MDP13N50G [MGCHIP]

N-Channel MOSFET 500V, 13.0A, 0.5(ohm);


型号：	MDP13N50G
厂家：	MagnaChip
描述：	N-Channel MOSFET 500V, 13.0A, 0.5(ohm)
文件：	总8页 (文件大小：1506K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MDP13N50G / MDF13N50G

N-Channel MOSFET 500V, 13.0A, 0.5Ω

General Description

Features

 V_DS= 500V

 V_DS= 550V @ Tjmax

 I_D= 13.0A @ V_GS= 10V

 R_DS(ON)< 0.5Ω @ V_GS= 10V

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Applications

 Power Supply

 HID

 Lighting

TO-220

TO-220F

MDP Series

MDF Series

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

V_DSS

MDP13N50G

MDF13N50G

Unit

Drain-Source Voltage

500

550

±30

Drain-Source Voltage @ Tjmax

Gate-Source Voltage

V_DSS@ T_jmax

V_GSS

T_C=25^oC

8.2

13*

8.2*

52*

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

T_C=100^oC

I_DM

P_D

T_C=25^oC

187

1.49

W/ ^oC

Derate above 25 ^oC

0.33

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

18.7

4.5

V/ns

580

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Symbol

R_θJA

MDP13N50G MDF13N50G

Unit

^oC/W

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

62.5

0.67

62.5

3.0

R_θJC

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

MDP13N50GTH

MDF13N50GTH

Temp. Range

-55~150^oC

Package

TO-220

Packing

Tube

RoHS Status

Halogen Free

-55~150^oC

TO-220F

Tube

Electrical Characteristics (Ta =25^oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain Cut-Off Current

Gate Leakage Current

Drain-Source ON Resistance

Forward Transconductance

Dynamic Characteristics

Total Gate Charge

BV_DSS

V_GS(th)

I_DSS

I_D= 250μA, V_GS= 0V

V_DS= V_GS, I_D= 250μA

V_DS= 500V, V_GS= 0V

V_GS= ±30V, V_DS= 0V

V_GS= 10V, I_D= 6.5A

V_DS= 40V, I_D= 6.5A

500

5.0

3.0

μA

I_GSS

100

0.5

R_DS(ON)

g_fs

0.39

Q_g

Q_gs

Q_gd

C_iss

C_rss

C_oss

t_d(on)

t_r

10.4

Gate-Source Charge

Gate-Drain Charge

V_DS= 400V, I_D= 13A, V_GS= 10V⁽³⁾

V_DS= 25V, V_GS= 0V, f = 1.0MHz

Input Capacitance

1390

6.3

173

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Rise Time

V_GS= 10V, V_DS= 250V, I_D= 13A,

R_G= 25Ω⁽³⁾

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

112

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current

Source-Drain Diode Forward

Voltage

Body Diode Reverse Recovery

Time

Body Diode Reverse Recovery

I_S

V_SD

I_S= 13A, V_GS= 0V

1.4

t_rr

325

2.9

μC

I_F= 13A, dl/dt = 100A/μs⁽³⁾

Q_rr

Charge

Note :

1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3. I_SD≤9.0A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C

4. L=6.2mH, I_AS=13.0A, V_DD=50V, , R =25Ω, Starting TJ=25°C

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

0.9

0.8

0.7

0.6

0.5

0.4

V_gs=5.5V

=6.0V

=6.5V

=7.0V

=8.0V

=10.0V

V_GS=10.0V

V_GS=20V

Notes

1. 250㎲ Pulse Test

2. T_C=25℃

V_DS,Drain-Source Voltage [V]

I_D,Drain Current [A]

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.1 On-Region Characteristics

1.2

3.0

2.5

2.0

1.5

1.0

0.5

0.0

※ Notes :

1. V_GS= 0 V

2. I_D= 250㎂

※ Notes :

1. V_GS= 10 V

2. I_D= 6.5A

1.1

1.0

0.9

0.8

-50

100

150

200

-50

100

150

200

T_J, Junction Temperature [^oC]

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

100

※ Notes :

1. V_GS= 0 V

2. I_D= 250㎂

* Notes ;

1. V_DS=30V

150℃

25℃

150℃

25℃

-55℃

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V_SD, Source-Drain Voltage [V]

V_GS[V]

Fig.5 Transfer Characteristics

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

3000

2800

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

C_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

C_oss

※ Note : I_D= 13.0A

100V

250V

C_rss= C_gd

400V

C_iss

※ Notes ;

1. V_GS= 0 V

2. f = 1 MHz

C_rss

600

400

200

0.1

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

10²

10¹

10⁰

10^-1

10^-2

10 s

Operation in This Area

is Limited by R _DS(on)

Operation in This Area

is Limited by R _DS(on)

100 s

1 ms

10 ms

100 s

1 ms

10 ms

10¹

10⁰

100 ms

10^-1

Single Pulse

T_J=Max rated

T_C=25℃

Single Pulse

T_J=Max rated

T_C=25℃

10^-2

10^-1

10⁰

10¹

10²

10^-1

10⁰

10¹

10²

V_DS, Drain-Source Voltage [V]

Fig.10 Maximum Safe Operating Area

MDF13N50G(TO-220F)

Fig.9 Maximum Safe Operating Area

MDP13N50G(TO-220)

10⁰

10^-1

10^-2

10⁰

10^-1

10^-2

D=0.5

0.2

D=0.5

0.2

0.1

0.05

0.02

0.01

※ Notes :

Duty Factor, D=t₁/t₂

PEAK T_J= P_DM* Z_{θ JC}* R_θ(t) + T_C

0.02

0.01

※ Notes :

Duty Factor, D=t₁/t₂

PEAK T_J= P_DM* Z_{θ JC}* R_θ(t) + T_C

R_Θ=0.67℃/W

R_Θ=3.0℃/W

single pulse

10^-3

single pulse

10^-3

10^-5

10^-4

10^-2

10^-1

10⁰

10¹

10^-5

10^-4

10^-2

10^-1

10⁰

10¹

t₁, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

MDP13N50G(TO-220)

Fig.12 Transient Thermal Response Curve

MDF13N50G(TO-220F)

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

14000

12000

10000

8000

6000

4000

2000

24000

22000

20000

18000

16000

14000

12000

10000

8000

6000

4000

2000

single Pulse

R_thJC= 0.67℃/W

T_C= 25℃

single Pulse

R_thJC= 3.0℃/W

T_C= 25℃

1E-5

1E-4

1E-3

0.01

0.1

1E-5

1E-4

1E-3

0.01

0.1

Pulse Width (s)

Fig.13 Single Pulse Maximum Power

Dissipation MDP13N50G(TO-220)

Fig.14 Single Pulse Maximum Power

DissipationMDF13N50G (TO-220F)

100

125

150

T_C, Case Temperature [℃]

Fig.15 Maximum Drain Current vs. Case

Temperature

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

 Physical Dimension

3 Leads, TO-220

Dimensions are in millimeters unless otherwise specified

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

 Physical Dimension

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

Symbol

Min

4.50

0.63

1.15

0.33

15.47

9.60

Nom

Max

4.93

0.91

1.47

0.63

16.13

10.71

2.54

2.34

6.48

12.24

2.79

2.52

3.10

3.00

2.84

6.90

13.72

3.67

2.96

3.50

3.55

￠R

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power

generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be

expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such

applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility

for use of any circuitry other than circuitry entirely included in a MagnaChip product.

Semiconductor Ltd.

is a registered trademark of MagnaChip

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

MDP13N50G [MGCHIP]

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