

IM3

–40°C

25°C

85°C

4.5V

5V

5.5V

1

2

3

0

4

5

)

0.1

1

10

0.1

1

10

I AND Q BASEBAND VOLTAGE (V

)

I AND Q BASEBAND VOLTAGE (V

)

P-P, DIFF

P-P, DIFF, EACH TONE

5558 G21

5558 G22

5558 G20

IM2 = POWER AT f + 4.1MHz

LO

IM2 = POWER AT f + 4.1MHz

LO

IM3 = MAX POWER AT f + 1.9MHz OR f + 2.2MHz

LO

5558fa

6

LT5558

TYPICAL PERFORMANCE CHARACTERISTICS _V

= 5V, EN = High, T = 25°C, f = 900MHz,

CC

A

LO

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1V , baseband input frequency = 2MHz, I and Q 90°

LO DC

shifted, without image or LO feedthrough nulling. f = f + f (upper side-band selection). P = –10dBm (–10dBm/tone for

RF

BB

LO

RF(OUT)

2-tone measurements), unless otherwise noted. (Note 3)

LO Leakage Distribution

Gain Distribution

Noise Floor Distribution

40

30

20

10

0

20

15

10

5

30

25

V

= 400mV

P-P

–40°C

25°C

85°C

V

= 400mV

–40°C

25°C

85°C

–40°C

25°C

85°C

BB

P-P

20

15

10

5

0

–6.5 –6 –5.5 –5

GAIN (dB)

–50

–48 –46 –44 –42 –40 –38 –36

8

–7.5 –7

–4.5 –4 –3.5

–158

–157.5

NOISE FLOOR (dBm/Hz)

–157

LO LEAKAGE (dBm)

5558 G28

5558 G26

5558 G27

LO Feedthrough and Image

Rejection vs Temperature After

Calibration at 25°C

Image Rejection Distribution

20

15

10

5

–40

–40°C

25°C

85°C

V

= 400mV

P-P

CALIBRATED WITH P = –10dBm

RF

BB

f

= 2MHz, 0°

BBQ

BBI

= 2MHz, 90° + ϕ

CAL

–50

–60

–70

LO FEEDTHROUGH

5

–80

–90

IMAGE REJECTION

0

<–66 –62 –58 –54 –50

IMAGE REJECTION (dBc)

–46 –42

–40

–20

0

20

40

60

80

TEMPERATURE (°C)

5558 G29

5558 G30

PIN FUNCTIONS

EN (Pin 1): Enable Input. When the Enable pin voltage is

higher than 1V, the IC is turned on. When the Enable volt-

age is less than 0.5V or if the pin is disconnected, the IC

is turned off. The voltage on the Enable pin should never

other internally. Pins 2 and 4 are connected to each other

internally and function as the ground return for the LO

signal. Pins 10 and 12 are connected to each other inter-

nally and function as the ground return for the on-chip RF

balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12,

15 and the Exposed Pad, Pin 17, should be connected to

the printed circuit board ground plane.

exceed V by more than 0.5V, in order to avoid possible

CC

damage to the chip.

GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9,

15 and the Exposed Pad, Pin 17, are connected to each

5558fa

7

LT5558

PIN FUNCTIONS

LO(Pin3):LOInput.TheLOinputisanAC-coupledsingle- 0.1μF capacitors for decoupling to ground on each of

ended input with approximately 50Ω input impedance at these pins.

RF frequencies. Externally applied DC voltage should be

RF (Pin 11): RF Output. The RF output is an AC-coupled

within the range –0.5V to (V + 0.5V) in order to avoid

CC

single-ended output with approximately 50Ω output im-

turning on ESD protection diodes.

pedance at RF frequencies. Externally applied DC voltage

BBPQ, BBMQ (Pins 7, 5): Baseband Inputs for the should be within the range –0.5V to (V + 0.5V) in order

Q-channel. Thedifferentialinputimpedanceis3kΩ. These to avoid turning on ESD protection diodes.

pins are internally biased at about 2.1V. Applied common

mode voltage must stay below 2.5V.

CC

BBPI, BBMI (Pins 14, 16): Baseband Inputs for the

I-channel. The differential input impedance is 3kΩ. These

V

(Pins 8, 13): Power Supply. Pins 8 and 13 are con- pins are internally biased at about 2.1V. Applied common

CC

nected to each other internally. It is recommended to use mode voltage must stay below 2.5V.

