MAX19996ETP+T [MAXIM]
Telecom Circuit, 1-Func, BICMOS, 5 X 5 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, MO-220, TQFN-20;
| 型号： | MAX19996ETP+T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Telecom Circuit, 1-Func, BICMOS, 5 X 5 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, MO-220, TQFN-20 电信 信息通信管理 电信集成电路 |
| 文件： | 总19页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-4177; Rev 0; 7/08
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
General Description
Features
The MAX19996 single, high-linearity downconversion
mixer provides 8.7dB conversion gain, +24.5dBm IIP3,
and 9.6dB noise figure for 2000MHz to 3000MHz WCS,
LTE, WiMAX™, and MMDS wireless infrastructure appli-
cations. With an 1800MHz to 2550MHz LO frequency
range, this particular mixer is ideal for low-side LO
injection receiver architectures. High-side LO injection
is supported by the MAX19996A, which is pin-for-pin
and functionally compatible with the MAX19996.
o 2000MHz to 3000MHz RF Frequency Range
o 1800MHz to 2550MHz LO Frequency Range
o 50MHz to 500MHz IF Frequency Range
o 8.7dB Typical Conversion Gain
o 9.6dB Typical Noise Figure
o +24.5dBm Typical Input IP3
o +11dBm Typical Input 1dB Compression Point
o 69dBc Typical 2RF-2LO Spurious Rejection at
In addition to offering excellent linearity and noise perfor-
mance, the MAX19996 also yields a high level of compo-
nent integration. This device includes a double-balanced
passive mixer core, an IF amplifier, and an LO buffer.
On-chip baluns are also integrated to allow for single-
ended RF and LO inputs. The MAX19996 requires a
nominal LO drive of 0dBm, and supply current is typical-
P
RF
= -10dBm
o Integrated LO Buffer
o Integrated RF and LO Baluns for Single-Ended
Inputs
ly 230mA at V = +5.0V or 149.5mA at V = +3.3V.
CC
CC
o Low -3dBm to +3dBm LO Drive
The MAX19996 is pin compatible with the MAX19996A
2300MHz to 3900MHz mixer. The device is also pin sim-
ilar with the MAX9984/MAX9986 400MHz to 1000MHz
mixers and the MAX9993/MAX9994/MAX9996 1700MHz
to 2200MHz mixers, making this entire family of down-
converters ideal for applications where a common PCB
layout is used for multiple frequency bands.
o Pin Compatible with the MAX19996A 2300MHz to
3900MHz Mixer
o Pin Similar with the MAX9993/MAX9994/
MAX9996 1700MHz to 2200MHz Mixers and
MAX9984/MAX9986 400MHz to 1000MHz Mixers
o Single +5.0V or +3.3V Supply
The MAX19996 is available in a compact 5mm x 5mm,
20-pin thin QFN lead-free package with an exposed
pad. Electrical performance is guaranteed over the
extended -40°C to +85°C temperature range.
o External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
Applications
Ordering Information
2.3GHz WCS Base Stations
PART
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP*
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
MAX19996ETP+
MAX19996ETP+T
+Denotes a lead-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Private Mobile Radios
Military Systems
WiMAX is a trademark of WiMAX Forum.
Pin Configuration appears at end of data sheet.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
CC
IF+, IF-, LOBIAS, LO, IFBIAS,
LEXT to GND ..........................................-0.3V to (V
V
to GND...........................................................-0.3V to +5.5V
θ
θ
(Notes 2, 3)..............................................................+38°C/W
(Notes 1, 3)................................................................13°C/W
Operating Case Temperature
JA
JC
+ 0.3V)
CC
RF, LO Input Power ........................................................+12dBm
RF, LO Current
(RF and LO is DC shorted to GND through a balun)......50mA
Continuous Power Dissipation (Note 1) ..............................5.0W
Range (Note 4)........................................T = -40°C to +85°C
C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Based on junction temperature T = T + (θ x V
x I ). This formula can be used when the temperature of the exposed
CC
J
C
JC
CC
MAX196
pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction
temperature must not exceed +150°C.
Note 2: Junction temperature T = T + (θ x V
x I ). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
J
A
JA
CC
CC
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: T is the temperature on the exposed pad of the package. T is the ambient temperature of the device and PCB.
