LTC3788EUHPBF [Linear]
2-Phase, Dual Output Synchronous Boost Controller; 两相双路输出同步升压型控制器型号: | LTC3788EUHPBF |
厂家: | Linear |
描述: | 2-Phase, Dual Output Synchronous Boost Controller |
文件: | 总32页 (文件大小:367K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC3788
2-Phase, Dual Output
Synchronous Boost Controller
FEATURES
DESCRIPTION
The LTC®3788 is a high performance 2-phase dual
synchronous boost converter controller that drives all
N-channel power MOSFETs. Synchronous rectification
increases efficiency, reduces power losses and eases
thermal requirements, allowing the LTC3788 to be used
in high power boost applications.
n
Synchronous Operation for Highest Efficiency and
Reduced Heat Dissipation
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Wide Input Range: 4.5V to 38V (40V Abs Max) and
Operates Down to 2.5V After Start-Up
Output Voltages Up to 60V
±±1 ±.2V Reference Voltage
n
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R
or Inductor DCR Current Sensing
SENSE
A constant-frequency current mode architecture allows a
phase-lockable frequency of up to 850kHz. OPTI-LOOP®
compensationallowsthetransientresponsetobeoptimized
over a wide range of output capacitance and ESR values.
The LTC3788 features a precision 1.2V reference and dual
power good output indicators. A 4.5V to 38V input supply
range encompasses a wide range of system architectures
and battery chemistries.
n
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±001 Duty Cycle Capability for Synchronous MOSFET
Low Quiescent Current: 125μA
Phase-Lockable Frequency (75kHz to 850kHz)
Programmable Fixed Frequency (50kHz to 900kHz)
Selectable Current Limit
Adjustable Output Voltage Soft-Start
Power Good Output Voltage Monitors
Low Shutdown Current I : <8ꢀA
Internal LDO Powers Gate Drive from VBIAS or EXTV
Thermally Enhanced Low Profile 32-Pin 5mm × 5mm
QFN Package
Q
Independent SS pins for each controller ramp the output
CC
voltages during start-up. The PLLIN/MODE pin selects
among Burst Mode® operation, pulse-skipping mode or
continuous inductor current mode at light loads.
APPLICATIONS
For a leaded 28-lead SSOP package with a fixed current
limit and one PGOOD output, without phase modulation
or a clock output, see the LTC3788-1 data sheet.
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Industrial
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Automotive
L, LT, LTC, LTM, Linear Technology, Burst Mode, OPTI-LOOP, PolyPhase and the Linear logo
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Medical
are registered trademarks and No R
and ThinSOT are trademarks of Linear Technology
SENSE
Corporation. All other trademarks are the property of their respective owners. Protected by
U. S. Patents, including 5408150, 5481178, 5705919, 5929620, 6144194, 6177787, 6580258.
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Military
V
4.5V TO 12V START-UP VOLTAGE
IN
OPERATES THROUGH TRANSIENTS DOWN TO 2.5V
TYPICAL APPLICATION
V
IN
Efficiency and Power Loss
vs Output Current
4.7μF
TG2
4.7μF
220μF
3mΩ
4mΩ
100
90
10000
1000
100
10
TG1 VBIAS INTV
BOOST1
CC
3.3μH
1.25μH
BOOST2
SW2
V
V
OUT
12V AT 5A
OUT
24V AT 3A
80
0.1μF
0.1μF
SW1
70
LTC3788
BG1
BG2
60
50
+
+
SENSE1
SENSE2
40
30
20
10
0
–
–
SENSE1
SENSE2
PGND
VFB2
V
V
= 12V
IN
OUT
1
110k
232k
= 24V
VFB1
Burst Mode OPERATION
FIGURE 9 CIRCUIT
FREQ
0.1
0.00001 0.0001 0.001 0.01
0.1
1
10
PLLIN/MODE
OUTPUT CURRENT (A)
ITH1 SS1 SGND SS2 ITH2
3788 TA01b
15nF
220μF
220μF
15nF
2.7k
100pF
0.1μF
220pF
12.1k
8.66k
12.1k
0.1μF
3788 TA01a
3788fa
1
LTC3788
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATION
(Notes ±, 3)
TOP VIEW
VBIAS......................................................... –0.3V to 40V
BOOST1, BOOST2...................................... –0.3V to 76V
SW1, SW2 ................................................. –0.3V to 70V
RUN1, RUN2................................................ –0.3V to 8V
Maximum Current Sourced into Pin
32 31 30 29 28 27 26 25
–
SENSE1
FREQ
1
2
3
4
5
6
7
8
24 BOOST1
23 BG1
from Source > 8V..............................................100μA
PGOOD1, PGOOD2, PLLIN/MODE ............... –0.3V to 6V
PHASMD
CLKOUT
PLLIN/MODE
SGND
VBIAS
PGND
22
21
33
GND
INTV , (BOOST1-SW1, BOOST2-SW2) ...... –0.3V to 6V
CC
20 EXTV
CC
CC
EXTV ......................................................... –0.3V to 6V
CC
INTV
19
18 BG2
17 BOOST2
+
+
+
+
–
–
SENSE1 , SENSE1 ,
RUN1
SENSE2 , SENSE2 .................................... –0.3V to 40V
RUN2
–
–
SENSE1 – SENSE1 ,
9
10 11 12 13 14 15 16
SENSE2 – SENSE2 ................................. –0.3V to 0.3V
, SS1, SS2, ITH1, ITH2, FREQ,
I
LIM
PHASMD, VFB1, VFB2 .......................... –0.3V to INTV
CC
UH PACKAGE
32-LEAD (5mm s 5mm) PLASTIC QFN
Operating Junction Temperature Range... –40°C to 125°C
T
= 125°C, θ = 34°C/W
JA
EXPOSED PAD (PIN 33) IS GND, MUST BE SOLDERED TO PCB
JMAX
Storage Temperature Range...................–65°C to 125°C
ORDER INFORMATION
LEAD FREE FINISH
LTC3788EUH#PBF
LTC3788IUH#PBF
TAPE AND REEL
PART MARKING*
3788
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC3788EUH#TRPBF
LTC3788IUH#TRPBF
–40°C to 125°C
–40°C to 125°C
32-Lead (5mm × 5mm) Plastic QFN
32-Lead (5mm × 5mm) Plastic QFN
3788
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are at TA = 25°C, VBIAS = ±2V, unless otherwise noted (Note 2).
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Main Control Loop
VBIAS
Chip Bias Voltage Operating Range
Regulated Feedback Voltage
Feedback Current
4.5
38
1.212
50
V
V
l
V
I
= 1.2V (Note 4)
1.188
1.200
5
FB1,2
FB1,2
TH
I
(Note 4)
nA
V
Reference Line Voltage Regulation
VBIAS = 6V to 38V
0.002
0.02
%/V
REFLNREG
3788fa
2
LTC3788
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are at TA = 25°C, VBIAS = ±2V, unless otherwise noted (Note 2).
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
Output Voltage Load Regulation
(Note 4)
LOADREG
l
l
Measured in Servo Loop;
TH
0.01
–0.01
2
0.1
%
%
ΔI Voltage = 1.2V to 0.7V
Measured in Servo Loop;
–0.1
ΔI Voltage = 1.2V to 2V
TH
g
Error Amplifier Transconductance
Input DC Supply Current
I
TH
= 1.2V
mmho
m1,2
I
Q
(Note 5)
Pulse-Skipping or Forced Continuous Mode RUN1 = 5V and RUN2 = 0V or RUN1 = 0V
(One Channel On) and RUN2 = 5V; V = 1.25V (No Load)
0.9
1.2
mA
mA
μA
FB1(2)
Pulse-Skipping or Forced Continuous Mode RUN1,2 = 5V; V
(Both Channels On)
= 1.25V (No Load)
FB1,2
Sleep Mode
(One Channel On)
RUN1 = 5V and RUN2 = 0V or RUN1 = 0V
and RUN2 = 5V; V = 1.25V (No Load)
125
200
190
300
FB1(2)
Sleep Mode
(Both Channels On)
RUN1,2 = 5V; V
= 1.25V (No Load)
μA
FB1,2
Shutdown
RUN1,2 = 0V
8
20
μA
V
l
l
l
UVLO
INTV Undervoltage Lockout Thresholds
V
V
V
Ramping Up
4.1
3.8
1.28
100
4.5
0.5
10
4.3
CC
INTVCC
Ramping Down
3.6
V
INTVCC
V
V
RUN Pin On Threshold
RUN Pin Hysteresis
Rising
1.18
1.38
V
RUN1,2
RUNHYS
RUN1,2
RUN1,2
SS1,2
RUN
mV
μA
μA
μA
mV
mV
mV
V
I
I
I
RUN Pin Hysteresis Current
RUN Pin Current
V
V
V
V
V
V
> 1.28V
RUN
< 1.28V
RUN
Soft-Start Charge Current
Maximum Current Sense Threshold
= GND
7
13
110
82
SS
FB
FB
FB
l
l
l
V
= 1.1V, I = INTV
CC
90
68
42
2.5
100
75
SENSE(MAX)
LIM
= 1.1V, I = Float
LIM
= 1.1V, I = GND
50
56
LIM
V
SENSE Pins Common Mode Range (BOOST
Converter Input Supply Voltage V )
38
SENSE(CM)
IN
+
I
I
t
t
t
t
+
–
SENSE Pin Current
V
V
C
C
C
C
= 1.1V, I = Float
200
300
1
μA
μA
ns
ns
ns
ns
Ω
SENSE1,2
SENSE1,2
r(TG1,2)
f(TG1,2)
r(BG1,2)
f(BG1,2)
FB
LIM
–
SENSE Pin Current
= 1.1V, I = Float
LIM
FB
Top Gate Rise Time
= 3300pF (Note 6)
= 3300pF (Note 6)
= 3300pF (Note 6)
= 3300pF (Note 6)
20
20
LOAD
LOAD
LOAD
LOAD
Top Gate Fall Time
Bottom Gate Rise Time
20
Bottom Gate Fall Time
20
R
R
R
R
Top Gate Pull-Up Resistance
Top Gate Pull-Down Resistance
Bottom Gate Pull-Up Resistance
Bottom Gate Pull-Down Resistance
1.2
1.2
1.2
1.2
70
UP(TG1,2)
DN(TG1,2)
UP(TG1,2)
DN(TG1,2)
D(TG/BG)
Ω
Ω
Ω
t
Top Gate Off to Bottom Gate On
Switch-On Delay Time
C
C
= 3300pF (Each Driver)
= 3300pF (Each Driver)
ns
LOAD
LOAD
t
Bottom Gate Off to Top Gate On
Switch-On Delay Time
70
96
ns
D(BG/TG)
DF
Maximum BG Duty Factor
%
MAX(BG1,2)
3788fa
3
LTC3788
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are at TA = 25°C, VBIAS = ±2V, unless otherwise noted (Note 2).
