LTC1625IS#TR [Linear]

LTC1625 - No RSENSE Current Mode Synchronous Step-Down Switching Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C;
LTC1625IS#TR
型号: LTC1625IS#TR
厂家: Linear    Linear
描述:

LTC1625 - No RSENSE Current Mode Synchronous Step-Down Switching Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C

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LTC1625  
No R  
TM Current Mode  
SENSE  
Synchronous Step-Down  
Switching Regulator  
U
DESCRIPTION  
FEATURES  
The LTC®1625 is a synchronous step-down switching  
regulator controller that drives external N-Channel power  
MOSFETs using few external components. Current mode  
control with MOSFET VDS sensing eliminates the need for  
a sense resistor and improves efficiency. The frequency of  
a nominal 150kHz internal oscillator can be synchronized  
to an external clock over a 1.5:1 frequency range.  
Burst ModeTM operation at low load currents reduces  
switchinglossesandlowdropoutoperationextendsoper-  
ating time in battery-powered systems. A forced continu-  
ous mode control pin can assist secondary winding  
regulation by disabling Burst Mode operation when the  
main output is lightly loaded.  
Highest Efficiency Current Mode Controller  
No Sense Resistor Required  
Stable High Current Operation  
Dual N-Channel MOSFET Synchronous Drive  
Wide VIN Range: 3.7V to 36V  
Wide VOUT Range: 1.19V to VIN  
±1% 1.19V Reference  
Programmable Fixed Frequency with Injection Lock  
Very Low Drop Out Operation: 99% Duty Cycle  
Forced Continuous Mode Control Pin  
Optional Programmable Soft Start  
Pin Selectable Output Voltage  
Foldback Current Limit  
Output Overvoltage Protection  
Fault protection is provided by foldback current limiting  
and an output overvoltage comparator. An external ca-  
pacitor attached to the RUN/SS pin provides soft start  
capability for supply sequencing. A wide supply range  
allows operation from 3.7V (3.9V for LTC1625I) to 36V at  
the input and 1.19V to VIN at the output.  
Logic Controlled Micropower Shutdown: IQ < 30µA  
Available in 16-Lead Narrow SSOP and SO Packages  
U
APPLICATIONS  
Notebook and Palmtop Computers, PDAs  
, LTC and LT are registered trademarks of Linear Technology Corporation.  
No RSENSE and Burst Mode are trademarks of Linear Technology Corporation.  
Cellular Telephones and Wireless Modems  
Battery Chargers  
Distributed Power  
U
TYPICAL APPLICATION  
Efficiency vs Load Current  
100  
V
V
= 10V  
IN  
IN  
V
= 5V  
5V TO  
28V  
OUT  
SYNC  
V
IN  
C
IN  
+
RUN/SS  
TK  
10µF  
30V  
×2  
C
SS  
M1  
90  
80  
70  
60  
TG  
0.1µF  
Si4410DY  
L1  
10µH  
V
= 3.3V  
OUT  
LTC1625  
V
OUT  
I
SW  
TH  
C
0.22µF  
3.3V  
B
R
BOOST  
C
C
+
OUT 4.5A  
D1  
D
10k  
B
100µF  
10V  
MBRS140T3  
C
VCC  
4.7µF  
CMDSH-3  
V
PROG  
INTV  
CC  
C
C
×3  
+
2.2nF  
M2  
Si4410DY  
SGND  
BG  
V
PGND  
OSENSE  
1625 F01  
0.01  
0.1  
1
10  
LOAD CURRENT (A)  
Figure 1. High Efficiency Step-Down Converter  
1625 TA01  
1
LTC1625  
W W U W  
W
U
ABSOLUTE MAXIMUM RATINGS  
PACKAGE/ORDER I FOR ATIO  
(Note 1)  
ORDER PART  
NUMBER  
Input Supply Voltage (VIN, TK) ................. 36V to 0.3V  
Boosted Supply Voltage (BOOST)............. 42V to 0.3V  
Boosted Driver Voltage (BOOST – SW) ...... 7V to 0.3V  
Switch Voltage (SW).....................................36V to 5V  
EXTVCC Voltage ...........................................7V to 0.3V  
ITH Voltage................................................2.7V to 0.3V  
FCB, RUN/SS, SYNC Voltages .....................7V to 0.3V  
TOP VIEW  
EXTV  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
V
CC  
IN  
SYNC  
RUN/SS  
FCB  
TK  
LTC1625CGN  
LTC1625CS  
LTC1625IGN  
LTC1625IS  
SW  
TG  
I
BOOST  
TH  
SGND  
INTV  
BG  
CC  
V
OSENSE  
V
OSENSE, VPROG Voltages ........(INTVCC + 0.3V) to 0.3V  
V
PGND  
PROG  
Peak Driver Output Current < 10µs (TG, BG) ............ 2A  
INTVCC Output Current ........................................ 50mA  
Operating Ambient Temperature Range  
GN PACKAGE  
S PACKAGE  
16-LEAD PLASTIC SSOP 16-LEAD PLASTIC SO  
TJMAX = 125°C, θJA = 130°C/W (GN)  
TJMAX = 125°C, θJA = 110°C/W (S)  
LTC1625C............................................... 0°C to 70°C  
LTC1625I (Note 5).............................. 40°C to 85°C  
Junction Temperature (Note 2)............................. 125°C  
Storage Temperature Range ................ 65°C to 150°C  
Lead Temperature (Soldering, 10 sec)................. 300°C  
Consult factory for Military grade parts.  
ELECTRICAL CHARACTERISTICS TA = 25°C, VIN = 15V unless otherwise noted.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Main Control Loop  
I V  
IN OSENSE  
Feedback Current  
V
PROG  
Pin Open, I = 1.19V (Note 3)  
10  
50  
nA  
TH  
V
Regulated Output Voltage  
1.19V (Adjustable) Selected  
3.3V Selected  
I
= 1.19V (Note 3)  
TH  
OUT  
V
V
V
Pin Open  
= 0V  
1.178  
3.220  
4.900  
1.190  
3.300  
5.000  
1.202  
3.380  
5.100  
V
V
V
PROG  
PROG  
PROG  
5V Selected  
= INTV  
CC  
V
V
V
Reference Voltage Line Regulation  
V
V
= 3.6V to 20V, I = 1.19V (Note 3),  
0.001  
0.01  
%/V  
LINEREG  
IN  
TH  
Pin Open  
PROG  
Output Voltage Load Regulation  
I
I
= 2V (Note 3)  
= 0.5V (Note 3)  
– 0.020  
0.035  
0.2  
0.2  
%
%
LOADREG  
TH  
TH  
Forced Continuous Threshold  
Forced Continuous Current  
Output Overvoltage Lockout  
V
V
V
Ramping Negative  
= 1.19V  
1.16  
1.24  
1.19  
–1  
1.22  
–2  
V
µA  
V
FCB  
FCB  
FCB  
I
FCB  
V
Pin Open  
1.28  
1.32  
OVL  
PROG  
I
V
Input Current  
PROG  
PROG  
3.3V V  
V
PROG  
V
PROG  
= 0V  
= 5V  
3.5  
3.5  
–7  
7
µA  
µA  
OUT  
5V V  
OUT  
I
Input DC Supply Current  
Normal Mode  
EXTV = 5V (Note 4)  
CC  
Q
500  
15  
µA  
µA  
Shutdown  
V
= 0V, 3.7V < V < 15V  
30  
2
RUN/SS  
IN  
V
RUN/SS Pin Threshold  
0.8  
1.2  
120  
1.4  
2.5  
150  
V
µA  
RUN/SS  
I
Soft Start Current Source  
Maximum Current Sense Threshold  
V
V
= 0V  
4
RUN/SS  
RUN/SS  
V  
= 1V, V  
Pin Open  
PROG  
170  
mV  
SENSE(MAX)  
OSENSE  
TG Transition Time  
Rise Time  
TG t  
TG t  
C
LOAD  
C
LOAD  
= 3300pF  
= 3300pF  
50  
50  
150  
150  
ns  
ns  
R
F
Fall Time  
2
LTC1625  
ELECTRICAL CHARACTERISTICS TA = 25°C, VIN = 15V unless otherwise noted.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
BG Transition Time  
Rise Time  
BG t  
BG t  
C
C
= 3300pF  
= 3300pF  
50  
50  
150  
150  
ns  
ns  
R
F
LOAD  
LOAD  
Fall Time  
Internal V Regulator  
CC  
V
V
V
V
Internal V Voltage  
6V < V < 30V, V = 4V  
EXTVCC  
5.0  
5.2  
–1  
5.4  
–2  
V
%
INTVCC  
LDOINT  
LDOEXT  
EXTVCC  
CC  
IN  
INTV Load Regulation  
I
I
I
= 20mA, V  
= 20mA, V  
= 20mA, V  
= 4V  
CC  
CC  
CC  
CC  
EXTVCC  
EXTVCC  
EXTVCC  
EXTV Voltage Drop  
= 5V  
180  
4.7  
300  
mV  
V
CC  
EXTV Switchover Voltage  
Ramping Positive  
4.5  
CC  
Oscillator  
f
Oscillator Freqency  
135  
150  
1.5  
0.9  
50  
165  
1.2  
kHz  
OSC  
f /f  
Maximum Synchronized Frequency Ratio  
SYNC Pin Threshold (Figure 4)  
SYNC Pin Input Resistance  
H
OSC  
V
Ramping Positive  
V
SYNC  
R
kΩ  
SYNC  
The  
denotes specifications which apply over the full operating  
Note 3: The LTC1625 is tested in a feedback loop that adjusts V  
to  
OSENSE  
temperature range.  
achieve a specified error amplifier output voltage (I ).  