C
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
= +4.75V to +5.25V, no input AC signals. T = -40°C to +85°C, unless otherwise noted. Typical val-
CC
C
ues are at V
= +5.0V, T = +25°C, all parameters are production tested.) (Note 6)
CC
C
PARAMETER
Supply Voltage
Supply Current
SYMBOL
CONDITIONS
MIN
TYP
5
MAX
5.25
245
UNITS
V
V
4.75
CC
CC
I
230
mA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
= +3.0V to +3.6V, no input AC signals. T = -40°C to +85°C, unless otherwise noted. Typical values
CC
C
are at V
= +3.3V, T = +25°C, parameters are guaranteed by design and not production tested, unless otherwise noted.)
CC
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
3.3
MAX
UNITS
V
Supply Voltage
Supply Current
V
3.0
3.6
CC
CC
I
Total supply current, V
= +3.3V
149.5
mA
CC
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
SYMBOL
CONDITIONS
MIN
2000
1800
TYP
MAX
3000
2550
UNITS
MHz
RF Frequency
f
(Note 7)
(Note 7)
RF
LO
LO Frequency
IF Frequency
LO Drive Level
f
MHz
Using Mini-Circuits TC4-1W-17 4:1 transformer
as defined in the Typical Application Circuit, IF
matching components affect the IF frequency
range (Note 7)
100
500
f
MHz
dBm
IF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 7)
50
-3
250
+3
P
LO
2
_______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
= -3dBm to +3dBm,
LO
CC
P
= -5dBm, f = 2300MHz to 2800MHz, f = 2000MHz to 2500MHz, f = 300MHz, f > f , T = -40°C to +85°C. Typical val-
RF
RF LO IF RF LO C
ues are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2500MHz, f = 2200MHz, f = 300MHz, T = +25°C, all parameters are
RF LO RF LO IF C
CC
guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
CONDITIONS
= +25°C (Note 5)
MIN
TYP
MAX
UNITS
Conversion Power Gain
G
T
C
8.1
8.7
9.3
dB
C
Conversion Power Gain Variation
vs. Frequency
f
= 2300MHz to 2800MHz for any
RF
ΔG
0.1
dB
C
100MHz band
Conversion Power Gain
Temperature Coefficient
TC
IP
T
T
= -40°C to +85°C
= +25°C (Note 8)
-0.012
dB/°C
G
C
10
11
11
dBm
dBm
C
Input 1dB Compression Point
1dB
f
RF
= 2500MHz, T = +25°C (Note 8)
10.4
C
f
T
- f
= 1MHz, P
= P
= -5dBm,
RF2
RF1 RF2
RF1
Third-Order Input Intercept Point
IIP3
22
24.5
dBm
= +25°C (Note 5)
C
f
f
T
= 2300MHz to 2800MHz, f = 300MHz,
IF
RF
Third-Order Input Intercept Point
Variation Over Temperature
- f
= 1MHz, P
= P
= -5dBm,
RF2
0.5
dB
RF1 RF2
RF1
= -40°C to +85°C
C
f
RF
= 2300MHz to 2700MHz, f = 300MHz,
IF
single sideband, no blockers present
(Note 9)
9.6
9.6
12
Noise Figure
NF
dB
SSB
f
RF
= 2500MHz, f = 300MHz, P = 0dBm,
IF LO
V
= +5.0V, T = +25°C, single sideband,
10.5
CC
C
no blockers present (Note 9)
f
= 2000MHz to 3000MHz, single
RF
Noise Figure Temperature
Coefficient
TC
sideband, no blockers present,
= -40°C to +85°C (Note 9)
0.0183
dB/°C
dB
NF
T
C
+8dBm blocker tone applied to RF port, f
RF
Noise Figure Under Blocking
Condition
= 2300MHz, f = 2110MHz, f
LO
=
BLOCKER
= +5.0V,
CC
NF
20.8
25
B
2400MHz, P = -3dBm, V
LO
T
C
= +25°C (Note 9)
f
= 2300MHz to
RF
P
P
= -10dBm
= -5dBm
60
55
70
60
69
64
78
68
RF
RF
2700MHz, f
2000MHz to 2400MHz,
f
=
LO
2RF-2LO Spur Rejection
3RF-3LO Spur Rejection
2 x 2
3 x 3
dBc
dBc
(Note 5)
= f + 150MHz
LO
SPUR
f
= 2300MHz to
RF
P
= -10dBm
RF
2700MHz, f
=
LO
P
= -5dBm
2000MHz to 2400MHz,
= f + 100MHz
RF
(Note 5)
f
SPUR
LO
LO on and IF terminated into a matched
impedance
RF Input Return Loss
LO Input Return Loss
18
20
dB
dB
RF and IF terminated into a matched
impedance
_______________________________________________________________________________________
3
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, V
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
= -3dBm to +3dBm,
LO
CC
P
= -5dBm, f = 2300MHz to 2800MHz, f = 2000MHz to 2500MHz, f = 300MHz, f > f , T = -40°C to +85°C. Typical val-
RF
RF LO IF RF LO C
ues are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2500MHz, f = 2200MHz, f = 300MHz, T = +25°C, all parameters are
RF LO RF LO IF C
CC
guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Nominal differential impedance at the IC’s
IF outputs
IF Output Impedance
Z
200
Ω
IF
MAX196
RF terminated into 50Ω,
f
= 450MHz,
IF
LO driven by 50Ω
25
25
L1 = L2 = 120nH
source, IF transformed
to 50Ω using external
components shown in
the Typical Application
Circuit. See the IF Port
Return Loss vs. IF
f
= 350MHz,
IF
IF Output Return Loss
dB
L1 = L2 = 270nH
Frequency graph in the
Typical Operating
Characteristics for
performance vs.
