MAX19997AETX+TD [MAXIM]
RF/Microwave Up/Down Converter, BICMOS;
| 型号： | MAX19997AETX+TD |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | RF/Microwave Up/Down Converter, BICMOS |
| 文件： | 总35页 (文件大小：627K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-4288; Rev 3; 8/11
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
General Description
Features
o 1800MHz to 2900MHz RF Frequency Range
The MAX19997A dual downconversion mixer is a versa-
tile, highly integrated diversity downconverter that pro-
vides high linearity and low noise figure for a multitude of
1800MHz to 2900MHz base-station applications. The
MAX19997A fully supports both low- and high-side LO
injection architectures for the 2300MHz to 2900MHz
WiMAX™, LTE, WCS, and MMDS bands, providing
8.7dB gain, +24dBm input IP3, and 10.3dB NF in the
low-side configuration, and 8.7dB gain, +24dBm input
IP3, and 10.4dB NF in the high-side configuration. High-
side LO injection architectures can be further extended
down to 1800MHz with the addition of one tuning ele-
ment (a shunt inductor) on each RF port.
o 1950MHz to 3400MHz LO Frequency Range
o 50MHz to 550MHz IF Frequency Range
o Supports Both Low-Side and High-Side LO
Injection
o 8.7dB Conversion Gain
o +24dBm Input IP3
o 10.3dB Noise Figure
o +11.3dBm Input 1dB Compression Point
o 70dBc Typical 2 x 2 Spurious Rejection at
The device integrates baluns in the RF and LO ports,
an LO buffer, two double-balanced mixers, and a pair
of differential IF output amplifiers. The MAX19997A
requires a typical LO drive of 0dBm and a supply cur-
rent guaranteed below 420mA to achieve the targeted
linearity performance.
P
RF
= -10dBm
o Dual Channels Ideal for Diversity Receiver
Applications
o Integrated LO Buffer
o Integrated LO and RF Baluns for Single-Ended
The MAX19997A is available in a compact 6mm x 6mm,
36-pin thin QFN lead-free package with an exposed
pad. Electrical performance is guaranteed over the
Inputs
o Low -3dBm to +3dBm LO Drive
extended temperature range, from T = -40°C to +85°C.
C
o Pin Compatible with the MAX19999 3000MHz to
Applications
4000MHz Mixer
2.3GHz WCS Base Stations
o Pin Similar to the MAX9995/MAX9995A and
MAX19995/MAX19995A 1700MHz to 2200MHz
Mixers and the MAX9985/MAX9985A and
MAX19985/MAX19985A 700MHz to 1000MHz
Mixers
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
UMTS/WCDMA and cdma2000® 3G Base
Stations
o 42dB Channel-to-Channel Isolation
o Single +5.0V or +3.3V Supply
PCS1900 and EDGE Base Stations
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
o External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
Private Mobile Radios
Ordering Information
Military Systems
PART
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
36 Thin QFN-EP*
36 Thin QFN-EP*
MAX19997AETX+
MAX19997AETX+T
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
WiMAX is a trademark of WiMAX Forum.
Pin Configuration/Functional Block Diagram appears at
end of data sheet.
cdma2000 is a registered trademark of Telecommunications
Industry Association.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
CC
V
to GND...........................................................-0.3V to +5.5V
Operating Case Temperature Range
RF_, LO to GND.....................................................-0.3V to +0.3V
(Note 4) ...................................................T = -40°C to +85°C
C
IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
LO_ADJ_D to GND.................................-0.3V to (V
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
+ 0.3V)
CC
RF_, LO Input Power ......................................................+15dBm
RF_, LO Current (RF_ and LO is DC
shorted to GND through balun)................................... ...50mA
Continuous Power Dissipation (Note 1) ..............................8.7W
PACKAGE THERMAL CHARACTERISTICS
Junction-to-Ambient Thermal Resistance (θ
)
JA
Junction-to-Case Thermal Resistance (θ
)
JC
MX197A
(Notes 2, 3)...................................................................38°C/W
(Notes 1, 3)..................................................................7.4°C/W
Note 1: Based on junction temperature T = T + (θ x V x I ). This formula can be used when the temperature of the exposed
J
C
JC
CC
CC
pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction
temperature must not exceed +150°C.
Note 2: Junction temperature T = T + (θ x V
x I ). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
J
A
JA
CC
CC
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: T is the temperature on the exposed pad of the package. T is the ambient temperature of the device and PCB.
C
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1), no input RF or LO signals applied, V
= +4.75V to
CC
+5.25V, T = -40°C to +85°C. Typical values are at V = +5.0V, T = +25°C, unless otherwise noted. R1, R4 = 750Ω, R2, R5 = 698Ω.)
C
C
CC
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
5.25
420
UNITS
Supply Voltage
V
4.75
V
CC
V
V
= 5.0V
388
CC
CC
Total Supply Current
I
mA
mA
mA
mA
mA
mA
mA
mA
mA
CC
= 5.25V
390.4
V
(Pin 4) Supply Current
(Main and Diversity Paths)
CC
V
V
V
V
V
V
= 5.25V
= 5.25V
= 5.25V
= 5.25V
= 5.25V
= 5.25V
2.5
8.9
CC
CC
CC
CC
CC
CC
V
(Pin 10) Supply Current
(Diversity Path)
CC
V
(Pin 16) Supply Current
(Diversity Path)
CC
109.3
28.3
109.3
8.9
V
(Pin 21) Supply Current
(Main and Diversity Paths)
CC
V
(Pin 30) Supply Current
(Main Path)
CC
V
(Pin 36) Supply Current
(Main Path)
CC
IFM Bias Supply Current (Main
Path)
Total bias feeding IFM- and IFM+ through
R3, L1 and L2; V = 5.25V
61.6
61.6
CC
IFD Bias Supply Current
(Diversity Path)
Total bias feeding IFD+ and IFD- through
R6, L3 and L4; V = 5.25V
CC
2
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1), no input RF or LO signals applied, V
= +3.0V to
CC
+3.6V, T = -40°C to +85°C. Typical values are at V = +3.3V, T = +25°C, unless otherwise noted. R1, R4 = 1.1kΩ, R2, R5 = 845Ω.)
