LTC3858IGN-1#TRPBF [Linear]
LTC3858-1 - Low IQ, Dual 2-Phase Synchronous Step-Down Controller; Package: SSOP; Pins: 28; Temperature Range: -40°C to 85°C;型号: | LTC3858IGN-1#TRPBF |
厂家: | Linear |
描述: | LTC3858-1 - Low IQ, Dual 2-Phase Synchronous Step-Down Controller; Package: SSOP; Pins: 28; Temperature Range: -40°C to 85°C 开关 光电二极管 |
文件: | 总38页 (文件大小:439K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC3858-1
Low I , Dual
Q
2-Phase Synchronous
Step-Down Controller
FEATURES
DESCRIPTION
The LTC®3858-1 is a high performance dual step-down
switching regulator controller that drives all N-channel
synchronouspowerMOSFETstages.Aconstantfrequency
current mode architecture allows a phase-lockable fre-
quency of up to 850kHz. Power loss and noise due to the
input capacitor ESR are minimized by operating the two
controller outputs out of phase.
n
Low Operating I : 170μA (One Channel On)
Q
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Wide Output Voltage Range: 0.8V ≤ V
≤ 24V
OUT
Wide V Range: 4V to 38V
IN
R
or DCR Current Sensing
SENSE
Out-of-Phase Controllers Reduce Required Input
Capacitance and Power Supply Induced Noise
OPTI-LOOP® Compensation Minimizes C
n
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OUT
Phase-Lockable Frequency (75kHz-850kHz)
Programmable Fixed Frequency (50kHz-900kHz)
Selectable Continuous, Pulse-Skipping or
Burst Mode® Operation at Light Loads
Very Low Dropout Operation: 99% Duty Cycle
Adjustable Output Voltage Soft-Start
The 170ꢀA no-load quiescent current extends operating
life in battery powered systems. OPTI-LOOP compensa-
tion allows the transient response to be optimized over
a wide range of output capacitance and ESR values. The
LTC3858-1featuresaprecision0.8Vreferenceandapower
goodoutputindicator. Awide4Vto38Vinputsupplyrange
encompasses a wide range of intermediate bus voltages
and battery chemistries.
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Power Good Output Voltage Monitor
Output Overvoltage Protection
Output Latchoff Protection During Short Circuit
Independent soft-start pins for each controller ramp the
outputvoltagesduringstart-up.Theoutput Latchofffeature
protects the circuit in short-circuit conditions.
Low Shutdown I : 8μA
Q
Internal LDO Powers Gate Drive from V or EXTV
IN
CC
No Current Foldback During Start-Up
Tiny 4mm × 5mm QFN and Narrow SSOP Packages
For a leadless 32-pin QFN package with the additional fea-
tures of adjustable current limit, clock out, phase modula-
tionandtwoPGOODoutputs,seetheLTC3858datasheet.
L,LT,LTC,LTM,BurstMode,OPTI-LOOP,μModule,LinearTechnologyandtheLinearlogo
APPLICATIONS
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Automotive Systems
areregisteredtrademarksandNoR
andUltraFastaretrademarksofLinearTechnology
SENSE
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Battery Operated Digital Devices
Corporation.Allothertrademarksarethepropertyoftheirrespectiveowners.ProtectedbyU.S.
Patents,including5481178,5705919,5929620,6100678,6144194,6177787,6304066,6580258.
n
Distributed DC Power Systems
TYPICAL APPLICATION
High Efficiency Dual 8.5V/3.3V Step-Down Converter
V
Efficiency and Power Loss
IN
9V TO 38V
22μF
50V
vs Load Current
4.7μF
V
INTV
CC
100
90
10000
1000
100
10
IN
TG1
TG2
0.1μF
0.1μF
BOOST1
SW1
BOOST2
SW2
3.3μH
7.2μH
80
70
EFFICIENCY
BG1
BG2
60
50
LTC3858-1
PGND
POWER LOSS
= 12V
+
+
40
30
20
10
0
SENSE1
SENSE1
SENSE2
0.01Ω
193k
0.007Ω
–
1
–
V
8.5V
3.5A
SENSE2
OUT2
V
V
V
OUT1
3.3V
5A
IN
OUT
V
V
= 3.3V
FB1
FB2
I
TH2
62.5k
FIGURE 12 CIRCUIT
0.1 10
OUTPUT CURRENT (A)
I
TH1
SS1
0.1
150μF
680pF
15k
680pF
15k
150μF
SGND
SS2
0.0001 0.001
0.01
1
20k
20k
0.1μF
0.1μF
38581 TA01b
38581 TA01
38581fd
1
LTC3858-1
ABSOLUTE MAXIMUM RATINGS (Note 1)
EXTV ...................................................... –0.3V to 14V
Input Supply Voltage (V )......................... –0.3V to 40V
CC
IN
I
, I ,V , V Voltages ...................... –0.3V to 6V
TH1 TH2 FB1 FB2
Topside Driver Voltages
PGOOD1 Voltage ......................................... –0.3V to 6V
BOOST1, BOOST2 ................................. –0.3V to 46V
Switch Voltage (SW1, SW2) ........................ –5V to 40V
(BOOST1-SW1), (BOOST2-SW2) ................ –0.3V to 6V
RUN1, RUN2 ............................................... –0.3V to 8V
Maximum Current Sourced Into Pin
SS1, SS2, INTV Voltages ......................... –0.3V to 6V
CC
Operating Junction Temperature Range
(Note 2).................................................. –40°C to 125°C
Maximum Junction Temperature (Note 3) ............ 125°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec)
from Source >8V...............................................100μA
+
–
+
–
SENSE1 , SENSE2 , SENSE1
SSOP ................................................................ 300°C
SENSE2 Voltages...................................... –0.3V to 28V
PLLIN/MODE, FREQ Voltages .............. –0.3V to INTV
CC
PIN CONFIGURATION
TOP VIEW
TOP VIEW
1
2
SS1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
I
TH1
PGOOD1
TG1
V
FB1
+
3
SENSE1
SENSE1
28 27 26 25 24 23
+
–
SENSE1
SENSE1
1
2
3
4
5
6
7
8
22
21
20
19
18
17
16
15
BOOST1
BG1
4
SW1
–
5
BOOST1
BG1
FREQ
PLLIN/MODE
SGND
FREQ
PLLIN/MODE
SGND
V
IN
6
PGND
29
SGND
7
V
IN
EXTV
CC
CC
8
PGND
RUN1
RUN1
INTV
BG2
9
EXTV
CC
RUN2
RUN2
–
10
11
12
13
14
INTV
CC
SENSE2
–
SENSE2
BOOST2
+
BG2
SENSE2
9
10 11 12 13 14
UFD PACKAGE
BOOST2
SW2
V
FB2
TH2
I
TG2
SS2
28-LEAD (4mm s 5mm) PLASTIC QFN
GN PACKAGE
28-LEAD PLASTIC SSOP
T
= 125°C, θ = 43°C/W
JMAX
JA
EXPOSED PAD (PIN 29) IS SGND, MUST BE SOLDERED TO PCB
T
= 125°C, θ = 90°C/W
JA
JMAX
ORDER INFORMATION
LEAD FREE FINISH
LTC3858EUFD-1#PBF
LTC3858IUFD-1#PBF
LTC3858EGN-1#PBF
LTC3858IGN-1#PBF
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
LTC3858EUFD-1#TRPBF 38581
28-Lead (4mm × 5mm) Plastic QFN
28-Lead (4mm × 5mm) Plastic QFN
28-Lead Plastic SSOP
LTC3858IUFD-1#TRPBF
LTC3858EGN-1#TRPBF
LTC3858IGN-1#TRPBF
38581
LTC3858GN-1
LTC3858GN-1
28-Lead Plastic SSOP
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
38581fd
2
LTC3858-1
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = 12V, VRUN1,2 = 5V, EXTVCC = 0V unless
otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
V
Input Supply Operating Voltage Range
Regulated Feedback Voltage
4
38
V
IN
(Note 4) I
= 1.2V
TH1,2
FB1,2
l
–40°C to 125°C
–40°C to 85°C
0.788
0.792
0.800
0.800
0.812
0.808
V
V
I
Feedback Current
(Note 4)
5
50
nA
FB1,2
V
V
Reference Voltage Line Regulation
Output Voltage Load Regulation
(Note 4) V = 4.5V to 38V
0.002
0.02
%/V
REFLNREG
LOADREG
IN
(Note4)
l
l
Measured in Servo Loop,
0.01
0.1
%
∆I Voltage = 1.2V to 0.7V
TH
(Note4)
Measured in Servo Loop,
–0.01
2
–0.1
%
∆I Voltage = 1.2V to 2V
TH
g
Transconductance Amplifier g
Input DC Supply Current
(Note 4) I = 1.2V, Sink/Source = 5μA
TH1,2
mmho
m1,2
m
I
(Note 5)
Q
Pulse Skip or Forced Continuous Mode
(One Channel On)
Pulse Skip or Forced Continuous Mode
(Both Channels On)
RUN1 = 5V and RUN2 = 0V, V = 0.83V (No Load) or
1.3
2
mA
mA
μA
FB1
RUN1 = 0V and RUN2 = 5V, V = 0.83V (No Load)
FB2
RUN1,2 = 5V, V
= 0.83V (No Load)
FB1,2
Sleep Mode (One Channel On)
RUN1 = 5V and RUN2 = 0V, V = 0.83V (No Load) or
170
250
FB1
RUN1 = 0V and RUN2 = 5V, V = 0.83V (No Load)
FB2
Sleep Mode (Both Channels On)
Shutdown
RUN1,2 = 5V, V
RUN1,2 = 0V
= 0.83V (No Load)
300
8
450
20
μA
μA
FB1,2
l
l
UVLO
Undervoltage Lockout
INTV Ramping Up
4.0
3.8
10
4.2
4.0
13
1
V
V
%
CC
INTV Ramping Down
3.6
7
CC
V
Feedback Overvoltage Protection
Measured at V
Each Channel
Each Channel
, Relative to Regulated V
FB1,2
OVL
FB1,2
+
–
+
I
I
SENSE Pin Current
μA
SENSE
SENSE
–
SENSE Pin Current
V
V
< INTV – 0.5V
1
950
μA
μA
%
μA
V
mV
V
OUT1,2
OUT1,2
CC
> INTVCC + 0.5V
550
99.4
1.0
1.28
50
DF
Maximum Duty Factor
Soft-Start Charge Current
RUN Pin On Threshold Voltage
In Dropout, FREQ = 0V
98
0.7
1.23
MAX
I
V = 0V
SS1,2
1.4
1.33
SS1,2
l
V
V
V
On
V
, V Rising
RUN1 RUN2
RUN1,2
RUN1,2
SS1,2
Hyst RUN Pin Hysteresis Voltage
LA
SS Pin Latchoff Arming Threshold
Voltage
SS Pin Latchoff Threshold Voltage
SS Discharge Current
V
, V
Rising from 1V
, V Rising from 2V
SS1 SS2
1.9
2
2.1
SS1 SS2
V
LT
V
1.3
7
1.5
10
1.7
13
V
μA
SS1,2
I
LT
Short-Circuit Condition V
= 0V
DSC1,2
FB1,2
V
V
= 5V
= 0.7V, V
SS1,2
l
V
Maximum Current Sense Threshold
Voltage
–, – = 3.3V
43
50
57
mV
SENSE(MAX)
FB1,2
SENSE1 2
Gate Driver
TG1,2
Pull-Up On-Resistance
Pull-Down On-Resistance
2.5
1.5
ꢁ
ꢁ
BG1,2
Pull-Up On-Resistance
Pull-Down On-Resistance
2.4
1.1
ꢁ
ꢁ
TG Transistion Time:
Rise Time
Fall Time
(Note 6)
TG1,2 t
TG1,2 t
C
C
= 3300pF
25
16
ns
ns
r
f
LOAD
LOAD
= 3300pF
38581fd
3
LTC3858-1
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = 12V, VRUN1,2 = 5V, EXTVCC = 0V unless
otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
BG Transistion Time:
Rise Time
Fall Time
(Note 6)
LOAD
LOAD
BG1,2 t
BG1,2 t
C
C
= 3300pF
= 3300pF
28
13
ns
ns
r
f
TG/BG t
Top Gate Off to Bottom Gate On Delay
Synchronous Switch-On Delay Time
Bottom Gate Off to Top Gate On Delay
Top Switch-On Delay Time
C
= 3300pF Each Driver
30
30
95
ns
ns
ns
1D
LOAD
BG/TG t
C
LOAD
= 3300pF Each Driver
1D
t
Minimum On-Time
(Note 7)
6V < V < 38V, V = 0V
EXTVCC
ON(MIN)
INTV Linear Regulator
CC
V
V
V
V
V
V
Internal V Voltage
4.85
4.85
4.5
5.1
0.7
5.1
0.6
4.7
250
5.35
1.1
5.35
1.1
V
%
V
%
V
INTVCCVIN
LDOVIN
CC
IN
INTV Load Regulation
I
CC
= 0mA to 50mA, V
= 0V
CC
EXTVCC
Internal V Voltage
6V < V < 13V
EXTVCC
INTVCCEXT
LDOEXT
CC
INTV Load Regulation
I
CC
= 0mA to 50mA, V
= 8.5V
CC
EXTVCC
EXTV Switchover Voltage
EXTV Ramping Positive
4.9
EXTVCC
CC
CC
EXTV Hysteresis Voltage
mV
LDOHYS
CC
Oscillator and Phase-Locked Loop
f
f
f
f
f
f
Programmable Frequency
Programmable Frequency
Programmable Frequency
Low Fixed Frequency
High Fixed Frequency
Synchronizable Frequency
R
R
R
V
V
= 25k, PLLIN/MODE = DC Voltage
= 65k, PLLIN/MODE = DC Voltage
= 105k, PLLIN/MODE = DC Voltage
= 0V, PLLIN/MODE = DC Voltage
105
440
835
350
535
kHz
kHz
kHz
kHz
kHz
kHz
25kꢁ
65kꢁ
105kꢁ
LOW
FREQ
FREQ
FREQ
FREQ
FREQ
375
505
320
485
75
380
585
850
= INTV , PLLIN/MODE = DC Voltage
CC
HIGH
SYNC
l
PLLIN/MODE = External Clock
PGOOD1 Output
V
PGOOD1 Voltage Low
PGOOD1 Leakage Current
PGOOD1 Trip Level
I
= 2mA
= 5V
0.2
0.4
1
V
μA
PGL
PGOOD
I
V
V
V
PGOOD
PGOOD
V
with Respect to Set Regulated Voltage
Ramping Negative
PG
FB
FB
–13
7
–10
2.5
–7
13
%
%
Hysteresis
V
V
with Respect to Set Regulated Voltage
Ramping Positive
FB
FB
10
2.5
%
%
Hysteresis
t
Delay for Reporting a Fault (PGOOD Low)
25
μs
PG
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Ratings for extended periods may affect device reliability and
lifetime.
where θ = 43°C/W for the QFN package and θ = 90°C/W for the SSOP
JA
JA
package.