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
t
Minimum BG On-Time
(Note 7)
110
ns
ON(MIN)
INTV Linear Regulator
CC
V
V
V
V
V
V
Internal V Voltage
6V < VBIAS < 38V, V = 0V
EXTVCC
5.2
5.2
4.5
5.4
0.5
5.4
0.5
4.8
250
5.6
2
V
%
V
INTVCCVIN
LDOVIN
CC
INTV Load Regulation
I
CC
= 0mA to 50mA, V
= 0V
CC
EXTVCC
Internal V Voltage
V = 6V
EXTVCC
5.6
2
INTVCCEXT
LDOEXT
CC
INTV Load Regulation
I
CC
= 0mA to 40mA, V
= 6V
%
V
CC
EXTVCC
EXTV Switchover Voltage
EXTV Ramping Positive
5
EXTVCC
CC
CC
EXTV Hysteresis
mV
LDOHYS
CC
Oscillator and Phase-Locked Loop
f
Programmable Frequency
R
R
R
= 25k
= 60k
= 100k
= 0V
105
400
760
350
535
kHz
kHz
kHz
kHz
kHz
kHz
PROG
FREQ
FREQ
FREQ
FREQ
FREQ
335
465
f
f
f
Lowest Fixed Frequency
Highest Fixed Frequency
Synchronizable Frequency
V
V
320
485
75
380
585
850
LOW
HIGH
SYNC
= INTV
CC
l
PLLIN/MODE = External Clock
PGOOD± and PGOOD2 Outputs
V
PGOOD Voltage Low
PGOOD Leakage Current
PGOOD Trip Level
I
= 2mA
= 5V
0.2
0.4
1
V
PGL
PGOOD
I
V
V
V
μA
PGOOD
PGOOD
V
PG
with Respect to Set Regulated Voltage
Ramping Negative
FB
FB
–12
8
–10
2.5
10
–8
12
%
%
%
%
μs
Hysteresis
Ramping Positive
V
FB
Hysteresis
2.5
25
t
PGOOD Delay
PGOOD Going High to Low
PGOOD(DELAY)
BOOST± and BOOST2 Charge Pump
I
BOOST Charge Pump Available
Output Current
V
= 12V; V
– V = 4.5V;
SW1,2
55
μA
BOOST1,2
SW1,2
BOOST1,2
FREQ = 0V, Forced Continuous or
Pulse-Skipping Mode
Note ±: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 3: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. The maximum
rated junction temperature will be exceeded when this protection is active.
Continuous operation above the specified absolute maximum operating
junction temperature may impair device reliability or permanently damage
the device.
Note 2: The LTC3788 is tested under pulsed load conditions such that T
J
≈ T . The LTC3788E is guaranteed to meet specifications from 0°C to 85°C
A
junction temperature. Specifications over the –40°C to 125°C operating
junction temperature range are assured by design, characterization and
correlation with statistical process controls. The LTC3788I is guaranteed
over the –40°C to 125°C operating junction temperature range. Note that
the maximum ambient temperature consistent with these specifications
is determined by specific operating conditions in conjunction with board
layout, the rated package thermal impedance and other environmental
Note 4: The LTC3788 is tested in a feedback loop that servos V to the
FB
output of the error amplifier while maintaining I at the midpoint of the
TH
current limit range.
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 6: Rise and fall times are measured using 10% and 90% levels.
Delay times are measured using 50% levels.
Note 7: See Minimum On-Time Considerations in the Applications
Information section.
factors. The junction temperature (T , in °C) is calculated from the ambient
J
temperature (T , in °C) and power dissipation (P , in Watts) according to
A
D
the formula: T = T + (P • θ ), where θ = 34°C/W.
J
A
D
JA
JA
3788fa
4
LTC3788
TYPICAL PERFORMANCE CHARACTERISTICS
Efficiency and Power Loss
Efficiency and Power Loss
vs Output Current
vs Output Current
100
90
10000
1000
100
10
100
90
10000
80
80
1000
100
10
70
70
60
50
60
50
40
30
20
10
0
40
30
20
10
0
V
V
= 12V
IN
OUT
1
1
V
V
= 12V
OUT
FIGURE 9 CIRCUIT
= 24V
IN
= 24V
Burst Mode OPERATION
FIGURE 9 CIRCUIT
0.1
0.1
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01
0.1
1
10
OUTPUT CURRENT (A)
OUTPUT CURRENT (A)
3788 G02
3788 G01
BURST EFFICIENCY
BURST LOSS
BURST EFFICIENCY
BURST LOSS
PULSE-SKIPPING
EFFICIENCY
PULSE-SKIPPING
LOSS
CCM EFFICIENCY
CCM LOSS
Load Step
Forced Continuous Mode
Efficiency vs Input Voltage
100
I
= 2A
LOAD
99 FIGURE 9 CIRCUIT
LOAD STEP
2A/DIV
98
V
= 12V
97
96
95
94
93
92
91
90
OUT
INDUCTOR
CURRENT
5A/DIV
V
= 24V
OUT
V
OUT
500mV/DIV
3788 G04
0
5
15
INPUT VOLTAGE (V)
20
25
10
V
V
= 12V
200μs/DIV
IN
OUT
= 24V
3788 G03
FIGURE 9 CIRCUIT
Load Step
Pulse-Skipping Mode
Load Step
Burst Mode Operation
LOAD STEP
2A/DIV
LOAD STEP
2A/DIV
INDUCTOR
CURRENT
5A/DIV
INDUCTOR
CURRENT
5A/DIV
V
V
OUT
OUT
500mV/DIV
500mV/DIV
3788 G05
3788 G06
V
V
= 12V
200μs/DIV
V
V
= 12V
200μs/DIV
IN
OUT
IN
OUT
= 24V
= 24V
FIGURE 9 CIRCUIT
FIGURE 9 CIRCUIT
3788fa
5
LTC3788
TYPICAL PERFORMANCE CHARACTERISTICS
Inductor Current at Light Load
Soft Start-Up
FORCED
CONTINUOUS MODE
Burst Mode
OPERATION
5A/DIV
V
OUT
5V/DIV
PULSE-SKIPPING
MODE
0V
3788 G07
3788 G08
V
V
LOAD
= 12V
5μs/DIV
V
V
= 12V
20ms/DIV
IN
IN
OUT
= 24V
= 24V
OUT
I
= 200μA
FIGURE 9 CIRCUIT
FIGURE 9 CIRCUIT
Regulated Feedback Voltage
vs Temperature
Soft-Start Pull-Up Current
vs Temperature
1.212
11.0
10.5
10.0
9.5
1.209
1.206
1.203
1.200
1.197
1.194
1.191
1.188
9.0
–20
5
55
80 105 130
–45
30
–20
5
55
80 105 130
–45
30
TEMPERATURE (°C)
TEMPERATURE (°C)
3788 G09
3788 G10
Shutdown Current
vs Input Voltage
Shutdown Current vs Temperature
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
20
15
10
5
V
= 12V
IN
0
–20
5
55
80 105 130
–45
30
5
10
20 25 30 35 40
15
INPUT VOLTAGE (V)
0
TEMPERATURE (°C)
3788 G11
3788 G12
3788fa
6
LTC3788
TYPICAL PERFORMANCE CHARACTERISTICS
Shutdown (RUN) Threshold
vs Temperature
Quiescent Current vs Temperature
170
160
150
140
130
120
110
100
1.40
1.35
1.30
1.25
1.20
1.15
1.10
V
V
= 12V
IN
FB
= 1.25V
RUN2 = GND
RUN RISING
RUN FALLING
–20
5
55
80 105 130
–20
5
55
80 105 130
–45
30
–45
30
TEMPERATURE (°C)
TEMPERATURE (°C)
3788 G13
3788 G14
Undervoltage Lockout Threshold
vs Temperature
INTVCC Line Regulation
5.5
5.4
5.3
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5
4.4
4.3
4.2
4.1
4.0
3.9
3.8
3.7
3.6
3.5
3.4
INTV RISING
CC
INTV FALLING
CC
5
10
20 25 30 35 40
–20
5
55
80 105 130
0
15
–45
30
INPUT VOLTAGE (V)
TEMPERATURE (°C)
3788 G16
3788 G15
EXTVCC Switchover and INTVCC
Voltages vs Temperature
INTVCC vs INTVCC Load Current
5.50
5.45
5.40
5.35
5.30
5.25
5.20
5.15
5.10
5.05
5.00
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
V
= 12V
IN
EXTV = 0V
INTV
CC
CC
EXTV RISING
CC
EXTV = 6V
CC
EXTV FALLING
CC
40 60 80 100 120 200
140 160 180
0
20
–45
5
30
55
80 105 130
–20
INTV LOAD CURRENT (mA)
TEMPERATURE (°C)
CC
3788 G17
3788 G18
3788fa
7
LTC3788
TYPICAL PERFORMANCE CHARACTERISTICS
Oscillator Frequency
vs Temperature
Oscillator Frequency
vs Input Voltage
360
358
356
354
352
350
348
346
344
342
340
600
550
500
450
400
350
300
FREQ = GND
FREQ = INTV
CC
FREQ = GND
5
10
20
25
30
35
40
15
–45
5
30
55
80 105 130
–20
INPUT VOLTAGE (V)
TEMPERATURE (°C)
3788 G20
3788 G19
SENSE Pin Input Current
vs Temperature
Maximum Current Sense
Threshold vs ITH Voltage
120
100
80
260
240
220
200
180
160
140
120
100
80
V
I
= 12V
SENSE
LIM
= FLOAT
+
SENSE PIN
PULSE SKIPPING MODE
Burst Mode
OPERATION
60
40
20
I
= GND
LIM
0
I
= FLOAT
LIM
LIM
I
= INTV
CC
60
40
20
0
–20
–40
–60
FORCED CONTINUOUS MODE
–
SENSE PIN
0.8
VOLTAGE (V)
1.2 1.4
0
0.2 0.4 0.6
1.0
–45
5
30
55
80 105 130
–20
TEMPERATURE (°C)
I
TH
3788 G22
3788 G21
SENSE Pin Input Current
vs VSENSE Voltage
SENSE Pin Input Current
vs ITH Voltage
260
240
220
200
180
160
140
120
100
80
260
240
220
200
180
160
140
120
100
80
V
= 12V
SENSE
+
I
= INTV
CC
I
= INTV
CC
LIM
SENSE PIN
LIM
I
= FLOAT
= GND
I
= FLOAT
LIM
I
LIM
+
SENSE PIN
LIM
I
= GND
LIM
60
40
20
0
60
40
20
0
I
I
I
= INTV
= FLOAT
= GND
I
I
I
= INTV
CC
= FLOAT
= GND
LIM
LIM
LIM
CC
LIM
LIM
LIM
–
–
SENSE PIN
SENSE PIN
0
1
1.5
2
2.5
3
2.5
17.5 22.5 27.5 32.5 37.5
7.5 12.5
V COMMON MODE VOLTAGE (V)
SENSE
0.5
I
VOLTAGE (V)
TH
3788 G23
3788 G24
3788fa
8
LTC3788
TYPICAL PERFORMANCE CHARACTERISTICS
Maximum Current Sense
Threshold vs Duty Cycle
Charge Pump Charging Current
vs Operating Frequency
120
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
V
V
= 12V
SW
BOOST
– V = 4.5V
SW
I
= INTV
LIM
CC
T = –45°C
T = 25°C
I
= FLOAT
= GND
LIM
I
LIM
T = 130°C
20 30 40 50 60
100
70 80 90
0
10
50 150 250 350 450 550 650 750
OPERATING FREQUENCY (kHz)
DUTY CYCLE (%)
3788 G26
3788 G25
PIN FUNCTIONS
–
–
SENSE± ,SENSE2 (Pin±,Pin9):NegativeCurrentSense
ComparatorInput. The(–)inputtothecurrentcomparator
is normally connected to the negative terminal of a cur-
rent sense resistor connected in series with the inductor.