BLOCK DIAGRAM

V

CC

8

13

LT5558

BBPI 14

BBMI 16

V-I

0°

11 RF

90°

BALUN

BBPQ

BBMQ

7

5

1

EN

V-I

2

4

6

9

3

10

12

15

GND

17

5558 BD

LO

GND

APPLICATIONS INFORMATION

The LT5558 consists of I and Q input differential voltage-

to-current converters, I and Q up-conversion mixers, an

RF output signal combiner/balun, an LO quadrature phase

generator and LO buffers.

are then applied to on-chip buffers which drive the up-

conversion mixers. Both the LO input and RF output are

single-ended, 50Ω-matched and AC coupled.

Baseband Interface

External I and Q baseband signals are applied to the dif-

ferential baseband input pins, BBPI, BBMI, and BBPQ,

BBMQ.Thesevoltagesignalsareconvertedtocurrentsand

translated to RF frequency by means of double-balanced

up-converting mixers. The mixer outputs are combined

in an RF output balun, which also transforms the output

impedance to 50Ω. The center frequency of the resulting

RF signal is equal to the LO signal frequency. The LO in-

put drives a phase shifter which splits the LO signal into

in-phase and quadrature LO signals. These LO signals

The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) pres-

ent a differential input impedance of about 3kΩ. At each

of the four baseband inputs, a low-pass ﬁlter using 200Ω

and 1.8pF to ground is incorporated (see Figure 1), which

limits the baseband –1dB bandwidth to approximately

250MHz. The common-mode voltage is about 2.1V and

is slightly temperature dependent. At T = -40°C, the

A

common-mode voltage is about 2.28V and at T = 85°C

A

it is about 2.01V.

5558fa

8

LT5558

APPLICATIONS INFORMATION

V

4.5V TO 5.25V

RF OUT

CC

C

LT5558

RF

C5

8, 13 11

1

V

CC

= 5V

BALUN

C1

C2

C3

V

RF EN

CC

14

DC

7

BBPI BBPQ

2.1V

FROM Q

LOPI

DC

BB

SOURCE

BB

SOURCE

LT5558

C4

16

5

2.1V

LOMI

BBMI BBMQ

2.1V

DC

LO

GND

5558 F03

2, 4, 6, 9, 10,

12, 15, 17

3

200

BBPI

V

REF

= 0.5V

1.3k

1.8P

CM

Figure 3. AC-Coupled Baseband Interface

low-frequencyhigh-passcornertogetherwiththeLT5558’s

differential input impedance of 3kΩ. Usually, capacitors

C1 to C4 will be chosen equal and in such a way that the

200

BBMI

–3dBcornerfrequencyf

=1/(π•R ,

•C1)ismuch

–3dB

IN DIFF

5558 F01

GND

lower than the lowest baseband frequency.

Figure 1. Simplifed Circuit Schematic of the LT5558

(Only I-Half is Drawn)

DC coupling between the DAC outputs and the LT5558

baseband inputs is recommended, because AC coupling

willintroducealow-frequencytimeconstantthatmayaffect

the signal integrity. Active level shifters may be required to

adapt the common mode level of the DAC outputs to the

common mode input voltage of the LT5558. Such circuits

may, however, suffer degraded LO leakage performance

as small DC offsets and variations over temperature

accumulate. A better scheme is shown in Figure 16, where

feedback is used to track out these variations.

If the I/Q signals are DC-coupled to the LT5558, it is

important that the applied common-mode voltage level

of the I and Q inputs is about 2.1V in order to properly

bias the LT5558. Some I/Q generators allow setting the

common-mode voltage independently. In this case, the

common-modevoltageofthosegeneratorsmustbesetto

1.05VtomatchtheLT5558internalbiaswheretheinternal

DC voltage of the signal generators is set to 2.1V due to

the source-load voltage division (See Figure 2).

LO Section

The LT5558 baseband inputs should be driven differen-

tially, otherwise, the even-order distortion products will

degrade the overall linearity severely. Typically, a DAC

will be the signal source for the LT5558. A pulse-shaping

ﬁlter should be placed between the DAC outputs and the

LT5558’s baseband inputs.

The internal LO input ampliﬁer performs single-ended to

differential conversion of the LO input signal. Figure 4

shows the equivalent circuit schematic of the LO input.