Note 4: The LTC3858-1 is tested in a feedback loop that servos V
to
ITH1,2
a specified voltage and measures the resultant V . The specification at
FB1,2
Note 2: The LTC3858-1 is tested under pulsed conditions such that
85°C is not tested in production. This specification is assured by design,
characterization and correlation to production testing at 125°C.
T ≈ T . The LTC3858E-1 is guaranteed to meet performance specifications
J
A
from 0°C to 85°C. Specifications over the –40°C to 125°C operating
junction temperature range are assured by design, characterization and
correlation with statistical process controls. The LTC3858I-1 is guaranteed
over the full –40°C to 125°C operating junction temperature range.
Note that the maximum ambient temperature is determined by specific
operating conditions in conjunction with board layout, the rated package
thermal resistance and other environmental factors.
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See Applications information.
Note 6: Rise and fall times are measured using 10% and 90% levels. Delay
times are measured using 50% levels
Note 7: The minimum on-time condition is specified for an inductor peak-
to-peak ripple current ≥ of I
(See Minimum On-Time Considerations in
MAX
the Applications Information section).
Note 3: T is calculated from the ambient temperature T and power
J
A
dissipation P according to the following formula:
D
T = T + (P • θ )
JA
J
A
D
38581fd
4
LTC3858-1
TYPICAL PERFORMANCE CHARACTERISTICS
Efficiency and Power Loss
vs Output Current
Efficiency vs Load Current
100
90
100
90
10000
1000
100
10
FIGURE 12 CIRCUIT
V
V
= 12V
IN
OUT
V
= 5V
IN
= 3.3V
80
80
70
70
V
= 12V
IN
60
50
60
50
Burst Mode
OPERATION
PULSE-
SKIPPING
MODE
FORCED
40
30
20
10
0
40
30
20
10
0
1
V
= 3.3V
CONTINUOUS
MODE
OUT
FIGURE 12 CIRCUIT
0.1
0.0001 0.001
0.01
0.1 10
1
0.0001 0.001
0.01
0.1
1
10
OUTPUT CURRENT (A)
OUTPUT CURRENT (A)
3858 G02
3858 G01
Load Step
(Forced Continuous Mode)
Load Step (Burst Mode Operation)
Efficiency vs Input Voltage
98
96
94
92
90
88
86
84
82
80
FIGURE 12 CIRCUIT
V
I
= 3.3V
= 4A
OUT
OUT
V
V
OUT
OUT
100mV/DIV
AC-
100mV/DIV
AC-
COUPLED
COUPLED
I
L
I
L
2A/DIV
2A/DIV
3858 G04
3858 G05
20 25
V
= 3.3V
20μs/DIV
V
= 3.3V
20μs/DIV
0
5
10 15
30 35 40
OUT
OUT
FIGURE 12 CIRCUIT
FIGURE 12 CIRCUIT
INPUT VOLTAGE (V)
3858 G03
Inductor Current at Light Load
Load Step (Pulse-Skipping Mode)
Soft-Start
V
OUT
FORCED
CONTINUOUS
MODE
V
OUT2
100mV/DIV
AC-
2V/DIV
COUPLED
Burst Mode
OPERATION
2A/DIV
V
OUT1
2V/DIV
I
L
2A/DIV
PULSE-
SKIPPING
MODE
3858 G06
3858 G07
3858 G08
V
= 3.3V
20μs/DIV
V
LOAD
FIGURE 12 CIRCUIT
= 3.3V
2μs/DIV
20ms/DIV
FIGURE 12 CIRCUIT
OUT
OUT
FIGURE 12 CIRCUIT
I
= 200μA
38581fd
5
LTC3858-1
TYPICAL PERFORMANCE CHARACTERISTICS
Total Input Supply Current
vs Input Voltage
EXTVCC Switchover and INTVCC
Voltages vs Temperature
INTVCC Line Regulation
400
5.6
5.2
5.2
5.1
5.1
FIGURE 12 CIRCUIT
= 3.3V
V
OUT
350
300
5.4
5.2
ONE CHANNEL ON
INTV
CC
300μA LOAD
250
200
150
100
50
5.0
4.8
4.6
4.4
4.2
EXTV RISING
CC
NO LOAD
EXTV FALLING
CC
0
5.0
4.0
10
15
25
30
35
40
5
20
0
5
10 15 20 25 30 35 40
INPUT VOLTAGE (V)
–20
5
55
80 105 130
–45
30
INPUT VOLTAGE (V)
TEMPERATURE (°C)
3858 G10
3858 G12
3858 G11
Maximum Current Sense Voltage
vs ITH Voltage
Maximum Current Sense
Threshold vs Duty Cycle
SENSE– Pin Input Bias Current
80
60
40
20
80
60
40
20
0
0
PULSE-SKIPPING MODE
FORCED CONTINUOUS MODE
Burst Mode OPERATION
(FALLING)
Burst Mode OPERATION
(RISING)
–50
–100
–150
–200
–250
–300
–350
–400
–450
–500
–550
–600
0
–20
–40
5% DUTY CYCLE
0.8
PIN VOLTAGE
1.2 1.4
0
10
15
20
25
10 20
50
60 70 80 90 100
0
0.2 0.4 0.6
1.0
5
0
30 40
V
COMMON MODE VOLTAGE (V)
I
DUTY CYCLE (%)
SENSE
TH
3858 G14
3858 G13
3858 G15
Shutdown Current vs Temperature
Foldback Current Limit
Quiescent Current vs Temperature
230
210
190
170
150
130
110
10
9
90
80
70
60
50
40
30
20
10
PLLIN/MODE = 0
V
V
= 12V
IN
OUT
= 3.3V
ONE CHANNEL ON
8
7
6
5
4
0
55
TEMPERATURE (°C)
105 130
–45 –20
5
30
80
–45 –20
5
30
55
80 105 130
0
0.1 0.2 0.3 0.4 0.5
0.9
0.6 0.7 0.8
TEMPERATURE (°C)
FEEDBACK VOLTAGE (V)
3858 G17
3858 G18
3858 G16
38581fd
6
LTC3858-1
TYPICAL PERFORMANCE CHARACTERISTICS
Regulated Feedback Voltage
vs Temperature
Soft-Start Pull-Up Current
vs Temperature
Shutdown (RUN) Threshold
vs Temperature
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
1.20
808
1.15
1.10
806
804
1.05
1.00
0.95
0.90
0.85
802
800
798
796
794
0.80
792
–45
5
30
55
80 105 130
–20
–20
5
55
80 105 130
–45
30
–20
5
55
80 105 130
–45
30
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
3858 G20
3858 G19
22554 G21
SENSE– Pin Input Current
vs Temperature
Shutdown Input Current
vs Input Voltage
Oscillator Frequency
vs Temperature
50
0
–50
14
12
800
700
600
V
= 3.3V
OUT
–100
–150
–200
–250
–300
–350
–400
–450
–500
–550
–600
FREQ = INTV
CC
10
8
500
400
300
200
100
FREQ = GND
6
4
2
V
= 28V
55
OUT
0
0
25
INPUT VOLTAGE (V)
35
40
5
10
15
20
30
–45 –20
5
30
80 105 130
–45
–20
5
30
55
80 105 130
TEMPERATURE (°C)
TEMPERATURE (°C)
3858 G22
3858 G23
3858 G24
Oscillator Frequency
vs Input Voltage
Undervoltage Lockout Threshold
vs Temperature
4.4
4.3
4.2
4.1
4.0
3.9
3.8
3.7
3.6
3.5
3.4
356
354
352
350
FREQ = GND
348
346
344
25
35
40
–45
5
30
55
80
130
5
10
15
20
30
–20
105
TEMPERATURE (°C)
INPUT VOLTAGE (V)
3858 G28
3858 G25
38581fd
7
LTC3858-1
TYPICAL PERFORMANCE CHARACTERISTICS
Latchoff Threshold Voltage
vs Temperature
INTVCC vs Load Current
5.20
5.15
5.10
2.3
V
= 12V
IN
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
ARMING THRESHOLD
EXTV = 0V
CC
5.05
5.00
4.95
LATCHOFF THRESHOLD
EXTV = 8V
CC
0
20 40 60 80 100 120 140 160 180 200
–45
5
30
55
80 105 130
–20
TEMPERATURE (°C)
LOAD CURRENT (mA)
3858 G26
3858 G27
PIN FUNCTIONS (QFN/SSOP)
–
–
LTC3858-1 operates at light loads. Pulling this pin to
ground selects Burst Mode operation. An internal 100k
resistor to ground also invokes Burst Mode operation
SENSE1 , SENSE2 (Pin 2, Pin 8/Pin 4, Pin 10): The (–)
InputtotheDifferentialCurrentComparators.Whengreater
–
than INTV – 0.5V, the SENSE pin supplies current to
CC
when the pin is floated. Tying this pin to INTV forces
the current comparator.
CC
continuous inductor current operation. Tying this pin to
FREQ (Pin 3/Pin 5): The Frequency Control Pin for the
Internal Voltage-Contolled Oscillator (VCO). Connecting
this pin to GND forces the VCO to a fixed low frequency
a voltage greater than 1.2V and less than INTV – 1.3V
CC
selects pulse-skipping operation.
SGND (Pin 5, Exposed Pad Pin 29/Pin 7): Small-signal
ground common to both controllers, must be routed
separately from high current grounds to the common (–)
of 350kHz. Connecting this pin to INTV forces the VCO
CC
to a fixed high frequency of 535kHz. Other frequencies
between 50kHz and 900kHz can be programmed using a
resistor between FREQ and GND. An internal 20μA pull-
up current develops the voltage to be used by the VCO to
control the frequency
terminals of the C capacitors. The exposed pad (QFN
IN
only) must be soldered to the PCB for rated thermal
performance.
RUN1, RUN2 (Pin 6, Pin 7/Pin 8, Pin 9): Digital Run
Control Inputs for Each Controller. Forcing either of these
pinsbelow1.2Vshutsdownthatcontroller.Forcingbothof
these pins below 0.7V shuts down the entire LTC3858-1,
reducing quiescent current to approximately 8μA. Do NOT
float these pins.
PLLIN/MODE (Pin 4/Pin 6): External Synchronization
Input to Phase Detector and Forced Continuous Mode
Input. When an external clock is applied to this pin, the
phase-locked loop will force the rising TG1 signal to be
synchronized with the rising edge of the external clock.
When not synchronizing to an external clock, this input,
which acts on both controllers, determines how the
38581fd
8
LTC3858-1
PIN FUNCTIONS (QFN/SSOP)
INTV (Pin 17/Pin 19): Output of the Internal Linear Low
TG1, TG2 (Pin 24, Pin 13/Pin 26, Pin 15): High Current
Gate Drives for Top N-Channel MOSFETs. These are the
outputs of floating drivers with a voltage swing equal to
CC
Dropout Regulator. The driver and control circuits are
powered from this voltage source. Must be decoupled to
power ground with a minimum of 4.7μF ceramic or other
INTV – 0.5V superimposed on the switch node voltage
CC
low ESR capacitor. Do not use the INTV pin for any
SW.
CC
other purpose.
PGOOD1 (Pin 25/Pin 27): Open-Drain Logic Output.
EXTV (Pin 18/Pin 20): External Power Input to an
PGOOD1 is pulled to ground when the voltage on the V
pin is not within 10% of its set point.
CC
FB1
Internal LDO Connected to INTV . This LDO supplies
CC
INTV power, bypassing the internal LDO powered from
CC
SS1, SS2 (Pin 26, Pin 12/Pin 28, Pin 14): External Soft-
V
whenever EXTV is higher than 4.7V. See EXTV
IN
CC CC
Start Input. The LTC3858-1 regulates the V
voltage
FB1,2
Connection in the Applications Information section. Do
to the smaller of 0.8V or the voltage on the SS1,2 pin. An
internal 1μA pull-up current source is connected to this
pin. A capacitor to ground at this pin sets the ramp time
to final regulated output voltage. This pin is also used as
the short-circuit latchoff timer.
not exceed 14V on this pin.
PGND (Pin 19/Pin 21): Driver Power Ground. Connects to
thesourcesofbottom(synchronous)N-channelMOSFETs
and the (–) terminal(s) of C .
