TC2015-2.85VCT_技术文档

TC2014/2015/2185

M

50 mA, 100 mA, 150 mA CMOS LDOs with

Shutdown and Reference Bypass

Features

General Description

• Low Supply Current: 80 µA (Max)

The TC2014, TC2015 and TC2185 are high-accuracy

(typically ±0.4%) CMOS upgrades for bipolar low drop-

out regulators, such as the LP2980. Total supply cur-

rent is typically 55 µA; 20 to 60 times lower than in

bipolar regulators.

• Low Dropout Voltage: 140 mV (Typ) @ 150 mA

• High Output Voltage Accuracy: ±0.4% (Typ)

• Standard or Custom Output Voltages

• Power-Saving Shutdown Mode

• Reference Bypass Input for Ultra Low-Noise

Operation

• Fast Shutdown Response Time: 60 µsec (Typ)

• Over-Current Protection

• Space-Saving 5-Pin SOT-23A Package

• Pin Compatible Upgrades for Bipolar Regulators

• Wide Operating Temperature Range:

-40°C to +125°C

The key features of the device include low noise oper-

ation (plus bypass reference), low dropout voltage

– typically 45 mV for the TC2014, 90 mV for the

TC2015, and 140 mV for the TC2185, at full load – and

fast response to step changes in load. Supply current

is reduced to 0.5 µA (max) and V

falls to zero when

OUT

the shutdown input is low. The devices also incorporate

over-current protection.

The TC2014, TC2015 and TC2185 are stable with an

output capacitor of 1 µF and have a maximum output

current of 50 mA, 100 mA and 150 mA, respectively.

For higher output versions, see the TC1107

(DS21356), TC1108 (DS21357) and TC1173

Applications

• Battery Operated Systems

• Portable Computers

• Medical Instruments

• Instrumentation

(DS21362) (I

= 300 mA) datasheets.

OUT

Related Literature

• Cellular / GSM / PHS Phones

• Linear Post-Regulator for SMPS

• Pagers

• Application Notes: AN765, AN766, AN776 and

AN792

Typical Application

Package Type

1

5

V_OUT

V_IN

V_OUT

V_IN

5-Pin SOT-23A

+

V_OUT

5

Bypass

4

1 µF

2

TC2014

TC2015

TC2185

GND

TC2015

TC2185

2

1

3

V_IN

GND SHDN

3

4

SHDN

Bypass

0.01 µF

Reference

Bypass Cap

(Optional)

Shutdown Control

(from Power Control Logic)

 2003 Microchip Technology Inc.

DS21662C-page 1

TC2014/2015/2185

1.0

ELECTRICAL

PIN FUNCTION TABLE

CHARACTERISTICS

Name

Function

Absolute Maximum Ratings †

V

GND

SHDN

Bypass

Unregulated Supply Input

Ground Terminal

Shutdown Control Input

Reference Bypass Input

Regulated Voltage Output

IN

Input Voltage ................................................................... 6.5V

Output Voltage ....................................... (– 0.3) to (V_IN+ 0.3)

Operating Temperature ......................... – 40°C < T_J< 125°C

Storage Temperature ................................. – 65°C to +150°C

Maximum Voltage on Any Pin ................ V_IN+0.3V to – 0.3V

Maximum Junction Temperature.................................. 150°C

V

OUT

† Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operation listings of this specification is not implied. Exposure

to maximum rating conditions for extended periods may affect

device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, V_IN= V_R+ 1V, I_L= 100 µA, C_OUT= 3.3 µF, SHDN > V_IH, T_A= +25°C.

BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Operating Voltage

Maximum Output

Current

V_IN

I_OUTMAX

2.7

50

100

150

—

6.0

—

V

mA

Note 1

TC2014

TC2015

TC2185

Note 2

—

Output Voltage

V_OUT

V_R- 2.0% V_R± 0.4% V_R+ 2.0%

V

V_OUTTemperature

Coefficient

TCV_OUT

—

20

40

—

ppm/°C Note 3

Line Regulation

Load Regulation

(Note 4)

∆V_OUT/∆V_IN

∆V_OUT/V_OUT

—

0.05

0.33

0.43

2

0.5

+1.0

+2.0

—

%

(V_R+ 1V) < V_IN< 6V

TC2014;TC2015: I_L= 0.1 mA to I_OUTMAX

TC2185: I_L= 0.1 mA to I_OUTMAXNote 4

-1.0

-2.0

—

Dropout Voltage

V_IN- V_OUT

mV

Note 5

I_L= 100 µA

I_L= 50 mA

—

45

70

—

90

140

55

140

210

80

TC2015; TC2185 I_L= 100 mA

TC2185

I_L= 150 mA

Supply Current

I_IN

µA

SHDN = V_IH, I_L=0

SHDN = 0V

Shutdown Supply

Current

I_INSD

0.05

0.5

Note 1: The minimum V_INhas to meet two conditions: V_IN= 2.7V and V_IN= V_R+ V_DROPOUT

.

