MDP18N50TH [MGCHIP]
N-Channel MOSFET 500V, 18.0 A, 0.27(ohm);![MDP18N50TH](http://pdffile.icpdf.com/pdf2/p00341/img/icpdf/MDP18N50_2097418_icpdf.jpg)
型号: | MDP18N50TH |
厂家: | ![]() |
描述: | N-Channel MOSFET 500V, 18.0 A, 0.27(ohm) |
文件: | 总6页 (文件大小:1126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MDP18N50
N-Channel MOSFET 500V, 18.0 A, 0.27Ω
General Description
Features
The MDP18N50 uses advanced Magnachip’s
MOSFET Technology, which provides low on-
state resistance, high switching performance
and excellent quality.
VDS = 500V
ID = 18.0A @VGS = 10V
RDS(ON) < 0.27Ω @VGS = 10V
MDP18N50 is suitable device for SMPS, HID
and general purpose applications.
Applications
Power Supply
HID
Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
VDSS
Rating
500
±30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
V
TC=25oC
TC=100oC
A
18
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
ID
11
A
72
IDM
PD
72
TC=25oC
Derate above 25 oC
236
1.89
4.5
W
W/ oC
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Dv/dt
EAS
V/ns
mJ
oC
950
-55~150
Junction and Storage Temperature Range
TJ, Tstg
Thermal Characteristics
Characteristics
Symbol
Rating
62.5
Unit
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
RθJA
RθJC
oC/W
0.53
1
Dec.2014. Version 1.2
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
MDP18N50TH
-55~150oC
TO-220
Tube
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
ID = 250μA, VGS = 0V
500
-
-
V
-
-
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
VGS(th)
IDSS
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 9A
3.0
5.0
1
-
-
μA
nA
Ω
IGSS
-
100
0.27
-
RDS(ON)
gfs
0.22
13
VDS = 40V, ID = 9A
-
S
48
12
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
Gate-Source Charge
Gate-Drain Charge
VDS = 400V, ID = 18A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
15
2430
10
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
pF
302
58
74
VGS = 10V, VDS = 250V, ID = 18A,
ns
RG = 25Ω(3)
110
44
Turn-Off Delay Time
Fall Time
td(off)
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
-
-
-
-
18
-
A
V
VSD
IS = 18A, VGS = 0V
1.4
trr
375
4.2
ns
μC
IF = 18A, dl/dt = 100A/μs(3)
Qrr
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C
DD
g
4. L=5.3mH, IAS=18.0A, VDD=50V, , R =25Ω, Starting TJ=25°C
g
2
Dec.2014. Version 1.2
MagnaChip Semiconductor Ltd.
100
10
35
30
25
20
15
10
5
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
VGS=20V
=10.0V
VGS=10.0V
1
0.1
0.01
Notes
1. 250㎲ Pulse Test
2. TC=25℃
0.1
1
10
0
1
2
3
4
5
6
7
8
9
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
※ Notes :
1. VGS = 10 V
2. ID = 5 A
1.1
1.0
0.9
0.8
VGS=10V
VGS=4.5V
-50
0
50
100
150
200
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
100
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
* Notes ;
100
10
1
1. VDS=30V
10
150℃
25℃
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Dec.2014. Version 1.2
MagnaChip Semiconductor Ltd.
6000
5000
4000
3000
2000
1000
0
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Coss
10
8
※ Note : ID = 11.5A
Crss = Cgd
100V
250V
Ciss
400V
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
2
0
Crss
0.1
1
10
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
101
100
10-1
10-2
20
18
16
14
12
10
8
Operation in This Area
is Limited by R DS(on)
10 s
100 s
1 ms
10 ms
100 ms
DC
6
4
Single Pulse
TJ=Max rated
TC=25℃
2
0
25
50
75
100
125
150
10-1
100
101
102
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
100
10-1
10-2
30000
27000
24000
21000
18000
15000
12000
9000
6000
3000
0
single Pulse
RthJC = 0.53℃/W
TC = 25℃
D=0.5
0.2
0.1
0.05
※ Notes :
Duty Factor, D=t1/t2
0.02
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
RΘ =0.53℃/W
0.01
JC
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
1E-5
1E-4
1E-3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Fig.11 Transient Thermal Response Curve
4
Dec.2014. Version 1.2
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
5
Dec.2014. Version 1.2
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Dec.2014. Version 1.2
MagnaChip Semiconductor Ltd.
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