The internal, differential LO signal is split into in-phase

and quadrature (90° phase shifted) signals that drive

LO buffer sections. These buffers drive the double bal-

anced I and Q mixers. The phase relationship between

An AC-coupled baseband interface with the LT5558 is

drawn in Figure 3. Capacitors C1 to C4 will introduce a

V

CC

GENERATOR

LT5558

1.5kΩ

50Ω

1.05V

2.1V

DC

CC

20pF

50Ω

LO

INPUT

+

DC

2.1V

DC

–

≈ 50Ω

5558 F02

5558 F04

Figure 2. DC Voltage Levels for a Generator Programmed at

1.05VDC for a 50Ω Load and the LT5558 as a Load

Figure 4. Equivalent Circuit Schematic of the LO Input

5558fa

9

LT5558

APPLICATIONS INFORMATION

the LO input and the internal in-phase LO and quadra-

ture LO signals is ﬁxed, and is independent of start-up

conditions. The phase shifters are designed to deliver

accurate quadrature signals for an LO frequency near

900MHz. For frequencies signiﬁcantly below 750MHz

or above 1.1GHz, the quadrature accuracy will diminish,

causing the image rejection to degrade. The LO pin input

impedance is about 50Ω and the recommended LO input

Table 2. LO Port Input Impedance vs Frequency for EN = Low

and P = 0dBm

LO

FREQUENCY

(MHz)

S

11

MAG

0.464

0.545

0.630

0.696

0.737

0.760

0.768

0.764

ANGLE

79.7

INPUT IMPEDANCE (Ω)

37.3 + j43.4

500

600

72.1 + j74.8

42.1

700

184.7 + j77.8

203.6 – j120.8

75.9 – j131.5

36.7 – j99.0

11.7

800

–12.7

–32.6

–48.8

–62.4

–74.3

power window is –2dBm to + 2dBm. For P < –2dBm, the

900

LO

gain, OIP2, OIP3, dynamic-range (in dBc/Hz) and image

1000

1100

1200

rejection will degrade, especially at T = 85°C.

23.4 – j77.4

A

17.8 – j62.8

HarmonicspresentontheLOsignalcandegradetheimage

rejection,becausetheyintroduceasmallexcessphaseshift

in the internal phase splitter. For the second (at 1.8GHz)

and third harmonics (at 2.7GHz) at –20dBc level, the in-

troduced signal at the image frequency is about –61dBc

or lower, corresponding to an excess phase shift much

less than 1 degree. For the second and third harmonics at

–10dBc, still the introduced signal at the image frequency

isabout–51dBc. Higherharmonicsthanthethirdwillhave

less impact. The LO return loss typically will be better than

10dB over the 750MHz to 1GHz range. Table 1 shows the

LO port input impedance vs. frequency. The return loss

RF Section

Afterup-conversion,theRFoutputsoftheIandQmixersare

combined. An on-chip balun performs internal differential

tosingle-endedoutputconversion,whiletransformingthe

output signal impedance to 50Ω. Table 3 shows the RF

port output impedance vs frequency.

Table 3. RF Port Output Impedance vs Frequency for EN = High

and P = 0dBm

LO

FREQUENCY

(MHz)

S

22

OUTPUT IMPEDANCE (Ω)

22.8 + j4.9

MAG

0.380

0.283

0.159

0.045

0.101

0.168

0.206

0.224

ANGLE

165.8

141.9

111.8

37.2

S

on the LO port can be improved at lower frequencies

500

600

11

by adding a shunt capacitor.

30.2 + j11.4

700

42.7 + j12.9

Table 1. LO Port Input Impedance vs Frequency for EN = High

and P = 0dBm

LO

800

53.7 + j3.0

FREQUENCY

(MHz)

S

11

900

52.0 – j10.1

–73.2

–99.7

–116.1

–128.9

MAG

0.101

0.127

0.180

0.237

0.285

0.295

0.318

ANGLE

81.3

INPUT IMPEDANCE (Ω)

50.5 + j10.3

63.8 + j4.6

1000

1100

1200

44.8 – j15.2

500

600

39.1 – j15.1

16.0

35.7 – j13.1

700

70.7 – j6.9

–15.2

–34.9

–50.5

–61.4

–69.1

–78.0

800

70.7 – j20.3

63.9 – j30.6

56.7 – j32.2

52.1 – j31.3

46.3 – j32.0

900

1000

1100

1200

The input impedance of the LO port is different if the part

is in shutdown mode. The LO input impedance for EN =

Low is given in Table 2.