2:

3:

V_Ris the regulator output voltage setting. For example: V_R= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.

–6

(V_OUTMAX– V_OUTMIN) × 10

---------------------------------------------------------------------------

=

TCV_OUT

V

_OUT× ∆T

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the thermal regulation specification.

5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal

value at a V differential.

6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to I_MAXat V_IN= 6V for T = 10 msec.

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-

perature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA).

8: Time required for V_OUTto reach 95% of V_R(output voltage setting), after V_SHDNis switched from 0 to V_IN

.

DS21662C-page 2

 2003 Microchip Technology Inc.

TC2014/2015/2185

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise specified, V_IN= V_R+ 1V, I_L= 100 µA, C_OUT= 3.3 µF, SHDN > V_IH, T_A= +25°C.

BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Power Supply

Rejection Ratio

PSRR

—

55

—

dB

F ≤ 1 kHz, Cbypass=0.01 µF

Output Short Circuit

Current

I_OUTSC

—

160

300

mA

V_OUT= 0V

Thermal Regulation

Output Noise

∆V_OUT/∆P_D

—

0.04

200

—

V/W

Note 6, Note 7

eN

nV/√Hz I_L= I_OUTMAX, F = 10 kHz

470 pF from Bypass to GND

Response Time,

(Note 8)

T_R

—

60

—

µsec

V_IN= 4V, I_L= 30 mA,

_IN= 1 µF, C_OUT= 10 µF

C

(from Shutdown Mode)

SHDN Input

SHDN Input High

V_IH

V_IL

60

—

%V_INV_IN= 2.5V to 6.0V

Threshold

SHDN Input Low

Threshold

—

15

Note 1: The minimum V_INhas to meet two conditions: V_IN= 2.7V and V_IN= V_R+ V_DROPOUT

.

2:

3:

V_Ris the regulator output voltage setting. For example: V_R= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.

–6

(V_OUTMAX– V_OUTMIN) × 10

---------------------------------------------------------------------------

=

TCV_OUT

V

_OUT× ∆T

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the thermal regulation specification.

5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal

value at a V differential.

6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to I_MAXat V_IN= 6V for T = 10 msec.

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-

perature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA).

8: Time required for V_OUTto reach 95% of V_R(output voltage setting), after V_SHDNis switched from 0 to V_IN

.

 2003 Microchip Technology Inc.

DS21662C-page 3

TC2014/2015/2185

2.0

TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C

= 3.3 µF, SHDN > V , T = +25°C.

IN

R

L

OUT

IH

A

63.0

60.0

57.0

54.0

51.0

48.0

45.0

1.820

1.815

1.810

1.805

1.800

1.795

1.790

1.785

V_IN= 2.8V

V_IN= 6.0V

V_R= 1.8V

C

_OUT= 3.3 µF

V_IN= 6.0V

V_IN= 2.8V

V_R= 1.8V

C_OUT= 3.3 µF

I_L= 150 mA

Junction Temperature (°C)

FIGURE 2-1:

Supply Current vs. Junction

FIGURE 2-4:

Output Voltage vs. Junction

Temperature.

Temperature (150 mA).

0.8

0.6

0.4

0.2

0

1.82

T_A= -45°C

T_A= +25°C

1.815

1.81

T_A= -45°C

1.805

1.8

T_A= +125°C

-0.2

1.795

1.79

V_R= 1.8V

C_OUT= 3.3 µF

_L= 150 mA

-0.4

-0.6

-0.8

C

_OUT= 3.3 µF

I_L= 150 mA

I

1.785

2.8 3.2 3.6

4

4.4 4.8 5.2 5.6

6

2.8 3.2 3.6

4

4.4 4.8 5.2 5.6

6

Supply Voltage (V)

FIGURE 2-2:

Load Regulation vs. Supply

FIGURE 2-5:

Output Voltage vs. Supply

Voltage.