IN
V
(Pin 20/Pin 22): Main Input Supply Pin. A bypass
I
, I
(Pin 27, Pin 11/Pin 1, Pin 13): Error Amplifier
IN
TH1 TH2
capacitor should be tied between this pin and the signal
Outputs and Switching Regulator Compensation Points.
Each associated channel’s current comparator trip point
increases with this control voltage.
ground pin.
BG1, BG2 (Pin 21, Pin 16/Pin 23, Pin 18): High Current
Gate Drives for Bottom (Synchronous) N-Channel
MOSFETs. Voltage swing at these pins is from ground
V
, V
FB1 FB2
(Pin 28, Pin 10/Pin 2, Pin 12): Receives the
remotelysensedfeedbackvoltageforeachcontrollerfrom
an external resistive divider across the output.
to INTV .
CC
+
+
BOOST1, BOOST2 (Pin 22, Pin 15/Pin 24, Pin 17):
Bootstrapped Supplies to the Topside Floating Drivers.
CapacitorsareconnectedbetweentheBOOSTandSWpins
SENSE1 , SENSE2 (Pin 1, Pin 9/Pin 3, Pin 11): The
(+) input to the differential current comparators that are
normally connected to inductor DCR sensing networks
andSchottkydiodesaretiedbetweentheBOOSTandINTV
or current sensing resistors. The I pin voltage and
CC
TH
–
+
pins. Voltage swing at the BOOST pins is from INTV to
controlledoffsetsbetweentheSENSE andSENSE pinsin
CC
(V + INTV ).
conjunction with R
set the current trip threshold.
IN
CC
SENSE
SW1, SW2 (Pin 23, Pin 14/Pin 25, Pin 16): Switch Node
Connections to Inductors.
38581fd
9
LTC3858-1
FUNCTIONAL DIAGRAM
INTV
V
IN
CC
DUPLICATE FOR SECOND
CONTROLLER CHANNEL
BOOST
D
B
C
B
TG
DROP
OUT
DET
TOP
BOT
+
C
IN
PGOOD1
0.88V
D
BOT
–
SW
TOP ON
V
S
R
Q
FB1
+
INTV
CC
Q
–
SWITCH
LOGIC
0.72V
BG
SHDN
C
OUT
PGND
20μA
FREQ
V
OUT
VCO
CLK2
CLK1
+
–
R
SENSE
0.425V
SLEEP
L
ICMP
IR
+
–
+
–
PFD
+
+
–
–
+
3mV
SENSE
SENSE
SYNC
DET
2(V
)
FB
0.45V
PLLIN/MODE
–
100k
SLOPE COMP
V
FB
R
B
+
V
IN
0.80V
TRACK/SS
EA
–
R
A
EXTV
CC
+
–
OV
C
C
0.88V
I
TH
5.1V
LDO
EN
5.1V
LDO
EN
0.5μA
11V
SHDN
RST
FB
C
C2
R
C
FOLDBACK
+
–
2(V
)
1μA
4.7V
SS
SGND
INTV
RUN
CC
SHORT CKT
LATCHOFF
C
SS
SHDN
10μA
38581 FD
OPERATION
Main Control Loop
the V pin (which is generated with an external resistor
FB
divider connected across the output voltage, V , to
OUT
The LTC3858-1 uses a constant frequency, current mode
step-down architecture with the two controller channels
operating 180 degrees out of phase. During normal op-
eration, each external top MOSFET is turned on when the
clock for that channel sets the RS latch, and is turned off
when the main current comparator, ICMP, resets the RS
latch. The peak inductor current at which ICMP trips and
ground)totheinternal0.800Vreferencevoltage.Whenthe
load current increases, it causes a slight decrease in V
FB
relative to the reference, which causes the EA to increase
the I voltage until the average inductor current matches
TH
the new load current.
After the top MOSFET is turned off each cycle, the bottom
MOSFETisturnedonuntileithertheinductorcurrentstarts
to reverse, as indicated by the current comparator IR, or
the beginning of the next clock cycle.
resets the latch is controlled by the voltage on the I pin,
TH
which is the output of the error amplifier, EA. The error
amplifier compares the output voltage feedback signal at
38581fd
10
LTC3858-1
OPERATION (Refer to the Functional Diagram)
INTV /EXTV Power
internal reference, the LTC3858-1 regulates the V volt-
CC
CC
FB
age to the SS pin voltage instead of the 0.8V reference.
This allows the SS pin to be used to program a soft-start
by connecting an external capacitor from the SS pin to
SGND. An internal 1μA pull-up current charges this ca-
pacitor creating a voltage ramp on the SS pin. As the SS
voltage rises linearly from 0V to 0.8V (and beyond up to
the absolute maximum rating of 6V), the output voltage
Power for the top and bottom MOSFET drivers and most
otherinternalcircuitryisderivedfromtheINTV pin.When
CC
the EXTV pin is left open or tied to a voltage less than
CC
4.7V, the V LDO (low dropout linear regulator) supplies
IN
5.1V from V to INTV . If EXTV is taken above 4.7V,
IN
CC
CC
theV LDOisturnedoffandtheEXTV LDOisturnedon.
IN
CC
Onceenabled,theEXTV LDOsupplies5.1VfromEXTV
CC
CC
V
rises smoothly from zero to its final value.
OUT
to INTV . Using the EXTV pin allows the INTV power
CC
CC
CC
to be derived from a high efficiency external source such
as one of the LTC3858-1 switching regulator outputs.
Short-Circuit Latch-Off
After the controller has been started and been given
adequate time to ramp up the output voltage, the SS
capacitor is used in a short-circuit time-out circuit. Spe-
cifically, once the voltage on the SS pin rises above 2V
(the arming threshold), the short-circuit timeout circuit is
enabled (see Figure 1). If the output voltage falls below
70% of its nominal regulated voltage, the SS capacitor
begins discharging with a net 9μA pull-down current on
the assumption that the output is in an overcurrent and/or
short-circuit condition. If the condition lasts long enough
to allow the SS pin voltage to fall below 1.5V (the latchoff
threshold) , the controller will shut down (latch off) until
Each top MOSFET driver is biased from the floating boot-
strap capacitor, C , which normally recharges during each
B
switching cycle through an external diode when the top
MOSFET turns off. If the input voltage V decreases to
IN
a voltage close to V , the loop may enter dropout and
OUT
attempt to turn on the top MOSFET continuously. The
dropout detector detects this and forces the top MOSFET
off for about one-twelfth of the clock period every tenth
cycle to allow C to recharge.
B
Shutdown and Start-Up (RUN1, RUN2 and
SS1, SS2 Pins)
the RUN pin voltage or the V voltage is recycled.
IN
The two channels of the LTC3858-1 can be independently
shutdownusingtheRUN1andRUN2pins.Pullingeitherof
these pins below 1.26V shuts down the main control loop
for that controller. Pulling both pins below 0.7V disables
both controllers and most internal circuits, including the
The delay time from when an short-circuit occurs until
the controller latches off can be calculated using the fol-
lowing equation:
VSS – 1.5V
tLATCH ≈ CSS
9μA
INTV LDOs. In this state, the LTC3858-1 draws only 8μA
CC
of quiescent current.
where V is the initial voltage (must be greater than 2V)
SS
The RUN pin may be externally pulled up or driven directly
by logic. When driving the RUN pin with a low impedance
source, do not exceed the absolute maximum rating of
8V on this pin. The RUN pin has an internal 11V voltage
clamp that allows the RUN pin to be connected through a
ontheSSpinatthetimetheshort-circuitoccurs. Normally
the SS pin voltage will have been pulled up to the INTV
voltage (5.1V) by the internal 1μA pull-up current.
CC
Note that the two controllers on the LTC3858-1 have
separate, independent short-circuit latchoff circuits.
Latchoff can be overridden/defeated by connecting a
resistor to a higher voltage (for example, V ), so long as
IN
the maximum current into the RUN pin does not exceed
100μA.
resistor 150k or less from the SS pin to INTV . This
CC
resistor provides enough pull-up current to overcome the
9μApull-downcurrentpresentduringashort-circuit.Note
that this resistor also shortens the soft-start period.
The start-up of each controller’s output voltage V
controlled by the voltage on the SS pin for that channel.
When the voltage on the SS pin is less than the 0.8V
is
OUT
38581fd
11
LTC3858-1
OPERATION (Refer to the Functional Diagram)
INTV
CC
WhenacontrollerisenabledforBurstModeoperation, the
minimum peak current in the inductor is set to approxi-
mately 30% of the maximum sense voltage even though
SS VOLTAGE
2V
1.5V
the voltage on the I pin indicates a lower value. If the
0.8V
TH
average inductor current is higher than the load current,
LATCHOFF
COMMAND
the error amplifier, EA, will decrease the voltage on the I
TH
pin. When the I voltage drops below 0.425V, the internal
TH
0V
SS PIN
CURRENT
sleep signal goes high (enabling “sleep” mode) and both
external MOSFETs are turned off.
1μA
1μA
–9μA
OUTPUT
VOLTAGE
In sleep mode, much of the internal circuitry is turned off,
reducingthequiescentcurrent.Ifonechannelisshutdown
and the other channel is in sleep mode, the LTC3858-1
draws only 170μA of quiescent current. If both channels
areinsleepmode,theLTC3858-1drawsonly300μAofqui-
escent current. In sleep mode, the load current is supplied
by the output capacitor. As the output voltage decreases,
the EA’s output begins to rise. When the output voltage
38581 F01
LATCHOFF
ENABLE
ARMING
SOFT-START INTERVAL
t
LATCH
Figure 1. Latchoff Timing Diagram
Foldback Current
drops enough, the I pin is reconnected to the output
TH
of the EA, the sleep signal goes low, and the controller
resumes normal operation by turning on the top external
MOSFET on the next cycle of the internal oscillator.
On the other hand, when the output voltage falls to less
than 70% of its nominal level, foldback current limiting
is also activated, progressively lowering the peak current
limit in proportion to the severity of the overcurrent or
short-circuit condition. Even if a short-circuit is present
and the short-circuit latchoff is not yet enabled (when
SS voltage has not yet reached 2V), a safe, low output
current is provided due to internal current foldback and
actual power wasted is low due to the efficient nature of
the current mode switching regulator. Foldback current
limiting is disabled during the soft-start interval (as long
When a controller is enabled for Burst Mode operation,
the inductor current is not allowed to reverse. The reverse
current comparator, IR, turns off the bottom external
MOSFET just before the inductor current reaches zero,
preventing it from reversing and going negative. Thus,
the controller is in discontinuous operation.
In forced continuous operation or when clocked by an
external clock source to use the phase-locked loop (see
Frequency Selection and Phase-Locked Loop section),
the inductor current is allowed to reverse at light loads
or under large transient conditions. The peak inductor
as the V voltage is keeping up with the SS voltage).
FB
Light Load Current Operation (Burst Mode Operation,
Pulse-Skipping or Forced Continuous Conduction)
(PLLIN/MODE Pin)
current is determined by the voltage on the I pin, just
TH
as in normal operation. In this mode, the efficiency at light
loads is lower than in Burst Mode operation. However,
continuous operation has the advantages of lower output
voltage ripple and less interference to audio circuitry. In
forced continuous mode, the output ripple is independent
of load current.
The LTC3858-1 can be enabled to enter high efficiency
Burst Mode operation, constant frequency pulse-skipping
mode, or forced continuous conduction mode at low load
currents. To select Burst Mode operation, tie the PLLIN/
MODE pin to ground. To select forced continuous opera-
tion, tie the PLLIN/MODE pin to INTV . To select pulse-
CC
WhenthePLLIN/MODEpinisconnectedforpulse-skipping
mode, the LTC3858-1 operates in PWM pulse-skipping
mode at light loads. In this mode, constant frequency
skipping mode, tie the PLLIN/MODE pin to a DC voltage
greater than 1.2V and less than INTV – 1.3V.
CC
38581fd
12
LTC3858-1
OPERATION (Refer to the Functional Diagram)
operation is maintained down to approximately 1% of
designedmaximumoutputcurrent. Atverylightloads, the
current comparator, ICMP, may remain tripped for several
cycles and force the external top MOSFET to stay off for
the same number of cycles (i.e., skipping pulses). The
inductor current is not allowed to reverse (discontinuous
operation). This mode, like forced continuous operation,
exhibits low output ripple as well as low audio noise and
reduced RF interference when compared to Burst Mode
operation. It provides higher light load efficiency than
forced continuous mode, but not nearly as high as Burst
Mode operation.
is applied. If prebiased near the external clock frequency,
the PLL loop only needs to make slight changes to the
VCO input in order to synchronize the rising edge of the
external clock’s to the rising edge of TG1. The ability to
pre-bias the loop filter allows the PLL to lock-in rapidly
without deviating far from the desired frequency.
The typical capture range of the phase-locked loop is
from approximately 55kHz to 1MHz, with a guarantee
over all manufacturing variations to be between 75kHz
and 850kHz.
The typical input clock thresholds on the PLLIN/MODE
pin are 1.6V (rising) and 1.1V (falling).
Frequency Selection and Phase-Locked Loop
(FREQ and PLLIN/MODE Pins)
Output Overvoltage Protection
An overvoltage comparator guards against transient over-
shoots as well as other more serious conditions that may
The selection of switching frequency is a tradeoff between
efficiency and component size. Low frequency opera-
tion increases efficiency by reducing MOSFET switching
losses, but requires larger inductance and/or capacitance
to maintain low output ripple voltage.
overvoltage the output. When the V pin rises by more
FB
than 10% above its regulation point of 0.800V, the top
MOSFET is turned off and the bottom MOSFET is turned
on until the overvoltage condition is cleared.
The switching frequency of the LTC3858-1’s controllers
can be selected using the FREQ pin.
