MIC5017BWMT&R [MICREL]
Buffer/Inverter Based MOSFET Driver, MOS, PDSO16, 0.300 INCH, SOIC-16;
| 型号： | MIC5017BWMT&R |
| 厂家： | 
MICREL SEMICONDUCTOR |
| 描述： | Buffer/Inverter Based MOSFET Driver, MOS, PDSO16, 0.300 INCH, SOIC-16 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总12页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC5016/5017
Low-Cost Dual High- or Low-Side MOSFET Driver
Final Information
General Description
Features
MIC5016 and MIC5017 dual MOSFET drivers are designed
for gate control of N-channel, enhancement-mode, power
MOSFETs used as high-side or low-side switches. The
MIC5016/7 can sustain an on-state output indefinitely.
• 2.75V to 30V operation
• 100µA maximum supply current (5V supply)
• 15µA typical off-state current
• Internal charge pump
• TTL compatible input
TheMIC5016/7operatesfroma2.75Vto30Vsupply. Inhigh-
side configurations, the driver can control MOSFETs that
switch loads of up to 30V. In low-side configurations, with
separate supplies, the maximum switched voltage is limited
only by the MOSFET.
• Withstands 60V transient (load dump)
• Reverse battery protected to –20V
• Inductive spike protected to –20V
• Overvoltage shutdown at 35V
• Internal 15V gate protection
• Minimum external parts
• Operates in high-side or low-side configurations
• 1µA control input pull-off
The MIC5016/7 has two TTL compatible control inputs. The
MIC5016 is noninverting while the MIC5017 is inverting.
The MIC5016/7 features internal charge pumps that can
sustain gate voltages greater than the available supply
voltage. The driver is capable of turning on logic-level
MOSFETs from a 2.75V supply or standard MOSFETs from
a 5V supply. Gate-to-source output voltages are internally
limited to approximately 15V.
• Inverting and noninverting versions
Applications
• Automotive electrical load control
• Battery-powered computer power management
• Lamp control
• Heater control
• Motor control
The MIC5016/7 is protected against automotive load dump,
reversed battery, and inductive load spikes of –20V. The
driver’s overvoltage shutdown feature turns off the external
MOSFETs at approximately 35V to protect the load against
power supply excursions.
• Power bus switching
The MIC5016 is an improved pin-for-pin compatible replace-
ment in many MIC5012 applications.
Ordering Information
The MIC5016/7 is available in plastic 14-pin DIP and 16-pin
SOIC pacakges.
Part Number
Noninverting
MIC5016BWM
MIC5016BN
Inverting
Temperature Range
Package
–40°C to +85°C
–40°C to +85°C
16-pin Wide SOIC
14-pin Plastic DIP
Typical Application
+3V to +4V
MIC5017BWM
MIC5017BN
–40°C to +85°C
–40°C to +85°C
16-pin Wide SOIC
14-pin Plastic DIP
10µF
MIC5016BN
V+ A Gate A
V+ B Source A
IRLZ24
ON
OFF
ON
Back
Light
In A
Gate B
In B Source B
Gnd
OFF
IRLZ24
Figure 1: 3-Volt “Sleep-Mode” Switches
with Logic-Level MOSFETs
Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com
October 1998
1
MIC5016/5017
MIC5016/5017
Micrel
Block Diagram 1 of 2 Drivers per Package
V+
Charge Pump
Gate
15V
Source
*
Input
* Inverting version only
Ground
Connection Diagram
WM
N, J
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
In A
NC
NC
In A
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
Source A
Gnd
Source A
Gnd
V+ A
In B
V+ B
NC
V+ A
In B
V+ B
NC
Gate A
Source B
Gate B
NC
Gate A
Source B
Gate B
NC
NC
8
NC
NC
NC
14-pin DIP
16-pin Wide SOIC
Pin Description
Pin Number
Pin Number
Pin Name
Pin Function
N, J Package WM Package
12
14
V+A
Supply Pin A. Must be decoupled to isolate large transients caused by power
MOSFET drain. 10µF is recommended close to pins 12 and/or 10 and
ground. V+A and V+B may be connected to separate supplies.