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

1.810

V_R= 1.8V

C_OUT= 3.3 µF

V_R= 1.8V

_OUT= 3.3 µF

I_L= 0.1 mA

C

V_IN= 2.8V

V_IN= 6.0V

I_L= 150 mA

1.805

1.800

1.795

1.790

I_L= 100 mA

I_L= 50 mA

I_L= 20 mA

Note: Dropout Voltage is not

a tested parameter for 1.8V.

_IN(min) ! 2.7V

0.05

0.00

V

Junction Temperature (°C)

FIGURE 2-3:

Output Voltage vs. Junction

FIGURE 2-6:

Dropout Voltage vs.

Temperature (0.1 mA).

Junction Temperature.

DS21662C-page 4

 2003 Microchip Technology Inc.

TC2014/2015/2185

Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C

= 3.3 µF, SHDN > V , T = +25°C.

IN

R

L

OUT

IH

A

60.0

58.0

56.0

54.0

52.0

50.0

48.0

46.0

44.0

2.705

2.700

2.695

2.690

2.685

2.680

2.675

2.670

2.665

V_R= 2.7V

C_OUT= 3.3 µF

V_IN= 3.7V

V_IN= 6.0V

V_IN= 2.8V

V_R= 2.7V

_OUT= 3.3 µF

_L= 150 mA

C

I

Temperature (°C)

Junction Temperature (°C)

FIGURE 2-7:

Supply Current vs. Junction

FIGURE 2-10:

Output Voltage vs. Junction

Temperature.

Temperature (150 mA).

0.5

0.3

2.705

2.7

2.695

2.69

2.685

2.68

2.675

2.67

2.665

T_A= +25°C

T_A= -45°C

T_A= +25°C

0.1

-0.1

T_A= +125°C

V_R= 2.7V

-0.3

-0.5

C_OUT= 3.3 µF

I_L= 150 mA

C_OUT= 3.3 µF

T_A= +125°C

I_L= 150 mA

3.7

4

4.3

4.6

4.9

5.2

5.5

5.8

3.7

4

4.3 4.6 4.9 5.2 5.5 5.8

Supply Voltage (V)

FIGURE 2-8:

Load Regulation vs. Supply

FIGURE 2-11:

Output Voltage vs. Supply

Voltage.

2.690

2.688

2.686

2.684

2.682

2.680

2.678

2.676

2.674

2.672

2.670

0.160

V_R= 2.7V

C_OUT= 3.3 µF

I_L= 150 mA

V_IN= 6.0V

0.120

0.080

0.040

0.000

V_IN= 3.7V

I_L= 100 mA

I_L= 50 mA

I_L= 20 mA

V_R= 2.7V

C

_OUT= 3.3 µF

I

_L= 0.1 mA

Junction Temperature (°C)

FIGURE 2-9:

Output Voltage vs. Junction

FIGURE 2-12:

Dropout Voltage vs.

Temperature (0.1 mA).

Junction Temperature.

 2003 Microchip Technology Inc.

DS21662C-page 5

TC2014/2015/2185

Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C

= 3.3 µF, SHDN > V , T = +25°C.

IH A

IN

R

L

OUT

60

57

54

51

48

45

0.12

0.10

0.08

0.06

0.04

0.02

0.00

V_R= 5.0V

C_OUT= 3.3 µF

V_IN= 6.0V

I_L= 150 mA

I_L= 100 mA

I_L= 50 mA

V_R= 5.0V

_OUT= 3.3 µF

C

Junction Temperature (°C)

FIGURE 2-13:

Supply Current vs. Junction

FIGURE 2-16:

Dropout Voltage vs.

Temperature.

Junction Temperature.

V

C

= 3.8V

= 2.8V

= 1 µF Ceramic

5.01

5.00

4.99

4.98

4.97

4.96

4.95

4.94

4.93

IN

OUT

IN

I_L= 150 mA

C

= 1 µF Ceramic

OUT

Frequency = 1 kHz

V

OUT

100mV/DIV

I_L= 100 mA

I_L= 0.1 mA

V_R= 5.0V

C_OUT= 3.3 µF

_IN= 6.0V

V

Load Current

150mA

Load

100mA

Junction Temperature (°C)

FIGURE 2-14:

Output Voltage vs. Junction

FIGURE 2-17:

(C = 1 µF).

