25AA160I/SN [MICROCHIP]

2K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8;
25AA160I/SN
型号: 25AA160I/SN
厂家: MICROCHIP    MICROCHIP
描述:

2K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总12页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
25AA080/160  
8K/16K 1.8V SPI Bus Serial EEPROM  
FEATURES  
PACKAGE TYPES  
• 3 MHz Clock Rate  
• SPI Modes 0,0 and 1,1.  
PDIP  
• Single supply with programming operation down  
to 1.8V  
• Low Power CMOS Technology  
- Max Write Current: 5 mA  
- Read Current: 1.0 mA  
- Standby Current: 1 µA typical  
• Organization  
- 1024 x 8 for 25AA080  
Vcc  
CS  
SO  
1
2
3
4
8
7
6
5
HOLD  
WP  
Vss  
SCK  
SI  
- 2048 x 8 for 25AA160  
• 16 Byte Page  
• Self-timed ERASE and WRITE Cycles  
• Sequential Read  
• Block Write Protection  
SOIC  
1
8
Vcc  
CS  
- Protect none, 1/4, 1/2, or all of Array  
• Built-in Write Protection  
- Power On/Off Data Protection Circuitry  
- Write Latch  
- Write Protect Pin  
• High Reliability  
- Endurance: 10M cycles (guaranteed)  
- Data Retention: >200 years  
- ESD protection: >4000 V  
• 8-pin PDIP/SOIC Packages  
Temperature ranges supported  
2
3
4
7
6
5
SO  
WP  
Vss  
HOLD  
SCK  
SI  
BLOCK DIAGRAM  
- Commercial (C):  
- Industrial (I):  
0°C to +70°C  
-40°C to +85°C  
Status  
Register  
HV Generator  
DESCRIPTION  
The Microchip Technology Inc. 25AA080/160 are 8K  
and 16K bit Serial Electrically Erasable PROMs. The  
memory is accessed via a simple Serial Peripheral  
Interface (SPI) compatible serial bus. The bus signals  
required are a clock input (SCK) plus separate data in  
(SI) and data out (SO) lines. Access to the device is  
controlled through a chip select (CS) input, allowing any  
number of devices to share the same bus.  
EEPROM  
Array  
Memory  
Control  
Logic  
X
I/O Control  
Logic  
Dec  
Page Latches  
WP  
SI  
There are two other inputs that provide the end user  
with additional flexibility. Communication to the device  
can be paused via the hold pin (HOLD). While the  
device is paused, transitions on its inputs will be  
ignored, with the exception of chip select, allowing the  
host to service higher priority interrupts. Also write  
operations to the Status Register can be disabled via  
the write protect pin (WP).  
Y Decoder  
SO  
CS  
SCK  
HOLD  
Sense Amp.  
R/W Control  
Vcc  
Vss  
SPI is a trademark of Motorola.  
1996 Microchip Technology Inc.  
Preliminary  
DS21146D-page 1  
This document was created with FrameMaker 4 0 4  
25AA080/160  
FIGURE 1-1: AC TEST CIRCUIT  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Vcc  
1.1  
Maximum Ratings*  
2.25 K  
VCC ....................................................................... 7.0V  
All inputs and outputs w.r.t. ......VSS-0.6V to VCC +1.0V  
Storage temperature .............................-65˚C to 150˚C  
Ambient temperature under bias...........-65˚C to 125˚C  
Soldering temperature of leads (10 seconds) ...+300˚C  
ESD protection on all pins...................................... 4kV  
SO  
1.8 K  
100 pF  
*Notice: Stresses above those listed under ‘Maximum ratings’  
may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device at those or  
any other conditions above those indicated in the operational  
listings of this specification is not implied. Exposure to maxi-  
mum rating conditions for extended period of time may affect  
device reliability.  
1.2  
AC Test Conditions  
AC Waveform:  
VLO = 0.2V  
VHI = Vcc - 0.2V  
VHI = 4.0V  
(Note 1)  
(Note 2)  
TABLE 1-1:  
Name  
PIN FUNCTION TABLE  
Function  
Timing Measurement Reference Level  
Input  
Output  
Note 1: For VCC 4.0V  
2: For VCC > 4.0V  
0.5 VCC  
0.5 VCC  
CS  
SO  
Chip Select Input  
Serial Data Output  
Serial Data Input  
Serial Clock Input  
Write Protect Pin  
Ground  
SI  
SCK  
WP  
VSS  
VCC  
HOLD  
Supply Voltage  
Hold Input  
TABLE 1-2:  
DC CHARACTERISTICS  
Applicable over recommended operating ranges shown below unless otherwise noted.  