TH  
Note 1: Absolute Maximum Ratings are those values beyond which the life  
of a device may be impaired.  
Note 4: Typical in application circuit with EXTV tied to V  
= 5V,  
CC  
OUT  
I
= 0A and FCB = INTV . Dynamic supply current is higher due  
OUT CC  
to the gate charge being delivered at the switching frequency. See  
Applications Information.  
Note 2: T is calculated from the ambient temperature T and power  
J
A
dissipation P according to the following formula:  
D
Note 5: Minimum input supply voltage is 3.9V at 40°C for industrial  
grade parts.  
LTC1625CGN/LTC1625IGN: T = T + (P • 130°C/W)  
J
A
D
LTC1625CS/LTC1625IS: T = T + (P • 110°C/W)  
J
A
D
3
LTC1625  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Efficiency vs Input Voltage,  
VOUT = 3.3V  
Efficiency vs Input Voltage,  
Efficiency vs Load Current  
VOUT = 5V  
100  
95  
90  
85  
80  
75  
70  
100  
95  
90  
85  
80  
75  
70  
100  
90  
80  
70  
60  
50  
FIGURE 1 CIRCUIT  
= 2A  
FIGURE 1 CIRCUIT  
BURST  
MODE  
I
LOAD  
I
= 2A  
OPERATION  
LOAD  
CONTINUOUS  
MODE  
I
= 200mA  
LOAD  
I
= 200mA  
LOAD  
V
V
= 10V  
OUT  
EXTV = V  
CC  
IN  
= 5V  
OUT  
0
10  
15  
20  
25  
30  
0
10  
15  
20  
25  
30  
0.001  
0.01  
0.1  
LOAD CURRENT (A)  
1
5
5
10  
INPUT VOLTAGE (V)  
INPUT VOLTAGE (V)  
1625 G02  
1625 G02  
1625 G01  
ITH Pin Voltage vs Load Current  
Load Regulation  
3.0  
2.5  
2.0  
1.5  
400  
300  
200  
100  
0
0
0.05  
0.10  
0.15  
0.20  
0.25  
FIGURE 1 CIRCUIT  
FIGURE 1 CIRCUIT  
= 5V – 5% DROP  
FIGURE 1 CIRCUIT  
V
V
= 20V  
= 5V  
V
IN  
OUT  
OUT  
CONTINUOUS  
MODE  
1.0  
0.5  
0
Burst Mode  
OPERATION  
4
6
7
0
1
2
3
4
5
0
1
2
3
5
0
1
3
4
5
2
LOAD CURRENT (A)  
LOAD CURRENT (A)  
LOAD CURRENT (A)  
1625 G05  
1625 G04  
1625 G06  
Input and Shutdown Current  
vs Input Voltage  
INTVCC Load Regulation  
1000  
800  
600  
400  
200  
0
50  
40  
30  
20  
10  
0
0
500  
400  
300  
200  
100  
0
EXTV OPEN  
CC  
0.5  
–1.0  
–1.5  
2.0  
2.5  
SHUTDOWN  
EXTV = 5V  
CC  
0
5
10  
15  
20  
25  
30  
35  
0
10  
30  
40  
50  
20  
0
10  
20  
30  
40  
50  
INPUT VOLTAGE (V)  
INTV LOAD CURRENT (mA)  
INTV LOAD CURRENT (mA)  
CC  
CC  
1625 G07  
1625 G08  
1625 G09  
4
LTC1625  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Oscillator Frequency  
vs Temperature  
Maximum Current Sense Voltage  
vs Temperature  
Maximum Current Sense Voltage  
vs Duty Cycle  
200  
150  
100  
50  
300  
250  
200  
150  
160  
155  
150  
145  
SYNC = 1.5V  
SYNC = 0V  
100  
50  
0
140  
0
40 –15 10  
35  
60  
85 110 135  
110 135  
0
0.2  
0.4  
0.5  
0.8  
1.0  
40 –15  
10  
35  
60  
TEMPERATURE (°C)  
85  
TEMPERATURE (°C)  
DUTY CYCLE  
1625 G11  
1625 G10  
1625 G12  
RUN/SS Pin Current  
vs Temperature  
Soft Start:  
FCB Pin Current vs Temperature  
Load Current vs Time  
0
–1  
–2  
–3  
–4  
–5  
0
0.25  
0.50  
0.75  
INDUCTOR  
CURRENT  
2A/DIV  
RUN/SS  
2V/DIV  
–1.00  
–1.25  
–1.50  
20ms/DIV  
VIN = 20V  
1625 F06  
VOUT = 5V  
RLOAD = 1Ω  
FIGURE 1 CIRCUIT  
60  
TEMPERATURE (°C)  
110 135  
–40 –15 10  
35  
60  
85 110 135  
40 –15  
10  
35  
85  
TEMPERATURE (°C)  
1625 G14  
1625 G13  
Transient Response  
(Burst Mode Operation)  
Burst Mode Operation  
Transient Response  
VOUT  
50mV/DIV  
VOUT  
50mV/DIV  
VOUT  
50mV/DIV  
ITH  
100mV/DIV  
200µs/DIV  
1625 F07  
500µs/DIV  
1625 F08  
50µs/DIV  
1625 F09  
VIN = 20V  
VOUT = 5V  
VIN = 20V  
V
IN = 20V  
VOUT = 5V  
VOUT = 5V  
I
LOAD = 1A TO 4A  
ILOAD = 50mA  
FIGURE 1 CIRCUIT  
ILOAD = 50mA TO 1A  
FIGURE 1 CIRCUIT  
FIGURE 1 CIRCUIT  
5
LTC1625  
U
U
U
PIN FUNCTIONS  
EXTVCC (Pin 1): INTVCC Switch Input. When the EXTVCC  
voltage is above 4.7V, the switch closes and supplies  
INTVCC power from EXTVCC. Do not exceed 7V at this pin.  
Leaving VPROG open allows the output voltage to be set by  
an external resistive divider between the output and  
VOSENSE  
.
SYNC (Pin 2): Synchronization Input for Internal Oscilla-  
tor.Theoscillatorwillnominallyrunat150kHzwhenopen,  
225kHz when tied above 1.2V, and will lock over a 1.5:1  
clock frequency range.  
PGND (Pin 9): Driver Power Ground. Connects to the  
source of the bottom N-channel MOSFET, the (–) terminal  
of CVCC and the (–) terminal of CIN.  
BG (Pin 10): Bottom Gate Drive. Drives the gate of the  
bottom N-channel MOSFET between ground and INTVCC.  
RUN/SS (Pin 3): Run Control and Soft Start Input. A  
capacitor to ground at this pin sets the ramp time to full  
current output (approximately 1s/µF). Forcing this pin  
below 1.4V shuts down the device.  
INTVCC (Pin 11): Internal 5.2V Regulator Output. The  
driver and control circuits are powered from this voltage.  
Decouple this pin to power ground with a minimum of  
4.7µF tantalum capacitance.  
FCB (Pin 4): Forced Continuous Input. Tie this pin to  
ground to force synchronous operation at low load, to a  
resistive divider from the secondary output when using  
a secondary winding, or to INTVCC to enable Burst Mode  
operation at low load.  
BOOST (Pin 12): Topside Floating Driver Supply. The (+)  
terminalofthebootstrapcapacitorconnectshere.Thispin  
swings from a diode drop below INTVCC to VIN + INTVCC.  
TG (Pin 13): Top Gate Drive. Drives the top N-channel  
MOSFET with a voltage swing equal to INTVCC minus a  
diode drop, superimposed on the switch node voltage.  
ITH (Pin 5): Error Amplifier Compensation Point. The  
current comparator threshold increases with this control  
voltage. Nominal voltage range for this pin is 0V to 2.4V.  
SW (Pin 14): Switch Node. The (–) terminal of the boot-  
strap capacitor connects here. This pin swings from a  
diode drop below ground up to VIN.  
SGND (Pin 6): Signal Ground. Connect to the (–) terminal  
of COUT  
.
VOSENSE (Pin 7): Output Voltage Sense. Feedback input  
from the remotely sensed output voltage or from an  
external resistive divider across the output.  
TK (Pin 15): Top MOSFET Kelvin Sense. MOSFET VDS  
sensingrequiresthispintoberoutedtothedrainofthetop  
MOSFET separately from VIN.  
VPROG (Pin 8): Output Voltage Programming. When  
VOSENSE is connected to the output, VPROG < 0.8V selects  
a 3.3V output and VPROG > 3.5V selects a 5V output.  
VIN (Pin 16): Main Supply Input. Decouple this pin to  
ground with an RC filter (4.7, 0.1µF) for applications  
above 3A.  