Load Transient Response.

Temperature (150 mA).

OUT

V

C

= 3.0V

IN

0.40

0.30

= 2.8V

OUT

= 1 µF Ceramic

= 10 µF Ceramic

IN

I_L= 150 mA

OUT

Frequency = 10 kHz

0.20

0.10

0.00

-0.10

-0.20

-0.30

-0.40

100mV / DIV

V

OUT

I_L= 100 mA

I_L= 50 mA

V_R= 5.0V

C

_OUT= 3.3 µF

Load Current

V_IN= 6.0 V

150mA

Load

100mA

Junction Temperature (°C)

FIGURE 2-15:

Load Regulation vs.

FIGURE 2-18:

(C = 10 µF).

Load Transient Response.

Junction Temperature.

OUT

DS21662C-page 6

 2003 Microchip Technology Inc.

TC2014/2015/2185

Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C

= 3.3 µF, SHDN > V , T = +25°C.

IH A

IN

R

L

OUT

FIGURE 2-19:

(C = 1 µF).

Line Transient Response.

FIGURE 2-22:

Wake-Up Response.

OUT

0

V_IN= 4.0V

V_INAC= 100 mV

_OUTDC= 3.0V

C_OUT= 1µF Ceramic

V

OUT

-10

-20

-30

-40

-50

-60

-70

C_BYPASS= 0.01 µF Ceramic

100mV/DIV

V

150mA

I_OUT= 150 mA

I_OUT= 100 mA

I_OUT= 50 mA

100mA

V

= 3.105V

IN

= 3.006V

OUT

C

R

= 1 µF Ceramic

IN

10

100

1k

1000

10k

100k

1M

10 00 10 00 100000

= 10 µF Ceramic

OUT

LOAD

= 20 Ω

0

Frequency (Hz)

FIGURE 2-20:

Dropout. (C

Load Transient Response in

FIGURE 2-23:

(C

PSRR vs. Frequency

= 10 µF).

= 1 µF Ceramic).

OUT

0

-10

-20

-30

-40

-50

-60

-70

V_IN= 4.0V

C_OUT= 10 µF Ceramic

C_BYPASS= 0.01 µF Ceramic

V

_INAC= 100 mV

_OUTDC= 3.0V

I_OUT= 150 mA

I_OUT= 100 mA

10

100

1k

1000

10k

100k

1M

10000 100000 100000

0

Frequency (Hz)

FIGURE 2-21:

Shutdown Delay Time.

FIGURE 2-24:

(C

PSRR vs. Frequency

= 10 µF Ceramic).

OUT

 2003 Microchip Technology Inc.

DS21662C-page 7

TC2014/2015/2185

Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C

= 3.3 µF, SHDN > V , T = +25°C.

IH A

IN

R

L

OUT

10

10.00

0

-10

-20

-30

-40

-50

-60

-70

V_IN= 4.0V

C_OUT= 10 µF Tantalum

I_OUT= 150 mA

V_OUTDC= 3.0V

I_OUT= 100 µA

C_BYPASS= 470 pF

V_INAC= 100 mV

V_OUTDC= 3.0V

1

1.000

C_BYPASS= 0 µF

0.1

0.100

C_OUT= 10 µF

C_OUT= 1 µF

C_BYPASS= 0.01 µF

0.10

0.010

10

100

1k

1000

10k

100k

1M

10 00 10 00 100000

0.001

0

100

1k

10k

1000 10000 100000 100000

100k

1M

10

0

Frequency (Hz)

FIGURE 2-25:

(C

PSRR vs. Frequency

FIGURE 2-26:

Output Noise vs. Frequency.

= 10 µF Tantalum).

OUT

DS21662C-page 8

 2003 Microchip Technology Inc.

TC2014/2015/2185

3.3

Shutdown Control Input (SHDN)

3.0

PIN DESCRIPTIONS

The regulator is fully enabled when a logic high is

applied to SHDN. The regulator enters shutdown when

a logic low is applied to this input. During shutdown,

output voltage falls to zero and supply current is

reduced to 0.5 µA (max).

The descriptions of the pins are described in Table 3-1.

TABLE 3-1:

Pin No.