10
14
12
16
V+B
Supply Pin B. See V+A.
Input A
Turns on power MOSFET A when asserted. Requires approximately 1µA to
switch.
11
4
13
4
Input B
Gate A
Gate B
Source A
Source B
Gnd
Turns on power MOSFET B. See Input A.
Drives and clamps the gate of power MOSFET A
Drives and clamps the gate of power MOSFET B
Connects the source lead of MOSFET A
Connects the source lead of MOSFET B
Ground
6
6
2
2
5
5
3
3
MIC5016/5017
2
October 1998
MIC5016/5017
Micrel
Absolute Maximum Ratings (Notes 1,2)
Operating Ratings (Notes 1,2)
Supply Voltage ............................................... –20V to 60V
Input Voltage .....................................................–20V to V+
Source Voltage..................................................–20V to V+
Source Current.......................................................... 50mA
Gate Voltage .................................................. –20V to 50V
Junction Temperature .............................................. 150°C
θJA (Plastic DIP) ..................................................... 140°C/W
θJA (SOIC) ............................................................. 110°C/W
Ambient Temperature: B version ................–40°C to +85°C
Ambient Temperature: A version ............. +55°C to +125°C
Storage Temperature ................................–65°C to +150°C
Lead Temperature......................................................260°C
(max soldering time: 10 seconds)
Supply Voltage (V+) ......................................... 2.75V to 30V
Electrical Characteristics (Note 3) TA = –55°C to +125°C unless otherwise specified
Parameter
Supply Current
(Each Driver Channel)
Conditions
Min
Typ
10
5.0
10
60
10
Max
25
10
25
100
25
Units
µA
mA
V+ = 30V
V+ = 5V
V+ = 3V
VIN De-Asserted (Note 5)
VIN Asserted (Note 5)
VIN De-Asserted
VIN Asserted
VIN De-Asserted
VIN Asserted
µA
µA
25
35
0.8
Logic Input Voltage Threshold
VIN
3.0V ≤ V+ ≤ 30V Digital Low Level
V
TA = 25°C
Digital High Level
2.0
–2.0
Logic Input Current
MIC5016 (non-inverting)
Logic Input Current
MIC5017 (inverting)
Input Capacitance
Gate Enhancement
VGATE - VSUPPLY
3.0V ≤ V+ ≤ 30V VIN Low
VIN High
0
1.0
µA
2.0
2.0
17
3.0V ≤ V+ ≤ 30V VIN Low
VIN High
–2.0
–1.0
–1.0
5.0
µA
pF
V
3.0V ≤ V+ ≤ 30V VIN Asserted
8.0V ≤ V+ ≤ 30V VIN Asserted
4.0
13
Zener Clamp
15
2.5
90
17
V
ms
µs
µs
µs
V
VGATE - VSOURCE
Gate Turn-on Time, tON
(Note 4)
V+ = 4.5V
VIN switched on, measure
8.0
140
30
CL = 1000pF
time for VGATE to reach V+ + 4V
As above, measure time for
VGATE to reach V+ + 4V
VIN switched off, measure
time for VGATE to reach 1V
As above, measure time for
VGATE to reach 1V
V+ = 12V
CL = 1000pF
V+ = 4.5V
Gate Turn-off Time, tOFF
(Note 4)
6.0
6.0
37
CL = 1000pF
V+ = 12V
30
CL = 1000pF
Overvoltage Shutdown
Threshold
35
41
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply
when operating the device beyond its specified Operating Ratings.
Note 2: The MIC5016/5017 is ESD sensitive.
Note 3: Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the
entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Note 4: Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Applications Information. Maximum value of switching time seen at 125°C, unit operated at room temperature will reflect the typical value
shown.
