MAX40203AUK+T [MAXIM]
Analog Circuit,;
| 型号： | MAX40203AUK+T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Analog Circuit, |
| 文件： | 总14页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
General Description
Benefits and Features
The MAX40203 is an ideal diode current-switch with
forward voltage drop that is approximately an order
of magnitude smaller than that of Schottky diodes.
When forward biased and enabled, the MAX40203
conducts with 230mV of voltage drop while carrying
currents as high as 1A. During a short-circuit or a fast
power-up, the device limits its output current to 2A. The
MAX40203 thermally protects itself and any downstream
circuitry from overcurrent conditions.
● Lower Voltage Drop in Portable Applications
• 14mV Forward Drop at 1mA (SOT Package)
• 28mV Forward Drop at 100mA (SOT Package)
• 100mV Forward Drop at 500mA (SOT Package)
• 230mV Forward Drop at 1A (SOT Package)
● Longer Battery Life
• Low Leakage When Reverse-Biased from VDD:
• 10nA (Typ)
• Low Supply Quiescent Current
• 300nA (Typ), 500nA (Max)
This ideal diode operates from a supply voltage of 1.2V
to 5.5V. The supply current is relatively constant with load
current, and is typically 300nA. When disabled (EN = low),
the ideal diode blocks voltages up to 6V in either direction,
makes it suitable for use in most low-voltage, portable
electronic devices.
● Smaller Footprint Than Larger Schottky Diodes
• Tiny 0.77mm x 0.77mm 4-Bump WLP
• SOT23-5 Package
● Wide Supply Voltage Range: 1.2V to 5.5V
● Thermally Self-Protecting
The MAX40203 is available in a tiny, 0.77mm x 0.77mm,
4-bump wafer-level package (WLP), with a 0.35mm bump
pitch and a 5-pin SOT-23 package. It is specified over the
automotive -40°C to +125°C temperature range.
● -40°C to +125°C Operating Temperature Range
Ordering Information appears at end of data sheet.
Applications
Simplified Block Diagram
● Notebook and Tablet Computers
● Battery Backup Systems
● Powerline Fault Recorders
● Cellular Phones
VDD
OUT
● Electronic Toys
● USB-Powered Peripherals
● Portable Medical Devices
EN
GND
19-100354; Rev 0; 6/18
MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Absolute Maximum Ratings
Any Pin to GND.......................................................-0.3V to +6V
Continuous Current into EN ...............................................10mA
Continuous Current Flowing
Continuous Power Dissipation (T = +70°C) (SOT, derate
A
3.90mW/°C above +70°C)......................................312.60mW
Operating Temperature Range......................... -40°C to +125°C
Junction Temperature......................................................+150°C
Storage Temperature Range............................ -60°C to +165°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow).......................................+260°C
Between VDD and OUT (WLP)........................................1.5A
Continuous Current Flowing
Between VDD and OUT (SOT) ...........................................1A
Continuous Power Dissipation (T = +70°C) (WLP, derate
A
9.58mW/°C above +70°C)...........................................766mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Information
4 WLP
Package Code
N40F0+1
Outline Number
21-100273
Land Pattern Number
Thermal Resistance, Four-Layer Board:
Refer to Application Note 1891
Junction to Ambient (θ
)
104.41°C/W
N/A
JA
Junction to Case (θ
)
JC
5 SOT23
Package Code
Outline Number
U5+2
21-0057
90-0174
Land Pattern Number
Thermal Resistance, Four-Layer Board:
Junction to Ambient (θ
)
255.90°C/W
81°C/W
JA
Junction to Case (θ
)
JC
For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board.
