BC847A [MCC]
NPN Small Signal Transistor 310mW; NPN小信号晶体管310MW
| 型号： | BC847A |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Small Signal Transistor 310mW |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846A
THRU
BC848C
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
NPN Small
Signal Transistor
310mW
l
l
l
Ideally Suited for Automatic Insertion
150oC Junction Temperature
For Switching and AF Amplifier Applications
Mechanical Data
l Case: SOT-23, Molded Plastic
SOT-23
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: See Diagram
A
D
l Weight: 0.008 grams ( approx.)
Marking Code (Note 2)
B
C
Type
Marking
1A
Type
Marking
1G
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
F
E
1B
1J
1E
1F
1K
1L
H
G
J
Maximum Ratings @ 25oC Unless Otherwise Specified
DIMENSIONS
MM
Charateristic
Symbol Value Unit
INCHES
MIN
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
NOTE
80
50
30
65
45
30
6.0
5.0
Collector-Base Voltage
BC846
BC847
BC848
BC846
BC847
BC848
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
VCBO
V
Collector-Emitter Voltage
F
VCEO
V
V
G
H
J
.100
1.12
.180
.51
.085
.37
Emitter-Base Voltage BC846,BC847
K
VEBO
BC848
Suggested Solder
Pad Layout
Collector Current
IC
100
200
200
310
mA
mA
mA
mW
Peak Collector Current
ICM
IEM
Pd
.031
.800
Peak Emitter Current
Power Dissipation@Ts=50oC(Note1)
.035
.900
Operating & Storage Temperature
Tj, TSTG -55~150 oC
.079
2.000
inches
mm
Note: 1. Package mounted on ceramic substrate
0.7mm X 2.5cm2 area.
.037
.950
2. Current gain subgroup “ C” is not available
for BC846.
.037
.950
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M C C
BC846A thru BC848C
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3)
BC846
BC847
BC848
80
50
30
—
—
—
—
—
—
V(BR)CBO
IC = 10mA, IB = 0
V
Collector-Emitter Breakdown Voltage (Note 3) BC846
BC847
BC848
65
45
30
—
—
—
—
—
—
IC = 10mA, IB = 0
V(BR)CEO
V
V
Emitter-Base Breakdown Voltage (Note 3)
H-Parameters
BC846
BC847
BC848
6
5
V(BR)EBO
IE = 1mA, IC = 0
—
—
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
Small Signal Current Gain
Current Gain Group A
—
—
—
—
—
—
—
—
—
—
—
—
220
330
600
2.7
4.5
8.7
18
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
kW
kW
kW
µS
µS
µS
—
B
C
Input Impedance
Current Gain Group A
B
C
Current Gain Group A
VCE = 5.0V, IC = 2.0mA,
f = 1.0kHz
Output Admittance
B
C
A
B
C
60
1.5x10-4
2x10-4
3x10-4
Reverse Voltage Transfer Ratio
Current Gain Group
—
—
DC Current Gain
Current Gain Group A
B
110
200
420
180
290
520
220
450
800
—
—
VCE = 5.0V, IC = 2.0mA
(Note 3)
C
RqS
—
—
—
—
°C/W
°C/W
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient Air
Collector-Emitter Saturation Voltage (Note 3)
Note 1
320
400
RqJA
Note 1
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
90
200
250
600
VCE(SAT)
VBE(SAT)
VBE(ON)
—
—
mV
mV
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
700
900
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
—
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
580
—
660
—
700
770
VCE = 80V
ICES
ICES
ICES
ICBO
ICBO
Collector-Cutoff Current (Note 3)
BC846
BC847
BC848
—
—
—
—
—
—
—
—
—
—
15
15
15
15
5.0
nA
nA
nA
nA
µA
V
V
V
V
CE = 50V
CE = 30V
CB = 40V
CB = 30V, TA = 150°C
VCE = 5.0V, IC = 10mA,
f = 100MHz
fT
Gain Bandwidth Product
100
—
300
3.0
—
—
MHz
pF
VCB = 10V, f = 1.0MHz
CCBO
Collector-Base Capacitance
VCE = 5V, IC = 200µA,
RS = 2.0kW,
f = 1.0kHz, Df = 200Hz
Noise Figure
NF
—
2
10
dB
Notes:
1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area.
2. Current gain subgroup “C” is not available for BC846.
3. Short duration pulse test to minimize self-heating effect.
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