VCC = +1.8V to 5.5V  
Commercial (C): Tamb  
Industrial (I): Tamb  
=
=
0˚C to +70˚C  
-40°C to +85°C  
Parameter  
Symbol  
Min  
Max  
Units  
Test Conditions  
High level input voltage  
VIH1  
2.0  
VCC+1  
V
VCC 2.7V  
VIH2  
VIL1  
0.7 VCC  
-0.3  
VCC+1  
0.8  
V
V
VCC< 2.7V  
Low level input voltage  
VCC 2.7V  
VIL2  
VOL  
VOH  
ILI  
-0.3  
0.3 VCC  
0.4  
V
V
VCC< 2.7V  
Low level output voltage  
High level output voltage  
Input leakage current  
Output leakage current  
IOL=2.1 mA  
VCC-0.5  
-10  
V
IOH=-400 µA  
10  
µA  
µA  
CS=VIH, VIN=VSS to VCC  
ILO  
-10  
10  
CS=VIH, V  
=VSS to VCC  
OUT  
Internal Capacitance  
(all inputs and outputs)  
CINT  
ICC WRITE  
ICC READ  
ICCS  
7
pF  
Tamb=25˚C, FCLK=3.0 MHz,  
VCC=5.5V (Note)  
Operating Current  
5
3
mA  
mA  
VCC=5.5V  
VCC=2.5V  
1
500  
mA  
µA  
VCC=5.5V; 3 MHz  
VCC=2.5V; 2 MHz  
Standby Current  
5
2
µA  
µA  
CS=VCC=5.5V; Vin=0V or VCC  
CS=VCC=2.5V; Vin=0V or VCC  
Note:  
This parameter is periodically sampled and not 100% tested.  
DS21146D-page 2  
Preliminary  
1996 Microchip Technology Inc.  
25AA080/160  
FIGURE 1-2: SERIAL INPUT TIMING  
tCSD  
CS  
tCLD  
tR  
tCSS  
tF  
tCSH  
SCK  
SI  
tSU  
tHD  
MSB in  
LSB in  
high impedance  
SO  
FIGURE 1-3: SERIAL OUTPUT TIMING  
CS  
tCSH  
tHI  
tLO  
SCK  
tV  
tDIS  
tHO  
MSB out  
LSB out  
SO  
SI  
don’t care  
FIGURE 1-4: HOLD TIMING  
CS  
tHH  
tHS  
tHS  
tHH  
SCK  
SO  
tHZ  
tHV  
high impedance  
don’t care  
n
n+2  
n+2  
n+1  
n
n-1  
tSU  
n
n+1  
n
n-1  
SI  
HOLD  
1996 Microchip Technology Inc.  
Preliminary  
DS21146D-page 3  
25AA080/160  
TABLE 1-3:  
AC CHARACTERISTICS  
Applicable over recommended operating ranges shown below unless otherwise noted.  
VCC = +1.8V to 5.5V  
Commercial (C): Tamb = 0˚C to +70˚C  
Industrial (I):  
Tamb = -40°C to +85°C  
Symbol  
Parameter  
Min  
Max  
Units  
Test Conditions  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
fSCK Clock Frequency  
3
2
1
MHz  
MHz  
MHz  
tCSS CS Setup Time  
tCSH CS Hold Time  
tCSD CS Disable Time  
100  
250  
500  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
100  
250  
500  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
250  
500  
500  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
tSU  
tHD  
Data Setup Time  
Data Hold Time  
30  
50  
50  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
50  
100  
100  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
tR  
tF  
CLK Rise Time  
CLK Fall Time  
Clock High Time  
2
2
µs  
µs  
(Note 1)  
(Note 1)  
tHI  
150  
250  
475  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
tLO  
Clock Low Time  
150  
250  
475  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
tCLD  
tV  
Clock Delay Time  
50  
ns  
Output Valid from  
Clock Low  
150  
250  
475  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
tHO  
tDIS  
Output Hold Time  
0
ns  
Output Disable Time  
200  
250  
500  
ns  
ns  
ns  
VCC=4.5V to 5.5V (Note 1)  
VCC=2.5V to 4.5V (Note 1)  
VCC=1.8V to 2.5V (Note 1)  
tHS  
tHH  
tHZ  
HOLD Setup Time  
100  
100  
200  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
HOLD Hold Time  
100  
100  
200  
ns  
ns  
ns  
VCC=4.5V to 5.5V  
VCC=2.5V to 4.5V  
VCC=1.8V to 2.5V  
HOLD Low to Output High-Z  
100  
150  
200  
ns  
ns  
ns  
VCC=4.5V to 5.5V (Note 1)  
VCC=2.5V to 4.5V (Note 1)  
VCC=1.8V to 2.5V (Note 1)  
tHV  
HOLD High to Output Valid  
100  
150  
200  
ns  
ns  
ns  
VCC=4.5V to 5.5V (Note 1)  
VCC=2.5V to 4.5V (Note 1)  
VCC=1.8V to 2.5V (Note 1)  
tWC  
Internal Write Cycle Time  
Endurance  
5
ms  
(Note 2)  
10M  
E/W  
25°C, Vcc = 5.0V, Block Mode (Note 3)  
Cycles  
Note 1: This parameter is periodically sampled and not 100% tested.  