The common mode voltage range on these pins is 2.5V
to 38V (abs max).
PLLIN/MODE (Pin 5): External Synchronization Input
to Phase Detector and Forced Continuous Mode Input.
When an external clock is applied to this pin, it will force
the controller into forced continuous mode of operation
and the phase-locked loop will force the rising BG1 signal
to be synchronized with the rising edge of the external
clock. When not synchronizing to an external clock, this
input, which acts on both controllers, determines how the
LTC3788 operates at light loads. Pulling this pin to ground
selects Burst Mode operation. An internal 100k resistor to
ground also invokes Burst Mode operation when the pin is
FREQ (Pin 2): The frequency control pin for the internal
VCO. Connecting the pin to GND forces the VCO to a fixed
low frequency of 350kHz. Connecting the pin to INTV
CC
forces the VCO to a fixed high frequency of 535kHz. The
frequency can be programmed from 50kHz to 900kHz
by connecting a resistor from the FREQ pin to GND. The
resistor and an internal 20μA source current create a volt-
age used by the internal oscillator to set the frequency.
Alternatively, this pin can be driven with a DC voltage to
vary the frequency of the internal oscillator.
floated.TyingthispintoINTV forcescontinuousinductor
CC
current operation. Tying this pin to a voltage greater than
1.2V and less than INTV – 1.3V selects pulse-skipping
CC
operation. This can be done by adding a 100k resistor
between the PLLIN/MODE pin and INTV .
CC
SGND (Pin 6): Signal Ground. All small-signal components
and compensation components should connect to this
ground, which in turn connects to PGND at a single point.
PHASMD (Pin 3): This pin can be floated, tied to SGND, or
tied to INTV to program the phase relationship between
CC
the rising edges of BG1 and BG2, as well as the phase
relationship between BG1 and CLKOUT.
RUN±,RUN2(Pin7,Pin8):RunControlInput.Anexternal
resistordividerconnectstoV andsetsthethresholdsfor
IN
CLKOUT (Pin 4): A Digital Output Used for Daisychaining
MultipleLTC3788ICsinMultiphaseSystems.ThePHASMD
pinvoltagecontrolstherelationshipbetweenBG1,BG2and
converteroperationwithathresholdof1.28V.Oncerunning,
a 4.5μA current is sourced from the RUN pin allowing the
user to program hysteresis using the resistor values.
CLKOUT. This pin swings between SGND and INTV .
CC
3788fa
9
LTC3788
PIN FUNCTIONS
PGOOD2 (Pin ±4): Power Good Indicator for Channel 2.
Open-drain logic output that is pulled to ground when
the output voltage is more than 10% away from the
regulated output voltage. To avoid false trips the output
voltage must be outside the range for 25μs before this
output is activated.
PGOOD± (Pin 27): Power Good Indicator for Channel 1.
Open-drain logic output that is pulled to ground when
the output voltage is more than 10% away from the
regulated output voltage. To avoid false trips the output
voltage must be outside the range for 25μs before this
output is activated.
INTV (Pin ±9): Output of Internal 5.4V LDO. Power
ILIM (Pin 28): Current Comparator Sense Voltage Range
Input. This pin is used to set the peak current sense volt-
age in the current comparator. Connect this pin to SGND,
CC
supply for control circuits and gate drives. Decouple this
pin to GND with a minimum 4.7μF low ESR tantalum or
ceramic capacitor.
open and INTV to set the peak current sense voltage to
CC
50mV, 75mV, and 100mV, respectively.
EXTV (Pin 20): External Power Input. When this pin is
CC
higher than 4.8V an internal switch bypasses the inter-
SS±, SS2 (Pin 29, Pin ±3): Output Soft-Start Input. A
capacitor to ground at this pin sets the ramp rate of the
output voltage during start-up.
nal regulator and supply power to INTV directly from
CC
EXTV .
CC
PGND (Pin 2±): Driver Power Ground. Connects to the
ITH±, ITH2 (Pin 30, Pin ±2): Current Control Threshold
and Error Amplifier Compensation Point. The voltage on
this pin sets the current trip threshold.
sources of bottom (main) N-channel MOSFETs and the
(–) terminal(s) of C and C
.
IN
OUT
VBIAS (Pin 22): Main Supply Pin. It is normally tied to the
VFB±, VFB2 (Pin 3±, Pin ±±): Error Amplifier Feedback
Input. This pin receives the remotely sensed feedback
voltagefromanexternalresistivedividerconnectedacross
the output.
input supply V or to the output of the boost converter.
IN
A bypass capacitor should be tied between this pin and
the signal ground pin. The operating voltage range on this
pin is 4.5V to 38V (40V abs max).
+
+
SENSE± , SENSE2 (Pin 32, Pin ±0): Positive Current
Sense Comparator Input. The (+) input to the current
comparator is normally connected to the positive terminal
of a current sense resistor. The current sense resistor is
normally placed at the input of the boost controller in
series with the inductor. This pin also supplies power to
the current comparator.
BG±, BG2 (Pin 23, Pin ±8): Bottom Gate. Connect to the
gate of the main NMOS.
BOOST±,BOOST2(Pin24,Pin±7):Floatingpowersupply
forthesynchronousNMOS.BypasstoSWwithacapacitor
and supply with a Schottky diode connected to INTV .
CC
TG±, TG2 (Pin 25, Pin ±6): Top Gate. Connect to the gate
of the synchronous NMOS.
GND (Exposed Pad Pin 33): Ground. The exposed pad
must be soldered to the circuit board for rated thermal
performance.
SW±, SW2 (Pin 26, Pin ±5): Switch Node. Connect to the
source of the synchronous NMOS, the drain of the main
NMOS and the inductor.
3788fa
10
LTC3788
BLOCK DIAGRAM
INTV
CC
DUPLICATE FOR SECOND CONTROLLER CHANNEL
S
D
B
PHASMD
CLKOUT
BOOST
TG
Q
R
C
B
SHDN
SWITCHING
LOGIC
V
OUT
C
SW
BG
AND
CHARGE
PUMP
20μA
OUT
INTV
CC
FREQ
CLK2
CLK1
VCO
PFD
+
–
0.425V
–
SLEEP
PGND
L
+
+
+
–
+
–
–
–
2mV
SENSE
SENSE
VFB
2.8V
0.7V
PLLIN/
MODE
R
SENSE
+
SLOPE COMP
SENS LO
SYNC
DET
V
IN
C
+
IN
100k
–
2.5V
+
–
–
1.2V
SS
EA
ILIM
CURRENT
LIMIT
+
–
VBIAS
OV
1.32V
C
C
ITH
SHDN
0.5μA/
4.5μA
EXTV
CC
R
C
C
C2
5.4V
LDO
5.4V
LDO
PGOOD
10μA
SS
+
–
1.32V
+
–
11V
EN
EN
3.8V
VFB
SENS
LO
+
–
SHDN
RUN
+
–
1.08V
4.8V
INTV
SGND
CC
3788 BD
C
SS
3788fa
11
LTC3788
OPERATION (Refer to Block Diagram)
Main Control Loop
for that controller. Pulling both pins below 0.7V disables
both controllers and most internal circuits, including the
The LTC3788 uses a constant-frequency, current mode
step-uparchitecturewiththetwocontrollerchannelsoper-
ating 180 or 240 degrees out-of-phase (depending on the
PHASMD pin connection). During normal operation, each
external bottom MOSFET is turned on when the clock for
that channel sets the RS latch, and is turned off when the
main current comparator, ICMP, resets the RS latch. The
peak inductor current at which ICMP trips and resets the
latch is controlled by the voltage on the ITH pin, which is
the output of the error amplifier EA. The error amplifier
compares the output voltage feedback signal at the VFB
pin, (which is generated with an external resistor divider
INTV LDOs. In this state, the LTC3788 draws only 8μA
CC
of quiescent current.
The RUN pin may be externally pulled up or driven directly
by logic. When driving the RUN pin with a low impedance
source, do not exceed the absolute maximum rating of
8V. The RUN pin has an internal 11V voltage clamp that
allows the RUN pin to be connected through a resistor to a
highervoltage(forexample, V ), aslongasthemaximum
IN
current into the RUN pin does not exceed 100μA.
The start-up of each controller’s output voltage V
is
OUT
controlled by the voltage on the SS pin for that channel.
When the voltage on the SS pin is less than the 1.2V
connected across the output voltage, V , to ground) to
OUT
the internal 1.200V reference voltage. When the load cur-
internal reference, the LTC3788 regulates the V voltage
FB
rent increases, it causes a slight decrease in V relative
FB
to the SS pin voltage instead of the 1.2V reference. This
allows the SS pin to be used to program a soft-start by
connectinganexternalcapacitorfromtheSSpintoSGND.
An internal 10μA pull-up current charges this capacitor
creating a voltage ramp on the SS pin. As the SS voltage
to the reference, which causes the EA to increase the I
TH
voltage until the average inductor current matches the
new load current.
After the bottom MOSFET is turned off each cycle, the
top MOSFET is turned on until either the inductor current
starts to reverse, as indicated by the current comparator
IR, or the beginning of the next clock cycle.
rises linearly from 0V to 1.2V (and beyond up to INTV ),
CC
the output voltage V
rises smoothly to its final value.
OUT
Light Load Current Operation—Burst Mode Operation,
Pulse-Skipping or Continuous Conduction
(PLLIN/MODE Pin)
INTV /EXTV Power
CC
CC
Power for the top and bottom MOSFET drivers and most
other internal circuitry is derived from the INTV pin.
The LTC3788 can be enabled to enter high efficiency Burst
Modeoperation,constant-frequencypulse-skippingmode
orforcedcontinuousconductionmodeatlowloadcurrents.
To select Burst Mode operation, tie the PLLIN/ MODE pin
to a ground (e.g., SGND). To select forced continuous
CC
When the EXTV pin is left open or tied to a voltage less
CC
than 4.8V, the VBIAS LDO (low dropout linear regulator)
supplies 5.4V from VBIAS to INTV . If EXTV is taken
CC
CC
above 4.8V, the VBIAS LDO is turned off and an EXTV
CC
operation, tie the PLLIN/MODE pin to INTV . To select
LDO is turned on. Once enabled, the EXTV LDO supplies
CC
CC
pulse-skipping mode, tie the PLLIN/MODE pin to a DC
5.4V from EXTV to INTV . Using the EXTV pin allows
CC
CC
CC
voltage greater than 1.2V and less than INTV – 1.3V.
the INTV power to be derived from a high efficiency
CC
CC
external source such as one of the LTC3788 switching
WhenacontrollerisenabledforBurstModeoperation, the
minimum peak current in the inductor is set to approxi-
mately 30% of the maximum sense voltage even though
the voltage on the ITH pin indicates a lower value. If the
average inductor current is higher than the load current,
the error amplifier EA will decrease the voltage on the ITH
regulator outputs.
Shutdown and Start-Up
(RUN±, RUN2 and SS±, SS2 Pins)
The two channels of the LTC3788 can be independently
shutdownusingtheRUN1andRUN2pins.Pullingeitherof
these pins below 1.28V shuts down the main control loop
pin. When the I voltage drops below 0.425V, the internal
TH
sleep signal goes high (enabling sleep mode) and both
external MOSFETs are turned off.