inductor values
f
= 300MHz,
IF
25
34
L1 = L2 = 470nH
f
RF
= 2300MHz to 2700MHz, P = +3dBm
LO
Minimum RF-to-IF Isolation
dB
(Note 5)
Maximum LO Leakage at RF Port
Maximum 2LO Leakage at RF Port
f
f
f
= 1900MHz to 2500MHz, P = +3dBm
-22.7
-21
dBm
dBm
LO
LO
LO
LO
= 1900MHz to 2500MHz, P = +3dBm
LO
= 1900MHz to 2500MHz, P = +3dBm
LO
Maximum LO Leakage at IF Port
-27.5
dBm
(Note 5)
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, RF and LO ports are driven from 50Ω sources, Typical values are at V
= +3.3V, P = -5dBm,
RF
CC
P
LO
= 0dBm, f = 2500MHz, f = 2200MHz, f = 300MHz, T = +25°C, unless otherwise noted.) (Note 6)
RF LO IF C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Power Gain
G
8.6
dB
C
Conversion Power Gain Variation
vs. Frequency
f
= 2300MHz to 2800MHz for any
RF
ΔG
0.1
dB
C
100MHz band
Gain Variation Over Temperature
Input 1dB Compression Point
TC
IP
T
= -40°C to +85°C
-0.012
7.5
dB/°C
dBm
G
C
(Note 8)
1dB
f
= 2500MHz, f
= 2501MHz, f
= -5dBm
RF2
=
RF1
RF2
LO
Third-Order Input Intercept Point
IIP3
19.8
dBm
2200MHz, P
= P
RF1
Third-Order Input Intercept
Variation Over Temperature
f
= 2500MHz, f
= 2501MHz, f
= -5dBm, T = +25°C
RF2 C
=
RF1
RF2
LO
0.5
9.6
dB
dB
2200MHz, P
= P
RF1
Noise Figure
NF
Single sideband, no blockers present (Note 9)
Single sideband, no blockers present,
T
SSB
Noise Figure Temperature
Coefficient
TC
0.017
dB/°C
NF
= -40°C to +85°C (Note 9)
C
P
P
= -10dBm
= -5dBm
65.9
60.9
RF
RF
2RF-2LO Spur Rejection
2 x 2
dBc
4
_______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, RF and LO ports are driven from 50Ω sources, Typical values are at V
= +3.3V, P = -5dBm,
RF
CC
P
LO
= 0dBm, f = 2500MHz, f = 2200MHz, f = 300MHz, T = +25°C, unless otherwise noted.) (Note 6)
RF
LO
IF
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
P
P
= -10dBm
= -5dBm
67.9
57.9
RF
RF
3RF-3LO Spur Rejection
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
3 x 3
dBc
LO on and IF terminated into a matched
impedance
16
dB
dB
Ω
RF and IF terminated into a matched
impedance
16.7
200
Nominal differential impedance at the IC’s
IF outputs
Z
IF
RF terminated into 50Ω,
f
= 450MHz,
IF
LO driven by 50Ω source,
IF transformed to 50Ω
using external
23
23
23
L1 = L2 = 120nH
components shown in the
Typical Application
Circuit. See the IF Port
Return Loss vs. IF
Frequency graph in the
Typical Operating
Characteristics for
performance vs. inductor
values.