C
CC
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
3.3
MAX
3.6
UNITS
V
Supply Voltage
Supply Current
V
3.0
CC
CC
I
Total supply current, V
= +3.3V
279
310
mA
CC
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RF Frequency Without External
Tuning
f
RF
(Note 5)
2400
2900
MHz
See Table 2 for an outline of tuning elements
optimized for 1950MHz operation;
RF Frequency with External
Tuning
optimization at other frequencies within the
1800MHz to 2400MHz range can be
achieved with different component values;
contact the factory for details
f
1800
2400
MHz
MHz
RF
LO
LO Frequency
IF Frequency
LO Drive Level
f
(Notes 5, 6)
1950
100
3400
550
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Notes 5, 6)
f
MHz
dBm
IF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Notes 5, 6)
50
-3
250
+3
P
LO
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1), V
= +4.75V to +5.25V, RF and LO ports are driven
CC
from 50Ω sources, P = -3dBm to +3dBm, P = -5dBm, f = 2300MHz to 2900MHz, f = 2650MHz to 3250MHz, f = 350MHz,
LO
RF
RF
LO
IF
f
RF
< f , T = -40°C to +85°C. Typical values are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2600MHz, f = 2950MHz,
CC RF LO RF LO
LO
C
f
IF
= 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
C
PARAMETER
SYMBOL
CONDITIONS
MIN
8.1
TYP
MAX
UNITS
f
T
= 2400MHz to 2900MHz,
= +25°C (Notes 8, 9, 10)
RF
Conversion Gain
G
8.7
9.3
dB
C
C
f
RF
f
RF
f
RF
f
RF
f
RF
= 2305MHz to 2360MHz
= 2500MHz to 2570MHz
= 2570MHz to 2620MHz
= 2500MHz to 2690MHz
= 2700MHz to 2900MHz
0.15
0.15
0.1
Conversion Gain Flatness
dB
0.15
0.15
f
T
= 2300MHz to 2900MHz,
= -40°C to +85°C
RF
Gain Variation Over Temperature
TC
-0.01
dB/°C
CG
C
_______________________________________________________________________________________
3
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1), V
= +4.75V to +5.25V, RF and LO ports are driven
CC
from 50Ω sources, P = -3dBm to +3dBm, P = -5dBm, f = 2300MHz to 2900MHz, f = 2650MHz to 3250MHz, f = 350MHz,
LO
RF
RF
LO
IF
f
RF
< f , T = -40°C to +85°C. Typical values are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2600MHz, f = 2950MHz,
CC RF LO RF LO
LO
C
f
IF
= 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
C
PARAMETER
SYMBOL
IP
CONDITIONS
MIN
TYP
MAX
UNITS
Input Compression Point
(Notes 8, 9, 11)
9.6
11.3
dBm
1dB
f
- f = 1MHz, P = -5dBm per tone
RF1 RF2
RF
22.0
24
(Notes 8, 9)
MX197A
Third-Order Input Intercept Point
IIP3
dBm
dBm
dB
f
P
= 2600MHz, f
- f
= 1MHz,
RF
RF1 RF2
= -5dBm per tone, T = +25°C
C
22.5
24
RF
(Notes 8, 9)
Third-Order Input Intercept Point
Variation Over Temperature
f
- f = 1MHz, T = -40°C to +85°C
0.3
RF1 RF2
C
Single sideband, no blockers present
= 2400MHz to 2900MHz (Notes 6, 8, 10)
10.4
12.5
11.4
f
RF
Noise Figure
NF
SSB
Single sideband, no blockers present,
= 2400MHz to 2900MHz , T = +25°C
f
RF
10.4
0.018
22.5
C
(Note 6, 8, 10)
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
T
TC
dB/°C
dB
NF
= -40°C to +85°C
C
f
f
= 2412MHz, P
= 8dBm,
BLOCKER
BLOCKER
Noise Figure Under Blocking
Conditions
= 2600MHz, f = 2950MHz, P
=
NF
25
RF
LO
LO
B
0dBm, V = +5.0V, T = +25°C (Notes 8, 12)
CC
C
f
RF
= 2600MHz, f = 2950MHz,
LO
P
= -10dBm, f
= f - 175MHz
62
57
73
63
69
64
84
74
RF
SPUR
LO
(Note 8)
2LO - 2RF Spur
2 x 2
dBc
dBc
f
RF
= 2600MHz, f = 2950MHz,
LO
P
= -5dBm, f
= f - 175MHz
RF
SPUR LO
(Notes 8, 9)
f
RF
= 2600MHz, f = 2950MHz,
LO
P
= -10dBm, f
= f - 116.67MHz,
RF
SPUR LO
T
= +25°C (Note 8)
C
3LO - 3RF Spur
3 x 3
f
RF
= 2600MHz, f = 2950MHz,
LO
P
= -5dBm, f
= f - 116.67MHz,
RF
SPUR LO
T
C
= +25°C (Notes 8, 9)
LO on and IF terminated into a matched
impedance
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
14
13
dB
dB
Ω
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
Z
200
IF
4
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1), V
= +4.75V to +5.25V, RF and LO ports are driven
CC
from 50Ω sources, P = -3dBm to +3dBm, P = -5dBm, f = 2300MHz to 2900MHz, f = 2650MHz to 3250MHz, f = 350MHz,
LO
RF
RF
LO
IF
f
RF
< f , T = -40°C to +85°C. Typical values are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2600MHz, f = 2950MHz,
CC RF LO RF LO
LO
C
f
IF
= 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
IF Output Return Loss
21
dB
RF-to-IF Isolation
25
-28
dB
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
(Notes 8, 9)
dBm
dBm
dBm
-33
-18.5
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω
Channel Isolation
38.5
43
dB
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1), V
= +4.75V to +5.25V, RF and LO ports are driven
CC
from 50Ω sources, P = -3dBm to +3dBm, P = -5dBm, f = 2300MHz to 2900MHz, f = 1950MHz to 2550MHz, f = 350MHz,
LO
RF
RF
LO
IF
f
f
> f , T = -40°C to +85°C. Typical values are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2600MHz, f = 2250MHz,
RF
IF
LO
C
CC RF LO RF LO
= 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
C
PARAMETER
Conversion Gain
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
f
T
= 2400MHz to 2900MHz,
= +25°C (Notes 8, 9, 10)
RF
G
8.1
8.7
9.3
dB
C
C
f
RF
f
RF
f
RF
f
RF
f
RF
= 2305MHz to 2360MHz
= 2500MHz to 2570MHz
= 2570MHz to 2620MHz
= 2500MHz to 2690MHz
= 2700MHz to 2900MHz
0.2
0.15
0.2
Conversion Gain Flatness
dB
0.25
0.25
f
= 2300MHz to 2900MHz, T = -40°C to
C
RF
Gain Variation Over Temperature
