MLX92213ELDAAA-000RE [MELEXIS]
MicroPower & Low-Voltage Hall Effect Latch with Enable;
| 型号： | MLX92213ELDAAA-000RE |
| 厂家： | 
Melexis Microelectronic Systems |
| 描述： | MicroPower & Low-Voltage Hall Effect Latch with Enable |
| 文件： | 总11页 (文件大小：790K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Features and Benefits
Application Examples
0
0
0
Battery-operated / Handheld Appliances
Rotary or Linear Contact-Less Encoders
Scroll/Jog Wheel, Trackball (Mobile
0
0
0
Operating Voltage from 1.6 to 3.6V
Latching Output Behavior
Micropower Consumption
48uA@3V ; 36uA@1.8V
Advanced Power Manageability
through dedicated “Enable” pin
Ultra High Sensitivity Hall Sensor
Push-Pull Output
Phones,
Portable Media Players, Notebooks,
Computer
0
Mice, Camcorders, Cameras,…)
Home/Industrial Metering Equipment
0
0
0
0
(Wafer
Flow Meter)
Minuature & Ultra Thin CSP
package
(2mm x 1.5mm ; 0.4mm thickness)
“Green” and “Pb-Free” Compliant
0
Package
Ordering Code
Product Code
MLX92213
Temperature Code
E
Package Code
LD
Option Code Packing Form Code
AAA-000
RE
Legend:
Temperature Code:
Package Code:
Option Code:
E for Temperature Range -40°C to 85°C
LD for UTQFN6
xxx-000: Standard Version
RE for Reel
Packing Form:
Ordering example:
MLX92213ELD-AAA-000-RE
Data Sheet
Mar/12
390109221302
Rev 003
Page 1 of 10
MLLX92213
MicroPower && Low-Voltage
Hall Effect Latchh with Enable
1 Functional Diagram
2 General Description
The MLX92213 Micropower Low-Voltage Latch
Hall effect sensor IC is fabricated in mixed signal
state. The design has
bbeen optimized for
applications requiring extendeed operating lifetime
in battery-powered systems. The EN pin adds
flexibility by enabling exterrnal control of the
Micropower Period and Duty CCycle.
CMOS technology. It incorporat
e
e
s
advanced
Correlated Double Sampling (CDS) techniques to
provide accurate and stable magneetic switching
points.
The Push-pull Output of thee MLX92213 will be
latched in Low state in tthe presence of a
In order to save power, the internal Timing Logic
sufficiently strong South magnnetic field (B > BOP
)
alternates Awake and Sleep
significantly reducing the power con
m
ss
odes, thus
umption. The
magnetic flux density is periodicaally evaluated
facing the marked side of the package. The
Output will be latched in High state in the
presence of a sufficiently strong North magnetic
field (B < BRP).
against predefined thresholds. If the flux density is
above/below the BOP/BRP thresholds, then the
Output changes its state accordingly. During the
Sleep mode the Output is latched in its previous
Data Sheet
Mar/12
390109221302
Rev 003
Page 2 of 10
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Table of Contents
1 Functional Diagram ........................................................................................................ 2
2 General Description........................................................................................................ 2
3 Glossary of Terms .......................................................................................................... 4
4 Absolute Maximum Ratings........................................................................................... 4
5 Pinout............................................................................................................................... 4
6 Output Behavior vs. Magnetic Pole............................................................................... 4
7 General Electrical Specifications .................................................................................. 5
8 Magnetic Specifications................................................................................................. 6
9 Application Section ........................................................................................................ 6
9.1 Application Schematics..............................................................................................................................6
9.2 Recommendation / Comments ..................................................................................................................6
10 Principle of Operation................................................................................................... 6
11 Performance Graphs .................................................................................................... 7
11.1 Magnetic Threshold vs. Temperature......................................................................................................7
11.2 Magnetic Threshold vs. Supply Voltage ..................................................................................................7
11.3 Average Supply Current vs. Temperature ...............................................................................................7
11.4 Average Supply Current vs. Supply Voltage ...........................................................................................7
11.5 Supply Current vs. Temperature..............................................................................................................7
11.6 Supply Current vs. Supply Voltage..........................................................................................................7
12 Standard information regarding manufacturability of Melexis products with
different soldering processes........................................................................................... 8
13 ESD Precautions........................................................................................................... 8
14 LD Package (UTQFN-6L)............................................................................................... 9
15 Disclaimer.................................................................................................................... 10
Data Sheet
Mar/12
390109221302
Rev 003
Page 3 of 10
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
3 Glossary of Terms
Gauss, milliTesla (mT),
Units of magnetic flux density :
10 Gauss = 1mT
4 Absolute Maximum Ratings
Parameter
Symbol
VDD
Value
Units
S
S
upp
upp
l
l
y
y
V
o
l
t
a
g
e
5
V
Curr
e
n
t
IDD
10
m
A
A
EN
EN
I
I
npu
npu
t
t
V
o
l
t
a
g
e
VIN
5
V
Curr
e
e
n
t
IIN
10
5
m
m
Output
V
o
l
t
a
g
VO
UT
V
Output Curr
e
n
t
I
O
10
A
UT
Op ing Temperature Range
e
r
a
t
TA
-40 to 85
-50 to 150
Storage Temperature Range
T
S
Table 1: Absolute maximum ratings
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-
rated conditions for extended periods may affect device reliability.
