S9012I [MCC]
500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3;
| 型号： | S9012I |
| 厂家： | 
Micro Commercial Components |
| 描述： | 500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3 |
| 文件： | 总1页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TM
S9012
Micro Commercial Components
Features
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·
·
·
·
·
TO-92 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
Transistors
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Marking Code: S9012
Pin Configuration
TO-92
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
B
C
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
40
25
5.0
---
---
---
---
---
Vdc
Vdc
(I =100uAdc, IE=0)
C
Collector-Emitter Breakdown Voltage
(I =0.1mAdc, IB=0)
C
Emitter-Base Breakdown Voltage
---
Vdc
(I =100uAdc, IC=0)
E
Collector Cutoff Current
0.1
0.2
0.1
uAdc
uAdc
uAdc
(VCB=40Vdc, I =0)
E
ICEO
Collector Cutoff Current
(VCE=20Vdc, I =0)
B
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, I =0)
C
D
ON CHARACTERISTICS
hFE(1)
DC Current Gain
64
40
---
---
---
300
---
---
---
(I =50mAdc, VCE=1.0Vdc)
C
hFE(2)
DC Current Gain
(I =500mAdc, VCE=1.0Vdc)
C
VCE(sat)
VBE(sat)
VEB
Collector-Emitter Saturation Voltage
0.6
1.2
1.4
Vdc
Vdc
Vdc
(I =500mAdc, IB=50mAdc)
C
G
Base-Emitter Saturation Voltage
(I =500mAdc, IB=50mAdc)
C
DIMENSIONS
Base- Emitter Voltage
(I =100mAdc)
E
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
DIM
A
B
C
D
MAX
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
.190
.190
.590
.020
.160
.104
4.33
4.30
13.97
0.36
3.30
2.44
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(I =20mAdc, VCE=6.0Vdc, f=30MHz)
C
150
---
MHz
E
G
CLASSIFICATION OF HFE (1)
Rank
G
H
I
Range
120 -166
144 -220
190 -300
www.mccsemi.com
Revision: 3
2004/07/26
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