Note 5: “Asserted” refers to a logic high on the MIC5016 and a logic low on the MIC5017.
October 1998
3
MIC5016/5017
MIC5016/5017
Micrel
Typical Characteristics All data measured using FET probe to minimize resistive loading
Supply Current per Channel
(Output Asserted)
Gate Enhancement
vs. Supply Voltage
High-Side Turn-On Time
vs. Gate Capacitance
6
5
4
3
2
1
0
20
15
10
5
300
250
200
150
100
50
Gate Enhancement =
Supply = 12V
V
GATE – VSUPPLY
0
0
0
2
4
6
8
10
0
0
0
0
5
10 15 20 25 30
0
0
0
0
5
10 15 20 25 30
GATE CAPACITANCE (nF)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 4V
High-Side Turn-On Time
Until Gate = Supply + 4V
High-Side Turn-On Time
vs. Temperature
100
10
100
10
180
160
140
120
100
80
CGATE = 1300pF
CGATE = 3000pF
1
1
Supply = 12V
CGATE = 1000pF
60
0.1
0.01
0.1
0.01
40
20
0
4
8
12 16 20 24 28
4
8
12 16 20 24 28
-60 -30
0
30 60 90 120 150
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 10V
High-Side Turn-On Time
Until Gate = Supply + 10V
High-Side Turn-Off Time
Until Gate = 1V
100
10
100
10
10
8
CGATE = 1300pF
CGATE = 3000pF
6
1
1
CGATE = 3000pF
4
0.1
0.01
0.1
0.01
2
CGATE
=
1300pF
0
5
10 15 20 25 30
5
10 15 20 25 30
0
5 10 15 20 25 30
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Charge-Pump
Output Current
Charge-Pump
Output Current
Low-Side Turn-On Time
Until Gate = 4V
1000
100
10
10000
1000
100
10
10000
1000
100
10
28V
28V
CGATE = 3000pF
12V
Source connected
to ground: supply
voltage as noted
12V
5V
CGATE = 1300pF
5V
Source connected
to supply: supply
voltage as noted
3V
3V
1
1
1
5
10
15
5
10
15
0
5
10 15 20 25 30
GATE-TO-SOURCE VOLTAGE (V)
GATE-TO-SOURCE VOLTAGE (V)
SUPPLY VOLTAGE (V)
MIC5016/5017
4
October 1998
MIC5016/5017
Micrel
losses have a profound effect on high-current circuits. A
floating milliohmeter can identify connections that are con-
tributing excess drop under load.
Applications Information
Functional Description
The MIC5016 is functionally compatible with the MIC5012,
andtheMIC5017isan invertingconfigurationoftheMIC5016.
Low Voltage Testing As the MIC5016/5017 have relatively
high output impedances, a normal oscilloscope probe will
loadthedevice. Thisisespeciallypronouncedatlow voltage
operation. It is recommended that a FET probe or unity gain
buffer be used for all testing.
The internal functions of these devices are controlled via a
logic block (refer to block diagram) connected to the control
input (pin 14). When the input is off (low for the MIC5016, and
high for the MIC5017), all functions are turned off, and the
gate of the external power MOSFET is held low via two N-
channel switches. This results in a very low standby current;
15µAtypical,whichisnecessarytopoweraninternalbandgap.
When the input is driven to the “ON” state, the N-channel
switchesareturnedoff,thechargepump isturnedon,andthe
P-channel switch between the charge pump and the gate
turns on, allowing the gate of the power FET to be charged.
The op amp and internal zener form an active regulator which
shuts off the charge pump when the gate voltage is high
enough. This is a feature not found on the MIC5012.