For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Electrical Characteristics
(V
= +3.6V, V
= V
, C = 0.1μF in parallel with 10µF, C = 10μF, T = -40°C to +125°C. Typical values are at T = +25°C,
DD
EN
DD
IN
L
A
A
unless otherwise noted (Notes 1, 2).)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
FORWARD BIASED CHARACTERISTICS
Supply Voltage
Guaranteed by V
at 100mA
1.2
5.5
500
650
1.2
V
FWD
No load current (I = 0), T = +25°C
300
nA
nA
µA
C
A
Supply Current (Forward
Biased, Enabled)
No load current (I = 0) -40°C < T < +85°C
I
C
A
AG
No load current (I = 0), -40°C < T < +125°C
C
A
-40°C < T < +85°C, V
A
= 0V, V
= 0V
= 0V
130
130
14
600
2000
35
Supply Current (Forward
Biased, Disabled)
EN
OUT
nA
-40°C < T < +125°C, V
=0V, V
OUT
A
EN
I
I
I
I
I
I
= 1mA
FWD
FWD
FWD
FWD
FWD
FWD
= 100mA
= 200mA, V
= 200mA, V
= 500mA
28
70
Forward Voltage
(VDD – VOUT)
(SOT23 Only)
= 1.5V
= 3.6V
69
120
90
DD
DD
V
mV
FWD
41
100
230
200
500
= 1A (Note 3)
Stable for all load currents (see Applications
section for further details)
Capacitive Loading
0.3–100
µF
°C
°C
Device temperature at which the MOSFET
switch turns off, over-riding the Enable pin and
the applied voltage polarity
Thermal Protection
Threshold
163
Thermal Protection
Hysteresis
14
REVERSE-BIASED CHARACTERISTICS
Turn-Off Reverse
Threshold
(V
- V
)
26
mV
nA
OUT
DD
T
= +25°C
-50
+10
+50
+150
100
A
V
= 4V
= 5V
OUT
-40°C < T < +85°C
A
-150
Leakage Current from
VDD (Reverse Biased)
I
T = +25°C
A
15
CA
V
V
V
OUT
-40°C < T < +125°C
-0.5
+0.5
200
μA
A
= 2.0V, V
= 5.5V, -40°C < T < +85°C
A
15
nA
DD
OUT
T = +25°C
350
900
A
= 4V
OUT
-40°C < T < +85°C
1400
900
A
Current Into OUT
(Reverse Biased)
I
T = +25°C
360
700
700
nA
C
A
V
= 5V
-40°C < T < +85°C
1400
2200
OUT
A
-40°C < T < +125°C
A
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Electrical Characteristics (continued)
(V
= +3.6V, V
= V
, C = 0.1μF in parallel with 10µF, C = 10μF, T = -40°C to +125°C. Typical values are at T = +25°C,
DD
EN
DD
IN
L
A
A
unless otherwise noted (Notes 1, 2).)
PARAMETER
SYMBOL
CONDITIONS
MIN
-100
-150
-100
-500
TYP
MAX
+100
+150
+100
+500
UNITS
T = +25°C
+10
A
V
V
= 0V, V
= 0V, V
= 4V
= 5V
EN
OUT
Leakage Current Into VDD
(Reverse Biased,
Disabled)
-40°C < T < +85°C
A
I
nA
AG
T
= +25°C
10
15
A
EN
OUT
-40°C < T < +125°C
A
ENABLE (EN)
T
= +25°C
50
0.1
0.4
nA
μA
V
A
Low Level Input Current
I
V
= 0V (Note 2)
AE
EN
-40°C < T < 125°C
A
Low Input Voltage Level
High Input Voltage Level
V
IL
V
1.25
V
IH
High Level Input Current
I
I
V
V
= 3.6V (Note 2)
= 5V (Note 2)
T
T
= +25°C
= +25°C
80
nA
EG
EG
EN
A
750
nA
nA
A
High Level Input Current
EN
(V
> V
)
EN
DD
-40°C < T < +125°C
1300
350
A
Enable Input Hysteresis
TRANSIENTS AND TIMINGS
Power-Up Delay
10
mV
450
320
µs
µs
Measured from V
current reaching 90% of its final value
= V
to the forward
EN
DD
Enable Time
Disable Time
Load current prior to disabling is 100mA, time
measured from V
1mA
= 0 until output current <
80
µs
EN
Note 1: Limits are 100% tested at T = +25°C. Limits over the operating temperature range and relevant supply voltage range are
A
guaranteed by design and characterization.