f
= 350MHz,
IF
IF Output Return Loss
dB
L1 = L2 = 270nH
f
= 300MHz,
IF
L1 = L2 = 470nH
Minimum RF-to-IF Isolation
f
f
f
f
= 2300MHz to 2700MHz, P = +3dBm
33
dB
RF
LO
LO
LO
LO
Maximum LO Leakage at RF Port
Maximum 2LO Leakage at RF Port
Maximum LO Leakage at IF Port
= 1900MHz to 2500MHz, P = +3dBm
-26.6
-28.8
-21.9
dBm
dBm
dBm
LO
= 1900MHz to 2500MHz, P = +3dBm
LO
= 1900MHz to 2500MHz, P = +3dBm
LO
Note 5: 100% production tested for functional performance.
Note 6: All limits reflect losses of external components, including a 0.8dB loss at f = 300MHz due to the 4:1 impedance trans-
IF
former. Output measurements were taken at IF outputs of the Typical Application Circuit.
Note 7: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the Typical Operating Characteristics.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 9: Measured with external LO source noise filtered so that the noise floor is -174dBm/Hz. This specification reflects the
effects of all SNR degradations in the mixer including the LO noise, as defined in Application Note 2021: Specifications
and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
_______________________________________________________________________________________
5
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics
(Typical Application Circuit, V
= +5.0V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
11
10
9
11
10
9
11
10
9
T
= -40°C
C
T
= +25°C
C
MAX196
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
8
8
8
T
C
= +85°C
7
7
7
6
6
6
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
28
27
26
25
24
23
22
28
27
26
25
24
23
22
28
27
26
25
24
23
22
P
RF
= -5dBm/TONE
P
= -5dBm/TONE
P
= -5dBm/TONE
RF
RF
T
= +25°C
V
= 4.75V, 5.0V, 5.25V
CC
C
P
LO
= -3dBm, 0dBm, +3dBm
T
= +85°C
C
T
= -40°C
C
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
12
11
10
9
12
11
10
9
12
11
10
9
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
= +25°C
C
8
8
8
T
= -40°C
C
7
7
7
1800 2000 2200 2400 2600 2800 3000
RF FREQUENCY (MHz)
1800 2000 2200 2400 2600 2800 3000
RF FREQUENCY (MHz)
1800 2000 2200 2400 2600 2800 3000
RF FREQUENCY (MHz)
6
_______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +5.0V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
85
75
65
55
45
85
75
65
55
45
85
75
65
55
45
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
T
= +85°C
P
= +3dBm
C
LO
T
C
= +25°C
T
= -40°C
C
P
= -3dBm
2400
P
= 0dBm
LO
LO
V
= 4.75V, 5.0V, 5.25V
CC
2000
2200
2400
2600
2800
3000
2000
2200
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
85
80
75
70
65
60
55
85
80
75
70
65
60
55
85
80
75
70
65
60
55
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
T
= -40°C
C
T
= +25°C
C
V
= 4.75V, 5.0V, 5.25V
CC
T
= +85°C
P
= -3dBm, 0dBm, +3dBm
C
LO
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
1dB
1dB
1dB
14
13
12
11
10
9
14
13
12
11
10
9
14
13
12
11
10
9
T
= +85°C
C
V
= 5.25V
CC
V
= 5.0V
CC
P
= -3dBm, 0dBm, +3dBm
T
C
= +25°C
LO
V = 4.75V
CC
T
= -40°C
C
8
8
8
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
7
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +5.0V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
0
-10
-20
-30
-40
0
-10
-20
-30
-40
0
-10
-20
-30
-40
MAX196
P
= -3dBm, 0dBm, +3dBm
T
= -40°C
LO
C
V
= 4.75V, 5.0V, 5.25V
CC
T
= +25°C
C
T
= +85°C
C
1700
1900
2100
2300
2500
2700
1700
1900
2100
2300
2500
2700
1700
1900
2100
2300
2500
2700
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