6
LTC1625  
U
U W  
FUNCTIONAL DIAGRA  
TK  
15  
V
IN  
SYNC  
2
+
TA  
×11  
+
C
IN  
BA  
×11  
0.95V  
+
I
TH  
5
+
0.6V  
OSC  
+
REV  
R
C
I
2
+
S
Q
R
C
C1  
TOP  
I
1
I
THB  
BOOST  
12  
+
0.5V  
+
SLEEP  
0.6V  
C
B
B
TG  
13  
CL  
SWITCH  
LOGIC/  
DROPOUT  
COUNTER  
M1  
SW  
14  
g
= 1m  
V
m
+
FB  
INTV  
CC  
SHUTDOWN  
D
B
EA  
11  
1.19V  
+
OVERVOLTAGE  
FCNT  
+
0.6V  
C
VCC  
BG  
10  
+
M2  
3µA  
PGND  
9
RUN/SS  
3
6V  
C
SS  
1.19V  
REF  
V
1.28V  
IN  
16  
OV  
+
5.2V  
LDO REG  
SGND  
6
1.19V  
4.7V  
+
+
F
1µA  
L1  
V
PROG  
V
FCB  
EXTV  
CC  
8
7
4
1
OSENSE  
+
C
OUT  
1625 BD  
7
LTC1625  
U
OPERATIO  
Main Control Loop  
will attempt to turn on the top MOSFET continuously  
(‘’dropout’’). A dropout counter detects this condition and  
forces the top MOSFET to turn off for about 500ns every  
tenth cycle to recharge the bootstrap capacitor.  
The LTC1625 is a constant frequency, current mode  
controller for DC/DC step-down converters. In normal  
operation, the top MOSFET is turned on when the RS latch  
is set by the on-chip oscillator and is turned off when the  
current comparator I1 resets the latch. While the top  
MOSFET is turned off, the bottom MOSFET is turned on  
until either the inductor current reverses, as determined  
by the current reversal comparator I2, or the next cycle  
begins. Inductor current is measured by sensing the VDS  
potential across the conducting MOSFET. The output of  
the appropriate sense amplifier (TA or BA) is selected by  
the switch logic and applied to the current comparator.  
The voltage on the ITH pin sets the comparator threshold  
corresponding to peak inductor current. The error ampli-  
fier EA adjusts this voltage by comparing the feedback  
signal VFB from the output voltage with the internal 1.19V  
reference. The VPROG pin selects whether the feedback  
voltage is taken directly from the VOSENSE pin or is derived  
from an on-chip resistive divider. When the load current  
increases, it causes a drop in the feedback voltage relative  
to the reference. The ITH voltage then rises until the  
average inductor current again matches the load current.  
An overvoltage comparator OV guards against transient  
overshoots and other conditions that may overvoltage the  
output. In this case, the top MOSFET is turned off and the  
bottom MOSFET is turned on until the overvoltage condi-  
tion is cleared.  
Foldback current limiting for an output shorted to ground  
is provided by a transconductance amplifer CL. As VFB  
drops below 0.6V, the buffered ITH input to the current  
comparator is gradually pulled down to a 0.95V clamp.  
This reduces peak inductor current to about one fifth of its  
maximum value.  
Low Current Operation  
The LTC1625 is capable of Burst Mode operation at low  
load currents. If the error amplifier drives the ITH voltage  
below 0.95V, the buffered ITH input to the current com-  
paratorwillremainclampedat0.95V.Theinductorcurrent  
peak is then held at approximately 30mV/RDS(ON)(TOP). If  
ITH then drops below 0.5V, the Burst Mode comparator B  
will turn off both MOSFETs. The load current will be  
supplied solely by the output capacitor until ITH rises  
above the 50mV hysteresis of the comparator and switch-  
ing is resumed. Burst Mode operation is disabled by  
comparator F when the FCB pin is brought below 1.19V.  
This forces continuous operation and can assist second-  
ary winding regulation.  
The internal oscillator can be synchronized to an external  
clock applied to the SYNC pin and can lock to a frequency  
between 100% and 150% of its nominal 150kHz rate.  
When the SYNC pin is left open, it is pulled low internally  
and the oscillator runs at its normal rate. If this pin is taken  
above 1.2V, the oscillator will run at its maximum 225kHz  
rate.  
Pulling the RUN/SS pin low forces the controller into its  
shutdown state and turns off both MOSFETs. Releasing  
the RUN/SS pin allows an internal 3µA current source to  
charge up an external soft start capacitor CSS. When this  
voltage reaches 1.4V, the controller begins switching, but  
with the ITH voltage clamped at approximately 0.8V. As  
CSS continuestocharge,theclampisraiseduntilfullrange  
operation is restored.  
INTVCC/EXTVCC Power  
Power for the top and bottom MOSFET drivers and most  
of the internal circuitry of the LTC1625 is derived from the  
INTVCC pin. When the EXTVCC pin is left open, an internal  
5.2V low dropout regulator supplies the INTVCC power  
from VIN. If EXTVCC is raised above 4.7V, the internal  
regulator is turned off and an internal switch connects  
EXTVCC to INTVCC. This allows a high efficiency source,  
suchastheprimaryorasecondaryoutputoftheconverter  
itself, to provide the INTVCC power.  
The top MOSFET driver is powered from a floating boot-  
strap capacitor CB. This capacitor is normally recharged  
from INTVCC through a diode DB when the top MOSFET is  
turned off. As VIN decreases towards VOUT, the converter  
8
LTC1625  
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ThebasicLTC1625applicationcircuitisshowninFigure1.  
External component selection is primarily determined by  
themaximumloadcurrentandbeginswiththeselectionof  
the sense resistance and power MOSFETs. Because the  
LTC1625usesMOSFETVDS sensing, thesenseresistance  
is the RDS(ON) of the MOSFETs. The operating frequency  
and the inductor are chosen based largely on the desired  
amount of ripple current. Finally, CIN is selected for its  
ability to handle the large RMS current into the converter  
and COUT is chosen with low enough ESR to meet the  
output voltage ripple specification.  
The ρT is a normalized term accounting for the significant  
variation in RDS(ON) with temperature, typically about  
0.4%/°C as shown in Figure 2. Junction to case tempera-  
ture TJC is around 10°C in most applications. For a  
maximumambienttemperatureof70°C, usingρ80°C 1.3  
intheaboveequationisareasonablechoice.Thisequation  
is plotted in Figure 3 to illustrate the dependence of  
maximum output current on RDS(ON). Some popular  
MOSFETs from Siliconix are shown as data points.  
2.0  
1.5  
1.0  
0.5  
0
Power MOSFET Selection  
The LTC1625 requires two external N-channel power  
MOSFETs, one for the top (main) switch and one for the  
bottom (synchronous) switch. Important parameters for  
the power MOSFETs are the breakdown voltage V(BR)DSS  
threshold voltage VGS(TH), on-resistance RDS(ON), reverse  
transfer capacitance CRSS and maximum current ID(MAX)  
,
.
The gate drive voltage is set by the 5.2V INTVCC supply.  
Consequently, logic level threshold MOSFETs must be  
used in LTC1625 applications. If low input voltage opera-  
tion is expected (VIN < 5V), then sub-logic level threshold  
MOSFETs should be used. Pay close attention to the  
V(BR)DSS specification for the MOSFETs as well; many of  
the logic level MOSFETs are limited to 30V or less.  
50  
100  
50  
150  
0
JUNCTION TEMPERATURE (°C)  
1625 F02  
Figure 2. RDS(ON) vs Temperature  
10  
8
The MOSFET on-resistance is chosen based on the  
required load current. The maximum average output cur-  
rent IO(MAX) is equal to the peak inductor current less half  
the peak-to-peak ripple current IL. The peak inductor  
current is inherently limited in a current mode controller  
by the current threshold ITH range. The corresponding  
maximum VDS sense voltage is about 150mV under nor-  
mal conditions. The LTC1625 will not allow peak inductor  
current to exceed 150mV/RDS(ON)(TOP). The following  
equation is a good guide for determining the required  
RDS(ON)(MAX) at 25°C (manufacturer’s specification), al-  
lowing some margin for ripple current, current limit and  
variationsintheLTC1625andexternalcomponentvalues:  
Si4420  
Si4410  
6
4
Si4412  
2
Si9936  
0
0
0.02  
0.04  
0.06  
0.08  
0.10  
R
()  
DS(ON)  
1625 F03  
Figure 3. Maximum Output Current vs RDS(ON) at VGS = 4.5V  
The power dissipated by the top and bottom MOSFETs  
strongly depends upon their respective duty cycles and  
the load current. When the LTC1625 is operating in con-  
tinuous mode, the duty cycles for the MOSFETs are:  
120mV  
R
DS(ON)(MAX)  
I
(
ρ
)(  
T
)
O(MAX)  
9
LTC1625  
APPLICATIONS INFORMATION  
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7V  
V
V
OUT  
TopDutyCycle =  
IN  
V – V  
IN  
OUT  
BottomDutyCycle =  
1.2V  
V
IN  
1µs  
4µs  
The MOSFET power dissipations at maximum output  
current are:  
±
1625 F04  
0
Figure 4. SYNC Clock Waveform  
2
V
V
OUT  
P
=
(I  
)(ρ )(R  
T(TOP) DS(ON)  
)
TOP  
O(MAX)  
IN  
Inductor Value Selection  
2
+ (k)(V )(I  
)(C )(f)  
IN O(MAX) RSS  
Given the desired input and output voltages, the inductor  
value and operating frequency directly determine the  
ripple current:  
2
V – V  
IN  
OUT  
P
=
(I  
)(ρ  
)(R  
)
BOT  
O(MAX)  
T(BOT)  
DS(ON)  
V
IN  
V
V
OUT  
V
IN  
OUT  
(f)(L)  
I =  
1–  
L
Both MOSFETs have I2R losses and the PTOP equation  
includesanadditionaltermfortransitionlosses, whichare  
largest at high input voltages. The constant k = 1.7 can be  
usedtoestimatetheamountoftransitionloss. Thebottom  
MOSFETlossesaregreatestathighinputvoltageorduring  
a short circuit when the duty cycle is nearly 100%.  