Note 2: Refer to the Supply and Leakage Current Naming Conventions in the Detailed Description section for all the different
currents that are specified in the Electrical Characteristics Table.
Note 3: 1A pulsed current in duty cycle used for this test to make sure the device’s self heating is negligible. For more information,
see Thermal Performance and Power Dissipation section.
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Typical Operating Characteristics
(V
= 3.6V, GND = 0V, EN = V , I
=100mA, C
= 10µF to GND. Typical values are at T = +25°C, unless otherwise noted.)
OUT A
DD
DD LOAD
GROUND CURRENT
vs. FORWARD/LOAD CURRENT
QUIESCENT SUPPLY CURRENT
vs. SUPPLY INPUT VOLTAGE
GROUND CURRENT
vs. FORWARD/LOAD CURRENT
toc03
toc01
toc02
4
3
2
1
0
800
2
TA = +125°C
VDD = 1.5V
VDD = 1.2V
700
600
500
400
300
200
100
0
TA = +125°C
TA = +125°C
1.5
1
TA=+85°C
TA= +85°C
TA = +85°C
0.5
0
TA = +25°C
TA = +25°C
TA = +25°C
TA = -40°C
TA = -40°C
TA = -40°C
0
0
0
50
100
150
200
250
300
0
1
2
3
4
5
6
0
10 20 30 40 50 60 70 80 90 100
FORWARD/LOAD CURRENT (mA)
SUPPLY INPUT VOLTAGE (V)
FORWARD/LOAD CURRENT (mA)
GROUND CURRENT
vs. FORWARD/LOAD CURRENT
GROUND CURRENT
vs. FORWARD/LOAD CURRENT
GROUND CURRENT
vs. FORWARD/LOAD CURRENT
toc04b
toc04a
toc05
100
10
1
20
16
12
8
20
16
12
8
VDD = 3.6V
VDD = 5.5V
VDD = 3.6V
TA = +85°C
TA = +125°C
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
TA = +85°C
TA = +125°C
4
4
TA = -40°C
TA = +25°C
TA = -40°C
800
TA = +25°C
0.1
0
0
0.0001 0.001 0.01 0.1
1
10 100 1000
200
400
600
800
1000
0
200
400
600
1000
FORWARD/LOAD CURRENT (mA)
FORWARD/LOAD CURRENT (mA)
FORWARD/LOAD CURRENT (mA)
FORWARD VOLTAGE vs.
FORWARD CURRENT (SOT)
FORWARD VOLTAGE vs.
FORWARD CURRENT (SOT)
FORWARD VOLTAGE vs.
FORWARD CURRENT (SOT)
toc08
toc07
toc06
300
250
200
150
100
50
150
140
130
120
110
100
90
80
70
60
50
100
90
80
70
60
50
40
30
20
10
0
VDD = 3.6V
VDD = 1.5V
VDD = 1.2V
TA = +125°C
TA = +25°C
TA = -40°C
TA = +85°C
TA = +85°C
TA = +125°C
TA=+125°C
TA = -40°C
TA = +25°C
40
30
20
10
TA = -40°C
800
TA = +25°C
TA=+85°C
0
0
200
400
600
1000
0
10 20 30 40 50 60 70 80 90 100
FORWARD CURRENT (mA)
0
50
100
150
200
250
300
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Typical Operating Characteristics (continued)
(V
= 3.6V, GND = 0V, EN = V , I
=100mA, C
= 10µF to GND. Typical values are at T = +25°C, unless otherwise noted.)