2: twc begins on the rising edge of CS after a valid write sequence and ends when the internal self-timed write cycle is com-  
plete.  
3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please  
consult the Total Endurance Model which can be obtained on our BBS or website.  
DS21146D-page 4  
Preliminary  
1996 Microchip Technology Inc.  
This document was created with FrameMaker 4 0 4  
25AA080/160  
2.2  
Read Status Register (RDSR)  
2.0  
PRINCIPLES OF OPERATION  
The 25AA080/160 is an 1024/2048 byte EEPROM  
designed to interface directly with the Serial Peripheral  
Interface (SPI) port of many of today’s popular micro-  
controller families, including Microchip’s midrange  
PIC16CXX microcontrollers. It may also interface with  
microcontrollers that do not have a built-in SPI port by  
using discrete I/O lines programmed properly with soft-  
ware.  
The RDSR instruction provides access to the status  
register. The status register may be read at any time,  
even during a write cycle. The status register is format-  
ted as follows:  
7
6
5
4
3
2
1
0
WPEN  
X
X
X
BP1  
BP0  
WEL  
WIP  
The 25AA080/160 contains an 8-bit instruction register.  
The part is accessed via the SI pin, with data being  
clocked in on the rising edge of SCK. If the WPEN bit in  
the status register is set, the WP pin must be held high  
to allow writing to the non-volatile bits in the status reg-  
ister.  
The Write-In-Process (WIP) bit indicates whether the  
25AA080/160 is busy with a write operation. When set  
to a ‘1’ a write is in progress, when set to a ‘0’ no write  
is in progress. This bit is read only.  
The Write Enable Latch (WEL) bit indicates the status  
of the write enable latch. When set to a ‘1’ the latch  
allows writes to the array and status register, when set  
to a ‘0’ the latch prohibits writes to the array and status  
register. The state of this bit can always be updated via  
the WREN or WRDI commands regardless of the state  
of write protection on the status register.This bit is read  
only.  
Table 2-1 contains a list of the possible instruction bytes  
and format for device operation. All instructions,  
addresses and data are transferred MSB first, LSB last.  
Data is sampled on the first rising edge of SCK after CS  
goes low. If the clock line is shared with other peripheral  
devices on the SPI bus, the user can assert the HOLD  
input and place the 25AA080/160 in ‘HOLD’ mode.  
After releasing the HOLD pin, operation will resume  
from the point when the HOLD was asserted.  
The Block Protection (BP0 and BP1) bits indicate  
which blocks are currently write protected. These bits  
are set by the user issuing the WRSR instruction.  
These bits are non-volatile.  
2.1  
Write Enable (WREN) and Write  
Disable (WRDI)  
The Write Protect Enable (WPEN) bit is a non-volatile  
bit that is available as an enable bit for the WP pin. The  
Write Protect (WP) pin and the Write Protect Enable  
(WPEN) bit in the status register control the program-  
mable hardware write protect feature. Hardware write  
protection is enabled when WP pin is low and the  
WPEN bit is high. Hardware write protection is disabled  
when either the WP pin is high or the WPEN bit is low.  
When the chip is hardware write protected, only writes  
to non-volatile bits in the status register are disabled.  
See Table 2-2 for matrix of functionality on the WPEN  
bit and Figure 2-1 for a flowchart of Table 2-2.  