PIN FUNCTION TABLE

Symbol

Description

1

2

3

4

5

V

Unregulated supply input

Ground terminal

Shutdown control input

Reference bypass input

Regulated voltage output

IN

3.4

Reference Bypass Input (Bypass)

GND

SHDN

Bypass

Connecting a low value ceramic capacitor to this pin

will further reduce output voltage noise and improve the

Power Supply Ripple Rejection (PSRR) performance

of the LDO. Typical values from 470 pF to 0.01 µF are

suggested. Smaller and larger values can be used but

do affect the speed at which the LDO output voltage

rises when input power is applied. The larger the

bypass capacitor, the slower the output voltage will

rise.

V

OUT

3.1

Unregulated Supply Input (V )

IN

Connect unregulated input supply to the V pin. If

IN

there is a large distance between the input supply and

the LDO regulator some input capacitance is neces-

sary for proper operation. A 1 µF capacitor connected

3.5

Regulated Voltage Output (V

)

OUT

of the LDO. Also con-

from

V

to ground is recommended for most

IN

applications.

Connect the output load to V

nect one side of the LDO output de coupling capacitor

as close as possible to the V pin.

OUT

3.2

Ground Terminal (GND)

OUT

Connect the unregulated input supply ground return to

GND. Also connect one side of the 1 µF typical input

decoupling capacitor close to this pin and one side of

the output capacitor C

to this pin.

OUT

 2003 Microchip Technology Inc.

DS21662C-page 9

TC2014/2015/2185

4.1

Bypass Input

4.0

DETAILED DESCRIPTION

A 0.01 µF ceramic capacitor connected from the

Bypass input to ground reduces noise present on the

internal reference, which in turn significantly reduces

output noise. If output noise is not a concern, this input

may be left unconnected. Larger capacitor values may

be used, but the result is a longer time period to rated

output voltage when power is initially applied.

The TC2014, TC2015 and TC2185 are precision fixed

output voltage regulators (If an adjustable version is

needed, see the TC1070, TC1071 or TC1187

(DS21353) datasheet.) Unlike bipolar regulators, the

TC2014, TC2015 and TC2185 supply current does not

increase with load current. In addition, the LDO output

voltage is stable using 1 µF of ceramic or tantalum

capacitance over the entire specified input voltage

range and output current range.

4.2

Output Capacitor

Figure 4-1 shows a typical application circuit. The reg-

A 1 µF (min) capacitor from V

to ground is required.

OUT

ulator is enabled any time the shutdown input (SHDN)

The output capacitor should have an esr (effective

series resistance) of 0.01Ω to 5Ω for V ≥ 2.5V, and

is at or above V , and disabled (shutdown) when

IH

OUT

SHDN is at or below V . SHDN may be controlled by a

0.05Ω. to 5Ω for V

< 2.5V. Ceramic, tantalum or alu-

IL

OUT

CMOS logic gate or I/O port of a microcontroller. If the

SHDN input is not required, it should be connected

directly to the input supply. While in shutdown, supply

minum electrolytic capacitors can be used. When using

ceramic capacitors, X5R and X7R dielectric material

are recommended due to their stable tolerance over

temperature. However, other dielectrics can be used as

long as the minimum output capacitance is maintained.

current decreases to 0.05 µA (typical) and V

zero volts.

falls to

OUT

4.3

Input Capacitor

1

5

V_OUT

A 1 µF capacitor should be connected from V to GND

V_OUT

V_IN

IN

if there is more than 10 inches of wire between the reg-

ulator and this AC filter capacitor, or if a battery is used

as the power source. Aluminum, electrolytic or tanta-

lum capacitors can be used (Since many aluminum

electrolytic capacitors freeze at approximately -30°C,

solid tantalum are recommended for applications oper-

ating below -25°C). When operating from sources other

than batteries, supply-noise rejection and transient

response can be improved by increasing the value of

the input and output capacitors and employing passive

filtering techniques.

+

1 µF

Battery

2

TC2014

GND

TC2015

TC2185

3

4

SHDN

Bypass

0.01 µF

Reference

Bypass Cap

(Optional)

Shutdown Control

(from Power Control Logic)

FIGURE 4-1:

Typical Application Circuit.

DS21662C-page 10

 2003 Microchip Technology Inc.

TC2014/2015/2185

The P equation can be used in conjunction with the

5.0

5.1

THERMAL CONSIDERATIONS

Power Dissipation

D

P

equation to ensure regulator thermal operation

DMAX

is within limits. For example:

The amount of power the regulator dissipates is prima-

rily a function of input voltage, output voltage and

output current.