Circuit Topologies
The MIC5016 and MIC5017 are well suited for use with
standard power MOSFETs in both low and high side driver
configurations. In addition, the lowered supply voltage re-
quirements of these devices make them ideal for use with
logic level FETs in high side applications with a supply
voltage of 3V to 4V. (If higher supply voltages [>4V] are used
with logic level FETs, an external zener clamp must be
supplied to ensure that the maximum VGS rating of the logic
FET[10V]isnotexceeded). Inaddition, astandardIGBTcan
be driven using these devices.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging a 1,000pF load in
90µs typical. In addition to providing active regulation, the
internal 15V zener is included to prevent exceeding the VGS
rating of the power MOSFET at high supply voltages.
Choice of one topology over another is usually based on
speed vs. safety. The fastest topology is the low side driver,
however, it is not usually considered as safe as high side
driving as it is easier to accidentally short a load to ground
than to VCC. The slowest, but safest topology is the high side
driver; with speed being inversely proportional to supply
voltage. It is the preferred topology for most military and
automotive applications. Speed can be improved consider-
ably by bootstrapping the supply.
The MIC5016/17 devices have been improved for greater
ruggedness and durability. All pins can withstand being
pulled20Vbelowgroundwithoutsustainingdamage, andthe
supply pin can withstand an overvoltage transient of 60V for
1s. An overvoltage shutdown has also been included, which
turns off the device when the supply reaches 35V.
All topologies implemented using these devices are well
suited to driving inductive loads, as either the gate or the
source pin can be pulled 20V below ground with no effect.
External clamp diodes are unnecessary, except for the case
in which a transient may exceed the overvoltage trip point.
Construction Hints
High current pulse circuits demand equipment and assembly
techniques that are more stringent than normal, low current
lab practices. The following are the sources of pitfalls most
often encountered during prototyping: Supplies : Many bench
power supplies have poor transient response. Circuits that
are being pulse tested, or those that operate by pulse-width
modulation will produce strange results when used with a
supply that has poor ripple rejection, or a peaked transient
response. Always monitor the power supply voltage that
appears at the drain of a high side driver (or the supply side
of the load for a low side driver) with an oscilloscope. It is not
uncommontofindbenchpowersuppliesinthe1kWclassthat
overshoot or undershoot by as much as 50% when pulse
loaded. Not only will the load current and voltage measure-
ments be affected, but it is possible to overstress various
components, especially electrolytic capacitors, with possibly
catastrophic results. A 10µF supply bypass capacitor at the
chip is recommended. Residual resistances : Resistances in
circuit connections may also cause confusing results. For
example, a circuit may employ a 50mΩ power MOSFET for
low voltage drop, but unless careful construction techniques
are used, one could easily add 50 to 100mΩ resistance. Do
not use a socket for the MOSFET. If the MOSFET is a TO-
220 type package, make high current connections to the
drain tab.Wiring
High Side Driver (Figure 1) The high side topology shown
here is an implementation of a “sleep-mode” switch for a
laptop or notebook computer which uses a logic level FET. A
standard power FET can easily be substituted when supply
voltages above 4V are required.
LowSideDriver(Figure2) Akeyadvantageofthistopology,
as previously mentioned, is speed. The MOSFET gate is
+3V to +30V
10µF
1/2 MIC5016
V+
ON
Input
OFF
Source
Gnd
Gate
Figure 2. Low Side Driver
October 1998
5
MIC5016/5017
MIC5016/5017
Micrel
driven to near supply immediately when the MIC5016/17 is will go low, which shuts off the MIC5016. When the short is
turned on. Typical circuits reach full enhancement in 50µs or removed, feedback to the input pin insures that the MIC5016
less with a 15V supply.
willturnbackon. Thisoutputcanalsobelevelshiftedandsent
to an I/O port of a microcontroller for intelligent control.