Lower ripple current reduces core losses in the inductor,  
ESR losses in the output capacitors and output voltage  
ripple. Thus, highest efficiency operation is obtained at  
low frequency with small ripple current. To achieve this,  
however, requires a large inductor.  
A reasonable starting point is to choose a ripple current  
that is about 40% of IO(MAX). Note that the largest ripple  
current occurs at the highest VIN. To guarantee that ripple  
current does not exceed a specified maximum, the induc-  
tor should be chosen according to:  
Operating Frequency and Synchronization  
The choice of operating frequency and inductor value is a  
trade-off between efficiency and component size. Low  
frequency operation improves efficiency by reducing  
MOSFET switching losses, both gate charge loss and  
transition loss. However, lower frequency operation  
requires more inductance for a given amount of ripple  
current.  
V
V
OUT  
OUT  
L ≥  
1–  
(f)(I  
)
V
IN(MAX)  
L(MAX)  
Theinternaloscillatorrunsatanominal150kHzfrequency  
when the SYNC pin is left open or connected to ground.  
Pulling the SYNC pin above 1.2V will increase the fre-  
quency by 50%. The oscillator will injection lock to a clock  
signal applied to the SYNC pin with a frequency between  
165kHz and 200kHz. The clock high level must exceed  
1.2V for at least 1µs and no longer than 4µs as shown in  
Figure 4. The top MOSFET turn-on will synchronize with  
the rising edge of the clock.  
Burst Mode Operation Considerations  
The choice of RDS(ON) and inductor value also determines  
the load current at which the LTC1625 enters Burst Mode  
operation. When bursting, the controller clamps the peak  
inductor current to approximately:  
30mV  
I
=
BURST(PEAK)  
R
DS(ON)  
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Thecorrespondingaveragecurrentdependsontheamount  
of ripple current. Lower inductor values (higher IL) will  
reduce the load current at which Burst Mode operation  
begins.  
maximum values for RDS(ON), but not a minimum. A  
reasonable, but perhaps overly conservative, assumption  
is that the minimum RDS(ON) lies the same amount below  
the typical value as the maximum RDS(ON) lies above it.  
Consult the MOSFET manufacturer for further guidelines.  
The output voltage ripple can increase during Burst Mode  
operation if IL is substantially less than IBURST. This will  
primarily occur when the duty cycle is very close to unity  
(VIN is close to VOUT) or if very large value inductors are  
chosen. This is generally only a concern in applications  
with VOUT 5V. At high duty cycles, a skipped cycle  
causes the inductor current to quickly descend to zero.  
However, it takes multiple cycles to ramp the current back  
up to IBURST(PEAK). During this interval, the output capaci-  
tor must supply the load current and enough charge may  
be lost to cause significant droop in the output voltage. It  
The LTC1625 includes current foldback to help further  
limit load current when the output is shorted to ground. If  
the output falls by more than half, then the maximum  
sense voltage is progressively lowered from 150mV to  
30mV. Under short-circuit conditions with very low duty  
cycle, the LTC1625 will begin skipping cycles in order to  
limit the short-circuit current. In this situation the bottom  
MOSFET RDS(ON) will control the inductor current trough  
rather than the top MOSFET controlling the inductor  
current peak. The short-circuit ripple current is deter-  
mined by the minimum on-time tON(MIN) of the LTC1625  
(approximately 0.5µs), the input voltage, and inductor  
value:  
is a good idea to keep IL comparable to IBURST(PEAK)  
.
Otherwise, one might need to increase the output capaci-  
tance in order to reduce the voltage ripple or else disable  
Burst Mode operation by forcing continuous operation  
with the FCB pin.  
IL(SC) = tON(MIN) VIN/L.  
The resulting short-circuit current is:  
Fault Conditions: Current Limit and Output Shorts  
30mV  
1
2
I
=
+ ∆I  
SC  
L(SC)  
The LTC1625 current comparator can accommodate a  
maximum sense voltage of 150mV. This voltage and the  
sense resistance determine the maximum allowed peak  
inductor current. The corresponding output current limit  
is:  
R
(
ρ
T
)(  
)
DS(ON)(BOT)  
Normally,thetopandbottomMOSFETswillbeofthesame  
type. A bottom MOSFET with lower RDS(ON) than the top  
may be chosen if the resulting increase in short-circuit  
current is tolerable. However, the bottom MOSFET should  
neverbechosentohaveahighernominalRDS(ON) thanthe  
top MOSFET.  
150mV  
1
2
ILIMIT  
=
IL  
R
ρ
(
DS(ON))( )  
T
The current limit value should be checked to ensure that  
ILIMIT(MIN) > IO(MAX). The minimum value of current limit  
generally occurs with the largest VIN at the highest ambi-  
enttemperature,conditionswhichcausethehighestpower  
dissipation in the top MOSFET. Note that it is important to  
check for self-consistency between the assumed junction  
temperature of the top MOSFET and the resulting value of  
Inductor Core Selection  
Once the value for L is known, the type of inductor must be  
selected. High efficiency converters generally cannot  
affordthecorelossfoundinlowcostpowderedironcores,  
forcing the use of more expensive ferrite, molypermalloy  
or Kool Mµ® cores. Actual core loss is independent of core  
size for a fixed inductor value, but it is very dependent on  
the inductance selected. As inductance increases, core  
losses go down. Unfortunately, increased inductance  
requires more turns of wire and therefore copper losses  
will increase.  
ILIMIT which heats the junction.  
Caution should be used when setting the current limit  
based upon RDS(ON) of the MOSFETs. The maximum  
current limit is determined by the minimum MOSFET on-  
resistance. Data sheets typically specify nominal and  
Kool Mµ is a registered trademark of Magnetics, Inc.  
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Ferrite designs have very low core loss and are preferred  
at high switching frequencies, so design goals can con-  
centrate on copper loss and preventing saturation. Ferrite  
core material saturates “hard,” which means that induc-  
tance collapses rapidly when the peak design current is  
exceeded. This results in an abrupt increase in inductor  
ripple current and consequent output voltage ripple. Do  
not allow the core to saturate!  
2000hoursoflife.Thismakesitadvisabletofurtherderate  
the capacitor or to choose a capacitor rated at a higher  
temperaturethanrequired.Severalcapacitorsmayalsobe  
placedinparalleltomeetsizeorheightrequirementsinthe  
design.  
The selection of COUT is primarily determined by the ESR  
required to minimize voltage ripple. The output ripple  
VOUT is approximately bounded by:  
Molypermalloy (from Magnetics, Inc.) is a very good, low  
losscorematerialfortoroids,butitismoreexpensivethan  
ferrite. A reasonable compromise from the same manu-  
facturer is Kool Mµ. Toroids are very space efficient,  
especially when you can use several layers of wire.  
Because they generally lack a bobbin, mounting is more  
difficult. However, designsforsurfacemountareavailable  
which do not increase the height significantly.  
1
V  
≤ ∆I ESR +  
L
OUT  
(8)(f)(C  
)
OUT  
Since IL increases with input voltage, the output ripple is  
highestatmaximuminputvoltage.Typically,oncetheESR  
requirement is satisfied the capacitance is adequate for  
filtering and has the required RMS current rating.  
Manufacturers such as Nichicon, United Chemicon and  
Sanyoshouldbeconsideredforhighperformancethrough-  
hole capacitors. The OS-CON semiconductor dielectric  
capacitor available from Sanyo has the lowest product of  
ESR and size of any aluminum electrolytic at a somewhat  
higher price.  
Schottky Diode Selection  
The Schottky diode D1 shown in Figure 1 conducts during  
the dead time between the conduction of the power  
MOSFETs. This prevents the body diode of the bottom  
MOSFET from turning on and storing charge during the  
dead time, which could cost as much as 1% in efficiency.  
A 1A Schottky diode is generally a good size for 3A to 5A  
regulators. The diode may be omitted if the efficiency loss  
can be tolerated.  
In surface mount applications, multiple capacitors may  
have to be placed in parallel to meet the ESR requirement.  
Aluminum electrolytic and dry tantalum capacitors are  
both available in surface mount packages. In the case of  
tantalum, it is critical that the capacitors have been surge  
tested for use in switching power supplies. An excellent  
choice is the AVX TPS series of surface mount tantalum,  
availableincaseheightsrangingfrom2mmto4mm.Other  
capacitor types include Sanyo OS-CON, Nichicon PL se-  
ries, and Sprague 593D and 595D series. Consult the  
manufacturer for other specific recommendations.  