The following equation is used to calculate worst-case

power dissipation:

Given:

V

I

= 3.0V +10%

= 2.7V – 2.5%

= 40 mA

= +125°C

= +55°C

INMAX

OUTMIN

LOADMAX

T

JMAX

EQUATION

AMAX

P

≈ (V_INMAX– V_OUTMIN)I_LMAX

D

Find:

Where:

1. Actual power dissipation

P

= Worst-case actual power dissipation

= Maximum voltage on V

= Minimum regulator output voltage

= Maximum output (load) current

2. Maximum allowable dissipation

D

V

INMAX

OUTMIN

LMAX

IN

Actual power dissipation:

I

P_D= (V_INMAX– V_OUTMIN)I_LMAX

The maximum allowable power dissipation (P

) is

[(3.0 × 1.1) – (2.7 × 0.975)]40 × 10^–3

DMAX

--------------------------------------------------------------------------------------------

a function of the maximum ambient temperature

=

220

(T

), the maximum allowable die temperature

AMAX

= 26.7mW

) (+125°C) and the thermal resistance from junc-

JMAX

tion-to-air (θ ). The 5-Pin SOT-23A package has a θ

JA

of approximately 220°C/Watt when mounted on a

typical two layer FR4 dielectric copper clad PC board.

Maximum allowable power dissipation:

T

_JMAX– T_AMAX

--------------------------------------

P_DMAX

=

θ_JA

EQUATION

T

_JMAX– T_AMAX

125 – 55

--------------------

--------------------------------------

=

P_DMAX

220

θ_JA

= 318mW

Where all terms are previously defined.

In this example, the TC2014 dissipates a maximum of

only 26.7 mW; far below the allowable limit of 318 mW.

In a similar manner, the P equation and P

equa-

DMAX

D

tion can be used to calculate maximum current and/or

input voltage limits.

5.2

Layout Considerations

The primary path of heat conduction out of the package

is via the package leads. Therefore, layouts having a

ground plane, wide traces at the pads and wide power

supply bus lines combine to lower θ and, therefore,

JA

increase the maximum allowable power dissipation

limit.

 2003 Microchip Technology Inc.

DS21662C-page 11

TC2014/2015/2185

6.0

6.1

PACKAGING INFORMATION

Package Marking Information

cdef

c&d represents part number code + temperature

range and voltage

(V)

TC2014

TC2015

TC2185

1.8

2.5

2.7

2.8

2.85

3.0

3.3

PA

PB

PC

PD

PE

PF

PG

RA

RB

RC

RD

RE

RF

RG

UA

UB

UC

UD

UE

UF

UG

represents year and 2-month period code

represents lot ID number

e

f

DS21662C-page 12

 2003 Microchip Technology Inc.

TC2014/2015/2185

5-Lead Plastic Small Outline Transistor (OT) (SOT23)

E

E1

p

B

p1

D

n

1

α

c

A

A2

φ

A1

L

β

Units

Dimension Limits

INCHES*

NOM

MILLIMETERS

MIN

MAX

MIN

NOM

MAX

n

p

p1

A

A2

A1

E

E1

D

L

φ

c

B

α

β

Number of Pins

Pitch

Outside lead pitch (basic)

Overall Height

Molded Package Thickness

5

.038

.075

.046

.043

.003

.110

.064

.116

.018

5

0.95

1.90

1.18

1.10

0.08

2.80

1.63

2.95

0.45

5

.035

.000

.102

.059

.110

.014

0

.057

0.90

1.45

.051

.006

.118

.069

.122

.022

10

.008

.020

10

0.90

0.00

2.60

1.50

2.80

0.35

0

0.09

0.35

0

1.30

0.15

3.00

1.75

3.10

0.55

10

0.20

0.50

10

Standoff

§

Overall Width

Molded Package Width

Overall Length

Foot Length

Foot Angle

Lead Thickness

Lead Width

.004

.014

0

.006

.017

5

0.15

0.43

5

Mold Draft Angle Top

Mold Draft Angle Bottom

0

5

10

0

5

10

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MO-178

Drawing No. C04-091

 2003 Microchip Technology Inc.

DS21662C-page 13

TC2014/2015/2185

NOTES:

DS21662C-page 14

 2003 Microchip Technology Inc.

TC2014/2015/2185

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

PART NO.