Input Compression Point
TC
-0.01
11.3
23
dB/°C
dBm
dBm
CG
+85°C
IP
(Notes 6, 8, 11)
9.6
1dB
f
- f
= 1MHz, P = -5dBm per tone
RF1 RF2 RF
21.6
(Notes 8, 9)
Third-Order Input Intercept Point
IIP3
f
RF
= 2600MHz, f
- f
= 1MHz,
RF1 RF2
P
= -5dBm per tone, T = +25°C
C
22
23.8
0.3
dBm
dBm
RF
(Notes 8, 9)
Third-Order Input Intercept Point
Variation Over Temperature
f
- f = 1MHz, T = -40°C to +85°C
RF1 RF2
C
_______________________________________________________________________________________
5
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1), V
= +4.75V to +5.25V, RF and LO ports are driven
CC
from 50Ω sources, P = -3dBm to +3dBm, P = -5dBm, f = 2300MHz to 2900MHz, f = 1950MHz to 2550MHz, f = 350MHz,
LO
RF
RF
LO
IF
f
f
> f , T = -40°C to +85°C. Typical values are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2600MHz, f = 2250MHz,
RF
IF
LO
C
CC RF LO RF LO
= 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Single sideband, no blockers present
= 2400MHz to 2900MHz (Notes 6, 8)
10.3
13.0
f
RF
Noise Figure
NF
dB
SSB
Single sideband, no blockers present,
= 2400MHz to 2900MHz, T = +25°C
MX197A
f
RF
10.3
11.3
C
(Notes 6, 8)
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
TC
0.018
dB/°C
dB
NF
T
C
= -40°C to +85°C
f
f
= 2793MHz, P
= 2600MHz, f = 2250MHz,
LO
= 8dBm,
BLOCKER
BLOCKER
Noise Figure Under Blocking
Conditions
RF
NF
22
25
B
P
= 0dBm, V = +5.0V, T = +25°C
CC C
LO
(Notes 6, 8, 12)
f
RF
= 2600MHz, f = 2250MHz,
LO
P
= -10dBm, f
= +25°C (Note 8)
= f + 175MHz,
62
57
78
68
67
62
83
73
RF
SPUR LO
T
C
2RF - 2LO Spur
2 x 2
dBc
dBc
f
RF
= 2600MHz, f = 2250MHz,
LO
P
= -5dBm, f
= f + 175MHz,
RF
SPUR LO
T
C
= +25°C (Notes 8, 9)
f
RF
= 2600MHz, f = 2250MHz,
LO
P
= -10dBm, f
= f + 116.67MHz,
RF
SPUR LO
T
= +25°C (Note 8)
C
3RF - 3LO Spur
3 x 3
f
RF
= 2600MHz, f = 2250MHz,
LO
P
= -5dBm, f
= f + 116.67MHz,
RF
SPUR LO
T
C
= +25°C (Notes 8, 9)
LO on and IF terminated into a matched
impedance
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
16
dB
dB
Ω
RF and IF terminated into a matched
impedance
11.5
200
Nominal differential impedance at the IC’s
IF outputs
Z
IF
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
IF Output Return Loss
20
dB
6
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1), V
= +4.75V to +5.25V, RF and LO ports are driven
CC
from 50Ω sources, P = -3dBm to +3dBm, P = -5dBm, f = 2300MHz to 2900MHz, f = 1950MHz to 2550MHz, f = 350MHz,
LO
RF
RF
LO
IF
f
f
> f , T = -40°C to +85°C. Typical values are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 2600MHz, f = 2250MHz,
RF
IF
LO
C
CC RF LO RF LO
= 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
C
PARAMETER
RF-to-IF Isolation
SYMBOL
CONDITIONS
MIN
TYP
23.5
-31
MAX
UNITS
dB
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
(Notes 8, 9)
-24
dBm
dBm
dBm
-27
-9.6
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω (Notes 8, 9)
Channel Isolation
38.5
42
dB
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1). Typical values are at V
= +3.3V, P = -5dBm,
CC
RF
P
LO
= 0dBm, f = 2600MHz, f = 2250MHz, f = 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
RF LO IF C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
G
(Note 9)
8.5
0.2
dB
C
f
RF
f
RF
f
RF
f
RF
f
RF
= 2305MHz to 2360MHz
= 2500MHz to 2570MHz
= 2570MHz to 2620MHz
= 2500MHz to 2690MHz
= 2700MHz to 2900MHz
0.15
0.15
0.25
0.15
Conversion Gain Flatness
dB
f
T
= 2300MHz to 2900MHz,
= -40°C to +85°C
RF
Gain Variation Over Temperature
TC
-0.01
dB/°C
CG
C
Input Compression Point
IP
7.7
dBm
dBm
1dB
Third-Order Input Intercept Point
IIP3
f
f
- f
= 1MHz, P = -5dBm per tone
19.7
RF1 RF2
RF
Third-Order Input Intercept
Variation Over Temperature
- f
= 1MHz, T = -40°C to +85°C
0.5
9.7
dBm
dB
RF1 RF2
C
Noise Figure
NF
Single sideband, no blockers present
Single sideband, no blockers present,
T
SSB
Noise Figure Temperature
Coefficient
TC
0.018
dB/°C
NF
= -40°C to +85°C
C
_______________________________________________________________________________________
7
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1). Typical values are at V
= +3.3V, P = -5dBm,
CC
RF
P
LO
= 0dBm, f = 2600MHz, f = 2250MHz, f = 350MHz, T = +25°C, unless otherwise noted.) (Note 7)
RF LO IF C
PARAMETER
SYMBOL
CONDITIONS
= -10dBm, f = f + 175MHz
MIN
TYP
MAX
UNITS
P
P
P
P
74
69
74
64
RF
RF
RF
RF
SPUR
LO
2RF - 2LO Spur
2 x 2
dBc
= -5dBm, f
= f + 175MHz
LO
SPUR
= -10dBm, f
= f + 116.67MHz
LO
SPUR
3RF - 3LO Spur
3 x 3
dBc
dB
dB
Ω
= -5dBm, f
= f + 116.67MHz
LO
SPUR
MX197A
LO on and IF terminated into a matched
impedance
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
16
11
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
Z
200
IF
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
IF Output Return Loss
26
dB
RF-to-IF Isolation
25
-36
dB
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
dBm
dBm
dBm
-31
-13.5
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω
Channel Isolation
42
dB
Note 5: Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating
Characteristics.
Note 6: Not production tested.
Note 7: All limits reflect losses of external components, including a 0.8dB loss at f = 350MHz due to the 4:1 impedance trans-
IF
former. Output measurements taken at the IF outputs of Typical Application Circuit.
