APT13F120B_09 [MICROSEMI]

N-Channel FREDFET; N沟道FREDFET


型号：	APT13F120B_09
厂家：	Microsemi
描述：	N-Channel FREDFET N沟道FREDFET
文件：	总4页 (文件大小：118K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT13F120B

APT13F120S

1200V, 14A, 1.2Ω Max t , ≤250ns

N-Channel FREDFET

Power MOS 8^™is a high speed, high voltage N-channel switch-mode power MOSFET.

D³PAK

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C /C result in excellent noise immunity and low switching loss. The

rss iss

APT13F120B

APT13F120S

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

Single die FREDFET

FEATURES

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Fast switching with low EMI

• Half bridge

• Low t for high reliability

• PFC and other boost converter

• Buck converter

• Ultra low C

for improved noise immunity

rss

• Low gate charge

• Single and two switch forward

• Flyback

• Avalanche energy rated

• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter

Unit

Ratings

Continuous Drain Current @ T_C= 25°C

I_D

Continuous Drain Current @ T_C= 100°C

Pulsed Drain Current ¹

I_DM

V_GS

E_AS

I_AR

±±0

1070

Gate-Source Voltage

Single Pulse Avalanche Energy ²

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Characteristic

Min

Typ

Max

625

Unit

P_D

Total Power Dissipation @ T_C= 25°C

R_θJC

0.20

Junction to Case Thermal Resistance

°C/W

°C

R_θCS

0.11

Case to Sink Thermal Resistance, Flat, Greased Surface

T_J,T_STG

-55

150

±00

Operating and Storage Junction Temperature Range

T_L

Soldering Temperature for 10 Seconds (1.6mm from case)

0.22

6.2

W_T

Package Weight

in·lbf

N·m

Torque

Mounting Torque ( TO-247 Package), 6-±2 or M± screw

1.1

MicrosemiWebsite-http://www.microsemi.com

Static Characteristics

T = 25°C unless otherwise speciﬁed

APT13F120B_S

Parameter

Test Conditions

Min

Typ

Max

Unit

Symbol

V_BR(DSS)

= 0V, I = 250µA

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁcient

Drain-Source On Resistance ^±

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁcient

1200

ΔV_BR(DSS)/ΔT_J

Reference to 25°C, I = 250µA

V/°C

1.41

.91

= 10V, I = 7A

R_DS(on)

V_GS(th)

1.2

2.5

= V_DS, I = 1mA

ΔV_GS(th)/ΔT_J

mV/°C

-10

= 1200V

= 0V

T = 25°C

250

1000

±100

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

µA

T = 125°C

= ±±0V

Dynamic Characteristics

T = 25°C unless otherwise speciﬁed

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

g_fs

= 50V, I = 7A

Forward Transconductance

Input Capacitance

C_iss

C_rss

C_oss

4765

= 0V, V = 25V

Reverse Transfer Capacitance

Output Capacitance

f = 1MHz

±50

C_o(cr)

1±5

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

= 0V, V = 0V to 800V

C_o(er)

Q_g

Q_gs

Q_gd

t_d(on)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

145

= 0 to 10V, I = 7A,

= 600V

Resistive Switching

V = 800V, I = 7A

t_r

t_d(off)

t_f

= 4.7Ω ⁶, V

= 15V

Source-Drain Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I_S

Pulsed Source Current

(Body Diode) ¹

I_SM

V_SD

t_rr

= 7A, T = 25°C, V

= 0V

Diode Forward Voltage

1.0

250

520

T = 25°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

T = 125°C

= 7A

T = 25°C

1.12

±.0±

Q_rr

µC

di_SD/dt = 100A/µs

= 100V

T = 125°C

T = 25°C

I_rrm

T = 125°C

1±.5

≤ 7A, di/dt ≤1000A/µs, V = 800V,

dv/dt

V/ns

T = 125°C

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

Starting at T_J= 25°C, L = 4±.59mH, R_G= 25Ω, I_AS= 7A.

Pulse test: Pulse Width < ±80µs, duty cycle < 2%.

C_o(cr)is deﬁned as a ﬁxed capacitance with the same stored charge as C_OSSwith V_DS= 67% of V_(BR)DSS.

C_o(er)is deﬁned as a ﬁxed capacitance with the same stored energy as C_OSSwith V_DS= 67% of V_(BR)DSS. To calculate C_o(er)for any value of

V_DSless than V_(BR)DSS,use this equation: C_o(er)= -2.17E-7/V_DS^2 + 2.6±E-8/V_DS+ ±.74E-11.