Device

-XX

X

XXXX

a)

b)

c)

TC2014-1.8VCTTR:5LD SOT-23-A, 1.8V,

Output

Voltage

Temperature

Range

Package

Tape and Reel.

TC2014-2.85VCTTR: 5LD SOT-23-A,

2.85V, Tape and Reel.

TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V,

Tape and Reel.

Device:

TC2014: 50 mA LDO with Shutdown and VREF Bypass

TC2015: 100 mA LDO with Shutdown and VREF Bypass

TC2185: 150 mA LDO with Shutdown and VREF Bypass

a)

b)

c)

TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V,

Tape and Reel.

TC2015-2.85VCTTR: 5LD SOT-23-A,

2.85V, Tape and Reel.

TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V,

Tape and Reel.

Output Voltage:

XX

=

1.8V

2.7V

2.8V

3.0V

3.3V

a)

b)

TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V,

Tape and Reel.

TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V,

Tape and Reel.

Temperature Range:

Package:

V

=

-40°C to +125°C

CTTR

=

Plastic Small Outline Transistor (SOT-23),

5-lead, Tape and Reel

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-

mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2003 Microchip Technology Inc.

DS21662C-page15

TC2014/2015/2185

NOTES:

DS21662C-page 16

 2003 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such

acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications. No

representation or warranty is given and no liability is assumed

by Microchip Technology Incorporated with respect to the

accuracy or use of such information, or infringement of patents

or other intellectual property rights arising from such use or

otherwise. Use of Microchip’s products as critical components in

life support systems is not authorized except with express

written approval by Microchip. No licenses are conveyed,

implicitly or otherwise, under any intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, KEELOQ,

MPLAB, PIC, PICmicro, PICSTART, PRO MATE and

PowerSmart are registered trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL

and The Embedded Control Solutions Company are registered

trademarks of Microchip Technology Incorporated in the U.S.A.

Accuron, dsPIC, dsPICDEM.net, ECONOMONITOR,

FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming,

ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,

MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net,

PowerCal, PowerInfo, PowerTool, rfPIC, Select Mode,

SmartSensor, SmartShunt, SmartTel and Total Endurance are

trademarks of Microchip Technology Incorporated in the U.S.A.

and other countries.

Serialized Quick Turn Programming (SQTP) is a service mark of

Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received QS-9000 quality system

certification for its worldwide headquarters,

design and wafer fabrication facilities in

Chandler and Tempe, Arizona in July 1999

and Mountain View, California in March 2002.

The Company’s quality system processes and

procedures are QS-9000 compliant for its

®

PICmicro 8-bit MCUs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals,

non-volatile memory and analog products. In

addition, Microchip’s quality system for the

design and manufacture of development

systems is ISO 9001 certified.

 2003 Microchip Technology Inc.

DS21662C - page 17

M

WORLDWIDE SALES AND SERVICE

Japan

AMERICAS

ASIA/PACIFIC

Microchip Technology Japan K.K.

Benex S-1 6F

Corporate Office

Australia

2355 West Chandler Blvd.

Microchip Technology Australia Pty Ltd

Suite 22, 41 Rawson Street

Epping 2121, NSW

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

Chandler, AZ 85224-6199

Tel: 480-792-7200 Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: http://www.microchip.com

Australia

Tel: 61-2-9868-6733 Fax: 61-2-9868-6755

Korea

China - Beijing

Rocky Mountain

Microchip Technology Korea

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

Microchip Technology Consulting (Shanghai)

Co., Ltd., Beijing Liaison Office

Unit 915

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7966 Fax: 480-792-4338

Bei Hai Wan Tai Bldg.

Tel: 82-2-554-7200 Fax: 82-2-558-5934

Atlanta

No. 6 Chaoyangmen Beidajie

Beijing, 100027, No. China

Tel: 86-10-85282100 Fax: 86-10-85282104

Singapore

3780 Mansell Road, Suite 130

Alpharetta, GA 30022

Microchip Technology Singapore Pte Ltd.