Note 8: Guaranteed by design and characterization.
Note 9: 100% production tested for functional performance.
Note 10: RF frequencies below 2400MHz require external RF tuning similar to components listed in Table 2.
Note 11: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 12: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
8
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics
(Typical Application Circuit, standard RF band (see Table 1), V = +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
CC
LO
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
11
10
9
11
10
9
11
10
9
T
= -30°C
C
8
8
8
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
= +25°C
C
7
7
7
T
= +85°C
C
6
6
6
2200
2400
2600
2800
3000
3000
3000
2200
2200
2200
2400
2600
2800
3000
3000
3000
2200
2200
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
26
25
24
23
22
26
25
24
23
22
26
25
24
23
22
P
= -5dBm/TONE
P
= -5dBm/TONE
RF
P
= -5dBm/TONE
RF
RF
T
= +85°C
C
V
= 5.25V
CC
T
= +25°C
C
V
= 5.0V
CC
V
= 4.75V
P
= -3dBm, 0dBm, +3dBm
CC
LO
T
= -30°C
C
2200
2400
2600
2800
2400
2600
2800
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
= +25°C
C
T
= -30°C
C
8
8
8
7
7
7
2200
2400
2600
2800
2400
2600
2800
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
9
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
80
70
60
50
80
70
60
50
80
70
60
50
P
= -5dBm
P
= -5dBm
RF
P
= -5dBm
RF
RF
P
= +3dBm
LO
T
= +85°C
C
MX197A
T
= +25°C
C
P
= 0dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm
LO
T
= -30°C
C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
95
85
75
65
55
95
85
75
65
55
95
85
75
65
55
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
T
= -30°C
C
V
= 4.75V, 5.0V, 5.25V
CC
T
= +25°C, +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
(LO > RF, STANDARD RF BAND)
vs. RF FREQUENCY
INPUT P
(LO > RF, STANDARD RF BAND)
vs. RF FREQUENCY
INPUT P
(LO > RF, STANDARD RF BAND)
vs. RF FREQUENCY
1dB
1dB
1dB
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
V
= 5.0V
CC
T
= +85°C
C
V
= 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C
V
= 4.75V
2600
C
CC
T
= -30°C
C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
10 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
60
55
50
45
40
35
30
60
60
55
50
45
40
35
30
55
50
45
40
35
30
V = 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= -30°C, +25°C, +85°C
C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
0
0
-10
-20
-30
-40
0
P
= -3dBm, 0dBm, +3dBm
LO
-10
-20
-30
-40
-10
-20
-30
-40
T
= -30°C
C
V
= 4.75V, 5.0V, 5.25V
CC
T
= +25°C, +85°C
C
2550
2750
2950
3150
3350
2550
2750
2950
3150
3350
2550
2750
2950
3150
3350
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
40
30
20
10
40
30
20
10
40
30
20
10
V = 4.75V, 5.0V, 5.25V
CC
T
= +85°C
P
= -3dBm, 0dBm, +3dBm
LO
C
T
= -30°C
C
T
= +25°C
C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 11
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
-10
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
-10
-10
-20
-30
-40
-50
T
= -30°C, +25°C, +85°C
C
-20
-30
-40
-50
-20
-30
-40
-50
MX197A
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
-10
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
-10
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
-10
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
T
= -30°C, +25°C, +85°C
C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
12 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
RF PORT RETURN LOSS vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, STANDARD RF BAND)
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, STANDARD RF BAND)
0
0
0
5
f
= 2600MHz
f
= 350MHz
LO
IF
5
5
10
15
20
25
30
f
= 2350MHz
10
15
20
25
30
10
15
20
25
30
LO
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
f
= 2600MHz
230
f
= 2950MHz
LO
LO
2200
2400
2600
2800
3000
50
140
230
320
410
500
50
140
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
SUPPLY CURRENT vs. TEMPERATURE (T )
C
(LO > RF, STANDARD RF BAND)
0
5
400
390
380
370
360
350
V
= 5.25V
CC
P
= +3dBm
LO
10
15
20
25
V
= 5.0V
CC
P
= 0dBm
LO
P
= -3dBm
LO
V
= 4.75V
CC
1900 2150 2400 2650 2900 3150 3400
LO FREQUENCY (MHz)
-35
-15
5
25
45
65
85
TEMPERATURE (°C)
______________________________________________________________________________________ 13
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, extended RF band (see Table 2), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
11
10
9
11
10
9
11
10
9
T
C
= -30°C
MX197A
8
8
8
P
LO
= -3dBm, 0dBm, +3dBm
V
CC
= 4.75V, 5.0V, 5.25V
T
C
= +85°C
7
7
7
T
C
= +25°C
6
6
6
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
INPUT IP3 vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
INPUT IP3 vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
26
25
24
23
22
26
25
24
23
22
26
25
24
23
22
P
= -5dBm/TONE
P
RF
= -5dBm/TONE
P
= -5dBm/TONE
RF
RF
T
C
= +85°C
V
= 5.25V
CC
T
C
= +25°C
V
CC
= 5.0V
V
= 4.75V
P
LO
= -3dBm, 0dBm, +3dBm
CC
T
C
= -30°C
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
C
= +85°C
V = 4.75V, 5.0V, 5.25V
CC
T
C
= +25°C
P
= -3dBm, 0dBm, +3dBm
8
8
LO
8
T
C
= -30°C
7
7
7
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
14 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, extended RF band (see Table 2), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
70
60
50
40
70
60
50
40
70
60
50
40
P
RF
= -5dBm
P
= -5dBm
RF
P
= -5dBm
RF
T
C
= +85°C
T
C
= +25°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= -30°C
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
95
85
75
65
55
95
85
75
65
55
95
85
75
65
55
P
= -5dBm
P
= -5dBm
RF
P
RF
= -5dBm
RF
T
C
= -30°C
P
LO
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= +25°C, +85°C
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
(LO > RF, EXTENDED RF BAND)
vs. RF FREQUENCY
INPUT P
(LO > RF, EXTENDED RF BAND)
vs. RF FREQUENCY
INPUT P
(LO > RF, EXTENDED RF BAND)
vs. RF FREQUENCY
1dB
1dB
1dB
13
12
11
13
12
11
13
12
11
T
C
= +85°C
V
CC
= 5.25V
V
= 5.0V
CC
P
= -3dBm, 0dBm, +3dBm
LO
10
9
10
9
10
9
T
C
= +25°C
V
CC
= 4.75V
T
C
= -30°C
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 15
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, extended RF band (see Table 2), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
