LTC5532ES6 [Linear]
300MHz to 7GHz Precision RF Power Detector with Gain and Offset Adjustment; 300MHz至7GHz的精准RF功率检测器具有增益与失调调节
| 型号： | LTC5532ES6 |
| 厂家： | 
Linear |
| 描述： | 300MHz to 7GHz Precision RF Power Detector with Gain and Offset Adjustment |
| 文件： | 总12页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Final Electrical Specifications
LTC5532
300MHz to 7GHz
Precision RF Power Detector
with Gain and Offset Adjustment
August 2003
U
FEATURES
DESCRIPTIO
The LTC®5532 is an RF power detector for RF applications
operating in the 300MHz to 7GHz range. A temperature
■
Temperature Compensated Internal Schottky
Diode RF Detector
■
Wide Input Frequency Range: 300MHz to 7GHz
Wide Input Power Range: –32dBm to 8dBm
Buffered Detector Output with External Gain Control
Precision VOUT Offset Control
Low Offset Voltage: 120mV ±35mV for Gain = 2x
Wide VCC Range of 2.7V to 6V
compensated Schottky diode peak detector and buffer
amplifier are combined in a small ThinSOTTM package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
■
■
■
■
■
■
■
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the VOUT pin.
Low Operating Current: 500µA
Available in a Low Profile (1mm) SOT-23 Package
The LTC5532 output buffer gain is set via external resis-
tors. The initial offset voltage of 120mV ±35mV can be
precisely adjusted using the VOS pin.
U
APPLICATIO S
■
802.11a, 802.11b, 802.11g, 802.15
The LTC5532 operates with input power levels from
–32dBm to 8dBm.
■
Multimode Mobile Phone Products
■
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
■
■
■
■
U
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3600
V
T
= 3.6V
CC
A
300MHz to 7GHz RF Power Detector
= 25°C
3200
2800
2400
2000
1600
1200
800
1000MHz
GAIN = 2
= 0V
V
OS
33pF
LTC5532
300MHz
4000MHz
1
2
3
6
5
4
RF
V
RF
IN
CC
V
CC
INPUT
100pF
0.1µF
GND
V
OUT
R
R
A
2000MHz
3000MHz
V
OS
V
V
OS
M
5000MHz
6000MHz
7000MHz
–12 –7
–2
RF INPUT POWER (dBm)
REFERENCE
400
5532 TA01
B
0
–17
–32 –27 –22
3
8
5532 TA02
5532i
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
1
LTC5532
U
W
U
W W
U W
PACKAGE/ORDER I FOR ATIO
ABSOLUTE AXI U RATI GS
(Note 1)
ORDER PART
VCC, VOUT, VM, VOS .......................................... –0.3V to 6.5V
RFIN Voltage .........................................(VCC ± 1V) to 7V
IVOUT ...................................................................... 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
NUMBER
TOP VIEW
LTC5532ES6
RF
1
6 V
5 V
4 V
IN
CC
OUT
M
GND 2
V
OS
3
S6 PART
MARKING
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 250°C/W
LTAFS
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 1k, VOS = 0V unless
otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
6
UNITS
V
V
Operating Voltage
Operating Current
●
●
●
●
2.7
CC
I
I
= 0mA
VOUT
0.5
0.7
155
mA
mV
mA
MHz
pF
VCC
V
V
V
V
V
V
V
(No RF Input)
R
LOAD
= 2k, V = 0V
85
2
100 to 140
OUT OL
OS
Output Current
Bandwidth
V
C
= 1.75V, V = 2.7V, ∆V < 10mV
OUT
4
2
OUT
OUT
OUT
OUT
OUT
OUT
CC
= 33pF, R
= 2k (Note 4)
LOAD
LOAD
Load Capacitance
Slew Rate
(Note 6)
●
33
V
V
= 1V Step, C
= 33pF, Total R = 2k (Note 3)
LOAD
3
1
V/µs
RFIN
LOAD
Noise
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination,
mV
P-P
CC
50Ω AC Output Termination
V
V
V
V
Voltage Range
Input Current
●
●
●
●
0
1
V
µA
V
OS
V
V
= 1V
–0.5
0
0.5
OS
OS
Voltage Range
Input Current
V
-1. 8
CC
M
M
= 3.6V
–0.5
0.5
µA
M
RF Input Frequency Range
300 to 7000
–32 to 8
220
MHz
dBm
Ω
IN
RF Input Power Range
IN
RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V
CC
RF AC Input Resistance
IN
F = 1000MHz, Pin = –25dBm
F = 1000MHz, Pin = –25dBm
RF Input Shunt Capacitance
IN
0.65
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
Note 3: The rise time at V
is measured between 1.3V and 2.3V.