The 25AA080/160 contains a write enable latch. This  
latch must be set before any write operation will be  
completed internally. The WREN instruction will set the  
latch, and the WRDI will reset the latch.The following is  
a list of conditions under which the write enable latch  
will be reset:  
• Power-up  
• WRDI instruction successfully executed  
• WRSR instruction successfully executed  
• WRITE instruction successfully executed  
See Figure 3-5 for RDSR timing sequence.  
1996 Microchip Technology Inc.  
Preliminary  
DS21146D-page 5  
25AA080/160  
TABLE 2-1:  
INSTRUCTION SET  
Instruction Name Instruction Format  
Description  
WREN  
WRDI  
0000 0110  
0000 0100  
0000 0101  
0000 0001  
0000 0011  
0000 0010  
Set the write enable latch (enable write operations)  
Reset the write enable latch (disable write operations)  
Read status register  
RDSR  
WRSR  
READ  
WRITE  
Write status register (write protect enable and block write protection bits)  
Read data from memory array beginning at selected address  
Write data to memory array beginning at selected address  
TABLE 2-2:  
WPEN  
WRITE PROTECT FUNCTIONALITY MATRIX  
WP  
WEL  
Protected Blocks  
Unprotected Blocks  
Status Register  
0
0
1
1
X
X
X
0
1
0
1
0
1
Protected  
Protected  
Protected  
Protected  
Protected  
Protected  
Protected  
Writable  
Protected  
Writable  
Protected  
Writable  
Protected  
Writable  
X
Low  
Low  
High  
High  
Protected  
Protected  
Protected  
Writable  
FIGURE 2-1: WRITE TO STATUS REGISTER AND/OR ARRAY FLOWCHART  
CS Returns High  
Write  
to Status  
Reg?  
No  
No  
No  
No  
Write  
To other  
Commands  
to array?  
Yes  
Yes  
WEL = 1?  
Yes  
WEL = 1?  
Yes  
Write to the  
Unprotected Block  
No  
No  
WP is low?  
Yes  
Do not write to  
Array  
WPEN = 1?  
Yes  
Write to  
Status Register  
Do not write to  
Status Register  
From other  
Commands  
Continue  
DS21146D-page 6  
Preliminary  
1996 Microchip Technology Inc.  
25AA080/160  
transmitted, the CS must be brought high to set the  
write enable latch. If the write operation is initiated  
immediately after the WREN instruction without CS  
being brought high, the data will not be written to the  
array because the write enable latch will not have been  
properly set.  
2.3  
Write Status Register (WRSR)  
The WRSR instruction allows the user to select one of  
four protection options for the array by writing to the  
appropriate bits in the status register. The array is  
divided up into four segments. The user has the ability  
to write protect none, one, two, or all four of the seg-  
ments of the array.The partitioning is controlled as illus-  
trated in table below.  
Once the write enable latch is set, the user may pro-  
ceed by setting the CS low, issuing a write instruction,  
followed by the 16-bit address, with the five (25AA080)  
or six (25AA080) MSBs of the address being don’t care  
bits, and then the data to be written. Up to 16 bytes of  
data can be sent to the 25AA080/160 before a write  
cycle is necessary. The only restriction is that all of the  
bytes must reside in the same page. A page address  
begins with XXXX XXXX XXXX 0000 and ends with  
XXXX XXXX XXXX 1111. If the internal address  
counter reaches XXXX XXXX XXXX 1111 and the  
clock continues, the counter will roll back to the first  
address of the page and overwrite any data in the page  
that may have been written.  
See Figure 3-6 for WRSR timing sequence.  
TABLE 2-3:  
ARRAY PROTECTION  
Array Addresses  
Write Protected  
BP1  
BP0  
0
0
0
1
none  
upper 1/4  
300h-3FFh for 25AA080  
600h-7FFh for 25AA160  
1
1
0
1
upper 1/2  
200h-3FFh for 25AA080  
400h-7FFh for 25AA160  
For the data to be actually written to the array, the CS  
must be brought high after the least significant bit (D0)  
th  
of the n data byte has been clocked in. If CSis brought  
all  
high at any other time, the write operation will not be  
completed. See Figure 3-3 and Figure 3-4 for more  
detailed illustrations on the byte write sequence and the  
page write sequence, respectively.  
