ES2BP [MCC]
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, HSMA, 2 PIN, Rectifier Diode;
| 型号： | ES2BP |
| 厂家： | 
Micro Commercial Components |
| 描述： | DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, HSMA, 2 PIN, Rectifier Diode 二极管 光电二极管 功效 |
| 文件： | 总3页 (文件大小：903K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
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ES2A
THRU
ES2M
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
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2 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Features
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
For Surface Mount Applications
·
·
·
·
·
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
DO-214AC
(SMAJ) (High Profile)
·
·
·
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 20°C/W Junction To Lead
H
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
Maximum Maximum
Cathode Band
RMS
Voltage
DC
Blocking
Voltage
50V
J
ES2A
ES2B
ES2C
ES2D
ES2G
ES2J
ES2K
ES2M
ES2A
ES2B
ES2C
ES2D
ES2G
ES2J
ES2K
ES2M
35V
70V
100V
150V
200V
400V
600V
800V
1000V
100V
105V
140V
280V
420V
560V
700V
150V
200V
400V
600V
800V
1000V
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
DIMENSIONS
Average Forward
Current
IF(AV)
2.0A
TJ = 75°C
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
DIM
A
B
C
D
E
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
MAX
2.95
2.25
.20
NOTE
Peak Forward Surge
Current
IFSM
50A
8.3ms, half sine
.51
1.40
2.45
5.69
4.57
2.84
Maximum
Instantaneous
F
G
H
J
Forward Voltage
ES2A-D
.975V
1.35V
1.60V
VF
IR
IFM = 2.0A;
TJ = 25°C*
ES2G-K
ES2M
SUGGESTED SOLDER
PAD LAYOUT
Maximum DC
0.090”
Reverse Current At
Rated DC Blocking
Voltage
5mA
TJ = 25°C
150mA TJ = 100°C
Maximum Reverse
0.085”
Recovery Time
ES2A-D
50ns
Trr
IF=0.5A, IR=1.0A,
Irr=0.25A
ES2G-K
60ns
ES2M
100ns
0.070”
Typical Junction
Capacitance
CJ
25pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 msec, Duty cycle 2%
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ES2A thru ES2M
M C C
Figure 1
Typical Forward Characteristics
20
Figure 2
Forward Derating Curve
10
6
2.4
2.2
2.0
4
1.8
1.6
2
25°C
1.4
1.2
1
.6
.4
Amps
Amps
1.0
.8
.6
.2
.4
.2
Single Phase, Half Wave
60Hz Resistive or Inductive Load
.1
.06
.04
0
25
50
75
100
125
150
0
°C
.02
.01
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
.2
.4
1.2
.6
.8
1.0
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
TJ=25°C
pF
10
6
4
2
1
400
1000
.1
.2
.4
1
2
10 20
200
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
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ES2A thru ES2M
M C C
Figure 4
Peak Forward Surge Current
Figure 5
New SMB Assembly
50
40
30
Amps
20
Round Lead
Process
10
0
80
100
1
6
60
4
10 20
40
8
2
Cycles
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50W
10W
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
Oscilloscope
Note 1
1W
-1.0
1cm
Notes:
1. Rise Time = 7ns max.
Set Time Base for 20/100ns/cm
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
www.mccsemi.com
相关型号：
ES2B_NL
Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
FAIRCHILD
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