VN2224ND [MICROCHIP]
240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET;
| 型号： | VN2224ND |
| 厂家： | 
MICROCHIP |
| 描述： | 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 输入元件 开关 晶体管 |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN2222
VN2224
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
ID(ON)
BVDSS
/
RDS(ON)
BVDGS
(max)
(min)
5.0A
5.0A
TO-92
–
20-Pin C-Dip
VN2222NC
–
Die†
–
220V
1.25Ω
1.25Ω
240V
VN2224N3
VN2224ND
† MIL visual screening available
Advanced DMOS Technology
High Reliability Devices
These enhancement-mode (normally-off) transistors utilize a
verticalDMOSstructureandSupertex’swell-provensilicon-gate
manufacturingprocess. Thiscombinationproducesdeviceswith
thepowerhandlingcapabilitiesofbipolartransistorsandwiththe
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
■ Free from secondary breakdown
■ Low power drive requirement
■ Ease of paralleling
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
■ Low CISS and fast switching speeds
■ Excellent thermal stability
■ Integral Source-Drain diode
■ High input impedance and high gain
Package Options
Applications
1
2
20
19
18
17
16
15
14
13
12
11
S
S
■ Motor controls
S
S
■ Converters
3
S
NC
D1
D2
D3
D4
NC
S
■ Amplifiers
4
G1
G2
G3
G4
S
■ Switches
5
■ Power supply circuits
6
■ Drivers (relays, hammers, solenoids, lamps,
7
memories, displays, bipolar transistors, etc.)
8
9
Absolute Maximum Ratings
S
Drain-to-Source Voltage
Drain-to-Gate Voltage
BVDSS
BVDGS
10
S
S
S G D
Gate-to-Source Voltage
± 20V
-55°C to +150°C
300°C
top view
20-pin Ceramic DIP
TO-92
Operating and Storage Temperature
Soldering Temperature*
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
7-203
VN2222/VN2224
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
0.9A
5.0A
1.0W
125
170
0.9A
5.0A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSS
Drain-to-Source
Breakdown Voltage
VN2224
VN2222
240
220
V
VGS = 0V, ID = 5mA
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
1.0
3.0
-5
V
mV/°C
nA
VGS = VDS, ID = 5mA
Change in VGS(th) with Temperature
Gate Body Leakage
-4
1
VGS = VDS, ID = 5mA
100
50
5
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
IDSS
Zero Gate Voltage Drain Current
µA
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
2
5
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 2A
A
10
1.0
0.9
1.0
2.2
300
85
Static Drain-to-Source
ON-State Resistance
RDS(ON)
1.5
1.25
1.4
Ω
VGS = 10V, ID = 2A
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
%/°C
Ω
1.0
350
150
35
VGS = 0V, VDS = 25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
20
6
15
VDD = 25V
ID = 2A
RGEN = 10Ω
Rise Time
16
25
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
65
90
30
60
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
0.8
500
1.0
V
VGS = 0V, ISD = 100mA
VGS = 0V, ISD = 1A
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
7-204
VN2222/VN2224
Typical Performance Curves
Output Characteristics
Saturation Characteristics
10
10
8
V
= 10V
8V
6V
GS
8
6
4
2
0
V
= 10V
GS
8V
6V
4V
6
4V
3V
4
2
3V
0
0
2
4
6
8
10
0
0
1
10
20
30
40
50
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
5
4
3
2
1
0
10
V
= 25V
DS
T
= -55°C
A
5
T
= 25°C
A
T
= 125°C
TO-92
A
0
5
10
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1
1.0
0.8
0.6
0.4
0.2
0
0.1
TO-92 (DC)
0.01
0.001
TO-92
TC = 25°C
PD = 1W
T
= 25°C
C
10
100
1000
0.001
0.01
0.1
1
10
VDS (volts)
tp (seconds)
7-205
VN2222/VN2224
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
5
4
3
2
1.1
1.0
0.9
V
= 5V
GS
V
= 10V
1
0
GS
-50
0
50
100
150
0
-50
0
2
4
6
8
10
ID (amperes)
Tj (°C)
Transfer Characteristics
= 25V
V(th) and RDS Variation with Temperature
2.4
2.0
1.6
1.2
0.8
0.4
1.4
1.2
1.0
10
V
DS
V
@ 5mA
th
R
DS
@ 10V, 2A
T
= -55°C
A
25°C
125°C
5
0.8
0.6
0.4
0
0
2
4
6
8
10
0
50
100
150
V
GS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
VDS = 10V
400
10
8
f = 1MHz
CISS
300
VDS = 40V
733 pF
6
200
100
4
COSS
CRSS
2
0
300 pF
0
6
0
10
20
30
40
2
4
8
10
QG (nanocoulombs)
VDS (volts)
7-206
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