SB2200 [MDD]
SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
| 型号： | SB2200 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB220 THRU SB2200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current -2.0 Ampere
FEATURES
DO-15
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
1.0 (25.4)
MIN.
0.140 (3.6)
0.104(2.6)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.300(7.6)
0.230(5.8)
MECHANICAL DATA
1.0 (25.4)
MIN.
Case: JEDEC DO-15 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
0.034 (0.86)
0.028 (0.70)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.014 ounce, 0.40 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SB SB SB SB
270 280 290 2B0
SB SB SB SB SB
220 230 240 250 260
SB SB
2150 2200
SYMBOLS
UNITS
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
20 30 40 50 60 70 80 90 100
14 21 28 35 42 49 56 63 70
20 30 40 50 60 70 80 90 100
VOLTS
VOLTS
VOLTS
150 200
105 140
100 200
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
2.0
Amp
IFSM
60.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.55
220
0.70
0.85
0.95
Maximum instantaneous forward voltage at 2.0A
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
0.5
TA=100 C
10.0
5.0
80
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-65 to +125
-65 to +150
TJ
Storage temperature range
C
TSTG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SB220 THRU SB2200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
60
48
36
24
2.0
1.6
1.2
0.8
0.4
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SB220-SB260
SB270-SB2200
12
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
C
NUMBER OF CYCLES AT 60 Hz
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
20
10
10
1
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
SB220-SB240
SB250-SB260
SB270-SB2150
SB2200
0.1
0.01
TJ=25 C
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5-TYPICAL JUNCTION CAPACITANCE
100
2000
1000
SB220-SB240
SB250-SB2200
10
1
100
TJ=25 C
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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