SI3415B-TP-HF [MCC]
Power Field-Effect Transistor,;
| 型号： | SI3415B-TP-HF |
| 厂家： | 
Micro Commercial Components |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SI3415B
Features
•
•
•
•
•
•
•
•
High Density Cell Design For Ultra Low RDS(on)
High Speed Switching
P-Channel
ESD Protected Up to 2.5KV (HBM)
Trench Power LV MOSFET Technology
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
Enhancement Mode
Field Effect Transistor
Halogen Free Available Upon Request By Adding Suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
•
•
•
Operating Junction Temperature Range : -55°C to +150°C
SOT-23
Storage Temperature Range: -55°C to +150°C
Thermal Resistance: 96°C/W Junction to Ambient(Note1)
A
D
Parameter
Rating
-20
Symbol
VDS
Unit
V
B
C
Drain-Source Voltage
Gate-Source Volltage
F
E
VGS
±12
-5.6
-4.5
-23
V
Drain Current
TA=25°C Steady State
TA=70°C Steady State
Pulsed Drain Current(Note2)
ID
A
H
G
J
L
K
IDM
PD
A
DIMENSIONS
MM
Total Power Dissipation
1.3
W
INCHES
DIM
NOTE
MIN MAX MIN MAX
0.110 0.120 2.80 3.04
0.083 0.104 2.10 2.64
0.047 0.055 1.20 1.40
0.034 0.041 0.85 1.05
0.067 0.083 1.70 2.10
0.018 0.024 0.45 0.60
Note 1.Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
A
B
C
D
E
F
2.Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
Internal Structure:
G
H
J
K
L
0.01 0.15
0.0004 0.006
D
0.035 0.043 0.90 1.10
0.003 0.007 0.08 0.18
0.014 0.020 0.35 0.51
0.020
0.50
0.007
0.20
Suggested Solder Pad Layout
0.031
0.800
G
0.035
0.900
0.079
2.000
inches
mm
S
0.037
0.950
0.037
0.950
Rev.3-1-01012019
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MCCSEMI.COM
SI3415B
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
V(BR)DSS VGS=0V, ID=250µA
Drain-Source Breakdown Voltage
-20
V
VDS =0V, VGS =±12V
3
1
±15
±5
µA
µA
nA
µA
V
IGSS
Gate-Source Leakage Current
VDS =0V, VGS =±10V
VDS =0V, VGS =±5V
50
±200
-1
IDSS
VDS =-20V, VGS =0V
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-5.6A
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-3A
VGS=0V, IS=-5.6A
Zero Gate Voltage Drain Current
Gate-Threshold Voltage
VGS(th)
-0.35
-0.57
29
-0.9
36
RDS(on)
Drain-Source On-Resistance
mΩ
36
49
49
69
VSD
IS
V
Diode Forward Voltage
-0.8
-1.2
Maximum Body-Diode Continuous
Current
-5.6
A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
698
120
79
VDS=-10V,VGS=0V,f =1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
7.2
1.2
1.6
15
VDS=-10V,VGS=-4.5V,ID=-4A
VGS=-4.5V,VDS=-10V,RL=2.5Ω,
nC
ns
63
R
GEN=3Ω
td(off)
tf
21
12
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MCCSEMI.COM
SI3415B
Curve Characteristics
Fig. 1 - Output Characteristics
Fig. 2 - Transfer Characteristics
-60
-50
-40
-30
-20
-10
-0
-30
-24
-18
-12
-6
TA=25°C
Pulsed
VDS= -5V
Pulesd
VGS=-8V,-4.5V,-3V,-2.5V
VGS=-2V
TA=125°C
TA=25°C
VGS=-1.5V
-0
-0.0
-0
-1
-2
-3
-4
-5
-0.5
-1.0
-1.5
-2.0
Drain To Source Voltage (V)
Gate To Source Voltage (V)
Fig. 4 - Gate Charge
Fig. 3 - RDS(ON)—ID
-5
-4
-3
-2
-1
0
60
40
20
0
TA=25°C
Pulsed
VDS=-10V
VGS=-2.5V
VGS=-4.5V
0
2
4
6
8
10
-2
-4
-6
-8
-10
Qg Gate Charge(nC)
Drain Current (A)
Fig. 5 - ISĂVSD
Fig. 6 - Threshold Voltage
-0.9
-0.6
-0.3
-0.0
-10
-1
TA=25°C
Pulsed
-0.1
ID= -250μA
-0.01
-0.001
-1E-4
-1E-5
25
50
75
100
125
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Junction Temperature (°C)
Source To Drain Voltage (V)
Rev.3-1-01012019
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MCCSEMI.COM
SI3415B
Ordering Information
Device
Packing
Part Number-TP
Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF
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written approval of Micro Commercial Components Corporation.
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customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
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distributors.
Rev.3-1-01012019
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