Power Good (PGOOD) Pin
If the PLLIN/MODE pin is not being driven by an external
clock source, the FREQ pin can be tied to SGND, tied to
The PGOOD1 pin is connected to an open drain of an
internal N-channel MOSFET. The MOSFET turns on and
INTV orprogrammedthroughanexternalresistor. Tying
CC
pullsthePGOOD1pinlowwhenthecorrespondingV pin
FB1
FREQ to SGND selects 350kHz while tying FREQ to INTV
CC
voltage is not within 10% of the 0.8V reference voltage.
selects 535kHz. Placing a resistor between FREQ and
SGND allows the frequency to be programmed between
50kHz and 900kHz.
The PGOOD1 pin is also pulled low when the RUN1 pin
is low (shut down). When the V pin voltage is within
FB1
the 10% requirement, the MOSFET is turned off and the
pin is allowed to be pulled up by an external resistor to a
source no greater than 6V.
A phase-locked loop (PLL) is available on the LTC3858-1
to synchronize the internal oscillator to an external clock
source that is connected to the PLLIN/MODE pin. The
phase detector adjusts the voltage (through an internal
lowpass filter) of the VCO input to align the turn-on of
controller 1’s external top MOSFET to the rising edge of
the synchronizing signal. Thus, the turn-on of controller
2’s external top MOSFET is 180 degrees out of phase to
the rising edge of the external clock source.
Theory and Benefits of 2-Phase Operation
Why the need for 2-phase operation? Up until the
2-phasefamily, constantfrequencydualswitchingregula-
tors operated both channels in phase (i.e., single phase
operation). This means that both switches turned on at
the same time, causing current pulses of up to twice the
amplitude of those for one regulator to be drawn from the
input capacitor and battery. These large amplitude current
The VCO input voltage is pre-biased to the operating
frequency set by the FREQ pin before the external clock
38581fd
13
LTC3858-1
OPERATION (Refer to the Functional Diagram)
pulses increased the total RMS current flowing from the
input capacitor, requiring the use of more expensive input
capacitorsandincreasingbothEMIandlossesintheinput
capacitor and battery.
Of course, the improvement afforded by 2-phase opera-
tion is a function of the dual switching regulator’s relative
duty cycles which, in turn, are dependent upon the input
voltage V (Duty Cycle = V /V ). Figure 3 shows how
IN
OUT IN
theRMSinputcurrentvariesforsingle-phaseand2-phase
operation for 3.3V and 5V regulators over a wide input
voltage range.
With 2-phase operation, the two channels of the dual
switchingregulatorareoperated180degreesoutofphase.
Thiseffectivelyinterleavesthecurrentpulsesdrawnbythe
switches,greatlyreducingtheoverlaptimewheretheyadd
together. The result is a significant reduction in total RMS
input current, which in turn allows less expensive input
capacitors to be used, reduces shielding requirements for
EMI and improves real world operating efficiency.
It can readily be seen that the advantages of 2-phase op-
eration are not just limited to a narrow operating range,
for most applications is that 2-phase operation will reduce
theinputcapacitorrequirementtothatforjustonechannel
operating at maximum current and 50% duty cycle.
Figure2comparestheinputwaveformsforarepresentative
single phase dual switching regulator to the LTC3858-1
2-phase dual switching regulator. An actual measure-
ment of the RMS input current under these conditions
shows that 2-phase operation dropped the input current
3.0
SINGLE PHASE
DUAL CONTROLLER
2.5
2.0
1.5
1.0
0.5
0
from 2.53A
to 1.55A
. While this is an impressive
RMS
RMS
2-PHASE
DUAL CONTROLLER
reduction in itself, remember that the power losses are
2
proportionaltoI
,meaningthattheactualpowerwasted
RMS
is reduced by a factor of 2.66. The reduced input ripple
voltage also means less power is lost in the input power
path, which could include batteries, switches, trace/con-
nectorresistancesandprotectioncircuitry.Improvements
inbothconductedandradiatedEMIalsodirectlyaccrueas
a result of the reduced RMS input current and voltage.
V
V
= 5V/3A
O1
O2
= 3.3V/3A
0
10
20
30
40
INPUT VOLTAGE (V)
3858 F03
Figure 3. RMS Input Current Comparison
5V SWITCH
20V/DIV
3.3V SWITCH
20V/DIV
INPUT CURRENT
5A/DIV
INPUT VOLTAGE
500mV/DIV
38581 F01
I
= 2.53A
I = 1.55A
IN(MEAS) RMS
IN(MEAS)
RMS
Figure 2. Input Waveforms Comparing Single-Phase (a) and 2-Phase (b) Operation for Dual Switching Regulators
Converting 12V to 5V and 3.3V at 3A Each. The Reduced Input Ripple with the 2-Phase Regulator Allows
Less Expensive Input Capacitors, Reduces Shielding Requirements for EMI and Improves Efficiency
38581fd
14
LTC3858-1
APPLICATIONS INFORMATION
The Typical Application on the first page is a basic
LTC3858-1applicationcircuit.LTC3858-1canbeconfigured
to use either DCR (inductor resistance) sensing or low
value resistor sensing. The choice between the two cur-
rent sensing schemes is largely a design tradeoff between
cost, power consumption and accuracy. DCR sensing is
becoming popular because it saves expensive current
sensing resistors and is more power efficient, especially
in high current applications. However, current sensing
resistors provide the most accurate current limits for the
controller. Other external component selection is driven
by the load requirement, and begins with the selection of
programmed current limit unpredictable. If inductor DCR
sensing is used (Figure 5b), resistor R1 should be placed
closetotheswitchingnode,topreventnoisefromcoupling
into sensitive small-signal nodes.
TO SENSE FILTER,
NEXT TO THE CONTROLLER
C
OUT
38581 F04
INDUCTOR OR R
SENSE
Figure 4. Sense Lines Placement with Inductor or Sense Resistor
R
(if R
is used) and inductor value. Next, the
SENSE
SENSE
V
V
IN
IN
powerMOSFETsandSchottkydiodesareselected. Finally,
input and output capacitors are selected.
INTV
CC
BOOST
TG
+
–
SENSE and SENSE Pins
SW
V
OUT
+
–
LTC3858-1
The SENSE and SENSE pins are the inputs to the current
comparators. The common mode voltage range on these
pins is 0V to 28V (Abs Max), enabling the LTC3858-1 to
regulate output voltages up to a nominal 24V (allowing
margin for tolerances and transients).
BG
+
SENSE
PLACE CAPACITOR NEAR
SENSE PINS
–
SENSE
SGND
+
38581 F05a
The SENSE pin is high impedance over the full common
mode range, drawing at most 1μA. This high impedance
allows the current comparators to be used in inductor
DCR sensing.
(5a) Using a Resistor to Sense Current
V
INTV
V
IN
IN
–
The impedance of the SENSE pin changes depending on
CC
–
the common mode voltage. When SENSE is less than
INDUCTOR
DCR
BOOST
TG
INTV – 0.5V, a small current of less than 1μA flows out
CC
L
–
of the pin. When SENSE is above INTV + 0.5V, a higher
CC
SW
V
OUT
LTC3858-1
current(~550μA)flowsintothepin.BetweenINTV –0.5V
CC
BG
andINTV +0.5V, thecurrenttransitionsfromthesmaller
CC
R1
C1* R2
current to the higher current.
+
SENSE
Filter components mutual to the sense lines should be
placed close to the LTC3858-1, and the sense lines should
run close together to a Kelvin connection underneath the
current sense element (shown in Figure 4). Sensing cur-
rent elsewhere can effectively add parasitic inductance
and capacitance to the current sense element, degrading
the information at the sense terminals and making the
–
SENSE
SGND
38581 F05b
R2
R1 + R2
L
DCR
||
(R1 R2) • C1 =
*PLACE C1 NEAR
SENSE PINS
R
= DCR
SENSE(EQ)
(5b) Using the Inductor DCR to Sense Current
Figure 5. Current Sensing Methods
38581fd
15
LTC3858-1
APPLICATIONS INFORMATION
Low Value Resistors Current Sensing
using a good RLC meter, but the DCR tolerance is not
always the same and varies with temperature; consult the
manufacturers’ data sheets for detailed information.
A typical sensing circuit using a discrete resistor is shown
in Figure 5a. R
output current.
is chosen based on the required
SENSE
Using the inductor ripple current value from the Inductor
Value Calculation section, the target sense resistor value
is:
The current comparator has a maximum threshold
of 50mV (typ). The current comparator
V
SENSE(MAX)
threshold voltage sets the peak of the inductor current,
yielding a maximum average output current, I , equal
VSENSE(MAX)
RSENSE(EQUIV)
=
MAX
ΔIL
to the peak value less half the peak-to-peak ripple current,
IMAX +
2
∆I .Tocalculatethesenseresistorvalue,usetheequation:
L
To ensure that the application will deliver full load current
over the full operating temperature range, choose the
minimum value for the Maximum Current Sense Thresh-
VSENSE(MAX)
RSENSE
=
ΔIL
2
IMAX
+
old Voltage (V
table.
) in the Electrical Characteristics
SENSE(MAX)
When using the controller in very low dropout conditions,
themaximumoutputcurrentlevelwillbereducedduetothe
internal compensation required to meet stability criterion
for buck regulators operating at greater than 50% duty
factor.AcurveisprovidedintheTypicalPerformanceChar-
acteristicssectiontoestimatethisreductioninpeakoutput
current depending upon the operating duty factor.
Next, determine the DCR of the inductor. When provided,
use the manufacturer’s maximum value, usually given at
20°C. Increase this value to account for the temperature
coefficient of copper, which is approximately 0.4%/°C.
A conservative value for T
is 100°C.
L(MAX)
To scale the maximum inductor DCR to the desired sense
resistor value, use the divider ratio:
Inductor DCR Sensing
RSENSE(EQUIV)
For applications requiring the highest possible efficiency
at high load currents, the LTC3850 is capable of sensing
the voltage drop across the inductor DCR, as shown in
Figure 5b. The DCR of the inductor represents the small
amount of DC resistance of the copper wire, which can be
lessthan1mꢁfortoday’slowvalue,highcurrentinductors.
In a high current application requiring such an inductor,
power loss through a sense resistor would cost several
points of efficiency compared to inductor DCR sensing.
RD =
DCRMAX atT
L(MAX)
C1 is usually selected to be in the range of 0.1μF to 0.47μF.
This forces R1||R2 to around 2k, reducing error that might
have been caused by the SENSE pin’s 1μA current.
+
The equivalent resistance R1||R2 is scaled to the room
temperature inductance and maximum DCR:
L
R1|| R2 =
If the external R1||R2 • C1 time constant is chosen to be
exactly equal to the L/DCR time constant, the voltage drop
across the external capacitor is equal to the drop across
theinductorDCRmultipliedbyR2/(R1+R2).R2scalesthe
voltage across the sense terminals for applications where
the DCR is greater than the target sense resistor value.
To properly dimension the external filter components, the
DCR of the inductor must be known. It can be measured
DCR at 20°C • C1
(
)
The sense resistor values are:
R1|| R2
RD
R1• RD
1– RD
R1=
; R2 =
38581fd
16
LTC3858-1
APPLICATIONS INFORMATION
The maximum power loss in R1 is related to duty cycle,
and will occur in continuous mode at the maximum input
voltage:
30% of the current limit determined by R
. Lower
SENSE
inductor values (higher ∆I ) will cause this to occur at
L
lower load currents, which can cause a dip in efficiency in
the upper range of low current operation. In Burst Mode
operation, lower inductance values will cause the burst
frequency to decrease.
V
IN(MAX) – VOUT • V
(
)
OUT
P
LOSS
R1=
R1
Ensure that R1 has a power rating higher than this value.
If high efficiency is necessary at light loads, consider
this power loss when deciding to use inductor DCR
sensing or sense resistors. Light load power loss can be
modestly higher with a DCR network than with a sense
resistor,duetotheextraswitchinglossesincurredthrough
R1. However, DCR sensing eliminates a sense resistor,
reduces conduction losses and provides higher efficiency
at heavy loads. Peak efficiency is about the same with
either method.
Inductor Core Selection
Once the value for L is known, the type of inductor must
be selected. High efficiency converters generally cannot
affordthecorelossfoundinlowcostpowderedironcores,
forcingtheuseofmoreexpensiveferriteormolypermalloy
cores. Actual core loss is independent of core size for a
fixedinductorvalue,butitisverydependentoninductance
value selected. As inductance increases, core losses go
down. Unfortunately, increased inductance requires more
turns of wire and therefore copper losses will increase.
Inductor Value Calculation
Ferrite designs have very low core loss and are preferred
for high switching frequencies, so design goals can con-
centrate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses abruptly when the peak design current is
exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
The operating frequency and inductor selection are inter-
related in that higher operating frequencies allow the use
of smaller inductor and capacitor values. So why would
anyone ever choose to operate at lower frequencies with
larger components? The answer is efficiency. A higher
frequency generally results in lower efficiency because
of MOSFET gate charge losses. In addition to this basic
trade-off, the effect of inductor value on ripple current and
low current operation must also be considered.
Power MOSFET and Schottky Diode
(Optional) Selection
Theinductorvaluehasadirecteffectonripplecurrent.The
Two external power MOSFETs must be selected for each
controller in the LTC3858-1: one N-channel MOSFET for
the top (main) switch, and one N-channel MOSFET for the
bottom (synchronous) switch.
inductor ripple current ∆I decreases with higher induc-
L
tance or higher frequency and increases with higher V :
IN
⎛
⎞
⎟
⎠
VOUT
V
1
ΔIL =
VOUT 1–
⎜
f L
( )( )
⎝
Thepeak-to-peakdrivelevelsaresetbytheINTV voltage.
