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元器件品牌
APT06DC60HJ
[MICROSEMI]
ISOTOP SiC Diode Full Bridge Power Module; ISOTOP碳化硅二极管全桥电源模块
元器件型号：
APT06DC60HJ
生产厂家：
MICROSEMI CORPORATION
描述和应用：
ISOTOP SiC Diode Full Bridge Power Module
ISOTOP碳化硅二极管全桥电源模块
电源电路 整流二极管 桥式整流二极管 局域网
PDF文件：
总3页 (文件大小：71K)
下载文档：
下载PDF数据表文档文件
型号参数：APT06DC60HJ参数
查看货源
APT1001
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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163
ADPOW
APT1001
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
48
ADPOW
APT100-101DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
33
ETC
APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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44
ETC
APT1001R1AVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
35
ADPOW
APT1001R1BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
: Undefined variable $rtag in
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on line
156
-
106
ADPOW
APT1001R1BN-BUTT
暂无描述
Warning
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on line
156
-
0
ADPOW
APT1001R1BN-GULLWING
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ADPOW
APT1001R1BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
33
ETC
APT1001R1BNR-GULLWING
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1001R1BVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
43
ADPOW
APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
21
ETC
APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
20
ETC
APT1001R1HVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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32
ADPOW
APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
12
ETC
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