70
60
50
40
30
20
10
70
60
50
40
30
20
10
70
60
50
40
30
20
10
V
= 5.0V
CC
V
= 5.25V
CC
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V = 4.75V
CC
T
= +25°C
T
= -40°C
C
C
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
-30
-35
-40
V
= 5.0V, 5.25V
CC
T
= -40°C, +25°C, +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V
CC
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
8
_______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +5.0V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
0
10
20
30
40
0
5
0
10
20
30
40
V
= 4.75V, 5.0V, 5.25V
CC
f
= 2400MHz
LO
P
= +3dBm
LO
L1, L2 = 120nH
10
15
20
25
30
P
= 0dBm
LO
P
= -3dBm, 0dBm, +3dBm
LO
L1, L2 = 270nH
L1, L2 = 470nH
P
= -3dBm
LO
2000
2200
2400
2600
2800
3000
50
140
230
320
410
500
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (T )
C
0
-10
-20
-30
-40
70
60
50
40
30
20
10
250
240
230
220
210
200
V
= 5.25V
CC
L3 = 0Ω
V
= 5.0V
CC
L3 = 4.7nH
V
= 4.75V
CC
L3 = 4.7nH
L3 = 0Ω
1700
1900
2100
2300
2500
2700
2000
2200
2400
2600
2800
3000
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
RF FREQUENCY (MHz)
TEMPERATURE (°C)
_______________________________________________________________________________________
9
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
CONVERSION GAIN
vs. RF FREQUENCY
CONVERSION GAIN
vs. RF FREQUENCY
CONVERSION GAIN
vs. RF FREQUENCY
11
10
9
11
10
9
11
10
9
V
= 3.3V
V
= 3.3V
CC
CC
T
= -40°C
C
T
= +25°C
C
MAX196
8
8
8
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.0V, 3.3V, 3.6V
CC
7
7
7
T
= +85°C
C
6
6
6
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
22
21
20
19
18
17
16
22
21
20
19
18
17
16
22
21
20
19
18
17
16
P
RF
= -5dBm/TONE
V
= 3.3V
CC
P
= -5dBm/TONE
V
CC
= 3.3V
P
RF
= -5dBm/TONE
RF
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C
C
V
= 3.0V, 3.3V, 3.6V
CC
T
= -40°C
C
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
12
11
10
9
12
11
10
9
12
11
10
9
V
= 3.3V
V
= 3.3V
CC
CC
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
LO
T
= +25°C
C
8
8
8
T
= -40°C
C
7
7
7
1800 2000 2200 2400 2600 2800 3000
RF FREQUENCY (MHz)
1800 2000 2200 2400 2600 2800 3000
RF FREQUENCY (MHz)
1800 2000 2200 2400 2600 2800 3000
RF FREQUENCY (MHz)
10 ______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
85
75
65
55
45
85
75
65
55
45
85
75
65
55
45
P
= -5dBm
= 3.3V
RF
P
= -5dBm
P
V
= -5dBm
= 3.3V
RF
RF
V
CC
CC
T
= +85°C
C
P
LO
= +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
P
= -3dBm
LO
T
= +25°C
C
T
C
= -40°C
P
= 0dBm
LO
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
70
65
60
55
50
45
40
70
65
60
55
50
45
40
70
65
60
55
50
45
40
P
= -5dBm
= 3.3V
P
= -5dBm
= 3.3V
P
= -5dBm
RF
RF
RF
V
V
CC
CC
T
= +25°C
C
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
T
= -40°C
LO
CC
C
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
1dB
INPUT P
vs. RF FREQUENCY
1dB
1dB
10
9
10
9
10
9
V = 3.3V
CC
V
= 3.3V
CC
T
C
= +85°C
V
= 3.6V
CC
8
8
8
7
7
7
V
= 3.3V
2800
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C
C
V
= 3.0V
CC
6
6
6
T
= -40°C
C
5
5
5
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 11
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
0
-10
-20
-30
-40
0
-10
-20
-30
-40
0
-10
-20
-30
-40
V = 3.3V
CC
V
= 3.3V
CC
MAX196
T
= -40°C
C
V
= 3.0V, 3.3V, 3.6V
P
= -3dBm, 0dBm, +3dBm
CC
LO
T
= +25°C
C
T
= +85°C
C
1700
1900
2100
2300
2500
2700
1700
1900
2100
2300
2500
2700
1700
1900
2100
2300
2500
2700