IN
CC
This voltage is typically 5.1V during start-up (see EXTV
CC
Accepting larger values of ∆I allows the use of low
Pin Connection). Consequently, logic-level threshold
L
inductances, but results in higher output voltage ripple
MOSFETs must be used in most applications. The only
and greater core losses. A reasonable starting point for
exception is if low input voltage is expected (V < 4V);
IN
GS(TH)
DSS
setting ripple current is ∆I = 0.3(I
). The maximum
MAX
then, sub-logic level threshold MOSFETs (V
< 3V)
speci-
L
∆I occurs at the maximum input voltage.
should be used. Pay close attention to the BV
L
fication for the MOSFETs as well; many of the logic-level
MOSFETs are limited to 30V or less.
The inductor value also has secondary effects. The tran-
sition to Burst Mode operation begins when the average
inductor current required results in a peak current below
38581fd
17
LTC3858-1
APPLICATIONS INFORMATION
Selection criteria for the power MOSFETs include the on-
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during
a short-circuit when the synchronous switch is on close
to 100% of the period.
resistance, R
, Miller capacitance, C , input
DS(ON) MILLER
voltage and maximum output current. Miller capacitance,
, can be approximated from the gate charge curve
C
MILLER
usually provided on the MOSFET manufacturers’ data
sheet. C is equal to the increase in gate charge
The term (1+ δ) is generally given for a MOSFET in the
MILLER
form of a normalized R
vs Temperature curve, but
DS(ON)
along the horizontal axis while the curve is approximately
δ = 0.005/°C can be used as an approximation for low
voltage MOSFETs.
flat divided by the specified change in V . This result is
DS
then multiplied by the ratio of the application applied V
DS
TheoptionalSchottkydiodesD1andD2showninFigure 10
conduct during the dead-time between the conduction of
the two power MOSFETs. This prevents the body diode of
thebottomMOSFETfromturningon,storingchargeduring
the dead-time and requiring a reverse recovery period that
to the gate charge curve specified V . When the IC is
DS
operating in continuous mode the duty cycles for the top
and bottom MOSFETs are given by:
VOUT
V
IN
Main Switch Duty Cycle =
could cost as much as 3% in efficiency at high V . A 1A
IN
V − V
to 3A Schottky is generally a good compromise for both
regions of operation due to the relatively small average
current.Largerdiodesresultinadditionaltransitionlosses
due to their larger junction capacitance.
IN
OUT
Synchronous Switch Duty Cycle =
V
IN
The MOSFET power dissipations at maximum output
current are given by:
C and C
Selection
IN
OUT
VOUT
2
The selection of C is simplified by the 2-phase architec-
PMAIN
=
I
1+ δ R
+
IN
(
MAX) (
)
DS(ON)
V
ture and its impact on the worst-case RMS current drawn
throughtheinputnetwork(battery/fuse/capacitor).Itcanbe
shown that the worst-case capacitor RMS current occurs
when only one controller is operating. The controller with
IN
⎛
⎞
⎟
⎠
2
IMAX
2
V
R
C
•
⎜
(
)
(
DR )(
)
IN
MILLER
⎝
⎡
⎢
⎣
⎤
1
1
the highest (V )(I ) product needs to be used in the
OUT OUT
+
f
( )
⎥
⎦
formula shown in Equation 1 to determine the maximum
RMS capacitor current requirement. Increasing the out-
put current drawn from the other controller will actually
decrease the input RMS ripple current from its maximum
value. The out-of-phase technique typically reduces the
input capacitor’s RMS ripple current by a factor of 30%
to 70% when compared to a single phase power supply
solution.
V
INTVCC – VTHMIN VTHMIN
V – VOUT
2
IN
P
=
I
1+ δ R
(
MAX) (
)
SYNC
DS(ON)
V
IN
where δ is the temperature dependency of R
and
DS(ON)
R
(approximately 2ꢁ) is the effective driver resistance
DR
at the MOSFET’s Miller threshold voltage. V
is the
THMIN
typical MOSFET minimum threshold voltage.
Incontinuousmode,thesourcecurrentofthetopMOSFET
is a square wave of duty cycle (V )/(V ). To prevent
2
BothMOSFETshaveI RlosseswhilethetopsideN-channel
equation includes an additional term for transition losses,
OUT
IN
large voltage transients, a low ESR capacitor sized for the
maximum RMS current of one channel must be used. The
maximum RMS capacitor current is given by:
which are highest at high input voltages. For V < 20V
IN
the high current efficiency generally improves with larger
MOSFETs, while for V > 20V the transition losses rapidly
IN
1/2
⎦
IMAX
⎡
⎤
increasetothepointthattheuseofahigherR
device
CIN Required IRMS
≈
V
V – V
(1)
DS(ON)
(
OUT )(
)
IN
OUT
⎣
V
IN
withlowerC
actuallyprovideshigherefficiency.The
MILLER
38581fd
18
LTC3858-1
APPLICATIONS INFORMATION
Equation 1 has a maximum at V = 2V , where I
where f is the operating frequency, C
is the output
IN
OUT
RMS
OUT
= I /2. This simple worst-case condition is commonly
capacitance and ∆I is the ripple current in the inductor.
OUT
L
usedfordesignbecauseevensignificantdeviationsdonot
offermuchrelief.Notethatcapacitormanufacturers’ripple
current ratings are often based on only 2000 hours of life.
This makes it advisable to further derate the capacitor, or
to choose a capacitor rated at a higher temperature than
required. Several capacitors may be paralleled to meet
size or height requirements in the design. Due to the high
operatingfrequencyoftheLTC3858-1, ceramiccapacitors
The output ripple is highest at maximum input voltage
since ∆I increases with input voltage.
L
Setting Output Voltage
The LTC3858-1 output voltages are each set by an exter-
nal feedback resistor divider carefully placed across the
output, as shown in Figure 6. The regulated output voltage
is determined by:
can also be used for C . Always consult the manufacturer
IN
⎛
⎞
⎟
⎠
if there is any question.
RB
RA
VOUT = 0.8V 1+
⎜
⎝
The benefit of the 2-phase operation can be calculated
by using Equation 1 for the higher power controller and
then calculating the loss that would have resulted if both
controller channels switched on at the same time. The
total RMS power lost is lower when both controllers are
operating due to the reduced overlap of current pulses
required through the input capacitor’s ESR. This is why
the input capacitor’s requirement calculated above for the
worst-case controller is adequate for the dual controller
design. Also, the input protection fuse resistance, battery
resistance, and PC board trace resistance losses are also
reduced due to the reduced peak currents in a 2-phase
system. The overall benefit of a multiphase design will
only be fully realized when the source impedance of the
power supply/battery is included in the efficiency testing.
The sources of the top MOSFETs should be placed within
To improve the frequency response, a feedforward ca-
pacitor, C , may be used. Great care should be taken to
FF
route the V line away from noise sources, such as the
FB
inductor or the SW line.
V
OUT
R
B
C
FF
1/2 LTC3858-1
V
FB
R
A
38581 F05
Figure 6. Setting Output Voltage
Soft-Start (SS Pins)
The start-up of each V
is controlled by the voltage on
OUT
1cmofeachotherandshareacommonC (s). Separating
IN
the respective SS pin. When the voltage on the SS pin
is less than the internal 0.8V reference, the LTC3858-1
the sources and C may produce undesirable voltage and
IN
current resonances at V .
IN
regulates the V pin voltage to the voltage on the SS pin
FB
A small (0.1μF to 1μF) bypass capacitor between the chip
instead of 0.8V. The SS pin can be used to program an
V
pin and ground, placed close to the LTC3858-1, is
IN
external soft-start function.
also suggested. A 10ꢁ resistor placed between C (C1)
IN
Soft-startisenabledbysimplyconnectingacapacitorfrom
the SS pin to ground, as shown in Figure 7. An internal
1μA current source charges the capacitor, providing a
and the V pin provides further isolation between the
two channels.
IN
The selection of C
is driven by the effective series
OUT
resistance (ESR). Typically, once the ESR requirement
1/2 LTC3858-1
SS
is satisfied, the capacitance is adequate for filtering. The
C
SS
output ripple (∆V ) is approximated by:
OUT
SGND
⎛
⎞
⎟
⎠
38581 F06
1
ΔVOUT ≈ ΔI ESR+
⎜
L
8 • f • COUT
⎝
Figure 7. Using the SS Pin to Program Soft-Start
38581fd
19
LTC3858-1
APPLICATIONS INFORMATION
linear ramping voltage at the SS pin. The LTC3858-1 will
To prevent the maximum junction temperature from be-
ing exceeded, the input supply current must be checked
while operating in forced continuous mode (PLLIN/MODE
regulate the V pin (and hence V ) according to the
FB
OUT
voltageontheSSpin, allowingV
torisesmoothlyfrom
OUT
0V to its final regulated value. The total soft-start time will
= INTV ) at maximum V .
CC
IN
be approximately:
When the voltage applied to EXTV rises above 4.7V, the
CC
0.8V
1μA
V LDO is turned off and the EXTV LDO is enabled. The
IN
CC
tSS = CSS
•
EXTV LDO remains on as long as the voltage applied to
CC
EXTV remains above 4.5V. The EXTV LDO attempts
CC
CC
INTV Regulators
to regulate the INTV voltage to 5.1V, so while EXTV
CC
CC
CC
CC
CC
is less than 5.1V, the LDO is in dropout and the INTV
The LTC3858-1 features two separate internal P-channel
low dropout linear regulators (LDO) that supply power
voltage is approximately equal to EXTV . When EXTV
CC
is greater than 5.1V, up to an absolute maximum of 14V,
at the INTV pin from either the V supply pin or the
CC
IN
INTV is regulated to 5.1V.
CC
EXTV pin depending on the connection of the EXTV
CC
CC
pin. INTV powers the gate drivers and much of the
Using the EXTVCC LDO allows the MOSFET driver and
control power to be derived from one of the switching
regulator outputs (4.7V ≤ VOUT ≤ 14V) during normal
operation and from the VIN LDO when the output is out
ofregulation(e.g.,start-up,short-circuit).Ifmorecurrent
is required through the EXTVCC LDO than is specified, an
externalSchottkydiodecanbeaddedbetweentheEXTVCC
and INTVCC pins. In this case, do not apply more than 6V
to the EXTVCC pin and make sure that EXTVCC ≤ VIN.
CC
internalcircuitry.TheV LDOandtheEXTV LDOregulate
IN
CC
INTV to 5.1V. Each of these can supply a peak current of
CC
50mA and must be bypassed to ground with a minimum
of 4.7μF low ESR capacitor. Regardless of what type of
bulkcapacitorisused, anadditional1μFceramiccapacitor
placed directly adjacent to the INTV and PGND IC pins is
CC
highlyrecommended.Goodbypassingisneededtosupply
the high transient currents required by the MOSFET gate
drivers and to prevent interaction between the channels.
Significant efficiency and thermal gains can be realized
High input voltage applications in which large MOSFETs
are being driven at high frequencies may cause the
maximum junction temperature rating for the LTC3858-1
by powering INTV from the output, since the V cur-
CC
IN
rent resulting from the driver and control currents will be
scaled by a factor of (Duty Cycle)/(Switcher Efficiency).
For 5V to 14V regulator outputs, this means connecting
to be exceeded. The INTV current, which is dominated
CC
by the gate charge current, may be supplied by either the
the EXTV pin directly to V . Tying the EXTV pin to
CC
OUT
CC
V
LDO or the EXTV LDO. When the voltage on the
a 8.5V supply reduces the junction temperature in the
IN
CC
EXTV pinislessthan4.7V,theV LDOisenabled.Power
previous example from 125°C to:
CC
IN
dissipation for the IC in this case is highest and is equal to
• I . The gate charge current is dependent on
T = 70°C + (15mA)(8.5V)(90°C/W) = 82°C
J
V
IN
INTVCC
However, for 3.3V and other low voltage outputs, addi-
operating frequency as discussed in the Efficiency
Considerations section. The junction temperature can be
estimated by using the equations given in Note 2 of the
Electrical Characteristics. For example, the LTC3858-1
tional circuitry is required to derive INTV power from
CC
the output.
The following list summarizes the four possible connec-
INTV current is limited to less than 15mA from a 40V
CC
tions for EXTV :
CC
supplywhennotusingtheEXTV supplyat70°Cambient
CC
temperature in the SSOP package:
T = 70°C + (15mA)(40V)(90°C/W) = 125°C
J
38581fd
20
LTC3858-1
APPLICATIONS INFORMATION
1. EXTV LeftOpen(orGrounded).ThiswillcauseINTV
on, the boost voltage is above the input supply: V
=
CC
CC
BOOST
to be powered from the internal 5.1V regulator result-
ing in an efficiency penalty of up to 10% at high input
voltages.
V + V
. The value of the boost capacitor, C , needs
IN
INTVCC
B
to be 100 times that of the total input capacitance of the
topsideMOSFET(s).Thereversebreakdownoftheexternal
Schottky diode must be greater than V
.
IN(MAX)
2. EXTV Connected Directly to V . This is the normal
CC
OUT
connection for a 5V to 14V regulator and provides the
When adjusting the gate drive level, the final arbiter is the
total input current for the regulator. If a change is made
and the input current decreases, then the efficiency has
improved. If there is no change in input current, then there
is no change in efficiency.
highest efficiency.
3. EXTVCC Connected to an External Supply. If an external
supply is available in the 5V to 14V range, it may be
used to power EXTVCC. Ensure that EXTVCC < VIN.