5 Pinout
Pin Name
Function
Pin №
V
DD
Power
S
upp
l
y
3
(2)
G
O
ND
UT
G
r
ound
4, E-pad
P
u
s
h
-P
u
ll Ou
t
pu
t
1
1
)
E
N
C
En
a
b
l
e (
6
N
Not Conn
e
c
t
e
d
2, 5
Table 2: Pin definitions and descriptions
Note 1: EN has to be connected to VDD when External
Micropower Control is not used
LD Package
Note 2: Exposed Pad on LD package is connected to Ground
6 Output Behavior vs. Magnetic Pole
DC Operating Parameters TA = -40oC to 85oC, VDD = 1.6V to 3.6V
Parameter
Test Conditions
OUT
South po
North po
l
e
B > BO
L
o
w
P
l
e
B < BR
H
i
gh
P
Table 3: Output behavior versus magnetic pole (3)
Note 3: The magnetic pole is applied facing the package top
Data Sheet
Mar/12
390109221302
Rev 003
Page 4 of 10
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
7 General Electrical Specifications
Operating Parameters: TA = -40 to 85oC, VDD = 1.6V to 3.6V, unless otherwise specified
Parameter
Symbol Test Conditions
Min
Typ
Max
Units
S
upp
l
y
V
o
l
t
a
g
e
VDD
Op
e
r
a
t
i
ng
1.6
-
3.6
V
EN = VDD
EN = VDD
,
,
VDD
VDD
=
=
3
V
-
-
-
-
-
48
36
-
86
70
4
µ
µ
A
A
Average
S
upp
l
y
Curr
e
n
t
IDD
a
v
1.8
V
Awake
S
upp
upp
Standby upp
l
y
Curr
Curr
Curr
e
n
t
IDD
a
EN = VDD, IOUT
EN = VDD, IOUT
=
=
0
0
m
m
A
A
mA
w
S
l
ee
p
S
l
y
e
n
t
IDD
-
4.5
1
µ
µ
A
A
s
s
l
S
l
y
e
n
t
IDD
EN =
0
-
b
Output Characteristics
m
H
i
gh
L
e
v
e
l
Output
Output
V
o
l
t
a
g
e
VO
B < BRP, IOUT = -
1
A
VDD
-
0.4
VDD
-
0.2
-
V
H
Low
L
e
v
e
l
V
o
l
t
a
g
e
VO
V
B > BOP, IOUT
=
1
m
A
-
0.2
0.4
V
-
L
(
4)
Power-On Output State
High
P
O
Enable Pin Characteristics
EN
EN
EN
EN
EN
EN
I
I
I
I
nput H
nput Low
npu Curr
nput D
i
gh
V
o
l
t
a
g
e
VIH
VIL
IIN
0.1
*
VDD
-
+
1
-
-
-
-
-
-
-
V
V
V
o
l
t
a
g
e
0.1
*
VDD
+
0.1
t
e
n
t
-
1
1
5
-
µ
A
s
s
s
e
l
a
y
tID
-
µ
µ
µ
P
P
u
e
l
s
e
W
i
d
t
h
TE1
TE2
5
+
r
i
od
TAW
0.1
-
Timing Characteristics
a
5
)
En
a
b
l
e
Tr
a
n
s
i
t
i
on
on
T
i
m
e (
tE
-
-
-
-
-
-
-
-
-
tID + TA
tID + TA
80
µ
µ
µ
µ
µ
µ
µ
s
s
s
s
s
s
s
D
i
s
a
b
l
e
d
�
En
b
l
e
d
T
W
W
6
)
D
i
s
a
b
l
e
Tr
a
n
s
i
t
i
T
i
m
e (
tDT
En
abled � Dis
a
b
l
e
d
EN = VDD
31
31
-
7)
Power-On
T
i
m
e (
tO
N
EN = VDD, TA=25oC
EN = VDD
EN = VDD, TA=25oC
EN = VDD, TA=25oC
EN = VDD
,
VDD
=
3
3
V
V
52
60
Awake
T
i
m
e
TA
W
,
,
VDD
VDD
=
=
27
30
1.30
-
40
1.8
V
45
P
e
ri
od
Response
gn
T
0.70
-
1.90
T
ms
ms
P
ER
8)
T
i
m
e (
tRE
EN = VDD
S
P
ER
M
a
e
t
i
c
S
i
gn
a
l
F
r
e
qu
e
n
c
y
fB
EN = VDD
1
/ [
2
*
TPER
]
Hz
Table 4: Electrical specifications
Note 4: Defined Output state after Power-On Time is High until the first BOP threshold is reached (B > BOP).