60
60
60
55
50
55
50
55
50
MX197A
45
40
35
30
45
40
35
30
45
40
35
30
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
T
= -30°C, +25°C, +85°C
LO
C
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
0
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
0
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
0
-10
-20
-30
-10
-20
-30
-10
-20
-30
P
= -3dBm, 0dBm, +3dBm
V
CC
= 4.75V, 5.0V, 5.25V
LO
T
C
= -30°C, +25°C, +85°C
2150
2250
2350
2450
2550
2650
2150
2250
2350
2450
2550
2650
2150
2250
2350
2450
2550
2650
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
30
20
30
20
30
20
V = 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= +85°C
T
= +25°C
C
T
C
= -30°C
10
10
10
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
1800
1900
2000
2100
2200
2300
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
16 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, extended RF band (see Table 2), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
P
LO
= -3dBm, 0dBm, +3dBm
V
CC
= 4.75V, 5.0V, 5.25V
T
C
= -30°C, +25°C, +85°C
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
-10
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
-10
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
-10
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
T
C
= -30°C, +25°C, +85°C
P
LO
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
______________________________________________________________________________________ 17
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, extended RF band (see Table 2), V
= +5.0V, LO is high-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
RF PORT RETURN LOSS vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, EXTENDED RF BAND)
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, EXTENDED RF BAND)
0
0
0
f
IF
= 350MHz
f
LO
= 2600MHz
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
f
LO
= 2350MHz
V
= 4.75V, 5.0V, 5.25V
CC
MX197A
P
= -3dBm, 0dBm, +3dBm
LO
f
LO
= 2600MHz
f
LO
= 2950MHz
410 500
1800
1900
2000
2100
2200
2300
50
140
230
320
410
500
50
140
230
320
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SUPPLY CURRENT vs. TEMPERATURE (T )
C
LO PORT RETURN LOSS vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
(LO > RF, EXTENDED RF BAND)
400
0
V
= 5.25V
CC
P
= +3dBm
LO
390
380
5
10
370
360
350
15
20
25
V
= 5.0V
CC
P
= -3dBm
LO
P
LO
= 0dBm
V
= 4.75V
CC
-35
-15
5
25
45
65
85
1900 2150 2400 2650 2900 3150 3400
LO FREQUENCY (MHz)
TEMPERATURE (°C)
18 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CONVERSION GAIN vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
11
11
11
T
C
= -30°C
10
9
10
9
10
9
8
7
6
8
7
6
8
7
6
P
LO
= -3dBm, 0dBm, +3dBm
T
C
= +25°C
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= +85°C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
INPUT IP3 vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
INPUT IP3 vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
26
26
25
26
P = -5dBm/TONE
RF
P
= -5dBm/TONE
P
= -5dBm/TONE
RF
RF
T
C
= +85°C
25
24
23
22
25
24
23
22
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C
C
24
23
V
CC
= 4.75V, 5.0V, 5.25V
T
C
= -30°C
22
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
C
= +85°C
V
CC
= 4.75V, 5.0V, 5.25V
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= +25°C
8
8
8
T
C
= -30°C
7
7
7
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 19
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
2RF - 2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
2RF - 2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
2RF - 2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
80
70
60
50
80
70
60
50
80
70
60
50
P
= -5dBm
RF
P
= -5dBm
P
= -5dBm
RF
RF
T
C
= +85°C
P
LO
= 0dBm
P
LO
= +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
MX197A
T
C
= -30°C
P
LO
= -3dBm
2800
T
C
= +25°C
2200
2400
2600
2800
3000
2200
2400
2600
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
3RF - 3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
3RF - 3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
95
85
75
65
55
95
85
75
95
85
75
P
= -5dBm
P = -5dBm
RF
RF
P
RF
= -5dBm
65
55
65
55
V
= 4.75V, 5.0V, 5.25V
2600
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= -30°C, +25°C, +85°C
C
2200
2400
2600
2800
3000
2200
2400
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
(RF > LO, STANDARD RF BAND)
vs. RF FREQUENCY
INPUT P
(RF > LO, STANDARD RF BAND)
vs. RF FREQUENCY
1dB
INPUT P
(RF > LO, STANDARD RF BAND)
vs. RF FREQUENCY
1dB
1dB
13
12
11
13
12
11
13
12
11
V
= 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= +85°C
V
CC
= 5.0V
10
9
10
9
10
9
T
= -30°C
C
V
= 4.75V
T
C
= +25°C
CC
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
20 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CHANNEL ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
55
50
45
40
35
30
55
50
45
40
35
30
55
50
45
40
35
30
P
LO
= -3dBm, 0dBm, +3dBm
V
CC
= 4.75V, 5.0V, 5.25V
T
C
= -30°C, +25°C, +85°C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
0
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
0
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
0
-10
-10
-10
T
= -30°C, +25°C, +85°C
C
P
LO
= -3dBm, 0dBm, +3dBm
V
CC
= 4.75V, 5.0V, 5.25V
-20
-30
-20
-30
-20
-30
1850
2050
2250
2450
2650
1850
2050
2250
2450
2650
1850
2050
2250
2450
2650
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
30
30
30
T
C
= +85°C
20
10
20
10
20
10
T
= +25°C
C
V
= 4.75V, 5.0V, 5.25V
CC
P
LO
= -3dBm, 0dBm, +3dBm
T
= -30°C
C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 21
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
MX197A
V
CC
= 4.75V, 5.0V, 5.25V
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= -30°C, +25°C, +85°C
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
-10
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
-10
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
-10
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
= -30°C, +25°C, +85°C
C
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
22 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
RF PORT RETURN LOSS vs. RF FREQUENCY
IF PORT RETURN LOSS vs. IF FREQUENCY