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
60
50
40
30
20
60
50
40
30
20
V
= 3.3V
V
= 3.3V
CC
CC
T
= +85°C
C
50
40
30
20
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C
C
V
= 3.0V, 3.3V, 3.6V
CC
T
= -40°C
C
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
V
= 3.3V
V
= 3.3V
CC
CC
V
= 3.6V
CC
V
= 3.3V
CC
T
= -40°C, +25°C, +85°C
C
V
= 3.0V
CC
P
= -3dBm, 0dBm, +3dBm
LO
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
12 ______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
CC
LO
RF
C
otherwise noted.)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
LO RETURN LOSS
vs. LO FREQUENCY
0
5
0
10
20
30
40
0
5
V
= 3.3V
V
= 3.3V
CC
V
= 3.0V, 3.3V, 3.6V
CC
CC
f
= 2400MHz
P
= +3dBm
LO
LO
P
LO
= 0dBm
L1, L2 = 120nH
10
15
20
25
30
10
15
20
25
30
P
= -3dBm
LO
P
= -3dBm, 0dBm, +3dBm
LO
L1, L2 = 270nH
L1, L2 = 470nH
230
2000
2200
2400
2600
2800
3000
1600 1800 2000 2200 2400 2600 2800 3000
LO FREQUENCY (MHz)
50
140
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SUPPLY CURRENT
vs. TEMPERATURE (T )
INPUT IP3
vs. RF FREQUENCY
CONVERSION GAIN
vs. RF FREQUENCY
C
160
155
150
145
140
135
22
21
20
19
18
17
16
11
10
9
P
= -5dBm/TONE
V
= 3.3V
CC
V
= 3.3V
RF
CC
V
= 3.3V
CC
V
= 3.6V
CC
8
L3 = 4.7nH
L3 = 0Ω, 4.7nH
7
V
= 3.0V
60
CC
6
-40
-15
10
35
85
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
TEMPERATURE (°C)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 13
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, P = 0dBm, P = -5dBm, LO is low-side injected for a 300MHz IF, T = +25°C, unless
LO RF C
CC
otherwise noted.)
3RF-3LO RESPONSE
vs. RF FREQUENCY
2RF-2LO RESPONSE
vs. RF FREQUENCY
75
70
65
60
55
50
45
75
70
65
60
55
50
45
P
= -5dBm
= 3.3V
CC
P
= -5dBm
= 3.3V
RF
RF
V
L3 = 0Ω
V
CC
MAX196
L3 = 0Ω
L3 = 4.7nH
L3 = 4.7nH
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
0
-10
-20
-30
-40
60
50
40
30
20
10
V
= 3.3V
V
= 3.3V
CC
CC
L3 = 0Ω
L3 = 4.7nH
L3 = 0Ω
L3 = 4.7nH
1700
1900
2100
2300
2500
2700
2000
2200
2400
2600
2800
3000
LO FREQUENCY (MHz)
RF FREQENCY (MHz)
14 ______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
Pin Description
PIN
NAME
FUNCTION
1, 6, 8, 14
V
Power Supply. Bypass to GND with 0.01µF capacitors as close as possible to the pin.
CC
Single-Ended 50Ω RF Input. Internally matched and DC shorted to GND through a balun. Requires
an input DC-blocking capacitor.
2
RF
3, 4, 5, 10,
12, 13, 17
Ground. Internally connected to the exposed pad. Connect all ground pins and the exposed pad
(EP) together.
GND
LO Amplifier Bias Control. Output bias resistor for the LO buffer. Connect a 604Ω 1% resistor
(230mA bias condition) from LOBIAS to ground.
7
LOBIAS
N.C.
9, 15
11
Not internally connected. Pins can be grounded.
Local Oscillator Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
LO
External Inductor Connection. Connect an inductor from this pin to ground to increase the RF-to-IF
and LO-to-IF isolation (see the Typical Operating Characteristics for typical performance vs. inductor
value).
16
LEXT
Mixer Differential IF Output. Connect pullup inductors from each of these pins to V (see the
CC
Typical Application Circuit).
18, 19
20
IF-, IF+
IFBIAS
EP
IF Amplifier Bias Control. IF bias resistor connection for the IF amplifier. Connect a 698Ω 1% resistor
(230mA bias condition) from IFBIAS to GND.
Exposed Pad. Internally connected to GND. Connect to a large ground plane using multiple vias to
maximize thermal and RF performance.