3788fa
12
LTC3788
OPERATION
In sleep mode, much of the internal circuitry is turned off,
reducing the quiescent current that the LTC3788 draws.
If one channel is shut down and the other channel is in
sleep mode, the LTC3788 draws only 125μA of quiescent
current. If both channels are in sleep mode, the LTC3788
draws only 200μA of quiescent current. In sleep mode,
the load current is supplied by the output capacitor. As
the output voltage decreases, the EA’s output begins to
rise. When the output voltage drops enough, the ITH pin
is reconnected to the output of the EA, the sleep signal
goes low, and the controller resumes normal operation
by turning on the bottom external MOSFET on the next
cycle of the internal oscillator.
operation. It provides higher low current efficiency than
forced continuous mode, but not nearly as high as Burst
Mode operation.
Frequency Selection and Phase-Locked Loop (FREQ
and PLLIN/MODE Pins)
Theselectionofswitchingfrequencyisatrade-offbetween
efficiency and component size. Low frequency opera-
tion increases efficiency by reducing MOSFET switching
losses, but requires larger inductance and/or capacitance
to maintain low output ripple voltage.
The switching frequency of the LTC3788’s controllers can
be selected using the FREQ pin.
When a controller is enabled for Burst Mode operation,
the inductor current is not allowed to reverse. The reverse
currentcomparator(IR)turnsoffthetopexternalMOSFET
just before the inductor current reaches zero, preventing
it from reversing and going negative. Thus, the controller
operates in discontinuous current operation.
If the PLLIN/MODE pin is not being driven by an external
clock source, the FREQ pin can be tied to SGND, tied to
INTV , or programmed through an external resistor.
CC
Tying FREQ to SGND selects 350kHz while tying FREQ to
INTV selects 535kHz. Placing a resistor between FREQ
CC
andSGNDallowsthefrequencytobeprogrammedbetween
In forced continuous operation or when clocked by an
external clock source to use the phase-locked loop (see
theFrequencySelectionandPhase-LockedLoopsection),
the inductor current is allowed to reverse at light loads or
under large transient conditions. The peak inductor cur-
rent is determined by the voltage on the ITH pin, just as
in normal operation. In this mode, the efficiency at light
loads is lower than in Burst Mode operation. However,
continuous operation has the advantages of lower output
voltage ripple and less interference to audio circuitry, as
it maintains constant-frequency operation independent
of load current.
50kHz and 900kHz, as shown in Figure 6.
A phase-locked loop (PLL) is available on the LTC3788
to synchronize the internal oscillator to an external clock
source that is connected to the PLLIN/MODE pin. The
LTC3788’s phase detector adjusts the voltage (through
an internal lowpass filter) of the VCO input to align the
turn-on of the first controller’s external bottom MOSFET
to the rising edge of the synchronizing signal. Thus, the
turn-onofthesecondcontroller’sexternalbottomMOSFET
is 180 or 240 degrees out-of-phase to the rising edge of
the external clock source.
The VCO input voltage is prebiased to the operating fre-
quency set by the FREQ pin before the external clock is
applied. If prebiased near the external clock frequency,
the PLL loop only needs to make slight changes to the
VCO input in order to synchronize the rising edge of the
external clock’s to the rising edge of BG1. The ability to
prebias the loop filter allows the PLL to lock-in rapidly
without deviating far from the desired frequency.
When the PLLIN/MODE pin is connected for pulse-skip-
ping mode, the LTC3788 operates in PWM pulse-skipping
mode at light loads. In this mode, constant-frequency
operation is maintained down to approximately 1% of
designedmaximumoutputcurrent. Atverylightloads, the
current comparator I
may remain tripped for several
CMP
cycles and force the external bottom MOSFET to stay off
for the same number of cycles (i.e., skipping pulses). The
inductor current is not allowed to reverse (discontinuous
operation). This mode, like forced continuous operation,
exhibits low output ripple as well as low audio noise and
reduced RF interference as compared to Burst Mode
The typical capture range of the LTC3788’s PLL is from
approximately 55kHz to 1MHz, and is guaranteed to
lock to an external clock source whose frequency is be-
tween 75kHz and 850kHz.
3788fa
13
LTC3788
OPERATION
The typical input clock thresholds on the PLLIN/MODE
pin are 1.6V (rising) and 1.2V (falling).
this same V window, then TG remains off regardless of
IN
the inductor current.
If V rises above 110% of the regulated V
voltage in
IN
OUT
PolyPhase Applications (CLKOUT and PHASMD Pins)
any mode, the controller turns on TG regardless of the
inductor current. In Burst Mode operation, however, the
internal charge pump turns off if the entire chip is asleep
(theotherchannelisasleeporshutdown).Withthecharge
pump off, there would be nothing to prevent the boost
capacitor from discharging, resulting in an insufficient TG
voltage needed to keep the top MOSFET completely on.
To prevent excessive power dissipation across the body
diode of the top MOSFET in this situation, the chip can be
switched over to forced continuous mode to enable the
charge pump, or a Schottky diode can also be placed in
parallel to the top MOSFET.
The LTC3788 features two pins (CLKOUT and PHASMD)
that allow other controller ICs to be daisychained with the
LTC3788 in PolyPhase® applications. The clock output
signal on the CLKOUT pin can be used to synchronize
additional power stages in a multiphase power supply
solution feeding a single, high current output or multiple
separate outputs. The PHASMD pin is used to adjust the
phase of the CLKOUT signal as well as the relative phases
between the two internal controllers, as summarized in
Table 1. The phases are calculated relative to the zero
degrees phase being defined as the rising edge of the
bottom gate driver output of controller 1 (BG1).
Power Good
Table ±.
The PGOOD1, 2 pin is connected to an open-drain of an
internal N-channel MOSFET. The MOSFET turns on and
pulls the PGOOD1, 2 pin low when the corresponding
VFB1, 2 pin voltage is not within 10% of the 1.2V refer-
ence voltage. The PGOOD1, 2 pin is also pulled low when
the corresponding RUN1, 2 pin is low (shut down). When
theVFB1, 2pinvoltageiswithinthe 10%requirement,the
MOSFET is turned off and the pin is allowed to be pulled
up by an external resistor to a source of up to 6V.
CONTROLLER 2
PHASE (°C)
CLKOUT
V
PHASE (°C)
PHASMD
GND
180
180
240
60
90
Floating
INTV
120
CC
CLKOUT is disabled when one of the channels is in sleep
mode and another channel is either in shutdown or in
sleep mode.
Operation at Low SENSE Pin Common Voltage
Operation When V > V
IN
OUT
The current comparator in the LTC3788 is powered di-
When V rises above the regulated V
voltage, the
IN
OUT
+
rectly from the SENSE pin. This enables the common
boost controller can behave differently depending on the
+
–
modevoltageofSENSE andSENSE pinstooperateatas
lowas2.5V, whichisbelowtheUVLOthreshold. Thefigure
on the first page shows a typical application when the
mode, inductor current and V voltage. In forced con-
IN
tinuous mode, the loop works to keep the top MOSFET
on continuously once V rises above V . The internal
IN
OUT
charge pump delivers current to the boost capacitor to
controller’s VBIAS is powered from V
while V supply
OUT
IN
+
maintain a sufficiently high TG voltage.
can go as low as 2.5V. If the voltage on SENSE drops
below 2.5V, the SS pin will be held low. When the SENSE
voltage returns to the normal operating range, the SS pin
will be released, initiating a new soft-start cycle.
In pulse-skipping mode, if V is between 100% and
IN
110% of the regulated V
voltage, TG turns on if the
OUT
inductor current rises above a certain threshold and turns
off if the inductor current falls below this threshold. This
threshold current is set to approximately 6%, 4% or
BOOST Supply Refresh and Internal Charge Pump
Each top MOSFET driver is biased from the floating
3% of the maximum I
current when the ILIM pin is
LIM
bootstrap capacitor C , which normally recharges during
grounded, floating or tied to INTV , respectively. If the
B
CC
each cycle through an external diode when the bottom
controller is programmed to Burst Mode operation under
3788fa
14
LTC3788
OPERATION
MOSFET turns on. There are two considerations to keep
the BOOST supply at the required bias level. During
start-up, if the bottom MOSFET is not turned on within
100μs after UVLO goes low, the bottom MOSFET will be
forced to turn on for ~400ns. This forced refresh gener-
ates enough BOOST-SW voltage to allow the top MOSFET
ready to be fully enhanced instead of waiting for the initial
few cycles to charge up. There is also an internal charge
pump that keeps the required bias on BOOST. The charge
pump always operates in both forced continuous mode
and pulse-skipping mode. In Burst Mode operation, the
charge pump is turned off during sleep and enabled when
the chip wakes up. The internal charge pump can normally
supply a charging current of 55μA.
APPLICATIONS INFORMATION
The Typical Application on the first page is a basic
LTC3788 application circuit. LTC3788 can be configured
to use either inductor DCR (DC resistance) sensing or a
rent elsewhere can effectively add parasitic inductance
and capacitance to the current sense element, degrading
the information at the sense terminals and making the
programmed current limit unpredictable. If DCR sensing
is used (Figure 2b), sense resistor R1 should be placed
closetotheswitchingnode,topreventnoisefromcoupling
into sensitive small-signal nodes.
discrete sense resistor (R
) for current sensing. The
SENSE
choicebetweenthetwocurrentsensingschemesislargely
a design trade-off between cost, power consumption and
accuracy. DCR sensing is becoming popular because it
does not require current sensing resistors and is more
power-efficient, especially in high current applications.
However, current sensing resistors provide the most
accurate current limits for the controller. Other external
component selection is driven by the load requirement,
TO SENSE FILTER,
NEXT TO THE CONTROLLER
V
IN
INDUCTOR OR R
3788 F01
SENSE
and begins with the selection of R
(if R
is used)
SENSE
SENSE
andinductorvalue.Next,thepowerMOSFETsareselected.
Finally, input and output capacitors are selected.
Figure ±. Sense Lines Placement with
Inductor or Sense Resistor
+
–
Sense Resistor Current Sensing
A typical sensing circuit using a discrete resistor is shown
SENSE and SENSE Pins
+
–
The SENSE and SENSE pins are the inputs to the cur-
rent comparators. The common mode input voltage range
of the current comparators is 2.5V to 38V. The current
sense resistor is normally placed at the input of the boost
controller in series with the inductor.
in Figure 2a. R
output current.
is chosen based on the required
SENSE
The current comparator has a maximum threshold
V
. When the ILIM pin is grounded, floating or
CC
SENSE(MAX)
+
tied to INTV , the maximum threshold is set to 50mV,
TheSENSE pinalsoprovidespowertothecurrentcompara-
75mV or 100mV, respectively. The current comparator
tor.Itdraws~200μAduringnormaloperation.Thereisasmall
–
threshold sets the peak of the inductor current, yielding
basecurrentoflessthan1μAthatflowsintotheSENSE pin.
–
a maximum average output current, I
, equal to the
The high impedance SENSE input to the current com-
MAX
peak value less half the peak-to-peak ripple current, ΔI .
parators allow accurate DCR sensing.