Bootstrapped High Side Driver (Figure 3) The turn-on time
of a high side driver can be improved to faster than 40µs by Current Shunts (RS). Low valued resistors are necessary for
bootstrapping the supply with the MOSFET source. The use at RS. Resistors are available with values ranging from 1
Schottky barrier diode prevents the supply pin from dropping to 50mΩ, at 2 to10W. If a precise overcurrent trip point is not
more than 200mV below the drain supply, and improves turn- necessary, then a nonprecision resistor or even a measured
on time. Since the supply current in the “OFF” state is only a PCB trace can serve as RS. The major cause of drift in resistor
small leakage, the 100nF bypass capacitor tends to remain values with such resistors is temperature coefficient; the
charged for several seconds after the MIC5016/17 is turned designer should be aware that a linear, 500ppm/°C change
off. Faster switching speeds can be obtained at the expense will contribute as much as 10% shift in the overcurrent trip
of supply voltage (the overvoltage shutdown will turn the part point.
off when the bootstrapping action pulls the supply pin above If this is not acceptable, a power resistor designed for current
35V) by using a larger capacitor at the junction of the two shuntservice(driftslessthan100ppm/°C),oraKelvin-sensed
1N4001 diodes. In a PWM application (this circuit can be resistor may be used.†
12V
used for either PWM’ed or continuously energized loads), the
chip supply is sustained at a higher potential than the system
On
supply, which improves switching time.
ITRIP = VTRIP/RS
+2.75V to +30V
1N5817
= 1.7A
TRIP = R1/(R1+R2)
10µF
V
1/2 MIC5016
RS
0.06Ω
R1
1kΩ
V+
Input
1N4001 (2)
R4
Source
1kΩ
100nF
Gnd
Gate
1µF
LM301A
1/2 MIC5016
R2
120kΩ
2.2kΩ
V+
Control Input
ON
Input
OFF
Source
Gnd
Gate
IRF540
Figure 4. High Side Driver with Overcurrent Shutdown
† Suppliers of Precision Power Resistors:
Dale Electronics, Inc., 2064 12th Ave., Columbus, NE 68601. (402) 565-3131
International Resistive Co., P.O. Box 1860, Boone,NC 28607-1860.
(704) 264-8861
Isotek Corp., 566 Wilbur Ave. Swansea, MA 02777. (508) 673-2900
Kelvin, 14724 Ventura Blvd., Ste. 1003, Sherman Oaks, CA 91403-3501.
(818) 990-1192
RCD Components, Inc., 520 E. Industrial Pk. Dr., Manchester, NH 03103.
(603) 669-0054
Figure 3. Bootstrapped High-Side Driver
Ultronix, Inc., P.O. Box 1090, Grand Junction, CO 81502 (303) 242-0810
HighSideDriverWithCurrentSense(Figure4)Althoughno
current sense function is included on the MIC5016/17 de-
vices, a simple current sense function can be realized via the
addition of one more active component; an LM301A op amp
used as a comparator. The positive rail of the op amp is tied
to V+, and the negative rail is tied to ground. This op amp was
chosen as it can withstand having input transients that swing
below the negative rail, and has common mode range almost
to the positive rail.
High Side Driver With Delayed Current Sense (Figure 5)
Delay of the overcurrent detection to accomodate high inrush
loads such as incandescent or halogen lamps can be accom-
plished by adding an LM3905 timer as a one shot to provide
an open collector pulldown for the comparator output such
that the control input of the MIC5017 stays low for a preset
amount of time without interference from the current sense
circuitry. Note that an MIC5017 must be used in this applica-
tion (figure 5), as an inverting control input is necessary. The
delay time is set by the RC time constant of the external
componentsonpins3and4ofthetimer;inthiscase, 6mswas
chosen.
Theinvertingsideofthiscomparatoristiedtoavoltagedivider
which sets the voltage to V+ – VTRIP . The noninverting side
is tied to the node between the drain of the FET and the sense
resistor. Iftheovercurrenttrippointisnotexceeded,thisnode
will alwaysbe above V+ –VTRIP, andtheoutputofthecompara-
tor will be high which feeds the control input of the MIC5016
(polarities should be reversed if the MIC5017 is used). Once
the overcurrent trip point has been reached, the comparator
An LM3905 timer was used instead of a 555 as it provides a
clean transition, and is almost impossible to make oscillate.