5558fa

10

LT5558

APPLICATIONS INFORMATION

The RF output S22 with no LO power applied is given in

Note that an ESD diode is connected internally from the

RF output to the ground. For strong output RF signal

levels (higher than 3dBm), this ESD diode can degrade

the linearity performance if an external 50Ω termination

impedanceisconnecteddirectlytoground.Topreventthis,

a coupling capacitor can be inserted in the RF output line.

This is strongly recommended during 1dB compression

measurements.

Table 4.

Table 4. RF Port Output Impedance vs Frequency for EN = High

and No LO Power Applied

FREQUENCY

(MHz)(

S

22

MAG

0.367

0.257

0.118

0.019

0.118

0.178

0.209

0.222

ANGLE

165.5

OUTPUT IMPEDANCE (Ω)

23.4 + j5.0

500

600

31.7 + j10.7

44.1 + j9.5

142.0

700

116.1

Enable Interface

800

50.9 – j1.7

–60.8

Figure 6 shows a simpliﬁed schematic of the EN pin inter-

face. The voltage necessary to turn on the LT5558 is 1V.

To disable (shut down) the chip, the enable voltage must

be below 0.5V. If the EN pin is not connected, the chip is

disabled. This EN = Low condition is guaranteed by the

75kΩ on-chip pull-down resistor.

900

46.8 – j11.1

40.8 – j13.5

36.6 – j12.6

34.3 – j10.5

–99.3

1000

1100

1200

–115.5

–128.1

–139.0

For EN = Low the S is given in Table 5.

22

It is important that the voltage at the EN pin does not

To improve S for lower frequencies, a series capacitor

22

exceed V by more than 0.5V. If this should occur, the

CC

can be added to the RF output. At higher frequencies, a

full-chip supply current could be sourced through the EN

pin ESD protection diodes, which are not designed for this

purpose. Damage to the chip may result.

shunt inductor can improve the S . Figure 5 shows the

22

equivalent circuit schematic of the RF output.

Table 5. RF Port Output Impedance vs Frequency for EN = Low

V

FREQUENCY

(MHz)

S

22

CC

MAG

0.398

0.311

0.200

0.090

0.092

0.158

0.203

0.225

ANGLE

166.5

142.9

112.9

58.1

OUTPUT IMPEDANCE (Ω)

21.8 + j4.8

500

600

EN

28.4 + j11.8

40.2 + j15.4

54.3 + j8.3

75k

25k

700

800

900

56.7 – j7.2

–43.3

–83.8

–105.0

–120.0

5558 F06

1000

1100

1200

49.2 – j15.8

41.9 – j17.0

37.3 – j15.3

Figure 6. EN Pin Interface

Evaluation Board

Figure 7 shows the evaluation board schematic. A good

ground connection is required for the LT5558’s Exposed

Pad. If this is not done properly, the RF performance will

degrade.Additionally,theExposedPadprovidesheatsink-

ing for the part and minimizes the possibility of the chip

overheating. R1 (optional) limits the EN pin current in the

V

CC

21pF

RF

OUTPUT

1pF

7nH

52Ω

5558 F05

event that the EN pin is pulled high while the V inputs

CC

are low. The application board PCB layouts are shown in

Figures 8 and 9.

Figure 5. Equivalent Circuit Schematic of the RF Output

5558fa

11

LT5558

APPLICATIONS INFORMATION

J1

J2

BBIM

BBIP

V

CC

C2

16

BBMI GND BBPI

EN

15

14

13

R1

100nF

V

CC

100

1

2

3

4

12

11

10

9

GND

V

EN

J3

CC

RF

OUT

GND

LO

RF

GND

J4

LO

IN

LT5558

GND

17

BBMQ GND BBPQ

V

CC

5

6

7

8

C1

100nF

J5

BBQM

J6

GND

BBQP

BOARD NUMBER: DC1017A

Figure 9. Bottom Side of Evaluation Board

5558 F07

Figure 7. Evaluation Circuit Schematic

If the output power is high, the ACPR will be limited by the

linearity performance of the part. If the output power is

low, the ACPR will be limited by the noise performance of

the part. In the middle, an optimum ACPR is obtained.

BecauseoftheLT5558’sveryhighdynamic-range,thetest

equipment can limit the accuracy of the ACPR measure-

ment. Consult Design Note 375 or the factory for advice

on ACPR measurement if needed.