L
To calculate the sense resistor value, use the equation:
Filter components mutual to the sense lines should be
placed close to the LTC3788, and the sense lines should
run close together to a Kelvin connection underneath the
current sense element (shown in Figure 1). Sensing cur-
VSENSE(MAX)
RSENSE
=
ΔIL
IMAX
+
2
3788fa
15
LTC3788
APPLICATIONS INFORMATION
VBIAS
V
VBIAS
V
IN
IN
+
+
SENSE
SENSE
C1
R2
(OPTIONAL)
DCR
L
–
–
SENSE
SENSE
INTV
CC
INTV
CC
INDUCTOR
R1
LTC3788
LTC3788
BOOST
BOOST
TG
TG
V
SW
BG
V
OUT
SW
BG
OUT
SGND
SGND
3788 F02b
3788 F02a
L
DCR
R2
R1 + R2
||
(R1 R2) • C1 =
R
= DCR •
PLACE C1 NEAR SENSE PINS
SENSE(EQ)
(2a) Using a Resistor to Sense Current
(2b) Using the Inductor DCR to Sense Current
Figure 2. Two Different Methods of Sensing Current
When using the controller in low V and very high voltage
always the same and varies with temperature. Consult the
manufacturer’s data sheets for detailed information.
IN
outputapplications,themaximumoutputcurrentlevelwill
be reduced due to the internal compensation required to
meet stability criterion for boost regulators operating at
greater than 50% duty factor. A curve is provided in the
Typical Performance Characteristics section to estimate
thisreductioninpeakoutputcurrentleveldependingupon
the operating duty factor.
Usingtheinductorripplecurrentvaluefromtheinductorval-
ue calculation section, the target sense resistor value is:
VSENSE(MAX)
RSENSE(EQUIV)
=
ΔIL
IMAX
+
2
To ensure that the application will deliver full load current
over the full operating temperature range, choose the
minimum value for the maximum current sense threshold
Inductor DCR Sensing
For applications requiring the highest possible efficiency
at high load currents, the LTC3788 is capable of sensing
the voltage drop across the inductor DCR, as shown in
Figure 2b. The DCR of the inductor can be less than 1mΩ
for high current inductors. In a high current application
requiring such an inductor, conduction loss through a
sense resistor could reduce the efficiency by a few percent
compared to DCR sensing.
(V
).
SENSE(MAX)
Next, determine the DCR of the inductor. Where provided,
use the manufacturer’s maximum value, usually given at
20°C. Increase this value to account for the temperature
coefficientofresistance,whichisapproximately0.4%/°C.A
conservativevalueforthemaximuminductortemperature
(T
L(MAX)
) is 100°C.
If the external R1||R2 • C1 time constant is chosen to be
exactly equal to the L/DCR time constant, the voltage drop
across the external capacitor is equal to the drop across
theinductorDCRmultipliedbyR2/(R1+R2).R2scalesthe
voltage across the sense terminals for applications where
the DCR is greater than the target sense resistor value.
To properly dimension the external filter components, the
DCR of the inductor must be known. It can be measured
using a good RLC meter, but the DCR tolerance is not
To scale the maximum inductor DCR to the desired sense
resistor value, use the divider ratio:
RSENSE(EQUIV)
RD =
DCRMAX at TL(MAX)
C1 is usually selected to be in the range of 0.1μF to 0.47μF.
ThisforcesR1||R2toaround2k, reducingerrorthatmight
+
have been caused by the SENSE pin’s 1μA current.
3788fa
16
LTC3788
APPLICATIONS INFORMATION
The equivalent resistance R1|| R2 is scaled to the room
temperature inductance and maximum DCR:
The inductor value has a direct effect on ripple current.
The inductor ripple current ΔI decreases with higher
L
inductance or frequency and increases with higher V :
L
R1||R2 =
IN
(DCR at 20°C) • C1
⎛
⎞
V
f •L
V
IN
VOUT
IN
ΔIL =
1−
⎜
⎟
⎝
⎠
The sense resistor values are:
Accepting larger values of ΔI allows the use of low
R1•RD
1− RD
R1||R2
RD
L
R1=
; R2 =
inductances, but results in higher output voltage ripple
and greater core losses. A reasonable starting point for
setting ripple current is ΔI = 0.3(I
). The maximum
MAX
L
The maximum power loss in R1 is related to duty cycle,
and will occur in continuous mode at V = 1/2 V
ΔI occurs at V = 1/2 V .
L
IN
OUT
:
OUT
IN
The inductor value also has secondary effects. The tran-
sition to Burst Mode operation begins when the average
inductor current required results in a peak current below
(VOUT − V ) • V
IN
IN
PLOSS R1=
R1
10% of the current limit determined by R
. Lower
Ensure that R1 has a power rating higher than this value.
If high efficiency is necessary at light loads, consider this
power loss when deciding whether to use DCR sensing or
sense resistors. Light load power loss can be modestly
higher with a DCR network than with a sense resistor, due
totheextraswitchinglossesincurredthroughR1.However,
DCR sensing eliminates a sense resistor, reduces conduc-
tion losses and provides higher efficiency at heavy loads.
Peak efficiency is about the same with either method.
SENSE
inductor values (higher ΔI ) will cause this to occur at
L
lower load currents, which can cause a dip in efficiency in
the upper range of low current operation. In Burst Mode
operation, lower inductance values will cause the burst
frequency to decrease.
Inductor Core Selection
Once the value for L is known, the type of inductor must
be selected. High efficiency converters generally cannot
affordthecorelossfoundinlowcostpowderedironcores,
forcingtheuseofmoreexpensiveferriteormolypermalloy
cores. Actual core loss is independent of core size for a
fixedinductorvalue,butitisverydependentoninductance
selected. As inductance increases, core losses go down.
Unfortunately, because increased inductance requires
more turns of wire, copper losses will increase.
Inductor Value Calculation
The operating frequency and inductor selection are inter-
relatedinthathigheroperatingfrequenciesallowtheuseof
smaller inductor and capacitor values. Why would anyone
ever choose to operate at lower frequencies with larger
components?Theanswerisefficiency.Ahigherfrequency
generally results in lower efficiency because of MOSFET
gate charge and switching losses. In addition to this basic
trade-off, the effect of inductor value on ripple current and
low current operation must also be considered.
Ferrite core inductors have very low core loss and are
preferred at high switching frequencies, so design goals
can concentrate on copper loss and preventing satura-
tion. Ferrite core material saturates “hard,” which means
that inductance collapses abruptly when the peak design
current is exceeded. This results in an abrupt increase in
inductor ripple current and consequent output voltage
ripple. Do not allow the core to saturate!
3788fa
17
LTC3788
APPLICATIONS INFORMATION
Power MOSFET Selection
The MOSFET power dissipations at maximum output
current are given by:
Two external power MOSFETs must be selected for each
controller in the LTC3788: one N-channel MOSFET for the
bottom (main) switch, and one N-channel MOSFET for the
top (synchronous) switch.
(VOUT − V )VOUT
IN
PMAIN
=
•IOUT(MAX)2 • 1+ δ
(
)
V2
IN
IOUT(MAX)
• RDS(ON) + k • V3
•
•RDR
The peak-to-peak gate drive levels are set by the INTV
CC
OUT
V
voltage. This voltage is typically 5.4V during start-up
IN
(see EXTV pin connection). Consequently, logic-level
• CMILLER • f
CC
threshold MOSFETs must be used in most applications.
V
VOUT
The only exception is if low input voltage is expected (V
IN
GS(TH)
IN
PSYNC
=
•IOUT(MAX)2 • 1+ δ •R
(
)
DS(ON)
< 5V); then, sub-logic level threshold MOSFETs (V
< 3V) should be used. Pay close attention to the BV
DSS
where δ is the temperature dependency of R
DR
and
DS(ON)
specification for the MOSFETs as well; many of the logic
level MOSFETs are limited to 30V or less.
R
(approximately 1Ω) is the effective driver resistance
at the MOSFET’s Miller threshold voltage. The constant k,
which accounts for the loss caused by reverse recovery
current, is inversely proportional to the gate drive current
and has an empirical value of 1.7.
Selection criteria for the power MOSFETs include the
on-resistance R , Miller capacitance C
DS(ON)
, input
MILLER
voltage and maximum output current. Miller capacitance,
, can be approximated from the gate charge curve
C
MILLER
2
BothMOSFETshaveI RlosseswhilethebottomN-channel
usually provided on the MOSFET manufacturer’s data
sheet. C is equal to the increase in gate charge
equation includes an additional term for transition losses,
MILLER
which are highest at low input voltages. For high V the
IN
along the horizontal axis while the curve is approximately
high current efficiency generally improves with larger
flat divided by the specified change in V . This result is
DS
MOSFETs, while for low V the transition losses rapidly
IN
then multiplied by the ratio of the application applied V
DS
increasetothepointthattheuseofahigherR
device
DS(ON)
to the gate charge curve specified V . When the IC is
DS
with lower C
actually provides higher efficiency.
MILLER
operating in continuous mode, the duty cycles for the top
The synchronous MOSFET losses are greatest at high
input voltage when the bottom switch duty factor is low
or during overvoltage when the synchronous switch is on
close to 100% of the period.
and bottom MOSFETs are given by:
VOUT − V
IN
Main SwitchDuty Cycle =
VOUT
The term (1+ δ) is generally given for a MOSFET in the
V
VOUT
IN
Synchronous SwitchDuty Cycle =
form of a normalized R
vs Temperature curve, but
DS(ON)
δ = 0.005/°C can be used as an approximation for low
voltage MOSFETs.
3788fa
18
LTC3788
APPLICATIONS INFORMATION
C and C
Selection
of-phase. This effectively interleaves the output capacitor
currentpulses,greatlyreducingtheoutputcapacitorripple
current. As a result, the ESR requirement of the capacitor
can be relaxed. Because the ripple current in the output
capacitorisasquarewave,theripplecurrentrequirements
fortheoutputcapacitordependonthedutycycle,thenum-
ber of phases and the maximum output current. Figure 3
illustrates the normalized output capacitor ripple current
as a function of duty cycle in a 2-phase configuration. To
choose a ripple current rating for the output capacitor,
first establish the duty cycle range based on the output
voltage and range of input voltage. Referring to Figure 3,
choose the worst-case high normalized ripple current as
a percentage of the maximum load current.
IN
OUT
The input ripple current in a boost converter is relatively
low(comparedwiththeoutputripplecurrent),becausethis
currentiscontinuous.TheinputcapacitorC voltagerating
IN
should comfortably exceed the maximum input voltage.
Although ceramic capacitors can be relatively tolerant of
overvoltage conditions, aluminum electrolytic capacitors
are not. Be sure to characterize the input voltage for any
possible overvoltage transients that could apply excess
stress to the input capacitors.
The value of the C is a function of the source impedance,
IN
andingeneral,thehigherthesourceimpedance,thehigher
the required input capacitance. The required amount of
inputcapacitanceisalsogreatlyaffectedbythedutycycle.
High output current applications that also experience high
duty cycles can place great demands on the input supply,
both in terms of DC current and ripple current.