CIN and COUT Selection  
In continuous mode, the drain current of the top MOSFET  
is approximately a square wave of duty cycle VOUT/VIN. To  
prevent large input voltage transients, a low ESR input  
capacitor sized for the maximum RMS current must be  
used. The maximum RMS current is given by:  
1/2  
INTVCC Regulator  
V
V
V
IN  
V
OUT  
OUT  
I
I
1  
RMS O(MAX)  
An internal P-channel low dropout regulator produces the  
5.2V supply which powers the drivers and internal cir-  
cuitry within the LTC1625. The INTVCC pin can supply up  
to50mAandmustbebypassedtogroundwithaminimum  
of 4.7µF tantalum or low ESR electrolytic capacitance.  
Good bypassing is necessary to supply the high transient  
currents required by the MOSFET gate drivers.  
IN  
This formula has a maximum at VIN = 2VOUT, where IRMS  
= IO(MAX)/2. This simple worst-case condition is com-  
monlyusedfordesignbecauseevensignificantdeviations  
do not offer much relief. Note that ripple current ratings  
from capacitor manufacturers are often based on only  
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High input voltage applications in which large MOSFETs  
arebeingdrivenathighfrequenciesmaycausetheLTC1625  
to exceed its maximum junction temperature rating. Most  
of the supply current drives the MOSFET gates unless an  
external EXTVCC source is used. The junction temperature  
can be estimated from the equations given in Note 2 of the  
Electrical Characteristics. For example, the LTC1625CGN  
is limited to less than 14mA from a 30V supply:  
3. EXTVCC connectedtoanoutput-derivedboostnetwork.  
For 3.3V and other low voltage regulators, efficiency  
gains can still be realized by connecting EXTVCC to an  
output-derived voltage which has been boosted to  
greater than 4.7V. This can be done with either an  
inductive boost winding as shown in Figure 5a or a  
capacitive charge pump as shown in Figure 5b.  
4. EXTVCC connected to an external supply. If an external  
supply isavailable in the 5V to 7Vrange (EXTVCC <VIN),  
it may be used to power EXTVCC providing it is compat-  
ible with the MOSFET gate drive requirements.  
TJ = 70°C + (14mA)(30V)(130°C/W) = 125°C  
Topreventthemaximumjunctiontemperaturefrombeing  
exceeded, the input supply current must be checked when  
operating in continuous mode at high VIN.  
V
C
IN  
+
EXTVCC Connection  
V
SEC  
IN  
V
IN  
The LTC1625 contains an internal P-channel MOSFET  
switch connected between the EXTVCC and INTVCC pins.  
Whenever the EXTVCC pin is above 4.7V the internal 5.2V  
regulator shuts off, the switch closes and INTVCC power is  
supplied via EXTVCC until EXTVCC drops below 4.5V. This  
allows the MOSFET gate drive and control power to be  
derived from the output or other external source during  
normal operation. When the output is out of regulation  
(start-up,shortcircuit)powerissuppliedfromtheinternal  
regulator. Do not apply greater than 7V to the EXTVCC pin  
and ensure that EXTVCC VIN.  
TK  
1N4148  
TG  
OPTIONAL  
+
LTC1625  
EXTV  
C
SEC  
EXTV  
CC  
SW  
1µF  
CC  
CONNECTION  
V
OUT  
R4  
R3  
5V < V  
< 7V  
SEC  
T1  
1:N  
+
C
FCB  
OUT  
BG  
SGND  
PGND  
1625 F05a  
Figure 5a: Secondary Output Loop and EXTVCC Connection  
V
2(V  
– V )  
OUT D  
PUMP  
Significant efficiency gains can be realized by powering  
INTVCC from the output, since the VIN current supplying  
the driver and control currents will be scaled by a factor of  
DutyCycle/Efficiency.For5Vregulatorsthissimplymeans  
connecting the EXTVCC pin directly to VOUT. However, for  
3.3V and other lower voltage regulators, additional cir-  
cuitry is required to derive INTVCC power from the output.  
+
1µF  
V
C
IN  
+
BAT85  
IN  
V
IN  
BAT85  
L1  
0.22µF  
TK  
TG  
BAT85  
LTC1625  
VN2222LL  
SW  
EXTV  
CC  
V
OUT  
+
The following list summarizes the four possible connec-  
tions for EXTVCC:  
C
OUT  
BG  
PGND  
1. EXTVCC left open (or grounded). This will cause INTVCC  
tobepoweredfromtheinternal5.2Vregulatorresulting  
in an efficiency penalty of up to 10% at high input  
voltages.  
1625 F05b  
Figure 5b: Capacitive Charge Pump for EXTVCC  
2. EXTVCC connected directly to VOUT. This is the normal  
connection for a 5V regulator and provides the highest  
efficiency.  
13  
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VPROG pin is left open and the VOSENSE pin is connected to  
feedback resistors as shown in Figure 6b. The output  
voltage is set by the divider as:  
Note that RDS(ON) also varies with the gate drive level. If  
gate drives other than the 5.2V INTVCC are used, this must  
be accounted for when selecting the MOSFET RDS(ON)  
.
Particular care should be taken with applications where  
EXTVCC is connected to the output. When the output  
voltage is between 4.7V and 5.2V, INTVCC will be con-  
nected to the output and the gate drive is reduced. The  
resulting increase in RDS(ON) will also lower the current  
limit. Even applications with VOUT > 5.2V will traverse this  
region during start-up and must take into account the  
reduced current limit.  
R2  
R1  
V
= 1.19V 1+  
OUT  
LTC1625  
V
OUT  
= 5V: INTV  
OUT  
CC  
V
V
PROG  
V
= 3.3V:  
GND  
V
OUT  
OSENSE  
+
Topside MOSFET Driver Supply (CB, DB)  
C
OUT  
SGND  
An external bootstrap capacitor (CB in the functional  
diagram) connected to the BOOST pin supplies the gate  
drive voltage for the topside MOSFET. This capacitor is  
chargedthroughdiodeDB fromINTVCC whentheSWnode  
is low. Note that the voltage across CB is about a diode  
drop below INTVCC. When the top MOSFET turns on, the  
switch node voltage rises to VIN and the BOOST pin rises  
to approximately VIN + INTVCC. During dropout operation,  
CB suppliesthetopdriverforaslongastencyclesbetween  
refreshes. Thus, the boost capacitance needs to store  
about 100 times the gate charge required by the top  
MOSFET. In many applications 0.22µF is adequate.  
1625 F06a  
Figure 6a. Fixed 3.3V or 5V VOUT  
LTC1625  
OPEN  
V
V
PROG  
R2  
R1  
+
C
OUT  
OSENSE  
SGND  
1625 F06b  
When adjusting the gate drive level , the final arbiter is the  
total input current for the regulator. If you make a change  
and the input current decreases, then you improved the  
efficiency. If there is no change in input current, then there  
is no change in efficiency.  
Figure 6b. Adjustable VOUT  
Run/Soft Start Function  
The RUN/SS pin is a dual purpose pin that provides a soft  
startfunctionandameanstoshutdowntheLTC1625.Soft  
start reduces surge currents from VIN by gradually in-  
creasing the controller’s current limit ITH(MAX). This pin  
can also be used for power supply sequencing.  
Output Voltage Programming  
The LTC1625 has a pin selectable output voltage deter-  
mined by the VPROG pin as follows:  
VPROG = 0V  
VPROG = INTVCC  
VPROG = Open  
VOUT = 3.3V  
Pulling the RUN/SS pin below 1.4V puts the LTC1625 into  
alowquiescentcurrentshutdown(IQ<30µA).Thispincan  
be driven directly from logic as shown in Figure 7. Releas-  
ing the RUN/SS pin allows an internal 3µA current source  
to charge up the external capacitor CSS. If RUN/SS has  
been pulled all the way to ground there is a delay before  
starting of approximately:  
VOUT = 5V  
VOUT = Adjustable  
Remote sensing of the output voltage is provided by the  
VOSENSE pin. For fixed 3.3V and 5V output applications an  
internal resistive divider is used and the VOSENSE pin is  
connected directly to the output voltage as shown in  
Figure 6a. When using an external resistive divider, the  
14  
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then VSEC will droop. An external resistor divider from  
1.4V  
3µA  
VSEC to the FCB pin sets a minimum voltage VSEC(MIN)  
:
t
=
C
= 0.5s/µF C  
(
)
DELAY  
SS  
SS  
R4  
R3  
V
1.19V 1+  
When the voltage on RUN/SS reaches 1.4V the LTC1625  
begins operating with a clamp on ITH at 0.8V. As the  
voltage on RUN/SS increases to approximately 3.1V, the  
clamp on ITH is raised until its full 2.4V range is restored.  
This takes an additional 0.5s/µF. During this time the load  
currentwillbefoldedbacktoapproximately30mV/RDS(ON)  
until the output reaches half of its final value.  
SEC(MIN)  
If VSEC drops below this level, the FCB voltage forces  
continuous operation until VSEC is again above its  
minimum.  
Minimum On-Time Considerations  
Diode D1 in Figure 7 reduces the start delay while allowing  
Minimum on-time tON(MIN) is the smallest amount of time  
that the LTC1625 is capable of turning the top MOSFET on  
and off again. It is determined by internal timing delays and  
the amount of gate charge required to turn on the top  
MOSFET. Low duty cycle applications may approach this  
minimum on-time limit and care should be taken to ensure  
that:  
C
SS to charge up slowly for the soft start function. This  
diodeandCSS canbedeletedifsoftstartisnotneeded.The  
RUN/SS pin has an internal 6V zener clamp (See Func-  
tional Diagram).  