Note 5: Enable transition time defined from EN command to the update of the Output driver state (ref. to Diagrams, p.4)
Note 6: Disable transition time defined from EN command to entering Standby (ref. to Diagrams, p.4)
Note 7: Power-On Time represents the time from reaching VDD = 1.6V to the update of the Output driver state
Note 8: Response Time is the time from the magnetic field change to the according update of the Output driver state, guaranteed by
design
Data Sheet
Mar/12
390109221302
Rev 003
Page 5 of 10
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
8 Magnetic Specifications
DC Operating Parameters: VDD = 1.6V to 3.6V
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Op
e
r
a
t
i
ng
P
o
i
n
t
t
BO
P
0.5
2
4
m
m
m
m
m
m
T
T
T
T
T
T
TA
=
25°C
R
e
l
ea
s
e
P
oi
n
t
BR
P
-
4
-2
-
0.55
Hy
Op
s
t
e
r
e
s
i
s
BH
1.5
0.1
4
7
5
YS
T
T
e
r
a
t
i
ng
P
oi
n
BO
P
2
TA = -40 to 85oC
R
e
l
ea
s
e
P
oi
n
t
BR
BH
-
5
-2
-
0.11
P
Hy
s
t
e
r
e
s
i
s
1.5
4
7
YS
Table 5: Magnetic specifications
9 Application Section
9.1 Application Schematics
+1.8V / +3.3V
V
DD
E
N
C
1
MCU
MMLX92213
10n
F
Interface
I
nput
OUT
C2
optional)
GND
(
Fig.1 – Enhanced Power Managem
e
e
nt Typical
Fig.2 – Standard Power Maanagement
1.8V or 3.3V application with MMCU interface
reading the OUT signal with defaault “Micropower”
1.8V or 3.3V application with MCU inte
r
face reading
the OUT signal and driving the ENN signal
9.2 Recommendation / Comments
A bypass capacitor C1 of 10nF is recommmended to ensure supply voltage stability in applicatioon. It should be placed
between the VDD and GND pin, as close as possible to the MLX92213.
The MLX92213 provides a direct push-p
resistor or capacitor. The use of the output capacitor C2 connected in parallel to the output iss optional. If connected
between OUT and GND in such a push pull configuration, the current sinked by the charge of he capacitor when the
uull output, hence aiming to reduce external component ccount like output pull-up
--
t
output switches from “0” to “1” leads to an small increase of the average current consumption of tthe whole module (IC +
capacitor).
Using small capacitor value C2 (less thann 50pF) would avoid having such small increase of the mmodule average current
consumption.
For enhanced power management, the EN (Enable) signal can be driven by an external MCCU. It basically allows
controlling the state IC and therefore its c rrent consumption according the application requirements
t consumption (EN = “0”)
uu
:
⊕
⊕
⊕
Standby mode for minimal curre
Default Micropower (EN = “1”)
n
Faster or slower sampling rate t
hh
rough EN signal
For more details on the different mode, pl
eease refer to the Principle of Operation section.