(RF > LO, STANDARD RF BAND)
IF PORT RETURN LOSS vs. IF FREQUENCY
(RF > LO, STANDARD RF BAND)
(RF > LO, STANDARD RF BAND)
0
0
5
0
5
f
= 350MHz
f
LO
= 2250MHz
IF
5
V
= 4.75V, 5.0V, 5.25V
CC
f
= 2250MHz
LO
10
10
10
f
LO
= 2650MHz
15
20
25
30
15
20
25
30
15
20
25
30
f
LO
= 1850MHz
P
= -3dBm, 0dBm, +3dBm
LO
2200
2400
2600
2800
3000
50
140
230
320
410
500
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
SUPPLY CURRENT vs. TEMPERATURE (T )
C
(RF > LO, STANDARD RF BAND)
0
5
400
390
380
V
= 5.25V
CC
P
= +3dBm
LO
10
15
20
25
370
360
350
P
= -3dBm
LO
P
= 0dBm
V
= 5.0V
LO
CC
V
= 4.75V
CC
1900 2150 2400 2650 2900 3150 3400
LO FREQUENCY (MHz)
-35
-15
5
25
45
65
85
TEMPERATURE (°C)
______________________________________________________________________________________ 23
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CONVERSION GAIN vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CONVERSION GAIN vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
11
10
9
11
10
9
11
10
9
V
= 3.3V
V
CC
= 3.3V
CC
T
C
= -30°C
T
C
= +25°C
MX197A
8
8
8
P
LO
= -3dBm, 0dBm, +3dBm
7
7
7
V
CC
= 3.0V, 3.3V, 3.6V
T
C
= +85°C
6
6
6
5
5
5
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
3000
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
INPUT IP3 vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
INPUT IP3 vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
22
21
20
19
18
17
22
21
20
19
18
17
22
21
20
19
18
17
V
= 3.3V
V
= 3.3V
CC
P
= -5dBm/TONE
P
= -5dBm/TONE
P
RF
= -5dBm/TONE
CC
RF
RF
T
C
= +85°C
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C
C
V
= 3.0V, 3.3V, 3.6V
CC
T
C
= -30°C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
NOISE FIGURE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
13
12
11
10
13
12
11
10
13
12
11
10
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85°C
9
8
9
8
9
8
V
CC
= 3.0V, 3.3V, 3.6V
2600 2800
P = -3dBm, 0dBm, +3dBm
LO
T
C
= +25°C
T
= -30°C
C
7
7
7
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
24 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
2RF - 2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
2RF - 2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
2RF - 2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
90
80
70
90
80
70
90
80
70
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
V
= 3.3V
V
CC
= 3.3V
RF
RF
CC
T
C
= -30°C
P
= +3dBm
LO
V
= 3.6V
CC
P
= 0dBm
LO
V
= 3.3V
CC
60
50
60
50
60
50
T
C
= +25°C
T
C
= +85°C
P
= -3dBm
LO
V
= 3.0V
CC
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
3RF - 3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
3RF - 3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
95
85
75
65
55
45
95
85
75
65
55
45
95
85
75
65
55
45
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
V
= 3.3V
V
= 3.3V
CC
CC
V
= 3.0V, 3.3V, 3.6V
CC
P
LO
= -3dBm, 0dBm, +3dBm
T
C
= -30°C, +25°C, +85°C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
(RF > LO, STANDARD RF BAND)
vs. RF FREQUENCY
INPUT P
(RF > LO, STANDARD RF BAND)
vs. RF FREQUENCY
INPUT P
(RF > LO, STANDARD RF BAND)
vs. RF FREQUENCY
1dB
1dB
1dB
10
9
10
9
10
9
V
= 3.3V
V
CC
= 3.3V
CC
T
C
= +85°C
V
CC
= 3.3V
V
CC
= 3.6V
P
= -3dBm, 0dBm, +3dBm
LO
8
8
8
7
7
7
T
C
= +25°C
V
= 3.0V
CC
6
6
6
T
C
= -30°C
5
5
5
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 25
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
CHANNEL ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
CHANNEL ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
55
50
45
40
35
30
55
50
45
40
35
30
55
50
45
40
35
30
V
= 3.3V
V
= 3.3V
CC
CC
MX197A
P
LO
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
2600
T
C
= -30°C, +25°C, +85°C
CC
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
0
0
0
V
= 3.3V
V
CC
= 3.3V
CC
T
C
= -30°C
-10
-10
-10
-20
-30
-20
-30
-20
-30
T
C
= +85°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.0V, 3.3V, 3.6V
CC
T
C
= +25°C
1850
2050
2250
2450
2650
1850
2050
2250
2450
2650
1850
2050
2250
2450
2650
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85°C
V
CC
= 3.0V, 3.3V, 3.6V
T
C
= +25°C
P
LO
= -3dBm, 0dBm, +3dBm
T
C
= -30°C
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
26 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
V
= 3.3V
V
CC
= 3.3V
CC
-20
-30
-40
-50
T
C
= -30°C, +25°C, +85°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.0V, 3.3V, 3.6V
CC
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
V
= 3.3V
V
= 3.3V
CC
CC
-20
-30
-40
-50
V
CC
= 3.0V, 3.3V, 3.6V
P
LO
= -3dBm, 0dBm, +3dBm
T
C
= -30°C, +25°C, +85°C
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
1900
2100
2300
2500
2700
2900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
______________________________________________________________________________________ 27
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, standard RF band (see Table 1), V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm,
LO
CC
P
RF
= -5dBm, T = +25°C, unless otherwise noted.)
C
RF PORT RETURN LOSS vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
IF PORT RETURN LOSS vs. IF FREQUENCY
(RF > LO, STANDARD RF BAND)
IF PORT RETURN LOSS vs. IF FREQUENCY
(RF > LO, STANDARD RF BAND)
0
0
10
20
30
40
0
10
20
30
40
V
= 3.3V
f
= 350MHz
f
LO
= 2250MHz
V
= 3.3V
CC
CC
IF
5
P
= -3dBm, 0dBm, +3dBm
LO
f
LO
= 2650MHz
10
15
20
25
30
MX197A
f
LO
= 1850MHz
V
= 3.0V, 3.3V, 3.6V
CC
f
= 2250MHz
LO
2200
2400
2600
2800
3000
50
140
230
320
410
500
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS vs. LO FREQUENCY
(RF > LO, STANDARD RF BAND)
SUPPLY CURRENT vs. TEMPERATURE (T )
C
(RF > LO, STANDARD RF BAND)
0
300
V
= 3.3V
CC
V
= 3.6V
CC
P
= +3dBm
LO
290
280
270
260
250
5
10
V
= 3.3V
CC
15
20
25
P
= -3dBm
LO
P
= 0dBm
LO
V
= 3.0V
5
CC
1900 2150 2400 2650 2900 3150 3400
LO FREQUENCY (MHz)
-35
-15
25
45
65
85
TEMPERATURE (°C)
28 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Pin Description
PIN
NAME
FUNCTION
Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking
capacitor.
1
RFMAIN
2, 5, 6, 8, 12, 15,
18, 23, 28, 31, 34
GND
GND
Ground. Not internally connected. Ground these pins or leave unconnected.
Ground. Internally connected to the exposed pad. Connect all ground pins and the
exposed pad (EP) together.