—
______________________________________________________________________________________ 15
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
Differential IF Output Amplifier
Detailed Description
The MAX19996 has an IF frequency range of 50MHz to
500MHz, where the low-end frequency depends on the
frequency response of the external IF components. The
MAX19996 mixer is tuned for a 450MHz IF using 120nH
external pullup bias inductors. Lower IFs of 350MHz
and 300MHz require higher inductor values of 270nH
and 470nH, respectively. The differential, open-collec-
tor IF output ports require these inductors to be con-
The MAX19996 high-linearity downconversion mixer
provides 8.7dB of conversion gain and +24.5dBm of
IIP3, with a typical 9.6dB noise figure. The integrated
baluns and matching circuitry allow for 50Ω single-
ended interfaces to the RF and the LO port. The inte-
grated LO buffer provides a high drive level to the
mixer core, reducing the LO drive required at the
MAX19996’s input to a -3dBm to +3dBm range. The IF
port incorporates a differential output, which is ideal for
providing enhanced 2RF-2LO performance.
nected to V
.
CC
MAX196
Note that these differential ports are ideal for providing
enhanced 2RF-2LO performance. Single-ended IF
applications require a 4:1 (impedance ratio) balun to
transform the 200Ω differential IF impedance to a 50Ω
single-ended system. Use the TC4-1W-17 4:1 trans-
former for IF frequencies above 200MHz and the
TC4-1W-7A 4:1 transformer for frequencies below
200MHz. The user can use a differential IF amplifier or
SAW filter on the mixer IF port, but a DC block is
required on both IF+/IF- ports to keep external DC from
entering the IF ports of the mixer.
Specifications are guaranteed over broad frequency
ranges to allow for use in WCS, LTE, WiMAX, and
MMDS base stations. The MAX19996 is specified to
operate over an RF input range of 2000MHz to
3000MHz, an LO range of 1800MHz to 2550MHz, and
an IF range of 50MHz to 500MHz. The external IF com-
ponents set the lower frequency range (see the Typical
Operating Characteristics for details). Operation
beyond these ranges is possible (see the Typical
Operating Characteristics for additional information).
Although this device is optimized for low-side LO injec-
tion applications, it can operate in high-side LO injec-
tion modes as well. However, performance degrades
Applications Information
Input and Output Matching
The RF and LO ports are designed to operate in a
50Ω system. Use DC blocks at the RF and LO inputs to
isolate the ports from external DC while providing some
reactive tuning. The IF output impedance is 200Ω (dif-
ferential). For evaluation, an external low-loss 4:1
(impedance-ratio) balun transforms this impedance
down to a 50Ω single-ended output (see the Typical
Application Circuit).
as f
continues to increase. For increased high-side
LO performance, refer to the MAX19996A data sheet.
LO
RF Port and Balun
The MAX19996 RF input provides a 50Ω match when
combined with a series 8.2pF DC-blocking capacitor.
This DC-blocking capacitor is required as the input is
internally DC shorted to ground through the on-chip
balun. The RF port input return loss is typically 15dB
over the RF frequency range of 2300MHz to 2800MHz.
Externally Adjustable Bias
Bias currents for the LO buffer and the IF amplifier are
optimized by fine-tuning resistors R1 and R2. The val-
ues for R1 and R2, as listed in Table 1, represent the
nominal values which yield the highest level of linearity
performance. Larger value resistors can be used to
reduce power dissipation at the expense of some per-
formance loss. Contact the factory for details concern-
ing recommended power reduction vs. performance
tradeoffs. If 1% resistors are not readily available,
5% resistors can be substituted.
LO Inputs, Buffer, and Balun
The MAX19996 is optimized for low-side LO injection
applications with an 1800MHz to 2550MHz LO frequen-
cy range. The LO input is internally matched to 50Ω,
requiring only a 2pF DC-blocking capacitor. A two-
stage internal LO buffer allows for a -3dBm to +3dBm
LO input power range. The on-chip low-loss balun,
along with an LO buffer, drives the double-balanced
mixer. All interfacing and matching components from
the LO inputs to the IF outputs are integrated on-chip.
Significant reductions in power consumption can also be
realized by operating the mixer with an optional supply
voltage of +3.3V. Doing so reduces the overall power
consumption by up to 57%. See the +3.3V Supply AC
Electrical Characteristics table and the relevant +3.3V
curves in the Typical Operating Characteristics section
to evaluate the power vs. performance tradeoffs.
High-Linearity Mixer
The core of the MAX19996 is a double-balanced, high-
performance passive mixer. Exceptional linearity is pro-
vided by the large LO swing from the on-chip LO
buffer. When combined with the integrated IF ampli-
fiers, the performance of IIP3, 2RF-2LO rejection, and
noise-figure is typically +24.5dBm, 69dBc, and 9.6dB,
respectively.