4. EXTV ConnectedtoanOutput-DerivedBoostNetwork.
Fault Conditions: Current Limit and Current Foldback
CC
For 3.3V and other low voltage regulators, efficiency
When the output current hits the current limit, the output
voltage begins to drop. If the output falls below 70% of its
nominal output level, then the maximum sense voltage is
progressively lowered to about one-half of its maximum
selected value. Under short-circuit conditions with very
low duty cycles, the LTC3858-1 will begin cycle skipping
in order to limit the short-circuit current. In this situation
the bottom MOSFET will be dissipating most of the power
but less than in normal operation. The short-circuit ripple
gains can still be realized by connecting EXTV to an
CC
output-derivedvoltagethathasbeenboostedtogreater
than 4.7V. This can be done with the capacitive charge
pump shown in Figure 8. Ensure that EXTV < V .
CC
IN
V
IN
C
IN
BAT85
BAT85
BAT85
V
IN
current is determined by the minimum on-time, t
,
ON(MIN)
MTOP
MBOT
of the LTC3858-1 (≈90ns), the input voltage and inductor
value:
VN2222LL
TG1
1/2 LTC3858-1
L
R
SENSE
⎛
⎜
⎝
⎞
⎟
⎠
V
EXTV
SW
OUT
CC
V
L
IN
ΔIL(SC) = tON(MIN)
C
D
BG1
OUT
The resulting average short-circuit current is:
38581 F08
PGND
50% •I
1
2
ISC
=
LIM(MAX) – ΔIL(SC)
Figure 8. Capacitive Charge Pump for EXTVCC
RSENSE
Fault Conditions: Overvoltage Protection (Crowbar)
Topside MOSFET Driver Supply (C , D )
B
B
The overvoltage crowbar is designed to blow a system
input fuse when the output voltage of the regulator rises
muchhigherthannominallevels.Thecrowbarcauseshuge
currents to flow, that blow the fuse to protect against a
shorted top MOSFET if the short occurs while the control-
ler is operating.
Externalbootstrapcapacitors,C ,connectedtotheBOOST
B
pinssupplythegatedrivevoltagesforthetopsideMOSFETs.
Capacitor C in the Functional Diagram is charged though
B
external diode D from INTV when the SW pin is low.
B
CC
When one of the topside MOSFETs is to be turned on, the
driver places the C voltage across the gate-source of the
B
desired MOSFET. This enhances the MOSFET and turns on
A comparator monitors the output for overvoltage condi-
tions. The comparator detects faults greater than 10%
the topside switch. The switch node voltage, SW, rises to
V and the BOOST pin follows. With the topside MOSFET
above the nominal output voltage. When this condition
IN
38581fd
21
LTC3858-1
APPLICATIONS INFORMATION
1000
900
800
700
600
500
400
300
200
100
0
is sensed, the top MOSFET is turned off and the bottom
MOSFET is turned on until the overvoltage condition is
cleared. The bottom MOSFET remains on continuously
for as long as the overvoltage condition persists; if V
OUT
returns to a safe level, normal operation automatically
resumes.
AshortedtopMOSFETwillresultinahighcurrentcondition
which will open the system fuse. The switching regulator
will regulate properly with a leaky top MOSFET by altering
the duty cycle to accommodate the leakage.
15 25 35 45 55 65 75 85 95 105 115 125
FREQ PIN RESISTOR (kꢁ)
38581 F09
Phase-Locked Loop and Frequency Synchronization
Figure 9. Relationship Between Oscillator Frequency
and Resistor Value at the FREQ Pin
The LTC3858-1 has an internal phase-locked loop (PLL)
comprised of a phase frequency detector, a lowpass filter,
and a voltage-controlled oscillator (VCO). This allows the
turn-on of the top MOSFET of controller 1 to be locked to
the rising edge of an external clock signal applied to the
PLLIN/MODEpin.Theturn-onofcontroller2’stopMOSFET
is thus 180 degrees out of phase with the external clock.
The phase detector is an edge sensitive digital type that
provides zero degrees phase shift between the external
and internal oscillators. This type of phase detector does
not exhibit false lock to harmonics of the external clock.
Typically, the external clock (on the PLLIN/MODE pin)
input high threshold is 1.6V, while the input low threshold
is 1.1V.
Rapid phase locking can be achieved by using the FREQ
pin to set a free-running frequency near the desired
synchronization frequency. The VCO’s input voltage is
prebiased at a frequency corresponding to the frequency
set by the FREQ pin. Once prebiased, the PLL only needs
to adjust the frequency slightly to achieve phase lock
and synchronization. Although it is not required that the
free-running frequency be near external clock frequency,
doingsowillpreventtheoperatingfrequencyfrompassing
through a large range of frequencies as the PLL locks.
If the external clock frequency is greater than the internal
oscillator’sfrequency,f ,thencurrentissourcedcontinu-
OSC
ously from the phase detector output, pulling up the VCO
input. When the external clock frequency is less than f
,
OSC
current is sunk continuously, pulling down the VCO input.
If the external and internal frequencies are the same but
exhibit a phase difference, the current sources turn on for
an amount of time corresponding to the phase difference.
The voltage at the VCO input is adjusted until the phase
and frequency of the internal and external oscillators are
identical. At the stable operating point, the phase detector
output is high impedance and the internal filter capacitor,
Table 2 summarizes the different states in which the FREQ
pin can be used.
Table 2
FREQ PIN
PLLIN/MODE PIN
DC Voltage
FREQUENCY
350kHz
0V
INTV
DC Voltage
535kHz
CC
Resistor
DC Voltage
50kHz–900kHz
C , holds the voltage at the VCO input.
LP
Any of the Above
External Clock
Phase–Locked to
External Clock
Note that the LTC3858-1 can only be synchronized to an
external clock whose frequency is within range of the
LTC3858-1’s internal VCO, which is nominally 55kHz
to 1MHz. This is guaranteed to be between 75kHz and
850kHz.
38581fd
22
LTC3858-1
APPLICATIONS INFORMATION
Minimum On-Time Considerations
1. The V current is the DC input supply current given
IN
in the Electrical Characteristics table, which excludes
Minimum on-time, t
, is the smallest time dura-
ON(MIN)
MOSFET driver and control currents. V current typi-
IN
tion that the LTC3858-1 is capable of turning on the top
MOSFET. It is determined by internal timing delays and the
gate charge required to turn on the top MOSFET. Low duty
cycle applications may approach this minimum on-time
limit and care should be taken to ensure that:
cally results in a small (<0.1%) loss.
2. INTV current is the sum of the MOSFET driver and
CC
control currents. The MOSFET driver current results
from switching the gate capacitance of the power
MOSFETs. Each time a MOSFET gate is switched from
low to high to low again, a packet of charge, dQ, moves
VOUT
tON(MIN)
<
V
f
IN( )
from INTV to ground. The resulting dQ/dt is a current
CC
out of INTV that is typically much larger than the
CC
If the duty cycle falls below what can be accommodated
by the minimum on-time, the controller will begin to skip
cycles. The output voltage will continue to be regulated,
but the ripple voltage and current will increase.
control circuit current. In continuous mode, I
GATECHG
= f(Q + Q ), where Q and Q are the gate charges of
T
B
T
B
the topside and bottom side MOSFETs.
SupplyingINTV fromanoutput-derivedpowersource
CC
Theminimumon-timefortheLTC3858-1isapproximately
95ns. However, as the peak sense voltage decreases the
minimum on-time gradually increases up to about 130ns.
This is of particular concern in forced continuous applica-
tions with low ripple current at light loads. If the duty cycle
drops below the minimum on-time limit in this situation,
a significant amount of cycle skipping can occur with cor-
respondingly larger current and voltage ripple.
through EXTV will scale the V current required
CC
IN
for the driver and control circuits by a factor of (Duty
Cycle)/(Efficiency). Forexample, ina20Vto5Vapplica-
tion, 10mA of INTV current results in approximately
CC
2.5mA of V current. This reduces the midcurrent loss
IN
from 10% or more (if the driver was powered directly
from V ) to only a few percent.
IN
2
3. I R losses are predicted from the DC resistances of the
fuse (if used), MOSFET, inductor, current sense resis-
tor, and input and output capacitor ESR. In continuous
mode the average output current flows through L and
Efficiency Considerations
The percent efficiency of a switching regulator is equal to
the output power divided by the input power times 100%.
It is often useful to analyze individual losses to determine
what is limiting the efficiency and which change would
produce the most improvement. Percent efficiency can
be expressed as:
R
, but is “chopped” between the topside MOSFET
SENSE
andthesynchronousMOSFET.IfthetwoMOSFETshave
approximately the same R
, then the resistance
DS(ON)
of one MOSFET can simply be summed with the resis-
2
tances of L, R
and ESR to obtain I R losses. For
= 30mꢁ, R = 50mꢁ, R
SENSE
example, if each R
%Efficiency = 100% – (L1 + L2 + L3 + ...)
DS(ON)
L
SENSE
= 10mꢁ and R
= 40mꢁ (sum of both input and
ESR
whereL1, L2, etc. aretheindividuallossesasapercentage
of input power.
output capacitance losses), then the total resistance
is 130mꢁ. This results in losses ranging from 3% to
13% as the output current increases from 1A to 5A for
a 5V output, or a 4% to 20% loss for a 3.3V output.
Although all dissipative elements in the circuit produce
losses, four main sources usually account for most of
the losses in LTC3858-1 circuits: 1) IC V current, 2)
Efficiency varies as the inverse square of V
for the
IN
OUT
2
INTV regulatorcurrent,3)I Rlosses,4)topsideMOSFET
sameexternalcomponentsandoutputpowerlevel. The
combined effects of increasingly lower output voltages
andhighercurrentsrequiredbyhighperformancedigital
systemsisnotdoublingbutquadruplingtheimportance
of loss terms in the switching regulator system!
CC
transition losses.
38581fd
23
LTC3858-1
APPLICATIONS INFORMATION
4. Transition losses apply only to the topside MOSFET(s),
and become significant only when operating at high
input voltages (typically 15V or greater). Transition
losses can be estimated from:
be estimated by examining the rise time at the pin. The
ITH external components shown in Figure 12 circuit will
provide an adequate starting point for most applications.
The I series R -C filter sets the dominant pole-zero
TH
C
C
Transition Loss = (1.7) • V • 2 • I
• C • f
RSS
loop compensation. The values can be modified slightly
(from 0.5 to 2 times their suggested values) to optimize
transient response once the final PC layout is done and
the particular output capacitor type and value have been
determined. The output capacitors need to be selected
because the various types and values determine the loop
gain and phase. An output current pulse of 20% to 80%
of full-load current having a rise time of 1μs to 10μs will
IN
O(MAX)
Other“hidden”lossessuchascoppertraceandinternal
battery resistances can account for an additional 5% to
10% efficiency degradation in portable systems. It is
very important to include these “system” level losses
during the design phase. The internal battery and fuse
resistancelossescanbeminimizedbymakingsurethat
C has adequate charge storage and very low ESR at
IN
produce output voltage and I pin waveforms that will
TH
the switching frequency. A 25W supply will typically
require a minimum of 20μF to 40μF of capacitance
having a maximum of 20mꢁ to 50mꢁ of ESR. The
LTC3858-1 2-phase architecture typically halves this
input capacitance requirement over competing solu-
tions.OtherlossesincludingSchottkyconductionlosses
during dead-time and inductor core losses generally
account for less than 2% total additional loss.
give a sense of the overall loop stability without breaking
the feedback loop.
Placing a resistive load and a power MOSFET directly
across the output capacitor and driving the gate with an
appropriate signal generator is a practical way to produce
a realistic load step condition. The initial output voltage
step resulting from the step change in output current may
not be within the bandwidth of the feedback loop, so this
signal cannot be used to determine phase margin. This
Checking Transient Response
is why it is better to look at the I pin signal which is in
TH
The regulator loop response can be checked by looking at
the load current transient response. Switching regulators
take several cycles to respond to a step in DC (resistive)
load current. When a load step occurs, VOUT shifts by an
amount equal to ∆ILOAD (ESR), where ESR is the effective
seriesresistanceofCOUT. ∆ILOAD alsobeginstochargeor
discharge COUT generating the feedback error signal that
forces the regulator to adapt to the current change and
return VOUT to its steady-state value. During this recovery
time VOUT can be monitored for excessive overshoot or
ringing, which would indicate a stability problem. OPTI-
LOOP compensation allows the transient response to be
optimized over a wide range of output capacitance and
ESR values. The availability of the ITH pin not only allows
optimization of control loop behavior, but it also provides
a DC coupled and AC filtered closed-loop response test
point. The DC step, rise time and settling at this test
point truly reflects the closed-loop response. Assuming
apredominantlysecondordersystem,phasemarginand/
or damping factor can be estimated using the percentage
of overshoot seen at this pin. The bandwidth can also
the feedback loop and is the filtered and compensated
control loop response.
The gain of the loop will be increased by increasing R
C
and the bandwidth of the loop will be increased by de-
creasing C . If R is increased by the same factor that C
C
C
C
is decreased, the zero frequency will be kept the same,
thereby keeping the phase shift the same in the most
critical frequency range of the feedback loop. The output
voltage settling behavior is related to the stability of the
closed-loopsystemandwilldemonstratetheactualoverall
supply performance.