The ACPR performance is sensitive to the amplitude mis-

match of the BBIP and BBIM (or BBQP and BBQM) inputs.

This is because a difference in AC current amplitude will

giverisetoadifferenceinamplitudebetweentheeven-order

harmonic products generated in the internal V-I converter.

As a result, they will not cancel out entirely. Therefore, it

is important to keep the amplitudes at the BBIP and BBIM

(or BBQP and BBQM) inputs as equal as possible.

LO feedthrough and image rejection performance may

be improved by means of a calibration procedure. LO

feedthrough is minimized by adjusting the differential DC

offset at the I and the Q baseband inputs. Image rejec-

tion can be improved by adjusting the gain and the phase

difference between the I and the Q baseband inputs. The

LO feedthrough and Image Rejection can also change

as a function of the baseband drive level, as depicted in

Figure 14.

Figure 8. Component Side of Evaluation Board

Application Measurements

TheLT5558isrecommendedforbase-stationapplications

using various modulation formats. Figure 10 shows a

typical application.

Figure 11 shows the ACPR performance for CDMA2000

usingoneandthreechannelmodulation.Figures12and13

illustrate the 1- and 3-channel CDMA2000 measurement.

To calculate ACPR, a correction is made for the spectrum

analyzer noise ﬂoor (Application Note 99).

5558fa

12

LT5558

APPLICATIONS INFORMATION

5V

BASEBAND

GENERATOR

V

100nF

CC 8, 13

×2

LT5558

14

RF = 600MHz

TO 1100MHz

I-DAC

V-I

I-CHANNEL

16

11

PA

0°

90°

1

EN

BALUN

Q-CHANNEL

V-I

7

5

Q-DAC

3

VCO/SYNTHESIZER

2, 4, 6, 9, 10, 12, 15, 17

5558 F10

Figure 10. 600MHz to 1.1GHz Direct Conversion Transmitter Application

–40

–50

–60

–70

–110

–120

–130

–140

–30

–40

DOWNLINK TEST

MODEL 64 DPCH

DOWNLINK

TEST

MODEL

–50

3-CH ACPR

3-CH ALTCPR

64 DPCH

–60

–70

1-CH ACPR

1-CH NOISE

–80

UNCORRECTED

SPECTRUM

–90

–100

–110

1-CH ALTCPR

3-CH NOISE

–80

–90

–150

–160

SPECTRUM ANALYSER NOISE FLOOR

CORRECTED SPECTRUM

–120

–130

–30

–20

–15

–10

–5

0

–25

894

896 900

898

902

904

906

RF OUTPUT POWER PER CARRIER (dBm)

RF FREQUENCY (MHz)

5558 TA01b

5558 F13

Figure 11. ACPR, ALTCPR and Noise for CDMA2000 Modulation

Figure 13. 3-Channel CDMA2000 Spectrum

Example: RFID Application

–30

DOWNLINK TEST

–40

–50

–60

–70

–80

MODEL 64 DPCH

In Figure 15 the interface between the LTC1565 (U2, U3)

and the LT5558 is designed for RFID applications. The

LTC1565 is a seventh-order, 650kHz, continuous-time,

linear-phase, lowpass ﬁlter. The optimum output com-

mon-mode level of the LTC1565 is about 2.5V and the

optimum input common-mode level of the LT5558 is

around 2.1V and is temperature dependent. To adapt the

common-mode level of the LTC1565 to the LT5558, a level

shift network consisting of R1 to R6 and R11 to R16 is

used. The output common-mode level of the LTC1565 can

be adjusted by overriding the internally generated voltage

on pin 3 of the LTC1565.

–90 UNCORRECTED

SPECTRUM

CORRECTED

SPECTRUM

–100

–110

–120

–130

SPECTRUM ANALYSER NOISE FLOOR

896.25 897.75 899.25 900.75 902.25 903.75

RF FREQUENCY (MHz)