OUT
of a device may be impaired.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
equation: BW = 0.35/rise time.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
5532i
2
LTC5532
U W
TYPICAL PERFOR A CE CHARACTERISTICS (RLOAD = 20k)
Output Voltage vs Supply Voltage
(RF Input Signal Off)
Supply Current vs Supply Voltage
(RF Input Signal Off)
Output Delay vs RF Input Power
500
480
460
440
420
130
125
120
115
110
1000
800
600
400
200
0
V
= 3.6V
CC
= 25°C
V
= 0V
OS
T
A
GAIN = 2
V
OS
= 0V
T
= 85°C
GAIN = 2
A
T
= –40°C
A
T
T
= 25°C
A
T
T
= 25°C
= 85°C
A
= –40°C
A
90% SWITCHING
A
50% SWITCHING
5
–5
0
–10
3.0
3.5 4.0 4.5
SUPPLY VOLTAGE (V)
5.5
6.0
2.5 3.0
3.5 4.0 4.5
SUPPLY VOLTAGE (V)
5.0 5.5
6.0
10
2.5
5.0
RF INPUT POWER (dBm)
5532 G23
5532 G1a
5532 G2a
Typical Detector Characteristics,
2000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
1000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
300MHz, Gain = 2, VOS = 0V
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
CC
= 3.6V
V
CC
= 3.6V
V
CC
= 3.6V
T
= –40°C
A
T
= –40°C
T = –40°C
A
A
T = 25°C
A
T
A
= 25°C
T = 25°C
A
T
= 85°C
T
= 85°C
T = 85°C
A
A
A
400
400
400
0
0
0
–16
–16
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
–32 –28 –24 –20
–12 –8 –4
0
4
8
–32 –28 –24 –20
–12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5532 G01
5532 G02
5532 G03
Typical Detector Characteristics,
4000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
5000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
3000MHz, Gain = 2, VOS = 0V
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
CC
= 3.6V
V
CC
= 3.6V
V
CC
= 3.6V
T
= –40°C
T
= –40°C
A
T
= –40°C
A
A
T
A
= 25°C
T = 25°C
A
T
= 25°C
A
T
A
= 85°C
T
A
= 85°C
T
A
= 85°C
400
400
400
0
0
0
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
–16
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
–32 –28 –24 –20
–12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5532 G04
5532 G05
5532 G06
5532i
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LTC5532
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(RLOAD = 20k)
Typical Detector Characteristics,
6000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
7000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
300MHz, Gain = 4, VOS = 0V
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
CC
= 3.6V
V
CC
= 3.6V
V
CC
= 3.6V
T
A
= –40°C
T
A
= –40°C
T
= –40°C
A
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 85°C
400
400
400
T
= 85°C
A
0
0
0
–16
–16
–12
–8 –4
–32 –28 –24 –20
–12 –8 –4
0
4
8
–17
–32 –28 –24 –20
0
4
8
–32 –27 –22
–12 –7
–2
3
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5532 G07
5532 G10
5532 G08
Typical Detector Characteristics,
1000MHz, Gain = 4, VOS = 0V
VOUT vs RF Input Power and VOS
300MHz, Gain = 2
,
VOUT vs RF Input Power and VOS
1000MHz, Gain = 2
,
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
CC
= 3.6V
V
T
= 3.6V
V
A
= 3.6V
CC
CC
A
= 25°C
T
= 25°C
T
A
= –40°C
T
A
= 25°C
V
V
= 1V
V
OS
= 1V
OS
= 0.5V
= 0.2V
V
OS
= 0.5V
= 0.2V
OS
OS
T
A
= 85°C
400
400
400
V
V
OS
V
OS
= 0V
V
OS
= 0V
0
0
0
–16