A second, more severe transient is caused by switching
in loads with large (>1μF) supply bypass capacitors. The
dischargedbypasscapacitorsareeffectivelyputinparallel
with C , causing a rapid drop in V . No regulator can
OUT
OUT
alter its delivery of current quickly enough to prevent this
sudden step change in output voltage if the load switch
resistance is low and it is driven quickly. If the ratio of
C
to C
is greater than 1:50, the switch rise time
LOAD
OUT
38581fd
24
LTC3858-1
APPLICATIONS INFORMATION
should be controlled so that the load rise time is limited
estimated. Choosing a Fairchild FDS6982S dual MOSFET
to approximately 25 • C
. Thus a 10μF capacitor would
results in: R
= 0.035ꢁ/0.022ꢁ, C
= 215pF. At
LOAD
DS(ON)
MILLER
require a 250μs rise time, limiting the charging current
to about 200mA.
maximum input voltage with T(estimated) = 50°C:
3.3V
22V
2
⎡
⎤
PMAIN
=
6A 1+ 0.005 50°C – 25°C
(
)
(
)(
)
⎣
⎦
Design Example
2 6A
As a design example for one channel, assume V
=
0.035Ω + 22V
2.5Ω 215pF •
(
) (
)
1
(
)(
)
IN
= 6A,
2
12V(nominal), V = 22V (max), V
= 3.3V, I
IN
OUT
MAX
⎡
⎤
1
V
= 50mV and f = 350kHz.
SENSE(MAX)
+
350kHz = 433mW
(
)
⎢
⎣
⎥
5V – 2.3V 2.3V
⎦
Theinductancevalueischosenfirstbasedona30%ripple
current assumption. The highest value of ripple current
occurs at the maximum input voltage. Tie the FREQ pin
to GND, generating 350kHz operation. The minimum
inductance for 30% ripple current is:
A short-circuit to ground will result in a folded back cur-
rent of:
⎛
⎞
95ns 22V
(
)
25mV
0.006Ω 2
1
ISC
=
–
= 3.9A
⎜
⎟
3.9μH
⎛
⎜
⎝
⎞
⎟
⎠
⎝
⎠
VOUT
f L
( )( )
VOUT
ΔIL =
1–
V
IN
with a typical value of R
and δ = (0.005/°C)(25°C)
DS(ON)
= 0.125. The resulting power dissipated in the bottom
A 3.9μH inductor will produce 29% ripple current. The
peak inductor current will be the maximum DC value plus
one half the ripple current, or 6.88A. Increasing the ripple
current will also help ensure that the minimum on-time
of 95ns is not violated. The minimum on-time occurs at
MOSFET is:
2
P
= 3.9A 1.125 0.022Ω = 376mW
(
) (
)(
)
SYNC
which is less than full-load conditions.
maximum V :
IN
C is chosen for an RMS current rating of at least 3A at
IN
VOUT
3.3V
temperature assuming only this channel is on. C
is
tON(MIN)
=
=
= 429ns
OUT
V
f
22V 350kHz
IN ( )
(
)
chosen with an ESR of 0.02ꢁ for low output ripple volt-
age. The output ripple in continuous mode will be highest
at the maximum input voltage. The output voltage ripple
due to ESR is approximately:
The equivalent R
resistor value can be calculated by
SENSE
using the minimum value for the maximum current sense
threshold (43mV):
V
= R (∆I ) = 0.02ꢁ(1.75A) = 35mV
ESR L P-P
ORIPPLE
43mV
6.88A
RSENSE
≤
= 0.006Ω
PC Board Layout Checklist
Choosing0.5%resistors:R =24.9kandR =77.7kyields
A
B
an output voltage of 3.296V.
ThepowerdissipationonthetopsideMOSFETcanbeeasily
38581fd
25
LTC3858-1
APPLICATIONS INFORMATION
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of
the IC. These items are also illustrated graphically in the
layoutdiagramofFigure10.Figure11illustratesthecurrent
waveforms present in the various branches of the 2-phase
synchronousregulatorsoperatinginthecontinuousmode.
Check the following in your layout:
from sensitive small-signal nodes, especially from the
opposites channel’s voltage and current sensing feed-
back pins. All of these nodes have very large and fast
moving signals and therefore should be kept on the
“output side” of the LTC3858-1 and occupy minimum
PC trace area.
7. Use a modified “star ground” technique: a low imped-
ance, large copper area central grounding point on
the same side of the PC board as the input and output
1. Are the top N-channel MOSFETs MTOP1 and MTOP2
located within 1cm of each other with a common drain
connection at C ? Do not attempt to split the input
capacitors with tie-ins for the bottom of the INTV
IN
CC
decoupling for the two channels as it can cause a large
decouplingcapacitor,thebottomofthevoltagefeedback
resistive divider and the SGND pin of the IC.
resonant loop.
2. Are the signal and power grounds kept separate? The
combined IC signal ground pin and the ground return
PC Board Layout Debugging
Start with one controller on at a time. It is helpful to use
a DC-50MHz current probe to monitor the current in the
inductor while testing the circuit. Monitor the output
switching node (SW pin) to synchronize the oscilloscope
totheinternaloscillatorandprobetheactualoutputvoltage
as well. Check for proper performance over the operating
voltage and current range expected in the application. The
frequencyofoperationshouldbemaintainedovertheinput
voltage range down to dropout and until the output load
drops below the low current operation threshold—typi-
cally 10% of the maximum designed current level in Burst
Mode operation.
of C
must return to the combined C
(–) ter-
INTVCC
OUT
minals. The path formed by the top N-channel MOSFET,
Schottky diode and the C capacitor should have short
IN
leads and PC trace lengths. The output capacitor (–)
terminals should be connected as close as possible
to the (–) terminals of the input capacitor by placing
the capacitors next to each other and away from the
Schottky loop described above.
3. Do the LTC3858-1 V pins’ resistive dividers connect
FB
to the (+) terminals of C ? The resistive divider
OUT
must be connected between the (+) terminal of C
OUT
and signal ground. The feedback resistor connections
should not be along the high current input feeds from
the input capacitor(s).
Thedutycyclepercentageshouldbemaintainedfromcycle
tocycleinawell-designed,lownoisePCBimplementation.
Variation in the duty cycle at a subharmonic rate can sug-
gest noise pickup at the current or voltage sensing inputs
or inadequate loop compensation. Overcompensation of
the loop can be used to tame a poor PC layout if regula-
tor bandwidth optimization is not required. Only after
each controller is checked for its individual performance
should both controllers be turned on at the same time.
A particularly difficult region of operation is when one
controller channel is nearing its current comparator trip
pointwhentheotherchannelisturningonitstopMOSFET.
This occurs around 50% duty cycle on either channel due
to the phasing of the internal clocks and may cause minor
duty cycle jitter.
–
+
4. Are the SENSE and SENSE leads routed together with
minimumPCtracespacing?Thefiltercapacitorbetween
+
–
SENSE and SENSE should be as close as possible
to the IC. Ensure accurate current sensing with Kelvin
connections at the SENSE resistor.
5. Is the INTV decoupling capacitor connected close
CC
to the IC, between the INTV and the power ground
CC
pins? This capacitor carries the MOSFET drivers’ cur-
rent peaks. An additional 1μF ceramic capacitor placed
immediatelynexttotheINTV andPGNDpinscanhelp
CC
improve noise performance substantially.
6. Keep the switching nodes (SW1, SW2), top gate nodes
(TG1, TG2), andboostnodes(BOOST1, BOOST2)away
38581fd
26
LTC3858-1
APPLICATIONS INFORMATION
SS1
LTC3858-1
I
R
TH1
PU1
V
PULL-UP
(<6V)
V
PGOOD1
TG1
PGOOD1
FB1
L1
R
SENSE
D1
+
–
V
SENSE1
SENSE1
FREQ
OUT1
SW1
C
B1
M1
M2
BOOST1
BG1
C
C
OUT1
V
f
IN
1μF
IN
PLLIN/MODE
RUN1
R
C
IN
VIN
CERAMIC
PGND
GND
RUN2
EXTV
CC
V
OUT1
C
IN
C
SGND
INTVCC
V
IN
–
INTV
CC
SENSE2
OUT2
D2
1μF
CERAMIC
+
BG2
SENSE2
M4
M3
BOOST2
V
FB2
TH2
C
B2
SW2
TG2
I
R
SENSE
V
OUT2
SS2
L2
38581 F10
Figure 10. Recommended Printed Circuit Layout Diagram
Reduce V from its nominal level to verify operation
and current pins. The capacitor placed across the current
sensing pins needs to be placed immediately adjacent to
the pins of the IC. This capacitor helps to minimize the
effects of differential noise injection due to high frequency
capacitive coupling. If problems are encountered with
high current output loading at lower input voltages, look
IN
of the regulator in dropout. Check the operation of the
undervoltage lockout circuit by further lowering V while
IN
monitoring the outputs to verify operation.
Investigate whether any problems exist only at higher out-
put currents or only at higher input voltages. If problems
coincide with high input voltages and low output currents,
look for capacitive coupling between the BOOST, SW, TG,
and possibly BG connections and the sensitive voltage
for inductive coupling between C , Schottky and the top
IN
MOSFET components to the sensitive current and voltage
sensing traces. In addition, investigate common ground
38581fd
27
LTC3858-1
APPLICATIONS INFORMATION
SW1
L1
R
SENSE1
V
OUT1
D1
C
R
L1
OUT1
V
IN
R
IN
C
IN
SW2
L2
R
SENSE2
V
OUT2
D2
C
R
L2
OUT2
BOLD LINES INDICATE
HIGH SWITCHING
CURRENT. KEEP LINES
TO A MINIMUM LENGTH.
38581 F11
Figure 11. Branch Current Waveforms
path voltage pickup between these components and the
SGND pin of the IC.
be much more sensitive to component selection. This
behavior can be investigated by temporarily shorting out
the current sensing resistor—don’t worry, the regulator
will still maintain control of the output voltage.
An embarrassing problem, which can be missed in an
otherwise properly working switching regulator, results
when the current sensing leads are hooked up backwards.
The output voltage under this improper hookup will still
be maintained but the advantages of current mode control
will not be realized. Compensation of the voltage loop will
38581fd
28
LTC3858-1
TYPICAL APPLICATIONS
R
B1
215k
LTC3858-1
+
C
SENSE1
F1
INTV
CC
C1
1nF
15pF
100k
–
R
A1
68.1k
SENSE1
PGOOD1
BG1
L1
MBOT1
MTOP1
V
FB1
3.3μH
V
3.3V
5A
OUT1
C
ITH1A
150pF
SW1
R
C
C
SENSE1
7mꢁ
OUT1
B1
0.47μF
BOOST1
TG1
150μF
R
15k
SS1
ITH1
I
TH1
D1
D2
C
820pF
ITH1
C
0.1μF
V
IN
V
IN
9V TO 38V
C
IN
22μF
SS1
INTV
CC
C
INT
4.7μF
PGND
PLLIN/MODE