3, 7, 20, 22, 24–27
4, 10, 16, 21, 30,
36
Power Supply. Connect bypass capacitors as close as possible to the pin (see the
Typical Application Circuit).
V
CC
9
RFDIV
Diversity Channel RF Input. Internal matched to 50Ω. Requires a DC-blocking capacitor.
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the
bias current for the diversity IF amplifier.
11
IFD_SET
Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins
13, 14
17
IFD+, IFD-
LO_ADJ_D
LO
to V
(see the Typical Application Circuit).
CC
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the
bias current for the diversity LO amplifier.
Local Oscillator Input. This input is internally matched to 50Ω. Requires an input DC-
blocking capacitor.
19
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the main LO amplifier.
29
LO_ADJ_M
IFM-, IFM+
IFM_SET
Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to
32, 33
35
V
(see the Typical Application Circuit).
CC
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the main IF amplifier.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that
uses multiple ground vias to provide heat transfer out of the device into the PCB ground
planes. These multiple ground vias are also required to achieve the noted RF performance.
—
EP
The integrated LO buffer provides a high drive level to
Detailed Description
the mixer core, reducing the LO drive required at the
MAX19997A’s input to a range of -3dBm to +3dBm. The
IF port incorporates a differential output, which is ideal
for providing enhanced 2RF - 2LO (low-side injection)
and 2LO - 2RF (high-side injection) performance.
The MAX19997A dual, downconversion mixer provides
high linearity and low noise figure for a multitude of
1800MHz to 2900MHz base-station applications. The
device fully supports both low-side and high-side LO
injection architectures for the 2300MHz to 2900MHz
WiMAX, LTE, WCS, and MMDS bands. WCDMA,
cdma2000, and PCS1900 applications utilizing high-
side LO injection architectures are also supported by
adding one additional tuning element (a shunt inductor)
on each RF port.
RF Input and Balun
The MAX19997A’s two RF inputs (RFMAIN and RFDIV)
provide a 50Ω match when combined with a series DC-
blocking capacitor. This DC-blocking capacitor is
required as the input is internally DC shorted to ground
through each channel’s on-chip balun. When using a
22pF DC-blocking capacitor, the RF port input return
loss is typically 15dB over the RF frequency range of
2600MHz to 2900MHz.
The MAX19997A operates over an LO range of
1950MHz to 3400MHz and an IF range of 50MHz to
550MHz. Integrated baluns and matching circuitry allow
50Ω single-ended interfaces to the RF and LO ports.
______________________________________________________________________________________ 29
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
The MAX19997A’s RF range can be further extended
down to 1800MHz by adding one additional tuning ele-
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50Ω. No
matching components are required for RF frequencies
ranging from 2400MHz to 2900MHz. RF and LO inputs
require only DC-blocking capacitors for interfacing.
ment on each RF port. For 1950MHz RF applications,
connect a 12nH shunt inductor from pins 1 and 9 to
ground. Also, change the value of the DC-blocking
capacitors (C1 and C8) from 22pF to 1pF. See the
Typical Application Circuit for details.
If desired, the RF band can be extended down to
1800MHz by adding two external matching compo-
nents on each RF port. See the Typical Application
Circuit and Table 2 for details.
LO Input, Buffer, and Balun
A two-stage internal LO buffer allows a wide input
power range for the LO drive. All guaranteed specifica-
tions are for an LO signal power from -3dBm to +3dBm.
The on-chip low-loss balun, along with an LO buffer,
drives the double-balanced mixer. All interfacing and
matching components from the LO input to the IF out-
puts are integrated on-chip.
MX197A
The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance down to a 50Ω single-
ended output (see the Typical Application Circuit).
Reduced-Power Mode
Each channel of the MAX19997A has two pins
(LO_ADJ_ _, IF_ _SET) that allow external resistors to set
the internal bias currents. Nominal values for these
resistors are shown in Tables 1 and 2. Larger-value
resistors can be used to reduce power dissipation at the
expense of some performance loss. If 1% resistors are
not readily available, 5% resistors may be substituted.
High-Linearity Mixer
The core of the MAX19997A is a pair of double-
balanced, high-performance passive mixers.
Exceptional linearity is provided by the large LO swing
from the on-chip LO buffer. When combined with the
integrated IF amplifiers, the cascaded IIP3, 2RF - 2LO
rejection, and NF performance are typically +24dBm
IIP3, -67dBc, and 10.3dB, respectively for low-side LO
injection architectures covering the 2300MHz to
2900MHz band. Cascaded performance levels are
comparable for high-side LO injection architectures;
IIP3, 2LO - 2RF rejection, and NF levels are typically
rated at +24dBm IIP3, -73dBc, and 10.4dB, respective-
ly over the same 2300MHz to 2900MHz band.
Significant reductions in power consumption can be
realized by operating the mixer with an optional supply
voltage of +3.3V. Doing so reduces the overall power
consumption by up to 53%. See the +3.3V Supply,
Low-Side LO Injection AC Electrical Characteristics
table and the relevant +3.3V curves in the Typical
Operating Characteristics section to evaluate the power
vs. performance tradeoffs.
Differential IF Output Amplifier
The MAX19997A mixers have an IF frequency range of
50MHz to 550MHz. The differential, open-collector IF
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
For the best performance, route the ground pin traces
directly to the exposed pad under the package.
output ports require external pullup inductors to V
.
CC
These pullup inductors are also used to resonate out the
parasitic shunt capacitance of the IC, PCB components,
and PCB to provide an optimized IF match at the fre-
quency of interest. Note that differential IF outputs are
ideal for providing enhanced 2RF - 2LO and 2LO - 2RF
rejection performance. Single-ended IF applications
require a 4:1 balun to transform the 200Ω differential
output impedance to a 50Ω single-ended output. After
the balun, voltage standing-wave ratio (VSWR) is typi-
cally 1.2:1.
The PCB exposed pad MUST be connected to the
ground plane of the PCB. It is suggested that multiple
vias be used to connect this pad to the lower-level
ground planes. This method provides a good RF/ther-
mal-conduction path for the device. Solder the exposed
pad on the bottom of the device package to the PCB.
The MAX19997A evaluation kit can be used as a refer-
ence for board layout. Gerber files are available upon
request at www.maxim-ic.com.
30 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
path to the die. It is important that the PCB on which the
MAX19997A is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a low-
inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.
