1N4460USE3 [MICROSEMI]

Zener Diode, 6.2V V(Z), 5%, 1.5W;
1N4460USE3
元器件型号: 1N4460USE3
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Zener Diode, 6.2V V(Z), 5%, 1.5W

测试二极管
PDF文件: 总6页 (文件大小:443K)
下载文档:  下载PDF数据表文档文件
型号参数:1N4460USE3参数
是否Rohs认证 符合
生命周期Active
IHS 制造商MICROSEMI CORP
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8541.10.00.50
风险等级5.1
配置SINGLE
二极管类型ZENER DIODE
最大动态阻抗4 Ω
JESD-609代码e3
元件数量1
最高工作温度175 °C
峰值回流温度(摄氏度)250
最大功率耗散1.5 W
标称参考电压6.2 V
子类别Voltage Reference Diodes
表面贴装YES
端子面层PURE MATTE TIN OVER COPPER
处于峰值回流温度下的最长时间30
最大电压容差5%
工作测试电流40 mA
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
1N4460US – 1N4496US and
1N6485US – 1N6491US
VOIDLESS HERMETICALLY SEALED SURFACE
MOUNT 1.5 WATT GLASS ZENER DIODES
Qualified per MIL-PRF-19500/406
DESCRIPTION
T
his surface mount, Zener voltage regulator series is military qualified to MIL-PRF-19500/406
Available on
commercial
versions
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 1.5 watt Zener voltage regulators are hermetically sealed with void-less glass
construction using an internal metallurgical bond. It includes Zener selections from 3.3 to 200
volts in standard 5% tolerance. 1% and 2% tolerance versions are also available. Microsemi
also offers numerous other Zener products to meet higher and lower power ratings in both
thru-hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Surface mount equivalent of popular JEDEC registered series.
Void-less hermetically sealed glass package.
Triple-layer passivation.
Extremely robust construction.
Internal
“Category 1”
metallurgical bonds for 1N4462US thru 1N4496US and “Category
III”
for
1N6485US thru 1N6491US as well as 1N4460US and 1N4461US.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/406.
RoHS compliant versions available (commercial grade only).
“A” (D-5A) MELF
Package
Also available in:
DO-41 Package
(axial-lead)
1N4460 – 1N4496 and
1N6485 – 1N6491
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current and temperature range.
Extensive selection from 3.3 to 200 V.
Standard voltage tolerances are plus/minus 5% with no suffix.
Tighter tolerances available in plus or minus 2% or 1%.
Non-sensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
@ T
A
= 25
o
C unless otherwise specified
Parameters/Test Conditions
Junction and Storage Temperature
Steady State Power Dissipation @ T
A
= 25 ºC
Thermal Resistance Junction-to-End Cap
1N4462 – 1N4496
Thermal Impedance @ 10 ms
1N6485 – 1N6491
1N4460 – 1N4461
Forward Voltage
@ 200 mA
@ 1.0 A
Solder Temperature @ 10 s
Symbol
T
J
& T
STG
P
D
R
ӨJEC
Z
ӨJX
V
F
T
SP
Value
-65 to +175
1.5
20
Figure 3
Figure 4
Figure 4
1.0
1.5
260
Unit
C
W
o
C/W
ºC/W
o
V
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
T4-LDS-0183-1, Rev. 1 (120901)
©2012 Microsemi Corporation
Page 1 of 6
1N4460US – 1N4496US and
1N6485US – 1N6491US
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over copper.
MARKING: Polarity band only.
POLARITY: Cathode indicated by band.
TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
WEIGHT: 193 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See
Electrical Characteristics
table)
1N4460 US
C
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tolerance Level
Blank = 5 %
C=2%
D = 1%
MELF Surface Mount
Symbol
V
Z
I
Z
, I
ZT
, I
ZK
Z
ZT
or Z
ZK
V
F
I
R
I
ZM
I
ZSM
SYMBOLS & DEFINITIONS
Definition
Zener Voltage: The Zener voltage the device will exhibit at a specified current (I
Z
) in its breakdown region.
Regulator Current: The dc regulator current (I
Z
), at a specified test point (I
ZT
), near breakdown knee (I
ZK
).
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of I
ZT
or I
ZK
) and superimposed on I
ZT
or I
ZK
respectively.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
Maximum Zener Surge Current: The non-repetitive peak value of Zener surge current at a specified wave form.