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
–32 –28 –24 –20
–12 –8 –4
0
4
8
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5532 G11
5532 G12
5532 G13
VOUT vs RF Input Power, 300MHz
and 1000MHz, Gain = 2 and 4,
VOS = 0V
3600
3200
2800
2400
2000
1600
1200
800
V
T
= 3.6V
300MHz
GAIN = 4
CC
A
= 25°C
1000MHz
GAIN = 4
300MHz
GAIN = 2
400
1000MHz
GAIN = 2
0
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
RF INPUT POWER (dBm)
5532 G14
5532i
4
LTC5532
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(RLOAD = 20k)
VOUT Slope vs RF Input Power
at 300MHz
VOUT Slope vs RF Input Power
at 1GHz
VOUT Slope vs RF Input Power
at 2GHz
1000
100
10
1000
100
10
1000
100
10
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
CC
CC
GAIN = 2
GAIN = 2
GAIN = 2
V
= 0V
V
= 0V
V
OS
= 0V
OS
OS
T
= –40°C
T
= –40°C
T
A
= –40°C
A
A
T
A
= 85°C
T
A
= 85°C
T = 85°C
A
A
T
= 25°C
T
A
= 25°C
T = 25°C
A
1
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5532 G15
5532 G16
5532 G17
VOUT Slope vs RF Input Power
at 3GHz
VOUT Slope vs RF Input Power
at 4GHz
VOUT Slope vs RF Input Power
at 5GHz
1000
100
10
1000
100
10
1000
100
10
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
CC
CC
GAIN = 2
GAIN = 2
= 0V
GAIN = 2
V = 0V
OS
V
= 0V
V
OS
OS
T
A
= –40°C
T
A
= –40°C
T = –40°C
A
T
= 85°C
T
A
= 85°C
T
A
= 85°C
A
A
T
= 25°C
T
A
= 25°C
T
= 25°C
A
1
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5532 G18
5532 G19
5532 G20
VOUT Slope vs RF Input Power
at 6GHz
VOUT Slope vs RF Input Power
at 7GHz
1000
100
10
1000
100
10
V
= 3.6V
V
= 3.6V
CC
CC
GAIN = 2
GAIN = 2
= 0V
V
OS
= 0V
V
OS
T
A
= –40°C
T
A
= –40°C
T
= 85°C
A
T
A
= 85°C
T
A
= 25°C
T
= 25°C
A
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5532 G21
5532 G22
5532i
5
LTC5532
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
290.45
234.41
178.25
137.31
109.17
86.30
68.65
57.48
49.79
43.56
38.67
34.82
31.68
29.13
27.17
25.73
24.56
23.18
22.31
20.73
19.88
19.40
19.05
19.08
19.55
20.85
21.94
20.60
19.29
18.69
18.53
18.74
19.79
19.75
19.99
–136.22
–162.54
–170.53
–159.89
–147.57
–136.18
–121.74
–107.60
–96.72
–86.70
–77.91
–70.13
–62.86
–56.01
–49.83
–44.24
–39.74
–35.35
–30.62
–26.88
–22.31
–18.23
–14.25
–10.21
–6.30
5508 TA03
0.3000GHz-7.000GHz
–2.84
–1.49
–0.07
2.99
6.61
10.39
14.35
17.91
20.77
22.47
5532i
6
LTC5532
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
216.45
190.63
161.98
133.17
113.08
94.55
75.33
63.52
55.19
48.64
43.73
39.71
36.47
33.69
31.61
29.78
28.27
26.63
26.12
24.20
23.28
22.60
22.21
22.15
22.61
23.90
24.97
23.51
22.25
21.57
21.43
21.69
22.68
22.81
23.07
–76.47
–98.28
–112.03
–111.53
–109.05
–107.08
–98.50
–88.19
–80.05
–72.23
–64.81
–58.31
–52.27
–46.77
–41.25
–36.61
–32.39
–28.12
–23.97
–20.75
–16.69
–12.77
–9.08
0.3000GHz-7.000GHz
5508 TA04
–5.24
–1.58
1.53
2.62
4.00
6.94
10.62
14.02
17.77
21.24
24.21
25.56
5532i
7
LTC5532
U
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PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
V
OS (Pin 3): VOUT Offset Voltage Adjustment. From 0V to
120mV, VOUT does not change. Above 120mV, VOUT will
track VOS.
