- 最新上传
MSYSTEM
NEXPERIA
WJFT5-A1B-V
Dual Output Plug-in Signal Conditioners W-UNIT
MSYSTEM
HY1606U
N-Channel Enhancement Mode MOSFET
HUAYI
MSYSTEM
Schaffner
EATON
EATON
TE
MSYSTEM
TI
VITALCONN
10VF-0A0-R
High-density Signal Conditioners 10-RACK
MSYSTEM
GOODSKY
FVF-5W3-R
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
GOODSKY
TI
ZSSC4132CE4W
Automotive Resistive Sensor Signal Conditioner with LIN Interface
RENESAS
FVS-A1Z-K/K
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
NXP
ISP20EP10LM
SOT-223 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持逻辑电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
INFINEON
FVF-5WF-P
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
S-1009C37I-M5T1U
0.27uA CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING
ABLIC
WALSIN
WALSIN
WALSIN
FCR-F3-L/Q
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
SC105-271
SMD POWER INDUCTORS Open frame construction
BEL
EATON
MSYSTEM
- 元器件品牌
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