3.25
3.00
2.75
2.50
2.25
2.00
1.75
Inaboostconverter,theoutputhasadiscontinuouscurrent,
so C
must be capable of reducing the output voltage
OUT
1.50
1.25
1.00
0.75
0.50
0.25
0
1-PHASE
ripple.TheeffectsofESR(equivalentseriesresistance)and
the bulk capacitance must be considered when choosing
the right capacitor for a given output ripple voltage. The
steady ripple voltage due to charging and discharging the
bulk capacitance is given by:
2-PHASE
0.4 0.5
DUTY CYCLE OR (1-V /V
0.1 0.2 0.3
0.6 0.7 0.8 0.9
I
OUT(MAX) •(VOUT − V
)
)
IN OUT
IN(MIN)
3788 F03
VRIPPLE
=
V
COUT • VOUT • f
is the output filter capacitor.
Figure 3. Normalized Output Capacitor Ripple
Current (RMS) for a Boost Converter
where C
OUT
The steady ripple due to the voltage drop across the ESR
is given by:
Multiple capacitors placed in parallel may be needed to
meet the ESR and RMS current handling requirements.
Dry tantalum, special polymer, aluminum electrolytic and
ceramic capacitors are all available in surface mount
packages. Ceramic capacitors have excellent low ESR
characteristics but can have a high voltage coefficient.
Capacitors are now available with low ESR and high ripple
current ratings (i.e., OS-CON and POSCAP).
ΔV
= I
• ESR
ESR
L(MAX)
The LTC3788 can also be configured as a 2-phase single
output converter where the outputs of the two channels
are connected together and both channels have the same
duty cycle. With 2-phase operation, the two channels of
thedualswitchingregulatorareoperated180degreesout-
3788fa
19
LTC3788
APPLICATIONS INFORMATION
Setting Output Voltage
INTV Regulators
CC
The LTC3788 features two separate internal P-channel
low dropout linear regulators (LDO) that supply power at
The LTC3788 output voltages are each set by an external
feedback resistor divider carefully placed across the out-
put, as shown in Figure 4. The regulated output voltage
is determined by:
the INTV pin from either the VBIAS supply pin or the
CC
EXTV pin depending on the connection of the EXTV
CC
CC
pin. INTV powers the gate drivers and much of the
⎛
⎞
⎟
RB
CC
VOUT = 1.2V 1+
LTC3788’s internal circuitry. The VBIAS LDO and the
⎜
⎝
RA
⎠
EXTV LDO regulate INTV to 5.4V. Each of these can
CC
CC
supply a peak current of 50mA and must be bypassed to
ground with a minimum of 4.7μF ceramic capacitor. Good
bypassing is needed to supply the high transient currents
required by the MOSFET gate drivers and to prevent in-
teraction between the channels.
Great care should be taken to route the V line away from
FB
noise sources, such as the inductor or the SW line.
Soft-Start (SS Pins)
The start-up of each V
is controlled by the voltage
OUT
High input voltage applications in which large MOSFETs
are being driven at high frequencies may cause the maxi-
mum junction temperature rating for the LTC3788 to be
on the respective SS pins. When the voltage on the SS
pin is less than the internal 1.2V reference, the LTC3788
regulates the VFB pin voltage to the voltage on the SS pin
instead of 1.2V.
exceeded. The INTV current, which is dominated by the
CC
gate charge current, may be supplied by either the VBIAS
Soft-startisenabledbysimplyconnectingacapacitorfrom
the SS pin to ground, as shown in Figure 5. An internal
10μA current source charges the capacitor, providing a
linear ramping voltage at the SS pin. The LTC3788 will
LDO or the EXTV LDO. When the voltage on the EXTV
CC
CC
pin is less than 4.8V, the VBIAS LDO is enabled. In this
case, power dissipation for the IC is highest and is equal
to V • I
. The gate charge current is dependent
INTVCC
IN
regulate the VFB pin (and hence, V ) according to the
OUT
on operating frequency, as discussed in the Efficiency
Considerations section. The junction temperature can
be estimated by using the equations given in Note 3 of
the Electrical Characteristics. For example, the LTC3788
voltage on the SS pin, allowing V
to rise smoothly
OUT
from V to its final regulated value. The total soft-start
IN
time will be approximately:
1.2V
10µA
INTV current is limited to less than 40mA from a 40V
CC
tSS = CSS
•
supply when not using the EXTV supply:
CC
T = 70°C + (40mA)(40V)(34°C/W) = 125°C
J
V
OUT
R
LTC3788
SS
B
A
LTC3788
VFB
C
SS
R
SGND
3788 F05
3788 F04
Figure 4. Setting Output Voltage
Figure 5. Using the SS Pin to Program Soft-Start
3788fa
20
LTC3788
APPLICATIONS INFORMATION
To prevent the maximum junction temperature from being
exceeded, the input supply current must be checked while
operating in continuous conduction mode (PLLIN/MODE
When one of the topside MOSFETs is to be turned on, the
driver places the C voltage across the gate-source of the
B
desired MOSFET. This enhances the MOSFET and turns on
the topside switch. The switch node voltage, SW, rises to
= INTV ) at maximum V .
CC
IN
V and the BOOST pin follows. With the topside MOSFET
IN
When the voltage applied to EXTV rises above 4.8V, the
CC
on, the boost voltage is above the input supply: V
=
BOOST
V LDO is turned off and the EXTV LDO is enabled. The
IN
CC
V + V
. The value of the boost capacitor C needs
IN
INTVCC
B
EXTV LDO remains on as long as the voltage applied to
CC
to be 100 times that of the total input capacitance of the
EXTV remains above 4.55V. The EXTV LDO attempts
CC
CC
topsideMOSFET(s).Thereversebreakdownoftheexternal
to regulate the INTV voltage to 5.4V, so while EXTV
CC
CC
CC
CC
Schottky diode must be greater than V
.
IN(MAX)
is less than 5.4V, the LDO is in dropout and the INTV
voltage is approximately equal to EXTV . When EXTV
CC
Fault Conditions: Overtemperature Protection
is greater than 5.4V, up to an absolute maximum of 6V,
At higher temperatures, or in cases where the internal
power dissipation causes excessive self heating on-chip
INTV is regulated to 5.4V.
CC
Significant thermal gains can be realized by powering
(such as an INTV short to ground), the overtemperature
CC
INTV from an external supply. Tying the EXTV pin
CC
CC
shutdown circuitry will shut down the LTC3788. When the
to a 5V supply reduces the junction temperature in the
junction temperature exceeds approximately 170°C, the
previous example from 125°C to 77°C:
overtemperaturecircuitrydisablestheINTV LDO,causing
CC
T = 70°C + (40mA)(5V)(34°C/W) = 77°C
J
the INTV supply to collapse and effectively shut down
CC
the entire LTC3788 chip. Once the junction temperature
If more current is required through the EXTV LDO than
CC
dropsbacktoapproximately155°C, theINTV LDOturns
CC
is specified, an external Schottky diode can be added
back on. Long term overstress (T > 125°C) should be
J
between the EXTV and INTV pins. Make sure that in
CC
CC
avoided as it can degrade the performance or shorten the
all cases EXTV ≤ VBIAS.
CC
life of the part.
The following list summarizes possible connections for
EXTV :
Phase-Locked Loop and Frequency Synchronization
CC
EXTV Left Open (or Grounded). This will cause
The LTC3788 has an internal phase-locked loop (PLL)
comprised of a phase frequency detector, a low pass filter
and a voltage-controlled oscillator (VCO). This allows the
turn-on of the top MOSFET of controller 1 to be locked to
the rising edge of an external clock signal applied to the
PLLIN/MODEpin.Theturn-onofcontroller2’stopMOSFET
is thus 180 degrees out-of-phase with the external clock.
The phase detector is an edge-sensitive digital type that
provides zero degrees phase shift between the external
and internal oscillators. This type of phase detector does
not exhibit false lock to harmonics of the external clock.
CC
INTV to be powered from the internal 5.4V regu-
CC
lator resulting in an efficiency penalty at high input
voltages.
EXTV Connected to an External Supply. If an exter-
CC
nal supply is available in the 5.4V to 6V range, it may
be used to power EXTV providing it is compatible
CC
with the MOSFET gate drive requirements. Ensure that
EXTV < VBIAS.
CC
Topside MOSFET Driver Supply (C , D )
B
B
If the external clock frequency is greater than the internal
External bootstrap capacitors C connected to the BOOST
B
oscillator’sfrequency,f ,thencurrentissourcedcontinu-
OSC
pinssupplythegatedrivevoltagesforthetopsideMOSFETs.
ously from the phase detector output, pulling up the VCO
Capacitor C in the Block Diagram is charged though
B
input. When the external clock frequency is less than f
,
OSC
external diode D from INTV when the SW pin is low.
B
CC
current is sunk continuously, pulling down the VCO input.
3788fa
21
LTC3788
APPLICATIONS INFORMATION
If the external and internal frequencies are the same but
exhibit a phase difference, the current sources turn on for
an amount of time corresponding to the phase difference.
The voltage at the VCO input is adjusted until the phase
and frequency of the internal and external oscillators are
identical. At the stable operating point, the phase detector
output is high impedance and the internal filter capacitor,
Minimum On-Time Considerations
Minimum on-time, t , is the smallest time duration
that the LTC3788 is capable of turning on the bottom
MOSFET. It is determined by internal timing delays and
the gate charge required to turn on the top MOSFET. Low
duty cycle applications may approach this minimum on-
time limit.
ON(MIN)
C , holds the voltage at the VCO input.
LP
In forced continuous mode, if the duty cycle falls below
what can be accommodated by the minimum on-time,
the controller will begin to skip cycles but the output will
continuetoberegulated.Morecycleswillbeskippedwhen
Typically, the external clock (on PLLIN/MODE pin) input
high threshold is 1.6V, while the input low threshold is
1.2V.
Note that the LTC3788 can only be synchronized to an
external clock whose frequency is within range of the
LTC3788’sinternalVCO,whichisnominally55kHzto1MHz.
This is guaranteed to be between 75kHz and 850kHz.
V increases. Once V rises above V , the loop works
IN IN OUT
to keep the top MOSFET on continuously. The minimum
on-time for the LTC3788 is approximately 110ns.
Efficiency Considerations
RapidphaselockingcanbeachievedbyusingtheFREQpin
to set a free-running frequency near the desired synchro-
nization frequency. The VCO’s input voltage is prebiased
at a frequency corresponding to the frequency set by the
FREQ pin. Once prebiased, the PLL only needs to adjust
the frequency slightly to achieve phase lock and synchro-
nization. Although it is not required that the free-running
frequency be near external clock frequency, doing so will
prevent the operating frequency from passing through a
large range of frequencies as the PLL locks.
The percent efficiency of a switching regulator is equal to
the output power divided by the input power times 100%.
It is often useful to analyze individual losses to determine
what is limiting the efficiency and which change would
produce the greatest improvement. Percent efficiency
can be expressed as:
%Efficiency = 100% – (L1 + L2 + L3 + ...)
where L1, L2, etc., are the individual losses as a percent-
age of input power.
Table 2 summarizes the different states in which the FREQ
pin can be used.
Table 2.
1000
900
800
700
600
500
400
300
200
100
FREQ PIN
PLLIN/MODE PIN
DC Voltage
FREQUENCY
350kHz
0V
INTV
DC Voltage
535kHz
CC
Resistor
DC Voltage
50kHz to 900kHz
Any of the Above
External Clock
Phase Locked to
External Clock
0
15 25 35 45 55 65 75 85 95 105 115 125
FREQ PIN RESISTOR (kΩ)
3788 F06
Figure 6. Relationship Between Oscillator
Frequency and Resistor Value at the FREQ Pin
3788fa
22
LTC3788
APPLICATIONS INFORMATION
Although all dissipative elements in the circuit produce
losses, four main sources usually account for most of the
forces the regulator to adapt to the current change and
return V
to its steady-state value. During this recov-
OUT
losses in LTC3788 circuits: 1) IC V current, 2) INTV
ery time V
can be monitored for excessive overshoot
IN
CC
OUT
2
regulator current, 3) I R losses, 4) Bottom MOSFET
or ringing, which would indicate a stability problem.