5558 F12

Figure 12. 1-Channel CDMA2000 Spectrum

5558fa

13

LT5558

APPLICATIONS INFORMATION

U4’s stability while driving the large supply decoupling

capacitors C3 and C4. This corrected common-mode

voltage is applied to the common-mode input pins of U2

and U3 (pins 3). This results in a positive feedback loop

for the common mode voltage with a loop gain of about

-10dB.Thistechniqueensuresthatthecurrentcompliance

on the baseband input pins of the LT5558 is not exceeded

undersupplyvoltageortemperatureextremes,andinternal

diode voltage shifts or combinations of these. The core

current of the LT5558 is thus maintained at its designed

level for optimum performance. The recommended com-

mon-mode voltage applied to the inputs of the LTC1565

is about 2V. Resistor tolerances are recommended 1%

accuracy or better. The total current consumption is about

160mAandthenoiseﬂoorat20MHzoffsetis–147dBm/Hz

10

V

= 5V

CC

–40°C

EN = HIGH

P

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

RF

85°C

25°C

f

= 900MHz,

LO

BBI

BBQ

= 2MHz, 0°

= 2MHz, 90°

= f + f

RF BB LO

LOFT

P

= 0dBm

LO

85°C

–40°C

IR

–40°C

25°C

0

1

2

3

4

5

I AND Q BASEBAND VOLTAGE (V

)

P-P,DIFF

5558 F14

Figure 14. LO Feedthrough and Image Rejection vs

Baseband Drive Voltage After Calibration at 25°C

The common-mode voltage on the LT5558 is sampled

using resistors R7, R8, R17 and R18 and shifted up to

about 2.5V using resistor R9. Op amp U4 compensates

for the gain loss in the resistor networks and provides a

low-ohmic drive to steer the common-mode input pins

of U2 and U3. Resistors R20 and R21 improve op amp

with 3.7dBm RF output power. For a 2V

baseband

PP, DIFF

input swing, the output power at f + f is 1.6dBm

LO

BB

and the third harmonic at f – 3f is –48.6dBm. For a

LO

BB

2.6V

input, the output power at f + f is 3.8dBm

PP, DIFF

LO BB

and the third harmonic at f – 3f is –40.5dBm.

LO

BB

RF = 3dBm MAX

V

4.5V to 5.25V

CC

R24

3.32k

R22

22.1k

–

U4

+

4

3

LT1797

5

2

1

R22

22.1k

R20

249Ω

R5

3.57k

R6

R9

R16

3.57k

R15

3.57k

R21

249Ω

3.57k 88.7k

C1, C2

2 × 0.1µF

8, 13 11

1

R11

499Ω

R1

499Ω

V

RF EN

U2

U3

CC

BBPI

2.1V

DC

2.1V

14

16

7

5

1

2

8

7

DC

8

7

1

2

+IN

–IN

+OUT

–OUT

BBPQ

+OUT

+IN

–IN

BB

SOURCE

BB

SOURCE

R3

3.01k

R7

49.9k

R17

49.9k

R13

–OUT

3.01k

U1

LTC1565-31

2.5V

DC

2.5V

DC

2.5V

DC

2.5V

DC

LT5558

R4

3.01k

R8

49.9k

3

4

6

5

6

5

3

4

R18

49.9k

R14

GND

V–

V+

SHDN

GND

V–

R2

499Ω

R12

499Ω

C3

0.1µF

C4

0.1µF

3.01k

SHDN

BBMQ

LO

BBMI

GND

2.1V

DC

5558 F16

2, 4, 6, 9, 10

12, 15, 17

3

Figure 15. Baseband Interface Schematic of the LTC1565 with the LT5558 for RFID applications.

5558fa

14

LT5558

PACKAGE DESCRIPTION

UF Package

16-Lead Plastic QFN (4mm × 4mm)

(Reference LTC DWG # 05-08-1692)

0.72 0.05

4.35 0.05

2.90 0.05

2.15 0.05

(4 SIDES)

PACKAGE OUTLINE

0.30 0.05

0.65 BSC

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

BOTTOM VIEW—EXPOSED PAD

PIN 1 NOTCH R = 0.20 TYP

OR 0.35 × 45° CHAMFER

0.75 0.05

R = 0.115

TYP

4.00 0.10

(4 SIDES)

15

16

0.55 0.20

PIN 1

TOP MARK

(NOTE 6)

1

2

2.15 0.10

(4-SIDES)

(UF16) QFN 10-04

0.200 REF

0.30 0.05

0.65 BSC

0.00 – 0.05

NOTE:

1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)