Good bypassing and noise immunity is essential in this circuit
to prevent spurious op amp oscillations.
MIC5016/5017
6
October 1998
MIC5016/5017
Micrel
12V
12V
LM3905N
1
2
8
7
Trigger Logic
Emit
On
VREF
3
4
6
5
R/C
Gnd
Coll
V+
10µF
1/2 MIC5017
V+
RS
0.06Ω
R1
1kΩ
Input
1000pF
0.01µF
R4
Source
Gnd
1kΩ
Gate
R2
120kΩ
LM301A
2.2kΩ
1kΩ
Figure 5. High Side Driver with Delayed Overcurrent Shutdown
Typical Applications
applications, it is acceptable to allow this voltage to momen-
tarily turn the MOSFET back on as a way of dissipating the
inductor's current. However, if this occurs when driving a
solenoid valve with a fast switching speed, chemicals or
gases may inadvertantly be dispensed at the wrong time with
possibly disasterous consequences. Also, too large of a
kickbackvoltage(asisfoundinlargersolenoids)candamage
the MIC5016 or the power FET by forcing the Source node
below ground (the MIC5016 can be driven up to 20V below
ground before this happens). A catch diode has been
included in this design to provide an alternate route for the
inductive kickback current to flow. The 5kΩ resistor in series
with this diode has been included to set the recovery time of
Variable Supply Low Side Driver for Motor Speed Control
(Figure 6) The internal regulation in the MIC5016/17 allows
asteadygateenhancementtobesuppliedwhiletheMIC5016/
17 supply varies from 5V to 30V, without damaging the
internal gate to source zener clamp. This allows the speed of
the DC motor shown to be varied by varying the supply
voltage.
VCC = +5V to +30V
1/2 MIC5017
V+
M
the solenoid valve.
24V
ON
Input
OFF
Source
Gnd
Gate
IRF540
1/2 MIC5016
V+
ON
Input
OFF
Source
Gnd
Gate
IRFZ40
Figure 6: DC Motor Speed Control/Driver
SolenoidValveDriver(Figure7)Highpowersolenoidvalves
are used in many industrial applications requiring the timed
dispensing of chemicals or gases. When the solenoid is
activated, the valve opens (or closes), releasing (or stopping)
fluid flow. A solenoid valve, like all inductive loads, has a
considerable “kickback” voltage when turned off, as current
cannot change instantaneously through an inductor. In most
1N4005
ASCO
8320A
Solenoid
5kΩ
Figure 7: Solenoid Valve Driver
October 1998
7
MIC5016/5017
MIC5016/5017
Micrel
Incandescent/Halogen Lamp Driver (Figure 8) The combi- Motor Driver With Stall Shutdown (Figure 10) Tachometer
nation of an MIC5016/5017 and a power FET makes an feedback can be used to shut down a motor driver circuit when
effective driver for a standard incandescent or halogen lamp a stall condition occurs. The control switch is a 3-way type; the
load. Such loads often have high inrush currents, as the “START” position is momentary and forces the driver ON.
resistance of a cold filament is less than one-tenth as much as When released, the switch returns to the “RUN” position, and
when it is hot. Power MOSFETs are well suited to this the tachometer’s output is used to hold the MIC5016 input ON.
application as they have wider safe operating areas than do If the motor slows down, the tach output is reduced, and the
power bipolar transistors. It is important to check the SOA MIC5016 switches OFF. Resistor “R” sets the shutdown
curve on the data sheet of the power FET to be used against threshold.
the estimated or measured inrush current of the lamp in
question prior to prototyping to prevent “explosive” results.