000h-3FFh for 25AA080  
000h-7FFh for 25AA160  
3.0  
DEVICE OPERATION  
While the write is in progress, the status register may  
be read to check the status of the WPEN, WIP, WEL,  
BP1, and BP0 bits. A read attempt of a memory array  
location will not be possible during a write cycle. When  
a write cycle is completed, the write enable latch is  
reset.  
3.1  
Clock and Data Timing  
Data input on the SI pin is latched on the rising edge of  
SCK. Data is output on the SO pin after the falling edge  
of SCK.  
3.2  
Read Sequence  
3.4  
Data Protection  
The part is selected by pulling CS low. The 8-bit read  
instruction is transmitted to the 25AA080/160 followed  
by the 16-bit address, with the five (25AA160) or six  
(25AA080) MSBs of the address being don’t care bits.  
After the correct read instruction and address are sent,  
the data stored in the memory at the selected address  
is shifted out on the SO pin. The data stored in the  
memory at the next address can be read sequentially  
by continuing to provide clock pulses. The internal  
address pointer is automatically incremented to the  
next higher address after each byte of data is shifted  
out. When the highest address is reached ($3FF for  
25AA080, $7FF for 25AA160) the address counter rolls  
over to address $000 allowing the read cycle to be con-  
tinued indefinitely. The read operation is terminated by  
setting CS high (see Figure 3-1).  
The following protection has been implemented to pre-  
vent inadvertent writes to the array:  
• The write enable latch is reset on power-up.  
• A write enable instruction must be issued to set  
the write enable latch.  
• After a successful byte write, page write, or status  
register write, the write enable latch is reset.  
• CS must be set high after the proper number of  
clock cycles to start an internal write cycle.  
• Access to the array during an internal write cycle  
is ignored and programming is continued.  
3.5  
Power On State  
The 25AA080/160 powers on in the following state:  
• The device is in low power standby mode (CS=1).  
• The write enable latch is reset.  
• SO is in high impedance state.  
3.3  
Write Sequence  
Prior to any attempt to write data to the 25AA080/160,  
the write enable latch must be set by issuing the WREN  
instruction (see Figure 3-2). This is done by setting CS  
low and then clocking the proper instruction into the  
25AA080/160. After all eight bits of the instruction are  
• A low level on CS is required to enter active state.  
1996 Microchip Technology Inc.  
Preliminary  
DS21146D-page 7  
25AA080/160  
FIGURE 3-1: READ SEQUENCE  
CS  
0
0
1
0
2
3
4
5
0
6
7
8
9 10 11  
21 22 23 24 25 26 27 28 29 30 31  
SCK  
SI  
instruction  
16 bit address  
1 15 14 13 12  
0
0
0
1
2
1
0
data out  
high impedance  
7
6
5
4
3
2
1
0
SO  
FIGURE 3-2: WRITE ENABLE SEQUENCE  
CS  
0
0
1
0
2
0
3
0
4
0
5
6
1
7
SCK  
SI  
1
0
high impedance  
SO  
FIGURE 3-3: WRITE SEQUENCE  
CS  
T
wc  
0
0
1
0
2
3
4
5
0
6
1
7
8
9 10 11  
21 22 23 24 25 26 27 28 29 30 31  
data byte  
SCK  
SI  
instruction  
16 bit address  
15 14 13 12  
0
0
0
0
2
1
0
7
6
5
4
3
2
1
0
high impedance  
SO  
DS21146D-page 8  
Preliminary  
1996 Microchip Technology Inc.  
25AA080/160  
FIGURE 3-4: PAGE WRITE SEQUENCE  
CS  
0
0
1
0
2
3
4
5
0
6
7
8
9
10 11  
21 22 23 24 25 26 27 28 29 30 31  
data byte 1  
SCK  
SI  
instruction  
16 bit address  
0
0
0
1
0 15 14 13 12  
2
1
0
7
6
5
4
3
2
1
0
CS  
32 33 34 35 36 37 38 39  
data byte 2  
41 42 43 44 45 46 47  
data byte 3  
40  
7
SCK  
SI  
data byte n (16 max)  
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
FIGURE 3-5: READ STATUS REGISTER SEQUENCE  
CS  
0
0
1
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
SCK  
SI  
instruction  
0
0
0
1
0
1
data from status register  
high impedance  
7
6
5
4
3
2
1
0
SO  
FIGURE 3-6: WRITE STATUS REGISTER SEQUENCE  
CS  
0
0
1
0
2
3
4
5
0
6
0
7
8
9
10 11 12 13 14 15  
SCK  
SI  
instruction  
data to status register  
7
6
5
4
3
2
1
0
0
0
0
1
high impedance  
SO  
1996 Microchip Technology Inc.  
Preliminary  
DS21146D-page 9  
25AA080/160  
4.5  
Write Protect (WP)  
4.0  
PIN DESCRIPTIONS  
This pin is used in conjunction with the WPEN bit in the  
status register to prohibit writes to the non-volatile bits  
in the status register. When WP is low and WPEN is  
high, writing to the non-volatile bits in the status register  
is disabled. All other operations function normally.  
