APT30M61BLLG [MICROSEMI]
Power Field-Effect Transistor, 54A I(D), 300V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN;
| 型号： | APT30M61BLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 54A I(D), 300V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT30M61BLL
APT30M61SLL
300V 54A 0.061Ω
R
POWER MOS 7 MOSFET
D3PAK
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M61BLL-SLL
UNIT
VDSS
ID
Drain-Source Voltage
300
54
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
216
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
403
PD
3.23
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
54
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
30
4
1300
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
2
Drain-Source On-State Resistance
(VGS = 10V, 27A)
0.061
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT30M61BLL-SLL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
3720
920
41
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
64
GS
V
= 150V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
23
nC
ns
I
= 54A @ 25°C
D
26
RESISTIVESWITCHING
12
V
= 15V
GS
20
V
= 150V
DD
I
= 54A @ 25°C
td(off)
36
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
13
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
367
319
451
348
V
= 200V, V = 15V
GS
DD
I
= 54A, R = 5Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
µJ
6
Turn-on Switching Energy
V
= 200V, V = 15V
GS
DD
I
= 54A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
IS
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
54
216
1.3
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -54A)
Volts
ns
Reverse Recovery Time (IS = -54A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -54A, dlS/dt = 100A/µs)
440
5.8
Q rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
5
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.31
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 0.89mH, R = 25Ω, Peak I = 54A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -54A
/
≤ 700A/µs
V
R ≤ 300V T ≤ 150°C
dt
S
J
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
t
1
0.3
0.10
t
2
t
1
0.05
Duty Factor D =
Peak T = P x Z
/
t
SINGLEPULSE
0.1
2
+ T
J
DM θJC
C
0.05
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT30M61BLL-SLL
180
160
140
120
100
80
15V
10V
RC MODEL
0.119
9V
Junction
temp. (°C)
0.0135F
0.319F
8V
Power
(watts)
60
0.191
40
7V
Case temperature. (°C)
20
6V
30
0
0
V
5
10
15
20
25
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
1.40
160
NORMALIZED TO
V
> I (ON) x
R
(ON)MAX.
DS
DS
D
V
= 10V @ 27A
250µSEC. PULSE TEST
GS
140
120
100
80
@ <0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
V
=10V
GS
T
= -55°C
J
60
T
= +25°C
J
40
V
=20V
80
GS
T
= +125°C
0.90
0.80
J
20
0
0
V
2
4
6
8
10
0
20
40
60
100
120
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.20
1.15
1.10
1.05
1.00
0.95
0.90
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 27A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
Typical Performance Curves
APT30M61BLL-SLL
10,000
5,000
216
OPERATIONHERE
C
iss
LIMITEDBYR (ON)
100
DS
100µS
1,000
C
oss
10
1mS
100
10
C
rss
10mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
5
1
1
10
50 100
300
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
16
14
12
10
I
= 54
D
100
50
V
= 60V
DS
T =+150°C
J
T =+25°C
J
V
= 150V
DS
V
= 240V
DS
8
6
4
2
0
10
5
1
0.3
V
0
10 20 30 40 50 60 70 80 90 100
Q ,TOTALGATECHARGE(nC)
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
50
90
V
= 200V
DD
= 5Ω
R
T
80
70
60
50
40
30
20
10
0
t
G
d(off)
= 125°C
J
t
f
40
L = 100µH
V
= 200V
DD
= 5Ω
R
T
30
20
10
0
G
= 125°C
J
L = 100µH
t
d(on)
t
r
10
20 30
40
50
(A)
60
70
80
90
10 20
30
40 50
(A)
60
70
80
90
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
900
800
700
600
500
400
300
200
100
0
1200
1000
800
V
= 200V
V
I
= 200V
DD
DD
= 54A
R
= 5Ω
G
D
E
off
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
600
E
on
E
on
400
E
off
200
0
10 20 30
40
50 60
(A)
70 80 90
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT30M61BLL-SLL
Gate Voltage
10 %
90%
d(off)
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(on)
t
t
r
Drain Current
Drain Voltage
90%
Drain Voltage
Drain Current
90 %
t
f
5 %
5 %
10%
0
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DS30
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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