OPTI-LOOP compensation allows the transient response
to be optimized over a wide range of output capacitance
and ESR values. The availability of the ITH pin not only
allows optimization of control loop behavior, but it also
provides a DC coupled and AC filtered closed loop re-
sponse test point. The DC step, rise time and settling at
this test point truly reflects the closed loop response.
Assuming a predominantly second order system, phase
margin and/or damping factor can be estimated using the
percentage of overshoot seen at this pin. The bandwidth
can also be estimated by examining the rise time at the
transition losses.
1. The V current is the DC supply current given in the
IN
ElectricalCharacteristicstable,whichexcludesMOSFET
driver and control currents. V current typically results
IN
in a small (<0.1%) loss.
2. INTV current is the sum of the MOSFET driver and
CC
controlcurrents.TheMOSFETdrivercurrentresultsfrom
switching the gate capacitance of the power MOSFETs.
Each time a MOSFET gate is switched from low to
high to low again, a packet of charge, dQ, moves from
INTV to ground. The resulting dQ/dt is a current out
pin. The I external components shown in the Figure 9
CC
TH
of INTV that is typically much larger than the control
circuit will provide an adequate starting point for most
CC
circuit current. In continuous mode, I
= f(Q +
applications.
GATECHG
T
Q ),whereQ andQ arethegatechargesofthetopside
B
T
B
The I series RC-CC filter sets the dominant pole-zero
TH
and bottom side MOSFETs.
loop compensation. The values can be modified slightly
(from 0.5 to 2 times their suggested values) to optimize
transient response once the final PC layout is complete
and the particular output capacitor type and value have
been determined. The output capacitors must be selected
because the various types and values determine the loop
gain and phase. An output current pulse of 20% to 80%
of full-load current having a rise time of 1μs to 10μs will
produce output voltage and ITH pin waveforms that will
give a sense of the overall loop stability without breaking
the feedback loop.
2
3. DC I R losses. These arise from the resistances of
the MOSFETs, sensing resistor, inductor and PC board
traces and cause the efficiency to drop at high output
currents.
4. Transition losses apply only to the bottom MOSFET(s),
andbecomesignificantonlywhenoperatingatlowinput
voltages. Transition losses can be estimated from:
3
VOUT
Transition Loss = (1.7)
IO(MAX) • CRSS f
V
IN
Placing a power MOSFET and load resistor directly
across the output capacitor and driving the gate with an
appropriatesignalgeneratorisapracticalwaytoproduce
a realistic load step condition. The initial output voltage
stepresultingfromthestepchangeinoutputcurrentmay
not be within the bandwidth of the feedback loop, so this
signal cannot be used to determine phase margin. This
is why it is better to look at the ITH pin signal which is
in the feedback loop and is the filtered and compensated
control loop response.
Other hidden losses, such as copper trace and internal
battery resistances, can account for an additional 5% to
10% efficiency degradation in portable systems. It is very
important to include these system-level losses during the
design phase.
Checking Transient Response
The regulator loop response can be checked by looking at
the load current transient response. Switching regulators
take several cycles to respond to a step in DC (resistive)
load current. When a load step occurs, V
shifts by an
OUT
The gain of the loop will be increased by increasing R
C
amount equal to ΔI
(ESR), where ESR is the effective
LOAD
and the bandwidth of the loop will be increased by de-
series resistance of C . ΔI
also begins to charge
OUT
LOAD
creasing C . If R is increased by the same factor that C
C
C
C
ordischargeC generatingthefeedbackerrorsignalthat
OUT
3788fa
23
LTC3788
APPLICATIONS INFORMATION
is decreased, the zero frequency will be kept the same,
thereby keeping the phase shift the same in the most
critical frequency range of the feedback loop. The output
voltage settling behavior is related to the stability of the
closed-loopsystemandwilldemonstratetheactualoverall
supply performance.
The power dissipation on the top side MOSFET can
be easily estimated. Choosing a Vishay Si7848BDP
MOSFET results in: R
= 0.012Ω, C
= 150pF.
DS(ON)
MILLER
At maximum input voltage with T(estimated) = 50°C:
(24V − 12V) 24V
PMAIN
=
•(4A)2
(12V)2
A second, more severe transient is caused by switching
in loads with large (>1μF) supply bypass capacitors. The
dischargedbypasscapacitorsareeffectivelyputinparallel
⎡
⎤
• 1+ (0.005)(50°C − 25°C) • 0.008Ω
⎣
⎦
4A
12V
+ (1.7)(24V)3
(150pF)(350kHz) = 0.7W
with C , causing a rapid drop in V . No regulator can
OUT
OUT
C
OUT
is chosen to filter the square current in the output.
The maximum output current peak is:
alter its delivery of current quickly enough to prevent this
sudden step change in output voltage if the load switch
resistance is low and it is driven quickly. If the ratio of
31%
2
⎛
⎞
IOUT(PEAK) = 4 • 1+
= 4.62A
C
to C
is greater than 1:50, the switch rise time
⎜
⎟
⎠
LOAD
OUT
⎝
should be controlled so that the load rise time is limited to
approximately 25 • C . Thus, a 10μF capacitor would
A low ESR (5mꢁ) capacitor is suggested. This capacitor
will limit output voltage ripple to 23.1mV (assuming ESR
dominate ripple).
LOAD
require a 250μs rise time, limiting the charging current
to about 200mA.
Design Example
PC Board Layout Checklist
As a design example for one channel, assume V
=
=
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of
the IC. These items are also illustrated graphically in the
layout diagram of Figure 7. Figure 8 illustrates the current
waveforms present in the various branches of the 2-phase
synchronousregulatorsoperatinginthecontinuousmode.
Check the following in your layout:
IN
12V(nominal), V = 22V (max), V
= 24V, I
IN
OUT
OUT(MAX)
4A, V
= 75mV, and f = 350kHz.
SENSE(MAX)
Theinductancevalueischosenfirstbasedona30%ripple
current assumption. The highest value of ripple current
occurs at the maximum input voltage. Tie the PLLLPF
pin to GND, generating 350kHz operation. The minimum
inductance for 30% ripple current is:
1.PutthebottomN-channelMOSFETsMBOT1andMBOT2
and the top N-channel MOSFETs MTOP1 and MTOP2
⎛
⎞
V
f •L
V
IN
VOUT
IN
in one compact area with C
.
OUT
ΔIL =
1−
⎜
⎟
⎝
⎠
2. Are the signal and power grounds kept separate? The
combinedICsignalgroundpinandthegroundreturnof
A 6.8μH inductor will produce a 31% ripple current. The
peak inductor current will be the maximum DC value plus
one half the ripple current, or 9.25A.
C
mustreturntothecombinedC (–)terminals.
INTVCC
OUT
The path formed by the bottom N-channel MOSFET and
the C capacitor should have short leads and PC trace
IN
The R
resistor value can be calculated by using the
SENSE
lengths. The output capacitor (–) terminals should be
connected as close as possible to the (–) terminals of
the input capacitor by placing the capacitors next to
each other.
maximum current sense voltage specification with some
accommodation for tolerances:
75mV
9.25A
RSENSE
≤
= 0.008Ω
Choosing 1% resistors: R = 5k and R = 95.3k yields an
A
B
output voltage of 24.072V.
3788fa
24
LTC3788
APPLICATIONS INFORMATION
3. Do the LTC3788 VFB pins’ resistive dividers connect to
drops below the low current operation threshold— typi-
cally 10% of the maximum designed current level in Burst
Mode operation.
the (+) terminals of C ? The resistive divider must be
OUT
connected between the (+) terminal of C
and signal
OUT
ground and placed close to the VFB pin. The feedback
resistor connections should not be along the high cur-
rent input feeds from the input capacitor(s).
Thedutycyclepercentageshouldbemaintainedfromcycle
tocycleinawelldesigned, lownoisePCBimplementation.
Variation in the duty cycle at a subharmonic rate can sug-
gest noise pickup at the current or voltage sensing inputs
or inadequate loop compensation. Overcompensation of
the loop can be used to tame a poor PC layout if regulator
bandwidth optimization is not required. Only after each
controllerischeckedforitsindividualperformanceshould
both controllers be turned on at the same time. A particu-
larly difficult region of operation is when one controller
channel is nearing its current comparator trip point while
the other channel is turning on its bottom MOSFET. This
occurs around the 50% duty cycle on either channel due
to the phasing of the internal clocks and may cause minor
duty cycle jitter.
–
+
4. Are the SENSE and SENSE leads routed together with
minimumPCtracespacing?Thefiltercapacitorbetween
+
–
SENSE and SENSE should be as close as possible
to the IC. Ensure accurate current sensing with Kelvin
connections at the sense resistor.
5. Is the INTV decoupling capacitor connected close
CC
to the IC, between the INTV and the power ground
CC
pins? This capacitor carries the MOSFET drivers’ cur-
rent peaks. An additional 1μF ceramic capacitor placed
immediatelynexttotheINTV andPGNDpinscanhelp
CC
improve noise performance substantially.
6. Keep the switching nodes (SW1, SW2), top gate nodes
(TG1, TG2) and boost nodes (BOOST1, BOOST2) away
from sensitive small-signal nodes, especially from
the opposites channel’s voltage and current sensing
feedback pins. All of these nodes have very large and
fast moving signals and, therefore, should be kept on
the output side of the LTC3788 and occupy a minimal
PC trace area.
Reduce V from its nominal level to verify operation with
IN
high duty cycle. Check the operation of the undervoltage
lockout circuit by further lowering V while monitoring
IN
the outputs to verify operation.
Investigatewhetheranyproblemsexistonlyathigherout-
put currents or only at higher input voltages. If problems
coincide with high input voltages and low output currents,
look for capacitive coupling between the BOOST, SW, TG,
and possibly BG connections and the sensitive voltage
and current pins. The capacitor placed across the current
sensing pins needs to be placed immediately adjacent to
the pins of the IC. This capacitor helps to minimize the
effects of differential noise injection due to high frequency
capacitive coupling.
7. Use a modified “star ground” technique: a low imped-
ance, large copper area central grounding point on
the same side of the PC board as the input and output
capacitors with tie-ins for the bottom of the INTV
CC
decouplingcapacitor,thebottomofthevoltagefeedback
resistive divider and the SGND pin of the IC.
PC Board Layout Debugging
An embarrassing problem, which can be missed in an
otherwise properly working switching regulator results
when the current sensing leads are hooked up backwards.
The output voltage under this improper hook-up will still
bemaintained,buttheadvantagesofcurrentmodecontrol
will not be realized. Compensation of the voltage loop will
be much more sensitive to component selection. This
behavior can be investigated by temporarily shorting out
the current sensing resistor—don’t worry, the regulator
will still maintain control of the output voltage.