When WP is high, all functions, including writes to the  
non-volatile bits in the status register operate normally.  
If the WPEN bit is set WP low during a status register  
write sequence will disable writing to the status register.  
If an internal write cycle has already begun, WP going  
low will have no effect on the write.  
4.1  
Chip Select (CS)  
A low level on this pin selects the device. A high level  
deselects the device and forces it into standby mode.  
However, a programming cycle which is already in  
progress will be completed, regardless of the CS input  
signal. If CS is brought high during a program cycle, the  
device will go into standby mode as soon as the pro-  
gramming cycle is complete. As soon as the device is  
deselected, SO goes to the high impedance state,  
allowing multiple parts to share the same SPI bus. A  
low to high transition on CS after a valid write sequence  
initiates an internal write cycle. After power-up, a low  
level on CS is required prior to any sequence being ini-  
tiated.  
The WP pin function is blocked when the WPEN bit in  
the status register is low. This allows the user to install  
the 25AA080/160 in a system with WP pin grounded  
and still be able to write to the status register. The WP  
pin functions will be enabled when the WPEN bit is set  
high.  
4.2  
Serial Input (SI)  
The SI pin is used to transfer data into the device. It  
receives instructions, addresses, and data. Data is  
latched on the rising edge of the serial clock.  
4.6  
Hold (HOLD)  
The HOLD pin is used to suspend transmission to the  
25AA080/160 while in the middle of a serial sequence  
without having to re-transmit the entire sequence over  
at a later time. It should be held high any time this func-  
tion is not being used. Once the device is selected and  
a serial sequence is underway, the HOLD pin may be  
pulled low to pause further serial communication with-  
out resetting the serial sequence. The HOLD pin must  
be brought low while SCK is low, otherwise the HOLD  
function will not be invoked until the next SCK high to  
low transition. The 25AA080/160 must remain selected  
during this sequence. The SI, SCK, and SO pins are in  
a high impedance state during the time the part is  
paused and transitions on these pins will be ignored.To  
resume serial communication, HOLD must be brought  
high while the SCK pin is low, otherwise serial commu-  
nication will not resume.  
It is possible for the SI pin and the SO pin to be tied  
together. With SI and SO tied together, two way com-  
munication of data can occur using only one microcon-  
troller I/O line.  
4.3  
Serial Output (SO)  
The SO pin is used to transfer data out of the 25AA080/  
160. During a read cycle, data is shifted out on this pin  
after the falling edge of the serial clock.  
It is possible for the SI pin and the SO pin to be tied  
together. With SI and SO tied together, two way com-  
munication of data can occur using only one microcon-  
troller I/O line.  
4.4  
Serial Clock (SCK)  
The SCK is used to synchronize the communication  
between a master and the 25AA080/160. Instructions,  
addresses, or data present on the SI pin are latched on  
the rising edge of the clock input, while data on the SO  
pin is updated after the falling edge of the clock input.  
DS21146D-page 10  
Preliminary  
1996 Microchip Technology Inc.  
25AA080/160  
25AA080/160 Product Identification System  
To order or to obtain information (e.g., on pricing or delivery), please use the listed part numbers, and refer to the factory or the listed  
sales offices.  
25AA080/160  
-
/P  
Package:  
P = Plastic DIP (300 mil body), 8 lead  
SN = Plastic SOIC (150 mil body), 8 lead  
Temperature  
Range:  
Blank = 0°C to +70°C  
I = -40°C to +85°C  
Device:  
SPI Bus Serial EEPROM  
25AA080/160  
25AA080T/160T  
SPI BUS EEPROM (Tape and Reel)  
Sales and Support  
Products supported by a preliminary Data Sheet may possibly have an errata sheet describing minor operational differences and  
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:  
1. Your local Microchip sales office (see next page)  
2. The Microchip Corporate Literature Center U.S. FAX: (602) 786-7277  
3. The Microchip’s Bulletin Board, via your local CompuServe number (CompuServe membership NOT required).  
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.  