200 Middle Road

Tel: 770-640-0034 Fax: 770-640-0307

China - Chengdu

#07-02 Prime Centre

Boston

Microchip Technology Consulting (Shanghai)

Co., Ltd., Chengdu Liaison Office

Rm. 2401-2402, 24th Floor,

Singapore, 188980

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848 Fax: 978-692-3821

Tel: 65-6334-8870 Fax: 65-6334-8850

Taiwan

Ming Xing Financial Tower

Microchip Technology (Barbados) Inc.,

Taiwan Branch

No. 88 TIDU Street

Chicago

Chengdu 610016, China

333 Pierce Road, Suite 180

Itasca, IL 60143

11F-3, No. 207

Tel: 86-28-86766200 Fax: 86-28-86766599

Tung Hua North Road

Taipei, 105, Taiwan

China - Fuzhou

Tel: 630-285-0071 Fax: 630-285-0075

Microchip Technology Consulting (Shanghai)

Co., Ltd., Fuzhou Liaison Office

Unit 28F, World Trade Plaza

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

Dallas

4570 Westgrove Drive, Suite 160

Addison, TX 75001

EUROPE

Austria

No. 71 Wusi Road

Tel: 972-818-7423 Fax: 972-818-2924

Fuzhou 350001, China

Microchip Technology Austria GmbH

Durisolstrasse 2

Detroit

Tel: 86-591-7503506 Fax: 86-591-7503521

Tri-Atria Office Building

China - Hong Kong SAR

A-4600 Wels

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248-538-2250 Fax: 248-538-2260

Microchip Technology Hongkong Ltd.

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Austria

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark

Kwai Fong, N.T., Hong Kong

Kokomo

Tel: 852-2401-1200 Fax: 852-2401-3431

2767 S. Albright Road

Kokomo, Indiana 46902

Tel: 765-864-8360 Fax: 765-864-8387

Microchip Technology Nordic ApS

Regus Business Centre

Lautrup hoj 1-3

China - Shanghai

Microchip Technology Consulting (Shanghai)

Co., Ltd.

Ballerup DK-2750 Denmark

Tel: 45 4420 9895 Fax: 45 4420 9910

Los Angeles

Room 701, Bldg. B

18201 Von Karman, Suite 1090

Irvine, CA 92612

Far East International Plaza

No. 317 Xian Xia Road

France

Microchip Technology SARL

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Tel: 949-263-1888 Fax: 949-263-1338

Shanghai, 200051

San Jose

Tel: 86-21-6275-5700 Fax: 86-21-6275-5060

Microchip Technology Inc.

2107 North First Street, Suite 590

San Jose, CA 95131

China - Shenzhen

Batiment A - ler Etage

Microchip Technology Consulting (Shanghai)

Co., Ltd., Shenzhen Liaison Office

91300 Massy, France

Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79

Tel: 408-436-7950 Fax: 408-436-7955

Rm. 1812, 18/F, Building A, United Plaza

No. 5022 Binhe Road, Futian District

Shenzhen 518033, China

Germany

Toronto

Microchip Technology GmbH

Steinheilstrasse 10

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699 Fax: 905-673-6509

Tel: 86-755-82901380 Fax: 86-755-82966626

D-85737 Ismaning, Germany

China - Qingdao

Tel: 49-89-627-144 0 Fax: 49-89-627-144-44

Rm. B503, Fullhope Plaza,

Italy

No. 12 Hong Kong Central Rd.

Qingdao 266071, China

Microchip Technology SRL

Centro Direzionale Colleoni

Palazzo Taurus 1 V. Le Colleoni 1

20041 Agrate Brianza

Tel: 86-532-5027355 Fax: 86-532-5027205

India

Milan, Italy

Microchip Technology Inc.

India Liaison Office

Tel: 39-039-65791-1 Fax: 39-039-6899883

Divyasree Chambers

United Kingdom

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-2290061 Fax: 91-80-2290062

Microchip Ltd.

505 Eskdale Road

Winnersh Triangle

Wokingham

Berkshire, England RG41 5TU

Tel: 44 118 921 5869 Fax: 44-118 921-5820

12/05/02

DS21662C-page 18

 2003 Microchip Technology Inc.


型号：	TC2015-2.85VCT
厂家：	MICROCHIP
描述：	2.8 V FIXED POSITIVE LDO REGULATOR, 0.14 V DROPOUT, PDSO5, SC-74A, SOT-23A, 5 PIN 光电二极管输出元件调节器
文件：	总18页 (文件大小：355K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TC2015-2.85VCT [MICROCHIP]

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