12V
If overcurrent sense is to be used, first measure the duration
of the inrush, then use the topology of Figure 5 with the RC of
the timer chosen to accomodate the duration with suitable
10µF
1/2 MIC5016
guardbanding.
12V
V+
Input
10µF
330kΩ
1/2 MIC5016
V+
Source
Gnd
Gate
IRFZ44
Control Input
R
ON
Input
330kΩ
OFF
Source
Gnd
Gate
IRF540
1N4148
T
M
OSRAM
HLX64623
Figure 10. Motor Stall Shutdown
Figure 8: Halogen Lamp Driver
Relay Driver (Figure 9) Some power relay applications re-
quire the use of a separate switch or drive control, such as in
the case of microprocessor control of banks of relays where
a logic level control signal is used, or for drive of relays with
high power requirements. The combination of an MIC5016/
5017 and a power FET also provides an elegant solution to
power relay drive.
Simple DC-DC Converter (Figure 11) The simplest applica-
tion for the MIC5016 is as a basic one-chip DC-DC converter.
As the output (Gate) pin has a relatively high impedance, the
output voltage shown will vary significantly with applied load.
12V
5V
10µF
1/2 MIC5016
10µF
1/2 MIC5016
V+
Control Input
V+
ON
Input
OFF
Input
Source
Source
Gnd
Gate
IRF540
Guardian Electric
Gnd
Gate
VOUT = 12V
1725-1C-12D
Figure 11. DC - DC Converter
Figure 9: Relay Driver
MIC5016/5017
8
October 1998
MIC5016/5017
Micrel
This scheme works with no additional components as the
relative time difference between the rise and fall times of the
MIC5014 is large. However, this does mean that there is
considerable deadtime (time when neither driver is turned
on). If this circuit is used to drive an inductive load, catch
diodesmustbeusedoneachhalf toprovideanalternatepath
for the kickback current that will flow during this deadtime.
High Side Driver With Load Protection (Figure 12) Al-
though the MIC5016/17 devices are reverse battery pro-
tected, the load and power FET are not in a typical high side
configuration. In the event of a reverse battery condition, the
internal body diode of the power FET will be forward biased.
This allows the reversed supply to drive the load.
An MBR2035CT dual Schottky diode was used to eliminate
this problem. This particular diode can handle 20A continu-
ouscurrentand150Apeakcurrent;thereforeitshouldsurvive
the rigors of an automotive environment. The diodes are
paralleled to reduce the switch loss (forward voltage drop).
12V
This circuit is also a simple H-bridge which can be driven with
a PWM signal on the input for SMPS or motor drive applica-
tions in which high switching frequencies are not desired.
Synchronous Rectifier (Figure 14) In applications where
efficiencyintermsoflowforwardvoltagedropsandlow diode
reverse-recovery losses is critical, power FETs are used to
achieve rectification instead of a conventional diode bridge.
Here, the power FETs are used in the third quadrant of the IV
characteristic curve (FETs are installed essentially “back-
wards”). The two FETs are connected such that the top FET
turns on with the positive going AC cycle, and turns off when
it swings negative. The bottom FET operates opposite to the
top FET.
10µF
MBR2035CT
1/2 MIC5016
V+
NC
Control Input
ON
Input
NC
OFF
Source
Gnd
NC
Gate
IRF540
In the first quadrant of operation, the limitation of the device
is determined by breakdown voltage. Here, we are limited by
the turn-on of a parasitic p-n body drain diode. If it is allowed
to conduct, its reverse recovery time will crowbar the other
power FET and possibly destroy it. The way to prevent this
is to keep the IR drop across the device below the cut-in
voltageofthisdiode;thisisaccomplishedherebyusing afast
comparator to sense this voltage and feed the appropriate
signaltothecontrolinputsoftheMIC5016device. Obviously,
it is very important to use a comparator with a fast slew rate
suchastheLM393, andfastrecoverydiodes. 3mVofpositive
feedback is used on the comparator to prevent oscillations.