16 ______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
Table 1. Component Values
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
Murata Electronics North America, Inc.
Murata Electronics North America, Inc.
—
C1
1
4
0
1
2
1
8.2pF microwave capacitor (0402)
C2, C6, C8, C11
C3, C9
0.01µF microwave capacitors (0402)
Not installed, capacitors
C10
2pF microwave capacitor (0402)
1000pF microwave capacitors (0402)
82pF microwave capacitor (0402)
Murata Electronics North America, Inc.
Murata Electronics North America, Inc.
Murata Electronics North America, Inc.
C13, C14
C15
120nH wire-wound high-Q inductors* (0805)
(see the Typical Operating Characteristics)
L1, L2
L3
2
1
1
Coilcraft, Inc.
Coilcraft, Inc.
Digi-Key Corp.
4.7nH wire-wound high-Q inductor (0603)
698Ω 1% resistor (0402). Use for V
= +5.0V applications.
= +3.3V applications.
= +5.0V applications.
= +3.3V applications.
CC
R1
1.1kΩ 1% resistor (0402). Use for V
CC
CC
CC
604Ω 1% resistor (0402). Use for V
845Ω 1% resistor (0402). Use for V
0Ω resistor (1206)
R2
1
Digi-Key Corp.
R3
T1
U1
1
1
1
Digi-Key Corp.
4:1 IF balun TC4-1W-17*
Mini-Circuits
MAX19996 IC (20 TQFN)
Maxim Integrated Products, Inc.
*Use 470nH inductors and TC4-1W-7A 4:1 balun for IF frequencies below 200MHz.
to the lower-level ground planes. This method provides a
good RF/thermal-conduction path for the device. Solder
the exposed pad on the bottom of the device package to
the PCB. The MAX19996 evaluation kit can be used as a
reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.
LEXT Inductor
Short LEXT to ground using a 0Ω resistor. For applica-
tions requiring improved RF-to-IF and LO-to-IF isolation,
a 4.7nH low-ESR inductor can be connected from LEXT
to GND. However, the load impedance presented to the
mixer must be such that any capacitances from IF- and
IF+ to ground do not exceed several picofarads to
ensure stable operating conditions. Since approximate-
ly 120mA flows through LEXT, it is important to use a
low-DCR wire-wound inductor.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for high-
frequency circuit stability. Bypass each V
pin with
CC
the capacitors shown in the Typical Application Circuit
and see Table 1.
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF- and IF+ to
ground does not exceed several picofarads. For the best
performance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed pad
MUST be connected to the ground plane of the PCB. It is
suggested that multiple vias be used to connect this pad
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19996’s 20-pin thin
QFN package provides a low thermal-resistance path
to the die. It is important that the PCB on which the
MAX19996 is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a low-
inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.
______________________________________________________________________________________ 17
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
Typical Application Circuit
C15
C13
L1
L2
3
6
4
IF
OUTPUT
T1
2
1
R3
MAX196
C14
4:1
R1
L3
+5.0V
20
19
18
17
16
C3
C2
V
CC
N.C.
15
14
13
12
11
1
C1
RF
V
RF
INPUT
CC
MAX19996
+5.0V
2
3
4
5
C11
GND
GND
GND
GND
GND
LO
EP
C10
LO
INPUT
6
7
8
9
10
+5.0V
R2
C6
NOTE: PINS 3, 4, 5, 10, 12, 13, AND 17 ARE ALL INTERNALLY
CONNECTED TO THE EXPOSED GROUND PAD. CONNECT
THESE PINS TO GROUND TO IMPROVE ISOLATION.
C8
C9
+5.0V
PINS 9 AND 15 HAVE NO INTERNAL CONNECTION BUT CAN BE
EXTERNALLY GROUNDED TO IMPROVE ISOLATION.
18 ______________________________________________________________________________________
SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer
MAX196
Pin Configuration
Chip Information
PROCESS: SiGe BiCMOS
TOP VIEW
20
19
18
17
16
Package Information
For the latest package outline information and land patterns, go
V
15 N.C.
1
2
3
4
5
CC
to www.maxim-ic.com/packages.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
MAX19996
V
14
RF
GND
GND
GND
CC
20 Thin QFN-EP
T2055+3
21-0140
13 GND
12 GND
EP
11
LO
6
7
8
9
10
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 19
© 2008 Maxim Integrated Products
Maxim is a registered trademark of Maxim Integrated Products, Inc.
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