For application where standard power m
should be tied to VDD
a
a
nagement is enough (default “Micropower” mode, Standbby unused), the EN pin
Data Sheet
Mar/12
390109221302
Rev 003
Page 6 of 10
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
10 Principle of Operation
Note 9: The diagrams are not-to-scale, for exact values refer to General Electrical Specification
Note 10: The Output is assumed to have only a low capacitive load, which results in fast rise / fall times
390109221302
Page 7 of 10
Rev 003
Data Sheet
Mar/12
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
11 Performance Graphs
11.1 Magnetic Threshold vs. Temperature
11.2 Magnetic Threshold vs. Supply Voltage
4.0
4.0
2.0
0.0
2.0
0.0
-2.0
-4.0
-2.0
-4.0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
1
1.5
2
2.5
3
3.5
4
TEMP [DegC]
VDD [V]
Bop @25degC
Brp @25degC
Bop @3V
Brp @3V
11.3 Average Supply Current vs. Temperature
11.4 Average Supply Current vs. Supply Voltage
60
50
40
30
20
10
0
60
50
40
30
20
10
0
1
1.5
2
2.5
3
3.5
4
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
VDD [V]
TEMP [DegC]
-40
25
85
1.8
3
11.5 Supply Current vs. Temperature
11.6 Supply Current vs. Supply Voltage
5
4
3
2
1
0
5
4
3
2
1
0
1
1.5
2
2.5
3
3.5
4
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
VDD [V]
TEMP [DegC]
IDDaw (mA @25degC)
IDDsl (uA @25degC)
IDDsb (uA @25degC)
IDDaw (mA @3V)
IDDsl (uA @3V)
IDDsb (uA @3V)
Data Sheet
Mar/12
390109221302
Rev 003
Page 8 of 11
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
12 Standard information regarding manufacturability of Melexis
products with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity
level according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak
temperature, temperature gradient, temperature profile etc) additional classification and qualification tests
have to be agreed upon with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of
adhesive strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more
information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of
the use of certain Hazardous Substances) please visit the quality page on our website:
http://www.melexis.com/quality.aspx
13 ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
Data Sheet
Mar/12
390109221302
Rev 003
Page 9 of 11
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
14 LD Package (UTQFN-6L)
1.50
BSSC
0.75
BSC
No
tes:
1. All
di
m
ensions
are
i
n
milli
m
ete
rs.
2. The
conven
SPP-002.
op on but must be
nd ca d. The
marked
t
e
r
m
i
n
a
l
#1
ll con
of
i
d
e
n
t
ifi
e
r
and
t
e
r
m
i
n
a
l
nu
m
b
e
r
i
ng
t
i
on sh
a
f
o
r
m JEDEC publica
tion 95
INDEX AREA
see note 2
D
e
t
ail
s
t
e
r
m
i
n
a
l
#1
i
d
located within the zon
e
n
tifi
er
ar
e
e
t
i
a
l,
i
i
te
te
rm
i
n
a
l
#1
i
de
n
tifi
er
may
b
e
feature.
3.
D
e
popu
l
a
t
i
on
i
s
possi
b
l
e
e
i
n
a
symm
e
tr
i
ca
l
f
a
sh
i
on.
4. Pad
l
eng
t
h
appli
es
to
m
ta
llize
d
te
rm
i
n
a
l
and
i
s
measured between 0.15mm and 0.30mm from
p. If the has the op on
on the other end of the , the pad
shou not be measured
the
te
rm
i
n
a
l
ti
te
rm
i
n
a
l
t
i
all radius
te
r
m
i
n
a
l
l
e
ng
th
l
d
i
n that
radi
u
s
ar
ea
a
.
SEATING
P
LANEE
M
a
r
king
:
0.50
BSC
Terminal Tip
1st
Li
n
e
:
.13
(dot) - used to show the 1st
13 - Name of the device
“
.
”
p
i
n
(M
LX92213
)
R0.20
0.25+/-
see note 4
0.05
2nd
L
i
n
e
:
Y
WW
Y - Year
WW -
(
l
ast
di
gi
t)
INDEX AREA
see note 2
C
al
e
ndar Week
EXPOSED
PAD
0..10
1.10+/-
Data Sheet
Mar/12
390109221302
Rev 003
Page 10 of 11
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
15 Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its
Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the
information set forth herein or regarding the freedom of the described devices from patent infringement.
Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior
to designing this product into a system, it is necessary to check with Melexis for current information. This
product is intended for use in normal commercial applications. Applications requiring extended temperature
range, unusual environmental requirements, or high reliability applications, such as military, medical life-
support or life-sustaining equipment are specifically not recommended without additional processing by
Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be
liable to recipient or any third party for any damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential
damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical
data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering
of technical or other services.
© 2012 Melexis NV. All rights reserved.
For the latest version of this document, go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe, Africa, Asia:
Phone: +32 1367 0495
E-mail: sales_europe@melexis.com
America:
Phone: +1 248 306 5400
E-mail: sales_usa@melexis.com
ISO/TS 16949 and ISO14001 Certified
Data Sheet
Mar/12
390109221302
Rev 003
Page 11 of 11
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