VM (Pin 4): Negative Input to Buffer Amplifier.
V
OUT (Pin 5): Detector Output.
GND (Pin 2): Ground.
VCC (Pin6):PowerSupplyVoltage, 2.7Vto6V. VCC should
be bypassed appropriately with ceramic capacitors.
W
BLOCK DIAGRA
RF
SOURCE
12pF TO 200pF
(DEPENDING ON
APPLICATION)
V
CC
6
+
BUFFER
V
V
5
4
OUT
M
–
500Ω
1
RF
IN
500Ω
BIAS
31k
25pF
+
–
+
–
V
RF DET
3
OS
80k
24k
80k
50µA
50µA
120mV
GND
2
+
5532 BD
5532i
8
LTC5532
U
W U U
APPLICATIO S I FOR ATIO
Operation
reference voltage. When the internal detector output volt-
age (which is connected to the positive input of the buffer
amplifier) exceeds the external voltage on VM, VOUT will
switch high.
The LTC5532 RF detector integrates several functions to
provideRFpowerdetectionoverfrequenciesrangingfrom
300MHz to 7GHz. These functions include an internal fre-
quency compensated buffer amplifier, an RF Schottky di-
ode peak detector and a level shift amplifier to convert the
RF input signal to DC. The LTC5532 has both gain setting
and voltage offset adjustment capabilities.
The VOS input controls the DC input voltage to the buffer
amplifier. VOS must be connected to ground if the DC
output voltage is not to be changed. The buffer is initially
trimmed to 120mV (Gain = 2x) with VOS connected to
ground.
Buffer Amplifier
The VOS pin is used to change the initial VOUT starting
voltage. This function, in combination with gain adjust-
ment enables the LTC5532 output to span the input range
of a variety of analog-to-digital converters. VOUT will not
change until VOS exceeds 120mV. The starting voltage at
VOUT for VOS >120mV is:
The output buffer amplifier is capable of supplying typi-
cally 4mA into a load. The negative terminal VM is brought
outtoapinforgainselection.Externalresistorsconnected
between VOUT and VM (RA) and VM to ground (RB) will set
the gain of this amplifier.
Gain = 1 + RA/RB
VOUT = 0.5 • VOS • Gain
The amplifier is unity gain stable; however a minimum
gain of two is recommended to improve low output
voltage accuracy. The amplifier has a bandwidth of 2MHz
with a gain of 2. For increased gain applications, the
bandwidth is reduced according to the formula:
wheregainistheoutputbuffergain. Forabuffergainof2x,
VOUT will exactly track VOS above 120mV.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 55µA and drives a
25pF internal peak detector capacitor.