3.3V  
OR 5V  
RUN/SS  
RUN/SS  
D1  
V
C
SS  
OUT  
C
SS  
t
<
ON(MIN)  
(V )(f)  
1625 F07  
IN  
Ifthedutycyclefallsbelowwhatcanbeaccommodatedby  
the minimum on-time, the LTC1625 will begin to skip  
cycles. The output voltage will continue to be regulated,  
but the ripple current and ripple voltage will increase.  
Figure 7. RUN/SS Pin Interfacing  
FCB Pin Operation  
When the FCB pin drops below its 1.19V threshold,  
continuous synchronous operation is forced. In this case,  
the top and bottom MOSFETs continue to be driven  
regardless of the load on the main output. Burst Mode  
operation is disabled and current reversal is allowed in the  
inductor.  
Theminimumon-timefortheLTC1625isgenerallyabout  
0.5µs. However, as the peak sense voltage (IL(PEAK) •  
RDS(ON)) decreases, the minimum on-time gradually  
increases up to about 0.7µs. This is of particular concern  
in forced continuous applications with low ripple current  
at light loads. If the duty cycle drops below the minimum  
on-time limit in this situation, a significant amount of  
cycle skipping can occur with correspondingly larger  
current and voltage ripple.  
In addition to providing a logic input to force continuous  
operation, the FCB pin provides a means to regulate a  
flyback winding output. It can force continuous synchro-  
nous operation when needed by the flyback winding,  
regardless of the primary output load.  
Efficiency Considerations  
The efficiency of a switching regulator is equal to the  
output power divided by the input power (×100%). Per-  
cent efficiency can be expressed as:  
The secondary output voltage VSEC is normally set as  
shown in Figure 5a by the turns ratio N of the transformer:  
VSEC (N + 1)VOUT  
%Efficiency = 100% – (L1 + L2 + L3 + ...)  
However, if the controller goes into Burst Mode operation  
and halts switching due to a light primary load current,  
15  
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whereL1, L2, etc. aretheindividuallossesasapercentage  
of input power. It is often useful to analyze individual  
losses to determine what is limiting the efficiency and  
which change would produce the most improvement.  
Although all dissipative elements in the circuit produce  
losses, four main sources usually account for most of the  
losses in LTC1625 circuits:  
4. LTC1625 VIN supply current. The VIN current is the DC  
supplycurrenttothecontrollerexcludingMOSFETgate  
drive current. Total supply current is typically about  
850µA. If EXTVCC is connected to 5V, the LTC1625 will  
drawonly330µAfromVIN andtheremaining520µAwill  
come from EXTVCC. VIN current results in a small  
(<1%) loss which increases with VIN.  
1. INTVCC current. This is the sum of the MOSFET driver  
and control currents. The driver current results from  
switching the gate capacitance of the power MOSFETs.  
Each time a MOSFET gate is switched on and then off,  
a packet of gate charge Qg moves from INTVCC to  
ground. The resulting current out of INTVCC is typically  
much larger than the control circuit current. In continu-  
ous mode, IGATECHG = f(Qg(TOP) + Qg(BOT)).  
Other losses including CIN and COUT ESR dissipative  
losses, Schottky conduction losses during dead time  
and inductor core losses, generally account for less  
than 2% total additional loss.  
Checking Transient Response  
The regulator loop response can be checked by looking at  
the load transient response. Switching regulators take  
several cycles to respond to a step in DC (resistive) load  
current. Whenaloadstepoccurs, VOUT immediatelyshifts  
by an amount equal to (ILOAD)(ESR), where ESR is the  
effective series resistance of COUT, and COUT begins to  
charge or discharge. The regulator loop acts on the  
resultingfeedbackerrorsignaltoreturnVOUT toitssteady-  
state value. During this recovery time VOUT can be moni-  
tored for overshoot or ringing which would indicate a  
stability problem. The ITH pin external components shown  
in Figure 1 will provide adequate compensation for most  
applications.  
By powering EXTVCC from an output-derived source,  
the additional VIN current resulting from the driver and  
control currents will be scaled by a factor of Duty Cycle/  
Efficiency. For example, in a 20V to 5V application at  
400mA load, 10mA of INTVCC current results in ap-  
proximately 3mA of VIN current. This reduces the loss  
from 10% (if the driver was powered directly from VIN)  
to about 3%.  
2. DC I2R Losses. Since there is no separate sense resis-  
tor, DC I2R losses arise only from the resistances of the  
MOSFETs and inductor. In continuous mode the aver-  
age output current flows through L, but is “chopped”  
between the top MOSFET and the bottom MOSFET. If  
A second, more severe transient is caused by connecting  
loads with large (>1µF) supply bypass capacitors. The  
dischargedbypasscapacitorsareeffectivelyputinparallel  
with COUT, causing a rapid drop in VOUT. No regulator can  
deliver enough current to prevent this problem if the load  
switch resistance is low and it is driven quickly. The only  
solution is to limit the rise time of the switch drive in order  
to limit the inrush current to the load.  
thetwoMOSFETshaveapproximatelythesameRDS(ON)  
,
then the resistance of one MOSFET can simply be  
summed with the resistance of L to obtain the DC I2R  
loss. For example, if each RDS(ON) = 0.05and RL =  
0.15, then the total resistance is 0.2. This results in  
losses ranging from 2% to 8% as the output current  
increases from 0.5A to 2A for a 5V output. I2R losses  
cause the efficiency to drop at high output currents.  
Automotive Considerations: Plugging into the  
Cigarette Lighter  
3. Transition losses apply only to the topside MOSFET,  
and only when operating at high input voltages (typi-  
cally 20V or greater). Transition losses can be esti-  
mated from:  
As battery-powered devices go mobile, there is a natural  
interest in plugging into the cigarette lighter in order to  
conserve or even recharge battery packs during opera-  
tion. But before you connect, be advised: you are plug-  
ging into the supply from hell. The main battery line in an  
Transition Loss = (1.7)(VIN2)(IO(MAX))(CRSS)(f)  
16  
LTC1625  
U
W U U  
APPLICATIONS INFORMATION  
automobile is the source of a number of nasty potential  
transients, including load dump, reverse and double  
battery.  
For 40% ripple current at maximum VIN the inductor  
should be:  
3.3V  
(225kHz)(0.4)(2A)  
3.3V  
22V  
Load dump is the result of a loose battery cable. When the  
cablebreaksconnection,thefieldcollapseinthealternator  
can cause a positive spike as high as 60V which takes  
several hundred milliseconds to decay. Reverse battery is  
just what it says, while double battery is a consequence of  
tow truck operators finding that a 24V jump start cranks  
cold engines faster than 12V.  
L ≥  
1–  
= 16µH  
Choosing a standard value of 15µH results in a maximum  
ripple current of:  
3.3V  
(225kHz)(15µH)  
3.3V  
22V  
I  
=
1–  
= 0.83A  
L(MAX)  
ThenetworkshowninFigure8isthemoststraightforward  
approach to protect a DC/DC converter from the ravages  
of an automotive battery line. The series diode prevents  
current from flowing during reverse battery, while the  
transient suppressor clamps the input voltage during load  
dump. Note that the transient suppressor should not  
conduct during double-battery operation, but must still  
clamptheinputvoltagebelowbreakdownoftheconverter.  
Although the LTC1625 has a maximum input voltage of  
36V, most applications will be limited to 30V by the  
Next, check that the minimum value of the current limit is  
acceptable. Assume a junction temperature close to a  
70°C ambient with ρ80°C = 1.3.  
150mV  
(0.042)(1.3)  
1
2
I
0.83A = 2.3A  
LIMIT  
ThisiscomfortablyaboveIO(MAX)=2A.Nowdouble-check  
the assumed TJ:  
MOSFET V(BR)DSS  
.
3.3V  
22V  
2
50A I  
12V  
PK  
P
=
(2.3A) (1.3)(0.042)+  
TOP  
RATING  
V
IN  
2
(1.7)(22) (2.3A)(180pF)(225kHz)  
TRANSIENT VOLTAGE  
SUPPRESSOR  
GENERAL INSTRUMENT  
1.5KA24A  
LTC1625  
= 43mW + 77mW = 120mW  
PGND  
TJ = 70°C + (120mW)(50°C/W) = 76°C  
1625 F08  
Since ρ(76°C) ρ(80°C), the solution is self-consistent.  
Figure 8. Automotive Application Protection  
A short circuit to ground will result in a folded back  
current of:  
Design Example  
As a design example, take a supply with the following  
specifications: VIN = 12V to 22V (15V nominal), VOUT  
30mV  
(0.03)(1.1)  
1 (15V)(0.5µs)  
I
=
+
= 1.2A  
SC  
2
15µH  
=
3.3V, IO(MAX) = 2A, and f = 225kHz. The required RDS(ON)  
can immediately be estimated:  
with a typical value of RDS(ON) and ρ(50°C) = 1.1. The  
resulting power dissipated in the bottom MOSFET is:  
120mV  
(2A)(1.3)  
15V – 3.3V  
15V  
2
R
=
= 0.046Ω  
P
=
(1.2A) (1.1)(0.03) = 37mW  
DS(ON)  
BOT  
A 0.042Siliconix Si4412DY MOSFET (θJA = 50°C/W) is  
close to this value.  
which is less than under full load conditions.  