R_Gis external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

APT13F120B_S

±5

±0

= 10V

= 125°C

T_J= -55°C

_GS= 6, 7, 8 & 9V

T_J= 25°C

4.5V

±0

T_J= 125°C

T_J= 150°C

±0

, DRAIN-TO-SOURCE VOLTAGE (V)

DS(ON)

Figure 1, Output Characteristics

Figure 2, Output Characteristics

±.0

2.5

2.0

1.5

1.0

±0

NORMALIZED TO

= 10V 7A

V_DS> I_D(ON)

x R_DS(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

T_J= -55°C

T_J= 25°C

T_J= 125°C

0.5

-55 -25

25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

vs Junction Temperature

Figure 4, Transfer Characteristics

DS(ON)

6,000

1,000

C_iss

T_J= -55°C

T_J= 25°C

T_J= 125°C

100

C_oss

C_rss

800 1000 1200

200

V , DRAIN-TO-SOURCE VOLTAGE (V)

400

600

I , DRAIN CURRENT (A)

Figure 5, Gain vs Drain Current

Figure 6, Capacitance vs Drain-to-Source Voltage

= 7A

±5

±0

V_DS= 240V

V_DS= 600V

T_J= 25°C

T_J= 150°C

V_DS= 960V

20 40 60 80 100 120 140 160 180 200

0.2

V , SOURCE-TO-DRAIN VOLTAGE (V)

0.4

0.6

0.8

1.0

1.2

Q , TOTAL GATE CHARGE (nC)

Figure 7, Gate Charge vs Gate-to-Source Voltage

Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

APT13F120B_S

100

1±µs

ds(on)

100µs

1ms

1±µs

100µs

10ms

100ms

1ms

_J= 150°C

_C= 25°C

DC line

10ms

ds(on)

_J= 125°C

_C= 75°C

Scaling for Different Case & Junction

Temperatures:

100ms

DC line

_D= I_{D(T = 25°C)}*(T - T_C)/125

0.1

100

1200

, DRAIN-TO-SOURCE VOLTAGE (V)

100

1200

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 9, Forward Safe Operating Area

Figure 10, Maximum Forward Safe Operating Area

0.25

0.20

0.15

0.10

D = 0.9

0.7

Note:

0.5

0.±

= Pulse Duration

0.05

Duty Factor D =

SINGLE PULSE

0.1

Peak T = P

x Z

+ T

θJC C

0.05

10^-5

10^-4

10^-±

10^-2

10^-1

1.0

RECTANGULAR PULSE DURATION (seconds)

Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration

D PAK Package Outline

TO-247 (B) Package Outline

e± 100% Sn Plated

4.98 (.196)

4.69 (.185)

5.±1 (.209)

15.95 (.628)

16.05(.6±2)

1±.41 (.528)

1±.51(.5±2)

5.08 (.200)

15.49 (.610)

16.26 (.640)

1.04 (.041)

1.15(.045)

1.49 (.059)

2.49 (.098)

1.47 (.058)

1.57 (.062)

5.±8 (.212)

6.15 (.242) BSC

6.20 (.244)

Revised

8/29/97

11.51 (.45±)

11.61 (.457)

1±.79 (.54±)

1±.99(.551)

Revised

4/18/95

20.80 (.819)

21.46 (.845)

±.50 (.1±8)

±.81 (.150)

0.46 (.018)

0.56 (.022)

{± Plcs}

1.27 (.050)

1.40 (.055)

0.020 (.001)

0.178 (.007)

2.87 (.11±)

±.81 (.150)

4.50 (.177) Max.

±.12 (.12±)

1.98 (.078)

2.08 (.082)

4.06 (.160)

2.67 (.105)

2.84 (.112)

(Base of Lead)

1.65 (.065)

2.1± (.084)

1.22 (.048)

1.±2 (.052)

0.40 (.016)

0.79 (.0±1)

19.81 (.780)

20.±2 (.800)

Heat Sink (Drain)

and Leads

are Plated

5.45 (.215) BSC

{2 Plcs.}

1.01 (.040)

1.40 (.055)

Gate

Drain

Source

Drain

Gate

Dimensions in Millimeters (Inches)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,90± 5,089,4±4 5,182,2±4 5,019,522 5,262,±±6 6,50±,786

APT13F120B_09 [MICROSEMI]

相关型号：

APT13F120S

APT13GP120B

APT13GP120BD1

APT13GP120BDF1

APT13GP120BDF1

APT13GP120BDQ1

APT13GP120BDQ1G

APT13GP120BDQ1G

APT13GP120BG

APT13GP120BSC

APT13GP120K

APT13GP120KG