DD
DD LOAD
OUT
A
FORWARD VOLTAGE
vs. FORWARD CURRENT (SOT)
QUIESCENT SUPPLY CURRENT
QUIESCENT SUPPLY CURRENT
vs. ENABLE INPUT
vs. ENABLE INPUT
toc11
toc09
toc10
0.6
0.5
0.4
0.3
0.2
0.1
0
400
0.5
VDD = 3.6V
VDD = 5.5V
VDD = 1.2V
0.4
0.3
0.2
0.1
0
300
200
100
0
EN = VDD
TA = +85°C
EN = VDD
TA = +125°C
EN = GND
TA = -40°C
EN = GND
TA = +25°C
600
-50 -25
0
25 50 75 100 125 150
TEMPERATURE(°C)
0
200
400
800
1000
-50 -25
0
25 50 75 100 125 150
TEMPERATURE(°C)
FORWARD CURRENT (mA)
CATHODE CURRENT
AT REVERSE OPERATION
ANODE CURRENT
AT REVERSE OPERATION
QUIESCENT SUPPLY CURRENT
vs. ENABLE INPUT
toc14
toc13
toc12
120
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
0.6
0.5
0.4
0.3
0.2
0.1
0
VDD = 1.2V
VDD = 1.2V
VDD = 5.5V
TA=+125°C
TA = +125°C
EN = VDD
TA = +85°C
TA = +85°C
TA=-40°C
TA=+25°C
EN = GND
TA = +25°C
2.8
TA = -40°C
4.4 5.2
1.2
2
2.8
3.6
4.4
5.2
6
-50 -25
0
25 50 75 100 125 150
TEMPERATURE(°C)
1.2
2
3.6
VOUT (V)
6
VOUT (V)
CATHODE CURRENT
AT REVERSE OPERATION
GROUND CURRENT
AT REVERSE OPERATION
ANODE CURRENT
AT REVERSE OPERATION
toc15
toc16
toc17
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
60
50
40
30
20
10
0
VDD = 1.2V
VDD = 1.5V
VDD = 1.5V
TA = +125°C
TA = +125°C
TA = +125°C
TA = +85°C
TA = +85°C
TA = +85°C
TA = +25°C
TA = +25°C
TA = -40°C
4.4 5.2
TA = -40°C
4.5 5.5
TA = +25°C
2.8
TA = -40°C
1.2
2
3.6
6
1.5
2.5
3.5
1.5
2.5
3.5
4.5
5.5
VOUT (V)
VOUT (V)
VOUT (V)
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Typical Operating Characteristics (continued)
(V
= 3.6V, GND = 0V, EN = V , I
=100mA, C
= 10µF to GND. Typical values are at T = +25°C, unless otherwise noted.)
DD
DD LOAD
OUT
A
ANODE CURRENT
AT REVERSE OPERATION
GROUND CURRENT
AT REVERSE OPERATION
CATHODE CURRENT
AT REVERSE OPERATION
toc20
toc18
toc19
1400
1200
1000
800
600
400
200
0
1000
800
600
400
200
40
30
20
10
0
VDD = 3.6V
TA = +125°C
VDD = 1.5V
VDD = 3.6V
TA = +125°C
TA = +125°C
TA = +25°C
TA = +85°C
TA = +85°C
TA = +85°C
TA = +25°C
TA = -40°C
TA = -40°C
TA = +25°C
TA = -40°C
5.5
0
-10
1.5
2
2.5
3
3.5
4
4.5
5
6
3.6
4
4.4
4.8
5.2
5.6
6
3.6
4
4.4
4.8
5.2
5.6
6
VOUT (V)
VOUT (V)
VOUT (V)
GROUND CURRENT
AT REVERSE OPERATION
POWER-UP RESPONSE
ENABLE TRANSIENT RESPONSE
(IFWD = 1A)
(RL = 3.6kΩ)
toc21
toc22
toc23
1000
800
600
400
200
0
VDD = 3.6V
TA = +125°C
VDD
VEN
2V/div
2V/div
TA = +85°C
VOUT
VOUT
1V/div
1V/div
TA = -40°C
TA = +25°C
4.4
100μs/div
3.6
4
4.8
VOUT (V)
5.2
5.6
6
100μs/div
ENABLE TRANSIENT RESPONSE
(IFWD = 100mA)
DISABLE TRANSIENT RESPONSE
(IFWD = 1A)
DISABLE TRANSIENT RESPONSE
(IFWD = 100mA)
toc26
toc24
toc25
VEN
VEN
VEN
2V/div
2V/div
2V/div
VOUT
VOUT
VOUT
1V/div
1V/div
1V/div
100μs/div
20μs/div
40μs/div
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Pin Configuration
TOP VIEW
TOP VIEW
MAX40203
+
1
2
5
4
V
1
2
3
OUT
N.C.