SGND
MTOP2
MBOT2
EXTV
TG2
CC
RUN1
RUN2
FREQ
C
B2
0.47μF
BOOST2
L2
7.2μH
R
SENSE2
10mꢁ
C
0.1μF
SS2
V
8.5V
3A
OUT2
SW2
BG2
SS2
C
C
ITH2
680pF
OUT2
R
27k
150μF
ITH2
I
TH2
C
100pF
C2
ITH2A
V
FB2
R
A2
44.2k
–
+
SENSE2
C
1nF
F2
39pF
SENSE2
R
B2
442k
38581 F12
C
, C : SANYO 10TPD150M
OUT1 OUT2
L1: SUMIDA CDEP105-3R2M
L2: SUMIDA CDEP105-7R2M
MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP
Start-Up
SW Node Waveforms
Efficiency vs Output Current
100
90
V
80
OUT2
V
= 8.5V
V
= 3.3V
OUT
2V/DIV
OUT
70
SW1
5V/DIV
60
50
V
OUT1
2V/DIV
40
30
20
10
0
SW2
5V/DIV
V
= 12V
IN
Burst Mode OPERATION
0.1 10
OUTPUT CURRENT (A)
3858 F12c
3858 F12d
20ms/DIV
1μs/DIV
0.000010.0001 0.001 0.01
1
38581 F12b
Figure 12. High Efficiency Dual 8.5V/3.3V Step-Down Converter
38581fd
29
LTC3858-1
TYPICAL APPLICATIONS
High Efficiency Dual 2.5V/3.3V Step-Down Converter
R
B1
143k
LTC3858-1
+
C
SENSE1
INTV
CC
F1
C1
1nF
22pF
100k
–
R
A1
SENSE1
PGOOD1
BG1
68.1k
L1
2.4μH
MBOT1
MTOP1
V
FB1
V
2.5V
5A
OUT1
C
100pF
ITH1A
SW1
R
C
C
SENSE1
7mꢁ
OUT1
B1
BOOST1
TG1
150μF
0.47μF
R
ITH1
22k
I
TH1
D1
D2
C
820pF
ITH1
C
0.01μF
SS1
V
IN
V
IN
4V TO 38V
C
IN
SS1
22μF
INTV
CC
C
INT
4.7μF
PGND
PLLIN/MODE
SGND
MTOP2
MBOT2
EXTV
TG2
CC
RUN1
RUN2
FREQ
C
B2
BOOST2
0.47μF
L2
3.2μH
R
SENSE2
7mꢁ
C
0.01μF
SS2
V
3.3V
5A
OUT2
SW2
BG2
SS2
C
C
820pF
OUT2
ITH2
R
15k
150μF
ITH2
I
TH2
C
150pF
C2
ITH2A
V
FB2
R
A2
–
+
SENSE2
68.1k
C
1nF
F2
15pF
SENSE2
R
B2
215k
38581 F13
C
, C
: SANYO 10TPD150M
OUT1 OUT2
L1: SUMIDA CDEP105-2R5
L2: SUMIDA CDEP105-3R2M
MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP
38581fd
30
LTC3858-1
TYPICAL APPLICATIONS
High Efficiency Dual 12V/5V Step-Down Converter
R
B1
422k
+
C
SENSE1
INTV
F1
CC
C1
1nF
33pF
100k
–
R
A1
SENSE1
PGOOD1
BG1
30.1k
L1
8.8μH
MBOT1
MTOP1
V
FB1
V
12V
3A
OUT1
C
100pF
ITH1A
SW1
R
C
C
SENSE1
OUT1
B1
BOOST1
TG1
10mꢁ
47μF
0.47μF
R
33k
ITH1
I
TH1
D1
D2
C
0.01μF
SS1
LTC3858-1
C
680pF
ITH1
V
IN
V
SS1
IN
12.5V TO 38V
C
IN
INTV
CC
C
22μF
INT
4.7μF
PGND
PLLIN/MODE
SGND
MTOP2
MBOT2
EXTV
TG2
CC
RUN1
RUN2
FREQ
R
C
FREQ
B2
BOOST2
60k
0.47μF
L2
4.3μH
R
SENSE2
7mꢁ
C
0.01μF
SS2
V
OUT2
5V
SW2
BG2
SS2
5.5A
C
C
680pF
OUT2
ITH2
R
17k
150μF
ITH2
I
TH2
C
100pF
C2
ITH2A
V
FB2
C
: KEMET T525D476M016E035
: SANYO 10TPD150M
R
OUT1
OUT2
A2
–
+
SENSE2
C
75k
L1: SUMIDA CDEP105-8R8M
L2: SUMIDA CDEP105-4R3M
MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP
C
1nF
F2
15pF
SENSE2
R
B2
393k
38581 TA02a
38581fd
31
LTC3858-1
TYPICAL APPLICATIONS
High Efficiency Dual 24V/5V Step-Down Converter
R
B1
487k
+
C
SENSE1
INTV
F1
CC
C1
1nF
18pF
100k
–
R
A1
SENSE1
PGOOD1
BG1
16.9k
L1
22μH
MBOT1
MTOP1
V
FB1
V
24V
1A
OUT1
C
100pF
ITH1A
SW1
R
C
C
SENSE1
OUT1
B1
BOOST1
TG1
25mꢁ
22μF
25V
×2
0.47μF
R
46k
ITH1
I
TH1
D1
D2
C
0.01μF
SS1
CERAMIC
LTC3858-1
C
680pF
ITH1
V
IN
V
SS1
IN
24.5V TO 38V
C
IN
INTV
CC
C
4.7μF
22μF
INT
PGND
PLLIN/MODE
SGND
MTOP2
MBOT2
EXTV
TG2
CC
RUN1
RUN2
FREQ
R
C
FREQ
B2
BOOST2
60k
0.47μF
L2
4.3μH
R
SENSE2
7mꢁ
C
0.01μF
SS2
V
5V
5A
OUT2
SW2
BG2
SS2
C
C
680pF
OUT2
ITH2
R
17k
150μF
ITH2
I
TH2
C
100pF
C2
ITH2A
V
FB2
R
A2
–
+
SENSE2
75k
C
: SANYO 10TPD150M
OUT2
L1: SUMIDA CDRH105R-220M
L2: SUMIDA CDEP105-4R3M
C
1nF
F2
15pF
SENSE2
MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP
R
B2
392k
38581 TA04
38581fd
32
LTC3858-1
TYPICAL APPLICATIONS
High Efficiency Dual 1V/1.2V Step-Down Converter
R
B1
28.7k
+
C
SENSE1
F1
INTV
CC
C1
1nF
56pF
100k
–
R
A1
SENSE1
PGOOD1
BG1
115k
L1
0.47μH
MBOT1
MTOP1
V
FB1
V
OUT1
C
220pF
ITH1A
1V
SW1
C
R
OUT1 8A
C
SENSE1
4mꢁ
B1
BOOST1
TG1
220μF
0.47μF
R
ITH1
3.93k
×2
I
TH1
D1
D2
LTC3858-1
C
1000pF
ITH1
C
0.01μF
SS1
V
IN
V
IN
12V
C
IN
SS1
22μF
INTV
CC
C
INT
4.7μF
PGND
PLLIN/MODE
SGND
MTOP2
MBOT2
EXTV
TG2
CC
RUN1
RUN2
FREQ
R
C
FREQ
B2
BOOST2
60k
0.47μF
L2
0.47μH
R
SENSE2
4mꢁ
C
0.01μF
SS2
V
OUT2
1.2V
SW2
BG2
SS2
C
OUT2 8A
C
1000pF
ITH2
220μF
R
3.43k
ITH2
×2
I
TH2
C
220pF
C2
ITH2A
V
FB2
R
C
, C
: SANYO 2RSTPE220M
A2
OUT1 OUT2
–
+
SENSE2
115k
L1: SUMIDA CDEP105-3R2M
L2: SUMIDA CDEP105-7R2M
MTOP1, MTOP2: RENESAS RJK0305
MBOT1, MBOT2: RENESAS RJK0328
C
1nF
F2
56pF
SENSE2
R
B2
38581 TA03a
57.6k
38581fd
33
LTC3858-1
TYPICAL APPLICATIONS
High Efficiency Dual 1V/1.2V Step-Down Converter with Inductor DCR Current Sensing
R
R
1.18k
B1
S1
28.7k
+
C
SENSE1
SENSE1
F1
INTV
CC
C1
0.1μF
56pF
100k
–
R
A1
PGOOD1
115k
L1
0.47μH
MBOT1
MTOP1
V
BG1
SW1
FB1
V
OUT1
C
200pF
ITH1A
1V
C
OUT1 8A
C
B1
BOOST1
TG1
220μF
0.47μF
R
3.93k
ITH1
×2
I
TH1
D1
D2
LTC3858-1
C
1000pF
ITH1
C
SS1
0.01μF
V
IN
V
IN
12V
C
IN
SS1
22μF
INTV
CC
C
INT
4.7μF
PGND
PLLIN/MODE
SGND
MTOP2
MBOT2
EXTV
TG2
CC
RUN1
RUN2
FREQ
R
C
FREQ
B2
BOOST2
65k
0.47μF
L2
0.47μH
C
0.01μF
SS2
V
OUT2
1.2V
SW2
BG2
SS2
C
OUT2 8A
C
1000pF
ITH2
220μF
R
3.93k
ITH2
×2
I
TH2
C
220pF
C2
ITH2A
V
FB2
R
A2
–
+
SENSE2
115k
C
, C
: SANYO 2R5TPE220M
OUT1 OUT2
L1, L2: SUMIDA IHL P2525CZERR47M06
MTOP1, MTOP2: RENESAS RJK0305
MBOT1, MBOT2: RENESAS RJK0328
C
0.1μF
F2
56pF
SENSE2
R
1.18k
S2
R
B2
57.6k
38581 TA05
38581fd
34
LTC3858-1
PACKAGE DESCRIPTION
UFD Package
28-Lead Plastic QFN (4mm × 5mm)
(Reference LTC DWG # 05-08-1712 Rev B)
0.70 p0.05
4.50 p 0.05
3.10 p 0.05
2.50 REF
2.65 p 0.05
3.65 p 0.05
PACKAGE
OUTLINE
0.25 p0.05
0.50 BSC
3.50 REF
4.10 p 0.05
5.50 p 0.05
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
PIN 1 NOTCH
R = 0.20 OR 0.35
s 45o CHAMFER
2.50 REF
R = 0.115
TYP
R = 0.05
TYP
0.75 p 0.05
4.00 p 0.10
(2 SIDES)
27
28
0.40 p 0.10
PIN 1
TOP MARK
(NOTE 6)
1
2
5.00 p 0.10
(2 SIDES)
3.50 REF
3.65 p 0.10
2.65 p 0.10
(UFD28) QFN 0506 REV B
0.25 p 0.05
0.50 BSC
0.200 REF
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WXXX-X).
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
38581fd
35
LTC3858-1
PACKAGE DESCRIPTION
GN Package
28-Lead Plastic SSOP (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1641)
.386 – .393*
(9.804 – 9.982)
.045 p.005
.033
(0.838)
REF
28 27 26 25 24 23 22 21 20 19 18 17 1615
.254 MIN
.150 – .165
.229 – .244
.150 – .157**
(5.817 – 6.198)
(3.810 – 3.988)
.0165 p.0015
.0250 BSC
1
2
3
4
5
6
7
8
9 10 11 12 13 14
RECOMMENDED SOLDER PAD LAYOUT
.015 p .004
(0.38 p 0.10)
.0532 – .0688
(1.35 – 1.75)
s 45o
.004 – .0098
(0.102 – 0.249)
.0075 – .0098
(0.19 – 0.25)
0o – 8o TYP
.016 – .050
(0.406 – 1.270)
.008 – .012
.0250
(0.635)
BSC
GN28 (SSOP) 0204
(0.203 – 0.305)
TYP
NOTE:
1. CONTROLLING DIMENSION: INCHES
INCHES
2. DIMENSIONS ARE IN
(MILLIMETERS)
3. DRAWING NOT TO SCALE
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
38581fd
36
LTC3858-1
REVISION HISTORY (Revision history begins at Rev B)
REV
DATE
DESCRIPTION
PAGE NUMBER
B
11/09 Change to Absolute Maximum Ratings
Change to Electrical Characteristics
Change to Typical Performance Characteristics
Change to Pin Functions
2
3, 4
6
8, 9
Text Changes to Operation Section
Text Changes to Applications Information Section
Change to Table 2
11, 12, 13
20, 21, 22, 23, 25
22
Change to Figure 10
27
Changes to Related Parts
38
C
D
08/10 Changes to Electrical Characteristics
Added Typical Application to Back Page and Updated Related Parts
12/10 Changes to Electrical Characteristics
Changes to Pin Functions
3, 4
38
3
8, 9
Changes to Functional Diagram
10
Changes to Typical Applications
29 to 34, 38
38581fd
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
37
LTC3858-1
TYPICAL APPLICATION
High Efficiency 2-Phase 12V/150W Step-Down Converter
R
B1
698k
+
–
C
SENSE1
SENSE1
F1
INTV
CC
C1
1nF
10pF
100k
R
A1
PGOOD1
BG1
49.9k
L1
6μH
10μF
16V
MBOT1
MTOP1
V
FB1
V
OUT1
C
68pF
ITH1A
12V
SW1
C
R
OUT1
12.5A
C
SENSE1
5mꢁ
B1
BOOST1
TG1
22μF
16V
0.47μF
R
2.94k
ITH1
I
TH1
D1
D2
LTC3858-1
C
3300pF
ITH1
C
0.1μF
SS1
V
IN
V
IN
19V TO 28V
C
10μF
50V
IN
SS1
10μF
50V
INTV
CC
C
INT
4.7μF
PGND
TG2
PLLIN/MODE
SGND
MTOP2
MBOT2
V
EXTV
OUT
SS1
CC
RUN1
RUN2
FREQ
SS2
C
B2
L2
6μH
BOOST2
SW2
R
SENSE2
5mꢁ
0.47μF
C
OUT2
10μF
16V
22μF
16V
I
BG2
I
TH2
TH1
V
V
FB1
FB2
–
+
SENSE2
C
, C
: SANYO 16TQC22M
OUT1 OUT2
C2
1nF
L1, L2: SUMIDA CDEP106-6ROM
MTOP1, MTOP2: INFINEON BSZ097N04LS
MBOT1, MBOT2: INFINEON BSZ097N04LS
SENSE2
38581 TA06
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC3859
Low I , Triple Output Buck/Buck/Boost Synchronous Outputs (≥5V) Remain in Regulation Through Cold Crank 2.5V ≤ V ≤ 38V,
Q
IN
DC/DC Controller
V
Up to 24V, V
Up to 60V, I = 55μA,
OUT(BUCKS)
OUT(BOOST) Q
LTC3868/LTC3868-1 Low I , Dual Output 2-Phase Synchronous Step-
Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz,
4V ≤ V ≤ 24V, 0.8V ≤ V ≤ 14V, I = 170μA
Q
Down DC/DC Controllers with 99% Duty Cycle
IN
OUT
Q
LTC3857/LTC3857-1 Low I , Dual Output 2-Phase Synchronous Step-
Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz,
4V≤ V ≤ 38V, 0.8V ≤ V ≤ 24V, I = 50μA,
Q
Down DC/DC Controllers with 99% Duty Cycle
IN
OUT
Q
LTC3890/LTC3890-1 60V, Low I , Dual 2-Phase Synchronous Step-Down Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz,
Q
DC/DC Controller with 99% Duty Cycle
4V ≤ V ≤ 60V, 0.8V ≤ V
≤ 24V, I = 50μA,
OUT Q
IN
LTC3834/LTC3834-1 Low I , Synchronous Step-Down DC/DC Controllers Phase-Lockable Fixed Operating Frequency 140kHz to 650kHz,
Q
4V ≤ V ≤ 36V, 0.8V ≤ V
≤ 10V, I = 30μA,
Q
IN
OUT
LTC3835/LTC3835-1 Low I , Synchronous Step-Down DC/DC Controllers Phase-Lockable Fixed Operating Frequency 140kHz to 650kHz,
Q
4V ≤ V ≤ 36V, 0.8V ≤ V
≤ 10V, I = 80μA,
Q
IN
OUT
LT3845A
LTC3824
Low I , High Voltage Synchronous Step-Down
Adjustable Fixed Operating Frequency 100kHz to 500kHz, 4V ≤ V ≤ 60V,
IN
Q
DC/DC Controller
1.23V ≤ V
≤ 36V, I = 120μA, TSSOP-16
OUT Q
Low I , High Voltage DC/DC Controller, 100% Duty
Selectable Fixed 200kHz to 600kHz Operating Frequency 4V ≤ V ≤ 60V,
IN
Q
Cycle
0.8V ≤ V
≤ V , I = 40μA, MSOP-10E
OUT IN Q
38581fd
LT 1210 REV D • PRINTED IN USA
38 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
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