17  
LTC1625  
APPLICATIONS INFORMATION  
U
W U U  
V
IN  
12V TO 22V  
C
IN  
+
1
16  
22µF  
35V  
×2  
EXTV  
V
IN  
CC  
C
SS  
2
3
15  
14  
M1  
0.1µF  
INTV  
SYNC  
TK  
CC  
Si4412DY  
L1  
15µH  
RUN/SS  
SW  
C
C1  
V
3.3V  
2A  
LTC1625  
OUT  
4
5
13  
12  
R
470pF  
C
OPEN  
FCB  
TG  
10k  
I
TH  
BOOST  
C
VCC  
C
C2  
D
B
C
B
4.7µF  
220pF  
CMDSH-3  
0.1µF  
C
6
11  
OUT  
100µF  
10V  
0.065Ω  
×2  
SGND  
INTV  
CC  
+
+
7
8
10  
9
M2  
Si4412DY  
V
V
BG  
OSENSE  
PGND  
PROG  
D1  
MBRS140T3  
1625 F09  
C
C
: AVX TPSE226M035R0300  
IN  
: AVX TPSD107M010R0065  
OUT  
L1: SUMIDA CDRH125-150MC  
Figure 9. 3.3V/2A Fixed Output at 225kHz  
CIN is chosen for an RMS current rating of at least 1A at  
temperature. COUT is chosen with an ESR of 0.033for  
low output ripple. The output ripple in continuous mode  
will be highest at the maximum input voltage and is  
approximately:  
3) The LTC1625 signal ground pin must return to the (–)  
plate of COUT. Connect the (–) plate of COUT to power  
ground at the source of the bottom MOSFET  
4) Keep the switch node SW away from sensitive small-  
signal nodes. Ideally the switch node should be placed  
on the opposite side of the power MOSFETs from the  
LTC1625.  
VO = (IL(MAX))(ESR) = (0.83A)(0.033) = 27mV  
The complete circuit is shown in Figure 9.  
5) Connect the INTVCC decoupling capacitor CVCC closely  
to the INTVCC pin and the power ground pin. This  
capacitor carries the MOSFET gate drive current.  
PC Board Layout Checklist  
When laying out the printed circuit board, the following  
checklist should be used to ensure proper operation of the  
LTC1625. These items are also illustrated graphically in  
the layout diagram of Figure 10. Check the following in  
your layout:  
6) Does the VOSENSE pin connect directly to the (+) plate of  
COUT? In adjustable applications, the resistive divider  
(R1, R2) must be connected between the (+) plate of  
COUT and signal ground. Place the divider near the  
LTC1625 in order to keep the high impedance VOSENSE  
node short.  
1) Connect the TK lead directly to the drain of the topside  
MOSFET. Then connect the drain to the (+) plate of CIN.  
This capacitor provides the AC current to the top  
MOSFET.  
7) For applications with multiple switching power con-  
vertersconnectedtothesameVIN, ensurethattheinput  
filtercapacitancefortheLTC1625isnotsharedwiththe  
other converters. AC input current from another con-  
verter will cause substantial input voltage ripple that  
may interfere with proper operation of the LTC1625. A  
few inches of PC trace or wire (100nH) between CIN  
and VIN is sufficient to prevent sharing.  
2) Thepowergroundpinconnectsdirectlytothesourceof  
thebottomN-channelMOSFET.Thenconnectthesource  
to the anode of the Schottky diode and (–) plate of CIN,  
which should have as short lead lengths as possible.  
18  
LTC1625  
U
W U U  
APPLICATIONS INFORMATION  
OPTIONAL 5V EXTV  
CC  
+
CONNECTION  
16  
1
EXTV  
V
IN  
CC  
2
3
15  
14  
EXT  
CLK  
C
SS  
SYNC  
TK  
M1  
RUN/SS  
SW  
L1  
LTC1625  
4
5
13  
12  
OPEN  
C
FCB  
TG  
C
C
B
V
IN  
C1  
R
I
TH  
BOOST  
C
D
B
VCC  
6
11  
SGND  
INTV  
CC  
+
+
R2  
7
8
10  
9
D1  
M2  
C
V
BG  
IN  
OSENSE  
OPEN  
V
PGND  
PROG  
R1  
OUTPUT DIVIDER  
REQUIRED  
V
OUT  
C
OUT  
+
WITH V  
OPEN  
PROG  
+
1625 F10  
BOLD LINES INDICATE HIGH CURRENT PATHS  
Figure 10. LTC1625 Layout Diagram  
U
TYPICAL APPLICATIONS  
5V/1.2A Fixed Output at 225kHz  
V
IN  
5V TO 28V  
+
C
IN  
1
16  
15µF  
EXTV  
V
IN  
CC  
C
SS  
35V  
2
3
15  
14  
M1  
1/2 Si9936DY  
L1  
39µH  
0.1µF  
SYNC  
RUN/SS  
LTC1625  
TK  
INTV  
CC  
SW  
C
C
V
OUT  
4
5
13  
12  
R
330pF  
C
OPEN  
FCB  
TG  
5V  
10k  
1.2A  
I
TH  
BOOST  
C
VCC  
D
B
C
C
4.7µF  
B
OUT  
CMDSH-3  
+
0.1µF  
100µF  
10V  
6
11  
SGND  
INTV  
CC  
+
0.100Ω  
7
8
10  
9
M2  
1/2 Si9936DY  
V
V
BG  
OSENSE  
PGND  
PROG  
1625 TA02  
C
C
: AVX TPSD156M035R0300  
IN  
: AVX TPSD107M010R0100  
OUT  
L1: SUMIDA CD104-390MC  
19  
LTC1625  
U
TYPICAL APPLICATIONS  
2.5V/2.8A Adjustable Output  
R
F
4.7Ω  
V
IN  
5V TO 28V  
C
C
IN  
F
+
1
16  
22µF  
35V  
×2  
EXTV  
V
0.1µF  
CC  
IN  
C
SS  
2
3
15  
14  
M1  
0.1µF  
SYNC  
TK  
1/2 Si4920DY  
RUN/SS  
SW  
L1  
15µH  
C
C1  
V
2.5V  
2.8A  
LTC1625  
OUT  
4
5
13  
12  
R
1nF  
C
OPEN  
OPEN  
FCB  
TG  
10k  
I
TH  
BOOST  
R2  
11k  
1%  
C
VCC  
D
C
B
C2  
C
B
4.7µF  
CMDSH-3  
330pF  
0.22µF  
C
6
11  
OUT  
100µF  
10V  
0.065Ω  
×2  
SGND  
INTV  
CC  
+
+
R1  
10k  
1%  
7
8
10  
9
M2  
V
V
BG  
OSENSE  
1/2 Si4920DY  
PGND  
PROG  
D1  
MBRS140T3  
1625 TA03  
C
C
: AVX TPSE226M020R0300  
IN  
: AVX TPSD107M010R0065  
OUT  
L1: SUMIDA CDRH125-150MC  
3.3V/7A Fixed Output  
R
F
4.7Ω  
V
IN  
5V TO 28V  
C
IN  
C
F
+
1
16  
10µF  
30V  
×3  
0.1µF  
EXTV  
V
IN  
CC  
C
SS  
2
3
15  
14  
M1  
EXT  
CLK  
0.1µF  
SYNC  
TK  
FDS6680A  
L1  
RUN/SS  
SW  
C
7µH  
C1  
V
LTC1625  
OUT  
4
5
13  
12  
R
2.2nF  
C
3.3V  
7A  
FCB  
TG  
OPEN  
10k  
I
BOOST  
TH  
C
VCC  
C
D
C2  
B
C
B
4.7µF  
220pF  
CMDSH-3  
0.22µF  
C
OUT  
150µF  
6.3V  
0.03Ω  
×2  
6
11  
SGND  
INTV  
CC  
+
+
7
8
10  
9
M2  
FDS6680A  
V
V
BG  
OSENSE  
PGND  
PROG  
D1  
MBRS140T3  
1625 TA05  
C
C
: SANYO 30SC10M  
OUT  
IN  
: SANYO 6SA150M  
20  
LTC1625  
U
TYPICAL APPLICATIONS  
3.3V/4A Fixed Output with 12V/120mA Auxiliary Output  
R
F
4.7Ω  
V
IN  
6V TO 20V  
C
C
IN  
F
+
10µF  
30V  
×2  
0.1µF  
M1  
IRLR3103  
V
SEC  
12V  
120mA  
T1  
8µH  
C
S
1
16  
0.1µF  
1:2.53  
EXTV  
V
IN  
CC  
R
S
100k  
C
SS  
D
R4  
95.3k  
1%  
R3  
11k  
1%  
S
2
3
15  
14  
EXT  
CLK  
0.1µF  
SYNC  
TK  
SM4003TR*  
+
C
SEC  
3.3µF  
RUN/SS  
SW  
C
B
35V  
LTC1625  
4
5
13  
12  
R
0.22µF  
C
FCB  
TG  
M3  
10k  
NDT410EL  
I
TH  
BOOST  
R1  
4.7k  
C
VCC  
C
C2  
V
3.3V  
4A  
D
OUT  
B
C
4.7µF  
C1  
220pF  
CMDSH-3  
470pF  
6
11  
C
OUT  
SGND  