2. DRAWING NOT TO SCALE

3. ALL DIMENSIONS ARE IN MILLIMETERS

4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE

MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE

5. EXPOSED PAD SHALL BE SOLDER PLATED

6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION

ON THE TOP AND BOTTOM OF PACKAGE

5558fa

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-

tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

15

LT5558

RELATED PARTS

PART NUMBER DESCRIPTION

COMMENTS

Infrastructure

LT5511

LT5512

High Linearity Upconverting Mixer

DC to 3GHz High Signal Level Downconverting

Mixer

RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer

DC to 3GHz, 17dBm IIP3, Integrated LO Buffer

LT5514

LT5515

LT5516

Ultralow Distortion, IF Ampliﬁer/ADC Driver with 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range

Digitally Controlled Gain

1.5GHz to 2.5GHz Direct Conversion Quadrature 20dBm IIP3, Integrated LO Quadrature Generator

Demodulator

0.8GHz to 1.5GHz Direct Conversion Quadrature 21.5dBm IIP3, Integrated LO Quadrature Generator

Demodulator

LT5517

LT5518

40MHz to 900MHz Quadrature Demodulator

21dBm IIP3, Integrated LO Quadrature Generator

1.5GHz to 2.4GHz High Linearity Direct

Quadrature Modulator

22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended LO and RF

Ports, 4-Ch W-CDMA ACPR = –64dBc at 2.14GHz

LT5519

LT5520

LT5521

LT5522

LT5524

LT5526

LT5527

LT5528

LT5568

LT5572

0.7GHz to 1.4GHz High Linearity Upconverting

Mixer

1.3GHz to 2.3GHz High Linearity Upconverting

Mixer

10MHz to 3700MHz High Linearity Upconverting 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO

Mixer

600MHz to 2.7GHz High Signal Level

Downconverting Mixer

Low Power, Low Distortion ADC Driver with

Digitally Programmable Gain

17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,

Single-Ended LO and RF Ports Operation

15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,

Single-Ended LO and RF Ports Operation

Port Operation

4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF

and LO Ports

450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control

High Linearity, Low Power Downconverting Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I = 28mA,

CC

–65dBm LO-RF Leakage

400MHz to 3.7GHz High Signal Level

Downconverting Mixer

1.5GHz to 2.4GHz High Linearity Direct

Quadrature Modulator

700MHz to 1050MHz High Linearity Direct

Quadrature Modulator

1.5GHz to 2.5GHz High Linearity Direct

Quadrature Modulator

IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, I = 78mA

CC

21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5V Baseband Interface,

DC

4-Ch W-CDMA ACPR = –66dBc at 2.14GHz

22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5V Baseband

DC

Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz

21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5V Baseband

DC

Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz

RF Power Detectors

LT5504

800MHz to 2.7GHz RF Measuring Receiver

80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply

LTC^®5505

LTC5507

LTC5508

LTC5509

LTC5530

LTC5531

LTC5532

LT5534

RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply

100kHz to 1000MHz RF Power Detector

300MHz to 7GHz RF Power Detector

300MHz to 3GHz RF Power Detector

100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply

44dB Dynamic Range, Temperature Compensated, SC70 Package

36dB Dynamic Range, Low Power Consumption, SC70 Package

300MHz to 7GHz Precision RF Power Detector

Precision V

Offset Control, Shutdown, Adjustable Gain

Offset Control, Shutdown, Adjustable Offset

Offset Control, Adjustable Gain and Offset

OUT

50MHz to 3GHz Loq RF Power Detector with

60dB Dynamic Range

1dB Output Variation over Temperature, 38ns Response Time

LTC5536

Precision 600MHz to 7GHz RF Detector with Fast 25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to

Comparater

+12dBm Input Range

LT5537

Wide Dynamic Range Loq RF/IF Detector

Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply

High Speed ADCs

LTC2220-1

12-Bit, 185Msps ADC

Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz Full

Power BW

LTC2249

LTC2255

14-Bit, 80Msps ADC

14-Bit, 125Msps ADC

Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR

Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz Full

Power BW

5558fa

LT 0706 REV A • PRINTED IN USA

16 ^{LinearTechnology Corporation}

1630 McCarthy Blvd., Milpitas, CA 95035-7417

●

(408) 432-1900 FAX: (408) 434-0507 www.linear.com


型号：	LT5558EUF#TRBPF
厂家：	Linear
描述：	IC TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16, 4 X 4 MM, LEAD FREE, PLASTIC, MO-220WGGC, QFN-16, Cellular Telephone Circuit 蜂窝
文件：	总16页 (文件大小：315K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LT5558EUF#TRBPF [Linear]

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