MDD1752RH [MGCHIP]
N-Channel Trench MOSFET 40V, 50A, 8.0m(ohm);
| 型号： | MDD1752RH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel Trench MOSFET 40V, 50A, 8.0m(ohm) |
| 文件： | 总7页 (文件大小：1081K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDD1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
General Description
Features
The MDD1752 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in on-
state resistance, switching performance and reliability
VDS = 40V
ID = 50A @VGS = 10V
RDS(ON)
< 8.0mΩ @ VGS = 10V
< 10.5mΩ@ VGS = 4.5V
Low RDS(ON), low gate charge can be offering superior
benefit in the application.
Applications
Inverters
General purpose applications
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Characteristics
Symbol
VDSS
Rating
40
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
TC=25oC
TA=25oC (b)
(a)
50
A
Continuous Drain Current
Pulsed Drain Current
(Note 2)
ID
15.2
100
A
IDM
PD
A
TC=25oC
TA=25oC
(Note 3)
45
Power Dissipation for Single Operation
W
3.1
Single Pulse Avalanche Energy
EAS
153
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
-55~+150
Thermal Characteristics
Characteristics
Symbol
RθJA
Rating
40
Unit
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
oC/W
RθJC
2.8
1
Jun. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDD1752RH
-55~150oC
TO-252
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
40
-
-
3.0
1
V
VDS = VGS, ID = 250μA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VDS = 5V, ID = 14A
1.0
1.7
-
Zero Gate Voltage Drain Current
Gate Leakage Current
-
-
-
-
-
μA
IGSS
-
0.1
8.0
10.5
-
6.1
8.2
58
Drain-Source ON Resistance
RDS(ON)
gFS
mΩ
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
26.4
3.6
6.8
1480
113
243
9
-
-
-
-
-
-
-
-
-
-
Gate-Source Charge
VDS = 20V, ID = 14A, VGS = 10V
VDS = 20V, VGS = 0V, f = 1.0MHz
nC
pF
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
21
VGS = 10V ,VDS = 20V, ID = 1A ,
RGEN = 6Ω
ns
Turn-Off Delay Time
td(off)
tf
31
Turn-Off Fall Time
18
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 14A, VGS = 0V
-
-
-
0.8
26
11
1.2
V
-
-
ns
nC
IF = 14A, di/dt = 100A/μs
Qrr
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC
,
b. PD (TA=25°C) is based on RθJA
3. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V
2
Jun. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
100
80
60
40
20
0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
4.0V
4.5V
VGS = 3V
VGS = 10V
3.5V
5.0V
6.0V
4.0V
3.5V
6.0V
5.0V
4.5V
10V
3.0V
0.0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
20.0
17.5
15.0
12.5
10.0
7.5
1.6
※ Notes :
1. VGS = 10 V
2. ID = 14 A
1.4
1.2
1.0
0.8
0.6
TA = 125℃
TA = 25℃
5.0
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, Junction Temperature [oC]
VGS, Gate to Source Volatge [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
103
102
101
100
10-1
10-2
10-3
10-4
100
※ Notes :
VGS = 0V
※ Notes :
VDS = 5V
80
60
40
20
TA=125℃
TA=125℃
25℃
25℃
-55℃
-55℃
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.2
0.4
0.6
0.8
1.0
1.2
VGS, Gate-Source Voltage [V]
VSD, Source-Drain voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Jun. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
2.0n
1.6n
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
※ Note : ID = 14A
Crss = Cgd
Ciss
10V
1.2n
6
VDS = 20V
30V
800.0p
400.0p
0.0
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
2
Coss
Crss
0
0
10
20
30
40
0
10
20
30
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
103
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
TJ=25℃
100 s
1 ms
10 ms
100 ms
1s
10
DC
Single Pulse
RthJA=96℃/W
TA=25℃
1
0.1
10-1
100
101
102
1
10
tAV, TIME IN AVALANCHE (ms)
VDS, Drain-Source Voltage [V]
Fig.10 Unclamped Inductive Switching
Capability
Fig.9 Maximum Safe Operating Area
100
70
60
50
40
30
20
10
0
D=0.5
0.2
10-1
0.1
0.05
0.02
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA* Rθ (t) + TA
JA
RΘ =96℃/W
JA
single pulse
0.01
10-2
10-3
10-4
10-3
10-2
10-1
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [℃]
t1, Rectangular Pulse Duration [sec]
Fig.11 Maximum Drain Current vs. Case
Temperature
Fig.12 Transient Thermal Response Curve
4
Jun. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
100
80
60
40
20
0
50
40
30
20
10
0
Single Pulse
Single Pulse
RΘ =96℃/W
RΘ =96℃/W
JA
JA
TA=25℃
TA=25℃
1E-3
0.01
0.1
1
10
100
1000
1E-3
0.01
0.1
1
10
100
1000
T1, Time [sec]
T1, Time [sec]
Fig14. Single Pulse Maximum Peak Current
Fig13. Single Pulse Maximum Power
Dissipation
5
Jun. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
Physical Dimensions
D-PAK, 3L
Dimensions are in millimeters, unless otherwise specified
6
Jun. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
7
Jun. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明