Figure 12: High Side Driver WIth Load Protection
Push-Pull Driver With No Cross-Conduction (Figure 13)
As the turn-off time of the MIC5016/17 devices is much faster
than the turn-on time, a simple dual push-pull driver with no
cross conduction can be made using one MIC5016 and one
MIC5017. The same control signal is applied to both inputs;
the MIC5016 turns on with the positive signal, and the
MIC5017 turns on when it swings low.
At 3A, with an RDS (ON) of 0.077Ω, our forward voltage drop
per FET is ~ 0.2 V as opposed to the 0.7 to 0.8 V drop that a
normal diode would have. Even greater savings can be had
by using FETs with lower RDS(ON)s, but care must be taken
that the peak currents and voltages do not exceed the SOA
of the chosen FET.
12V
IRFZ40
4
MIC5016
10µF
12
10
14
11
3
V+ A Gate A
2
6
5
V+ B Source A
In A
Gate B
IRFZ40
In B Source B
Gnd
Control Input 1
Control Input 2
10µF
1N914
4
1RF540
MIC5016
*
12
10
14
11
3
VOUT
VOUT
A
B
V+ A Gate A
V+ B Source A
1kΩ
110V AC
25.2V
2
6
5
VOUT
=
18V, 3A
12V
In A
Gate B
In B Source B
Gnd
4700µF
*
VCT
IRFZ40
4
MIC5017
1RF540
12
10
14
11
3
30mΩ
V+ A Gate A
56kΩ
1N914
2
6
5
V+ B Source A
10Ω
Caltronics
T126C3
1N914 (2)
10kΩ
In A
Gate B
IRFZ40
10kΩ
1/2 LM393
1kΩ
In B Source B
Gnd
*
Parasitic body diode
Figure 14: High Efficiency 60 Hz
Synchronous Rectifier
Figure 13: Push-Pull Driver
October 1998
9
MIC5016/5017
MIC5016/5017
Micrel
Package Information
.770 (19.558) MAX
PIN 1
.235 (5.969)
.215 (5.461)
.060 (1.524)
.045 (1.143)
.310 (7.874)
.280 (7.112)
.160 MAX
(4.064)
.080 (1.524)
.015 (0.381)
.015 (0.381)
.008 (0.2032)
.160 (4.064)
.100 (2.540)
.110 (2.794)
.090 (2.296)
.023 (.5842)
.015 (.3810)
.400 (10.180)
.330 (8.362)
.060 (1.524)
.045 (1.143)
14-Pin Plastic DIP (N)
PIN 1
DIMENSIONS:
INCHES (MM)
0.301 (7.645)
0.297 (7.544)
0.027 (0.686)
0.031 (0.787)
0.297 (7.544)
0.293 (7.442)
0.103 (2.616)
0.099 (2.515)
0.050 (1.270) 0.016 (0.046)
TYP TYP
0.022 (0.559)
0.018 (0.457)
7°
TYP
R
0.015
(0.381)
5°
TYP
0.330 (8.382)
0.326 (8.280)
0.015
(0.381)
MIN
0.409 (10.389)
0.405 (10.287)
10° TYP
0.094 (2.388)
0.090 (2.286)
SEATING
PLANE
0.032 (0.813) TYP
0.408 (10.363)
0.404 (10.262)
16-Pin Wide SOP (M)
MIC5016/5017
10
October 1998
MIC5016/5017
Micrel
October 1998
11
MIC5016/5017
MIC5016/5017
Micrel
MICREL INC. 1849 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL + 1 (408) 944-0800 FAX + 1 (408) 944-0970 WEB http://www.micrel.com
This information is believed to be accurate and reliable, however no responsibility is assumed by Micrel for its use nor for any infringement of patents or
other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent right of Micrel Inc.
© 1998 Micrel Incorporated
MIC5016/5017
12
October 1998
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