For latest version information and upgrade kits for Microchip Development Tools, please call 1-800-755-2345 or 1-602-786-7302.  
1996 Microchip Technology Inc.  
Preliminary  
DS21146D-page 11  
WORLDWIDE SALES & SERVICE  
AMERICAS  
Corporate Office  
ASIA/PACIFIC  
Hong Kong  
EUROPE  
United Kingdom  
Microchip Technology Inc.  
Microchip Technology  
RM 3801B, Tower Two  
Metroplaza  
223 Hing Fong Road  
Kwai Fong, N.T. Hong Kong  
Tel: 852 2 401 1200 Fax: 852 2 401 3431  
India  
Microchip Technology  
No. 6, Legacy, Convent Road  
Bangalore 560 025 India  
Tel: 91 80 526 3148 Fax: 91 80 559 9840  
Arizona Microchip Technology Ltd.  
Unit 6, The Courtyard  
Meadow Bank, Furlong Road  
Bourne End, Buckinghamshire SL8 5AJ  
Tel: 44 1628 850303 Fax: 44 1628 850178  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 602 786-7200 Fax: 602 786-7277  
Technical Support: 602 786-7627  
Web: http://www.microchip.com  
France  
Atlanta  
Arizona Microchip Technology SARL  
Zone Industrielle de la Bonde  
2 Rue du Buisson aux Fraises  
91300 Massy - France  
Microchip Technology Inc.  
500 Sugar Mill Road, Suite 200B  
Atlanta, GA 30350  
Tel: 770 640-0034 Fax: 770 640-0307  
Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79  
Boston  
Korea  
Germany  
Microchip Technology Inc.  
5 Mount Royal Avenue  
Marlborough, MA 01752  
Tel: 508 480-9990 Fax: 508 480-8575  
Microchip Technology  
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Tel: 82 2 554 7200 Fax: 82 2 558 5934  
Shanghai  
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Tel: 49 89 627 144 0 Fax: 49 89 627 144 44  
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Tel: 708 285-0071 Fax: 708 285-0075  
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Tel: 972 991-7177 Fax: 972 991-8588  
Dayton  
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Arizona Microchip Technology SRL  
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Viale Colleoni 1  
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Milan Italy  
Microchip Technology  
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Tel: 86 21 6275 5700  
Fax: 011 86 21 6275 5060  
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#10-03 Prime Centre  
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Tel: 65 334 8870 Fax: 65 334 8850  
Taiwan, R.O.C  
Microchip Technology  
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Taipei, Taiwan, ROC  
Tel: 886 2 717 7175 Fax: 886 2 545 0139  
Tel: 39 39 6899939 Fax: 39 39 689 9883  
JAPAN  
Microchip Technology Intl. Inc.  
Benex S-1 6F  
3-18-20, Shin Yokohama  
Kohoku-Ku, Yokohama  
Kanagawa 222 Japan  
Two Prestige Place  
Miamisburg, OH 45342  
Tel: 513 291-1654 Fax: 513 291-9175  
Tel: 81 45 471 6166 Fax: 81 45 471 6122  
11/7/96  
Los Angeles  
Microchip Technology Inc.  
18201 Von Karman, Suite 1090  
Irvine, CA 92612  
Tel: 714 263-1888 Fax: 714 263-1338  
NewYork  
Microchip Technology Inc.  
150 Motor Parkway, Suite 416  
Hauppauge, NY 11788  
Tel: 516 273-5305 Fax: 516 273-5335  
San Jose  
Microchip Technology Inc.  
2107 North First Street, Suite 590  
San Jose, CA 95131  
Tel: 408 436-7950 Fax: 408 436-7955  
Toronto  
Microchip Technology Inc.  
5925 Airport Road, Suite 200  
Mississauga, Ontario L4V 1W1, Canada  
Tel: 905 405-6279 Fax: 905 405-6253  
All rights reserved. 1996, Microchip Technology Incorporated, USA. 11/96  
Printed on recycled paper.  
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No repre-  
sentation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement  
of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not autho-  
rized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.The Microchip logo and  
name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.  
DS21146D-page 12  
Preliminary  
1996 Microchip Technology Inc.  

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