MMBTA13 [MCC]
NPN Darlington Amplifier Transistor; NPN达林顿晶体管放大器
| 型号： | MMBTA13 |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Darlington Amplifier Transistor |
| 文件： | 总4页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
MMBTA13
MMBTA14
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
·
·
·
·
Operating And Storage Temperatures –55OC to 150OC
NPN Darlington
Amplifier Transistor
R
qJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”)
Capable of 225mWatts of Power Dissipation
Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N
SOT-23
Electrical Characteristics @ 25OC Unless Otherwise Specified
A
D
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
30
Vdc
B
C
(I =100uAdc, IB=0)
C
V(BR)CBO
V(BR)EBO
IC
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current-Continuous
30
10
Vdc
Vdc
F
E
300
mAdc
nAdc
G
H
J
ICBO
Collector Cutoff Current
(VCB=30Vdc, IE=0)
Emitter Cutoff Current
100
100
K
IEBO
nAdc
Collector
(VEB=10Vdc, I =0)
C
Base
ON CHARACTERISTICS
hFE
DC Current Gain*
Emitter
MMBTA13
MMBTA14
(I =10mAdc, VCE=5.0Vdc)
C
5000
10000
DIMENSIONS
INCHES
MIN
.110
MM
MMBTA13
MMBTA14
VCE(sat)
(I =150mAdc, VCE=1.0Vdc)
10000
20000
DIM
A
MAX
MIN
2.80
2.10
1.20
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
NOTE
C
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
B
.083
.047
Collector-Emitter Saturation Voltage
(I =100mAdc, I =0.1mAdc)
C
D
E
1.5
2.0
Vdc
Vdc
C
B
.035
.070
.018
1.78
.45
VBE(sat)
Base-Emitter Saturation Voltage
(I =100mAdc,VCE=5.0Vdc)
C
F
G
H
J
.0005
.035
.003
.013
.89
.085
.37
.100
1.12
.180
.51
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
K
.015
(I =10mAdc, VCE=5.0Vdc, f=100MHz)
125
MHz
pF
C
Suggested Solder
Pad Layout
Cobo
Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
8.0
15
.031
.800
C
ibo
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
.035
.900
pF
SWITCHING CHARACTERISTICS
.079
2.000
inches
mm
td
Delay Time
(VCC=30Vdc, VBE=0.5Vdc
10
25
225
ns
ns
ns
tr
Rise Time
IC=150mAdc, IB1=15mAdc)
ts
Storage Time
(VCC=30Vdc, I =150mAdc
C
tf
Fall Time
IB1=IB2=15mAdc)
60
ns
.037
.950
.037
.950
www.mccsemi.com
MMBTA13
MMBTA14
M C C
500
2.0
BANDWIDTH = 1.0 Hz
R ≈ 0
S
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
200
100
50
I = 1.0 mA
C
0.3
0.2
10 µA
100 µA
0.1
0.07
0.05
100 µA
20
10 µA
I = 1.0 mA
C
10
0.03
0.02
5.0
10 20
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
10
BANDWIDTH = 10 Hz TO 15.7 kHz
100
70
I = 10 µA
C
10 µA
8.0
6.0
4.0
2.0
50
100 µA
30
20
100 µA
1.0 mA
2.0
I = 1.0 mA
C
10
0
1.0
5.0
10
20
50 100 200
500 1000
1.0 2.0
5.0
10
20
50 100 200
500 1000
R , SOURCE RESISTANCE (kΩ)
S
R , SOURCE RESISTANCE (kΩ)
S
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
www.mccsemi.com
MMBTA13
MMBTA14
M C C
20
10
4.0
2.0
V
= 5.0 V
CE
f = 100 MHz
T = 255C
J
T = 255C
J
7.0
5.0
C
ibo
1.0
0.8
C
obo
0.6
0.4
3.0
2.0
0.2
0.04
0.1 0.2
0.4
1.0 2.0 4.0
10 20
40
0.5 1.0
2.0
0.5 10 20
50
100 200
500
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200Ăk
3.0
2.5
2.0
1.5
1.0
0.5
T = 1255C
J
T = 255C
J
100Ăk
70Ăk
50Ăk
I
C
=
50 mA
250 mA 500 mA
10 mA
255C
30Ăk
20Ăk
10Ăk
7.0Ăk
5.0Ăk
-ā555C
V
CE
= 5.0 V
3.0Ăk
2.0Ăk
500
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
5.0 7.0 10
20 30
50 70 100
200 300
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (µA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.6
1.4
-ā1.0
*APPLIES FOR I /I 3 h /3.0
C B
FE
255C TO 1255C
T = 255C
J
*R
q
FOR V
CE(sat)
VC
-ā2.0
-ā3.0
-ā4.0
-ā5.0
-ā6.0
V
@ I /I = 1000
-ā555C TO 255C
255C TO 1255C
BE(sat)
C B
1.2
1.0
0.8
0.6
V
BE(on)
@ V = 5.0 V
CE
q
FOR V
BE
VB
-ā555C TO 255C
V
@ I /I = 1000
C B
CE(sat)
5.0 7.0
10
20 30
50 70 100 200 300
500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
www.mccsemi.com
MMBTA13
MMBTA14
M C C
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
0.1
0.1
0.07
SINGLE PULSE
0.05
0.03
0.02
Z
Z
= r(t) • R ąT
- T = P
Z
θ
Z
θ
θ
JC(t)
JC
J(pk)
C
(pk) JC(t)
= r(t) • R ąT
- T = P
θJA(t)
θJA
J(pk)
A
(pk) θJA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0Ăk
2.0Ăk
5.0Ăk 10Ăk
t, TIME (ms)
Figure 12. Thermal Response
1.0Ăk
700
FIGURE A
1.0 ms
500
t
P
T = 25°C
C
300
200
100 µs
T = 25°C
A
P
P
P
P
1.0 s
100
70
50
t
1
30
20
CURRENT LIMIT
THERMAL LIMIT
1/f
SECOND BREAKDOWN LIMIT
t
1
DUTYĂCYCLE + t Ăf +
10
0.4 0.6
1
t
P
40
1.0
2.0
4.0 6.0
10
20
PEAK PULSE POWER = P
P
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data
www.mccsemi.com
相关型号：
MMBTA13-13
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
MMBTA13D87Z
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明