1N3154A-1-3%
更新时间:2024-09-18 13:47:44
品牌:MICROSEMI
描述:Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN
1N3154A-1-3% 概述
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN 齐纳二极管
1N3154A-1-3% 规格参数
是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-7 |
包装说明: | O-LALF-W2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.48 |
其他特性: | METALLURGICAL BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-204AA |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
最大功率耗散: | 0.5 W | 认证状态: | Not Qualified |
标称参考电压: | 8.4 V | 表面贴装: | NO |
技术: | ZENER | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 电压温度Coeff-Max: | 0.84 mV/°C |
最大电压容差: | 4.76% | Base Number Matches: | 1 |
1N3154A-1-3% 数据手册
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PDF下载1N3154 thru 1N3157, A, -1, e3
8.4 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes
provides a selection of 8.4 V nominal voltages and temperature coefficients to
as low as 0.001 %/oC for minimal voltage change with temperature when
operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are
also available in JAN, JANTX, and JANTXV military qualifications. As a further
option for commercial product, they are available as RoHS Compliant with an
e3 suffix added to the part number. Microsemi also offers numerous other
Zener Reference Diode products for a variety of other voltages from 6.2 V to
200 V.
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
JEDEC registered 1N3154 thru 1N3157A series
•
•
•
•
Provides minimal voltage changes over a broad
temperature range
Standard reference voltage of 8.4V +/- 5% with tighter
tolerances available
For instrumentation and other circuit designs
requiring a stable voltage reference
•
1N3154, 3155, 3156, and 3157 also have military
qualification to MIL-PRF-19500/158 up to the
JANTXV level by adding JAN, JANTX, or JANTXV
prefixes to part numbers as well as “-1” suffix, e.g.
JANTX1N3157-1, etc.
Maximum temperature coefficient selections
available from 0.01%/ºC to 0.001%/ºC
Tight reference voltage tolerances at the 8.4 V
nominal is available by adding tolerance 1%, 2%,
3%, etc. after the part number for identification e.g.
1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.
•
•
•
Internal metallurgical bonds
JANS Equivalent available via SCD
•
•
Flexible axial-lead mounting terminals
Radiation Hardened devices available by changing
1N prefix to RH, e.g. RH3156, RH3157, RH3157A,
etc. Also consult factory for “RH” data sheet
brochure
Nonsensitive to ESD per MIL-STD-750 Method 1020
•
RoHS Compliant devices available by adding an “e3”
suffix (not applicable to military)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & StorageTemperature: -65oC to +175oC
•
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
DC Power Dissipation: 500 mW @ TL = 25oC and
maximum current IZM of 55 mA. NOTE: For optimum
voltage-temperature stability, IZ = 10.0 mA (less than
90 mW in dissipated power)
•
TERMINALS: Tin-Lead (military) or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750, Method 2026
•
Solder temperatures: 260 oC for 10 s (maximum)
•
•
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with the
banded end positive with respect to the opposite end
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
•
WEIGHT: 0.2 grams.
See package dimensions on last page
Copyright © 2005
7-18-2005 REV B
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N3154 thru 1N3157, A, -1, e3
8.4 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
VOLTAGE
MAXIMUM
REVERSE
CURRENT
IR @ 5.5 V
MAXIMUM
ZENER
IMPEDANCE
(Note 2)
ZZT
TEMPERATURE
STABILITY
(Note 3 & 4)
ΔVZT
EFFECTIVE
TEMPERATURE
COEFFICIENT
αVZ
ZENER
VOLTAGE
VZ @ IZT
ZENER
TEST
CURRENT
IZT
JEDEC
TYPE
NUMBERS
(Notes 1, 5
& 6)
TEMPERATURE
RANGE
(Note 1)
MAXIMUM
VOLTS
mA
OHMS
mV
oC
%/oC
μA
10
10
10
10
10
10
10
10
1N3154
1N3154A
1N3155
1N3155A
1N3156
1N3156A
1N3157
1N3157A
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
10
10
10
10
10
10
10
10
15
15
15
15
15
15
15
15
130
172
65
86
26
34
13
17
-55 to +100
-55 to +150
-55 to +100
-55 to +150
-55 to +100
-55 to +150
-55 to +100
-55 to +150
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
*JEDEC Registered Data.
NOTES:
1. When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance,
e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.
2. Measured by superimposing 1.0 mA ac rms on 10 mA dc @ 25oC.
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
4. Voltage measurements to be performed 15 seconds after application of dc current.
5. The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by
adding JAN, JANTX, or JANTXV prefix to part numbers as well as “-1” suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc.
6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH3157A instead of 1N3157A.
GRAPHS
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 10mA.
EXAMPLE: A diode in this series is operated at a current of
10mA and has specified Temperature Coefficient (TC) limits of
+/-0.005%/oC. To obtain the typical Temperature Coefficient
limits for this same diode operated at a current of 7.5mA, the
new TC limits (%/oC) can be estimated using the graph in
FIGURE 1.
At a test current of 7.5mA the change in Temperature Coefficient
(TC) is approximately –0.0012%.oC. The algebraic sum of +/-
0.005%oC and –0.0012%/oC gives the new estimated limits of
+0.0038%/oC and -0.0062%/oC.
IZ – Operating Current (mA)
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
Copyright © 2005
7-18-2005 REV B
Microsemi
Scottsdale Division
Page 2
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N3154 thru 1N3157, A, -1, e3
8.4 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
This curve in Figure 2 illustrates the change of
diode voltage arising from the effect of
impedance. It is in effect, an exploded view of
the zener operating region of the I-V
characteristic.
In conjunction with Figure 1, this curve can be
used to estimate total voltage regulation under
conditions of both varying temperature and
current.
IZ – Operating Current (mA)
FIGURE 2
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT.
DIMENSIONS
All dimensions in INCH
mm
Copyright © 2005
7-18-2005 REV B
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N3154A-1-3% 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
1N3154A-1-3%E3 | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-1-3%E3TR | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-1E3 | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-1E3TR | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-1TR | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-2% | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-2%E3 | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-2%E3TR | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-2%TR | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 | |
1N3154A-3% | MICROSEMI | Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
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