T4-LDS-0183-1, Rev. 1 (120901)
©2012 Microsemi Corporation
Page 2 of 6
1N4460US – 1N4496US and
1N6485US – 1N6491US
ELECTRICAL CHARACTERISTICS
@ 25 ºC Case temperature
NOMINAL
ZENER
VOLTAGE
V
Z
Volts
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
15.0
16.0
18.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
39.0
43.0
47.0
51.0
56.0
62.0
68.0
75.0
82.0
91.0
100.0
110.0
120.0
130.0
150.0
160.0
180.0
200.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
TEST
MAXIMUM
CURRENT
DYNAMIC
IMPEDANCE
I
ZT
Z
ZT
@ I
ZT
mA
40.0
37.0
34.0
31.0
28.0
25.0
23.0
21.0
19.0
17.0
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.7
1.6
1.4
1.2
76.0
69.0
64.0
58.0
53.0
49.0
45.0
Ohms
4
2.5
2.5
3
4
5
6
7
8
9
10
11
12
14
16
18
20
25
27
30
40
50
60
70
80
100
130
160
200
250
300
400
500
700
1000
1300
1500
10
10
9
9
8
7
5
MAXIMUM KNEE
IMPEDANCE
Z
ZK
@ I
ZK
MAXIMUM
REVERSE
CURRENT
I
R
@ V
R
µA
10.0
5.0
1.0
.50
.30
.30
.30
.20
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
50
50
35
5.0
4.0
1.0
0.5
Volts
3.72
4.08
4.50
4.92
5.46
8.00
8.80
9.60
10.4
12.0
12.8
14.4
16.0
17.6
19.2
21.6
24.0
26.4
28.8
31.2
34.4
37.6
40.8
44.8
49.6
54.4
60.0
65.6
72.8
80.0
88.0
96.0
104.0
120.0
128.0
144.0
160.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
MAXIMUM
CONTINUOUS
CURRENT
I
ZM
(Note 1)
mA
230
210
191
174
157
143
130
119
110
95
90
79
71
65
60
53
48
43
40
37
33
30
28
26
23
21
19
17
16
14
13
12
11
9.5
8.9
7.9
7.2
433
397
366
332
304
280
255
SURGE
CURRENT
@ 8.3 ms
square wave
I
ZSM
Amps
2.3
2.1
1.9
1.7
1.6
1.4
1.3
1.2
1.1
.95
.90
.79
.71
.65
.60
.53
.48
.43
.40
.37
.33
.30
.28
.26
.23
.21
.19
.17
.16
.14
.13
.12
.11
.095
.089
.079
.072
4.2
3.9
3.6
3.3
3.0
2.7
2.5
TYPE
1N4460US
1N4461US
1N4462US
1N4463US
1N4464US
1N4465US
1N4466US
1N4467US
1N4468US
1N4469US
1N4470US
1N4471US
1N4472US
1N4473US
1N4474US
1N4475US
1N4476US
1N4477US
1N4478US
1N4479US
1N4480US
1N4481US
1N4482US
1N4483US
1N4484US
1N4485US
1N4486US
1N4487US
1N4488US
1N4489US
1N4490US
1N4491US
1N4492US
1N4493US
1N4494US
1N4495US
1N4496US
1N6485US
1N6486US
1N6487US
1N6488US
1N6489US
1N6490US
1N6491US
NOTE:
Ohms
200
200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
400
400
400
400
500
500
600
mA
1.0
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1. See “Maximum
Ratings”
for P
D
temperature conditions for end-cap package where I
ZM
is applicable.
T4-LDS-0183-1, Rev. 1 (120901)
©2012 Microsemi Corporation
Page 3 of 6
1N4460US – 1N4496US and
1N6485US – 1N6491US
GRAPHS
ZENER VOLTAGE
TEMPERATURE COEFFICIENT (%/°C)
FIGURE 1
Temperature Coefficient Characteristics
DC Operation Maximum Rating (W)
T
EC
(°C) (End Cap)
FIGURE 2
Temperature-Power Derating Curve
T4-LDS-0183-1, Rev. 1 (120901)
©2012 Microsemi Corporation
Page 4 of 6
1N4460US – 1N4496US and
1N6485US – 1N6491US
GRAPHS
(continued)
Z
θJX
-(°C/W)
t
H
(Heating time) ms
FIGURE 3
Thermal Impedance Curve for 1N4462US through 1N4496US
Z
θJX
-(°C/W)
t
H
(Heating time) ms
FIGURE 4
Thermal Impedance Curve for 1N6485US through 1N6491US and 1N4460US through 1N4461US
T4-LDS-0183-1, Rev. 1 (120901)
©2012 Microsemi Corporation
Page 5 of 6
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