Bandwidth = 4MHz/(Gain) = 4MHz • RB/(RA + RB)
A capacitor can be placed across the feedback resistor RA
toshapethefrequencyresponse. Inaddition, theamplifier
can be used as a comparator. VM can be connected to a
Demo Board Schematic
V
CC
2.7V TO 6V
C1
C4
39pF
LTC5532ES6
0.1µF
RF
IN
C2
1
2
3
6
5
4
100pF
RF
V
IN
CC
R1
(OPT)
GND V
V
OUT
OUT
C3
(OPT)
R2
10k
1%
V
V
M
OS
OFFSET
ADJUSTMENT
R3
10k
1%
GND
5532 DB
5532i
9
LTC5532
W U U
U
APPLICATIO S I FOR ATIO
Applications
control, using the LTC5532 with a capacitive tap to the
power amplifier. A 0.5pF capacitor (C1) followed by a
200Ω resistor (R1) form a coupling circuit with about
20dB loss at 900MHz referenced to the LTC5532 RF input
pin. In the actual product implementation, component
valuesforthecapacitivetapmaybedifferentdependingon
parts placement, PCB parasitics and parameters of the
antenna.
TheLTC5532canbeusedasaself-standingsignalstrength
measuring receiver for a wide range of input signals from
–32dBm to 8dBm for frequencies from 300MHz to 7GHz.
The LTC5532 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the RSSI output
can be split between two branches, providing AC-coupled
data (or audio) output and DC-coupled RSSI output for
signal strength measurements and AGC.
The LTC5532 can be configured as a comparator for RF
power detection and RF power alarms. The characteriza-
tion data includes a plot of the LTC5532 output delay in
response to a positive input step of varying RF level.
The LTC5532 can be used for RF power detection and
control. Figure 1 is an example of a transmitter power
R1
C1
200Ω
1%
0.5pF
5%
T
PA
X
Li-Ion
0.1µF
MODULE
LTC5532ES6
CELL BAND
1
2
3
6
5
4
RF
V
DIPLEXER
IN
CC
GND V
OUT
PCS BAND
OFFSET
ADJUSTMENT
R2
R3
V
OS
V
M
MOBILE
PHONE
DSP
VPC
BSE
5532 F01
Figure 1. Mobile Phone TX Power Control Application Diagram with a Capacitive Tap
5532i
10
LTC5532
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5532i
11
LTC5532
RELATED PARTS
PART NUMBER
LTC1757A
LTC1758
LTC1957
LTC4400
LTC4401
LTC4403
LT5500
DESCRIPTION
COMMENTS
RF Power Controller
Single/Dual Band GSM/DCS/GPRS Mobile Phones
RF Power Controller
Single/Dual Band GSM/DCS/GPRS Mobile Phones
RF Power Controller
Single/Dual Band GSM/DCS/GPRS Mobile Phones
RF Power Controller in SOT-23 Package
RF Power Controller in SOT-23 Package
RF Power Controller for EDGE/TDMA
1.8GHz to 2.7GHz RF Front End
Single/Dual Band GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW
Single/Dual Band GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW
Multiband GSM/GPRS/EDGE Mobile Phones
Dual LNA gain Setting +13.5dB/–14dB at 2.5GHz, Double-Balanced Mixer,
1.8V ≤ V
≤ 5.25V
SUPPLY
LT5502
LT5503
400MHz Quadrature Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range
1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth
1.2GHz to 2.7GHz Direct IQ Modulator and
Up Converting Mixer
LT5504
800MHz to 2.7GHz RF Measuring Receiver
300MHz to 3.5GHz RF Power Detector
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply
>40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
LTC5505
LT5506
500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain
LTC5507
LTC5508
LTC5509
LT5511
100kHz to 1GHz RF Power Detector
300MHz to 7GHz RF Power Detector
300MHz to 3GHz RF Power Detector
High Signal Level Up Converting Mixer
High Signal Level Down Converting Mixer
48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
SC70 Package
SC70 Package
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC-3GHz, 20dBm IIP3, Integrated LO Buffer
20dBm IIP3, Integrated LO Quadrature Generator
LT5512
LTC5515
1.5GHz to 2.5GHz Direct Conversion
Quadrature Demodulator
LTC5516
0.8GHz to 1.5GHz Direct Conversion
Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
5532i
LT/TP 0803 1K • PRINTED IN USA
12 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
LINEAR TECHNOLOGY CORPORATION 2003
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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