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APT1101R2BFLL [MICROSEMI]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
APT1101R2BFLL
型号: APT1101R2BFLL
厂家: Microsemi    Microsemi
描述:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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文件: 总5页 (文件大小:105K)
中文:  中文翻译
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APT1101R2SFLL

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APT1101R2SFLL

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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APT1101RBFLLG

Power Field-Effect Transistor, 13A I(D), 1100V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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APT11044B2FLLG

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Volts:1100V RDS(ON)0.44Ohms ID(cont):26Amps|FREDFETs ( fast body diode)

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APT11044LFLLG

Power Field-Effect Transistor, 26A I(D), 1100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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