Start with one controller on at a time. It is helpful to use
a DC-50MHz current probe to monitor the current in the
inductor while testing the circuit. Monitor the output
switching node (SW pin) to synchronize the oscilloscope
to the internal oscillator and probe the actual output volt-
age. Check for proper performance over the operating
voltage and current range expected in the application. The
frequencyofoperationshouldbemaintainedovertheinput
voltage range down to dropout and until the output load
3788fa
25
LTC3788
APPLICATIONS INFORMATION
–
SENSE1
ILIM
PGOOD1
+
V
SENSE1
SS1
PULL-UP
R
L1
SENSE1
SW1
TG1
LTC3788
C
B1
BOOST1
BG1
V
V
OUT1
M1
+
ITH1
M2
VBIAS
PGND
EXTV
CC
INTV
CC
VFB1
FREQ
PHSMD
CLKOUT
PLLIN/MODE
SGND
GND
IN
f
IN
RUN1
RUN2
BG2
M3
+
C
B2
M4
VFB2
V
BOOST2
OUT2
R
L2
SENSE2
ITH2
TG2
SW2
SS2
SENSE2
SENSE2
PGOOD2
V
PULL-UP
+
–
3788 F07
Figure 7. Recommended Printed Circuit Layout Diagram
3788fa
26
LTC3788
APPLICATIONS INFORMATION
L1
R
SENSE1
V
OUT1
C
OUT1
R
L1
SW1
V
IN
R
IN
C
IN
L2
R
SENSE2
V
OUT2
C
OUT2
R
L2
SW2
BOLD LINES INDICATE
HIGH SWITCHING
CURRENT. KEEP LINES
TO A MINIMUM LENGTH.
3788 F08
Figure 8. Branch Current Waveforms
3788fa
27
LTC3788
TYPICAL APPLICATIONS
–
+
R
B1
+
PGOOD2
PGOOD1
TG1
SENSE1
SENSE1
100k
C
OUTA1
C
OUTB1
232k
INTV
R
CC
22μF
A1
220μF
12.1k
s4
L1
3.3μH
MTOP1
MBOT1
R
SENSE1
4mꢁ
VFB1
LTC3788
C
SW1
ITH1
C
B1
220pF
0.1μF
BOOST1
BG1
C
ITH1
R
8.66k
ITH1
15nF
ITH1
SS1
C
SS1
VBIAS
V
0.1μF
IN
V
OUT
5V TO 24V
INTV
CC
C
24V, 10A*
INT
+
4.7μF
C
C
INA
INB
220μF
SS2
ITH2
VFB2
PGND
BG2
22μF
s4
ILIM
PHSMD
CLKOUT
PLLIN/MODE
SGND
MBOT2
MTOP2
C
B1
0.1μF
L2
3.3μH
R
BOOST2
SW2
SENSE2
4mꢁ
EXTV
CC
RUN1
RUN2
FREQ
TG2
+
C
OUTA2
C
OUTB2
220μF
+
–
22μF
SENSE2
SENSE2
s4
3788 F09
CINA, COUTA1, COUTA2: SANYO, 50CE220AX
CINB, COUTB1, COUTB2: TDK C4532X5R1E226M
L1, L2: PULSE PA1494.362NL
MBOT1, MBOT2, MTOP1, MTOP2: RENESAS HAT2169H
*WHEN V < 8V, MAXIMUM LOAD CURRENT AVAILABLE IS REDUCED.
IN
Figure 9. High Efficiency 2-Phase 24V Boost Converter
3788fa
28
LTC3788
APPLICATIONS INFORMATION
R
53.6k, 1%
S1
R
S2
INTV
CC
26.1k, 1%
100k
100k
–
SENSE1
SENSE1
PGOOD2
PGOOD1
V
R
232k
1%
OUT1
B1
C1
0.1μF
24V, 4A
+
+
C
C
OUTB1
220μF
OUTA1
C3
0.1μF
6.8μF
R
A1
LTC3788
s 4
D3
12.1k, 1%
L1
10.2μH
MTOP1
MBOT1
VFB1
ITH1
TG1
C
, 220pF
ITH1
SW1
BOOST1
R
ITH1
C
, 15nF
ITH1
C
, 0.1μF
8.87k, 1%
B1
BG1
D1
C
, 0.01μF
SS1
V
IN
VBIAS
SS1
ILIM
PHSMD
CLKOUT
PLLIN/MODE
SGND
5V TO 24V
C
INB
+
INTV
CC
C
INA
C
INT
22μF
220μF
4.7μF
s 4
PGND
INTV
CC
D2
, 0.1μF
MBOT2B
MBOT2A
EXTV
BG2
CC
C
B1
RUN1
RUN2
FREQ
R
FREQ
BOOST2
41.2k
L2
16μH
C
, 0.1μF
SS2
SW2
TG2
SS2
R
C
, 4.7nF
ITH2
ITH2
D4
23.7k, 1%
MTOP2
ITH2
C
ITH2A
220pF
V
OUT2
R
A2
48V, 2A
C
OUTB2
12.1k, 1%
+
C
VFB2
OUTA2
22μF
220μF
R
475k
1%
B2
C4
s 4
0.1μF
+
–
SENSE2
C2
0.1μF
R
S4
30.1k, 1%
SENSE2
R
42.2k, 1%
S3
3788 F10
C
C
C
C
: C4532x7R1H685K
: SANYO 63CE220KX
MBOT1, MTOP1: RENESAS RJK0305
OUTA2
OUTB2
MBOT2A, MBOT2B, MTOP2: RENESAS RJK0652
D3: DIODES INC B340B
, C
: TDK C4532X5R1E226M
: SANYO 50CE220AX
INA OUTA1
INB OUTB1
, C
D4: DIODES INC B360A
L1: PULSE PA2050.103NL
L2: PULSE PA2050.163NL
Figure ±0. High Efficiency Dual 24V/48V Boost Converter with Inductor DCR Current Sensing
3788fa
29
LTC3788
PACKAGE DESCRIPTION
UH Package
32-Lead Plastic QFN (5mm × 5mm)
(Reference LTC DWG # 05-08-1693 Rev D)
0.70 p0.05
5.50 p0.05
4.10 p0.05
3.45 p 0.05
3.50 REF
(4 SIDES)
3.45 p 0.05
PACKAGE OUTLINE
0.25 p 0.05
0.50 BSC
RECOMMENDED SOLDER PAD LAYOUT
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
BOTTOM VIEW—EXPOSED PAD
PIN 1 NOTCH R = 0.30 TYP
OR 0.35 s 45° CHAMFER
R = 0.05
TYP
0.00 – 0.05
R = 0.115
TYP
0.75 p 0.05
5.00 p 0.10
(4 SIDES)
31 32
0.40 p 0.10
PIN 1
TOP MARK
(NOTE 6)
1
2
3.45 p 0.10
3.50 REF
(4-SIDES)
3.45 p 0.10
(UH32) QFN 0406 REV D
0.200 REF
0.25 p 0.05
0.50 BSC
NOTE:
1. DRAWING PROPOSED TO BE A JEDEC PACKAGE OUTLINE
M0-220 VARIATION WHHD-(X) (TO BE APPROVED)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
3788fa
30
LTC3788
REVISION HISTORY
REV
DATE
DESCRIPTION
PAGE NUMBER
A
04/10 Updates to Typical Application
Updates in the Electrical Characteristics Section
Updates to PLLIN/MODE in Pin Functions
Updates to Application Information
New Figure 9 Added
1
3, 4
9
21, 24
28
Updated Note on Typical Application
Updated Related Parts Table
32
32
3788fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
31
LTC3788
TYPICAL APPLICATION
High Efficiency Dual ±2V/24V Boost Converter
INTV
CC
100k
100k
–
+
SENSE1
PGOOD2
PGOOD1
V
OUT1
R
B1
24V, 5A
C
OUTB1
232k
+
+
SENSE1
C
OUTA1
22μF
220μF
R
A1
LTC3788
s 4
12.1k
L1
R
SENSE1
4mΩ
MTOP1
MBOT1
VFB1
ITH1
TG1
3.3μH
C
, 220pF
ITH1
SW1
BOOST1
R
ITH1
8.66k
C
, 15nF
ITH1
C
, 0.1μF
B1
BG1
D1
C
SS1
, 0.1μF
V
IN
VBIAS
SS1
ILIM
5V TO 24V
C
INB
INTV
CC
C
INA
C
INT
PHSMD
CLKOUT
PLLIN/MODE
SGND
22μF
220μF
4.7μF
s 4
PGND
D2
, 0.1μF
MBOT2
MTOP2
EXTV
BG2
CC
C
B1
RUN1
RUN2
FREQ
BOOST2
L2
1.25μH
R
SENSE2
3mΩ
C
SS2
, 0.1μF
SW2
TG2
SS2
R
C
ITH2
, 15nF
ITH2
2.7k
ITH2
C
, 100pF
ITHA2
V
OUT2
R
A2
12V, 10A*
C
OUTB2
12.1k
+
C
VFB2
SENSE2
SENSE2
OUTA2
+
–
22μF
220μF
R
s 4
B2
110k
C
C
, C
, C
: SANYO, 50CE220AX
INA OUTA1 OUTA2
, C
, C
: TDK C4532X5R1E226M
INB OUTB1 OUTB2
L1: PULSE PA1494.362NL
3788 TA02
L2: PULSE PA1294.132NL
MBOT1, MBOT2, MTOP1, MTOP2: RENESAS HAT2169H
* WHEN V = 8V, MAXIMUM LOAD CURRENT AVAILABLE IS REDUCED. V
FOLLOWS V WHEN V > 12V.
IN
OUT2
IN
IN
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC3862/LTC3862-1 Multiphase Current Mode Step-Up DC/DC Controller
4V ≤ V ≤ 36V, 5V or 10V Gate Drive, 75kHz to 500kHz,
IN
SSOP-24, TSSOP-24, 5mm × 5mm QFN-24
LTC3813/LTC3814-5 100V/60V Maximum V
Current Mode Synchronous No R
™, Large 1ꢁ Gate Driver, Adjustable Off-Time,
OUT
SENSE
Step-Up DC/DC Controller
SSOP-28, TSSOP-16
LTC1871/LTC1871-1/ Wide Input Range, No R
Low Quiescent Current
Adjustable Switching Frequency, 2.5V ≤ V ≤ 36V,
SENSE
IN
LTC1871-7
Flyback, Boost and SEPIC Controller
Burst Mode® Operation at Light Load. MSOP-10
LT3757/LT3758
Boost, Flyback, SEPIC and Inverting Controller
V Up to 40V/100V, 100kHz to 1MHz Programmable Operation
IN
Frequency, 3mm × 3mm DFN-10 and MSOP-10E
LTC3780
High Efficiency Synchronous 4-Switch Buck-Boost
DC/DC Controller
4V ≤ V ≤ 36V, 0.8V ≤ V ≤ 30V, SSOP-24, 5mm × 5mm QFN-32
IN
OUT
3788fa
LT 0410 REV A • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
32
●
●
© LINEAR TECHNOLOGY CORPORATION 2009
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
相关型号:
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LTC3788-1 - 2-Phase, Dual Output Synchronous Boost Controller; Package: SSOP; Pins: 28; Temperature Range: -40°C to 85°C
Linear
LTC3788IGN-1#TRPBF
LTC3788-1 - 2-Phase, Dual Output Synchronous Boost Controller; Package: SSOP; Pins: 28; Temperature Range: -40°C to 85°C
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