DD
+
V
OUT
GND
MAX40203
DD
GND
EN
EN
WLP
SOT-23
Pin Description
PIN
NAME
FUNCTION
WLP
A1
SOT23
1
5
VDD
OUT
Input Current (Diode Anode) and Supply Voltage when VDD > VOUT
A2
Current Output (or Diode Cathode). OUT is also the internal supply when VOUT > VDD.
Active High Enable Input with a Weak Internal Pullup. Drive EN high to enable the device,
and pull it low to disable the device.
B1
3
EN
B2
—
2
4
GND
N.C.
Ground. Power supply return.
No Connection. Not internally connected.
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
connect to V
should not be turned on before V
for full temperature operating range. EN
DD
Detailed Description
.
DD
The MAX40203 mimics a near-ideal diode. The device
blocks reverse-voltages and passes current when
forward biased just as a conventional discrete diode does.
However, instead of a cut-in voltage around 500mV and
a logarithmic voltage-current transfer curve, these ideal
diodes exhibit a near-constant voltage drop independent
of the magnitude of the forward current. This voltage drop
is around 100mV at 500mA of forward current.
It should be noted, however, that these ideal diodes are
designed to be used to switch between different DC
sources, and not for rectifying AC. In applications where
an input voltage that is negative with respect to ground
may be applied to the diode, conventional diodes should
be used.
Principle of Operation
The near-constant forward voltage drop helps with supply
regulation; a conventional diode's voltage drop typically
increases by 60mV for every decade change in forward
current. Similar to normal diodes, these ideal diodes also
become resistive as the forward current exceeds the
specified limit (see Figure 1). Unlike conventional diodes,
ideal diodes include automatic thermal protection; if the
die temperature exceeds a safe limit, they turn off in order
to protect themselves and the circuitry connected to them.
Like a conventional diode, the ideal diode turns off when
reverse-biased. The turn-on and turn-off times for enable
and disable responses are similar to those of forward and
reverse-bias conditions.
The MAX40203 uses an internal P-channel MOSFET to
pass the current from the VDD input to the OUT output.
The internal MOSFET is controlled by circuitry that:
1) Switches on the MOSFET (enable input is high), the
MAX40203 is forward biased.
2) Turns the MOSFET off when the V
is greater than
OUT
V
.
DD
3) Turns the MOSFET off if the enable input is pulled
low.
4) Turns off the MOSFET when the die temperature
exceeds the thermal protection threshold.
Supply and Leakage Current
Naming Convention
Figure 2 describes the naming conventions for all the
different currents that are specified in the Electrical
Characteristics table.
The MAX40203 features an active-high enable input (EN)
that allows the forward current path to be turned off when
not required. The device is disabled when EN is low,
and the ideal diode blocks voltages on either side to a
maximum of 6V above ground. This feature allows these
ideal diodes to be used to switch between power supply
sources, or to control which sub-systems are to be pow-
ered up. The EN input has an internal weak pullup, it can
be left open for normal operation (for -40°C to +85°C), or
In forward biased mode: I is the current entering into the
A
V
pin. I
is the current entering the V
pin and exit-
DD
AC
DD
ing from the OUT pin. I
the current entering the V
AG
DD
pin and exiting from the GND pin.