INTV  
D2  
CDMSH-3  
CC  
+
+
100µF  
7
8
10  
9
10V  
C1  
0.01µF  
M2  
IRLR3103  
V
V
BG  
OSENSE  
0.065Ω  
×3  
PGND  
PROG  
D1  
MBRS140T3  
1625 TA04  
C
: SANYO 30SC10M  
IN  
C
C
: AVX TPSD107M010R0065  
OUT  
SEC  
: AVX TAJB335M035R  
T1: BH ELECTRONICS 510-1079  
*YES! USE A STANDARD RECOVERY DIODE  
12V/2.2A Adjustable Output  
R
F
4.7Ω  
V
IN  
12.5V TO 28V  
C
IN  
C
F
+
1
16  
22µF  
35V  
×2  
0.1µF  
EXTV  
V
IN  
CC  
C
SS  
2
3
15  
14  
M1  
0.1µF  
SYNC  
TK  
Si4412DY  
L1  
27µH  
RUN/SS  
SW  
C
C
V
12V  
2A  
LTC1625  
OUT  
4
5
13  
12  
R
470pF  
C
FCB  
TG  
22k  
I
BOOST  
TH  
C
R2  
35.7k  
1%  
VCC  
D
B
C
B
C
4.7µF  
OUT  
CMDSH-3  
+
0.1µF  
68µF  
6
11  
SGND  
INTV  
CC  
20V  
+
R1  
3.92k  
1%  
0.15Ω  
×2  
7
8
10  
9
M2  
Si4412DY  
V
V
BG  
OSENSE  
OPEN  
PGND  
PROG  
1625TA06  
C
: AVX TPSE226M020R0300  
OUT  
IN  
C
: AVX TPSE686M020R0150  
L1: SUMIDA CDRH127-270MC  
21  
LTC1625  
TYPICAL APPLICATIONS  
U
5V/4.5A Positive to Negative Converter  
R
F
4.7  
V
IN  
5V TO 10V  
C
F
0.1µF  
1
16  
EXTV  
V
IN  
CC  
C
+
IN  
M1  
FDS6670A  
2
3
15  
14  
220µF  
SYNC  
TK  
16V  
L1  
RUN/SS  
SW  
6µH  
C
C1  
2.2nF  
C
B
LTC1625  
4
5
13  
12  
C
R
SS  
C
0.22µF  
FCB  
TG  
0.1µF  
10k  
I
TH  
BOOST  
C
D
D
1
C2  
B
220pF  
C
CMDSH-3  
MBR140T3  
+
OUT  
6
7
11  
10  
470µF  
SGND  
INTV  
CC  
6.3V  
M2  
FDS6670A  
V
BG  
OSENSE  
+
C
VCC  
4.7µF  
V
OUT  
8
9
–5V  
V
PGND  
PROG  
4.5A  
1625TA08  
C
C
: SANYO 16SV220M  
OUT  
L1: MAGNETICS Kool-Mµ 77120-A7, 9 TURNS, 17 GAUGE  
IN  
: SANYO 6SV470M  
Single Inductor, Positive Output Buck Boost  
R
F
4.7  
V
V
I
IN  
IN  
OUT  
6V TO 18V  
C
F
18  
12  
6
4.0  
3.3  
2.0  
0.1µF  
C
IN  
+
1
16  
68µF  
20V  
x2  
EXTV  
V
IN  
CC  
M1  
C
SS  
2
3
15  
14  
D2  
Si4420DY  
0.1µF  
SYNC  
TK  
MBRS340T3  
L1  
RUN/SS  
SW  
18µH  
4
5
13  
12  
V
OUT  
FCB  
TG  
C
12V  
B
LTC1625  
R
C
0.33µF  
10k  
M4  
Si4425DY  
I
BOOST  
C1  
TH  
R1  
100k  
C
470pF  
C2  
D
C
OUT  
100µF  
16V  
B
D3  
BAT85  
C
C1  
220pF  
+
CMDSH-3  
2.2nF  
6
7
11  
10  
SGND  
INTV  
CC  
30mΩ  
x2  
M2  
8
2
M3  
V
BG  
Si4420DY  
1
7
OSENSE  
Z1  
R1  
3.92k  
Si4420DY  
+
D1  
MBRS  
340T3  
MMBZ  
5240  
10V  
C
VCC  
1/2  
4.7µF  
LTC1693-2  
8
9
V
PGND  
PROG  
R2  
35.7k  
C2  
4
6
0.1µF  
5
3
D4  
BAT85  
D5  
BAT85  
1/2  
LTC1693-2  
1625TA09  
C
C
: SANYO 20S68M  
OUT  
L1: 7A, 18µH Kool-Mµ 77120-A7, 15 TURNS, 17 GAUGE  
IN  
: SANYO 16SA100M  
22  
LTC1625  
U
Dimensions in inches (millimeters) unless otherwise noted.  
PACKAGE DESCRIPTION  
GN Package  
16-Lead Plastic SSOP (Narrow 0.150)  
(LTC DWG # 05-08-1641)  
0.189 – 0.196*  
(4.801 – 4.978)  
0.009  
(0.229)  
REF  
16 15 14 13 12 11 10 9  
0.229 – 0.244  
(5.817 – 6.198)  
0.150 – 0.157**  
(3.810 – 3.988)  
1
2
3
4
5
6
7
8
0.015 ± 0.004  
(0.38 ± 0.10)  
× 45°  
0.053 – 0.068  
(1.351 – 1.727)  
0.004 – 0.0098  
(0.102 – 0.249)  
0.007 – 0.0098  
(0.178 – 0.249)  
0° – 8° TYP  
0.016 – 0.050  
(0.406 – 1.270)  
0.008 – 0.012  
(0.203 – 0.305)  
0.025  
(0.635)  
BSC  
*
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH  
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE  
GN16 (SSOP) 0398  
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD  
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE  
S Package  
16-Lead Plastic Small Outline (Narrow 0.150)  
(LTC DWG # 05-08-1610)  
0.386 – 0.394*  
(9.804 – 10.008)  
16  
15  
14  
13  
12  
11  
10  
9
0.150 – 0.157**  
0.228 – 0.244  
(3.810 – 3.988)  
(5.791 – 6.197)  
5
7
8
1
2
3
4
6
0.010 – 0.020  
(0.254 – 0.508)  
× 45°  
0.053 – 0.069  
(1.346 – 1.752)  
0.004 – 0.010  
(0.101 – 0.254)  
0.008 – 0.010  
(0.203 – 0.254)  
0° – 8° TYP  
0.050  
(1.270)  
TYP  
0.014 – 0.019  
(0.355 – 0.483)  
0.016 – 0.050  
0.406 – 1.270  
S16 0695  
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH  
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE  
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD  
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE  
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.  
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-  
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.  
23  
LTC1625  
U
TYPICAL APPLICATION  
3.3V/1.8A Fixed Output  
V
IN  
5V TO 28V  
C
1
16  
IN  
+
EXTV  
CC  
V
IN  
15µF  
35V  
×2  
C
SS  
2
3
15  
14  
M1  
0.1µF  
SYNC  
TK  
1/2 Si4936DY  
RUN/SS  
SW  
L1  
C
27µH  
C1  
V
LTC1625  
OUT  
4
5
13  
12  
R
1nF  
C
OPEN  
FCB  
TG  
3.3V  
1.8A  
10k  
I
TH  
BOOST  
C
VCC  
C
D
B
CMDSH-3  
C2  
C
4.7µF  
B
C
100pF  
OUT  
0.1µF  
6
11  
+
100µF  
10V  
SGND  
INTV  
CC  
+
7
8
10  
9
0.1Ω  
×2  
M2  
1/2 Si4936DY  
V
V
BG  
OSENSE  
PGND  
PROG  
D1  
MBRS140T3  
1625 TA07  
C
C
: AVX TPSD156M035R0300  
IN  
: AVX TPSD107M010R0100  
OUT  
L1: SUMIDA CDRH125-270MC  
RELATED PARTS  
PART NUMBER  
LTC1435A  
DESCRIPTION  
High Efficiency Synchronous Step-Down Controller  
COMMENTS  
Optimized for Low Duty Cycle Battery to CPU Power Applications  
PLL Synchronization and Auxiliary Linear Regulator  
Power-On Reset and Low-Battery Comparator  
LTC1436A-PLL  
LTC1438  
High Efficiency Low Noise Synchronous Step-Down Controller  
Dual High Efficiency Step-Down Controller  
LTC1530  
High Power Synchronous Step-Down Controller  
SO-8 with Current Limit, No R  
Frequency Ideal for 5V to 3.3V  
Saves Space, Fixed  
SENSE  
LTC1538-AUX  
LTC1649  
Dual High Efficiency Step-Down Controller  
3.3V Input High Power Step-Down Controller  
5V Standby Output and Auxiliary Linear Regulator  
2.7V to 5V Input, 90% Efficiency, Ideal for 3.3V to 1.xV – 2.xV  
Up to 20A  
1625f LT/TP 1298 4K • PRINTED IN USA  
LINEAR TECHNOLOGY CORPORATION 1998  
Linear Technology Corporation  
1630 McCarthy Blvd., Milpitas, CA 95035-7417  
24  
(408)432-1900 FAX:(408)434-0507 www.linear-tech.com  

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