Power-Supply Bypassing
Proper voltage supply bypassing is essential for high-
frequency circuit stability. Bypass each V
pin with
CC
the capacitors shown in the Typical Application Circuit.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19997A’s 36-pin thin
QFN-EP package provides a low thermal-resistance
Table 1. Standard RF Band Application Circuit Component Values (Optimized for
Frequencies Ranging from 2400MHz to 2900MHz)
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
Murata Electronics North
America, Inc.
C1, C8
2
22pF microwave capacitors (0402)
Murata Electronics North
America, Inc.
C14
1
6
6
1.5pF microwave capacitor (0402)
0.01µF microwave capacitors (0402)
82pF microwave capacitors (0603)
C4, C9, C13, C15,
C17, C18
Murata Electronics North
America, Inc.
C10, C11, C12,
C19, C20, C21
Murata Electronics North
America, Inc.
L1, L2, L3, L4
L7, L8
4
0
120nH wire-wound high-Q inductors* (0805)
Not used
Coilcraft, Inc.
—
750Ω 1% resistors (0402). Use for V
= +5.0V applications. Larger
CC
values can be used to reduce power at the expense of some
performance loss. See the Typical Operating Characteristics section.
Digi-Key Corp.
Digi-Key Corp.
Digi-Key Corp.
Digi-Key Corp.
R1, R4
2
1.1kΩ 1% resistors (0402). Use for V
= +3.3V applications. Larger
CC
values can be used to reduce power at the expense of some
performance loss. See the Typical Operating Characteristics section.
698Ω 1% resistors (0402). Use for V
= +5.0V applications. Larger
CC
values can be used to reduce power at the expense of some
performance loss. See the Typical Operating Characteristics section.
R2, R5
R3, R6
2
2
845Ω 1% resistors (0402). Use for V
= +3.3V applications. Larger
CC
values can be used to reduce power at the expense of some
performance loss. See the Typical Operating Characteristics section.
0Ω resistors (1206). These resistors can be increased in value to reduce
power dissipation in the device, but reduces the compression point. Full
Digi-Key Corp.
Mini-Circuits
P
performance achieved using 0Ω.
1dB
T1, T2
U1
2
1
4:1 IF baluns (TC4-1W-17+)
MAX19997A IC (36 TQFN-EP)
Maxim Integrated Products,
Inc.
*Use 390nH (0805) inductors for an IF frequency of 200MHz. Contact the factory for details.
______________________________________________________________________________________ 31
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Table 2. Extended RF Band Application Circuit Component Values (Optimized for
1950MHz Operation)
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
Murata Electronics North
America, Inc.
C1, C8
2
1pF microwave capacitors (0402)
Murata Electronics North
America, Inc.
C14
1
6
1.5pF microwave capacitor (0402)
0.01µF microwave capacitors (0402)
C4, C9, C13, C15,
C17, C18
Murata Electronics North
America, Inc.
MX197A
C10, C11, C12,
C19, C20, C21
Murata Electronics North
America, Inc.
6
4
2
82pF microwave capacitors (0603)
L1, L2, L3, L4
120nH wire-wound high-Q inductors* (0805)
Coilcraft, Inc.
12nH inductors (0402). Use to improve RF match from 1800MHz to
2400MHz. Connect L7 and L8 from pins 1 and 9, respectively, to ground.
L7, L8
Coilcraft, Inc.
750Ω 1% resistors (0402). Use for V
= +5.0V applications. Larger
CC
values can be used to reduce power at the expense of some
performance loss. See the Typical Operating Characteristics section.
R1, R4
R2, R5
R3, R6
2
2
2
Digi-Key Corp.
Digi-Key Corp.
698Ω 1% resistors (0402). Use for V
= +5.0V applications. Larger
CC
values can be used to reduce power at the expense of some
performance loss. See the Typical Operating Characteristics section.
0Ω resistors (1206). These resistors can be increased in value to reduce
power dissipation in the device, but reduces the compression point. Full
Digi-Key Corp.
Mini-Circuits
P
performance achieved using 0Ω.
1dB
T1, T2
U1
2
1
4:1 IF baluns (TC4-1W-17+)
MAX19997A IC (36 TQFN-EP)
Maxim Integrated Products,
Inc.
*Use 390nH (0805) inductors for an IF frequency of 200MHz. Contact the factory for details.
32 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Typical Application Circuit
C19
T1
L1*
L2*
IF MAIN OUTPUT
V
CC
C21
R3
4:1
R1
V
CC
C20
R2
V
CC
C17
C18
L7**
+
C1
RFMAIN
GND
GND
RF MAIN INPUT
1
2
3
4
5
6
7
8
9
27
26
25
24
23
22
21
20
19
GND
GND
GND
GND
MAX19997A
GND
V
CC
V
CC
C4
GND
GND
GND
V
CC
GND
V
CC
C15
EXPOSED
PAD
GND
GND
LO
RFDIV
RF DIV INPUT
LO
C14
C8
L8**
V
CC
C9
R4
V
CC
T2
R5
C11
C13
*USE 390nH (0805) INDUCTORS FOR AN IF FREQUENCY OF 200MHz.
CONTACT FACTORY FOR DETAILS.
**CONNECT INDUCTORS TO IMPROVE RF MATCH FROM 1800MHz TO
2400MHz. SEE TABLE 2 FOR DETAILS.
L4*
V
CC
C12
R6
IF DIV OUTPUT
L3*
4:1
C10
______________________________________________________________________________________ 33
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Pin Configuration/
Functional Block Diagram
Chip Information
PROCESS: SiGe BiCMOS
TOP VIEW
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maxim-ic.com/packages. Note that a
“+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
+
1
2
3
4
5
6
7
8
9
27
RFMAIN
GND
GND
MAX19997A
26
GND
MX197A
25
24
23
22
21
20
19
GND
GND
GND
GND
GND
LAND
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE NO.
21-0141
PATTERN NO.
V
CC
90-0049
36 Thin QFN-EP T3666+2
GND
GND
V
CC
GND
EXPOSED
PAD
GND
LO
GND
RFDIV
6mm x 6mm THIN QFN (EXPOSED PAD)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE.
34 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
MX197A
Revision History
REVISION
NUMBER
REVISION
DATE
PAGES
CHANGED
DESCRIPTION
0
1
2
3
10/08
9/10
2/11
8/11
Initial release
—
2, 3, 4, 10,
15, 29, 30, 34
Minor style edits
Increased IF frequency range from 50MHz to 550MHz
1, 3, 29, 30
Expanded +5.0V Supply DC Electrical Characteristics table without
changing existing limits
2
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 35
© 20101 Maxim Integrated Products
Maxim is a registered trademark of Maxim Integrated Products, Inc.
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