I (forward biased) = I
+ I
AC
A
AG
Likewise, in reverse biased mode: I
is the fraction of
300
CA
the current that enters the OUT pin and exits from the
pin. There is also an I , in reverse bias conditions,
VDD = 3.6V
250
V
DD
CG
enters in the OUT pin and exits from the GND pin.
TA = +85°C
200
I
(reverse biased) = I + I
C
CA
CG
The supply current is defined as the current entering the
pin (I ), when V ≥ V , no load current, and EN is
150
TA = +25°C
V
DD
AG
A
C
floating. This current all flows to GND.
100
TA = +125°C
50
TA = -40°C
100 1000
0
1
10
FORWARD CURRENT (mA)
Figure 1. Forward Voltage vs. Forward Current
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
The leakage current under reverse biased conditions (I
)
CA
Applications Information
is the current exiting from the V
pin. This current enters
DD
Loading Limitations
the device from the OUT pin. There is also a current that
flows from the OUT pin to the GND pin (I ). Thus, I
Due to the very low quiescent current of these ideal diodes,
the internal control circuitry has limited response speed.
Therefore, when the load contains significant capacitance
and currents are high (> 500mA), both the turn-on time
and the turn-off time can be noticeable. In most situations
this is unlikely to be an issue, but the source impedance
needs to be within certain limits if the source voltage is
below 2V. This is because a sufficiently large current surge
can drop the input voltage to below the minimum supply,
causing the internal circuitry to start to shut down.
=
C
CG
I
+ I . Note that I is proportional to the magnitude of
CA
CG CA
the reverse bias. The I
current is essentially the supply
CG
current, it is less sensitive to the magnitude of the reverse
bias.
The high input level current, I , when V
EG
> V
is a
EN
DD
current that flows only to GND.
V
EN
I
E
A
EN
I
I
A
C
R
LD
V
C
V
DD
V
V
LD
A
A
C
OUT
A
A
GND
I
G
A
AMMETERS ASSUMED TO HAVE NO BURDEN
Figure 2. Ideal Diode Test Setup and Naming Convention
D1
EXTERNAL
SUPPLY
MAX40203
L
S
R
S
TO LOAD
OUT
GND
V
DD
C
IN
C
S
C
L
EN
Figure 3. Typical OR Application Showing Source Impedance
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
In Figure 3, the input source inductance and resistance
are shown. When a sudden current step occurs, the ideal
diode becomes forward biased and turns on, and the
resulting current surge causes a momentary drop across
The power dissipation is the differential voltage (V
)
).
FWD
multiplied by the current passed by the device (I
FWD
The quiescent current has a negligible effect. The ambi-
ent temperature is essentially the PCB temperature, since
this is where all the heat is sunk to. Therefore, the die
L and R . Placing C very close to the V
pin reduces
S
S
S
DD
both
L
S
and R . Adding larger capacitance load is
temperature rise is [V
x I x θ ] + T , where T
FWD JA A A
S
FWD
recommended for better load step response.
is the temperature of the board or ambient temperature.
Example calculations follow for power dissipation and die
temperature for SOT package.
Thermal Performance and Power Dissipation
The MAX40203 is not designed to operate in continuous
thermal fault conditions greater than 150°C. If the junction
SOT-23:
temperature rises to well above T = +150°C, an internal
Because the SOT-23 package has a higher thermal
resistance than the WLP, we'll reduce the forward
J
thermal sensor signals the shutdown logic, which turns
off the MOSFET, allowing the IC to cool. The thermal
sensor turns the MOSFET on again after the IC’s junction
temperature cools by roughly 14°C. The shutdown logic
is intended to protect against short-term transient thermal
faults, not continuous over-temperature conditions. A
continuous over-temperature condition can result in a
cycled output (Figure 4) with an average temperature
greater than 150°C and should be avoided. During
continuous operation, do not exceed the absolute
current by 50%, yielding I
= 500mA, V
= 175mV
FWD
FWD
(maximum value at 500mA), T = 85°C.
A
P
= 500mA x 175mV = 87.5mW.
DIS
Package Derate Calculation:
From the Absolute Maximum Ratings, the Maximum
Power Dissipation up to 70°C is 312.6mW. At 85°C
ambient temperature, the maximum power dissipation is:
312.6mW – [(85°C - 70°C) x 3.9mW/°C] = 253.5mW.
maximum junction temperature rating of T = +150°C.
J
The power dissipation determined above is 87.5mW, so
it is well within the limit. Note that, due to the SOT-23's
higher thermal resistance, a continuous forward current of
1A would be above the limit.
Although the MAX40203's operating range is -40°C ≤ T
A
≤ +125°C, care must be taken when using heavy loads
(e.g., I above 500mA to 1A). The forward voltage
FWD
drop across the V
and OUT pins increases linearly with
DD
The junction temperature is
forward current when the forward current is high. In this
resistive region, the dissipation increases with the square
of the forward current.
85°C + (87.5mW/3.9mW/°C) = 85°C + 22.4°C = 107.4°C,
which is well below the maximum rating.
Note that for I
=1A, the worst-case forward voltage
FWD
increases to 500mV, yielding a power dissipation of
500mW, which is greater than the maximum limit, and
would be expected to trip the thermal shutdown.
VDD = 3.6V, RL = 2.2Ω, TA = +125°C
VOUT
1V/div
400ms/div
Figure 4. Cycled Output During Continuous Thermal Overload
Condition
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Typical Application Circuits
Typical Application: Battery and Wall-Adapter Power-ORing
A typical use for an ideal diode is to serve as a diode with very low voltage drop in a simple power supply ORing circuit
for portable electronics. The low, <50mV, drop is a significant improvement compared to any diode of similar size. In
many systems, the wall-adapter has sufficient output capability that it can use a standard, cheap diode while the ideal
diode is used for the battery circuit. However, an ideal diode can be used for D1 as well to maximize efficiency even
when powered from the wall adapter.
The ideal diode has far lower reverse leakage at higher temperatures than typical large schottky diodes. As a result, the
ideal diode can be used with primary cells without danger of damaging them.
DIODE (D1)
FROM WALL ADAPTER
MAX40203
BATTERY
LOAD
EN
Higher Currents Using Paralleled Ideal Diodes
Since the ideal diode current flows through a mosfet, placing two or more in parallel will safely increase the current
handling capability. This relies on the strong positive temperature coefficient of mosfets, so by keeping the paralleled
units in close thermal contact, they will inherently share the current.
The figure below shows two units in parallel; this can be extended to multiple units as needed. The upper limit depends
on close thermal tracking; up to six units is generally practical when using the WLP versions. If possible, use 2oz copper
for the PCB's top metal to help with the thermal connection and keep the units as close together as practical.
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Typical Application Circuits (continued)
MAX40203
OUT
V
DD
EN
GND
MAX40203
OUT
V
DD
EN
GND
Ordering Information
TEMP
RANGE
PIN-
TOP
PART
PACKAGE MARK
MAX40203ANS+T* -40°C to +125°C
MAX40203AUK+T -40°C to +125°C
4 WLP
+H
5 SOT23
AMJO
+ Denotes a lead(Pb)-free/RoHS-compliant package.
T Denotes tape-and-reel.
*Future Product—Contact factory for availability.
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MAX40203
Ultra-Tiny Nanopower, 1A Ideal Diodes
with Ultra-Low-Voltage Drop
Revision History
REVISION REVISION
PAGES
CHANGED
DESCRIPTION
NUMBER
DATE
0
6/18
Initial release
—
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
©
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
2018 Maxim Integrated Products, Inc.
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